JPH0750260A - Vapor growth equipment - Google Patents

Vapor growth equipment

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Publication number
JPH0750260A
JPH0750260A JP9221091A JP9221091A JPH0750260A JP H0750260 A JPH0750260 A JP H0750260A JP 9221091 A JP9221091 A JP 9221091A JP 9221091 A JP9221091 A JP 9221091A JP H0750260 A JPH0750260 A JP H0750260A
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Prior art keywords
gas
substrate
raw material
plate
uniform
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JP9221091A
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Japanese (ja)
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JP3184550B2 (en )
Inventor
Hirosuke Sato
裕輔 佐藤
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Toshiba Corp
株式会社東芝
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Abstract

PURPOSE:To uniform momentum and pressure distribution of gas and realize the vapor growth of a film uniform in thickness, by introducing material gas on a straightening plate from a plurarity of gas introducing inlets. CONSTITUTION:Pressure in a reaction chamber 1 is adjusted by an exhaust controlling equipment 10, and the temperature of a substrate 5 is raised up to a specified value by using a heater 8. A substrate holder 6 (the substrate 5) is rotated by rotation-driving a rotary shaft 7 with a motor 9. Gaseous raw material and carrier gas are supplied to the reaction chamber 1 from gas introducing pipes 3, 4. The gas supplied from gas jetting nozzle of the gas introducing pipes 3, 4 forms a spiral flow on a straightening plate 2 which flow is almost parallel with the upper surface of the straightening plate 2. Thereby momentum and pressure distribution of gas are made to uniform. A semiconductor thin film uniform in thickness is vapor-grown on the substrate 5 by suppling the gaseous raw material and the carrier gas on the straightening plate 2 to the surface of the substrate 5 at a constant flow velocity on the substrate 5, through the hole of the straightening plate 2.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】[発明の目的] [0001] [purpose of the invention]

【0002】 [0002]

【産業上の利用分野】本発明は、半導体等の製造に用いられる気相成長装置に関する。 The present invention relates, on the vapor deposition apparatus used in the manufacture of semiconductors and the like.

【0003】 [0003]

【従来の技術】図9は、従来の気相成長装置の一例を示す概略図である。 BACKGROUND ART FIG. 9 is a schematic diagram showing an example of a conventional vapor phase growth apparatus. この図に示すように、反応炉100内の下部には基板101を載置した基板ホルダー102 As shown in this figure, the substrate holder 102 in the lower portion of the reaction furnace 100 in which the substrate is placed 101
と、基板ホルダー102を回転させるための回転軸10 When the rotary shaft 10 for rotating the substrate holder 102
3と、加熱用のヒータ104が配設され、上部には反応炉100内に原料ガスやキャリアガスを供給するガス供給管105と、ガスの流れを整える複数の孔106aを形成した円盤状の整流板106が配設されている。 3, the heater 104 for heating is disposed, a gas supply pipe 105 for supplying the raw material gas and carrier gas into the reaction furnace 100 in the upper part, a plurality of arranging the gas flow holes 106a formed with disk-shaped rectifying plate 106 is disposed. また、反応炉100の下部には、回転軸103を回転駆動するモータ107と、反応炉100内の未反応ガス等を排気する排気制御装置108が接続されている。 Further, the lower portion of the reactor 100, a motor 107 for rotationally driving the rotary shaft 103, an exhaust control device 108 for exhausting unreacted gas or the like in the reaction furnace 100 is connected. ガス供給管105は、整流板106のほぼ中央部の上方に位置するようにして配設されている。 Gas supply pipe 105 is disposed so as to be positioned above the substantially central portion of the current plate 106.

【0004】従来の気相成長装置は上記のように構成されており、基板101をヒータ104の加熱によって所定温度に上昇させると共に、モータ107の回転駆動によって所定の回転数で回転させ、ガス供給管105から導入した原料ガスやキャリアガスを、整流板106の孔106aを通して基板101上に供給して薄膜を気相成長させる。 [0004] Conventional vapor deposition apparatus is configured as described above, the substrate 101 with increasing to a predetermined temperature by the heating of the heater 104, is rotated at a predetermined rotation speed by the rotation of the motor 107, the gas supply the raw material gas and the carrier gas introduced from the pipe 105, and supplied onto the substrate 101 a thin film vapor phase growth through a hole 106a of the current plate 106.

【0005】 [0005]

【発明が解決しようとする課題】ところで、上記したような整流板106の中央部上方から原料ガスを基板10 [SUMMARY OF THE INVENTION Incidentally, the substrate 10 of the raw material gas from a central portion above the current plate 106 as described above
1上に供給する従来の気相成長装置では、ガス供給管1 In conventional vapor phase growth apparatus for supplying on 1, the gas supply pipe 1
05の下方に位置する整流板106の中央部近傍の孔1 05 holes 1 in the central portion near the rectifier plate 106 is located below
06aからは流速の速いガスが流れ、周面側の孔106 Fast gas stream of flow rate from 06a, the circumferential surface side hole 106
aからは流速の遅いガスが流れる。 It flows slow flow rate gas from a.

【0006】このため、図10に示すように基板101 [0006] Therefore, the substrate 101 as shown in FIG. 10
上に気相成長する薄膜の膜厚は、基板101の中心側の方が外周側より厚くなり、均一な膜厚の薄膜を得ることが困難であった。 The film thickness of the thin film vapor phase growth to top toward the center side of the substrate 101 is thicker than the outer circumferential side, it is difficult to obtain a thin film of uniform thickness.

【0007】本発明は上記した課題を解決する目的でなされ、均一な膜厚の薄膜を気相成長させることができる気相成長装置を提供しようとするものである。 [0007] The present invention seeks to provide a vapor deposition apparatus is made for the purpose of solving the problems described above, a thin film of uniform thickness can be grown in vapor phase.

【0008】[発明の構成] [0008] [the constitution of the invention]

【0009】 [0009]

【課題を解決するための手段】前記した課題を解決するために本発明は、反応炉内に原料ガスを供給し前記反応炉内に配置した基板上に薄膜を気相成長させる気相成長装置において、前記基板と対向して複数の孔を有する整流板を配設すると共に、前記整流板のガス流れ方向上流側に原料ガスもしくは原料ガスとキャリアガスとを導入する複数のガス導入管を配設したことを特徴としている。 The present invention in order to solve the above SUMMARY OF THE INVENTION may, reactor vapor phase growth apparatus for vapor-phase growth of a thin film on a substrate of raw material gas was supplied was disposed in the reaction furnace in, and the substrate and the counter with disposing the rectifying plate having a plurality of holes, a plurality of gas introduction pipe for introducing the raw material gas or the raw material gas and the carrier gas in the gas flow direction upstream side of the rectifier plate arrangement It is characterized in that it has set.

【0010】 [0010]

【作用】本発明によれば、ガス導入管によって反応炉内に導入される原料ガスもしくは原料ガスとキャリアガスは複数のガス導入管により供給されることにより、整流板上でのガスの運動量や圧力分布が均一化されることにより、整流板に形成した孔を通して均一な流速で基板上に供給される。 According to the present invention, by the raw material gas or the raw material gas and the carrier gas introduced into the reactor by the gas inlet pipe is supplied by a plurality of gas inlet pipes, Ya momentum of the gas on the rectifying plate by pressure distribution is made uniform, is supplied onto the substrate at a uniform flow rate through the holes formed in the rectifying plate.

【0011】 [0011]

【実施例】以下、本発明を図示の一実施例に基づいて詳細に説明する。 EXAMPLES The following be described in detail with reference to an embodiment thereof shown in the present invention. 図1は、本実施例に係る気相成長装置を示す概略断面図である。 Figure 1 is a schematic sectional view showing a vapor phase growth apparatus according to the present embodiment.

【0012】この図に示すように、反応炉1内の上部には複数の孔2aが形成されている円盤状の整流板2(図2参照)と、2つのガス導入管3,4が配設されており、反応炉1内の下部には基板5を載置した基板ホルダ6と、基板ホルダ6を回転自在に支持する回転軸7と、 [0012] As shown in this figure, the reactor 1 rectifying plate of the disk-shaped having a plurality of holes 2a are formed in an upper portion of the 2 (see FIG. 2), two of the gas inlet tube 3, 4 arrangement are set, and the substrate holder 6 mounted with the substrate 5 at the bottom of the reactor 1, a rotary shaft 7 for rotatably supporting the substrate holder 6,
基板5と基板ホルダ6を加熱するヒータ8が配設されている。 Heater 8 for heating the substrate 5 and the substrate holder 6 is arranged. また、反応炉1の下部には、回転軸7を回転駆動するモータ9と、反応炉1内の未反応ガス等を排気する排気制御装置10が接続されている。 Further, the lower portion of the reactor 1, a motor 9 for rotating the rotary shaft 7, an exhaust control device 10 is connected for exhausting unreacted gas or the like in the reactor 1.

【0013】整流板2は、石英やステンレス等で形成されており、反応炉1内の内周面に沿って形成した支持台11上に外周面が密接するようにして載置されている。 [0013] rectifying plate 2 is formed of quartz or stainless steel, the outer peripheral surface is mounted so as to close on the support base 11 formed along the inner peripheral surface of the reaction furnace 1.

【0014】ガス導入部3,4は、反応炉1内の上部と整流板2との間に形成される空間に整流板2の上面2b [0014] gas inlet 3 and 4, the upper surface 2b of the current plate 2 in a space formed between the top of the reactor 1 and the rectifying plate 2
と略平行に対向して配設され、反応炉1内に供給されるガス(原料ガス、キャリアガス)が整流板2上で旋回流が形成されるように、先端のガス吹出し口3a,4aは反応炉1の内周面方向に沿って形成されている(図3参照)。 When disposed opposite substantially parallel, gas supplied into the reactor 1 (raw material gas, carrier gas) so that swirling flow is formed on the rectifying plate 2, the tip of the gas blow-out port 3a, 4a It is formed along the inner circumferential surface direction of the reactor 1 (see FIG. 3). また、ガス導入管3,4の外部には、原料ガス(例えばSiH 2 Cl 2 )、キャリアガス(例えばH 2 )をそれぞれ反応炉1内に供給するためのガス供給制御装置(図示省略)が接続されている。 In addition, at the outside of the gas introduction pipe 3,4, the raw material gas (e.g. SiH 2 Cl 2), the gas supply controller for supplying a carrier gas (e.g., H 2) to each reactor 1 (not shown) It is connected.

【0015】本実施例に係る気相成長装置は上記にように構成されており、排気制御装置10で反応炉1内を排気して反応炉内圧力を調整し、ヒータ8の加熱によって基板5を所定温度(例えば1100℃程度)に上昇させると共に、モータ9で回転軸7を回転駆動して基板ホルダ6(基板5)を所定の回転数で回転させ、ガス供給制御装置(図示省略)により原料ガス、キャリアガスをガス導入管3,4から反応炉1内に供給する。 The vapor deposition apparatus according to this embodiment is constructed as above, by evacuating the reactor 1 by the exhaust control device 10 to adjust the reactor pressure, the substrate 5 by heating of the heater 8 together is raised to a predetermined temperature (for example, about 1100 ° C.), and rotates the rotary shaft 7 by the motor 9 rotates the substrate holder 6 (substrate 5) at a predetermined rotational speed, the gas supply controller (not shown) the raw material gas is supplied into the reaction furnace 1 the carrier gas from the gas inlet pipe 3 and 4. ガス導入管3,4のガス吹出し口3a,4aから反応炉1の内周面方向に沿って供給されるガス(原料ガス、キャリアガス)は、整流板2上で整流板2の上面2bに対してほぼ平行な旋回流(図では右回転の旋回流)を形成することによって、ガスの混合状態が良くなり、且つガスの運動量や圧力分布が均一化される。 Gas blow-out port 3a of the gas inlet tube 3 and 4, the gas (raw material gas, carrier gas) supplied along the inner circumferential surface direction of the reactor 1 from 4a is the top surface 2b of the current plate 2 on rectifying plate 2 by forming a substantially parallel swirling flow (swirl flow of right rotation in the figure) for, the better the mixing state of the gas, and momentum and pressure distribution of the gas is made uniform.

【0016】そして、整流板2上で旋回流が形成されているガス(原料ガス、キャリアガス)は、整流板2の孔2aを通して均一な流速で基板5上に供給されることによって、基板5上に半導体薄膜が均一な膜厚で気相成長する(図4参照)。 [0016] Then, gas swirl flow on the rectifying plate 2 is formed (raw material gas, carrier gas), by being supplied on the substrate 5 at a uniform flow rate through the pores 2a of the current plate 2, a substrate 5 semiconductor thin film vapor phase growth with a uniform thickness on top (see Fig. 4).

【0017】この時、基板5上に気相成長する半導体薄膜の膜厚は、図5に示すように、整流板2の開口比(整流板2の上面2b部分の面積に対するすべての孔2aの占める割合)が0.2程度以下(下限値は0.01程度)の場合に基板5上に気相成長される半導体薄膜の膜厚の均一性が良好になることが実験によって分ったので、本実施例では例えば整流板2の開口比を0.1に設定し、また、整流板2の厚さを例えば3mmに形成した。 [0017] At this time, the thickness of the semiconductor thin film vapor phase growth on the substrate 5, as shown in FIG. 5, the rectifying plate 2 opening ratio (of all pores 2a to the area of ​​the upper face 2b portion of the current plate 2 since occupying ratio) that is good uniformity of the film thickness of the semiconductor thin film to be vapor-phase grown on the substrate 5 in the case of about 0.2 or less (the lower limit is about 0.01) was found by experiment in this embodiment sets such as opening ratio of the current plate 2 to 0.1, also to form a thickness of the current plate 2 for example to 3 mm.

【0018】また、反応炉1内の整流板2の上流側に形成される空間の体積をV、ガス導入管3,4から反応炉1内に供給されるガス(原料ガス、キャリアガス)のガス供給量をFとした場合、反応炉1内の上部と整流板2 Further, the volume of space formed upstream of the current plate 2 in the reactor 1 V, gas supplied into the reactor 1 through the gas inlet pipe 3 and 4 (raw material gas, carrier gas) If the gas supply amount was set to F, the upper part of the reaction furnace 1 rectifying plate 2
の間でのガスの切換え時間τ(秒)との間に下記に示した (1)式のような関係がある。 Relationship such as shown in the following equation (1) between the gas switching time in tau (s) between.

【0019】 [0019]

【外1】 [Outside 1]

【0020】そして、上記したガスの切換え時間が1秒程度以下であれば薄膜成長開始時や薄膜成長終了時、ヘテロ界面を形成するような薄膜成長時に整流板2の孔2 [0020] Then, the above-mentioned time film growth starts or thin film growth ends if switching time is less than about one second gas, the rectifying plate 2 during film growth so as to form a hetero interface hole 2
aを通して基板5に供給されるガスの均一性がよくなることが発明者の実験によって分かったので、上記した Since the uniformity of the gas supplied to the substrate 5 through a that is well-known by the inventor of the experiment, and the
(1)式の関係よりV/Fが1(秒)程度以下になるように、反応炉1内の上部と整流板2との間に形成される空間の体積Vを設定すると共に、ガス導入管3,4から供給されるガスの供給量Fをガス供給制御装置(図示省略)によって制御する。 (1) formula to V / F is equal to or less than about 1 (sec.) From the relation, it sets the volume V of the space formed between the top of the reactor 1 and the rectifying plate 2, the gas introduction the supply amount F of the gas supplied from the pipe 3, 4 is controlled by the gas supply control device (not shown).

【0021】また、基板5上に気相成長する半導体薄膜の膜厚の均一性は、図6に示すように、整流板2から基板5までのガス流路の広がりまたは狭まり角度θ(図7 Further, uniformity of the film thickness of the semiconductor thin film vapor phase growth on the substrate 5, as shown in FIG. 6, the spread of the gas flow path from the rectifying plate 2 to the substrate 5 or narrowing the angle theta (Fig. 7
に示した例はガス流路が広がっている場合)が約15° Examples shown in the case where spreading the gas flow path) is about 15 °
以上になると悪くなることが実験によって分ったので、 Since it has been found by experiment that gets worse and becomes equal to or higher than,
ガス流路の広がりまたは狭まり角度θを15°程度以内にする。 Gas flow path spreading or narrowing the angle θ is within about 15 °. 図1に示した本実施例では、ガス流路の広がりまたは狭まり角度θはほぼ0である。 In the present embodiment shown in FIG. 1, is spread or narrowing the angle θ of the gas flow path is substantially zero.

【0022】尚、上記した実施例では、ガス(原料ガス、キャリアガス)を導入する導入管は2つであったが3つ以上用いてもよい。 [0022] In the embodiment described above, the gas (raw material gas, carrier gas) inlet tube for introducing a may be used, but three or more was two. また、整流板は1つであったが、複数枚重ねて用いてもよい。 Also, the rectifying plate is was one, may be a laminate of plurality.

【0023】図8は、本発明の他の実施例に係る気相成長装置の整流板を示す斜視図である。 [0023] FIG. 8 is a perspective view showing the rectifying plate of a vapor growth apparatus according to another embodiment of the present invention. この図に示すように、この整流板20は、複数の孔21aが形成されている円盤状の平板部21の周面に中空状の枠部22を一体的に形成した構成であり、枠部22の内周面には複数の孔22aが形成されている。 As shown in this figure, the rectifier plate 20 is integrally formed with the structure of the hollow frame portion 22 on the circumferential surface of a disc-shaped flat plate portion 21 having a plurality of holes 21a are formed, a frame section the inner peripheral surface 22 has a plurality of holes 22a are formed. また、枠部22内には、2 Also within the frame section 22, 2
つのガス導入管3,4が対向して配設され、枠部22内に供給されるガス(原料ガス、キャリアガス)が旋回流を形成するように、先端のガス吹出し口3a,4aが枠部22内の円周方向に沿って形成されている。 One of the gas inlet tube 3, 4 is disposed opposite the gas (raw material gas, carrier gas) supplied to the frame portion 22 so as to form a swirling flow, the tip of the gas blow-out port 3a, 4a is a frame It is formed along the circumferential direction of the parts 22. 他の構成は上記した実施例と同様である。 Other configurations are the same as the above mentioned embodiments.

【0024】このように、本実施例においても、反応炉1内にガス導入管3,4を介して供給されるガス(原料ガス、キャリアガス)は、まず整流板20の枠部22内で旋回流(図では右回転の旋回流)を形成してガスの混合状態を良くしてから孔22aを通して平板部21上に導入され、平板部21の孔21aを通して均一な流速で基板5上に供給されることによって、基板5上に半導体薄膜が均一な膜厚で気相成長する。 [0024] Thus, also in this embodiment, the gas supplied through the gas inlet pipe 3 and 4 into the reactor 1 (raw material gas, carrier gas) is first within a frame portion 22 of the current plate 20 is introduced onto the flat plate portion 21 through the swirling flow (swirl flow of right rotation in the figure) the formed well to the hole 22a of the mixed state of the gas, on the substrate 5 at a uniform flow rate through hole 21a of the flat plate portion 21 by being supplied, the semiconductor thin film vapor phase growth with a uniform thickness on the substrate 5.

【0025】また、本実施例では、整流板20上流側の外周部より、ほぼ均一なガス供給が行われるため、整流板20上流側でのガス切換時のガス切換状態が良く、かつ孔22aより供給されるガス流速を低減できるため、 Further, in this embodiment, the outer peripheral portion of the straightening vane 20 upstream, for substantially uniform gas supply is performed, the current plate 20 may have a gas switching state of the gas switching on the upstream side, and the hole 22a it is possible to reduce the gas flow rate is more supplied,
ガス供給の再現性が良い。 Reproducibility of the gas supply is good.

【0026】なお、整流板としては、周知の多孔質体(多孔質金属や燃結多孔体)や微細な粒体(ガラス玉のようなもの)を充填して充填層を持たせたもの等を用いることができる。 [0026] As the current plate, such as those which gave a known porous material (porous metallic or 燃結 porous body) or packed bed filled with a fine granular (like marbles) it can be used. さらに開口比が0.2よりも大きな整流板を複数重ねて実質的に開口比を0.2以下程度にして利用することもできる。 Furthermore the aperture ratio is substantially open ratio superimposed plurality of large current plate than 0.2 may be utilized in the degree 0.2.

【0027】 [0027]

【発明の効果】以上、実施例に基づいて具体的に説明したように本発明によれば、整流板上に原料ガスもしくは原料ガスとキャリアガスを複数のガス導入口より導入することにより、ガスの運動量や圧力分布が均一化される。 Effect of the Invention] According to the invention as specifically described based on examples, by introducing the raw material gas or the raw material gas and a carrier gas from a plurality of gas inlets on the rectifying plate, gas momentum and pressure distribution is made uniform. 従って、基板上には整流板に形成した孔を通して均質なガスが均一な流速で供給されることによって均一な膜厚の薄膜を気相成長させることができる。 Therefore, on the substrate a thin film of uniform thickness by homogeneous gas is supplied at a uniform flow rate through the holes formed in the rectifying plate can be vapor-phase growth. また、ガスの切換時のガス切換状態も良く、かつガス供給の再現性も良い。 It is also possible gas switching state of the switching gases, and may be the reproducibility of the gas supply.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の一実施例に係る気相成長装置を示す概略図である。 It is a schematic diagram showing a vapor phase growth apparatus according to an embodiment of the present invention; FIG.

【図2】本発明の一実施例に係る気相成長装置の整流板を示す斜視図である。 Is a perspective view showing the rectifying plate of a vapor growth apparatus according to an embodiment of the present invention; FIG.

【図3】本発明の一実施例に係る気相成長装置の上部を示す断面図である。 It is a cross-sectional view showing the upper portion of the vapor phase growth apparatus according to an embodiment of the present invention; FIG.

【図4】本発明の一実施例に係る気相成長装置による気相成長時の基板面内膜厚分布を示した図である。 4 is a diagram showing a substrate in-plane film thickness distribution during vapor deposition by vapor deposition apparatus according to an embodiment of the present invention.

【図5】整流板の開口比と基板面内膜厚均一性の関係を示した図である。 5 is a diagram showing the relationship between the opening ratio and the substrate plane thickness uniformity of the current plate.

【図6】ガス流路角度と基板面内膜厚均一性の関係を示した図である。 6 is a diagram showing the relationship between the gas flow path angle and the substrate plane thickness uniformity.

【図7】ガス流路が広がっている気相成長装置を示す概略図である。 7 is a schematic diagram showing a vapor deposition apparatus a gas flow path extends.

【図8】本発明の他の実施例に係る気相成長装置の整流板を示す斜視図である。 Is a perspective view showing the rectifying plate of a vapor growth apparatus according to another embodiment of the present invention; FIG.

【図9】従来の気相成長装置の一例を示す概略図である。 9 is a schematic diagram showing an example of a conventional vapor phase growth apparatus.

【図10】従来の気相成長装置による気相成長時の基板面内膜厚分布を示した図である。 10 is a diagram showing a substrate in-plane film thickness distribution during vapor deposition due to conventional vapor phase growth apparatus.

【符号の説明】 DESCRIPTION OF SYMBOLS

1 反応炉 2,20 整流板 2a,21a 孔 3,4 ガス導入管 5 基板 6 基板ホルダ 7 回転軸 8 ヒータ 9 モータ 10 排気制御装置 1 reactor 2, 20 rectifying plate 2a, 21a hole 3,4 gas inlet pipe 5 substrate 6 substrate holder 7 rotation axis 8 heater 9 motor 10 exhaust control device

Claims (2)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 反応炉内に原料ガスを供給し前記反応炉内に配置した基板上に薄膜を気相成長させる気相成長装置において、前記基板と対向して複数の孔を有する整流板を配設すると共に、前記整流板のガス流れ方向上流側に原料ガスもしくは原料ガスとキャリアガスとを導入する複数のガス導入管を配設したことを特徴とする気相成長装置。 1. A vapor phase growth apparatus for vapor phase growing a thin film on a substrate having a raw material gas was supplied disposed in said reaction furnace into the reactor, a current plate having a plurality of holes in the substrate and the counter together arranged, vapor deposition apparatus characterized by being arranged a plurality of gas introduction pipe for introducing the raw material gas or the raw material gas and the carrier gas in the gas flow direction upstream of the flow regulating plate.
  2. 【請求項2】 前記複数のガス導入管は、前記整流板のガス流れ方向上流側に前記原料ガスもしくは原料ガスとキャリアガスとの旋回流を形成するように配設したことを特徴とする請求項1記載の気相成長装置。 Wherein said plurality of gas inlet pipes, claims, characterized in that arranged so as to form a swirling flow of the raw material gas or the raw material gas and the carrier gas in the gas flow direction upstream side of the rectifier plate vapor phase growth apparatus of claim 1, wherein the.
JP9221091A 1991-04-23 1991-04-23 Vapor-phase growth method and apparatus Expired - Lifetime JP3184550B2 (en)

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JP9221091A JP3184550B2 (en) 1991-04-23 1991-04-23 Vapor-phase growth method and apparatus

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Application Number Priority Date Filing Date Title
JP9221091A JP3184550B2 (en) 1991-04-23 1991-04-23 Vapor-phase growth method and apparatus

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JPH0750260A true true JPH0750260A (en) 1995-02-21
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0849775A2 (en) * 1996-12-19 1998-06-24 Toshiba Ceramics Co., Ltd. Vapor deposition apparatus and vapor deposition method
US6059885A (en) * 1996-12-19 2000-05-09 Toshiba Ceramics Co., Ltd. Vapor deposition apparatus and method for forming thin film

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0849775A2 (en) * 1996-12-19 1998-06-24 Toshiba Ceramics Co., Ltd. Vapor deposition apparatus and vapor deposition method
EP0849775A3 (en) * 1996-12-19 1999-04-28 Toshiba Ceramics Co., Ltd. Vapor deposition apparatus and vapor deposition method
US6059885A (en) * 1996-12-19 2000-05-09 Toshiba Ceramics Co., Ltd. Vapor deposition apparatus and method for forming thin film

Also Published As

Publication number Publication date Type
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