TWI659499B - Substrate processing device including lifting guide - Google Patents
Substrate processing device including lifting guide Download PDFInfo
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- TWI659499B TWI659499B TW107136352A TW107136352A TWI659499B TW I659499 B TWI659499 B TW I659499B TW 107136352 A TW107136352 A TW 107136352A TW 107136352 A TW107136352 A TW 107136352A TW I659499 B TWI659499 B TW I659499B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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Abstract
本發明涉及一種包括在腔室之內部升降之引導部之基板處理裝置。本發明之包括升降之引導部之基板處理裝置包括：腔室，其包括作為形成處理物質之區域之形成區域、作為用上述處理物質處理基板之區域之處理區域以及作為與泵連接而排出上述處理物質之區域之排出區域；夾盤，其設置於上述腔室之內部，且在上部安放上述基板以使上述基板位於上述處理區域；以及引導部，其在上述基板被搬入和搬出上述腔室時在腔室之內部上升，在處理上述基板時在上述腔室之內部下降，且形成有以向上述處理區域方向直徑逐漸減小之方式貫通中央之引導孔，透過上述引導孔，將在上述形成區域形成之上述處理物質引導至上述處理區域。The present invention relates to a substrate processing apparatus including a guide portion that is raised and lowered inside a chamber. The substrate processing apparatus including a lifting guide of the present invention includes a chamber including a forming region as a region for forming a processing substance, a processing region as a region for processing a substrate with the above-mentioned processing substance, and discharging the above-mentioned process as being connected to a pump. A discharge region of a substance region; a chuck that is disposed inside the chamber and places the substrate on the upper portion so that the substrate is located in the processing region; and a guide portion that is used when the substrate is carried in and out of the chamber Ascending inside the chamber, descending inside the chamber when processing the substrate, and forming a guide hole penetrating the center so that the diameter gradually decreases in the direction of the processing region. The processing substance formed in the region is guided to the processing region.
Description
本發明涉及一種包括在腔室之內部升降之引導部之基板處理裝置。The present invention relates to a substrate processing apparatus including a guide portion that is raised and lowered inside a chamber.
基板處理裝置是執行半導體工程之裝置，詳細而言，是用處理物質處理基板之裝置。The substrate processing device is a device for performing semiconductor engineering, and in detail, it is a device for processing a substrate with a processing substance.
此時，基板可以意指晶圓或安裝有晶圓之托盤，處理物質可以意指用於處理基板之氣體或電漿。At this time, the substrate may mean a wafer or a tray on which the wafer is mounted, and the processing substance may mean a gas or a plasma for processing the substrate.
例如，基板處理裝置可以是用電漿執行刻蝕、蒸鍍以及灰化中之一個以上之裝置，或用金屬氣體執行蒸鍍之裝置。For example, the substrate processing apparatus may be an apparatus that performs one or more of etching, vapor deposition, and ashing with a plasma, or an apparatus that performs vapor deposition with a metal gas.
這種基板處理裝置包括腔室。This substrate processing apparatus includes a chamber.
在腔室之內部包括作為形成處理物質之區域之形成區域、作為用處理物質處理基板之區域之處理區域、以及作為與泵連接而排出處理物質之區域之排出區域。The inside of the chamber includes a formation region as a region where a processing substance is formed, a processing region as a region where a substrate is processed with the processing substance, and a discharge region as a region connected to a pump to discharge the processing substance.
基板透過形成於形成區域與處理區域之間之基板出入口由機械臂移送，從腔室之外部被搬入腔室之內部而安放於夾盤之上部。The substrate passes through the substrate inlet and outlet formed between the formation region and the processing region, and is transferred by the robot arm, and is carried into the chamber from the outside of the chamber and is placed on the upper part of the chuck.
然而，為了進行基板處理，形成區域與處理區域之間接近，因而存在基板被搬入腔室之內部之空間不足之問題。However, in order to perform substrate processing, the formation area and the processing area are close to each other, so that there is a problem that the space in which the substrate is carried into the chamber is insufficient.
為解決這種問題，以往，透過夾盤升降來確保基板被搬入腔室之內部之空間。In order to solve this problem, conventionally, the substrate is moved into the space inside the chamber by lifting the chuck.
然而，由於夾盤包括用於固定基板和控制溫度之結構等多種結構，因而存在如下問題：為了確保夾盤在腔室之內部升降之空間，腔室之大小增加；因夾盤之重量，升降要求較多動力；夾盤所包括之多種結構也要與夾盤一同升降。 現有技術文獻 專利文獻However, since the chuck includes various structures for fixing the substrate and controlling the temperature, there are the following problems: In order to ensure the space for the chuck to rise and fall inside the chamber, the size of the chamber is increased; due to the weight of the chuck, it is raised and lowered. Requires more power; the various structures included in the chuck also need to be raised and lowered together with the chuck. Prior Art Literature Patent Literature
專利文獻0001：KR 10-1443792 B1（2014.09.17） 專利文獻0002：KR 10-2014-0103872 A（2014.08.27） 專利文獻0003：KR 10-2006-0013987 A（2006.02.14）Patent document 0001: KR 10-1443792 B1 (2014.09.17) Patent document 0002: KR 10-2014-0103872 A (2014.08.27) Patent document 0003: KR 10-2006-0013987 A (2006.02.14)
技術問題technical problem
本發明之課題旨在解決前述之問題。The problem of the present invention is to solve the aforementioned problems.
本發明之目的在於提供一種包括升降之引導部之基板處理裝置。 技術方案An object of the present invention is to provide a substrate processing apparatus including a lifting guide. Technical solutions
用於達成上述目的之本發明是一種包括升降之引導部之基板處理裝置，包括：腔室，其包括作為形成處理物質之區域之形成區域、作為用上述處理物質處理基板之區域之處理區域以及作為與泵連接而排出上述處理物質之區域之排出區域；夾盤，其設置於上述腔室之內部，且在上部安放上述基板以使上述基板位於上述處理區域；以及引導部，其在上述基板被搬入和搬出上述腔室時在腔室之內部上升，在處理上述基板時在上述腔室之內部下降，且形成有以向上述處理區域方向直徑逐漸減小之方式貫通中央之引導孔，透過上述引導孔，將在上述形成區域形成之上述處理物質引導至上述處理區域。The present invention for achieving the above object is a substrate processing apparatus including a lifting guide, including a chamber including a formation region as a region where a processing substance is formed, a processing region as a region where a substrate is processed with the processing substance, and A discharge area which is an area connected to a pump to discharge the processing substance; a chuck, which is provided inside the chamber, and the substrate is placed on the upper portion so that the substrate is located in the processing area; and a guide portion is provided on the substrate When being carried in and out of the chamber, it rises inside the chamber, and when the substrate is processed, it descends inside the chamber, and a guide hole is formed through the center to gradually reduce the diameter in the direction of the processing area, and penetrates through the center. The guide hole guides the processing substance formed in the formation region to the processing region.
上述包括升降之引導部之基板處理裝置包括：連動部，其貫通上述腔室而設置，且與上述引導部連動而升降上述引導部；以及驅動部，其設置於上述腔室之外部，且向上述連動部提供驅動力以使上述連動部升降。The above-mentioned substrate processing apparatus including a lifting guide includes a linking portion provided through the chamber and lifting the guide in conjunction with the guide; and a driving portion provided outside the chamber and directed toward the chamber. The interlocking portion provides driving force to raise and lower the interlocking portion.
上述包括升降之引導部之基板處理裝置包括：引導下降界線凸台，其從上述腔室內壁凸出，且形成於上述引導部下降之界線。The above-mentioned substrate processing apparatus including a lifting guide includes a guide descending boundary line boss protruding from the inner wall of the chamber and formed on the descending boundary of the guide portion.
上述包括升降之引導部之基板處理裝置包括：第一導向部，其以上下較長地延伸之形狀位於上述腔室之內部；以及第二導向部，其形成於上述引導部，且形成為對應於上述第一導向部之形狀，以防止上述引導部升降時從上述第一導向部脫離。The above-mentioned substrate processing apparatus including a lifting guide includes: a first guide, whose upper and lower shapes extend longer are located inside the cavity; and a second guide, which is formed on the guide and is formed to correspond to The shape of the first guide portion is to prevent the guide portion from being separated from the first guide portion when the guide portion is raised and lowered.
上述包括升降之引導部之基板處理裝置之特徵在於，包括：限制部，其在內側插入基板，且限制上述處理物質處理上述基板；限制連動孔，其形成於上述限制部；以及限制卡止部，其以大於上述限制連動孔之直徑之直徑形成於上述連動部之一側，上述連動部之規定區間以小於上述限制連動孔之直徑之直徑形成，在升降時通過上述限制連動孔，在卡止於上述限制卡止部時與上述連動部連動而升降。The above-mentioned substrate processing apparatus including a lifting guide includes a restriction portion that inserts a substrate inside and restricts the processing substance from processing the substrate; a restriction interlocking hole formed in the restriction portion; and a restriction locking portion. It is formed on one side of the interlocking part with a diameter larger than the diameter of the restrictive interlocking hole, and the prescribed interval of the interlocking part is formed with a diameter smaller than the diameter of the restrictive interlocking hole. When it stops at the said restriction | locking | locking part, it moves up and down in cooperation with the said interlocking part.
上述包括升降之引導部之基板處理裝置之特徵在於，包括：限制處理部，其形成於上述限制部之內側，上述限制處理部為覆蓋上述基板之外側之一部分之形狀，或高於上述基板之高度地凸出而圍繞上述基板之外側之形狀。The above-mentioned substrate processing apparatus including a lifting guide is characterized in that it includes a restriction processing section formed inside the restriction section, and the restriction processing section has a shape that covers a part of the outer side of the substrate, or is higher than the substrate. A shape that is highly convex and surrounds the outer side of the substrate.
上述包括升降之引導部之基板處理裝置之特徵在於，包括：放置部，其上升而接收上述基板，並下降而將上述基板安放於上述夾盤之上部；放置連動孔，其形成於上述放置部；以及放置卡止部，其以大於上述放置連動孔之直徑之直徑形成於上述連動部之一側，上述連動部之規定區間以小於上述放置連動孔之直徑之直徑形成，在升降時通過上述放置連動孔，在卡止於上述放置卡止部時與上述連動部連動而升降。The above-mentioned substrate processing apparatus including a lifting guide is characterized in that it includes: a placing section that rises to receive the substrate, and descends to place the substrate on the chuck; and a linking hole that is formed in the placing section. ; And a locking portion, which is formed on one side of the linking portion with a diameter larger than the diameter of the positioning linking hole, and a predetermined interval of the linking portion is formed with a diameter smaller than the diameter of the positioning linking hole, and passes through the above during lifting When the interlocking hole is placed, the interlocking hole is interlocked with the interlocking portion to be raised and lowered when the interlocking portion is locked.
上述包括升降之引導部之基板處理裝置包括：放置安放孔，其以小於基板之直徑形成於上述放置部之內側；以及夾盤安放部，其以從上述夾盤凸出之結構插入於上述放置安放孔，且上面與上述基板之背面接觸而用靜電固定上述基板。 發明之效果The above-mentioned substrate processing apparatus including a lifting guide includes: a placement mounting hole formed on the inside of the placement portion with a diameter smaller than a substrate; and a chuck placement portion inserted into the placement with a structure protruding from the chuck. A hole is placed, and the upper surface is in contact with the back surface of the substrate to statically fix the substrate. Effect of the invention
第一，引導部上升而確保形成區域與處理區域之間之空間，因而具有無需使夾盤上升即可將基板搬入腔室之內部之優點。 第二，具有能夠限制引導部必要以上地升降之優點。 第三，具有第一導向部和第二導向部在引導部上升或下降時對引導部進行導向而防止向一側傾斜之優點。 第四，具有無需追加結構，限制部即可與引導部連動而升降之優點，且具有在處理基板時能夠根據需求來調節引導部與基板之間之間距之優點。 第五，具有無需追加另外結構，放置部即可與引導部連動而升降之優點，且具有在處理基板時能夠根據需求來調節引導部與基板之間之間距之優點。First, the guide portion is raised to secure a space between the formation area and the processing area. Therefore, there is an advantage that the substrate can be carried into the chamber without raising the chuck. Second, there is an advantage that it is possible to restrict the elevation of the guide portion as necessary. Third, there is an advantage that the first guide portion and the second guide portion guide the guide portion when the guide portion rises or falls to prevent the guide portion from tilting to one side. Fourth, there is an advantage that the restriction portion can move up and down in conjunction with the guide portion without the need for an additional structure, and also has the advantage that the distance between the guide portion and the substrate can be adjusted according to demand when processing the substrate. Fifth, there is an advantage that the placement portion can be moved up and down in conjunction with the guide portion without adding another structure, and also has the advantage that the distance between the guide portion and the substrate can be adjusted according to demand when processing the substrate.
由於夾盤200包括用於固定基板10和控制溫度之結構等多種結構，因而存在如下問題：為了確保夾盤200在腔室100之內部上升之空間，腔室100之大小增加；因夾盤200之重量，升降要求較多動力；夾盤200所包括之多種結構也要與夾盤200一同升降。Since the chuck 200 includes various structures such as a structure for fixing the substrate 10 and a temperature control structure, there are the following problems: In order to ensure a space for the chuck 200 to rise inside the chamber 100, the size of the chamber 100 is increased; The weight requires more power for lifting; the various structures included in the chuck 200 also need to be raised and lowered together with the chuck 200.
為解決這種問題，如圖1和圖2所示，本發明之包括升降之引導部之基板處理裝置包括腔室100、夾盤200、引導部500、連動部300以及驅動部400。In order to solve such a problem, as shown in FIGS. 1 and 2, the substrate processing apparatus of the present invention including a lifting guide includes a chamber 100, a chuck 200, a guide 500, a linkage 300, and a driving 400.
在腔室100之內部包括作為形成處理物質之區域之形成區域110、作為用處理物質處理基板10之區域之處理區域120和作為與泵連接而排出處理物質之區域之排出區域130。The inside of the chamber 100 includes a formation region 110 as a region where a processing substance is formed, a processing region 120 as a region where the substrate 10 is processed with the processing substance, and a discharge region 130 as a region connected to a pump to discharge the processing substance.
夾盤200設置於腔室100之內部，且在上部安放基板10以使基板10位於處理區域120。The chuck 200 is disposed inside the chamber 100, and the substrate 10 is placed on the upper part so that the substrate 10 is located in the processing area 120.
引導部500在基板10被搬入或搬出腔室100時在腔室100之內部上升，在處理基板10時在腔室100之內部下降，且形成有向處理區域120方向直徑逐漸減少之方式貫通中央之引導孔510，透過引導孔510，將在形成區域110形成之處理物質引導至處理區域120。The guide part 500 rises inside the chamber 100 when the substrate 10 is carried in or out of the chamber 100, and descends inside the chamber 100 when the substrate 10 is processed, and is formed to pass through the center so that the diameter gradually decreases toward the processing region 120. The guide hole 510 guides the processing substance formed in the formation region 110 to the processing region 120 through the guide hole 510.
連動部300貫通腔室100而設置，且與引導部500連動而升降引導部500。The interlocking portion 300 is provided penetrating the cavity 100, and interlocks with the guide portion 500 to lift and lower the guide portion 500.
驅動部400設置於腔室100之外部，且向連動部300提供驅動力以使連動部300升降。The driving part 400 is disposed outside the chamber 100 and provides driving force to the linking part 300 to lift and lower the linking part 300.
驅動部400可以意指缸體和馬達。The driving part 400 may mean a cylinder and a motor.
當驅動部400為伸縮之缸體時，連動部300可以是與驅動部400連動而升降之棒狀。When the driving part 400 is a telescopic cylinder, the interlocking part 300 may be in the shape of a rod that moves up and down in conjunction with the driving part 400.
當驅動部400為旋轉之馬達時，連動部300可以是與驅動部400連動而旋轉之滾珠螺杆，引導部500可以連接於透過滾珠螺杆之旋轉升降之螺母殼體而升降。When the driving part 400 is a rotating motor, the linking part 300 may be a ball screw that rotates in conjunction with the driving part 400, and the guide part 500 may be connected to a nut housing that is raised and lowered through the rotation of the ball screw.
驅動部400可以位於腔室100之下部，或者，如圖3所示，驅動部400可以位於腔室100之上部。The driving part 400 may be located below the chamber 100, or, as shown in FIG. 3, the driving part 400 may be located above the chamber 100.
驅動部400可以連接於連接板310而向多個連動部300同時提供驅動力，或者，如圖4所示，驅動部400可以分別連接於連動部300而向各個連動部300提供驅動力。The driving part 400 may be connected to the connection plate 310 to provide driving force to a plurality of interlocking parts 300 at the same time, or, as shown in FIG. 4, the driving part 400 may be respectively connected to the interlocking parts 300 to provide driving force to each of the interlocking parts 300.
可以在連動部300之一端固定引導部500而連動。The guide portion 500 may be fixed at one end of the interlocking portion 300 and interlocked.
此時，連動部300可以是結合的或延伸的。At this time, the linkage part 300 may be combined or extended.
另外，如圖5之（a）所示，引導部500可以不固定於連動部300，而是與連動部300之一端接觸而與連動部300連動。In addition, as shown in FIG. 5 (a), the guide portion 500 may not be fixed to the interlocking portion 300, but may be in contact with one end of the interlocking portion 300 to interlock with the interlocking portion 300.
另外，如圖5之（b）所示，引導部500可以與連接於連動部300之一端之彈簧針320而與連動部300連動。In addition, as shown in FIG. 5 (b), the guide portion 500 may interlock with the interlocking portion 300 with a pogo pin 320 connected to one end of the interlocking portion 300.
另外，如圖5之（c）所示，亦可為，引導部500形成有引導連動孔520，連動部300形成有大於引導連動孔520之直徑地凸出之引導卡止部530，引導部500藉由引導連動孔520與引導卡止部530之直徑差卡止而與連動部300連動。In addition, as shown in FIG. 5 (c), the guide portion 500 may be formed with a guide link hole 520, and the link portion 300 may be formed with a guide locking portion 530 that protrudes larger than the diameter of the guide link hole 520. 500 is interlocked with the interlocking portion 300 by a difference in diameter between the guide interlocking hole 520 and the guide locking portion 530.
此時，引導卡止部530可以是結合於連動部300的或延伸的。At this time, the guide locking portion 530 may be coupled to the interlocking portion 300 or extended.
下面，分析本發明之動作。如圖1所示，引導部500透過連動部300和驅動部400上升而確保形成區域110與處理區域120之間之空間。Next, the operation of the present invention will be analyzed. As shown in FIG. 1, the guide portion 500 ascends through the interlocking portion 300 and the driving portion 400 to secure a space between the formation area 110 and the processing area 120.
之後，若基板10由機械臂210移送而被搬入腔室100之內部，則由升降銷220從機械臂210接收基板10並將基板10安放於夾盤200之上部。After that, if the substrate 10 is transferred into the chamber 100 by the robot arm 210, the substrate 10 is received from the robot arm 210 by the lift pin 220 and placed on the chuck 200.
之後，如圖2所示，引導部500透過連動部300和驅動部400下降而重新縮小形成區域110與處理區域120之間之空間。Thereafter, as shown in FIG. 2, the guide portion 500 descends through the interlocking portion 300 and the driving portion 400 to reduce the space between the formation area 110 and the processing area 120 again.
如此，由於引導部500上升而確保形成區域110與處理區域120之間之空間，因而具有無需使夾盤200上升即可將基板10搬入腔室100之內部之優點。In this way, the space between the formation region 110 and the processing region 120 is ensured by the ascent of the guide portion 500, so that the substrate 10 can be carried into the chamber 100 without raising the chuck 200.
引導部500升降時，根據情況，會存在過度升降之問題。When the guide part 500 is raised or lowered, there may be a problem of excessive lift depending on the situation.
為解決這種問題，如圖1和圖2所示，在引導部500升降之界線可以形成有從腔室100之內壁凸出之引導上升界線凸台540和引導下降界線凸台550。To solve this problem, as shown in FIG. 1 and FIG. 2, a guide ascent line boss 540 and a guide ascent line boss 550 protruding from the inner wall of the chamber 100 may be formed on the boundary of the guide part 500 ascending and descending.
形成於引導部500之上升界線之引導上升界線凸台540限制引導部500向引導上升界線凸台540之上部上升，形成於引導部500之下降界線之引導下降界線凸台550限制引導部500向引導下降界線凸台550之下部下降。The guide ascent line boss 540 formed on the ascent line of the guide part 500 restricts the guide part 500 from ascending to the upper part of the guide ascent line boss 540, and the guide descent line boss 550 formed on the ascent line of the guide part 500 limits the direction of the guide part 500 The lower part of the descending line boss 550 is guided to descend.
引導上升界線凸台540和引導下降界線凸台550可以沿腔室100之內壁周邊凸出，或沿腔室100之內壁周邊部分地凸出。The guiding ascent line boss 540 and the guiding ascent line boss 550 may protrude along the periphery of the inner wall of the chamber 100 or partially protrude along the periphery of the inner wall of the chamber 100.
如此，具有能夠限制引導部500過度升降之優點。In this way, there is an advantage that the guide portion 500 can be restricted from being raised and lowered excessively.
引導部500升降時，當驅動力偏向一側時，存在引導部500向一側傾斜之問題。When the guide part 500 moves up and down, when the driving force is biased to one side, there is a problem that the guide part 500 is inclined to one side.
為解決這種問題，如圖6和圖7所示，包括第一導向部560和第二導向部570。To solve this problem, as shown in FIGS. 6 and 7, a first guide portion 560 and a second guide portion 570 are included.
第一導向部560以上下較長地延伸之形狀位於腔室100之內部。The shape of the first guide portion 560 extending up and down is located inside the chamber 100.
第二導向部570形成於引導部500，且形成為對應於第一導向部560之形狀，以防止引導部500升降時從第一導向部560脫離。The second guide portion 570 is formed in the guide portion 500 and is formed in a shape corresponding to the first guide portion 560 to prevent the guide portion 500 from being separated from the first guide portion 560 when the guide portion 500 is raised and lowered.
如圖6所示，第一導向部560為棒狀，第二導向部570為第一導向部560所貫通之孔。As shown in FIG. 6, the first guide portion 560 is rod-shaped, and the second guide portion 570 is a hole penetrated by the first guide portion 560.
另外，如圖7所示，亦可為，第一導向部560為從腔室100沿上下方向較長地凸出之棒狀，第二導向部570為第一導向部560所貫通之溝槽。In addition, as shown in FIG. 7, the first guide portion 560 may have a rod shape that protrudes from the chamber 100 in a vertical direction, and the second guide portion 570 may be a groove penetrated by the first guide portion 560. .
另外，亦可為，第一導向部560為從腔室100之上部向下部較長地形成之溝槽，第二導向部570為從插入於溝槽之引導部500凸出之突起。In addition, the first guide portion 560 may be a groove formed longer from the upper portion to the lower portion of the chamber 100, and the second guide portion 570 may be a protrusion protruding from the guide portion 500 inserted into the groove.
如此，具有第一導向部560和第二導向部570在引導部500上升或下降時對引導部500進行導向而防止向一側傾斜之優點。 ＜追加設置限制部600之實施例＞In this way, there is an advantage that the first guide portion 560 and the second guide portion 570 guide the guide portion 500 when the guide portion 500 is raised or lowered and prevent the guide portion 500 from tilting to one side. <Example of Additional Setting Restriction Unit 600>
除了引導部500外，連動部300還可以與限制部600連動而升降。In addition to the guide portion 500, the interlocking portion 300 may be interlocked with the restricting portion 600 to be raised and lowered.
限制部600可以固定於連動部300之一側，與連動部300連動而升降。The restricting portion 600 may be fixed to one side of the interlocking portion 300, and may move up and down in conjunction with the interlocking portion 300.
然而，若限制部600固定於連動部300之一側，則存在處理基板10時無法根據需求調節引導部500與基板10之間之間距之問題。However, if the restricting portion 600 is fixed to one side of the interlocking portion 300, there is a problem that the distance between the guide portion 500 and the substrate 10 cannot be adjusted according to demand when the substrate 10 is processed.
為解決這種問題，如本發明之圖8至圖10所示，本發明之包括升降之引導部之基板處理裝置包括限制部600、限制處理部610、限制連動孔620以及限制卡止部630。In order to solve such a problem, as shown in FIGS. 8 to 10 of the present invention, the substrate processing apparatus of the present invention including a lifting guide includes a restricting portion 600, a restricting processing portion 610, a restricting interlocking hole 620, and a restricting locking portion 630. .
限制部600在內側插入基板10，且限制處理物質處理基板10。The restriction portion 600 inserts the substrate 10 inside and restricts the processing substance from processing the substrate 10.
限制處理部610從限制部600之內側延伸而形成。The restriction processing portion 610 is formed by extending from the inside of the restriction portion 600.
限制處理部610可以是覆蓋基板10之外側之一部分之形狀，或者，如圖11所示，可以是高於基板10之高度地凸出而圍繞基板10之外側之形狀。The restriction processing portion 610 may have a shape covering a part of the outer side of the substrate 10, or, as shown in FIG. 11, a shape protruding higher than the substrate 10 and surrounding the outer side of the substrate 10.
限制連動孔620形成於限制部600。A restriction interlocking hole 620 is formed in the restriction portion 600.
限制卡止部630以大於限制連動孔620之直徑之直徑形成於連動部300之一側。The restriction locking portion 630 is formed on one side of the linkage portion 300 with a diameter larger than the diameter of the restriction linkage hole 620.
如圖12之（a）所示，限制卡止部630可以透過連接有連動部300之直徑不同之區間而形成。As shown in FIG. 12 (a), the restricting locking portion 630 may be formed by a section having a different diameter connected to the linking portion 300.
如圖12之（b）所示，限制卡止部630可以凸出於連動部300之一側而形成。As shown in FIG. 12 (b), the restriction locking portion 630 may be formed to protrude from one side of the interlocking portion 300.
連動部300之規定區間以小於限制連動孔620之直徑之直徑形成，在升降時，通過限制連動孔620，若卡止於限制卡止部630，則與連動部300連動而升降。The predetermined interval of the interlocking portion 300 is formed with a diameter smaller than the diameter of the restricting interlocking hole 620. When the interlocking portion 620 is locked at the restricting locking portion 630 during lifting, the interlocking portion 300 is lifted and lowered in conjunction with the interlocking portion 300.
即，如圖9和圖10所示，引導部500升降之一部分區間被解除與限制部600之連動，只有引導部500升降，如圖8所示，當為了搬入或搬出基板10而需要升降限制部600時，限制部600與引導部500一同升降。That is, as shown in FIG. 9 and FIG. 10, a part of the elevation of the guide portion 500 is released from the linkage with the restriction portion 600, and only the guide portion 500 is raised and lowered. As shown in FIG. In the case of the part 600, the restriction part 600 moves up and down together with the guide part 500.
如此，具有無需追加結構，限制部600即可與引導部500連動而升降之優點，且具有處理基板10時能夠根據需求調節引導部500與基板10之間之間距之優點。 ＜追加設置放置部700之實施例＞In this way, there is an advantage that the restriction portion 600 can move up and down in conjunction with the guide portion 500 without additional structure, and also has an advantage that the distance between the guide portion 500 and the substrate 10 can be adjusted according to demand when processing the substrate 10. <Example in which the placement unit 700 is additionally provided>
除了引導部500外，連動部300還可以與放置部700連動而升降。In addition to the guide portion 500, the interlocking portion 300 may be interlocked with the placing portion 700 and raised and lowered.
放置部700可以固定於連動部300之一側，與連動部300連動而升降。The placement part 700 may be fixed to one side of the interlocking part 300, and may move up and down in conjunction with the interlocking part 300.
然而，若放置部700固定於連動部300之一側，則存在處理基板10時無法根據需求調節引導部500與基板10之間之間距之問題。However, if the placement part 700 is fixed to one side of the interlocking part 300, there is a problem that the distance between the guide part 500 and the substrate 10 cannot be adjusted according to demand when the substrate 10 is processed.
為解決這種問題，如本發明之圖13至圖14所示，本發明之包括升降之引導部之基板處理裝置包括放置部700、放置安放孔710、夾盤安放部230、放置連動孔720以及放置卡止部730。In order to solve such a problem, as shown in FIGS. 13 to 14 of the present invention, the substrate processing apparatus of the present invention including a lifting guide includes a placement part 700, a placement mounting hole 710, a chuck placement part 230, and a placement linkage hole 720. And placing a locking portion 730.
放置部700上升而代替升降銷220從機械臂210接收基板10，並下降而將基板10安放於夾盤200之上部。The placement section 700 rises to receive the substrate 10 from the robot arm 210 instead of the lift pin 220 and descends to place the substrate 10 on the upper portion of the chuck 200.
放置安放孔710以小於基板10之直徑形成於放置部700之內側。The placement mounting hole 710 is formed inside the placement portion 700 with a diameter smaller than that of the substrate 10.
夾盤安放部230作為從夾盤200凸出之結構插入於放置安放孔710，且上面與基板10之背面接觸而用靜電固定基板10。The chuck mounting portion 230 is inserted into the setting mounting hole 710 as a structure protruding from the chuck 200, and the upper surface thereof is in contact with the back surface of the substrate 10 to statically fix the substrate 10.
放置連動孔720形成於放置部700。The placement interlocking hole 720 is formed in the placement portion 700.
放置卡止部730以大於放置連動孔720之直徑大之直徑形成於連動部300之一側。The placement locking portion 730 is formed on one side of the linkage portion 300 with a larger diameter than the diameter of the placement linkage hole 720.
放置卡止部730可以透過連接有連動部300之直徑不同之區間而形成，或放置卡止部730可以凸出於連動部300之一側而形成。The placement locking portion 730 may be formed through sections having different diameters connected to the linking portion 300, or the placement locking portion 730 may be formed protruding from one side of the linking portion 300.
連動部300之一側區間可以小於放置部700之連動孔之直徑之直徑形成，在升降時，通過放置連動孔720，若卡止於放置卡止部730，則與連動部300連動而升降。One side section of the interlocking part 300 may be formed with a diameter smaller than the diameter of the interlocking hole of the placing part 700. When the interlocking hole 720 is placed during lifting, if the interlocking part 730 is locked, the interlocking part 300 is raised and lowered.
即，連動部300升降之一部分區間被解除與放置部700之連動，只有引導部500升降，當為了搬入或搬出基板10而需要升降放置部700時，放置部700與引導部500一同升降。In other words, the interlocking portion 300 is lifted and lifted, and only the guide portion 500 is raised and lowered. When the placement portion 700 is raised and lowered in order to carry in or out the substrate 10, the placement portion 700 is raised and lowered together with the guide portion 500.
如此，具有無需追加另外之結構，放置部700即可與引導部500連動而升降之優點，且具有處理基板10時能夠根據需求調節引導部500與基板10之間之間距之優點。In this way, there is an advantage that the placing portion 700 can move up and down in conjunction with the guide portion 500 without adding another structure, and also has an advantage that the distance between the guide portion 500 and the substrate 10 can be adjusted according to demand when processing the substrate 10.
10：基板 100：腔室 110：形成區域 120：處理區域 130：排出區域 200：夾盤 300：連動部 400：驅動部 500：引導部 600：限制部 700：放置部10: substrate 100: chamber 110: formation area 120: processing area 130: discharge area 200: chuck 300: interlocking portion 400: driving portion 500: guide portion 600: restricting portion 700: placing portion
圖1是示出本發明之引導部上升時之狀態之圖。 圖2是示出本發明之引導部下降時之狀態之圖。 圖3和圖4是示出驅動部之實施例之圖。 圖5是示出連動部之實施例之圖。 圖6和圖7是示出第一導向部和第二導向部之實施例之圖。 圖8至圖11是示出限制部之實施例之圖。 圖12是示出限制卡止部之實施例之圖。 圖13和圖14是示出放置部之實施例之圖。FIG. 1 is a diagram showing a state when the guide portion of the present invention is raised. FIG. 2 is a diagram showing a state when the guide portion of the present invention is lowered. 3 and 4 are diagrams showing an embodiment of the driving section. Fig. 5 is a diagram showing an embodiment of an interlocking portion. 6 and 7 are diagrams showing examples of the first guide portion and the second guide portion. 8 to 11 are diagrams showing an example of a restricting portion. FIG. 12 is a diagram showing an example of a restriction locking portion. 13 and 14 are diagrams showing an example of the placement portion.
Claims (9)
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| KR1020170137606A KR101856689B1 (en) | 2017-10-23 | 2017-10-23 | Substrate processing apparatus including an elevating induced part |
| ??10-2017-0137606 | 2017-10-23 |
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| JP2001267248A (en) * | 2000-03-15 | 2001-09-28 | Shibaura Mechatronics Corp | Semiconductor processor |
| JP2013089972A (en) * | 2011-10-19 | 2013-05-13 | Advanced Micro Fabrication Equipment Inc Shanghai | Inductive coupling plasma source design for plasma uniformity and efficiency enhancement |
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| KR101465766B1 (en) * | 2008-07-02 | 2014-12-01 | 주성엔지니어링(주) | Apparatus for treating substrate having substrate support frame |
| CN102355792B (en) * | 2011-10-19 | 2016-04-06 | 中微半导体设备(上海)有限公司 | Improve the inductively coupled plasma device of plasma uniformity and efficiency |
| JP6596362B2 (en) * | 2015-12-02 | 2019-10-23 | 東京エレクトロン株式会社 | A processing device for processing a workpiece in a decompressed space |
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| JP2001267248A (en) * | 2000-03-15 | 2001-09-28 | Shibaura Mechatronics Corp | Semiconductor processor |
| JP2013089972A (en) * | 2011-10-19 | 2013-05-13 | Advanced Micro Fabrication Equipment Inc Shanghai | Inductive coupling plasma source design for plasma uniformity and efficiency enhancement |
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