KR102114891B1 - Plasma processing apparatus - Google Patents

Abstract

The present invention relates to a plasma processing device. Specifically, according to one embodiment of the present invention the plasma processing device may be provided. The plasma processing device comprises: a chamber including a formation area in which plasma is formed, a processing area in which a substrate is processed with the plasma, and a discharge area where the plasma is discharged; a chuck having a seating unit so that the substrate is seated; an induction member inducing the plasma formed in the formation area to the processing area and including a lower portion with a predetermined diameter; and a vessel including a vessel wall having a diameter larger than the diameter of the lower portion of the induction member and extended in a vertical direction. When the substrate is mounted on the seating unit, the lower portion of the vessel and the chuck are in close contact with each other. The difference in etching ratio between the center and the edge of the substrate is reduced.

Description

Plasma processing equipment {PLASMA PROCESSING APPARATUS}

The present invention relates to a plasma processing apparatus.

In the process of processing the substrate, a plasma processing apparatus that performs work using plasma may be used. The process of processing the substrate includes etching, deposition, etc., and the present invention describes a process of processing the substrate based on etching. The etching may include at least one of physical etching and chemical etching. The processing apparatus for a substrate using such plasma converts the process gas into a plasma state by supplying the process gas into the chamber and reacting with a high-frequency current. The plasma can etch the substrate.

Meanwhile, while the plasma is etching the substrate, the flow velocity of the plasma may be different from the edge portion and the center portion of the substrate. In general, the flow rate of plasma at the edge of the substrate is fast, and the flow rate of plasma at the center of the substrate is slow. Due to the difference in the flow rate of the plasma, the edge portion of the substrate is treated with plasma more than the center portion of the substrate, so that the etching rate of the edge portion of the substrate is higher than that of the center portion of the substrate. The substrate may be etched non-uniformly due to a difference in etching ratio between the edge portion and the center portion of the substrate.

Accordingly, there is a need for a plasma processing apparatus capable of reducing the difference in etching ratio between the edge portion and the center portion of the substrate in order to prevent the substrate from being etched non-uniformly.

Embodiments of the present invention are invented in view of the above background, and to provide a plasma processing apparatus in which the difference in the etching ratio between the center and the edge of the substrate is reduced by reducing the speed of the plasma flow in the edge of the substrate.

According to an aspect of the present invention, a chamber including a formation region that is a region where plasma is formed, a processing region that is a region where a substrate is processed with the plasma, and an emission region that is a region where the plasma is discharged; A chuck having a seating portion for mounting the substrate; An induction member for guiding the plasma formed in the formation region to the processing region, and including a lower end having a predetermined diameter; And a vessel having a diameter larger than the diameter of the lower end portion of the guide member and extending in a vertical direction, wherein the vessel is in close contact with the lower end of the vessel and the chuck when the substrate is mounted on the seating portion. A plasma processing apparatus can be provided.

In addition, the induction member includes a tapered portion having a diameter that narrows toward the lower side, and the vessel wall has a diameter smaller than the diameter of the outer circumferential surface of the upper end portion of the tapered portion and having a diameter larger than the diameter of the outer circumferential surface of the lower portion of the tapered portion. The device can be provided.

In addition, the vessel is disposed so that the distance from the chuck to the upper end of the vessel is greater than the distance from the chuck to the lower end of the induction member to change the flow direction of plasma passing through the induction member, plasma treatment The device can be provided.

In addition, after processing the substrate further comprises a baffle formed with a plurality of baffle through holes for dispersing the flow of the plasma flowing toward the outside of the chamber, the baffle being disposed below the vessel, plasma processing The device can be provided.

In addition, the chuck includes a chuck body and a focus ring, and a recess is formed at an edge of the chuck body at a lower height than the inner portion of the chuck body, and the focus ring is seated on the recess, plasma processing apparatus Can be provided.

In addition, the vessel may be provided with a plasma processing apparatus in which the vessel wall is disposed in an area in the vertical direction above the focus ring.

Further, in the vessel, the distance between the virtual line extending vertically from the outer edge of the focus ring and the vessel wall is greater than the distance between the virtual line extending vertically from the inner edge of the focus ring and the vessel wall. A plasma processing apparatus, which is arranged to be large, can be provided.

In addition, the plasma processing apparatus may be provided in which the horizontal distance from the lower end of the induction member to the upper end of the vessel wall is greater than the vertical distance from the lower end of the induction member to the upper end of the vessel wall.

In addition, the vessel wall has a ring shape, the focus ring has a ring shape, the diameter of the inner peripheral surface of the focus ring is formed smaller than the diameter of the inner peripheral surface of the vessel wall, a plasma processing apparatus may be provided.

In addition, further comprising an elevating module capable of elevating the vessel with respect to the chuck, the elevating module elevates the vessel to mount or remove a substrate on the seating portion, and mounts the substrate mounted on the seating portion. A plasma processing apparatus, which is driven to lower the vessel for plasma processing, may be provided.

In addition, the baffle may be provided with a plasma processing apparatus that is supported by the vessel and moves up and down with the vessel.

Further, the elevating module may be provided with a plasma processing device that elevates to selectively engage the vessel to elevate the vessel.

In addition, the lifting module may include a plasma processing apparatus including an engaging portion inserted into a hole formed in the vessel to elevate the vessel.

In addition, the lifting module further includes a support bar forming a step with the engaging portion, and the lifting module elevates the vessel by elevating the step between the supporting bar and the engaging portion while being caught in the vessel. A plasma processing apparatus can be provided.

In addition, the vessel, connected to the lower end of the vessel wall, has a ring shape, a bridge member having an outer radius greater than the outer radius of the vessel wall; And a shadowing ring supported by the bridge member and elevated together with the bridge member and covering an edge of a substrate seated on the seating portion, a plasma processing apparatus may be provided.

In addition, the bridge member has a bridge mounting portion protruding outward from the outer circumferential surface, a first through hole is formed in the bridge mounting portion, and the shadow ring has a shadow mounting portion protruding outward from the outer circumferential surface, and the shadow mounting A second through hole may be formed in the portion, and the plasma processing apparatus may be provided such that the bridge member and the shadow ring are disposed such that the first through hole and the second through hole are disposed at positions corresponding to each other.

In addition, the vessel, coupled to the bridge mounting portion with the shadow mounting portion therebetween, further comprises a connecting member having a third through hole, the first through hole, the second through hole and the third through The hole may be provided with a plasma processing apparatus, wherein each center point is arranged to lie on the same vertical line.

In addition, the lifting module, the support bar; An engagement portion formed on one side of the support bar; A support ring supporting the support bar and surrounding the chuck; And a driving unit providing a driving force for elevating the support ring, wherein the diameter of the third through hole may be larger than the engaging portion and smaller than the supporting bar, and the lifting module may include the supporting bar A plasma processing apparatus for elevating the vessel by elevating in a state stuck in 3 through holes may be provided.

In addition, the lifting module, the support bar; An engagement portion formed on one side of the support bar; A support ring supporting the support bar and surrounding the chuck; And a driving unit providing a driving force for elevating the support ring, and a part of the outer circumferential surface of the engaging portion is lifted while being engaged with at least one of the first through hole, the second through hole, and the third through hole. A plasma processing apparatus for elevating the vessel can be provided.

In addition, the vessel having a diameter larger than the diameter of the lower end of the induction member; And an elevating module capable of elevating the vessel with respect to a chuck, wherein the elevating module closes the bottom of the vessel and the chuck by lowering the vessel when the substrate is mounted on the seat of the chuck, plasma treatment. The device can be provided.

According to embodiments of the present invention, since the speed of the plasma flow of the substrate edge portion is reduced, the etching ratio of the edge portion of the substrate is lowered, and thus the difference in the etching ratio between the center portion and the edge portion of the substrate is reduced.

1 is a cross-sectional view of a plasma processing apparatus according to an embodiment of the present invention including a cross-section of a vessel and a lift module cut along B-B 'of FIG. 4.
FIG. 2 is a cross-sectional view of the plasma processing apparatus including the cross-section of the vessel and the lifting module cut along B-B 'of FIG. 4 when the vessel of FIG. 1 descends.
3 is a view showing a plasma flow (PF).
4 is a perspective view of the vessel and the lifting module of FIG. 1.
5 is an exploded perspective view of the vessel of FIG. 4.
6 is an enlarged view of part A of FIG. 2.
7 is an enlarged view showing part A when the support bar of FIG. 2 is raised.
8 is an enlarged view showing a portion A when the vessel wall and the bridge portion of FIG. 2 are combined as one member.
9 is an enlarged view of a portion corresponding to part A of FIG. 2 of the plasma processing apparatus according to an example of the second embodiment of the present invention, and shows a state in which the engaging portion is inserted into the through hole and brought into contact.
10 is an enlarged view of a portion corresponding to part A of FIG. 2 of the plasma processing apparatus according to another example of the second embodiment of the present invention, showing a state in which the engaging portion is inserted into the through-hole and brought into contact.
11 is a bottom view of the vessel of FIG. 4.

Hereinafter, a specific embodiment for implementing the spirit of the present invention will be described in detail with reference to the drawings.

In addition, in the description of the present invention, when it is determined that detailed descriptions of related known configurations or functions may obscure the subject matter of the present invention, detailed descriptions thereof will be omitted.

Also, when a component is said to be 'connected', 'supported', 'supplied', 'fluid', or 'coupled' to another component, it may be directly connected, supported, supplied, flowed, or joined to other components. It may be understood that other components may exist in the middle.

The terms used herein are only used to describe specific embodiments and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise.

Further, terms including ordinal numbers such as first, second, and third may be used to describe various components, but the components are not limited by these terms. These terms are only used to distinguish one component from another.

As used herein, the meaning of “comprising” embodies certain properties, regions, integers, steps, actions, elements and / or components, and other specific properties, regions, integers, steps, actions, elements, components and / or groups It does not exclude the existence or addition of.

In addition, in the present specification, the expressions of the upper side, the lower side, etc. are described based on the city in the drawings, and it is revealed in advance that the direction of the corresponding object may be differently expressed. Meanwhile, the vertical direction of the present specification may be the vertical direction of FIG. 1.

Hereinafter, a specific configuration of the plasma processing apparatus 1 according to an embodiment of the present invention will be described with reference to the drawings.

Hereinafter, referring to FIGS. 1 and 2, the plasma processing apparatus 1 according to an embodiment of the present invention may receive a process gas from the outside and convert it into a plasma state. In addition, the substrate 10 may be treated with plasma to form a fine pattern on the substrate 10. The plasma processing apparatus 1 may include a chuck 20, a vessel assembly 30, a chamber 100, a pump 300, a baffle 400 and an induction member 800. The chamber 100 may include a chamber door 140 that provides a passage through which the substrate 10 is carried out. In addition, the chuck 20 may include a chuck body 200 and a focus ring 500, and the vessel assembly 30 may include a vessel 600 and a lifting module 700.

Meanwhile, the chamber 100 may provide a space in which process gas is converted into a plasma state by reacting with a high-frequency current. In addition, the chamber 100 may provide a space for processing plasma on the substrate 10. Inside the chamber 100, a processing region 120, which is a space where plasma can be processed, and a substrate 10, which are regions where plasma can be formed, are formed. The discharge area 130, which is a space where plasma is discharged to the pump 300 to be described later, may be formed. In addition, as shown in FIG. 3, inside the chamber 100, a plasma flow (Plasma Flow), which is a flow in which plasma flows from the forming region 110 to the discharge region 130 through the processing region 120, is referred to as PF. ) May be formed. In addition, the plasma may flow from inside the chamber 100 to the pump 300 disposed outside the chamber 100 along the plasma flow PF.

Referring to FIG. 3, the formation region 110 may be a region in which a process gas supplied from the outside of the chamber 100 is converted into plasma by a high-frequency current, thereby forming plasma. The formation region 110 may be an upper region inside the chamber 100 or an upper region of the induction member 800 to be described later.

The processing region 120 may be a region in which plasma moved from the formation region 110 processes the substrate 10 and the substrate 10 is etched. In addition, the processing region 120 may be a region adjacent to the substrate 10 when the substrate 10 is seated on the seating portion 210 to be described later, and may be a region lower than the forming region 110. The plasma in the processing region 120 may process the substrate 10 and include byproducts generated.

The discharge region 130 may be a region in which the plasma processing the substrate 10 in the treatment region 120 is discharged to the outside. Also, the discharge area 130 may be an area surrounding the processing area 120. The discharge area 130 may communicate with an exhaust passage (not shown) of the pump 300 disposed outside the chamber 100. The discharge area 130 may provide a space for the plasma processing the substrate 10 to be exhausted outside the chamber 100.

Meanwhile, the chamber 100 may include a chamber door 140 providing a passage through which the substrate 10 is carried out. In such a chamber door 140, the substrate 10 is brought into the chamber 100 from the outside of the chamber 100, or the substrate 10 is taken out of the chamber 100 from the inside of the chamber 100. Can provide a passage. In addition, the chamber door 140 may be provided to be opened and closed on one side of the chamber 100.

The chuck 20 supports the substrate 10 and allows the substrate 10 to be positioned in the processing region 120. The chuck 20 may include a chuck body 200 and a focus ring 500.

The chuck body 200 may support the focus ring 500. The chuck body 200 may be provided with a seating portion 210 that is a portion on which the substrate 10 is seated. The seating portion 210 may provide a portion for supporting the substrate 10, and may be provided on an upper inner side of the chuck body 200, that is, a region corresponding to the processing region 120. The substrate 10 carried into the interior of the chamber 100 through the chamber door 140 may be seated on the seating portion 210.

In addition, a recess 220 for seating the focus ring 500 may be formed at an edge portion of the chuck body 200. The focus ring 500 may be inserted into the recess 220. The recess 220 may be formed to a lower height than the upper surface of the inside of the chuck body 200 (the processing region 120 side). In other words, the recess 220 may be formed at the edge of the chuck body 200 at a lower height than the seating portion 210. In addition, a step may be formed between the recess 220 and the seating portion 210 due to a difference in height between the recess 220 and the seating portion 210.

The focus ring 500 may provide a portion where the vessel 600 is seated. The focus ring 500 may be seated on the recess 220. Also, the focus ring 500 may have a ring shape as an example.

This focus ring 500 can have a focus ring top surface 510 that can selectively contact the vessel 600. The width of the focus ring upper surface 510 may be formed larger than the width of the vessel upper surface 611. Here, the width may be a distance between the inner edge and the outer edge. In addition, when the vessel 600 is lowered toward the chuck 20 as shown in FIG. 2, the lower end of the vessel 600 is seated on the upper surface 510 of the focus ring, so that between the lower end of the vessel 600 and the chuck 20 Can be in close contact. In other words, the bottom of the vessel 600 and the focus ring 500 inserted into the recess 220 are in close contact, thereby preventing plasma from flowing between the bottom of the vessel 600 and the focus ring 500, and Etching of the upper surface 510 of the focus ring may be prevented. In addition, plasma that has not passed between the rear surface of the substrate 10 seated on the seating portion 210 and the upper surface of the seating portion 210 and between the lower portion of the vessel 600 and the top ring focusing surface 510 is processed. By staying in the region 120, the substrate 10 can be processed. In addition, the plasma of the processing region 120 flows over the top surface 611 of the vessel to the discharge region 130.

The pump 300 may discharge the plasma inside the chamber 100 to the outside of the chamber 100. By the pump 300, a plasma flow PF through which plasma can flow along the formation region 110, the processing region 120, and the discharge region 130 may be formed inside the chamber 100. . Also, the exhaust passage of the pump 300 may communicate with the discharge area 130. The plasma of the discharge area 130 may be discharged to the outside by passing through the baffle 400 provided in the discharge area 130 by the pump 300.

After processing the substrate 10, the baffle 400 may disperse the flow of plasma flowing from the processing region 120 toward the outside of the chamber 100. Also, the baffle 400 may be disposed below the vessel 600. The baffle 400 may be a plate having a ring shape. In addition, the baffle 400 may be fixedly installed in the chamber 100, but may be supported by the vessel 600 and configured to move up and down together with the vessel 600.

A baffle through hole 410 may be formed in the baffle 400. A plurality of baffle through-holes 410 may be formed in the baffle 400, and the plurality of baffle through-holes 410 may disperse plasma flow toward the pump 300. Therefore, the plasma flowing from the processing region 120 to the discharge region 130 may be dispersed and flow while passing through the plurality of baffle through holes 410. The through hole 410 may have a slit shape extending along the radial direction from the center of the baffle 400.

3 and 4, the vessel 600 may lower an etch rate of plasma passing through an edge portion of the substrate 10 and change a flow direction of plasma passing through the induction member 800. In other words, the vessel 600 may extend from a top surface of the chuck 20 to a predetermined height to surround and cover the seating portion 210. At least a portion of the vessel 600 is formed of a cover member having a cylindrical shape surrounding the seating portion 210 and may be configured to change the flow direction of the plasma.

The vessel 600 may be elevated by the lifting module 700 so that the substrate 10 is seated on the seating portion 210 of the chamber 100. In other words, the vessel 600 may be elevated and spaced apart from the chuck body 200 when the substrate 10 is brought into the chamber 100 as shown in FIG. 1. When the vessel 600 is raised, the substrate 10 brought into the chamber 100 may pass through the spaced space and be seated on the seating portion 210. In addition, the vessel 600, as shown in Figure 2, when the substrate 10 is mounted on the seating portion 210, descends toward the substrate 10, the lower end of the vessel 600 focus ring upper surface 510 By being seated on, the bottom of the vessel 600 and the chuck body 200 may be in close contact. Thus, plasma can be prevented from flowing through between the lower end of the vessel 600 and the upper surface of the chuck 20. The plasma of the processing region 120 that has not passed between the lower end of the vessel 600 and the upper surface of the chuck 20 flows over the upper surface of the vessel 611 and into the discharge region 130.

Vessel 600 may include a vessel wall 610, a bridge member 620, a shadow ring 630, and a connecting member 640. Here, the shadow ring 630 and / or the connecting member 640 may be included or removed depending on the plasma processing environment.

1 and 3 to 6, the vessel wall 610 may lower the etching ratio of plasma passing through the edge portion of the substrate 10. In other words, in the plasma passing through the edge portion of the substrate 10, the flow direction may be changed from the horizontal direction to the vertical direction (up and down direction) by the vessel wall 610, and the flow velocity may be lowered by the vessel wall 610. .

In addition, the vessel wall 610 may be, for example, a ring shape, and the diameter of the inner peripheral surface of the vessel wall 610 may be formed larger than the diameter of the inner peripheral surface of the focus ring 500. That is, the vessel wall 610 may be placed in an area extending vertically upward from the focus ring 500. This vessel wall 610 can have a vessel top surface 611 provided at the top. The width of the top surface of the vessel 611 (t1 in FIG. 6) may be smaller than the width of the focus ring top surface 510 (t2 in FIG. 6). In addition, the vessel top surface 611 is an imaginary surface I (see FIG. 1) that traverses the center point of the carry-in / out area S (see FIG. 1) of the substrate 10 provided when the vessel 600 is raised. )).

In addition, when the vessel 600 is seated on the chuck 20, the vessel wall 610 has a horizontal distance (L1 in FIG. 6) from the lower end of the induction member 800 to the upper end of the vessel wall 610. 800) from the lower end to the upper end of the vessel wall 610 (L2 in FIG. 6).

In addition, the vessel wall 610 extends in the vertical direction, and the inner circumferential surface is formed in a circle having a predetermined diameter. The inner circumferential surface of the vessel wall 610 may have a larger diameter than the inner circumferential surface of the lower end of the induction member 800 to prevent interference with the induction member 800.

In addition, the vessel 600 has a distance (d1 in FIG. 6) between an imaginary line extending upward and downward from the outer edge of the focus ring 500 and the outer peripheral surface of the vessel wall 610 from the inner edge of the focus ring 500. It is arranged to be greater than a distance (d2 in FIG. 6) between the virtual line extending in the vertical direction and the inner peripheral surface of the vessel wall 610. In other words, the vessel 600 is disposed such that the vessel wall 610 is closer to the inner edge of the focus ring 500 than the outer edge of the focus ring 500.

Meanwhile, referring to FIGS. 3 to 6, the vessel 600 has a distance between the virtual line extending from the upper surface 510 of the focusing ring to the left and right and the upper surface of the vessel 611 (h2 in FIG. 6). It may be disposed to be greater than the distance between the virtual line extending from the surface 510 to the left and right and the guide 810 (h1 in FIG. 6). In other words, the vessel 600 is disposed so that the distance from the chuck 20 to the upper end of the vessel 600 is greater than the distance from the chuck 20 to the lower end of the induction member 800 to guide the induction member 800. The flow direction of the plasma that has passed can be changed. In addition, the vessel 600 may have a larger diameter than the diameter of the lower end of the induction member 800.

The bridge member 620 may connect the vessel wall 610 and the shadow ring 630. The bridge member 620 may have a ring shape having a predetermined width. Also, the bridge member 620 may be connected to the bottom surface of the vessel wall 610. The bridge member 620 may be formed with a bridge mounting portion 621 that can be connected to the connecting member 640.

The bridge mounting portion 621 may provide a portion where the bridge member 620 and the connection member 640 to be described later are coupled. The bridge mounting portion 621 may be formed to protrude from the outer circumferential surface of the bridge member 620. In addition, a plurality of bridge mounting portions 621 may be formed, and the plurality of bridge mounting portions 621 may be spaced apart from each other in the circumferential direction of the outer circumferential surface of the bridge member 620. A first through hole 621a into which the engaging portion 711 to be described later can be inserted may be formed in the bridge mounting portion 621. In addition, referring to FIG. 11, a bridge groove 621b into which the shadow holder 631 can be inserted may be formed in the bridge holder 621. In other words, the shadow member 631 is inserted into and seated inside the bridge groove 621b formed on the lower surface of the bridge holder 621 so that the bridge member 620 and the shadow ring 630 may be coupled.

The shadow ring 630 may cover the edge of the substrate 10 seated on the seating portion 210. The shadow ring 630 may support the bridge member 620 seated on its upper surface and may be elevated together according to the elevation of the bridge member 620. In addition, the shadow ring 630 may prevent plasma from flowing between the shadow ring 630 and the focus ring 500. In other words, as shown in FIGS. 3, 5, and 6, the shadow ring 630 is in close contact with the focus ring 500 when descending by the elevating module 700 so that the shadow ring 630 and the focus ring 500 ) Can prevent the plasma from flowing. In the shadow ring 630, a shadow holder 631 may be formed to provide a portion supported by the connection member 640.

The shadow mounting portion 631 may provide a portion where the shadow ring 630 is supported by the connecting member 640. The shadow mounting portion 631 may protrude from the outer circumferential surface of the shadow ring 630. In addition, a plurality of shadow mounting portions 631 may be formed, and may be formed on different outer circumferential surfaces of the shadow ring 630. A second through hole 631a into which the engagement portion 711 can be inserted may be formed in the shadow mounting portion 631. The diameter of the second through hole 631a may be the same as the diameter of the first through hole 621a.

The connecting member 640 may prevent the shadow ring 630 from being detached from the bridge member 620. In other words, the connecting member 640 may maintain the shadow ring 630 within the bridge member 620 by combining the bridge holder 621 with the shadow holder 631 interposed therebetween. The connecting member 640 may be provided in plural in order to connect the plurality of bridge mounting portions 621 and the plurality of shadow mounting portions 631. A third through hole 641a into which the engagement portion 711 can be inserted may be formed in the connecting member 640. The diameter of the third through hole 641a may be larger than the diameter of the engagement portion 711 and smaller than the diameter of the support bar 710. In addition, the diameters of the third through holes 641a may be formed to be the same as the diameters of the first through holes 621a and the second through holes 631a.

At least two or more of the first through hole 621a, the second through hole 631a, and the third through hole 641a correspond to the bridge member 620, the shadow ring 630, and the connection member 640 It can be arranged to be in position. For example, the bridge member 620 and the shadow ring 630 may be disposed such that the first through-hole 621a and the second through-hole 631a are positioned at positions corresponding to each other. In addition, the bridge member 620, the shadow ring 630, and the connecting member 640 have a center point of any one of the first through hole 621a, the second through hole 631a, and the third through hole 641a. It can be positioned so as to lie on the same vertical line as at least two other center points.

On the other hand, referring back to FIG. 4, the lifting module 700 plasmas the substrate mounted on the seating unit 210 or elevates the vessel 600 to mount or remove the substrate 10 on the seating unit 210. The vessel 600 may be lowered for processing. In other words, the lifting module 700 may elevate the vessel 600 to mount or remove the substrate 10 on the seating portion 210, and lower the vessel 600 prior to plasma treatment to lower the vessel 600. ) May be driven to fix the substrate 10 mounted on the seating portion 210. In addition, the lifting module 700 may be fixed to the vessel 600 in order to elevate the vessel 600, or may be elevated to selectively engage the vessel 600.

The lifting module 700 may include a support bar 710, an engaging portion 711, a support ring 720 and a driving portion 730.

4, 6 and 7, the support bar 710 may support the vessel 600. A plurality of support bars 710 may be provided, and the plurality of support bars 710 may support a plurality of connection members 640. In addition, the support bar 710 may be connected to the support ring 720, and may be elevated according to the elevation of the support ring 720. At this time, the upper end of the support bar 710 may form a step with the lower end of the engagement portion 711, and the elevation module 700 has a step between the support bar 710 and the engagement portion 711, the connecting member 640 ) To lift the vessel 600 by elevating it. For example, the diameter of the support bar 710 may be larger than the diameter of the engaging portion 711, and the diameter of the support bar 710 may be formed larger than the diameter of the third through hole 641a. Accordingly, when the engagement portion 711 is inserted into the third through hole 641a and the support bar 710 moves up and down, the connecting member 640 is engaged with the step between the support bar 710 and the engagement portion 711. Vessel 600 may be elevated.

4, 7 and 9, the engaging portion 711 is provided at the end of the support bar 710. In addition, a plurality of engaging portions 711 may be provided, and the plurality of engaging portions 711 may have a shape protruding upward from an upper end of the plurality of supporting bars 710. The engaging portion 711 may move in a direction that is inserted into at least one of the holes 621a, 631a, and 641a formed in the vessel 600 to elevate the vessel 600. For example, when the support bar 710 is not elevated, the engagement portion 711 is inserted only into the second through hole 631a and the third through hole 641a, and when the support bar 710 is elevated, the second through hole The holes 631a and the third through holes 641a may be inserted into the first through holes 621a.

The engaging portion 711 may have a column shape. In addition, by a difference between the diameter of the lower end of the engaging portion 711 and the diameter of the upper end of the supporting bar 710, a step may be formed between the engaging portion 711 and the supporting bar 710, and the engaging portion 711 ) And the support bar 710 may cause the support bar 710 to rise and contact the lower surface of the connecting member 640. Therefore, when the support bar 710 rises, the step 600 between the engagement portion 711 and the support bar 710 engages the connecting member 640, so that the vessel 600 can be elevated together with the support bar 710.

The diameter of the upper end of the engagement portion 711 may be smaller than the diameter of the holes 621a, 631a, 641a, and smaller than the diameter of the support bar 710. For example, the diameter of the upper end of the engagement portion 711 may be smaller than the diameters of the first through hole 621a, the second through hole 631a, and the third through hole 641a. As a more detailed example, at least a portion of the engagement portion 711 may have a tapered shape that decreases in diameter as it extends to the upper end portion. Therefore, when the support bar 710 rises, the engagement portion 711 may be inserted toward the first through hole 621a without being caught by the third through hole 641a.

The support ring 720 may provide a space into which the chuck body 200 can be inserted. For example, the support ring 720 may have a ring shape in which a hollow is formed to surround the circumferential surface of the chuck body 200. In addition, the support ring 720 may support the lower end of the support bar 710 and may be connected to the driving unit 730.

The driving unit 730 may provide driving force for elevating the vessel 600. In other words, the driving unit 730 may elevate the support bar 710 and the support ring 720, thereby lifting the vessel 600 supported on the support bar 710. For example, the driving unit 730 may be a piston-type actuator.

Referring back to FIG. 3, the induction member 800 may induce plasma so that the plasma formed in the formation region 110 flows into the processing region 120. The induction member 800 may include a guide portion 810 and a taper portion 820.

The guide portion 810 may extend downward from the lower end of the tapered portion 820. The guide unit 810 may guide the plasma passing through the taper unit 820 to the processing region. The diameter of the outer peripheral surface of the lower end of the guide portion 810 may be smaller than the diameter of the vessel 600, and may have a circular shape.

The tapered portion 820 may induce plasma formed in the formation region 110 to the processing region 120. The tapered portion 820 may have a shape in which a diameter becomes narrower toward a lower side in order to collect plasma and increase the density of the plasma. In addition, the diameter of the upper portion of the tapered portion 820 may be larger than the diameter of the vessel 600, and the diameter of the lower portion of the tapered portion 820 may be smaller than the diameter of the vessel 600. The tapered portion 820 may be disposed above the guide portion 810.

Hereinafter, the operation and effects of the plasma processing apparatus 1 having the above-described configuration will be described.

1 to 8, the user may raise the vessel 600 by driving the lifting module 700 to bring the substrate 10 into the chamber 100. At this time, the step between the engagement portion 711 and the support bar 710 is engaged with the connecting member 640, the vessel 600 may be raised by the lifting module 700. When the vessel 600 is raised, the substrate 10 may be seated on the seating portion 210 of the chuck body 200. When the substrate 10 is seated on the seating portion 210, the lifting module 700 may be driven to lower the vessel 600.

While the vessel 600 is lowered by the driving unit 730, the step between the engaging portion 711 and the support bar 710 is lowered while being engaged with the connecting member 640 so that the vessel 600 is the focus ring 500 Can be seated on. In addition, the driving unit 730, when the vessel 600 is seated on the focus ring 500, the driving unit so that the engagement between the step between the engaging portion 711 and the support bar 710 and the connecting member 640 can be released 730 may further lower the engaging portion 711 to a predetermined distance or less. At this time, the engagement portion 711 may be lowered so as not to be completely separated from the holes 621a, 631a, and 641a formed in the vessel 600. For example, the driving unit 730 may lower the engaging portion 711 to a predetermined distance or less so that one end of the engaging portion 711 does not deviate from the second through hole 631a and the third through hole 641a. have.

As described above, the engaging portion 711 can be prevented from being misaligned by guiding the movement of the vessel 600 by raising or lowering it so as not to deviate from the holes 621a, 631a, and 641a formed in the vessel 600. In addition, the engaging portion 711 prevents the relative position of the vessel 600 relative to the substrate 10 from being changed, thereby maintaining the alignment, so that the plasma can be processed at a certain position. In addition, when the vessel 600 is lowered, the shadow ring 630 is seated on the edge of the substrate 10 and the upper surface 510 of the focus ring, so that the shadow ring 630 and the edge of the substrate 10 and the shadow ring ( Plasma flow between the 630 and the focus ring 500 may be prevented. In addition, when the vessel 600 is seated on the top surface 510 of the focus ring, the support bar 710 does not support the vessel 600 and is fully focused by the load of the vessel 600 and the bottom of the vessel 600 and the focus ring. The upper surface 510 can be firmly and stably adhered.

On the other hand, the user can supply a process gas from the outside to the chamber 100, and apply a high frequency current. In the formation region 110, the process gas may be converted into a plasma state by reacting with a high frequency current. The plasma may flow to the processing region 120 along the movement path D to process the substrate 10. The plasma treated substrate 10 can flow over the vessel top surface 611 and into the baffle 400. Plasma may be distributed in various flows while passing through the baffle through-hole 410 of the baffle 400 and flow to the discharge region 130. The plasma flow PF flowing along the formation region 110, the treatment region 120, and the discharge region 130 may be guided by the pump 300 and discharged out of the chamber 100.

The plasma processing apparatus 1 has an effect of reducing the difference in the etching ratio between the center portion and the edge portion of the substrate 10 because the etch rate of the edge portion of the substrate 10 is lowered because the velocity of the plasma flow at the edge portion of the substrate 10 is reduced. .

Meanwhile, in the present specification, the vessel wall 610 and the bridge member 620 are described as two different members, but this is only an example, and as shown in FIG. 8, the vessel wall 610 and the bridge member 620 It can be combined into one member.

Meanwhile, in addition to this configuration, a second embodiment of the present invention will be described with reference to FIGS. 9 and 10 further. In describing the second embodiment, differences in comparison with the above-described embodiment are mainly described, and the same description and reference numerals refer to the above-described embodiment.

According to the second embodiment of the present invention, in the vessel 600, the surface forming the holes 621a, 631a, and 641a and the circumferential surface of the engaging portion 711 contact the vessel 600 so that the lifting module 700 ). In this case, the lifting module 700 may be configured such that the upper end of the support bar 710 does not contact the vessel 600. In addition, for contact between the surface forming the holes 621a, 631a, and 641a in the vessel 600 and the circumferential surface of the engaging portion 711, any of the holes 621a, 631a, 641a and the engaging portion 711 One may have a tapered shape that decreases in diameter from the lower end to the upper end.

For example, as shown in FIG. 9, the engagement portion 711 may have a tapered shape that decreases in diameter from the lower end to the upper end. In this case, the diameter of at least one of the holes 621a, 631a, and 641a formed in the vessel 600 may be smaller than the diameter of a portion of the outer circumferential surface of the engagement portion 711.

As another example, at least one or more of the holes 621a, 631a, and 641a formed in the vessel 600 as shown in FIG. 10 may have a tapered shape that decreases in diameter from the lower end to the upper end. In this case, the diameter of the engaging portion 711 may be constant while extending in the vertical direction.

According to the above examples, when the plurality of engaging portions 711 raise the vessel 600, due to the length difference of the support bar 710, the load of the vessel 600 or the tilting of the support ring 720, etc. The plurality of engaging portions 711 may pass through the holes 621a, 631a, and 641a formed in the vessel 600 at different heights, so that the vessel 600 may not move horizontally. In other words, the vessel 600 may be inclined and lifted while being supported by the engaging portion 711 having different deviations in the vertical direction.

The predetermined height difference between the plurality of engagement portions 711 may occur due to a difference in the length of the engagement portion 711 as well as a difference in length of the support bar 710 or inclination of the support ring 720. Therefore, when the plurality of engaging portions 711 are elevated by the driving unit 730, a portion of the outer circumferential surface of the engaging portion 711 is formed in the vessel 600 so as to be elevated while supporting the vessel 600 horizontally. It may be formed to be in contact with at least one of (621a, 631a, 641a). For example, some of the outer circumferential surfaces of the plurality of engagement portions 711 may be formed to contact and engage the first through hole 621a formed in the vessel 600.

Here, as the engagement portion 711 contacts and engages the first through hole 621a, as shown in FIG. 9, a part of the outer circumferential surface of the engagement portion 711 comes into contact with the edge of the first through hole 621a. In addition to being bitten, as shown in FIG. 10, some of the outer circumferential surfaces of the engaging portion 711 also contact and engage with the inner circumferential surfaces of the first through holes 621a.

Accordingly, when the vessel 600 is raised, a part of the outer circumferential surface of any one of the plurality of engagement portions 711 may first come into contact with the first through hole 621a to engage. In addition, if the driving unit 730 continues to rise in a state where some of the outer circumferential surfaces are engaged with the first through holes 621a, a portion of the remaining outer circumferential surfaces of the plurality of engaging portions 711 may be partially formed through the first through holes ( 621a). As described above, even if any one of the plurality of engaging portions 711 first engages with the first through hole 621a, the rest of the plurality of engaging portions 711 is the first through hole 621a. Since they are sequentially engaged, the vessel 600 can be raised and lowered with the same height deviation. In addition, when a part of the outer circumferential surface of the engaging portion 711 contacts and engages the first through hole 621a, the support bar 710 may be spaced apart from the connecting member 640 by a predetermined distance. Therefore, even if the step between the engaging portion 711 and the support bar 710 is not engaged with the connecting member 640, a portion of the outer circumferential surface of the engaging portion 711 is engaged with the first through hole 621a, so that the vessel 600 ) May be elevated by the driving unit 730.

In more detail, the engagement portion 711 may rise inside of at least some of the holes 621a, 631a, and 641a formed in the vessel 600, and at least one of the holes 621a, 631a, and 641a formed in the vessel 600 You can engage one. As a more detailed example, when the engaging portion 711 rises inside the holes 621a, 631a, and 641a formed in the vessel 600 by the driving unit 730, as shown in FIGS. 9 and 10, a plurality of systems A portion of the outer circumferential surface of any one of the haptic portions 711 may first engage the first through hole 621a. In addition, in a state where some of the outer peripheral surfaces are first engaged with the first through hole 621a, the driving unit 730 continues to rise, so that some of the remaining outer peripheral surfaces of the plurality of engaging portions 711 also pass through the first. It may be sequentially engaged with the hole (621a). As such, the step between the engaging portion 711 and the support bar 710 is not engaged with the connecting member 640, and a part of the outer circumferential surface of the engaging portion 711 is engaged with the first through hole 621a, thereby forming a plurality of systems. Even if they have different heights from each other, the abutment portion 711 can elevate the vessel 600 with the same deviation.

Although the embodiments of the present invention have been described above as specific embodiments, these are merely examples, and the present invention is not limited thereto, and should be interpreted as having the broadest scope according to the basic idea disclosed herein. Those skilled in the art may combine / replace the disclosed embodiments to implement patterns in an untimely manner, but this is also within the scope of the present invention. In addition, those skilled in the art can easily change or modify the disclosed embodiments based on the present specification, and it is obvious that such changes or modifications fall within the scope of the present invention.

1: Plasma processing apparatus 10: Substrate
20: Chuck 30: Vessel assembly
100: chamber 110: formation area
120: treatment area 130: discharge area
140: chamber door 200: chuck body
210: seating portion 220: recess
300: pump 400: baffle
410: baffle through-hole 500: focus ring
510: Focus ring top surface 600: Vessel
610: Vessel wall 611: Vessel top surface
620: bridge member 621: bridge mounting portion
621a: First through hole 621b: Bridge groove
630: shadow ring 631: shadow mount
631a: Second through hole 640: Connecting member
641a: Third through hole 700: lifting module
710: support bar 711: engaging portion
720: support ring 730: drive unit
800: induction member 810: guide
820: taper

Claims (24)

A chamber including a formation region which is a region where plasma is formed, a processing region which is a region where the substrate is processed with the plasma, and an emission region which is a region where the plasma is discharged;
A chuck having a seating portion for mounting the substrate;
An induction member for guiding the plasma formed in the formation region to the processing region, and including a lower end having a predetermined diameter; And
It includes a vessel having a diameter larger than the diameter of the lower portion of the induction member and including a vessel wall extending in the vertical direction,
When the substrate is mounted on the seating portion, the bottom of the vessel and the chuck are in close contact,
The vessel is arranged such that the distance from the chuck to the upper end of the vessel is greater than the distance from the chuck to the lower end of the guide member to change the flow direction of the plasma passing through the guide member.
Plasma processing device. According to claim 1,
The induction member includes a tapered portion having a diameter that narrows toward the lower side,
The vessel wall has a diameter smaller than the diameter of the outer circumferential surface of the upper end portion of the tapered portion and larger than the diameter of the outer circumferential surface of the lower portion of the tapered portion,
Plasma processing device. delete According to claim 1,
After processing the substrate further comprises a baffle formed with a plurality of baffle through holes for dispersing the flow of the plasma flowing toward the outside of the chamber,
The baffle is disposed below the vessel,
Plasma processing device. According to claim 1,
The chuck includes a chuck body and a focus ring,
A recess is formed at an edge portion of the chuck body at a lower height than the inner portion of the chuck body,
The focus ring is seated on the recess,
Plasma processing device. The method of claim 5,
The vessel, the vessel wall is disposed in the upper vertical area of the focus ring,
Plasma processing device. A chamber including a formation region which is a region where plasma is formed, a processing region which is a region where the substrate is processed with the plasma, and an emission region which is a region where the plasma is discharged;
A chuck including a seating portion and a focus ring for seating the substrate;
It includes a vessel including a vessel wall having a predetermined diameter and extending in the vertical direction to change the flow direction of the plasma,
When the substrate is mounted on the seating portion, the bottom of the vessel and the chuck are in close contact,
The vessel is such that the distance between the virtual line extending vertically from the outer edge of the focus ring and the vessel wall is greater than the distance between the virtual line extending vertically from the inner edge of the focus ring and the vessel wall. Posted,
Plasma processing device. A chamber including a formation region which is a region where plasma is formed, a processing region which is a region where the substrate is processed with the plasma, and an emission region which is a region where the plasma is discharged;
A chuck having a seating portion for mounting the substrate;
An induction member for guiding the plasma formed in the formation region to the processing region, and including a lower end having a predetermined diameter; And
It includes a vessel having a diameter larger than the diameter of the lower portion of the induction member and including a vessel wall extending in the vertical direction,
When the substrate is mounted on the seating portion, the bottom of the vessel and the chuck are in close contact,
The vessel wall is arranged such that the horizontal distance from the lower end of the guide member to the upper end of the vessel wall is greater than the vertical distance from the lower end of the guide member to the upper end of the vessel wall.
Plasma processing device. The method of claim 5,
The vessel wall has a ring shape,
The focus ring has a ring shape,
The diameter of the inner peripheral surface of the focus ring is formed smaller than the diameter of the inner peripheral surface of the vessel wall,
Plasma processing device. The method of claim 4,
And further comprising an elevating module capable of elevating the vessel with respect to the chuck,
The lifting module is driven to elevate the vessel to mount or remove a substrate on the seating portion, and to lower the vessel to plasma-process the substrate mounted on the seating portion,
Plasma processing device. The method of claim 10,
The baffle is supported by the vessel and lifts together with the vessel.
Plasma processing device. The method of claim 10,
The lifting module elevates to selectively engage the vessel to elevate the vessel,
Plasma processing device. A chamber including a formation region which is a region where plasma is formed, a processing region which is a region where the substrate is processed with the plasma, and an emission region which is a region where the plasma is discharged;
A chuck having a seating portion for mounting the substrate;
A vessel having a predetermined diameter to change the flow direction of the plasma; And
And an elevating module capable of elevating the vessel with respect to the chuck,
When the substrate is mounted on the seating portion, the bottom of the vessel and the chuck are in close contact,
The lifting module is driven to elevate the vessel to mount or remove a substrate on the seating portion, and to lower the vessel to plasma-process the substrate mounted on the seating portion,
The lifting module includes an engaging portion inserted into a hole formed in the vessel to elevate the vessel.
Plasma processing device. The method of claim 13,
The lifting module further includes a support bar forming a step with the engaging portion,
The elevating module elevates the vessel by elevating the step between the support bar and the engaging portion while hanging on the vessel,
Plasma processing device. A chamber including a formation region which is a region where plasma is formed, a processing region which is a region where the substrate is processed with the plasma, and an emission region which is a region where the plasma is discharged;
A chuck having a seating portion for mounting the substrate;
A vessel having a predetermined diameter to change a flow direction of the plasma and including a vessel wall extending in the vertical direction; And
And an elevating module capable of elevating the vessel with respect to the chuck,
When the substrate is mounted on the seating portion, the bottom of the vessel and the chuck are in close contact,
The lifting module is driven to elevate the vessel to mount or remove a substrate on the seating portion, and to lower the vessel to plasma-process the substrate mounted on the seating portion,
The vessel,
A bridge member connected to a lower end of the vessel wall, having a ring shape, and having an outer radius greater than an outer radius of the vessel wall; And
A shadow ring supported by the bridge member and elevated with the bridge member, and further comprising a shadow ring covering an edge of the substrate seated on the seat,
Plasma processing device. The method of claim 15,
The bridge member has a bridge mounting portion protruding outward from its outer circumferential surface, and a first through hole is formed in the bridge mounting portion,
The shadow ring has a shadow mounting portion protruding outward from its outer circumferential surface, and a second through hole is formed in the shadow mounting portion,
The bridge member and the shadow ring are disposed such that the first through hole and the second through hole are placed at positions corresponding to each other,
Plasma processing device. The method of claim 16,
The vessel,
Further comprising a connecting member having a third through-hole, coupled to the bridge mounting portion with the shadow mounting portion therebetween,
The first through-hole, the second through-hole and the third through-hole are arranged such that each center point lies on the same vertical line.
Plasma processing device. The method of claim 17,
The lifting module,
Support bar;
An engagement portion formed on one side of the support bar;
A support ring supporting the support bar and surrounding the chuck; And
It includes a driving unit for providing a driving force for lifting the support ring,
The diameter of the third through hole may be larger than the engaging portion and smaller than the support bar,
The elevating module elevates the vessel by elevating the support bar while being caught in the third through hole.
Plasma processing device. The method of claim 17,
The lifting module,
Support bar;
An engagement portion formed on one side of the support bar;
A support ring supporting the support bar and surrounding the chuck; And
It includes a driving unit for providing a driving force for lifting the support ring,
A part of the outer peripheral surface of the engagement portion elevates the vessel by elevating while engaging with at least one of the first through hole, the second through hole, and the third through hole,
Plasma processing device. A vessel having a diameter larger than the diameter of the lower end of the induction member; And
It includes a lifting module capable of lifting the vessel with respect to the chuck,
The lifting module closes the bottom of the vessel and the chuck by lowering the vessel when the substrate is mounted on the seat of the chuck,
The vessel is arranged such that the distance from the chuck to the upper end of the vessel is greater than the distance from the chuck to the lower end of the guide member to change the flow direction of the plasma passing through the guide member.
Vessel assembly. A vessel having a predetermined diameter to change a flow direction of the plasma and including a vessel wall extending in the vertical direction; And
An elevating module capable of elevating the vessel with respect to a chuck including a focus ring,
The lifting module closes the bottom of the vessel and the chuck by lowering the vessel when the substrate is mounted on the seat of the chuck,
The vessel is such that the distance between the virtual line extending vertically from the outer edge of the focus ring and the vessel wall is greater than the distance between the virtual line extending vertically from the inner edge of the focus ring and the vessel wall. Posted,
Vessel assembly. A vessel having a diameter larger than the diameter of the lower portion of the induction member and including a vessel wall extending in the vertical direction; And
It includes a lifting module capable of lifting the vessel with respect to the chuck,
The lifting module closes the bottom of the vessel and the chuck by lowering the vessel when the substrate is mounted on the seat of the chuck,
The vessel wall is arranged such that the horizontal distance from the lower end of the guide member to the upper end of the vessel wall is greater than the vertical distance from the lower end of the guide member to the upper end of the vessel wall.
Vessel assembly. A vessel having a predetermined diameter to change the flow direction of the plasma; And
It includes a lifting module capable of lifting the vessel with respect to the chuck,
The lifting module closes the bottom of the vessel and the chuck by lowering the vessel when the substrate is mounted on the seat of the chuck,
The lifting module includes an engaging portion inserted into a hole formed in the vessel to elevate the vessel.
Vessel assembly. A vessel having a diameter larger than the diameter of the lower portion of the induction member and including a vessel wall extending in the vertical direction; And
It includes a lifting module capable of lifting the vessel with respect to the chuck,
The lifting module closes the bottom of the vessel and the chuck by lowering the vessel when the substrate is mounted on the seat of the chuck,
The vessel,
A bridge member connected to a lower end of the vessel wall, having a ring shape, and having an outer radius greater than an outer radius of the vessel wall; And
A shadow ring supported by the bridge member and elevated with the bridge member, and further comprising a shadow ring covering an edge of the substrate seated on the seat,
Vessel assembly.

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