CN105529237B - Gas flow guiding ring, gas supply device and plasma processing apparatus - Google Patents
Gas flow guiding ring, gas supply device and plasma processing apparatus Download PDFInfo
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- CN105529237B CN105529237B CN201410571555.1A CN201410571555A CN105529237B CN 105529237 B CN105529237 B CN 105529237B CN 201410571555 A CN201410571555 A CN 201410571555A CN 105529237 B CN105529237 B CN 105529237B
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Abstract
The invention discloses a kind of gas flow guiding ring, for inputting multi-channel reaction gas to plasma reaction chamber.Gas flow guiding ring includes annular body, is embedded at a plurality of annular gas passageway in annular body, corresponding with multi-channel reaction gas, and connected and multigroup fumarole non-interference each other corresponding with a plurality of annular gas passageway.The air inlet of each fumarole of every group of fumarole is connected with the output terminal of corresponding annular gas passageway, and gas outlet is formed on the madial wall of annular body.Wherein, the gas emission direction of at least two groups of fumarole is arranged to different.The present invention is capable of the gas field distribution of reacting gas, so as to improve the uniformity of corona treatment.
Description
Technical field
The present invention relates to semiconductor processing equipment, more particularly to a kind of gas flow guiding ring and the gas with the gas flow guiding ring
Body feeding mechanism and plasma processing apparatus.
Background technology
In recent years, it is higher and higher to the integrated level and performance requirement of element with the development of semiconductor fabrication process, wait from
Daughter technology (Plasma Technology) is widely used in many by making reacting gas excite the plasma to be formed
Semiconductor technology, in depositing operation (such as chemical vapor deposition), etching technics (such as dry etching), it leads in semiconductor manufacturing
Very important effect is just being played in domain.Usually, in plasma processing apparatus, plasma is usually by positioned at anti-
Answer the reacting gas that chamber roof is discharged to be formed by radio-frequency drive, plasma is then made by the bias voltage of electrostatic chuck
Chip of the bombardment on chuck, so as to fulfill techniques such as the etching to chip, depositions.
Fig. 1 shows a kind of structure diagram of plasma processing apparatus.Plasma processing apparatus includes reaction cavity 2
With the insulation cover plate 1 above reaction cavity 2, gas supply device 5 be horizontally placed on insulation cover plate 1 and reaction cavity 4 it
Between, the connection of gas supply device 5 is located at the reacting gas source 4 outside reaction cavity 2, for by the reaction in reacting gas source 4
In gas input reaction cavity 2.The electrostatic chuck 6 for placing pending semiconductor wafer, electrostatic chuck are equipped with the reaction cavity 2
Disk 6 connects RF bias power source 9.The top of insulation cover plate 1 is provided with the inductance coil 3 of connection radio frequency power source 8, radio-frequency power
Source 8 produce induced field can go out rf electric field by axial induction on inductance coil 3, the electric field to the electronics in reaction cavity into
Row excitation, makes their gas molecule collisions with reacting gas produce the plasma of reacting gas, the plasma is with partly leading
Body chip reacts, the plasma process such as to perform etching or deposit.Reaction cavity 2 and external exhaust apparatus 7 (such as vacuum
Pump) be connected, in processing procedure by used reacting gas and bi-product gas extraction cavity 2.
Fig. 2 a and Fig. 2 b show a kind of gas flow guiding ring of the prior art.As shown in Figure 2 a, gas flow guiding ring has ring
Shape main body 10, gas passage 11 and multiple fumaroles 12.The entrance of gas passage 11 is connected with reacting gas source 4, fumarole
12 air inlet and the outlet of gas passage 11, gas outlet are arranged on the madial wall of annular body 10.Reacting gas passes through
Gas passage 11 is delivered to each fumarole 12 from reacting gas source 4, so as to be injected into plasma reaction chamber 2.It refer to
Fig. 2 a and Fig. 2 b, on the horizontal plane of annular body 10, fumarole 12 is centrally disposed for horizontally toward annular body 10, therefore
Reacting gas is directly toward the central area discharge of annular body 10.
However, due to being subject to the introducing of 2 reaction gases of reaction cavity or plasma influence pockety, often
Make the different zones on semiconductor wafer surface that there is different processing speeds；For along the radially-arranged different zones of chip,
Such as central area and fringe region, this uneven processing is especially apparent, and then causes what different zones on chip were formed partly to lead
The performance of body device is different, all has a significant impact to the technology controlling and process and product yield of semiconductor devices manufacture.
It is therefore desirable to be able to the device that is adjusted of plasma uniformity is to improve drawbacks described above.
The content of the invention
The defects of it is a primary object of the present invention to overcome the prior art, there is provided one kind helps to make reacting gas fully solve
From improving the gas supply device of plasma density.
To reach above-mentioned purpose, the present invention provides a kind of gas flow guiding ring, is arranged at the reaction of plasma processing apparatus
The inner upper of cavity, sets a gas diverter, the gas flow guiding ring between the gas flow guiding ring and gas supply source
For inputting the multi-channel reaction gas that flow proportional adjusting is shunted and carried out through the gas diverter to the reaction cavity
It is interior.The gas flow guiding ring includes：Annular body；It is embedded in the annular body, is corresponding with the multi-channel reaction gas
A plurality of annular gas passageway, the input terminal of a plurality of annular gas passageway are connected with the gas diverter；And with it is described
A plurality of annular gas passageway corresponds to be connected and multigroup fumarole non-interference each other, each fumarole of each group of fumarole
Air inlet is connected with the output terminal of corresponding annular gas passageway, and gas outlet is formed on the madial wall of the annular body, its
In, the gas emission direction of at least two groups of the fumarole is arranged to different.
Preferably, the gas outlet of the fumarole of different groups is formed at the different height of the madial wall of the annular body
Place.
Preferably, multigroup fumarole includes at least first group and second group, wherein described first group of fumarole
Gas emission direction is parallel with the horizontal plane of the annular body, the gas emission direction of described second group of fumarole with it is described
The horizontal plane of annular body is in an acute angle.
Preferably, the gas emission direction of described second group of fumarole is tilted relative to the horizontal plane of the annular body
Upwards or diagonally downward.
Preferably, each fumarole at least has the air outlet section connected with its gas outlet, at least two groups of the spray
The axial line of the air outlet section of stomata is different from the angle that the annular body plane is formed.
Preferably, a plurality of annular gas passageway is radially to be embedded in the annular body or more lower stack
Mode is embedded in the annular body.
Preferably, each gas passage is circular gas passage, and fumarole described in each group is along its corresponding institute
State the even circumferential distribution of circular gas passage.
Preferably, the cross section of the fumarole is the small taper in the big gas outlet of air inlet.
Preferably, for the one group of fumarole connected corresponding to each annular gas passageway, close to the annular gas
The aperture of fumarole at path input is less than the aperture of the fumarole away from the input terminal.
According to another aspect of the present invention, present invention also offers a kind of gas confession applied to plasma processing apparatus
Device is answered, it includes gas diverter and above-mentioned gas guide ring, and the wherein gas diverter is arranged at the plasma
Outside the reaction cavity for managing device, it is connected with reacting gas source, for reacting gas to be split into multichannel and to the multichannel
The flow proportional of reacting gas be adjusted.
According to another aspect of the present invention, present invention also offers one kind to include reaction cavity and above-mentioned gas supply dress
The plasma processing apparatus put.
The beneficial effects of the present invention are the setting by gas passage and fumarole in gas flow guiding ring, adjusts plasma
The plasma distribution density of different zones in body processing unit reaction cavity, improves partly leading of being formed of different zones on chip
The homogeneity of body device.
Brief description of the drawings
Fig. 1 is the structure diagram of plasma processing apparatus in the prior art；
Fig. 2 a are the top view of gas supply device in the prior art；
Fig. 2 b are the sectional view of gas supply device in the prior art；
Fig. 3 is the structure diagram of plasma processing apparatus of the embodiment of the present invention；
Fig. 4 is the sectional view of one embodiment of the invention gas flow guiding ring.
Embodiment
To make present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is made into one
Walk explanation.Certainly the invention is not limited to the specific embodiment, the general replacement known to those skilled in the art
Cover within the scope of the present invention.
Fig. 3 shows that the plasma treatment using gas flow guiding ring of the present invention that one embodiment of the present invention provides fills
Put.It should be understood that what plasma processing apparatus was merely exemplary, it can include less or more constituent element, or
The arrangement of the constituent element may be different from shown in Fig. 4.
Plasma processing apparatus includes reaction cavity 12 and the insulation cover plate 11 above reaction cavity 12.Insulating cover
Plate 11 is usually ceramic dielectric material.Inner upper, 11 lower horizontal of insulation cover plate of reaction cavity 12 are provided with a gas and lead
Flow ring 20.Gas flow guiding ring 20 is connected with the gas diverter 19 outside reaction cavity 12, both collectively form plasma
The gas supply device of body processing unit.Gas diverter 10 is connected with reacting gas source 18, for by the institute of reacting gas source 18
The reacting gas of supply splits into multichannel, and adjusts the gas flow of these flow paths, and gas flow guiding ring then will be through gas distribution
Device 19 shunts and the multi-channel reaction gas of flow-rate adjustment is input in reaction cavity 12.The top of insulation cover plate 11 is provided with connection and penetrates
The inductance coil 13 of frequency power source 14, the induced field that radio frequency power source 14 produces can induce radio frequency electrical on inductance coil 13
, which accelerates the electronics in reaction cavity 12, makes they and the gas molecule collision of the reacting gas inputted, this
A little collisions cause the ionization of reacting gas and the excitation of plasma, so as to produce plasma, plasma in cavity 12
Body and pending substrate, as semiconductor wafer reacts, the plasma process such as to perform etching or deposit.Inside reaction cavity 12
Lower section is equipped with the electrostatic chuck 15 for placing pending semiconductor wafer, and electrostatic chuck 15 connects RF bias power source 16, so as to
Increase plasma and the energy of semiconductor wafer collision.Reaction cavity 12 and external exhaust apparatus 17 (such as vacuum pump) phase
Connection, in processing procedure by used reacting gas and bi-product gas extraction cavity 12.
Please continue to refer to Fig. 4 which shows the sectional view of the gas flow guiding ring of one embodiment of the invention.Gas flow guiding ring 20
Including annular body 21, a plurality of cricoid gas passage corresponding with multi-channel reaction gas is embedded with annular body 21, these
The input terminal of gas passage is connected by pipeline with gas diverter 19 respectively.In the present embodiment, gas diverter 19 will come from
The reacting gas of reacting gas source 18 splits into two-way, and adjusts this two-way reacting gas and have different gas flow ratios,
As wherein all the way with 90% gas flow and another way with 10% gas flow.Gas diverter 19 can pass through flow
Regulating valve is provided with above-mentioned function.Correspondingly, 2 annular gas passageways, these rings are radially embedded in annular body 21
The input terminal of shape gas passage perpendicular to 21 place plane of annular body and respectively with through the shunting of gas diverter 19 and flow tune
The pipeline of the two-way gas of section is connected.In other embodiments, a plurality of annular gas passageway can also be the side with stacked on top
Formula is embedded in annular body 21, at this time the input terminal of annular gas passageway can parallel to 21 place plane of annular body and with it is more
Road gas line is connected.It is additionally provided with multigroup fumarole non-interference each other in annular body 21, each group of fumarole and one
Gas passage, which corresponds to, to be connected.In the present embodiment, there are two groups of fumaroles 23,25, correspond respectively to annular gas passageway 22,24.
Each fumarole of each group of fumarole is respectively provided with air inlet and gas outlet, the output of air inlet and corresponding annular gas passageway
End is connected, and gas outlet is then formed on the madial wall of annular body 21.It should be noted that these fumarole groups in the present invention,
The gas emission direction that will have at least two groups of fumaroles is arranged to different.Thus, the reacting gas warp that reacting gas source 18 is supplied
Gas diverter 19 divides for after two-way and adjusting gas flow ratio, respectively through pipeline transmission to annular gas passageway 22 and 24,
Two groups of fumaroles 23,25 are delivered to again, so that the reacting gas of different flow is injected into reaction cavity with different spray angles
In 12, and the different zones of reaction cavity 12 are enabled to obtain different gas field distributions and plasma density, so as to adjust
Plasma distribution in semiconductor wafer radial position.In the present embodiment, annular gas passageway 22,24 is circular and ring
Around 360 degree of the madial wall of annular body 21, annular gas passageway can also be polygonal ring shape in other embodiments.Ring-type gas
The cross sectional shape of body passage for rectangle but it is also possible to be circle, the present invention is not limited thereto.The quantity of each group of fumarole can be
8~300, it can be distributed along the even circumferential of its corresponding circular gas passage, to ensure the uniform of gas flowfield distribution
Property.The section shape of each fumarole can be the small taper in the big gas outlet of air inlet, to increase the ejection flow velocity of reacting gas.
Prior art plasma is improved by the setting of a plurality of annular gas passageway and multigroup fumarole in the present invention
The defects of Density Distribution is uneven.As shown in figure 4, to avoid the gas outlet of fumarole from interfering, the fumarole of difference group goes out
Gas port is formed at the different height of the madial wall of annular body 21.In the present embodiment, fumarole group 23 is located at fumarole group 25
Top, annular channel 22 are located at the radially inner side of annular channel 24.Wherein, the gas emission direction of fumarole group 25 and annular master
The horizontal plane of body 21 is parallel, by the horizontal injection of reacting gas in annular channel 24, the gas emission direction of fumarole group 23
It is in an acute angle with the horizontal plane of annular body 21, the reacting gas in annular channel 22 is tilted and is projected.As shown in the figure, jet
The gas emission direction of hole group 23 is tilted down relative to the horizontal plane of annular body 21, its axial line and the water of annular body 21
Planar shaped α at an acute angle.Therefore from the reacting gas that fumarole 23 sprays with horizontally toward gas flow guiding ring center and vertically
Downward initial velocity, and the reacting gas sprayed from fumarole 25 only has the initial speed at horizontally toward gas flow guiding ring center
Degree, in conjunction with control of the gas diverter 19 to gas flow ratio, you can introduced to radial direction different zones in cavity 12
The flow of reacting gas and direction are adjusted, so as to improve the uniformity of semiconductor wafer surface corona treatment.Fig. 4 institutes
Show only one embodiment of the invention, in practical applications, the direction of each group of fumarole can be arranged as required to, such as jet
The gas emission direction of hole group 23 can also be tilted upward relative to the horizontal plane of annular body 21, and thus fumarole group 23 sprays
Gas has upward initial velocity, it declines again after rising in vertical direction, when also increasing the dissociation of reacting gas
Between.In addition, fumarole group 25 can be also obliquely installed and be horizontally disposed with fumarole group 23, as long as each group of fumarole is set
Not interfered with other group of fumarole or other annular channels.
Further, each fumarole can be made of two sections or multistage.Each fumarole at least has to go out with it
The air outlet section of gas port connection, the axial line of air outlet section can be parallel with 21 plane of annular body or forms acute angle, and determines gas
Body emission direction.The axial line of the air outlet section of at least two groups of fumarole is different from the angle that annular body plane is formed.Spray
Other parts of the stomata in addition to air outlet section, do not interfere with gas and spray angle, can have the direction different from air outlet section, this
Design can avoid interfering between fumarole group, between fumarole group and annular channel.
As it was previously stated, multi-channel reaction gas is to be delivered to fumarole 23,25 by each bar gas passage 22,24, and for
For every group of fumarole, air inlet (output terminal that is to say its corresponding annular gas passageway) and the ring of its each fumarole
Path length between the input terminal of shape gas passage is different.Due to the difference of this path length, can cause from same
The gas pressure and gas mass flow discrepancy that each fumarole of group sprays are even.Therefore, in the preferred embodiment of the present invention, lean on
It is (such as defeated with this that the aperture of the fumarole of nearly corresponding annular gas passageway input end is less than the fumarole away from the input end
Enter the fumarole that is away from each other of end) aperture.Thus, close to the less corresponding fumarole meeting in aperture of annular gas passageway input terminal
Reacting gas is set to slow down by speed, and the correspondence fumarole larger away from the aperture of annular gas passageway input terminal is then conducive to
Improve gas by efficiency so that reach be delivered to from every group of each fumarole reaction cavity 12 gas flow it is uniform
Purpose.
In conclusion the gas flow guiding ring of the present invention, by being configured to annular gas passageway and fumarole, adjustment is anti-
The gas field of gas different zones in plasma processing apparatus is answered to be distributed, so that the plasma that reacting gas produces exists
It can be uniformly distributed radially from center to marginal position on chip, improve the uniformity to the processing of chip diverse location, improved
The yield of product.
It is understood that gas flow guiding ring and gas supply device in the present invention, can be applied to various plasmas
In processing unit, such as plasma etching, plasma physical vapor deposition, plasma chemical vapor deposition, plasma
The devices such as surface clean.
Although the present invention is disclosed as above with preferred embodiment, right many embodiments are illustrated only for the purposes of explanation
, the present invention is not limited to, those skilled in the art can make without departing from the spirit and scope of the present invention
Some changes and retouches, and the protection domain that the present invention is advocated should be subject to described in claims.
Claims (9)
1. a kind of gas flow guiding ring, is arranged at the inner upper of the reaction cavity of plasma processing apparatus, the gas flow guiding
One gas diverter is set between ring and gas supply source, the gas flow guiding ring be used to shunt through the gas diverter and
The multi-channel reaction gas for carrying out flow proportional adjusting is inputted to the reaction cavity, it is characterised in that the gas flow guiding ring
Including：
Annular body；
It is embedded in the annular body, a plurality of annular gas passageway corresponding with the multi-channel reaction gas, a plurality of ring
The input terminal of shape gas passage is connected with the gas diverter；And
It is corresponding with a plurality of annular gas passageway to be connected and multigroup fumarole non-interference each other, each group of fumarole it is each
The air inlet of fumarole is connected with the output terminal of corresponding annular gas passageway, and gas outlet is formed at the inner side of the annular body
On wall,
Wherein, multigroup fumarole includes at least first group and second group, wherein the gas spray of described first group of fumarole
Outgoing direction is parallel with the horizontal plane of the annular body, and the gas emission direction of described second group of fumarole is relative to the ring
The horizontal plane of shape main body is diagonally downward.
2. gas flow guiding ring according to claim 1, it is characterised in that the gas outlet of the fumarole of difference group is formed
At the different height of the madial wall of the annular body.
3. gas flow guiding ring according to claim 1, it is characterised in that each fumarole at least has and its outlet
The air outlet section of mouth connection, at least axial line of the air outlet section of two groups of the fumarole are formed with the annular body plane
Angle is different.
4. gas flow guiding ring according to claim 1, it is characterised in that a plurality of annular gas passageway is radially embedding
The lower mode stacked is embedded in the annular body in the annular body or more.
5. gas flow guiding ring according to claim 1, it is characterised in that each gas passage is that circular gas leads to
Road, fumarole described in each group are distributed along the even circumferential of its corresponding circular gas passage.
6. gas flow guiding ring according to claim 1, it is characterised in that the cross section of the fumarole goes out greatly for air inlet
The small taper of gas port.
7. gas flow guiding ring according to claim 1, it is characterised in that for corresponding to each annular gas passageway
One group of fumarole of connection, is less than the spray away from the input terminal close to the aperture of the fumarole of the annular gas passageway input end
The aperture of stomata.
A kind of 8. gas supply device, applied to plasma processing apparatus, it is characterised in that including：
Gas diverter, is arranged at outside the reaction cavity of the plasma processing apparatus, it is connected with reacting gas source, uses
In reacting gas being split into multichannel and flow proportional to the reacting gas of the multichannel is adjusted；And
Such as claim 1~7 any one of them gas flow guiding ring.
9. a kind of plasma processing apparatus, including reaction cavity and gas supply device, the gas supply device include：
The gas diverter being arranged at outside the reaction cavity, it is connected with reacting gas source, for reacting gas to be shunted
It is adjusted for multichannel and to the gas flow ratio of the multichannel；And
Such as claim 1~7 any one of them gas flow guiding ring.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410571555.1A CN105529237B (en) | 2014-10-23 | 2014-10-23 | Gas flow guiding ring, gas supply device and plasma processing apparatus |
| TW103145590A TWI581303B (en) | 2014-10-23 | 2014-12-25 | Gas guide ring, gas supply device and induction coupling plasma processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410571555.1A CN105529237B (en) | 2014-10-23 | 2014-10-23 | Gas flow guiding ring, gas supply device and plasma processing apparatus |
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| Publication Number | Publication Date |
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| CN105529237A CN105529237A (en) | 2016-04-27 |
| CN105529237B true CN105529237B (en) | 2018-05-01 |
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| CN201410571555.1A Active CN105529237B (en) | 2014-10-23 | 2014-10-23 | Gas flow guiding ring, gas supply device and plasma processing apparatus |
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| Country | Link |
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| CN (1) | CN105529237B (en) |
| TW (1) | TWI581303B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108022821B (en) * | 2016-10-28 | 2020-07-03 | 中微半导体设备(上海)股份有限公司 | Plasma processing device and corrosion-resistant protection method for gas channel |
| CN108419355B (en) * | 2018-03-21 | 2022-02-18 | 台州学院 | Equipment and method for generating sheath-free plasma |
| CN112071735B (en) * | 2019-06-10 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | Gas regulating device and plasma etching equipment using same |
| CN112071733B (en) * | 2019-06-10 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | Liner device for vacuum treatment equipment and vacuum treatment equipment |
| CN114068272B (en) * | 2020-07-31 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | Gas flow regulating device and regulating method and plasma processing device |
| CN114318301A (en) * | 2021-12-31 | 2022-04-12 | 拓荆科技股份有限公司 | Gas ring and semiconductor reaction cavity |
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| JP2001274151A (en) * | 2000-03-24 | 2001-10-05 | Tokyo Electron Ltd | Plasma processing apparatus and method, and gas supply ring and dielectric |
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| US20070119370A1 (en) * | 2005-11-04 | 2007-05-31 | Paul Ma | Apparatus and process for plasma-enhanced atomic layer deposition |
| US7691755B2 (en) * | 2007-05-15 | 2010-04-06 | Applied Materials, Inc. | Plasma immersion ion implantation with highly uniform chamber seasoning process for a toroidal source reactor |
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| US8110068B2 (en) * | 2008-03-20 | 2012-02-07 | Novellus Systems, Inc. | Gas flow distribution receptacles, plasma generator systems, and methods for performing plasma stripping processes |
| CN104103484B (en) * | 2013-04-15 | 2017-07-25 | 中微半导体设备(上海)有限公司 | Gas supply device and plasma processing apparatus |
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- 2014-12-25 TW TW103145590A patent/TWI581303B/en active
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| JP2001274151A (en) * | 2000-03-24 | 2001-10-05 | Tokyo Electron Ltd | Plasma processing apparatus and method, and gas supply ring and dielectric |
| EP1398820A2 (en) * | 2002-08-09 | 2004-03-17 | Mitsubishi Heavy Industries, Ltd. | Plasma treatment apparatus |
| CN101174097A (en) * | 2006-10-30 | 2008-05-07 | 应用材料股份有限公司 | Mask etch plasma reactor with variable process gas distribution |
| TW201437422A (en) * | 2013-03-12 | 2014-10-01 | Applied Materials Inc | Multi-zone gas injection assembly with azimuthal and radial distribution control |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201616546A (en) | 2016-05-01 |
| CN105529237A (en) | 2016-04-27 |
| TWI581303B (en) | 2017-05-01 |
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Address after: 201201 Shanghai City Jingqiao export processing zone of Pudong New Area (South) Taihua Road No. 188 Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 Shanghai City Jingqiao export processing zone of Pudong New Area (South) Taihua Road No. 188 Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |