US20070119370A1 - Apparatus and process for plasma-enhanced atomic layer deposition - Google Patents

Apparatus and process for plasma-enhanced atomic layer deposition Download PDF

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Publication number
US20070119370A1
US20070119370A1 US11/556,745 US55674506A US2007119370A1 US 20070119370 A1 US20070119370 A1 US 20070119370A1 US 55674506 A US55674506 A US 55674506A US 2007119370 A1 US2007119370 A1 US 2007119370A1
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United States
Prior art keywords
gas
chamber
plasma
region
ruthenium
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/556,745
Inventor
Paul Ma
Kavita Shah
Dien-Yeh Wu
Seshadri Ganguli
Christophe Marcadal
Frederick Wu
Schubert Chu
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Applied Materials Inc
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Applied Materials Inc
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Publication date
Priority to US73386905P priority Critical
Priority to US73365505P priority
Priority to US73365405P priority
Priority to US73357405P priority
Priority to US73387005P priority
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to US11/556,745 priority patent/US20070119370A1/en
Assigned to APPLIED MATERIALS, INC. reassignment APPLIED MATERIALS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MARCADAL, CHRISTOPHE, CHU, SCHUBERT S, GANGULI, SESHADRI, SHAH, KAVITA, WU, DIEN-YEH, MA, PAUL, WU, FREDERICK C
Publication of US20070119370A1 publication Critical patent/US20070119370A1/en
Abandoned legal-status Critical Current

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