JP2001267248A - Semiconductor processor - Google Patents
Semiconductor processorInfo
- Publication number
- JP2001267248A JP2001267248A JP2000072243A JP2000072243A JP2001267248A JP 2001267248 A JP2001267248 A JP 2001267248A JP 2000072243 A JP2000072243 A JP 2000072243A JP 2000072243 A JP2000072243 A JP 2000072243A JP 2001267248 A JP2001267248 A JP 2001267248A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- reaction vessel
- wafer
- semiconductor processing
- processing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体処理装置に関
し、特に被処理物上にガスを均一に導入するために反応
容器に改良を施した半導体処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor processing apparatus, and more particularly, to a semiconductor processing apparatus in which a reaction vessel is improved so as to uniformly introduce a gas onto an object.
【０００２】[0002]
【従来の技術】従来、半導体処理装置例えばＣＶＤ（Ｃ
ｈｅｍｉｃａｌ Ｖａｐｏｕｒ Ｄｅｐｏｓｉｔｉｏ
ｎ）装置としては、図４に示す構成のものが知られてい
る。2. Description of the Related Art Conventionally, a semiconductor processing apparatus such as a CVD (C
chemical Vapor Deposition
n) As an apparatus, an apparatus having a configuration shown in FIG. 4 is known.
【０００３】図中の付番１は、反応容器を示す。この反
応容器１内には、ウエハ２を支持するホルダー３が配置
されている。このホルダー３の内部には、ウエハ２を加
熱するヒーター４が配置されている。ここで、ヒーター
４は電源５によって加熱される。前記反応容器１の上部
には、反応容器１内に複数の反応性ガスを導入するため
のガス導入管６ａ，６ｂ，６ｃが夫々設けられている。
ここで、ガス導入管６ａ，６ｂからはＮ２ガスが反応容
器１内のウエハ２上部に導入され、ガス導入管６ｃから
はＮ２ガスと材料ガスの混合ガスが反応容器１内のウエ
ハ２上部に導入されるようになっている。また、前記反
応容器１の底部には、バルブ７を介装した排気管８が設
けられている。[0003] Reference numeral 1 in the figure denotes a reaction vessel. In this reaction vessel 1, a holder 3 for supporting a wafer 2 is arranged. Inside the holder 3, a heater 4 for heating the wafer 2 is arranged. Here, the heater 4 is heated by the power supply 5. Gas introduction pipes 6a, 6b, 6c for introducing a plurality of reactive gases into the reaction vessel 1 are provided at the upper part of the reaction vessel 1, respectively.
Here, the N 2 gas is introduced into the upper portion of the wafer 2 in the reaction vessel 1 from the gas introduction pipes 6a and 6b, and the mixed gas of the N 2 gas and the material gas is supplied from the gas introduction pipe 6c to the wafer 2 in the reaction vessel 1. It is to be introduced at the top. At the bottom of the reaction vessel 1, an exhaust pipe 8 with a valve 7 interposed is provided.
【０００４】ところで、こうした従来のＣＶＤ装置にお
いて、ウエハ２に膜を形成する際は、複数のガス導入管
６ａ，６ｂ，６ｃから総てガスをまとめて反応容器１内
に導入するため、材料ガスがＮ２ガス等の不活性ガスや
反応容器内壁からのガスの跳ね返り等による影響を受け
てウエハ上に均一に供給されず、ウエハ２に形成される
膜厚が不均一になるという問題があった。また、反応容
器１の内壁全面に材料ガスに起因して膜が付着するとい
う問題があった。更に、材料ガスを一度に反応容器１内
に一度に導入するため、材料ガスを多く消費するという
問題があった。In such a conventional CVD apparatus, when a film is formed on the wafer 2, since all gases are collectively introduced from the plurality of gas introduction pipes 6 a, 6 b and 6 c into the reaction vessel 1, a material gas is used. Is not uniformly supplied on the wafer due to the influence of an inert gas such as N2 gas or the rebound of the gas from the inner wall of the reaction vessel, so that the film thickness formed on the wafer 2 becomes non-uniform. . Further, there is a problem that a film adheres to the entire inner wall of the reaction vessel 1 due to the material gas. Furthermore, since the material gas is introduced into the reaction vessel 1 at a time, there is a problem that a large amount of the material gas is consumed.
【０００５】[0005]
【発明が解決しようとする課題】本発明は上記事情を考
慮してなされたもので、反応容器内に、被処理物に供給
する材料ガス又は反応性ガスと被処理物の周囲に供給す
る不活性ガスとを独立に制御するガス制御手段を設けた
構成にすることにより、被処理物上に材料ガス又は反応
性ガスを均一に導入し、もって均一な膜をウエハ上に形
成しえるとともに、膜付着量の低減、材料ガスの消費量
の低減をなしえる半導体処理装置を提供することを目的
とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and it is difficult to supply a material gas or a reactive gas to be supplied to a processing object and a reaction gas supplied around the processing object in a reaction vessel. By providing a gas control means for independently controlling the active gas, a material gas or a reactive gas is uniformly introduced onto the object to be processed, so that a uniform film can be formed on the wafer. An object of the present invention is to provide a semiconductor processing apparatus capable of reducing the amount of film deposition and the amount of material gas consumed.
【０００６】[0006]
【課題を解決するための手段】本発明は、反応容器と、
この反応容器内に配置され、被処理物を支持する支持部
材と、前記反応容器内にガスを導入する複数のガス導入
口と、前記反応容器内を排気する排気手段とを具備し、
前記反応容器内に、被処理物に供給する材料ガス又は反
応性ガスと被処理物の周囲に供給する不活性ガスとを独
立に制御するガス制御手段を設けたことを特徴とする半
導体処理装置である。The present invention comprises a reaction vessel,
A support member arranged in the reaction vessel, for supporting the object to be processed, a plurality of gas inlets for introducing a gas into the reaction vessel, and an exhaust unit for exhausting the inside of the reaction vessel,
A semiconductor processing apparatus provided with gas control means for independently controlling a material gas or a reactive gas to be supplied to the object to be processed and an inert gas to be supplied around the object to be processed in the reaction vessel; It is.
【０００７】[0007]
【発明の実施の形態】以下、本発明について詳細に説明
する。本発明は、ガス制御手段によりウエハ上部には材
料ガス又は反応性ガスのみを集中的に送り、処理に寄与
しない部分には材料ガスを供給することなく不活性ガス
のみを供給するようにして、不活性ガスや反応容器の内
壁からのガスの跳ね返り等による影響をできるだけ少な
くするとともに、反応容器内壁への膜付着の低減、材料
ガスの消費量の低減をしようとしたことを特徴とする。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail. According to the present invention, the gas control means intensively sends only the material gas or the reactive gas to the upper portion of the wafer, and supplies only the inert gas without supplying the material gas to the portion not contributing to the processing. The present invention is characterized in that the influence of inert gas or gas rebound from the inner wall of the reaction vessel is reduced as much as possible, the film adhesion to the inner wall of the reaction vessel is reduced, and the consumption of material gas is reduced.
【０００８】本発明において、前記ガス導入口は反応容
器の縦方向に沿って上下に少なくとも２箇所配置され、
かつ前記ガス制御手段としては上部につば部を有する筒
状体であり、しかも筒状体のつば部が上下のガス導入口
間に位置する構成のものが挙げられる。また、別なガス
制御手段としては、断面形状が逆八の字状の仕切板であ
り、仕切板の上端が上下のガス導入口間に位置する構成
のものが挙げられるが、これらに限定されない。また、
前記ガス制御手段は、反応容器に固定する構成のもので
もよいが、反応容器から取り外しできる構成のものが好
ましい。この理由は、反応容器からガス制御手段を外部
に取出して、反応時ガス制御手段に付着した膜を除去で
きるからである。[0008] In the present invention, the gas inlet is disposed at least two locations vertically along the longitudinal direction of the reaction vessel,
The gas control means may be a cylindrical body having a flange at the top, and the gas control means may have a configuration in which the flange of the cylindrical body is located between the upper and lower gas inlets. Further, as another gas control means, there is a partition plate having a configuration in which a cross-sectional shape is an inverted-octagonal shape and the upper end of the partition plate is located between upper and lower gas inlets, but is not limited thereto. . Also,
The gas control means may be configured to be fixed to the reaction vessel, but is preferably configured to be removable from the reaction vessel. This is because the gas control means can be taken out of the reaction vessel to remove the film attached to the gas control means during the reaction.
【０００９】本発明において、前記筒状体の開口部には
多数の穴が開けられた整流板を設けることが好ましい。
ここで、整流板としては、多数の穴が格子状に形成され
た構成のものが好ましい。なお、整流板に形成される穴
の径や形状は、特に限定されず、ウエハへのガスの流れ
に応じて適宜設定すればよい。In the present invention, it is preferable that a straightening plate having a large number of holes is provided at the opening of the cylindrical body.
Here, it is preferable that the current plate has a configuration in which many holes are formed in a lattice shape. The diameter and shape of the hole formed in the current plate are not particularly limited, and may be appropriately set according to the flow of gas to the wafer.
【００１０】本発明において、ウエハ上部に送るための
ガス導入管は、平面的に見て等間隔で配置されているこ
とが好ましい。この理由は、等間隔でガス導入管を配置
すれば、材料ガスをウエハ上に均一に供給できるからで
ある。なお、ガス導入管の数は特に限定されないが、２
個以上のガス導入管を等間隔で配置することが好まし
い。また、反応容器に送るガスは、１種類のガスを送っ
てもよいし、複数種のガスを複数のガス導入管を用いて
送ってもよい。In the present invention, it is preferable that the gas introduction pipes for sending the gas to the upper portion of the wafer are arranged at equal intervals in plan view. The reason for this is that if the gas introduction pipes are arranged at equal intervals, the material gas can be uniformly supplied onto the wafer. In addition, the number of gas introduction pipes is not particularly limited.
It is preferable to arrange at least two gas introduction pipes at equal intervals. As the gas to be sent to the reaction vessel, one kind of gas may be sent, or a plurality of kinds of gases may be sent using a plurality of gas introduction pipes.
【００１１】[0011]
【実施例】以下、本発明の実施例に係るＣＶＤ装置につ
いて図面を参照して説明する。 （実施例１）図１（Ａ），（Ｂ）を参照して説明する。
ここで、図１（Ａ）は本実施例１に係るＣＶＤ装置の全
体図、図１（Ｂ）は図１（Ａ）の装置の一構成であるガ
ス制御手段の説明図を示す。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A CVD apparatus according to an embodiment of the present invention will be described below with reference to the drawings. (Embodiment 1) A description will be given with reference to FIGS. 1 (A) and 1 (B).
Here, FIG. 1A is an overall view of a CVD apparatus according to the first embodiment, and FIG. 1B is an explanatory view of gas control means which is one configuration of the apparatus of FIG. 1A.
【００１２】図中の付番１１は、反応容器を示す。この
反応容器１１内には、ガス制御手段としての仕切部材１
２が反応容器１１に対して取り外し自在に配置されてい
る。この仕切部材１２は、図１（Ｂ）に示すように、筒
状体１２ａとこの筒状体の上部のつば部１２ｂとから構
成されている。前記反応容器１１には、例えばＳｉＨ ４
等の材料ガスを導入するガス導入管１３ａ，１３ｂが設
けられ、さらに不活性ガスを導入するガス導入管１３
ｃ、１３ｄが夫々設けられている。ここで、前記仕切部
材１２のつば部１２ｂは、ガス導入管１３ａ，１３ｂと
ガス導入管１３ｃ，１３ｄ間の略中央の反応容器内壁に
掛止されている。前記各ガス導入管１３ａ〜１３ｄに
は、夫々ガス量を調節するためのバルブ（図示せず）が
設けられている。Reference numeral 11 in the drawing denotes a reaction vessel. this
In the reaction vessel 11, a partition member 1 as a gas control means is provided.
2 is detachably disposed with respect to the reaction vessel 11.
You. As shown in FIG. 1B, the partition member 12
A cylindrical body 12a and an upper flange 12b of the cylindrical body.
Has been established. The reaction vessel 11 contains, for example, SiH 4
Gas introduction pipes 13a and 13b for introducing material gas such as
Gas introduction pipe 13 for introducing an inert gas.
c and 13d are provided respectively. Here, the partition
The flange 12b of the material 12 is connected to the gas introduction pipes 13a and 13b.
On the inner wall of the reaction vessel substantially at the center between the gas introduction pipes 13c and 13d.
Hanged. To each of the gas introduction pipes 13a to 13d
Each has a valve (not shown) for adjusting the gas amount.
Is provided.
【００１３】前記反応容器１１内の底部には、ウエハ１
４を支持するホルダー１５が配置されている。このホル
ダー１５の内部には、ウエハ１４を加熱するヒーター１
６が配置されている。ここで、ヒーター１６は電源１７
によって加熱される。また、前記反応容器１１の底部に
は、バルブ１８を介装した排気管１９が設けられてい
る。At the bottom of the reaction vessel 11, the wafer 1
A holder 15 for supporting 4 is arranged. Inside the holder 15, a heater 1 for heating the wafer 14 is provided.
6 are arranged. Here, the heater 16 is connected to a power supply 17.
Heated by At the bottom of the reaction vessel 11, an exhaust pipe 19 with a valve 18 interposed is provided.
【００１４】上記実施例１に係るＣＶＤ装置によれば、
反応容器１１内に材料ガスをウエハ１４の上部のみに流
しかつ不活性ガスをウエハ１４の反応容器１１の内部に
流す仕切部材１２を配置した構成になっているため、材
料ガス、不活性ガスの流量、ガス種を調節することによ
り、従来のように不活性ガスの影響をほとんど受けるこ
とがないとともに、反応容器内壁からのガスの跳ね返り
等による影響を受けることなく、材料ガスをウエハ１４
上部に、不活性ガスは処理に寄与しないウエハ周辺のホ
ルダー１５部分に選択的に送ることができる。従って、
ウエハ１４上に均一な膜を形成することができる。ま
た、材料ガスを反応容器内の限られた領域にのみ供給す
るため、材料ガスによる反応容器１１内壁への膜付着量
を低減できるとともに、材料ガスの消費量を低減するこ
とができる。更に、仕切部材１２は反応容器１１から取
り外し自在であるため、反応時仕切部材に付着した膜を
除去できるので、ウエハ１４への悪影響を低減できる。According to the CVD apparatus of the first embodiment,
Since the partition member 12 that allows the material gas to flow only into the upper portion of the wafer 14 and allows the inert gas to flow into the reaction container 11 of the wafer 14 is arranged in the reaction vessel 11, the material gas and the inert gas By adjusting the flow rate and the gas type, the material gas is hardly affected by the inert gas unlike the related art, and the material gas is not affected by the rebound of the gas from the inner wall of the reaction vessel.
At the top, the inert gas can be selectively delivered to a portion of the holder 15 around the wafer that does not contribute to the processing. Therefore,
A uniform film can be formed on the wafer 14. Further, since the material gas is supplied only to a limited area in the reaction vessel, the amount of the film attached to the inner wall of the reaction vessel 11 by the material gas can be reduced, and the consumption of the material gas can be reduced. Furthermore, since the partition member 12 is detachable from the reaction vessel 11, the film attached to the partition member during the reaction can be removed, so that the adverse effect on the wafer 14 can be reduced.
【００１５】なお、上記実施例１において、仕切部材の
筒状部の下端部は略ウエハの外周端に合うように設定さ
れているが、これに限らず、内側あるいは外側に多少変
動してもよい。In the first embodiment, the lower end of the cylindrical portion of the partition member is set so as to substantially match the outer peripheral end of the wafer. However, the present invention is not limited to this. Good.
【００１６】（実施例２）図２（Ａ），（Ｂ）を参照し
て説明する。ここで、図２（Ａ）は本実施例２に係るＣ
ＶＤ装置の全体図、図２（Ｂ）は図２（Ａ）の装置の一
構成である整流板の説明図を示す。但し、図１と同部材
は同符号を付して説明を省略する。(Embodiment 2) A description will be given with reference to FIGS. 2 (A) and 2 (B). Here, FIG. 2A shows C according to the second embodiment.
FIG. 2B is an overall view of the VD device, and FIG. 2B is an explanatory diagram of a rectifying plate which is one configuration of the device in FIG. 2A. However, the same members as those in FIG.
【００１７】実施例２に係るＣＶＤ装置は、仕切部材１
２の筒状部１２ａを実施例１の場合と比べ短くし、かつ
その上部開口に、図２（Ｂ）に示すような整流板２０を
設けたことを特徴とする。ここで、整流板２０には、多
数の丸穴２０ａが格子状に形成されている。The CVD apparatus according to the second embodiment includes a partition member 1
The second embodiment is characterized in that the second cylindrical portion 12a is shorter than that of the first embodiment, and a straightening plate 20 as shown in FIG. Here, a large number of round holes 20 a are formed in the current plate 20 in a lattice shape.
【００１８】実施例２によれば、整流板２０を設けるこ
とにより、実施例１の場合と比べ材料ガスが更にウエハ
１４上に均一に供給され、一層均一な膜を形成すること
ができる。According to the second embodiment, by providing the current plate 20, the material gas is further uniformly supplied onto the wafer 14 as compared with the first embodiment, so that a more uniform film can be formed.
【００１９】なお、上記実施例２では、整流板の穴の形
状が丸穴で格子状に形成されている場合について述べた
が、これに限らず、他の形状の穴でもよいし、また穴の
配置も上記実施例に記載されているものに限らない。In the above-described second embodiment, the case where the holes of the current plate are formed in a lattice shape with round holes has been described. However, the present invention is not limited to this, and holes having other shapes may be used. Are not limited to those described in the above embodiment.
【００２０】（実施例３）図３を参照する。但し、図１
と同部材は同符号を付して説明を省略する。実施例３に
係るＣＶＤ装置は、断面形状が逆八の字状の仕切板２１
を反応容器１１内にその上端が上下のガス導入管１３
ａ，１３ｂとガス導入管１３ｃ、１３ｄ間に位置するよ
うに配置したことを特徴とする。本実施例３によれば、
実施例１と同様な効果を有する。(Embodiment 3) Referring to FIG. However, FIG.
The same members are denoted by the same reference numerals and description thereof will be omitted. The CVD apparatus according to the third embodiment includes a partition plate 21 having a cross-sectional shape of an inverted figure of eight.
Are placed in a reaction vessel 11 with gas introduction pipes 13 having upper and lower ends.
a, 13b and the gas introduction pipes 13c, 13d. According to the third embodiment,
This has the same effect as the first embodiment.
【００２１】なお、上記実施例では、１種類の材料ガス
を反応容器のウエハ上に導入する場合について述べた
が、これに限らず、複数種の材料ガスを導入してもよ
い。また、ガス導入管も２箇所に設ける場合に限らず、
３箇所以上で且つ平面的にみて等間隔であればよい。更
に、上記実施例では、排気管は処理用チャンバーの底部
に１箇所設けられている場合であるが、これに限らな
い。In the above embodiment, one type of material gas is introduced on the wafer in the reaction vessel. However, the present invention is not limited to this, and a plurality of types of material gas may be introduced. In addition, the gas introduction pipe is not limited to being provided at two places,
It suffices that the distance is three or more and that they are at equal intervals in plan view. Further, in the above embodiment, the exhaust pipe is provided at one place at the bottom of the processing chamber. However, the present invention is not limited to this.
【００２２】また、上記実施例では、ＣＶＤ装置に適用
した場合について述べたが、これに限らず、ガスを被処
理物に均一に送る目的に使用される半導体処理装置全般
に使用可能である。In the above embodiment, the case where the present invention is applied to a CVD apparatus has been described. However, the present invention is not limited to this, and the present invention can be applied to all semiconductor processing apparatuses used for uniformly sending gas to an object to be processed.
【００２３】[0023]
【発明の効果】以上詳述した如く本発明によれば、反応
容器内に、被処理物に供給する材料ガス又は反応性ガス
と被処理物の周囲に供給する不活性ガスとを独立に制御
するガス制御手段を設けた構成にすることにより、被処
理物上に材料ガス又は反応性ガスを均一に導入し、もっ
て均一な膜をウエハ上に形成しえるとともに、膜付着量
の低減、材料ガスの消費量の低減をなしえるしえる半導
体処理装置を提供できる。As described above, according to the present invention, the material gas or the reactive gas supplied to the object to be treated and the inert gas supplied to the periphery of the object to be treated are independently controlled in the reaction vessel. In this configuration, the material gas or the reactive gas can be uniformly introduced onto the object to be processed, and a uniform film can be formed on the wafer. A semiconductor processing device capable of reducing gas consumption can be provided.
【図１】本発明の実施例１に係るＣＶＤ装置の説明図。FIG. 1 is an explanatory diagram of a CVD apparatus according to a first embodiment of the present invention.
【図２】本発明の実施例２に係るＣＶＤ装置の説明図。FIG. 2 is an explanatory diagram of a CVD apparatus according to a second embodiment of the present invention.
【図３】本発明の実施例３に係るＣＶＤ装置の説明図。FIG. 3 is an explanatory diagram of a CVD apparatus according to a third embodiment of the present invention.
【図４】従来のＣＶＤ装置の説明図。FIG. 4 is an explanatory view of a conventional CVD apparatus.
１１…反応容器、 １２…仕切部材（ガス制御手段）、 １３ａ，１３ｂ，１３ｃ，１３ｄ…ガス導入管、 １４…ウエハ、 １５…ホルダー（支持部材）、 １６…ヒーター、 １７…電源、 １８…バルブ、 １９…排気管（排気手段）、 ２０…整流板、 ２１…仕切板。 DESCRIPTION OF SYMBOLS 11 ... Reaction container, 12 ... Partition member (gas control means), 13a, 13b, 13c, 13d ... Gas introduction pipe, 14 ... Wafer, 15 ... Holder (supporting member), 16 ... Heater, 17 ... Power supply, 18 ... Valve , 19: exhaust pipe (exhaust means), 20: straightening plate, 21: partition plate.
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4K030 CA12 EA03 GA01 KA24 5F004 AA01 BB28 BC03 BD04 DA25 5F045 BB02 BB08 DP04 DQ11 EE14 EE20 EF05 EF15 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4K030 CA12 EA03 GA01 KA24 5F004 AA01 BB28 BC03 BD04 DA25 5F045 BB02 BB08 DP04 DQ11 EE14 EE20 EF05 EF15
Claims (5)
れ、被処理物を支持する支持部材と、前記反応容器内に
ガスを導入する複数のガス導入口と、前記反応容器内を
排気する排気手段とを具備し、 前記反応容器内に、被処理物に供給する材料ガス又は反
応性ガスと被処理物の周囲に供給する不活性ガスとを独
立に制御するガス制御手段を設けたことを特徴とする半
導体処理装置。1. A reaction vessel, a support member disposed in the reaction vessel and supporting an object to be processed, a plurality of gas inlets for introducing a gas into the reaction vessel, and exhausting the inside of the reaction vessel. A gas control means for independently controlling a material gas or a reactive gas to be supplied to the object to be processed and an inert gas to be supplied around the object to be processed in the reaction vessel. A semiconductor processing apparatus characterized by the above-mentioned.
って上下に少なくとも２箇所配置され、かつ前記ガス制
御手段は上部につば部を有する筒状体であり、しかも筒
状体のつば部が上下のガス導入口間に位置することを特
徴とする請求項１記載の半導体処理装置。2. The gas inlet according to claim 1, wherein said gas inlet is disposed in at least two places vertically along a longitudinal direction of the reaction vessel, and said gas control means is a cylindrical body having a flange at an upper part. 2. The semiconductor processing apparatus according to claim 1, wherein the unit is located between upper and lower gas inlets.
って上下に少なくとも２箇所配置され、かつ前記ガス制
御手段は断面形状が逆八の字状の仕切板であり、しかも
仕切板の上端が上下のガス導入口間に位置することを特
徴とする請求項１記載の半導体処理装置。3. The gas inlet is disposed at least two places vertically along the longitudinal direction of the reaction vessel, and the gas control means is a partition plate having an inverted-octagonal cross section, and 2. The semiconductor processing apparatus according to claim 1, wherein an upper end is located between upper and lower gas inlets.
穴を有した整流板が配置されていることを特徴とする請
求項２記載の半導体処理装置。4. The semiconductor processing apparatus according to claim 2, wherein a rectifying plate having a plurality of gas passage holes is disposed at an opening of said cylindrical body.
れていることを特徴とする請求項４記載の半導体処理装
置。5. The semiconductor processing apparatus according to claim 4, wherein a large number of holes are formed in the rectifying plate in a lattice shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000072243A JP2001267248A (en) | 2000-03-15 | 2000-03-15 | Semiconductor processor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000072243A JP2001267248A (en) | 2000-03-15 | 2000-03-15 | Semiconductor processor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001267248A true JP2001267248A (en) | 2001-09-28 |
Family
ID=18590692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000072243A Pending JP2001267248A (en) | 2000-03-15 | 2000-03-15 | Semiconductor processor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001267248A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008218734A (en) * | 2007-03-05 | 2008-09-18 | Nuflare Technology Inc | Vapor phase growth method and apparatus |
| JP2013089972A (en) * | 2011-10-19 | 2013-05-13 | Advanced Micro Fabrication Equipment Inc Shanghai | Inductive coupling plasma source design for plasma uniformity and efficiency enhancement |
| CN104485272A (en) * | 2014-12-19 | 2015-04-01 | 中国科学院嘉兴微电子仪器与设备工程中心 | Plasma equipment and chamber structure applied to plasma equipment |
| TWI495004B (en) * | 2011-10-19 | 2015-08-01 | ||
| KR101856689B1 (en) * | 2017-10-23 | 2018-05-14 | 주식회사 기가레인 | Substrate processing apparatus including an elevating induced part |
| KR101987577B1 (en) * | 2018-01-24 | 2019-06-10 | 주식회사 기가레인 | Substrate processing apparatus including an exhaust adjusting part linked with an elevating inducing part |
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2000
- 2000-03-15 JP JP2000072243A patent/JP2001267248A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008218734A (en) * | 2007-03-05 | 2008-09-18 | Nuflare Technology Inc | Vapor phase growth method and apparatus |
| JP2013089972A (en) * | 2011-10-19 | 2013-05-13 | Advanced Micro Fabrication Equipment Inc Shanghai | Inductive coupling plasma source design for plasma uniformity and efficiency enhancement |
| TWI495004B (en) * | 2011-10-19 | 2015-08-01 | ||
| CN104485272A (en) * | 2014-12-19 | 2015-04-01 | 中国科学院嘉兴微电子仪器与设备工程中心 | Plasma equipment and chamber structure applied to plasma equipment |
| KR101856689B1 (en) * | 2017-10-23 | 2018-05-14 | 주식회사 기가레인 | Substrate processing apparatus including an elevating induced part |
| CN109698155A (en) * | 2017-10-23 | 2019-04-30 | 吉佳蓝科技股份有限公司 | The substrate board treatment of guide portion including lifting |
| TWI659499B (en) * | 2017-10-23 | 2019-05-11 | 南韓商吉佳藍科技股份有限公司 | Substrate processing device including lifting guide |
| CN109698155B (en) * | 2017-10-23 | 2020-02-11 | 吉佳蓝科技股份有限公司 | Substrate processing apparatus including elevating guide part |
| KR101987577B1 (en) * | 2018-01-24 | 2019-06-10 | 주식회사 기가레인 | Substrate processing apparatus including an exhaust adjusting part linked with an elevating inducing part |
| CN112447472A (en) * | 2019-08-27 | 2021-03-05 | 中微半导体设备(上海)股份有限公司 | Plasma reaction device for improving uniform distribution of gas |
| CN112447472B (en) * | 2019-08-27 | 2023-03-07 | 中微半导体设备(上海)股份有限公司 | Plasma reaction device for improving uniform distribution of gas |
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