CN107306473B - A kind of semiconductor processing device and the method for handling substrate - Google Patents
A kind of semiconductor processing device and the method for handling substrate Download PDFInfo
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- CN107306473B CN107306473B CN201610259760.3A CN201610259760A CN107306473B CN 107306473 B CN107306473 B CN 107306473B CN 201610259760 A CN201610259760 A CN 201610259760A CN 107306473 B CN107306473 B CN 107306473B
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
Abstract
The present invention provides a kind of plasma processing apparatus and substrate production method, wherein including reaction cavity, wherein the insulating materials window that at least partly top plate of the reaction cavity is made of insulating material.Substrate supporting device is set to the lower section of the insulating materials window in the reaction cavity.Radio-frequency power emitter is located above the insulating materials window, is entered in the reaction cavity with emitting radio-frequency power across the insulating materials window.Reactant gas injector is used to supply reaction gas into the reaction chamber；Several current-carrying gas injectors are set below the reactant gas injector, for injecting the current-carrying gas of certain flow rate into reaction chamber, flow velocity size by adjusting the current-carrying gas can effectively change the restraining force size of diffusion of the current-carrying gas to reaction gas, and then control the needs of different distributions of the reaction gas in the reaction chamber are to meet different process.
Description
Technical field
The present invention relates to semiconductor processing devices, more particularly to the uniform heating technology field of semiconductor processing device.
Background technique
Semiconductor processing device is commonly known in the art, and it is aobvious to be widely used in semiconductor integrated circuit, plate
Show device, light emitting diode (LED), in the process industry of solar battery etc..One type plasma processing apparatus is partly to lead
Important component in body processing unit would generally apply at least one radio-frequency power supply in plasma processing apparatus to produce
It gives birth to and maintains plasma in reaction chamber.Wherein, apply radio-frequency power there are many different modes, each different modes are set
Meter all will lead to different characteristics, such as the dissociation of efficiency, plasma, homogeneity etc..Wherein, a kind of design is inductive coupling
(ICP) plasma chamber.
In inductively coupled plasma processing chamber, radio frequency power source is usually via the antenna of a coiled type into reaction chamber
Emit RF energy.In order to be coupled to the radio-frequency power from antenna in reaction chamber, an insulating materials is placed at antenna
Window.Reaction chamber can handle various substrates, such as silicon chip etc., and substrate is fixed on chuck, and plasma produces above substrate
It is raw.Therefore, antenna is placed on above reactor top plate, so that reaction chamber top plate is made of insulating material or including one
Insulating materials window.
In plasma processing chamber, various reaction gas are injected into reaction chamber, so that between ion and substrate
Chemical reaction and/or physical action can be used for forming various feature structures on the substrate, such as etching, deposition etc..
In many process flows, a critically important index is the processing homogeneity inside substrate.It is, one acts on substrate
The process flow of central area should be identical with the process flow for acting on substrate edge region or highly close.Thus, for example,
When executing process flow, the etching rate in substrate center region should be identical as the etching rate in substrate edge region.
Fig. 1 shows a kind of sectional view of existing inductively coupled plasma precursor reactant chamber design.ICP reaction chamber 100 includes
Substantially cylindrical metal sidewall 105 and insulation top plate 107, composition can be evacuated the airtight space that device 125 vacuumizes.Base
Seat 110 supports chuck 115, and the chuck 115 supports substrate 120 to be processed.Radio-frequency power quilt from radio frequency power source 145
It is applied to the antenna 140 in coiled type.Reaction gas from gas source 150 is supplied in reaction chamber by pipeline 155, with point
Plasma is fired and maintained, and thus substrate 120 is processed.In standard inductance coupling reaction chamber, gas is by reacting
One of injector/spray head 130 and intermediate spray head 135 around chamber or both inject together to be supplied in vacuum tank
's.
The central area that gas in order to prevent from peripheral spray head 130 not yet reaches substrate 120 has been extracted reaction
Chamber in the Chinese patent of Publication No. CN102355792A, discloses a kind of adjusting reaction chamber reaction gases and free radical point
The technical solution of cloth, by the way that a baffle 170, the setting of 170 central area of baffle are arranged between peripheral spray head 130 and pedestal 110
Opening, baffle can extend Dissociation path of the reaction gas in reaction chamber, improve the dissociation efficiency of reaction gas, while effectively
The distribution of free radical in reaction chamber is had adjusted, so that the distribution of free radical can be realized the uniform treatment to substrate.
However, such as Bosch technique, etch step and deposition step alternate cycles carry out, heavy in certain etching technics
The free radical to play a major role in product step is replaced status in etch step by charged particle.Due to charged particle and free radical
Distribution it is different, realize that the baffle 170 of substrate uniform deposition is etching by control free radical distribution in depositing operation
Being uniformly distributed for charged particle may be adversely affected in technique, i.e. the beneficial effect in deposition step of baffle 170 is bright
Aobvious, in etch step, then effect is unobvious.Ideally, baffle can be set in deposition step, moved in etch step
Baffle out, but in actual process, since respectively the duration is shorter for deposition step and etch step, switching rate is more demanding,
Frequently moves in and out process components not only and can greatly increase the operation difficulty of equipment, it can also be to bringing a large amount of in reaction chamber
Grain pollutant, it is considered to be undesirable mode.
Further, since the openings of sizes of baffle influences difference to the distribution of plasma in reaction chamber, it is contemplated that different bases
The etching area of piece is different, and the Spreading requirements of plasma are different, in order to adapt to the substrate etching of different process, needs to be arranged
The baffle of different openings size, but, reason is described above, and different baffles moves in and out reaction chamber not only and will increase design hardly possible
Degree, while pollution can be brought to reaction chamber, reduce the qualification rate and efficiency of product.
Therefore, it needs a kind of improvement inductive coupling reaction chamber to design in the industry, can be needed to adjust equity according to different process
The distributed controll of free radical and charged particle in gas ions.
Summary of the invention
To solve the above-mentioned problems, the invention discloses a kind of semiconductor processing devices, comprising: by top plate and reaction chamber side
The reaction chamber for the sealing that wall surrounds；Substrate supporting device is set to below the insulating materials window in the reaction chamber；With
In support clamping of the realization to substrate in process treatment process；Radio-frequency power emitter, the side of being arranged on the top plate,
To emit in RF energy to the reaction chamber；Reactant gas injector is used to supply reaction gas into the reaction chamber；
Current-carrying gas injector is set to below the reactant gas injector, and the current-carrying gas injector connects a gas control
Device processed, the flow velocity of the Gas controller control current-carrying gas through current-carrying gas injector injection reaction chamber.
Preferably, the reactant gas injector includes the peripheral spray head being arranged on the reaction chamber side wall and/or sets
Set the central jets on the top plate.Reaction gas, which can choose from one of peripheral spray head or central jets, injects reaction chamber,
Also it can choose while injecting reaction chamber from peripheral spray head or central jets.
Preferably, the current-carrying gas is the nonreactive gas for being not involved in the reaction gas reaction.
Preferably, the current-carrying gas injector is arranged on the reaction cavity side wall.The current-carrying gas injector
It can be the gas via-hole being arranged on reaction chamber side wall, or through the reaction chamber side wall and to the center of reaction chamber
The gas tip of region extension certain length.
Preferably, ring baffle of the setting one with middle opening, the current-carrying gas below the reactant gas injector
Body injector is the gas via-hole through the reaction cavity side wall and the ring baffle.
Preferably, the current-carrying gas injector is in spoke along the radial direction of the ring baffle in the baffle interior
Penetrate shape distribution.
Preferably, at least part of radial direction for deviateing the ring baffle of the current-carrying gas injector is through described
The annular section of ring baffle is realized in the irregular distribution of the baffle interior, it is therefore intended that is adjusting reaction gas in institute
State asymmetric distribution on circumferencial direction.
Preferably, the internal diameter of several current-carrying gas injectors includes one or more size.Pass through setting
The internal diameter of current-carrying gas injector is that identical or different be uniformly distributed or unevenly in the radial direction to reaction gas may be implemented
Distribution.
Preferably, the current-carrying gas injector is connected by the Gas controller with a current-carrying gas source.The gas
Body controller is gas flow controller, and the gas flow controller can control the current-carrying gas into current-carrying gas injector
The flow velocity size and switch on and off of body.
Further, invention additionally discloses a kind of plasma processing apparatus, wherein includes:
Reaction cavity, including the reaction chamber of the sealing surrounded by top plate and reaction chamber side wall, the top plate constitutes insulation material
Expect window；
Substrate supporting device is set to below the insulating materials window in the reaction chamber；
Radio-frequency power emitter is set to above the insulating materials window, to emit RF energy to the reaction
It is intracavitary；
Reactant gas injector is used to supply reaction gas into the reaction chamber；
Current-carrying gas injector is set to below the reactant gas injector, is used for the reaction chamber center side
To the current-carrying gas of injection certain flow rate, the current-carrying gas with certain flow rate is formed in reaction chamber to reaction chamber center position
Extend the annular air curtain of certain distance, the annular air curtain limits diffusion of the reaction gas in reaction chamber.
The flow velocity of the distance that extends to center position of annular air curtain and the current-carrying gas is positively correlated function.
Further, the invention also discloses a kind of method for manufacturing semiconductor chip, the method is described above
It carries out, includes the following steps: in plasm reaction cavity
Substrate to be processed is placed on the substrate supporting device；
Reaction gas is provided into the reaction chamber by the reactant gas injector, while starting radio-frequency power transmitting
The reaction gas is dissociated into plasma by device；
The current-carrying gas of certain flow rate is injected into the reaction chamber by the current-carrying gas injector；The current-carrying gas
For body to limit reaction gas diffusion in the horizontal direction, the current-carrying gas flow velocity is higher to form the reaction gas
Restraining force it is bigger；
The current-carrying gas flow velocity in the current-carrying gas injector is adjusted to change the reaction gas in reaction chamber
Distribution.
Preferably, the substrate be silicon chip, the method includes alternately etch step and deposition step, it is described
Current-carrying gas injector described in etch step injects the current-carrying gas flow velocity in reaction chamber lower than current-carrying gas in deposition step
Flow velocity.
Preferably, the current-carrying gas flow velocity injected in reaction chamber in the etch step is more than or equal to 0.
The present invention has the advantages that a gas limits device, institute is arranged below reactant gas injector in reaction chamber
Stating gas limits device includes several current-carrying gas injectors, for injecting the current-carrying gas of certain flow rate into reaction chamber, is led to
The flow velocity size for overregulating the current-carrying gas can effectively change the restraining force size of diffusion of the current-carrying gas to reaction gas,
It is equivalent to the opening diameter size for changing gas limits device.Control is easier since the flow velocity of current-carrying gas is one
Therefore parameter is distributed reaction gas by the flow velocity realization that control current-carrying gas enters reaction chamber in the reaction chamber
Control.It solves the problems, such as that the gas limits device of different openings can not be provided for different process in the prior art.
Detailed description of the invention
The a part of attached drawing as description of the invention illustrates the embodiment of the present invention, and explains together with specification
With illustrate the principle of the present invention.Attached drawing diagrammatically explains the main feature of citing embodiment.Attached drawing is not intended to retouch
All features of practical embodiments are stated without the relative size between the element in explanatory diagram, nor scaling relative to.
Fig. 1 is the sectional view of the inductively coupled plasma precursor reactant chamber of the prior art；
Fig. 2 is the sectional view of the inductively coupled plasma precursor reactant chamber of the embodiment of the present invention；
Fig. 3 shows current-carrying gas to the action principle schematic diagram of vertical direction reaction gas；
Fig. 4 shows the attenuation curve figure of the corresponding reaction gas of three kinds of Reynolds numbers in the X direction；
Fig. 5 is the sectional view of another embodiment of the present invention inductively coupled plasma precursor reactant chamber.
Specific embodiment
Semiconductor chip is manufactured the invention discloses a kind of inductance coupling plasma processing device and in described device
Method.Technical solution of the present invention is dedicated to obtaining the substrate etching having good uniformity as a result, being suitable for etch step
With the Bosch technique and other techniques for needing the distribution of plasma to be in process adjusted of deposition step alternately.
Apparatus and method of the present invention is described in detail below in conjunction with specific embodiments and the drawings.
Technical staff determines that the principal element of substrate processing uniformity is plasma the study found that in etching technics
The distribution of middle charged particle and free radical, reaction gas dissociated under the action of radio-frequency power formation plasma be one at
Divide complicated substance, both include the reaction gas not dissociated, also includes neutral free radical and the particle of electrification etc..Wherein charge
Particle has directionality under the action of bias power, mainly carries out bombardment etching to substrate in etching technics；Middle free love
Base mainly passes through chemical reaction and performs etching reaction or deposition reaction, the higher region etch of number of free radical in etching technics
Reaction or deposition reaction rate are faster.
It is found in actual process, the distribution of free radical by the reaction gas for generating plasma in addition to being distributed in reaction chamber
It is also influenced by the free radical consumed in reacting outside influencing.Plasma is carried out to substrate in inductance coupling plasma processing device
When body processing, since substrate edge to the region between reaction chamber side wall is without etching technics, the plasma in this region disappears
Less, the free radical bulk deposition in plasma is consumed, so that close to number of free radical around the substrate edge region in the region
It is much higher than the number of free radical in substrate center region, and then the etch rate in substrate edge region is caused to be much higher than in substrate
The etch rate in heart district domain.
In order to constrain the reaction gas distribution in reaction chamber, while in order to realize the screening to substrate edge region
Gear, in inductive coupling reaction chamber shown in fig. 1 design, baffle of the setting one with central opening as gas limits device,
The baffle, which can be guided, to be flowed through the reaction gas of peripheral spray head 130 injection to central area, and the central opening of setting is utilized
Adjust the distribution of reaction gas reaction gas before reaching substrate surface.The distribution of free radical especially in reaction gas, together
When, there is the baffle of opening by being arranged, substrate edge region is blocked in realization, so that the free radical for reducing fringe region is dense
Degree, and then reduce the etch rate in substrate edge region.
In concrete technology, at least there are the following problems for the use of baffle: in the technique of Bosch method etching silicon chip, gear
Plate well control the uniformity that can greatly improve substrate processing in deposition step due to that can be distributed to free radical, but
In etch step, the charged particle distribution in baffle meeting plasma generates adverse effect, is unfavorable for base in etch step
Piece working process.In addition to this, since the etching area of substrates of different is different, the free radical distribution in reaction chamber is influenced not
Together, concrete principle are as follows: when substrate etching area is smaller, free radical consumes less, central area and fringe region in reaction chamber
Free radical be easy to keep relatively uniform distribution in reaction chamber；When substrate etching area is larger, since central area is carved
The free radical that erosion reaction needs to participate in is more, and fringe region causes herein since the free radical of the etching smaller consumption of area is less
Number of free radical quickly increases, and for the uniformity for guaranteeing Substrate treatment, the etching biggish substrate of area needs opening size smaller
Baffle so as to can to substrate edge region carry out larger area block.Therefore, even if being both in deposition step, difference is carved
The baffle that the substrate of erosion area also wishes to different size openings is controlled.To solve the above-mentioned problems, ideally,
It is different by the openings of sizes that baffle is arranged, it may be implemented to carry out the substrate with different etching area uniform treatment or to same
The different procedure of processings of one substrate carry out uniform treatment.Such as in Bosch technique, appropriate openings size is placed in deposition step
Baffle in reaction chamber, the one biggish baffle of opening of the baffle or replacement is taken out in etch step.However in practical work
In work, since the alternating speed of deposition step and etch step is exceedingly fast in Bosch technique, the speed of 1s is usually even less than with 1s
Alternate cycles, therefore can not be achieved baffle and frequently moved in and out in reaction chamber.In addition, to meet the quarter of substrates of different
Erosion needs to make the baffle of a variety of different size openings, not only greatly improves the processing cost of equipment, can also extend substrate processing
Duration reduces the applicability of equipment.Therefore, different etching technique is not able to satisfy by way of baffle is arranged to open different sizes
The demand of mouth baffle.
In order to solve the above-mentioned technical problem, the present invention designs a kind of inductively coupled plasma precursor reactant chamber (ICP reaction chamber),
Fig. 2 shows the sectional views of ICP reaction chamber according to a first embodiment of the present invention.ICP reaction chamber 200 includes metal sidewall 205
With insulation top plate 207, an airtight vacuum reaction cavity is constituted, and vacuumized by vacuum pumping pump 225.The insulation top plate
207 only as an example, can also be using other top plate patterns, such as dome shape, the metal roof with insulating materials window
Plate etc..Pedestal 210 supports chuck 215, is placed substrate 220 to be processed on the chuck.Bias power is applied to described
On chuck 215, but due to unrelated with the embodiment of the present invention of exposure, it is not shown in Fig. 2.The radio-frequency power supply 245 is penetrated
Frequency power is applied to antenna 240, which is substantially coiled type.
Reaction gas is supplied in reaction chamber from reacting gas source 250 by pipeline 225, under the action of RF energy
Plasma is lighted and maintains, to process to substrate 220.In the present embodiment, reaction gas passes through peripheral injector
Or spray head 230 is supplied in vacuum space, but additional gas also the property of can choose slave central jets 235 inject reaction
Chamber.If gas is supplied simultaneously from injector 230 and spray head 235, each gas flow can independent control.Any of these use
It can be described as reactant gas injector in the setting of injection reaction gas.In Fig. 2, baffle 270 is set in reaction chamber to limit
And/or guidance distributes the gas flowing from gas tip 230.With reference to the accompanying drawings shown in label, baffle is basic in the above-described embodiments
It is the disc of middle with hole or opening.The baffle is located at below gas tip but above substrate position.In this way,
Gas is restricted to further flow towards among reaction chamber before being downwardly towards substrate, as indicated by a dashed arrow in the figure.
Normally, the baffle 270 can be made of metal material, such as the aluminium of anodization.Baffle is manufactured with metal material
It can be conducive to limit the plasma above the baffle, because the RF energy from coil is passed by the baffle
It broadcasts.On the other hand, the baffle 270 is also possible to be made of insulating material, such as ceramics or quartz.Using insulation barrier
In embodiment, radio frequency (RF) energy from coil can pass through the baffle, plasma is maintained at described
Below baffle (dotted portion is shown), dependent on the gas flow reached below the baffle.
A kind of gas limitation that dynamic adjustment can be carried out to the distribution of reaction gas is set in the present embodiment, in reaction chamber
Device, specifically, being realized by several current-carrying gas injectors 275 of baffle 270 and the inside that baffle 270 is arranged in.
Current-carrying gas injector 275 is the gas via-hole along ring baffle radial direction through setting, close to reaction chamber side wall 205
One end by the way that the gas via-hole of reaction chamber interior and 260 phase of current-carrying gas source being arranged in outside reaction chamber side wall is arranged in
Connection, the interior storage in current-carrying gas source 260 is not involved in the gas of technological reaction in reaction chamber, such as Ar, N2Deng.Current-carrying gas injector
275 other end is the opening being arranged on baffle openings section.The current-carrying gas that current-carrying gas source 260 exports can be through a gas
Member control apparatus such as gas flow controller (MFC) 265 enters current-carrying gas injector 275, and gas flow controller 265 can be with
Current-carrying gas in control current-carrying gas source 260 is injected into reaction chamber with certain flow rate through current-carrying gas injector 275.Work as load
When flowing the current-carrying gas that air injector 275 exports has certain flow rate, current-carrying gas can be along the opening section for changing shape baffle
Form the annular air curtain for extending certain distance to reaction chamber center position.The annular air curtain that the current-carrying gas is formed is to through its ring
The shape reaction gas that Open Side Down flows and plasma form certain restrictions constraint, limit the reaction gas and plasma
Diffusion in the reaction chamber.The distance and the current-carrying gas that the annular air curtain extends to center position inject reaction chamber
Flow velocity correlation, the current-carrying gas flow velocity of 275 delivery outlet of current-carrying gas injector is higher, the pact that annular air curtain is formed
Beam is open, and bore is smaller, and the restraining force formed to reaction gas and plasma is bigger, is equivalent to and reduces the interior of baffle openings
Diameter.Therefore by control current-carrying gas inject reaction chamber flow velocity, can dynamic regulating fender opening size, to meet difference
The demand of technique.It is realized by adjusting the restraining force that current-carrying gas generates and the dynamic of 270 openings of sizes of baffle is adjusted.It is different from
Current-carrying gas injector 275 is arranged along the radial direction of baffle 270 in good fortune strip in the present embodiment, in other embodiment
In, current-carrying gas injector 275 can be set to deviate radial direction setting, for example, current-carrying gas injector can be in baffle
Inside it is arranged in the shape of a spiral, so that the current-carrying gas in injection reaction chamber is in vortex shape distribution.Current-carrying gas injector 275 can also
It is set as being randomly distributed with part, radially non-uniform reaction gas is adjusted with realizing.
Fig. 3 shows current-carrying gas to the action principle schematic diagram of vertical direction reaction gas.ICP reaction shown in Fig. 2
Intracavitary, the reaction gas and plasma injected in reaction chamber through peripheral spray head 230 and central jets 235 is required by baffle
Opening 271 on 270 gets to substrate surface.Therefore, peripheral spray head and the reaction gas of central jets outflow can be along Fig. 3
Shown in y-axis direction flow downward, during flowing downward, since gas has the characteristic of diffusion, reaction gas can be to
It is diffused from all directions.When reaction gas flows downward by the opening 271 of baffle, the current-carrying gas of setting in baffle 270
Current-carrying gas in body injector 275 is sprayed along the opposite direction of X-axis shown in Fig. 3 with certain flow rate, to the reaction in Y direction
Gas carries out impulsive constraints.As long as setting of the current-carrying gas injector 275 inside baffle 270 is intensive enough, it can generate
The similar the same effect of baffle is effectively limited distribution of the reaction gas in Y direction in X-axis.Specifically, in Fig. 3
Shown in schematic diagram, the reaction gas flow velocity being arranged in Y direction is Va(x), the current-carrying gas flow velocity in X-direction is set
For Vb, influenced by the current-carrying gas impact in X-direction, Va(x) and VbBetween there are following relationships:
Va(x)∝Va0*e(-Reb*x/d)
Wherein, x is the diffusion length of reaction gas in the X-axis direction, and d is the diameter of current-carrying gas injector 275, Re generation
The Reynolds number of table current-carrying gas flow velocity, Reynolds number mean more greatly current-carrying gas flow velocity VbIt is bigger, as X=0, Va(x)=
Va0.Based on above-mentioned relation it is found that the diffusion of reaction gas in the X direction is mainly applied to current-carrying gas injector 275
The diameter limitation of the Reynolds number and current-carrying gas injector of interior current-carrying gas.Uniform reaction gas distribution in order to obtain,
The diameter that current-carrying gas injector 275 can be set is identical；It is radial uneven to need deliberately to be arranged reaction gas in certain techniques
It is even, therefore the diameter that current-carrying gas injector can be set is different.
Fig. 4 illustratively lists the attenuation curve figure of the corresponding reaction gas of three kinds of Reynolds numbers in the X direction.Work as thunder
When Nuo Zi number=1.9, decaying of the reaction gas in X-axis is very slow, or even at x=150mm, reaction gas flow velocity only declines
It is kept to 15% or so, this illustrates that current-carrying gas is smaller to the percussion of reaction gas, and the opening of constraint is formed to reaction gas
It is larger.When Reynolds number=19, at x=40mm, the flow velocity of reaction gas almost decays to 0, i.e., in Reynolds number=19
When, current-carrying gas is equivalent to the confinement ring to form that an opening diameter is 80mm.When Reynolds number rises to 190, reaction gas
Body flow rate attenuation fast speed decays to 0 at x=10mm, and when illustrating Reynolds number=190, current-carrying gas is to reaction gas
Body forms the confinement ring that an opening diameter is 20mm.
Based on above-mentioned relation it is found that by adjusting current-carrying gas flow velocity, 275 shape of baffle 270 and current-carrying gas injector
At gas limits device generate constraint can become larger or reduce, the current-carrying gas flow velocity of setting is higher, current-carrying gas
The Reynolds number in 275 exit of injector is bigger, and the limitation opening that the homologation reaction gas that gas limits device generates passes through is got over
It is small.The adjustable limitation opening diameter range of gas limits device is greater than zero, less than or equal to the diameter of baffle 270.Work as current-carrying
When the flow velocity of gas is zero, it is equivalent to the effect of only baffle, in order to improve the dynamic regulation range of gas limits device, this reality
It applies and being relatively large in diameter for baffle 270 can be set in example.
For the dynamic regulation range of larger range of regulating gas limits device, Fig. 5 shows the ICP of another embodiment
Reaction chamber structural schematic diagram.It is roughly the same that cavity configuration is reacted in the present embodiment in the structure with embodiment illustrated in fig. 2 of reaction chamber, is
Description is succinct, and identical component uses identical number system, and original " 2xx " series is only adjusted to " 3xx " series.With it is upper
State embodiment the difference is that, be not provided with baffle in the present embodiment, current-carrying gas injector 372 is to be set up directly on reaction
Gas via-hole on chamber side wall, in a further embodiment, current-carrying gas injector are through the reaction chamber side wall and to anti-
The central area of chamber is answered to extend the gas nozzle of certain distance.Current-carrying gas injector 372 is used for will be in current-carrying gas source 360
Current-carrying gas is in certain speed injection to reaction chamber, to the reaction gas flowed out from central jets 335 and peripheral spray head 330
The diffusion of body in the horizontal direction is limited.It is former that the current-carrying gas injector 372 of the present embodiment carries out limitation to reaction gas
Reason and regulative mode are same as the previously described embodiments, and details are not described herein again, by using the current-carrying gas injector 372 of the present embodiment
The annular air curtain of formation can form constraint bore opening diameter range and be greater than 0 radius for being less than or equal to reaction chamber, can satisfy
The demand of more different etching techniques.
The annular air curtain disclosed by the invention formed using certain flow rate current-carrying gas is in addition to can be to anti-on vertical direction
It answers outside gas limited, the guidance of horizontal direction can also be carried out to the reaction gas that peripheral spray head injects, by reacting
Intensive current-carrying gas injector is set on chamber side wall, and it is certain to keep the current-carrying gas exported in current-carrying gas injector to have
Flow velocity can form an annular gas barrier in the horizontal direction, both be able to achieve the effect of the guidance air-flow of baffle, also can be under it
The substrate edge region of side is covered, and therefore, the present invention had both been remained using the annular air curtain that current-carrying gas injector is formed
The beneficial effect of baffle, and the dynamic regulation to limitation opening is realized, so as to meet different step pair in Bosch technique
Gas limits different the requiring of the different requirements and different etching substrate of openings of sizes to gas limitation openings of sizes.
Current-carrying gas injector 372 or current-carrying gas injector 275 of the invention can pass through gas flow controller
365 are connected with current-carrying gas source, therefore, it may be convenient to which the rate of current-carrying gas injection reaction chamber is adjusted.According to upper
Therefore text description, the diameter negative correlation that the flow velocity and current-carrying gas of current-carrying gas form constraint to reaction gas pass through
Gas flow controller can be accurately controlled the gas flow rate in adjustment current-carrying gas injection reaction chamber, thus can be accurately real
Dynamic regulation of the about beam diameter of existing annular air curtain in each size.
In addition, those skilled in the art can be easy by the understanding to description of the invention and to practice of the invention
Other implementations are expected on ground.In multiple embodiments described herein various aspects and/or component can individually be used or
Person, which combines, to be used.It is emphasized that description and embodiments are only as an example, under the actual range of the present invention and thinking pass through
The claim in face defines.
Claims (21)
1. a kind of plasma processing apparatus, wherein include:
Reaction cavity, including the reaction chamber of the sealing surrounded by top plate and reaction chamber side wall, the top plate constitutes insulating materials window；
Substrate supporting device is set to below the insulating materials window in the reaction chamber；
Radio-frequency power emitter is set to above the insulating materials window, to emit in RF energy to the reaction chamber；
Reactant gas injector is used to supply reaction gas into the reaction chamber；
Current-carrying gas injector is set to below the reactant gas injector, and the current-carrying gas injector connects a gas
Body controller, the flow velocity of the Gas controller control current-carrying gas through current-carrying gas injector injection reaction chamber.
2. plasma processing apparatus according to claim 1, which is characterized in that the current-carrying gas is described to be not involved in
The nonreactive gas of reaction gas reaction.
3. plasma processing apparatus according to claim 1, which is characterized in that the current-carrying gas injector is setting
Gas via-hole on the reaction cavity side wall.
4. plasma processing apparatus according to claim 1, which is characterized in that the current-carrying gas injector be through
The reaction cavity side wall and the gas nozzle for extending a distance into reaction chamber.
5. plasma processing apparatus according to claim 1, which is characterized in that set below the reactant gas injector
A ring baffle for having middle opening is set, the current-carrying gas injector is through the reaction cavity side wall and the annular
The gas via-hole of baffle.
6. plasma processing apparatus according to claim 5, which is characterized in that the current-carrying gas injector is described
Baffle interior is radially distributed along the radial direction of the ring baffle.
7. plasma processing apparatus according to claim 5, which is characterized in that the current-carrying gas injector at least portion
Point the radial direction of the deviation ring baffle run through the annular section of the ring baffle, realize the baffle interior not
The distribution of rule.
8. plasma processing apparatus described in any one of -7 according to claim 1, which is characterized in that several current-carrying gas
The internal diameter of body injector is set as one or more size.
9. plasma processing apparatus according to claim 1, which is characterized in that the current-carrying gas injector passes through institute
It states Gas controller to be connected with a current-carrying gas source, the Gas controller is gas flow controller, the gas flow control
Device processed can control the flow velocity size and switch on and off into the current-carrying gas of current-carrying gas injector.
10. a kind of plasma processing apparatus, wherein include:
Reaction cavity, including the reaction chamber of the sealing surrounded by top plate and reaction chamber side wall, the top plate constitutes insulating materials window；
Substrate supporting device is set to below the insulating materials window in the reaction chamber；
Radio-frequency power emitter is set to above the insulating materials window, to emit in RF energy to the reaction chamber；
Reactant gas injector is used to supply reaction gas into the reaction chamber；
Current-carrying gas injector is set to below the reactant gas injector, for infusing to the reaction chamber center position
Enter the current-carrying gas of certain flow rate, the current-carrying gas with certain flow rate is formed in reaction chamber to be extended to reaction chamber center position
The annular air curtain of certain distance, the annular air curtain limit diffusion of the reaction gas in reaction chamber.
11. plasma processing apparatus according to claim 10, it is characterised in that: the annular air curtain is to center position
The flow velocity of the distance of extension and the current-carrying gas is positively correlated function.
12. plasma processing apparatus according to claim 10, which is characterized in that the current-carrying gas injection and a gas
Body flow controller is connected, and current-carrying gas described in the gas flow-control injects the flow velocity in the reaction chamber.
13. plasma processing apparatus according to claim 10, which is characterized in that the current-carrying gas injector is to set
Set the gas via-hole on the reaction cavity side wall.
14. plasma processing apparatus according to claim 10, which is characterized in that the current-carrying gas injector is to pass through
It wears the reaction cavity side wall and extends the gas nozzle of a distance into reaction chamber.
15. plasma processing apparatus according to claim 10, which is characterized in that below the reactant gas injector
One ring baffle for having middle opening is set, and the current-carrying gas injector is through the reaction cavity side wall and the ring
The gas via-hole of shape baffle.
16. plasma processing apparatus according to claim 15, which is characterized in that the current-carrying gas injector is in institute
Baffle interior is stated radially to be distributed along the radial direction of the ring baffle.
17. plasma processing apparatus according to claim 15, which is characterized in that the current-carrying gas injector is at least
The radial direction of the partial deviation ring baffle runs through the annular section of the ring baffle, realizes in the baffle interior
Irregular distribution.
18. a kind of method for handling semiconductor chip, the method described in any one of the claims 1-17 it is equal from
It is carried out in daughter processing unit, it is characterised in that: described method includes following steps:
Substrate to be processed is placed on substrate supporting device；
Reaction gas is provided into reaction chamber by reactant gas injector, while starting radio-frequency power emitter, it will be described
Reaction gas is dissociated into plasma；
The current-carrying gas of certain flow rate is injected into the reaction chamber by current-carrying gas injector；The current-carrying gas is being reacted
Intracavitary to form the annular air curtain for extending certain distance to reaction chamber center position, the annular air curtain limits the reaction gas and exists
Diffusion in reaction chamber；
It adjusts the current-carrying gas flow velocity in the current-carrying gas injector and is extended with changing the annular air curtain to center position
Distance realizes the adjustment being distributed to reaction gas.
19. according to the method for claim 18, which is characterized in that the substrate is silicon chip, and the method includes alternately
The etch step and deposition step of progress, current-carrying gas injector described in the etch step inject the current-carrying gas in reaction chamber
Body flow velocity is lower than current-carrying gas flow velocity in deposition step.
20. according to the method for claim 19, which is characterized in that inject the current-carrying gas in reaction chamber in the etch step
Body flow velocity is more than or equal to 0.
21. according to the method for claim 18, it is characterised in that: the current-carrying gas is not involved in the anti-of the reaction gas
Answer technique.
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| CN201610259760.3A CN107306473B (en) | 2016-04-25 | 2016-04-25 | A kind of semiconductor processing device and the method for handling substrate |
| TW106108412A TWI633811B (en) | 2016-04-25 | 2017-03-14 | Plasma processing device and method for processing semiconductor substrate |
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| CN201610259760.3A CN107306473B (en) | 2016-04-25 | 2016-04-25 | A kind of semiconductor processing device and the method for handling substrate |
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| CN112447472B (en) * | 2019-08-27 | 2023-03-07 | 中微半导体设备(上海)股份有限公司 | Plasma reaction device for improving uniform distribution of gas |
| TWI746222B (en) | 2020-10-21 | 2021-11-11 | 財團法人工業技術研究院 | Deposition apparatus |
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| CN107306473A (en) | 2017-10-31 |
| TW201806449A (en) | 2018-02-16 |
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