TWI471961B - Baffle, substrate supporting apparatus and plasma processing apparatus and plasma processing method - Google Patents

Description

Baffle, substrate support device, plasma processing device, and plasma processing method

The present invention relates to a baffle, a substrate supporting device, and a plasma processing device and method, and more particularly to a baffle, a substrate supporting device, and a plasma processing device that enable a reaction gas in a central region and a peripheral region of a bottom surface of a substrate The residence time is the same, and the leakage of the reaction gas and the plasma under the substrate is avoided, thereby improving the etch rate and the etch uniformity of the substrate.

Semiconductor components and flat display devices are generally performed by a plurality of unit processes such as a deposition process, a photolithography process, an etching process, a cleaning process, and the like in a concentrated or repeated manner. be made of.

In particular, the deposition process and the etching process are all performed on the entire surface of the substrate, so that particles generated during the deposition process and the etching process remain on the bottom surface of the substrate. These particles may cause the substrate to bend or make it difficult to align the substrate in subsequent processes. With regard to a method of removing particles remaining on the bottom surface of a substrate, a known method is to remove wet cleaning of particles on the surface of the substrate by dipping the substrate into a solution or a rinsing agent and etching the substrate by using plasma. The surface is used to remove dry cleaning of the particles.

Wet cleaning is effective for removing particles remaining on the surface of the substrate. However, due to the large amount of chemicals used, it is very difficult to manage the process and the facility costs increase. In addition, since the running time is increased, the productivity is lowered. The dry cleaning design uses plasma to remove particles located on the bottom and edges of the substrate. The advantage of dry cleaning is that it compensates for the drawbacks of wet cleaning. A plasma processing apparatus for dry cleaning includes electrodes and lower electrodes that are spaced apart from each other in a closed reaction chamber. A substrate such as a semiconductor wafer is disposed between the upper electrode and the lower electrode. A reaction unit for supporting the substrate, a gas injection unit for injecting a reaction gas toward the bottom surface of the substrate, and an exhaust unit for discharging by-products generated in the reaction chamber are provided in the reaction chamber. The inside of the reaction chamber is highly vacuumed, and the gas injection unit injects gas toward the bottom surface of the substrate. As high frequency power is applied between the upper electrode and the lower electrode, the injected reaction gas becomes a plasma. Excess material (ie, particles) on the bottom surface of the substrate is removed by the plasma.

In the related art, a gap of several millimeters should be maintained between the substrate and the upper electrode to prevent plasma from being generated on the top surface of the substrate, and thus the substrate is placed around the central region of the high-density plasma forming region between the upper electrode and the lower electrode. Within the sheath region. The edge sheath region is a region where the strength of the plasma generated between the upper electrode and the lower electrode is sharply lowered. The plasma density in the edge sheath region is not uniform. As described above, when the bottom surface of the substrate is etched by the plasma generated in the edge region, the etching rate of the bottom surface of the substrate is lowered and the etching uniformity is deteriorated. Therefore, in order to provide the substrate with a central region of the high-density plasma between the upper electrode and the lower electrode, the gap between the upper electrode and the lower electrode must be adjusted a plurality of times each time to perform a repetitive process.

In addition, the substrate is spaced apart from the upper electrode by a predetermined distance, and the substrate may be placed on the upper electrode by an electric field generated in the reaction chamber. Therefore, the substrate is deviated from the processing position, and the etching uniformity of the bottom surface of the substrate is deteriorated.

In addition, the high-density plasma generated between the upper electrode and the lower electrode of the related art has properties of high electrode voltage, magnetic bias, and plasma impedance, so that the electrode is damaged by the plasma ions in the direction of acceleration of the plasma ions.

In addition, one side of the substrate supporting unit supporting the substrate has an opening to prevent the substrate from being transferred into the reaction chamber. Therefore, when the substrate is supported by the supporting unit and the reaction gas is ejected toward the bottom surface of the substrate, the reaction gas can leak through the side opening of the substrate supporting unit. This will cause a loss or disturbance of the reaction gas. Further, when the plasma is generated under the substrate, the plasma generated under the substrate may leak or separate through the side opening of the support unit.

At the same time, the exhaust unit formed in the lower portion of the reaction chamber discharges by-products of the gas injected into the reaction chamber during the etching of the bottom surface of the substrate. This causes the gas to have inconsistent residence times at the central portion and the edge of the bottom surface of the substrate. That is, since the exhaust unit discharges the reaction gas remaining at the edge of the bottom surface of the substrate and then discharges the reaction gas remaining in the central portion of the bottom surface of the substrate, the residence time of the reaction gas at the bottom edge of the substrate is smaller than that of the reaction gas at the substrate. The residence time at the center of the bottom surface. When there is the above difference in the residence time of the gas on the bottom surface of the substrate, the etching rate of the central portion of the substrate is different from the etching rate at the edge of the substrate, so that the etching uniformity of the entire bottom surface of the substrate is deteriorated.

The present invention provides a baffle, a substrate support device, and a plasma processing apparatus and method that allow the reaction gas to have a uniform residence time at a central portion and an edge of the bottom surface of the substrate.

The present invention also provides a baffle, a substrate support device, and a plasma processing device and method that can effectively remove impurities generated on the bottom surface of the substrate by avoiding leakage of reaction gas from the bottom surface of the substrate.

The present invention also provides a baffle, a substrate support device, and a plasma processing apparatus and method that avoid damage to the lower electrode by the high density plasma and accurately position the substrate at the processing position.

According to an exemplary embodiment, a baffle disposed on one side of the plate and configured to discharge exhaust gas includes a side wall member extending upward from the outside of the plate and a horizontal member coupled to the side wall member and located at a higher position of a horizontal plane of the plate . The horizontal member can be seated on the top surface of the side wall member and provided with a plurality of discharge holes. The side wall member is formed in a hollow column shape, and an inner lower surface of the side wall member may be coupled to an outer portion of the flat plate.

A portion of the upper portion of the side wall member may slope upward as it extends outward. The protrusion may be formed inwardly from the inner circumference of the side wall member and seated on the top surface of the panel. The curved portion may be formed on a bottom surface of the horizontal member seated on the top surface of the side wall member, and the curved portion is bent downward from the horizontal member.

The discharge hole is formed in a slit shape extending in a radial direction from the center of the horizontal member; or the slit-shaped discharge hole may be divided in a radial direction of the horizontal member; or the discharge hole is formed in a slit shape disposed in a circumferential direction of the horizontal member .

According to another exemplary embodiment, a substrate supporting device includes: a flat plate; a baffle having a side wall member extending upward from the outside of the flat plate; and a horizontal member coupled to the side wall member and located at a higher position of the flat surface; and a base support , place the substrate on the top of the plate.

According to another exemplary embodiment, a plasma processing apparatus includes: a reaction chamber; a shielding member disposed at an upper portion of the reaction chamber and configured to eject a non-reactive gas; a substrate support member to place the substrate under the shielding member; and a flat plate for Spraying a reactive gas onto the bottom surface of the substrate; and a baffle having a sidewall member extending upwardly from the exterior of the panel and a horizontal member coupled to the sidewall member and located at a higher position of the horizontal plane of the panel. The baffle may be disposed at a level consistent with the level of the substrate resting on the substrate support or at a level higher than the level of the substrate resting on the substrate support. The shielding member can eject a non-reactive gas.

According to another exemplary embodiment, a plasma processing apparatus includes: a reaction chamber; a shielding member disposed in the reaction chamber; a first high frequency generator disposed to face the shielding member and configured to generate plasma in the reaction chamber; and a substrate supporting unit a support substrate between the shield member and the first high frequency generator; an antenna disposed to be spaced apart from the outer circumference of the side wall of the reaction chamber by a predetermined distance and configured to apply a second high after applying the first high frequency from the first high frequency generator a frequency signal; and a second high frequency generator comprising a high frequency power source that applies a high frequency signal to the antenna.

The antenna may be formed parallel to the side walls of the reaction chamber or have an angle of inclination with respect to the side walls.

The base support unit may include a lift pin and a base bracket spaced from the outside of the thimble and configured to move up and down. The base support can include a seating portion on which the base rests, and one or more supports that move the seating portion up and down.

The seating portion can be formed in a ring shape. At this point, the seating part can be divided. The support members may be respectively connected to the respective seating portions formed by the divided rings.

The protrusion may be formed on the inner circumference of the seating portion, and the base may be seated on the top surface of the protrusion. In this regard, the protrusion may be formed to be divided along the inner circumference of the seating portion.

A hard stopper may extend downward from the shielding member to form a bottom surface of the shielding member. A recess may be formed in the bottom surface of the shield member, and a rigid stopper may be formed in the recess. The hard limiter can be formed by an annular closed curve, a split ring, a circle or a polygon. In addition, an inductor may be disposed on the bottom surface of the shielding member.

According to another exemplary embodiment, a plasma processing apparatus includes: a reaction chamber; a shielding member disposed in the reaction chamber; a high frequency generator disposed to face the shielding member and configured to generate plasma in the reaction chamber; and a substrate supporting unit, The support substrate is between the shielding member and the high frequency generator, wherein the hard stopper is formed on the bottom surface of the shielding member.

The hard limiter may be formed in a closed curve of an annular shape, a split ring shape, a circular shape or a polygonal shape, and extends downward from the shield member on the bottom surface of the shield member.

According to another exemplary embodiment, a plasma processing method includes: loading a substrate into a reaction chamber; seating a loaded substrate on a substrate supporting unit; moving the substrate to a processing position; and generating capacitive coupling on the bottom surface of the substrate An initial plasma of a capacitively coupled plasma (CCP) type; a high-density inductively coupled plasma (ICP) type plasma having a higher density than the initial plasma density on the bottom surface of the substrate; and the use of the high density electricity Slurry to treat the substrate.

The loading of the substrate is performed while the substrate is seated on the thimble.

The substrate will be moved to the processing position by using a substrate holder to lift the substrate resting on the thimble.

According to another exemplary embodiment, a plasma processing apparatus includes: a reaction chamber; a shielding member disposed in an upper interior of the reaction chamber; a hard stopper disposed under the shielding member; and a first high frequency generator disposed opposite a shielding member and adapted to generate a plasma in the reaction chamber; a substrate supporting unit, the supporting substrate between the shielding member and the first high frequency generator; a flat plate for spraying the reaction gas to the bottom surface of the substrate; and a baffle plate disposed on the flat plate a periphery, the antenna being disposed to be spaced apart by a predetermined distance from a periphery of the reaction chamber sidewall and configured to apply a second high frequency signal after applying the first high frequency from the first high frequency generator; and a second high frequency generator including the pair of antennas A high frequency power supply that applies high frequency signals.

According to the exemplary embodiment, since the leakage of the reaction gas and the plasma under the substrate can be avoided, the etching rate and the etching uniformity of the bottom surface of the substrate can be improved.

In addition, since the ICP type is used to generate high-density plasma in the reaction chamber, it is possible to prevent the plasma from damaging the lower electrode.

In addition, since the rigid stopper is provided at the lower portion of the shield member, the substrate can be accurately set at the processing position.

In addition, since the gas in the region below the substrate is discharged at a level equal to or higher than the substrate, the residence time of the reaction gas at the center portion and the edge of the bottom surface of the substrate becomes uniform, thereby improving the etching rate and etching of the substrate. Uniformity.

Further, since the flow of the exhaust gas can be effectively realized by the slits of various shapes formed in the baffle plate, the etching rate and the etching uniformity can be improved.

The above and other objects, features and advantages of the present invention will become apparent from

Hereinafter, specific embodiments will be described in more detail with reference to the accompanying drawings. However, the invention may be embodied in different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and fully disclosed. The dimensions of the layers and regions are exaggerated for clarity of the description in the drawings. Similar reference numerals always indicate similar elements.

1 is a schematic view of a plasma processing apparatus having a substrate supporting unit according to an exemplary embodiment, FIG. 2 is a perspective view of an electrode of the substrate supporting unit according to the exemplary embodiment of FIG. 1, and FIG. 3 is an example according to FIG. FIG. 4 is a cross-sectional view of a baffle and electrode assembly according to an exemplary embodiment of FIGS. 1 through 3, and FIG. 5 is an illustration of the example according to FIG. A schematic cross-sectional view of the operation of the plasma processing apparatus having the substrate supporting unit of the embodiment, and FIGS. 6 to 9 are cross-sectional and perspective views of modified examples of the baffle of FIG.

1 to 5, a plasma processing apparatus having a substrate supporting unit according to an exemplary embodiment includes: a reaction chamber 100; a shielding member 200 disposed inside the reaction chamber 100; and a substrate supporting unit 300 disposed on the shielding The opposite of the member 200.

The reaction chamber 100 is usually formed in a cylindrical or rectangular box shape. The reaction chamber 100 defines a predetermined interior space in which the substrate S can be processed. The reaction chamber 100 is not limited to a specific shape, but may be formed in a shape corresponding to the substrate. Here, the door 110 through which the substrate S enters and exits is formed on the side wall of the reaction chamber 100. An outlet 120 for discharging reaction by-products (such as particles) generated during the etching process to the reaction chamber 100 is disposed through the bottom of the reaction chamber 100. At this point, a discharge unit (not shown) (such as a pump) for discharging the byproducts from the reaction chamber 100 is connected to the outlet 120. Although the reaction chamber 100 is described in the above description as a monolithic body, the reaction chamber 100 can be designed to have a reaction chamber below the top opening and a reaction chamber cover covering the top opening of the lower reaction chamber.

The shield member 200 is formed in a disk shape on the inner top surface of the reaction chamber 100 to prevent plasma from being generated in the non-etched region of the substrate S (i.e., the top surface and the side surface of the substrate S). Here, the recess 210 may be formed on the bottom surface of the shield member 200 to surround the top surface and the side surface of the substrate S. When the process starts, the substrate S is disposed in the recess 210 formed on the bottom surface of the shield member 200, and the top surface and the side surface thereof are spaced apart from the shield member by a predetermined distance. Therefore, plasma can be prevented from being generated on the top and side surfaces of the substrate S. Needless to say, depending on the shape of the shield member, plasma can be prevented from being generated on the top or top surface and side surfaces of the substrate S. At this point, a ground potential is applied to the shield member 200. A cooling member (not shown) for adjusting the temperature of the shield member 200 may be provided in the shield member 200. That is, the cooling member prevents the temperature of the shield member 200 from increasing above a predetermined value, thereby protecting the shield member 200 from the plasma generated in the reaction chamber 100.

The substrate supporting unit 300 according to the exemplary embodiment, the shield member 200 placed in the reaction chamber 100, and the reaction gas is sprayed on the bottom surface of the substrate S in a state where the substrate S is supported at predetermined intervals. The substrate supporting unit 300 can also be used to discharge reaction by-products generated during or after the process of treating the substrate S using the plasma generated by the reactive gas. Here, the plasma discharge position is consistent with or higher than the level of the treated substrate S.

The substrate supporting unit 300 according to the exemplary embodiment includes: an electrode 310; a substrate supporting member 320 that spaces the substrate S and the electrode 310 by lifting the substrate S; and a baffle 400 coupled to the outer circumference of the electrode 310. Here, the lift assembly 330 is disposed under the electrode 310, that is, on the side of the substrate supporting member 320, to place the substrate S entering the reaction chamber 100 on the top surface of the electrode 310.

As shown in FIG. 2, the electrode 310 is formed in a disk shape. However, the shape of the electrode 310 is not limited to a specific shape, but may be formed in a shape corresponding to the substrate S. An insulating plate can be used in place of the electrode 310. At this time, the electrode member may be disposed in the insulating plate. The electrode 310 is provided with a plurality of injection holes 312 for injecting gas to the bottom surface of the substrate S provided at the processing position. The electrode 310 is also provided with a plurality of thimble moving holes 314 that do not interfere with the ejection holes 312. The thimble 332 is moved in the vertical direction via the thimble moving hole 314. In addition, the electrode 310 is further provided with a plurality of substrate support moving holes 316 which are vertically moved by the substrate supporting moving holes 316 and which do not interfere with the ejection holes 312 and the thimble moving holes 314. In this regard, the number of the ejector moving holes 314 and the base support moving holes 316 is not particularly limited. That is, the number of ejector moving holes 314 and base support moving holes 316 may correspond to the number of thimbles 332 and substrate supports 322, respectively. Referring again to FIG. 1, a gas supply unit 340 and a high frequency power source 350 to which an electric field is applied to the counter electrode 310 are connected and disposed under the electrode 310.

The substrate support member 320 includes a substrate support 322 disposed in the electrode 310, supporting the bottom surface of the substrate S, and moving the substrate S to the processing position, and a driving unit 324 for moving the substrate support 322 in the vertical direction. The base support member 322 includes a seating portion 322a on which the base S sits, and a support portion 322b that is bent downward from the edge of the seating portion 322a. The seating portion 322a is disposed on the top surface of the electrode 310 to support the bottom surface edge of the substrate S, and the support portion 322b is configured to move the seating portion 322a in the vertical direction to place the substrate S in the processing position. Here, the seating portion 322a is formed in a rod shape to support a predetermined portion of the edge of the substrate S. Alternatively, the seating portion 322a may be formed in a ring shape to support the entire edge portion of the substrate S. In addition, the driving unit 324 is coupled to the lower portion of the substrate support 322 to provide a driving force to the substrate support 322, thereby moving the substrate support 322 in the vertical direction.

The baffle 400 is coupled to the electrode 310 along the outer circumference of the electrode 310 to discharge the plasma generated in the reaction chamber 100. Here, the baffle 400 is disposed above the top surface of the electrode 310 and is coincident or higher than the horizontal plane of the substrate S disposed at the processing position during the etching process. That is, when the bottom surface of the substrate S is etched, the baffle 400 controls the residence time of the plasma on the bottom surface of the substrate S while discharging the by-products of the plasma and the non-reactive gas.

As shown in FIG. 3, the baffle 400 includes a side wall member 410 and a horizontal member 420 disposed on the top of the side wall member 410 and provided with a plurality of discharge holes 422.

The side wall member 410 is formed in a columnar shape having top and bottom openings. The inner circumference of the side wall member 410 is coupled to the outer circumference of the electrode 310. Here, the inner peripheral portion of the side wall member 410 is coupled to the outer circumference of the electrode 310 by a fastener 500 such as a screw such that the side wall member 410 extends vertically upward above the top surface of the electrode 310. That is, since the side wall member 410 is formed in the vertical direction of the electrode 310, the side wall member 410 can change the flow direction of the plasma generated on the electrode 310 to the vertical direction while allowing the plasma to stay on the electrode for a predetermined time. . Therefore, the plasma may have a sufficient time to stay at the bottom edge of the electrode 310, and the residence time of the reaction gas in the central portion of the bottom surface of the electrode 310 is almost identical to the residence time of the reaction gas at the bottom edge of the electrode 310.

The horizontal member 420 is formed in a ring shape having a central opening. A portion of the bottom surface of the horizontal member 420 sits on top of the side wall member 410. A horizontal member 420 seated on top of the sidewall member 410 extends outwardly from the sidewall member 410. The horizontal member 420 is provided with a plurality of discharge holes 422 through which plasma guided along the side wall members 410 is discharged.

The thimble lifting assembly 330 includes a ejector pin 332 and a ejector drive unit 334 that moves the ejector pin 332 in a vertical direction. The ejector pin 332 is configured to movably pass through the ejector moving hole 314 formed through the through electrode 310 to support the bottom surface of the substrate S transferred into the reaction chamber 100, and to provide the substrate S on the top surface of the electrode 310.

As shown in FIG. 5, when the process starts and the electrode 310 is lifted to be spaced apart from the substrate S, the baffle 400 coupled to the outer periphery of the electrode 310 is lifted together with the electrode 310. Subsequently, the substrate S disposed on the top surface of the electrode 310 is lifted by the substrate support 322 disposed under the electrode 310 such that the substrate S is spaced apart from the shield member 200 by a predetermined distance. In more detail, the substrate S is lifted to be disposed in the recess 210 formed on the bottom surface of the shield member 200. In this regard, the horizontal member 420 of the baffle 400 can be set to coincide with or higher than the horizontal plane of the substrate S. Here, the predetermined distance between the shield member 200 and the substrate S may be 0.5 mm or less. That is, the distance between the bottom surface of the concave portion 210 formed on the bottom surface of the shield member 200 and the top surface of the substrate S may be 0.5 mm or less, and the distance between the side surface of the substrate S and the inner side wall defining the concave portion 210 is also 0.5 mm or less. . These distances avoid damage to the components formed on the top surface of the substrate S. In addition, in order to further avoid damage of the element formed on the top surface of the substrate S, the shield member 200 is formed in a shower head type, and the insulating member of the shower head type shield member 200 injects a non-reactive gas such as helium into the substrate S The top surface prevents plasma generated under the bottom surface of the substrate S from being applied to the top surface of the substrate S.

Subsequently, when the reaction gas is ejected from the electrode 310 to the bottom surface of the substrate S to generate plasma on the bottom surface of the substrate S, the plasma is uniformly distributed on the central portion and the edge of the bottom surface of the substrate S. The evenly distributed plasma uniformly etches the bottom surface of the substrate S.

Here, the plasma generated at the bottom edge of the substrate S is guided upward by the sidewall member 410 of the baffle 400 and discharged through the horizontal member 420, so that the residence time of the plasma generated at the bottom edge of the substrate S is generated from the substrate S. The plasma at the center of the bottom is almost the same. Therefore, the etching rate of the bottom edge of the substrate S becomes the same as the etching rate of the central portion of the bottom surface of the substrate S, thereby improving process uniformity.

In order to position the baffle above the level of the substrate S at the processing location, the baffles according to the exemplary embodiment may be modified as follows.

As shown in FIG. 6, the baffle 400 includes a sidewall member 410 coupled to the outer periphery of the electrode 310 and a horizontal member 420 seated on top of the sidewall member 410. The sidewall member 410 is coupled to the outer circumference of the electrode 310 by a fastener 500 such as a screw.

The curved portion 430 extends from the horizontal member 420 and is bent downward into a "┐" shape.

A curved portion 430 is provided on top of the side wall member 410 to increase the height of the horizontal member 420. Therefore, the baffle 400 can discharge the plasma generated on the bottom surface of the substrate S above the level of the substrate S to be discharged. Therefore, the uniformity of the plasma generated at the center portion and the edge of the substrate S can be improved, and the etching uniformity of the bottom surface of the substrate S can be improved.

Although the plasma discharge position is made higher than the horizontal plane of the substrate S by forming the curved portion 430 on the bottom surface of the horizontal member 420 in the above description, the present invention is not limited to this configuration. For example, the sidewall member 410 is designed to be longer in the vertical direction and coupled to the outer circumference of the electrode 310. In this state, the horizontal member 420 is provided on the top of the side wall member 410. In doing so, the plasma discharge position can be higher than the level of the substrate S.

In addition, as shown in FIG. 7, the baffle 400 includes a sidewall member 410 disposed on an outer circumference of the electrode 310 and extending over the electrode 310, and a horizontal member 420 disposed on the top of the sidewall member 410 and extending outward from the sidewall member 410. The baffle 400 further includes a protrusion 412 that extends inwardly from the sidewall member 410.

The horizontal member 420 is disposed higher than the top surface of the electrode 310 by the side wall member 410, and the protrusion 412 extending inward from the side wall member 410 is disposed to cover the top surface edge of the electrode 310 to fix the side wall member 410. That is, the protrusion 412 allows the baffle 400 to be coupled to the outer circumference of the electrode 310 without the use of a separate fastener. Here, the protrusion 412 may be formed in a closed loop shape. Alternatively, a plurality of protrusions 412 may be formed along the inner circumference of the side wall member 410. The protrusion 412 may be integrally formed with the side wall member 410. Alternatively, the protrusions 412 can be separately fabricated and coupled to the sidewall member 410.

According to these changes, the baffle 400 can be coupled to the outer circumference of the electrode 310 without using a fastener. This simplifies the structure of the device and increases work efficiency.

Alternatively, as shown in FIG. 8, the baffle 400 includes a sidewall member 410 coupled to the outer periphery of the electrode 310, and a tilting member 414 disposed on the top of the sidewall member 410, extending upwardly and extending outwardly from the sidewall member 410 as it extends upwardly. And a horizontal member 420 disposed on the top of the inclined member 414 and extending outward from the inclined member 414.

The sidewall member 410 is coupled to the outer circumference of the electrode 310 to fix the baffle 400 to the electrode 310. The side wall member 410 is coupled to the outer circumference by a fastener 500 such as a screw. Since the inclined member 414 extends upward from the side wall member 410 and is inclined outward from the side wall member 410 as it extends upward, the horizontal member 420 is disposed above the horizontal plane of the electrode 310. The tilting member 414 is used to guide the plasma generated on the electrode 310 above the horizontal member 420 while avoiding the plasma staying at the top edge of the electrode 310. Although the side wall member 410 and the inclined member 414 are separately formed in the above description, the present invention is not limited to this configuration. That is, the side wall member 410 and the inclined member 414 can be integrally formed. Further, the present invention is not limited to providing only one inclined member 414 between the side wall member 410 and the horizontal member 420. For example, a plurality of inclined members may be disposed between the side wall member 410 and the horizontal member 420, and the inclined members 410 may have different inclinations.

According to these modifications, since the inclined member 414 can be further provided between the side wall member 410 and the horizontal member 420, the plasma generated on the bottom surface of the electrode 310 can be efficiently guided above the horizontal member 420, thereby effectively discharging the guided Plasma.

The discharge holes formed through the horizontal members 420 of the baffle 400 can be modified as follows to effectively discharge the plasma generated on the bottom surface of the substrate S and improve the etching uniformity.

As shown in Fig. 9 (a), (b) and (c), the horizontal member 420 is formed of an annular plate having a central opening. The horizontal member 420 is provided with a plurality of discharge holes 422. Here, as shown in FIG. 9(a), the discharge hole 422 may be formed in a slit shape extending a predetermined length in the radial direction of the horizontal member 420. The discharge holes 422 may be equally spaced in the circumferential direction of the horizontal member 420. As shown in Fig. 9 (b), the slit-shaped discharge hole 422 extending in the radial direction is divided into two parts. Alternatively, as shown in FIG. 9(c), the discharge hole 422 may be formed in a slit shape extending a predetermined length in the circumferential direction of the horizontal member 420. The discharge hole 422 is not limited to the above configuration.

By forming the discharge holes 422 of various shapes through the horizontal member 420, the plasma generated under the substrate S can be more efficiently discharged, and the etching uniformity of the bottom surface of the substrate S can be improved.

The operation of the plasma processing apparatus having the baffle assembly will be described below with reference to the embodiments with reference to Figs. 1 through 6.

When the substrate S is transferred into the reaction chamber 100, the ejector pin 332 disposed under the electrode 310 protrudes above the electrode 310 through the ejector moving hole 314 formed through the through electrode 310 to support the substrate S. Subsequently, the ejector pin 332 carrying the substrate S is moved downward so that the substrate S bears on the top surface of the electrode 310. The electrode 310 carrying the substrate S is moved upward to be spaced apart from the shield member 200 provided on the top surface of the reaction chamber S by a predetermined distance. At this point, the baffle 400 coupled to the outer periphery of the electrode 310 also moves upward. Next, the substrate support 322 is moved upward above the electrode 310 while supporting the substrate S, and thus the substrate S is placed in the recess 210 formed on the bottom surface of the shield member 200. Here, the baffle 400 coupled to the outer periphery of the electrode 310 may be positioned to coincide with or higher than the horizontal plane of the substrate S.

Subsequently, when a reaction gas is ejected from the electrode 310 to the bottom surface of the substrate S, and a high frequency is applied to the electrode 310, a magnetic field is formed in the reaction chamber 100, and thus the reaction gas injected to the bottom surface of the substrate S becomes a plasma. The plasma is uniformly applied to the bottom surface of the substrate S along the central portion and the edge of the bottom surface of the substrate S, thereby etching the bottom surface of the substrate S. Here, the plasma generated at the bottom edge of the substrate S stays on the bottom surface for a sufficient period of time, after which the plasma is directed upward along the sidewall member 410 and then discharged via the horizontal member 420. Therefore, the residence time of the plasma on the bottom edge of the substrate S is almost equal to the residence time of the plasma in the central portion of the bottom surface of the substrate S, so the etching rate at the center portion and the edge of the bottom surface of the substrate S is uniform. Therefore, the process uniformity is improved.

The baffle 400 makes the plasma have the same residence time at the central portion and the edge of the bottom surface of the substrate S. Therefore, the etching rate at the bottom edge of the substrate S which is originally low with respect to the central portion of the bottom surface of the substrate S becomes the bottom surface of the substrate S. The etching rate at the center portion is the same, thereby improving the etching uniformity of the bottom surface of the substrate S.

Hereinafter, a plasma processing apparatus according to another exemplary embodiment of the present invention will be described in detail.

10 is a schematic view of a plasma processing apparatus according to another exemplary embodiment, and FIGS. 11(a), (b) and (c) are rear views of a shield member of the plasma processing apparatus according to the exemplary embodiment of FIG. 10; 12 to 14 are cross-sectional views of modified examples of the second high frequency generator according to the exemplary embodiment of Fig. 10, and Fig. 15 is a perspective view of the substrate holder of the substrate supporting unit according to the exemplary embodiment of Fig. 10. 16 to 18 are perspective views of modified examples of the substrate holder of Fig. 15, and Figs. 19 to 21 are cross-sectional views showing the operation of the plasma processing apparatus according to the exemplary embodiment of Fig. 10.

Referring to FIG. 10, a plasma processing apparatus according to another exemplary embodiment includes: a reaction chamber 1100; a shielding member 1200 disposed at an upper portion of the reaction chamber 1100; and a first high frequency generator 1300 disposed opposite to the shielding member 1200; The second high frequency generator 1500 is disposed along the outer circumference of the reaction chamber 1100; and the substrate supporting unit 1400 supports the substrate between the shield member 1200 and the first high frequency generator 1300.

The reaction chamber 1100 is generally formed in a cylindrical or rectangular box shape. The reaction chamber 1100 defines a predetermined interior space in which the substrate S can be processed. " The high-frequency passage window 1110 is bent inside the reaction chamber 1100 between the top surface and the upper side wall of the reaction chamber 1100. The high-frequency passage window connects the side wall of the reaction chamber 1100 to the top surface of the reaction chamber 1100. The window 1110, the diameter of the top surface of the reaction chamber 1100, is formed to be smaller than the diameter of the bottom surface of the reaction chamber 1100. Although the reaction chamber 1100 is generally formed in a cylindrical or rectangular box shape in the above description, the present invention is not limited to this configuration. 1100 may be formed in a shape corresponding to the substrate. A gate 1120 entering and exiting through the substrate S is formed on a sidewall of the reaction chamber 1100. The reaction 1100, which is generated during the etching process, is discharged from the reaction chamber 1100 through the reaction. The bottom of the chamber 1100 is disposed. At this point, a discharge unit (such as a pump, not shown) for discharging the by-product discharge reaction chamber 1100 is connected to the outlet 1130. Although the reaction chamber 1100 is described as a single mechanism in the above description. However, the reaction chamber 1100 can be designed to have a reaction chamber cover having a reaction chamber below the top opening and a top opening covering the lower reaction chamber.

The shield member 1200 is formed in a disk shape on the inner top surface of the reaction chamber 1100. A concave portion may be formed on the bottom surface of the shield member 1200 to surround the top surface and the side surface of the substrate S. The recess may be formed in a shape corresponding to the substrate S such that the substrate S is disposed such that the top surface and the side surface are spaced apart from the surface of the recess. The recess is formed to be slightly larger than the substrate S to space the substrate S from the surface of the recess. The rigid stopper 1210 protrudes from the bottom surface of the shield member 1200 in the form of a closed curve. The hard stopper 1210 is not only used to maintain a predetermined gap between the bottom surface of the shield member 1200 and the substrate S, but also to prevent the substrate S from being trapped in the bottom surface of the shield member 1200 by the electric field generated in the reaction chamber 1100.

As shown in FIG. 11(a), the rigid stopper 1210 may be formed in a ring shape defining a closed curve on the bottom surface of the shield member 1200. Alternatively, as shown in FIG. 11(b), the rigid stopper 1210 may be formed in a plurality of segments. Alternatively, as shown in FIG. 11(c), the rigid stopper 1210 may include protrusions formed of a plurality of dots (such as a circle or a polygon) protruding from the bottom surface of the shield member 1200. Therefore, the hard stopper 1210 can be in line contact or point contact with the substrate S.

Referring again to Figure 10, a plurality of inductors (not shown) attached to the underside of the hard limiter 1210 can be used in place of the rigid limiter 1210. An inductor attached to the bottom surface of the shield member 1200 is used to cut off the driving force of the substrate supporting unit 1400 of the lifting substrate S when the substrate S is lifted to the contact sensor. Therefore, the substrate can be always disposed at a predetermined position.

A ground potential is applied to the shield member 1200. A cooling member (not shown) for adjusting the temperature of the shield member 1200 may be provided in the shield member 1200. That is, the cooling member can prevent the temperature of the shield member 1200 from increasing above a predetermined value, thereby protecting the shield member 1200 from the plasma generated in the reaction chamber 1100. A gas supply unit (not shown) for injecting a non-reactive gas to the top surface of the substrate S may be coupled to the shield member 1200. In this regard, when the gas supply unit is coupled to the shield member 1200, the bottom surface of the shield member 1200 may be provided with a plurality of injection holes (not shown) to inject the non-reactive gas supplied from the gas supply unit to the top surface of the substrate S.

The first high frequency generator 1300 is configured to face the shield member 1200. The first high frequency generator 1300 includes: a lower electrode 1310; a lifting member 1320 for moving the lower electrode 1310 up and down; a first high frequency power source 1340 for applying a high frequency to the lower electrode 1310; and a gas supply unit 1330 for The reaction gas is supplied to the lower electrode 1310.

The lower electrode 1310 is formed in a disk shape, and may be formed substantially in a shape corresponding to the substrate S. A plurality of injection holes 1312 for spraying a reaction gas onto the bottom surface of the substrate S are formed on the top surface of the lower electrode 1310. The lifting member 1320 that moves the lower electrode 1310 downward is connected to the lower portion of the lower electrode 1310. Here, the ejection holes 1312 formed on the top surface of the lower electrode 1310 may be formed in various shapes such as a circle, a polygon, or the like. Further, a first high-frequency power source 1340 that applies a high frequency to the lower electrode 1310 and a gas supply unit 1330 that communicates with the injection hole 1312 formed on the top surface of the lower electrode 1310 are connected to the lower portion of the lower electrode 1310. That is, the first high frequency generator 1300 applies a high frequency signal to the reaction gas injected to the lower electrode 1310 to activate the reaction gas, thereby generating initial plasma in the reaction chamber 1100.

The second high frequency generator 1500 is disposed along the outer circumference of the reaction chamber 1100 and spaced apart from the outer circumference of the reaction chamber 1100. The second high frequency generator 1500 includes an antenna 1510 that generates a high frequency in the reaction chamber 1100, a second high frequency power supply 1530 that applies a high frequency to the antenna 1510, and a shielding member 1520 that is disposed outside the antenna 1510 to shield the antenna 1510 from being generated. high frequency.

The antenna 1510 is spaced apart from the upper outer surface of the reaction chamber 1100, that is, by a high frequency through the window 1110 connected from the side wall of the reaction chamber 1100 to the top surface of the reaction chamber 1100, and surrounds the outer periphery of the high frequency passage window 1110. Here, the antenna 1510 can surround one turn. The plurality of antennas 1510 are disposed in the vertical direction. The antenna 1510 may be formed of aluminum. The surface of the antenna 1510 can be coated with silver. Of course, the number of turns of the antenna 1510 is not particularly limited. That is, the antenna 1510 can surround a plurality of turns. The number of the antennas 1510 is also not particularly limited. A second high frequency power source 1530 that applies a high frequency signal to the antenna 1510 is connected to one side of the antenna 1510. The shield member 1520 surrounds the antenna 1510 to avoid leakage of high frequency signals generated by the antenna 1510. The shield member 1520 may be formed of a shielding material such as aluminum. In addition, the high frequency pass window 1110 spaced from the antenna 1510 may be formed of a dielectric such as ceramic, quartz, or the like to introduce the high frequency generated by the antenna 1510 into the reaction chamber 1100. The second high frequency generator 1500 can convert the initial plasma generated in the reaction chamber 1100 into a high density plasma by applying a high frequency to the reaction chamber 1100.

A problem associated with the related art of generating a capacitively coupled plasma type plasma is that the plasma generated in the reaction chamber by the first frequency generator has characteristics of electrode voltage, magnetic bias, and plasma impedance, and thus The electrode is damaged by the plasma below the direction of plasma ion acceleration.

In contrast, in order to avoid damage of the lower electrode 1310 during the process of the bottom surface of the substrate S, the first high frequency generator 1300 uniformly generates initial plasma in the reaction chamber, and generates a second high frequency of the inductively coupled plasma type plasma. The generator 1500 converts the initial plasma generated in the reaction chamber into a high density plasma having a low ion energy distribution. In addition, the etching rate and etching uniformity of the bottom surface of the substrate S can be improved by the high-density plasma generated as described above.

Although the plurality of antennas 1510 are disposed in the vertical direction in the above description, the present invention is not limited thereto. That is, the plurality of antennas 1510 can be configured differently as described below.

Alternatively, as shown in FIG. 12, the second high frequency generator 1500 includes a plurality of antennas 1510 disposed in a horizontal direction outside the reaction chamber 1100, and a second high frequency power source 1530 coupled to the antenna 1510 and applied to the antenna 1510. The high frequency power; and the shielding member 1520 are disposed outside the antenna 1510 and receive the antenna 1510.

The antenna 1510 is disposed outside the high-frequency passage window 1100 that is connected to the top surface of the reaction chamber 1100 from the side wall of the reaction chamber 1100. The plurality of antennas 1510 are arranged in the horizontal direction. The second high frequency power source 1530 is connected to the side of the antenna 1510 to apply a high frequency to the antenna 1510. The shield member 1520 that receives the antenna 1510 disposed in the horizontal direction is coupled to the outside of the high frequency reaction chamber 1100. Here, the antennas 1510 disposed in the horizontal direction are disposed at a central portion of the outer side of the high-frequency passage window 1110 so as to be spaced apart from each other, and may be disposed in the upper and lower regions outside the high-frequency passage window 1110. In order to generate high-density plasma in the plasma generation space of the reaction chamber 1100, the antenna 1510 may be disposed in the center, upper, and lower regions outside the high-frequency passage window 1110.

Alternatively, as shown in FIG. 13, the plurality of antennas 1510 of the second high frequency generator 1500 may be disposed along an inclined line located at an upper portion of the outer side of the reaction chamber 1100. The antenna 1510 is provided outside the high-frequency passage window 1110 that is connected to the top surface of the reaction chamber 1100 from the side wall of the reaction chamber. The antenna 1510 is disposed along a line that is inclined upward toward the inside of the reaction chamber 1100. The second high frequency power source 1530 is connected to the side of the antenna 1510. A shield member 1520 that receives the antenna 1510 at a predetermined tilt angle is coupled to the reaction chamber 1100 outside the antenna 1510. Alternatively, as shown in FIG. 14, the plurality of antennas 1510 are disposed outside the high-frequency passage window 1110 at a predetermined inclination angle. That is, the plurality of antennas 1110 are arranged along a line that is inclined downward toward the inside of the reaction chamber. The second high frequency power source 1530 is connected to the side of the antenna 1510. In addition, the shielding member 1520 of the receiving antenna 1510 is coupled to the outside of the reaction chamber 110.

In the configuration shown in Figures 13 and 14, the antenna 1510 is arranged at a predetermined tilt angle such that the diameter of the circle defined by the upper antenna is different from the diameter of the circle defined by the lower antenna, thereby making the density of the central portion of the plasma region Can be increased. Therefore, the uniformity of the plasma can be improved.

Referring again to FIG. 10, the substrate supporting unit 1400 is disposed below the inside of the reaction chamber 1100. The substrate supporting unit 1400 includes: a plurality of thimbles 1410 supporting the substrate S delivered into the reaction chamber 1100; a substrate holder 1420 for placing the substrate S seated on the thimble 1410 at a processing position: and a driving unit 1430 for moving the substrate up and down Bracket 1420.

The thimble 1410 is installed below the inside of the reaction chamber 1100 and is disposed in a direction perpendicular to the horizontal plane of the substrate S. At this point, the thimble 1410 protrudes above the lower electrode 1310 through the lower electrode 1310. Here, the thimble 1410 is used to support the substrate S transferred into the reaction chamber 110. In order to stably support the bottom surface of the substrate S, three or more thimbles 1410 may be provided. When the substrate S is transferred into the reaction chamber 1100 by an external robot (not shown), the robot moves horizontally so that the substrate S is placed above the thimble 1410 with a predetermined interval therebetween. In this state, the substrate S sits on the ejector pin 1410 as the robot moves downward.

The substrate holder 1420 is for supporting the edge of the substrate S seated on the thimble 1410 and moving the substrate S to the processing position. The substrate holder 1420 extends in a direction perpendicular to the horizontal plane of the substrate S to penetrate the lower inside of the substrate S from the lower outside of the substrate S. The substrate holder 1420 extending into the reaction chamber 1100 passes through the lower electrode 1310 and supports almost the entire edge portion of the bottom surface of the substrate S. The substrate holder 1420 can be moved up and down to place the substrate S seated on the thimble 1410 in a processing position. In order to move the substrate holder 1420 up and down, a driving unit 1430 that provides a driving force to the substrate holder 1420 is coupled to a lower portion of the substrate holder 1420. Here, the holder that moves the substrate up and down via the lower electrode 1310 may be spaced from the outside of the thimble 1410 so as not to interfere with the thimble 1410.

Although the substrate holder 1420 is designed to move up and down via the lower electrode 1310 in the above description, the substrate holder 1420 may be disposed outside the lower electrode 1310. In addition, a substrate holder 1420 may be disposed inside the upper portion of the reaction chamber 1100 to move the substrate S. The shape of the substrate holder will be described below in more detail with reference to the accompanying drawings.

As shown in FIG. 15, the base support 1420 includes a seating portion 1422 that supports the base S and a support member 1424 that supports the seating portion 1422. The seating portion 1422 is formed in a ring shape having a central opening. The edge of the base S sits on the top surface of the seating portion 1422. Here, since the seating portion 1422 is formed in a ring shape, almost the entire edge portion of the base S contacts the seating portion 1422. The support member 1424 is coupled to the bottom surface of the seating portion 1422 to move the seating portion 1422 of the carrier substrate S. Here, although only two support members connected to the bottom surface of the seating portion 1422 are illustrated, the present invention is not limited thereto. That is, one or more supports may be provided. That is, since the substrate holder 1420 places the substrate S in the processing position while the substrate holder 1420 supports the entire edge portion of the bottom surface of the substrate S, the plasma generated on the bottom surface of the substrate S can uniformly stay.

The substrate holder of the related art has an annular seating portion which is carried by a robot to the base of the reaction chamber and has an opening portion so as not to interfere with the robot. Therefore, the seating portion supports only some portions of the bottom edge of the substrate, rather than the entire edge portion of the bottom surface of the substrate. In this case, when the reaction gas is sprayed to the bottom surface of the substrate, the reaction gas may leak through the opening portion of the seating portion. In addition, when the plasma is generated on the bottom surface of the substrate, the plasma may leak through the opening portion of the seating portion or discharge separation occurs. In this case, when the bottom surface of the substrate is treated, the etching rate and uniformity of the bottom surface of the substrate are deteriorated due to uneven plasma on the bottom surface of the substrate.

In contrast, according to this embodiment, since the ejector pin is used to support the substrate S transferred to the reaction chamber by the robot, and the seating portion 1422 of the substrate holder 1420 is formed in a ring shape, the entire edge portion of the bottom surface of the substrate S is formed. The support is supported on the seating portion 1422. The annular seating portion 1422 allows the reaction gas injected to the bottom surface of the substrate S to stay in the central region of the bottom surface of the substrate S while avoiding leakage of the reaction gas. In addition, the annular seating portion 1422 prevents the plasma generated by the reaction gas from flowing to the bottom surface of the substrate from flowing out of the central portion of the bottom surface of the substrate S and avoids discharge. Therefore, the plasma generated on the bottom surface of the substrate S is uniformly formed, so that the etching rate and uniformity of the bottom surface of the substrate S are improved.

Alternatively, as shown in FIG. 16, the base support 1420 includes a plurality of seating portions 1422a, 1422b, 1422c and a plurality of support members 1424 that support the seating portion 1422. The seating portions 1422a, 1422b, and 1422c are formed by dividing the annular member in the circumferential direction. A support member 1424 is coupled to each of the seating portions 1422a, 1422b, and 1422c. The support member 1424 is configured to move the seating portions 1422a, 1422b, and 1422c up and down. Each of the seating portions 1422a, 1422b, and 1422c places the substrate on which it is placed while being moved up and down. The divided seating portions 1422a, 1422b, and 1422c can be assembled into a seating portion 1422, and a support member 1424 can be coupled to the seating portion 1422 to move the seating portion up and down. Although the seating portion 1422 is divided into three seating portions, the present invention is not limited thereto. That is, three or more seating portions can be provided. According to these changes, since the seating portion 1422 is divided into a plurality of portions, the formability of the substrate holder 1420 can be enhanced.

Alternatively, as shown in FIG. 17, the base support 1420 includes: an annular seating portion 1422 having a central opening; a protrusion 1426 formed on an inner circumference of the seating portion 1422, and a plurality of support members 1424 supporting the sitting portion Part 1422. The protrusion 1426 extends from the inner circumference of the seating portion 1422. In more detail, the protrusion 1426 is formed along the inner circumference of the seating portion 1422 to form a closed curve. The base S is supported on a projection formed on the inner circumference of the seating portion 1422, and the entire edge portion of the bottom surface of the base S is seated on the top surface of the projection 1426. Further, the side surface of the base S is spaced apart from the inner circumference of the seating portion 1422. However, although the protrusion is not limited to a specific shape, the horizontal plane of the top surface of the protrusion 1426 may be designed to be the same as the horizontal plane of the substrate S, so that the substrate S can be stably seated on the top surface of the protrusion, 1426.

Alternatively, as shown in FIG. 18, the base support 1420 includes: an annular seating portion 1422 having a central opening; a plurality of protrusions 1426 formed on an inner circumference of the seating portion 1422; and a plurality of support members 1424; Sitting part 1422. The protrusion 1426 extends from the inner circumference of the seating portion 1422. In more detail, the projections are spaced apart from each other in the circumferential direction of the inner circumference of the seating portion. The substrate S is seated on the top surface of the protrusion 1426 formed on the inner circumference of the seating portion 1422. Therefore, the bottom surface of the substrate S partially contacts or points in contact with the protrusions 1426. Here, although the shape of the protrusion formed on the inner circumference of the seating portion and isolated from each other is not particularly limited, the horizontal surface of the top surface of the protrusion portion 1426 may be designed to be the same as the horizontal plane of the substrate S, so that the substrate S can be stably seated. On the top surface of the protrusion 1426.

The operation of the plasma processing apparatus according to the embodiment will be described below with reference to FIGS. 19 to 21.

As shown in FIG. 19, the external robot 1600 transfers the pretreated substrate S into the reaction chamber 1100 by moving the substrate S horizontally. The substrate S delivered into the reaction chamber 1100 is disposed to be spaced from the thimble 1410 mounted below the interior of the reaction chamber 1100, while the robot 1600 is moved downward to allow the substrate S to sit on top of the thimble 1410. In this regard, the substrate holder 1420 is in a state in which the top surface of the substrate holder 1420 is lower than the top of the thimble 1410.

When the substrate S is seated on the thimble 1410, the substrate holder 1420 is moved upward by the driving unit 1430 attached to the lower portion of the holder 1420, and as shown in FIG. 20, when the substrate holder 1420 is moved upward to support the entire bottom surface of the substrate S. The edge portion is spaced apart from the shield member 1200 by a predetermined distance. Here, the predetermined distance between the bottom surface of the shield member 1200 and the substrate S may be about 0.5 mm or less.

Next, as shown in FIG. 21, the lower electrode 1310 is moved upward by the lifting member connected to the lower portion of the lower electrode 1310, so that a proper gap suitable for generating high-density plasma is maintained between the lower electrode 1310 and the shield member 1200. Subsequently, the reaction gas is supplied from the gas supply unit 1330 to the lower electrode 1310, and is ejected to the bottom surface of the substrate S via the ejection holes 1312 formed on the top surface of the lower electrode 1310. At this point, the reaction gas sprayed to the bottom surface of the substrate S stays in the central region of the bottom surface of the substrate S by the annular base frame 1420 which contacts the entire edge portion of the bottom surface of the substrate S.

Next, power is applied from the first high frequency power source 1340 connected to the lower electrode 1310 to the lower electrode 1310, and the shield member 1200 is grounded. Therefore, initial plasma is generated between the lower electrode 1310 and the shield member 1200. At this point, the plasma is generated on the bottom surface of the substrate S. Subsequently, power is applied from the second high frequency power source 1530 to the antenna 1510 to generate a magnetic field by which the initial plasma generated on the bottom surface of the substrate S is converted into a high density plasma. Through the above operation, the particles formed on the bottom surface of the substrate S are etched by the high-density plasma generated on the bottom surface of the substrate S. Here, the first high frequency power source 1340 is turned off during the processing of the substrate S, and is etched by the high density plasma generated by the second high frequency generator 1500. That is to say, the high-density plasma generated by the second high-frequency generator 1500 has a low ion energy distribution, so that the plasma can be prevented from damaging the lower electrode, and the etching rate and uniformity of the substrate S can be improved. In addition, since the substrate holder 1420 supports almost the entire edge portion of the bottom surface of the substrate S, the high-density plasma formed on the bottom surface of the substrate S can stay in the central region of the bottom surface of the substrate S without leakage, thereby uniformly maintaining electricity. Pulp.

After the etching process of the bottom surface of the substrate S is completed as above, the lower electrode 1310 of the first high frequency generator 1300 is moved downward to return to the home position. Here, when the lower electrode is disposed at the home position, the ejector pin 1410 protrudes from the top surface of the lower electrode 1310. Subsequently, the substrate holder supporting the bottom surface of the substrate S starts to move downward to return to the original position, during which the substrate S seated on the top surface of the substrate holder 1420 is placed on top of the thimble 1410. Next, the substrate S is unloaded to the outside of the reaction chamber 1100 by a robot 1600 provided outside the reaction chamber 1100, and the plasma treatment is completed.

A plasma processing apparatus according to another exemplary embodiment can be constructed by combining the plasma processing apparatus of the exemplary embodiment of FIG. 1 with the plasma processing apparatus of the exemplary embodiment of FIG.

For example, a plasma processing apparatus according to another exemplary embodiment includes: a reaction chamber; a shielding member disposed at an upper portion of the reaction chamber; a hard stopper formed under the shielding member; and a first high frequency generator that is oppositely shielded The member is arranged to generate plasma in the reaction chamber; a substrate supporting unit, the supporting substrate is between the shielding member and the first high frequency generator; a flat plate for spraying the reaction gas to the bottom surface of the substrate; the baffle; and the outer periphery of the flat plate An antenna disposed at a predetermined distance near an outer circumference of the reaction chamber sidewall to apply a second high frequency signal after the first high frequency generator is applied from the first high frequency generator; and a second high frequency generator having a second application to the antenna High frequency power supply for two high frequency signals.

That is, in order to make the residence time of the reaction gas at the center portion and the edge of the bottom surface of the substrate uniform, the baffle and the substrate supporting unit are disposed in the reaction chamber. In order to avoid leakage of reactive gas and plasma remaining on the bottom surface of the substrate, first and second high frequency generators are provided.

While the invention has been shown and described with reference to the exemplary embodiments of the embodiments of the present invention Modifications and changes.

100. . . Reaction chamber

110. . . door

120. . . Export

200. . . Shielding member

210. . . Concave

300. . . Base support unit

310. . . electrode

312. . . Spray hole

314. . . Thimble moving hole

316. . . Base support moving hole

320. . . Base support member

322. . . Base support

322a. . . Sitting part

322b. . . Support part

324. . . Drive unit

330. . . Lifting assembly

332. . . thimble

334. . . Thimble drive unit

340. . . Gas supply unit

350. . . High frequency power supply

400. . . Baffle

410. . . Side wall member

414. . . Tilting member

420. . . Horizontal component

422. . . Drain hole

430. . . Curved part

500. . . fastener

1100. . . Reaction chamber

1110. . . High frequency window

1120. . . door

1130. . . Export

1200. . . Shielding member

1210. . . Hard limiter

1300. . . First high frequency generator

1310. . . Lower electrode

1312. . . Spray hole

1320. . . Lifting member

1330. . . Gas supply unit

1340. . . First high frequency power supply

1400. . . Base support unit

1410. . . thimble

1420. . . Base support

1422. . . Sitting part

1422a. . . Sitting part

1422b. . . Sitting part

1422c. . . Sitting part

1424. . . supporting item

1426. . . Protrusion

1430. . . Drive unit

1500. . . Second high frequency generator

1510. . . antenna

1520. . . Shielding member

1530. . . Second high frequency power supply

1600. . . Robot

S. . . Base

1 is a schematic diagram of a plasma processing apparatus having a substrate support unit in accordance with an exemplary embodiment.

2 is a perspective view of an electrode of a substrate support unit in accordance with the exemplary embodiment of FIG. 1.

3 is a perspective view of a baffle of a substrate support unit in accordance with the exemplary embodiment of FIG. 1.

4 is a cross-sectional view of a baffle and electrode assembly in accordance with the exemplary embodiment of FIGS. 1-3.

Figure 5 is a schematic cross-sectional view showing the operation of a plasma processing apparatus having a substrate support unit in accordance with the exemplary embodiment of Figure 1.

6 to 9(a)-9(c) are a cross-sectional view and a perspective view of a modified example of the baffle of Fig. 3.

FIG. 10 is a schematic diagram of a plasma processing apparatus in accordance with another exemplary embodiment.

11(a)-11(c) are rear views of the shield member of the plasma processing apparatus according to the exemplary embodiment of Fig. 10.

12 to 14 are cross-sectional views of modified examples of the second high frequency generator according to the exemplary embodiment of Fig. 10.

15 is a perspective view of a substrate support of a substrate support unit in accordance with the exemplary embodiment of FIG.

16 to 18 are perspective views of modified examples of the substrate holder of Fig. 15.

19 through 21 are cross-sectional views showing the operation of the plasma processing apparatus in accordance with the exemplary embodiment of Fig. 10.

100. . . Reaction chamber

110. . . door

120. . . Export

200. . . Shielding member

210. . . Concave

300. . . Base support unit

310. . . electrode

312. . . Spray hole

314. . . Thimble moving hole

316. . . Base support moving hole

320. . . Base support member

322. . . Base support

322a. . . Sitting part

322b. . . Support part

324. . . Drive unit

330. . . Lifting assembly

332. . . thimble

334. . . Thimble drive unit

340. . . Gas supply unit

350. . . High frequency power supply

400. . . Baffle

410. . . Side wall member

420. . . Horizontal component

422. . . Drain hole

Claims (25)

A baffle plate is disposed on one side of the flat plate and configured to diffuse and discharge the exhaust gas, the baffle having a plurality of injection holes for injecting a reaction gas into the upper portion through the injection hole, the baffle comprising: a sidewall member The outer portion of the flat plate extends upwardly; and a horizontal member coupled to the side wall member and located at a higher position of a horizontal plane of the flat plate, wherein the side wall member is fixedly coupled to the flat plate. The baffle of claim 1, wherein the horizontal member is seated on a top surface of the side wall member and is internally provided with a plurality of discharge holes. The baffle of claim 2, wherein the side wall member is formed in a hollow column shape, and an inner surface lower portion of the side wall member is coupled to the outer portion of the flat plate. The baffle of claim 3, wherein a portion of the upper portion of the side wall member slopes upward as it extends outward. The baffle of claim 3, wherein the protrusion extends inwardly from an inner circumference of the side wall member and seats on a top surface of the flat plate. The baffle of claim 3, wherein the curved portion is formed on a bottom surface of the horizontal member seated on a top surface of the side wall member, the curved portion being oriented from the horizontal member Bend down. The baffle according to claim 2, wherein the discharge hole is formed in a slit shape extending in a radial direction from a center of the horizontal member; the slit-shaped discharge hole is in a radial direction of the horizontal member Direction Cutting; or the discharge hole is formed in a slit shape disposed in a circumferential direction of the horizontal member. A substrate supporting device comprising: a flat plate having a plurality of injection holes for injecting a reaction gas into the upper portion through the injection hole; and a baffle plate disposed on the flat plate according to any one of items 1 to 3 of the patent application scope And a substrate support for positioning the substrate on an upper portion of the plate. A plasma processing apparatus comprising: a reaction chamber; a shielding member disposed at an upper portion of the reaction chamber and configured to spray a non-reactive gas; a substrate support member to place the substrate under the shielding member; a plurality of injection holes for injecting a reaction gas into the lower portion of the substrate through the injection hole to be separated from an upper portion of the plate; and a baffle as in any one of items 1 to 3 of the patent application scope The baffle. The plasma processing apparatus of claim 9, wherein the baffle is disposed at a level consistent with a horizontal plane of the substrate seated on the substrate support, or is disposed at a seat The level of the level of the substrate on the substrate support is at a higher level. A plasma processing apparatus comprising: a reaction chamber; a shielding member disposed in the reaction chamber; a first high frequency generator disposed opposite to the shielding member and configured to generate plasma in the reaction chamber; a substrate supporting unit including a thimble and a substrate holder spaced apart from the outer side of the thimble and configured to move up and down The substrate supporting unit supports a substrate between the shielding member and the first high frequency generator, the substrate holder includes a bearing portion and a support member for moving the seating portion up and down, the substrate is seated on a top surface of the substrate holder; a second high frequency generator comprising an antenna and a high frequency power source disposed to be spaced from an outer circumference of a sidewall of the reaction chamber and configured to be applied from the first high frequency generator A second high frequency signal is applied after the first high frequency, and the high frequency power source applies a high frequency signal to the antenna. The plasma processing apparatus of claim 11, wherein the antenna is formed to be parallel to the side wall of the reaction chamber. The plasma processing apparatus of claim 11, wherein the antenna is disposed to have an inclination with respect to a sidewall of the reaction chamber. The plasma processing apparatus according to claim 13, wherein the seating portion is formed in a ring shape or a split ring shape. The plasma processing apparatus according to claim 14, wherein the support members are respectively connected to the respective seating portions formed by the split ring shape. The plasma processing apparatus of claim 14, wherein a protrusion is formed on an inner circumference of the seating portion, and the base is seated on a top surface of the protrusion. The plasma processing apparatus of claim 16, wherein the protrusion is formed along the inner circumference of the seating portion. The plasma processing apparatus of claim 11, wherein the hard stopper is formed to extend downward from the shield member on the bottom surface of the shield member. The plasma processing apparatus of claim 18, wherein a concave portion is formed on the bottom surface of the shielding member and the hard stopper is formed in the concave portion. The plasma processing apparatus according to claim 18, wherein the hard stopper is formed in an annular closed curve, a divided ring shape, a circular shape or a polygonal shape. The plasma processing apparatus according to claim 11, wherein the bottom surface of the shielding member is provided with an inductor. A plasma processing apparatus comprising: a reaction chamber; a shielding member disposed in the reaction chamber; a high frequency generator disposed opposite to the shielding member and configured to generate plasma in the reaction chamber; and a substrate supporting unit, Supporting the substrate between the shielding member and the high frequency generator; wherein a hard stopper is formed on a bottom surface of the shielding member to maintain a gap between the substrate and the shielding member. The plasma processing apparatus according to claim 22, wherein the hard stopper is a closed curve, a ring shape, a circular shape, and a circular shape. Or a polygon extending downward from the shield member. A plasma processing method comprising: providing a plasma processing apparatus according to claim 11; loading a substrate into a reaction chamber; seating the loaded substrate on a substrate supporting unit; and moving the substrate To the processing position; utilizing the first high frequency generator to generate a capacitively coupled plasma (CCP) type initial plasma on a bottom surface of the substrate; utilizing the second high frequency generator to be on the substrate An inductively coupled plasma (ICP) type high density plasma having a strength higher than that of the initial plasma is generated on the bottom surface; and the substrate is treated using the high density plasma; and the substrate is unloaded. A plasma processing apparatus comprising: a reaction chamber; a shielding member disposed above the interior of the reaction chamber; a hard stopper disposed under the shielding member; and a first high frequency generator opposite to the shielding a member configured and adapted to generate a plasma within the reaction chamber; a substrate support unit including a thimble and a substrate holder spaced from the outer side of the thimble and configured to move up and down, the substrate support unit supporting the substrate to the shielding member and Between the first high-frequency generators, the base frame includes a bearing portion and a support member for moving the seat portion up and down, the base is seated on a top surface of the base frame; a flat plate for injecting a reaction gas to a bottom surface of the substrate; a baffle disposed on an outer circumference of the flat plate; a second high frequency generator including an antenna and a high frequency power source, the antenna being disposed to be opposite to the reaction chamber The outer perimeter of the sidewall is spaced and configured to apply a second high frequency signal after the first high frequency is applied from the first high frequency generator, and the high frequency power source applies a high frequency signal to the antenna.