JP3184550B2 - Vapor phase growth method and apparatus - Google Patents
Vapor phase growth method and apparatusInfo
- Publication number
- JP3184550B2 JP3184550B2 JP09221091A JP9221091A JP3184550B2 JP 3184550 B2 JP3184550 B2 JP 3184550B2 JP 09221091 A JP09221091 A JP 09221091A JP 9221091 A JP9221091 A JP 9221091A JP 3184550 B2 JP3184550 B2 JP 3184550B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- vapor phase
- phase growth
- raw material
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Description
【０００１】［発明の目的］[Object of the Invention]
【０００２】[0002]
【産業上の利用分野】本発明は、半導体等の製造に用い
られる気相成長装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vapor phase growth apparatus used for manufacturing semiconductors and the like.
【０００３】[0003]
【従来の技術】図９は、従来の気相成長装置の一例を示
す概略図である。この図に示すように、反応炉１００内
の下部には基板１０１を載置した基板ホルダー１０２
と、基板ホルダー１０２を回転させるための回転軸１０
３と、加熱用のヒータ１０４が配設され、上部には反応
炉１００内に原料ガスやキャリアガスを供給するガス供
給管１０５と、ガスの流れを整える複数の孔１０６ａを
形成した円盤状の整流板１０６が配設されている。ま
た、反応炉１００の下部には、回転軸１０３を回転駆動
するモータ１０７と、反応炉１００内の未反応ガス等を
排気する排気制御装置１０８が接続されている。ガス供
給管１０５は、整流板１０６のほぼ中央部の上方に位置
するようにして配設されている。2. Description of the Related Art FIG. 9 is a schematic view showing an example of a conventional vapor phase growth apparatus. As shown in this figure, a substrate holder 102 on which a substrate 101 is
And a rotating shaft 10 for rotating the substrate holder 102.
3, a heater 104 for heating, a gas supply pipe 105 for supplying a raw material gas and a carrier gas into the reaction furnace 100, and a disc-like shape having a plurality of holes 106a for regulating the gas flow. A current plate 106 is provided. In addition, a motor 107 that rotates the rotating shaft 103 and an exhaust control device 108 that exhausts unreacted gas and the like in the reactor 100 are connected to a lower portion of the reactor 100. The gas supply pipe 105 is provided so as to be located substantially above the center of the current plate 106.
【０００４】従来の気相成長装置は上記のように構成さ
れており、基板１０１をヒータ１０４の加熱によって所
定温度に上昇させると共に、モータ１０７の回転駆動に
よって所定の回転数で回転させ、ガス供給管１０５から
導入した原料ガスやキャリアガスを、整流板１０６の孔
１０６ａを通して基板１０１上に供給して薄膜を気相成
長させる。The conventional vapor phase growth apparatus is constructed as described above. The substrate 101 is heated to a predetermined temperature by heating the heater 104, and is rotated at a predetermined rotation speed by the rotation of a motor 107 to supply gas. The raw material gas and the carrier gas introduced from the pipe 105 are supplied onto the substrate 101 through the holes 106a of the current plate 106 to vapor-grow a thin film.
【０００５】[0005]
【発明が解決しようとする課題】ところで、上記したよ
うな整流板１０６の中央部上方から原料ガスを基板１０
１上に供給する従来の気相成長装置では、ガス供給管１
０５の下方に位置する整流板１０６の中央部近傍の孔１
０６ａからは流速の速いガスが流れ、周面側の孔１０６
ａからは流速の遅いガスが流れる。By the way, the raw material gas is supplied from above the central portion of the current plate 106 to the substrate 10 as described above.
In the conventional vapor phase growth apparatus which supplies the gas on the gas supply pipe 1,
05 near the center of the current plate 106 located below
06a, a gas with a high flow velocity flows, and a hole 106
A gas with a low flow velocity flows from a.
【０００６】このため、図１０に示すように基板１０１
上に気相成長する薄膜の膜厚は、基板１０１の中心側の
方が外周側より厚くなり、均一な膜厚の薄膜を得ること
が困難であった。For this reason, as shown in FIG.
The thickness of the thin film to be vapor-phase grown thereon is thicker at the center of the substrate 101 than at the outer periphery, and it has been difficult to obtain a thin film having a uniform thickness.
【０００７】本発明は上記した課題を解決する目的でな
され、均一な膜厚の薄膜を気相成長させることができる
気相成長装置を提供しようとするものである。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a vapor-phase growth apparatus capable of vapor-phase growing a thin film having a uniform thickness.
【０００８】［発明の構成］[Structure of the Invention]
【０００９】[0009]
【課題を解決するための手段】前記した課題を解決する
ために本発明は、反応炉内に原料ガスを供給し前記反応
炉内に配置した基板上に薄膜を気相成長させる気相成長
装置において、前記基板と対向して複数の孔を有する整
流板を配設すると共に、前記整流板のガス流れ方向上流
側に原料ガスもしくは原料ガスとキャリアガスとを導入
する複数のガス導入管を配設したことを特徴としてい
る。SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention provides a vapor-phase growth apparatus for supplying a raw material gas into a reactor and vapor-growing a thin film on a substrate disposed in the reactor. A rectifying plate having a plurality of holes opposed to the substrate, and a plurality of gas introduction pipes for introducing a raw material gas or a raw material gas and a carrier gas are disposed upstream of the rectifying plate in the gas flow direction. It is characterized by having been established.
【００１０】[0010]
【作用】本発明によれば、ガス導入管によって反応炉内
に導入される原料ガスもしくは原料ガスとキャリアガス
は複数のガス導入管により供給されることにより、整流
板上でのガスの運動量や圧力分布が均一化されることに
より、整流板に形成した孔を通して均一な流速で基板上
に供給される。According to the present invention, the raw material gas or the raw material gas and the carrier gas introduced into the reaction furnace by the gas introduction pipe are supplied by a plurality of gas introduction pipes, so that the momentum of the gas on the current plate is reduced. By making the pressure distribution uniform, it is supplied onto the substrate at a uniform flow rate through the holes formed in the current plate.
【００１１】[0011]
【実施例】以下、本発明を図示の一実施例に基づいて詳
細に説明する。図１は、本実施例に係る気相成長装置を
示す概略断面図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail based on one embodiment shown in the drawings. FIG. 1 is a schematic sectional view showing a vapor phase growth apparatus according to the present embodiment.
【００１２】この図に示すように、反応炉１内の上部に
は複数の孔２ａが形成されている円盤状の整流板２（図
２参照）と、２つのガス導入管３，４が配設されてお
り、反応炉１内の下部には基板５を載置した基板ホルダ
６と、基板ホルダ６を回転自在に支持する回転軸７と、
基板５と基板ホルダ６を加熱するヒータ８が配設されて
いる。また、反応炉１の下部には、回転軸７を回転駆動
するモータ９と、反応炉１内の未反応ガス等を排気する
排気制御装置１０が接続されている。As shown in FIG. 1, a disk-shaped straightening plate 2 (see FIG. 2) having a plurality of holes 2a formed therein and two gas introduction pipes 3 and 4 are arranged in an upper portion of the reactor 1. A substrate holder 6 on which a substrate 5 is placed, a rotating shaft 7 for rotatably supporting the substrate holder 6,
A heater 8 for heating the substrate 5 and the substrate holder 6 is provided. Further, a motor 9 for rotating and driving the rotating shaft 7 and an exhaust control device 10 for exhausting unreacted gas and the like in the reactor 1 are connected to a lower portion of the reactor 1.
【００１３】整流板２は、石英やステンレス等で形成さ
れており、反応炉１内の内周面に沿って形成した支持台
１１上に外周面が密接するようにして載置されている。The current plate 2 is made of quartz, stainless steel, or the like, and is placed on a support base 11 formed along the inner peripheral surface of the reaction furnace 1 so that the outer peripheral surface thereof is in close contact.
【００１４】ガス導入部３，４は、反応炉１内の上部と
整流板２との間に形成される空間に整流板２の上面２ｂ
と略平行に対向して配設され、反応炉１内に供給される
ガス（原料ガス、キャリアガス）が整流板２上で旋回流
が形成されるように、先端のガス吹出し口３ａ，４ａは
反応炉１の内周面方向に沿って形成されている（図３参
照）。また、ガス導入管３，４の外部には、原料ガス
（例えばＳｉＨ2 Ｃｌ2）、キャリアガス（例えば
Ｈ2 ）をそれぞれ反応炉１内に供給するためのガス供給
制御装置（図示省略）が接続されている。The gas inlets 3 and 4 are provided on the upper surface 2 b of the current plate 2 in a space formed between the upper portion of the reactor 1 and the current plate 2.
The gas outlets 3a, 4a at the tips are arranged so that the gas (raw material gas, carrier gas) supplied into the reaction furnace 1 forms a swirling flow on the flow straightening plate 2. Are formed along the inner peripheral surface direction of the reaction furnace 1 (see FIG. 3). A gas supply control device (not shown) for supplying a source gas (eg, SiH 2 Cl 2 ) and a carrier gas (eg, H 2 ) to the inside of the reaction furnace 1 is provided outside the gas introduction pipes 3 and 4. It is connected.
【００１５】本実施例に係る気相成長装置は上記によう
に構成されており、排気制御装置１０で反応炉１内を排
気して反応炉内圧力を調整し、ヒータ８の加熱によって
基板５を所定温度（例えば１１００℃程度）に上昇させ
ると共に、モータ９で回転軸７を回転駆動して基板ホル
ダ６（基板５）を所定の回転数で回転させ、ガス供給制
御装置（図示省略）により原料ガス、キャリアガスをガ
ス導入管３，４から反応炉１内に供給する。ガス導入管
３，４のガス吹出し口３ａ，４ａから反応炉１の内周面
方向に沿って供給されるガス（原料ガス、キャリアガ
ス）は、整流板２上で整流板２の上面２ｂに対してほぼ
平行な旋回流（図では右回転の旋回流）を形成すること
によって、ガスの混合状態が良くなり、且つガスの運動
量や圧力分布が均一化される。The vapor phase growth apparatus according to this embodiment is configured as described above. The exhaust control unit 10 evacuates the reactor 1 to adjust the pressure in the reactor, and the substrate 8 is heated by the heater 8. Is raised to a predetermined temperature (for example, about 1100 ° C.), and the rotation shaft 7 is rotationally driven by the motor 9 to rotate the substrate holder 6 (substrate 5) at a predetermined number of rotations. A raw material gas and a carrier gas are supplied into the reaction furnace 1 from the gas introduction pipes 3 and 4. Gases (raw material gas, carrier gas) supplied along the inner peripheral surface direction of the reaction furnace 1 from the gas outlets 3a, 4a of the gas introduction pipes 3, 4 are supplied to the upper surface 2b of the rectifier plate 2 on the rectifier plate 2. By forming a swirling flow that is substantially parallel to the rotating flow (a swirling flow rotating clockwise in the figure), the mixing state of the gas is improved, and the momentum and pressure distribution of the gas are made uniform.
【００１６】そして、整流板２上で旋回流が形成されて
いるガス（原料ガス、キャリアガス）は、整流板２の孔
２ａを通して均一な流速で基板５上に供給されることに
よって、基板５上に半導体薄膜が均一な膜厚で気相成長
する（図４参照）。The gas (raw material gas, carrier gas) in which the swirling flow is formed on the current plate 2 is supplied onto the substrate 5 at a uniform flow rate through the holes 2a of the current plate 2 so that the substrate 5 A semiconductor thin film is vapor-grown thereon with a uniform thickness (see FIG. 4).
【００１７】この時、基板５上に気相成長する半導体薄
膜の膜厚は、図５に示すように、整流板２の開口比（整
流板２の上面２ｂ部分の面積に対するすべての孔２ａの
占める割合）が０．２程度以下（下限値は０．０１程
度）の場合に基板５上に気相成長される半導体薄膜の膜
厚の均一性が良好になることが実験によって分ったの
で、本実施例では例えば整流板２の開口比を０．１に設
定し、また、整流板２の厚さを例えば３mmに形成した。At this time, as shown in FIG. 5, the thickness of the semiconductor thin film grown in vapor phase on the substrate 5 is determined by the opening ratio of the rectifying plate 2 (the area of all the holes 2a with respect to the area of the upper surface 2b of the rectifying plate 2). Experiments have shown that when the ratio is less than about 0.2 (the lower limit is about 0.01), the uniformity of the thickness of the semiconductor thin film grown on the substrate 5 is improved. In this embodiment, for example, the opening ratio of the current plate 2 is set to 0.1, and the thickness of the current plate 2 is formed, for example, 3 mm.
【００１８】また、反応炉１内の整流板２の上流側に形
成される空間の体積をＶ、ガス導入管３，４から反応炉
１内に供給されるガス（原料ガス、キャリアガス）のガ
ス供給量をＦとした場合、反応炉１内の上部と整流板２
の間でのガスの切換え時間τ（秒）との間に下記に示し
た (1)式のような関係がある。The volume of a space formed on the upstream side of the current plate 2 in the reaction furnace 1 is V, and the volume of a gas (raw material gas, carrier gas) supplied into the reaction furnace 1 from the gas introduction pipes 3, 4. When the gas supply amount is F, the upper part in the reactor 1 and the current plate 2
And the gas switching time τ (sec) has the relationship shown in the following equation (1).
【００１９】[0019]
【外１】 [Outside 1]
【００２０】そして、上記したガスの切換え時間が１秒
程度以下であれば薄膜成長開始時や薄膜成長終了時、ヘ
テロ界面を形成するような薄膜成長時に整流板２の孔２
ａを通して基板５に供給されるガスの均一性がよくなる
ことが発明者の実験によって分かったので、上記した
(1)式の関係よりＶ／Ｆが１（秒）程度以下になるよう
に、反応炉１内の上部と整流板２との間に形成される空
間の体積Ｖを設定すると共に、ガス導入管３，４から供
給されるガスの供給量Ｆをガス供給制御装置（図示省
略）によって制御する。If the gas switching time is about 1 second or less, the hole 2 of the rectifying plate 2 is formed at the start of the thin film growth, at the end of the thin film growth, or at the time of the thin film growth to form a hetero interface.
Since it has been found by the experiment of the inventor that the uniformity of the gas supplied to the substrate 5 through a is improved,
According to the relationship of equation (1), the volume V of the space formed between the upper part in the reactor 1 and the rectifying plate 2 is set so that V / F is about 1 (second) or less, and gas is introduced. The supply amount F of the gas supplied from the pipes 3 and 4 is controlled by a gas supply control device (not shown).
【００２１】また、基板５上に気相成長する半導体薄膜
の膜厚の均一性は、図６に示すように、整流板２から基
板５までのガス流路の広がりまたは狭まり角度θ（図７
に示した例はガス流路が広がっている場合）が約１５°
以上になると悪くなることが実験によって分ったので、
ガス流路の広がりまたは狭まり角度θを１５°程度以内
にする。図１に示した本実施例では、ガス流路の広がり
または狭まり角度θはほぼ０である。Further, as shown in FIG. 6, the uniformity of the film thickness of the semiconductor thin film grown in vapor phase on the substrate 5 depends on the angle θ (see FIG.
Is about 15 ° when the gas flow path is wide.
Experiments have shown that it becomes worse when the above is reached.
The angle θ of expansion or narrowing of the gas flow path is set within about 15 °. In the present embodiment shown in FIG. 1, the angle θ at which the gas flow path expands or narrows is substantially zero.
【００２２】尚、上記した実施例では、ガス（原料ガ
ス、キャリアガス）を導入する導入管は２つであったが
３つ以上用いてもよい。また、整流板は１つであった
が、複数枚重ねて用いてもよい。In the above-described embodiment, the number of introduction pipes for introducing gases (raw material gas, carrier gas) is two, but three or more introduction pipes may be used. In addition, although one rectifying plate is used, a plurality of rectifying plates may be used.
【００２３】図８は、本発明の他の実施例に係る気相成
長装置の整流板を示す斜視図である。この図に示すよう
に、この整流板２０は、複数の孔２１ａが形成されてい
る円盤状の平板部２１の周面に中空状の枠部２２を一体
的に形成した構成であり、枠部２２の内周面には複数の
孔２２ａが形成されている。また、枠部２２内には、２
つのガス導入管３，４が対向して配設され、枠部２２内
に供給されるガス（原料ガス、キャリアガス）が旋回流
を形成するように、先端のガス吹出し口３ａ，４ａが枠
部２２内の円周方向に沿って形成されている。他の構成
は上記した実施例と同様である。FIG. 8 is a perspective view showing a current plate of a vapor phase growth apparatus according to another embodiment of the present invention. As shown in this figure, the current plate 20 has a configuration in which a hollow frame portion 22 is integrally formed on a peripheral surface of a disk-shaped flat plate portion 21 in which a plurality of holes 21a are formed. A plurality of holes 22 a are formed in the inner peripheral surface of the nozzle 22. In the frame portion 22, 2
The two gas introduction pipes 3 and 4 are arranged to face each other, and the gas outlets 3a and 4a at the tips are framed so that the gas (raw material gas, carrier gas) supplied into the frame portion 22 forms a swirling flow. It is formed along the circumferential direction in the part 22. Other configurations are the same as those of the above-described embodiment.
【００２４】このように、本実施例においても、反応炉
１内にガス導入管３，４を介して供給されるガス（原料
ガス、キャリアガス）は、まず整流板２０の枠部２２内
で旋回流（図では右回転の旋回流）を形成してガスの混
合状態を良くしてから孔２２ａを通して平板部２１上に
導入され、平板部２１の孔２１ａを通して均一な流速で
基板５上に供給されることによって、基板５上に半導体
薄膜が均一な膜厚で気相成長する。As described above, also in the present embodiment, the gas (raw material gas, carrier gas) supplied into the reaction furnace 1 through the gas introduction pipes 3 and 4 first flows into the frame portion 22 of the rectifying plate 20. A swirling flow (clockwise swirling flow in the figure) is formed to improve the mixing state of the gas, and then the gas is introduced onto the flat plate portion 21 through the hole 22a, and is uniformly flown onto the substrate 5 through the hole 21a of the flat plate portion 21. By being supplied, the semiconductor thin film grows on the substrate 5 in a vapor phase with a uniform thickness.
【００２５】また、本実施例では、整流板２０上流側の
外周部より、ほぼ均一なガス供給が行われるため、整流
板２０上流側でのガス切換時のガス切換状態が良く、か
つ孔２２ａより供給されるガス流速を低減できるため、
ガス供給の再現性が良い。In this embodiment, since the gas is supplied substantially uniformly from the outer peripheral portion on the upstream side of the current plate 20, the gas switching state at the time of gas switching on the upstream side of the current plate 20 is good, and the holes 22a Since the flow rate of the supplied gas can be reduced,
Good reproducibility of gas supply.
【００２６】なお、整流板としては、周知の多孔質体
（多孔質金属や燃結多孔体）や微細な粒体（ガラス玉の
ようなもの）を充填して充填層を持たせたもの等を用い
ることができる。さらに開口比が０．２よりも大きな整
流板を複数重ねて実質的に開口比を０．２以下程度にし
て利用することもできる。The current plate may be a well-known porous material (porous metal or fired porous material) or a fine particle (such as a glass ball) filled with a filling layer. Can be used. Further, a plurality of rectifying plates having an aperture ratio larger than 0.2 can be stacked and used with the aperture ratio substantially set to about 0.2 or less.
【００２７】[0027]
【発明の効果】以上、実施例に基づいて具体的に説明し
たように本発明によれば、整流板上に原料ガスもしくは
原料ガスとキャリアガスを複数のガス導入口より導入す
ることにより、ガスの運動量や圧力分布が均一化され
る。従って、基板上には整流板に形成した孔を通して均
質なガスが均一な流速で供給されることによって均一な
膜厚の薄膜を気相成長させることができる。また、ガス
の切換時のガス切換状態も良く、かつガス供給の再現性
も良い。According to the present invention, as described above in detail with reference to the embodiments, by introducing a raw material gas or a raw material gas and a carrier gas from a plurality of gas inlets onto a current plate, Momentum and pressure distribution are made uniform. Therefore, a thin film having a uniform film thickness can be grown on the substrate by supplying a uniform gas at a uniform flow rate through the holes formed in the current plate. Further, the gas switching state at the time of gas switching is good, and the reproducibility of gas supply is also good.
【図１】本発明の一実施例に係る気相成長装置を示す概
略図である。FIG. 1 is a schematic diagram showing a vapor phase growth apparatus according to one embodiment of the present invention.
【図２】本発明の一実施例に係る気相成長装置の整流板
を示す斜視図である。FIG. 2 is a perspective view showing a rectifying plate of the vapor phase growth apparatus according to one embodiment of the present invention.
【図３】本発明の一実施例に係る気相成長装置の上部を
示す断面図である。FIG. 3 is a cross-sectional view showing an upper part of the vapor phase growth apparatus according to one embodiment of the present invention.
【図４】本発明の一実施例に係る気相成長装置による気
相成長時の基板面内膜厚分布を示した図である。FIG. 4 is a diagram showing a film thickness distribution in a substrate surface during vapor phase growth by a vapor phase growth apparatus according to one embodiment of the present invention.
【図５】整流板の開口比と基板面内膜厚均一性の関係を
示した図である。FIG. 5 is a diagram showing a relationship between an aperture ratio of a current plate and uniformity of film thickness in a substrate surface.
【図６】ガス流路角度と基板面内膜厚均一性の関係を示
した図である。FIG. 6 is a diagram showing a relationship between a gas flow path angle and film thickness uniformity in a substrate surface.
【図７】ガス流路が広がっている気相成長装置を示す概
略図である。FIG. 7 is a schematic diagram showing a vapor phase growth apparatus in which a gas flow path is widened.
【図８】本発明の他の実施例に係る気相成長装置の整流
板を示す斜視図である。FIG. 8 is a perspective view showing a current plate of a vapor phase growth apparatus according to another embodiment of the present invention.
【図９】従来の気相成長装置の一例を示す概略図であ
る。FIG. 9 is a schematic view showing an example of a conventional vapor phase growth apparatus.
【図１０】従来の気相成長装置による気相成長時の基板
面内膜厚分布を示した図である。FIG. 10 is a diagram showing a film thickness distribution in a substrate surface during vapor phase growth by a conventional vapor phase growth apparatus.
【符号の説明】 １ 反応炉 ２，２０ 整流板 ２ａ，２１ａ 孔 ３，４ ガス導入管 ５ 基板 ６ 基板ホルダ ７ 回転軸 ８ ヒータ ９ モータ １０ 排気制御装置[Description of Signs] 1 Reactor 2, 20 Rectifier plate 2a, 21a Hole 3, 4 Gas introduction tube 5 Substrate 6 Substrate holder 7 Rotary shaft 8 Heater 9 Motor 10 Exhaust control device
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/205 H01L 21/285 H01L 21/31 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 21/205 H01L 21/285 H01L 21/31
Claims (6)
炉内に配置した基板上に薄膜を気相成長させる気相成長
装置において、 前記基板と対向して配設された、複数の孔を有する整流
板と、 前記整流板のガス流れ方向上流側に原料ガス若しくは原
料ガスとキャリアガスとを導入する、ガス導入管とを備
え、 前記整流板の開口比は０．２以下であり、 前記反応炉内の前記整流板の上流側に形成される空間の
体積Ｖと、前記ガス導入管から当該空間に供給される前
記原料ガス若しくは原料ガスとキャリアガスのガス供給
量Ｆとの比Ｖ／Ｆは１秒以下であることを特徴とする気
相成長装置。1. A vapor phase growth apparatus for supplying a source gas into a reaction furnace and vapor-growing a thin film on a substrate disposed in the reaction furnace, comprising: A flow straightening plate having holes, and a gas introduction pipe for introducing a raw material gas or a raw material gas and a carrier gas upstream of the flow straightening plate in the gas flow direction, wherein an opening ratio of the flow straightening plate is 0.2 or less. The ratio of the volume V of the space formed on the upstream side of the current plate in the reaction furnace to the gas supply amount F of the raw material gas or the raw material gas and the carrier gas supplied from the gas introduction pipe to the space. V / F is 1 second or less.
形成された板とを備え、前記ガス導入管は前記板のガス
流れ方向上流側に配設されていることを特徴とする請求
項１に記載の気相成長装置。2. The gas flow control device according to claim 1, wherein the current plate includes a disc-shaped flat plate portion having a plurality of holes formed therein, and a plate provided on the upstream side of the flat plate portion in a gas flow direction and having a plurality of holes formed therein. The vapor phase growth apparatus according to claim 1, wherein the introduction pipe is provided on the upstream side of the plate in the gas flow direction.
当該枠部の内周面には複数の孔が形成されていることを
特徴とする請求項１に記載の気相成長装置。3. The rectifying plate includes: a disk-shaped flat plate portion having a plurality of holes formed therein; and a frame portion integrally formed around the flat plate portion.
The vapor phase growth apparatus according to claim 1, wherein a plurality of holes are formed in an inner peripheral surface of the frame portion.
前記ガス導入管が配設されていることを特徴とする請求
項３に記載の気相成長装置。4. The vapor phase growth apparatus according to claim 3, wherein the frame portion is hollow, and the gas introduction pipe is provided in the frame portion.
れ方向上流側に前記原料ガス若しくは原料ガスとキャリ
アガスとの旋回流を形成するように配設されていること
を特徴とする請求項１乃至４のいずれかに記載の気相成
長装置。5. The gas introduction pipe is arranged upstream of the current plate in the gas flow direction so as to form a swirling flow of the raw material gas or the raw material gas and the carrier gas. Item 5. The vapor phase growth apparatus according to any one of Items 1 to 4.
とを特徴とする請求項１乃至５のいずれかに記載の気相
成長装置。6. The vapor phase growth apparatus according to claim 1, wherein a plurality of said gas introduction pipes are provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09221091A JP3184550B2 (en) | 1991-04-23 | 1991-04-23 | Vapor phase growth method and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09221091A JP3184550B2 (en) | 1991-04-23 | 1991-04-23 | Vapor phase growth method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0750260A JPH0750260A (en) | 1995-02-21 |
| JP3184550B2 true JP3184550B2 (en) | 2001-07-09 |
Family
ID=14048084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP09221091A Expired - Lifetime JP3184550B2 (en) | 1991-04-23 | 1991-04-23 | Vapor phase growth method and apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3184550B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0854210B1 (en) * | 1996-12-19 | 2002-03-27 | Toshiba Ceramics Co., Ltd. | Vapor deposition apparatus for forming thin film |
| JPH10177961A (en) * | 1996-12-19 | 1998-06-30 | Toshiba Ceramics Co Ltd | Vapor growth device and method |
-
1991
- 1991-04-23 JP JP09221091A patent/JP3184550B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0750260A (en) | 1995-02-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5556275A (en) | Heat treatment apparatus | |
| JP2000331939A (en) | Film-forming device | |
| JP3758579B2 (en) | Heat treatment apparatus and heat treatment method | |
| JP3184550B2 (en) | Vapor phase growth method and apparatus | |
| JP4936621B2 (en) | Process chamber of film forming apparatus, film forming apparatus and film forming method | |
| JPS63150912A (en) | Formation of thin film and apparatus therefor | |
| JP2783041B2 (en) | Vapor phase silicon epitaxial growth equipment | |
| JP3113478B2 (en) | Semiconductor manufacturing equipment | |
| JPS59112614A (en) | Vapor growth apparatus | |
| JP3534866B2 (en) | Vapor phase growth method | |
| JPH01256118A (en) | Vapor phase reaction equipment | |
| EP0330708B1 (en) | Apparatus for forming thin films | |
| JP3115058B2 (en) | Vapor phase growth method, vapor phase growth apparatus, and fine particle generation apparatus | |
| JPS6252200A (en) | Device for gaseous-phase epitaxial growth | |
| JPS61289624A (en) | Vapor-phase growth device | |
| JPH0590167A (en) | Vapor growth method | |
| JP2775837B2 (en) | Chemical vapor deposition equipment | |
| JPS61251125A (en) | Heating process device | |
| JPH02212393A (en) | Vapor growth method and its device | |
| JPH11102903A (en) | Method and equipment for thin film forming and method for manufacturing semiconductor device | |
| JPH01119014A (en) | Barrel type vapor growth device | |
| JPH02244712A (en) | Plasma device | |
| JPS61112315A (en) | Vapor growth equipment | |
| JPH07193009A (en) | Vapor growth device and vapor growth method using vapor growth device | |
| JPS58145117A (en) | Manufacturing apparatus of semiconductor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080427 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090427 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100427 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100427 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110427 Year of fee payment: 10 |
|
| EXPY | Cancellation because of completion of term |