CN107306473A - A kind of semiconductor processing device and the method for handling substrate - Google Patents
A kind of semiconductor processing device and the method for handling substrate Download PDFInfo
- Publication number
- CN107306473A CN107306473A CN201610259760.3A CN201610259760A CN107306473A CN 107306473 A CN107306473 A CN 107306473A CN 201610259760 A CN201610259760 A CN 201610259760A CN 107306473 A CN107306473 A CN 107306473A
- Authority
- CN
- China
- Prior art keywords
- current
- gas
- reaction chamber
- carrying
- carrying gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
Abstract
The present invention provides a kind of plasma processing apparatus and substrate preparation method, wherein, including reaction cavity, wherein the insulating materials window that at least part top plate of the reaction cavity is made up of insulating materials.Substrate supporting device, the lower section for the insulating materials window being arranged in the reaction cavity.Radio-frequency power emitter is located above the insulating materials window, is entered with launching radio-frequency power through the insulating materials window in the reaction cavity.Reactant gas injector, it is used to supply reacting gas into the reaction chamber；Some current-carrying gas injectors are set below the reactant gas injector, current-carrying gas for injecting from certain flow rate to reaction chamber, it can effectively change restraining force size of the current-carrying gas to the diffusion of reacting gas by adjusting the flow velocity size of the current-carrying gas, and then control different distributions of the reacting gas in the reaction chamber to meet the demand of different process.
Description
Technical field
The present invention relates to the uniform heating skill of semiconductor processing device, more particularly to semiconductor processing device
Art field.
Background technology
Semiconductor processing device is commonly known in the art, and be widely used in semiconductor integrated circuit,
In flat-panel monitor, light emitting diode (LED), the process industry of solar cell etc..One type etc.
Gas ions processing unit is the important component in semiconductor processing device, in plasma processing apparatus
In would generally apply at least one radio-frequency power supply to produce and maintain plasma in reaction chamber.Wherein,
There are many different modes to apply radio-frequency power, the design of each different modes will cause different characteristics,
The such as dissociation of efficiency, plasma, homogeneity etc..Wherein, a kind of design is inductive (ICP) etc.
Ion chamber.
In inductively coupled plasma processing chamber, radio frequency power source generally via a coiled type antenna to
Transmitting RF energy in reaction chamber.In order that the radio-frequency power from antenna is coupled in reaction chamber, in day
An insulating materials window is placed at line.Reaction chamber can handle various substrates, such as silicon chip etc., substrate
It is fixed on chuck, plasma is produced above substrate.Therefore, antenna is placed on reactor top plate
Top so that reaction chamber top plate is made up of insulating materials or including an insulating materials window.
In plasma processing chamber, various reacting gas are injected into reaction chamber, to cause ion and base
Chemical reaction and/or physical action between piece can be used for forming various features structure on the substrate,
Such as etch, deposit etc..In many technological processes, a critically important index is inside substrate
Process homogeneity.It is, one act on substrate center region technological process should with act on substrate
The technological process of fringe region is identical or highly close.Thus, for example, when performing technological process,
The etching rate in substrate center region should be identical with the etching rate in substrate edge region.
Fig. 1 shows a kind of sectional view of existing inductively coupled plasma reaction chamber design.ICP reacts
Chamber 100 includes substantially cylindrical metal sidewall 105 and insulation top plate 107, and composition can be evacuated
The airtight space that device 125 is vacuumized.Pedestal 110 supports chuck 115, and the chuck 115 supports pending
Substrate 120.Radio-frequency power from radio frequency power source 145 is applied to the antenna 140 in coiled type.
Reacting gas from source of the gas 150 is supplied in reaction chamber by pipeline 155, to light and maintain
Ion, and thus substrate 120 is processed.In standard inductance coupled reaction chamber, gas by
One of shower nozzle 135 of injector/shower nozzle 130 and centre around reaction chamber or both together injects to supply
Should be in vacuum tank.
In order to which the central area for preventing the gas from peripheral shower nozzle 130 from not yet reaching substrate 120 is taken out
Go out in reaction chamber, Publication No. CN102355792A Chinese patent, disclosed a kind of regulation reaction
Intracavitary reacting gas and the technical scheme of free radical distribution, by peripheral shower nozzle 130 and pedestal 110 it
Between a baffle plate 170 is set, the central area of baffle plate 170 sets opening, and baffle plate can extend reacting gas and exist
Dissociation path in reaction chamber, improves the dissociation efficiency of reacting gas, while effectively have adjusted in reaction chamber
The distribution of free radical so that the distribution of free radical can realize the uniform treatment to substrate.
However, in some etching technics, such as Bosch technique, etch step and deposition step alternate cycles
Carry out, the free radical played a major role in deposition step status in etch step is replaced by charged particle.
Because charged particle is different from the distribution of free radical, by controlling free radical to be distributed in depositing operation
Realizing the baffle plate 170 of substrate uniform deposition may make in etching technics to being uniformly distributed for charged particle
Into adverse effect, i.e. baffle plate 170 in deposition step beneficial effect substantially, in etch step, then effect is not
Substantially.Ideally, baffle plate can be set in deposition step, baffle plate is removed in etch step,
But in actual process, due to deposition step and etch step, each the duration is shorter, switching rate requirement
Higher, the operation difficulty of equipment can not only be greatly increased by frequently moving in and out process components, can also be to anti-
Intracavitary is answered to bring substantial amounts of particulate pollutant, it is considered to be inadvisable mode.
Further, since the openings of sizes of baffle plate is different to the distribution influence of plasma in reaction chamber, it is considered to
Etching area to substrates of different is different, and the Spreading requirements of plasma are different, in order to adapt to different works
The substrate etching of skill, it is necessary to set the baffle plate of different openings size, but, reason is described above, different
Baffle plate move in and out reaction chamber and can not only increase design difficulty, while pollution can be brought to reaction chamber, drop
The qualification rate and efficiency of low product.
Therefore, a kind of inductive reaction chamber that improves is needed to design in the industry, can be according to different process needs
Adjust the distributed controll of the free radical and charged particle in plasma.
The content of the invention
In order to solve the above problems, the invention discloses a kind of semiconductor processing device, including：By pushing up
The sealed reaction chamber that plate and reaction chamber side wall are surrounded；Substrate supporting device, it is arranged at the reaction
Below the insulating materials window of intracavitary；For realizing the propclip to substrate in process treatment process
Hold；Radio-frequency power emitter, it is arranged above the top plate, to launch RF energy described in
In reaction chamber；Reactant gas injector, it is used to supply reacting gas into the reaction chamber；Current-carrying
Air injector, it is arranged at below the reactant gas injector, and the current-carrying gas injector connects
A Gas controller is connect, the Gas controller control current-carrying gas injects anti-through current-carrying gas injector
Answer the flow velocity of chamber.
It is preferred that, the reactant gas injector includes being arranged on the periphery spray on the wall of the reaction chamber side
Head and/or the central jets being arranged on the top plate.Reacting gas can select from peripheral shower nozzle or in
One of heart shower nozzle injects reaction chamber, can also select simultaneously from peripheral shower nozzle or central jets injection reaction
Chamber.
It is preferred that, the current-carrying gas is the nonreactive gas for being not involved in the reacting gas reaction.
It is preferred that, the current-carrying gas injector is arranged on the reaction chamber body sidewall.The current-carrying
Air injector can be the gas via-hole being arranged on the wall of reaction chamber side, or through described anti-
Answer chamber side wall and extend the gas tip of certain length to the central area of reaction chamber.
It is preferred that, a ring baffle for carrying middle opening is set below the reactant gas injector,
The current-carrying gas injector is logical through the gas of the reaction chamber body sidewall and the ring baffle
Hole.
It is preferred that, the current-carrying gas injector is in the baffle interior along the half of the ring baffle
Footpath direction is radially distributed.
It is preferred that, at least part of radius side for deviateing the ring baffle of the current-carrying gas injector
To the annular section through the ring baffle, realize in the irregular distribution of the baffle interior, mesh
Be regulation reacting gas asymmetric distribution on the circumferencial direction.
It is preferred that, the internal diameter of some current-carrying gas injectors includes one or more chi
It is very little.By setting the internal diameter of current-carrying gas injector to exist for identical or different can realize to reacting gas
Being uniformly distributed or uneven distribution radially.
It is preferred that, the current-carrying gas injector passes through the Gas controller and a current-carrying gas source phase
Even.The Gas controller be gas flow controller, the gas flow controller can control into
Enter the flow velocity size and switch on and off of the current-carrying gas of current-carrying gas injector.
Further, invention additionally discloses a kind of plasma processing apparatus, wherein, including：
Reaction cavity, including the sealed reaction chamber surrounded by top plate and reaction chamber side wall, the top plate
Constitute insulating materials window；
Substrate supporting device, it is arranged at below the insulating materials window in the reaction chamber；
Radio-frequency power emitter, it is arranged above the insulating materials window, to launch RF energy
Into the reaction chamber；
Reactant gas injector, it is used to supply reacting gas into the reaction chamber；
Current-carrying gas injector, it is arranged at below the reactant gas injector, for described anti-
Chamber center position is answered to inject the current-carrying gas of certain flow rate, the current-carrying gas with certain flow rate is in reaction
Intracavitary forms the annular air curtain for extending certain distance to reaction chamber center position, the annular air curtain limitation
Diffusion of the reacting gas in reaction chamber.
The flow velocity of the distance that the annular air curtain extends to center position and the current-carrying gas is in positive
Close function.
Further, the invention also discloses a kind of method for manufacturing semiconductor chip, methods described exists
Carry out, comprise the following steps in plasm reaction cavity described above：
Pending substrate is placed on the substrate supporting device；
Reacting gas is provided into the reaction chamber by the reactant gas injector, is penetrated while starting
Frequency power emitting device, plasma is dissociated into by the reacting gas；
The current-carrying gas of certain flow rate is injected into the reaction chamber by the current-carrying gas injector；
The current-carrying gas is to limit the diffusion of the reacting gas in the horizontal direction, the current-carrying gas stream
The higher restraining force to reacting gas formation of speed is bigger；
The current-carrying gas flow velocity in the current-carrying gas injector is adjusted to change the reacting gas to exist
Distribution in reaction chamber.
It is preferred that, the substrate is silicon chip, and methods described includes etch step alternately and sunk
Current-carrying gas stream in product step, the injection reaction chamber of current-carrying gas injector described in the etch step
Speed is less than current-carrying gas flow velocity in deposition step.
It is preferred that, the current-carrying gas flow velocity injected in the etch step in reaction chamber is more than or equal to 0.
The advantage of the invention is that：A gas is set to limit below reactant gas injector in reaction chamber
Device processed, the gas limits device includes some current-carrying gas injectors, for being noted into reaction chamber
Enter the current-carrying gas of certain flow rate, can effectively be changed by the flow velocity size for adjusting the current-carrying gas
Current-carrying gas is to the restraining force size of the diffusion of reacting gas, equivalent to changing gas limits device
Opening diameter size.Because the flow velocity of current-carrying gas is a parameter for being easier control, therefore,
Reacting gas is divided in the reaction chamber by controlling the flow velocity that current-carrying gas enters reaction chamber to realize
The control of cloth.The gas limitation dress of different openings can not be provided for different process in the prior art by solving
The problem put.
Brief description of the drawings
Accompanying drawing illustrates embodiments of the invention, and and specification as a part for description of the invention
Together explanation and illustration the present invention principle.Accompanying drawing diagrammatically explains the main of citing embodiment
Feature.Accompanying drawing is not intended to description all features of practical embodiments without the phase between the element in explanation figure
To size, nor scaling relative to.
Fig. 1 is the sectional view of the inductively coupled plasma reaction chamber of prior art；
Fig. 2 is the sectional view of the inductively coupled plasma reaction chamber of the embodiment of the present invention；
Fig. 3 shows action principle schematic diagram of the current-carrying gas to vertical direction reacting gas；
Fig. 4 shows the attenuation curve figure of the corresponding reacting gas of three kinds of Reynolds numbers in the X direction；
Fig. 5 is the sectional view of another embodiment of the present invention inductively coupled plasma reaction chamber.
Embodiment
Partly led the invention discloses a kind of inductance coupling plasma processing device and being manufactured in described device
The method of body substrate.Technical scheme of the present invention is directed to obtaining the substrate etching knot having good uniformity
Really, it is adaptable to etch step and deposition step Bosch technique alternately and other need it is right in process
The technique that the distribution of plasma is adjusted.Below in conjunction with specific embodiments and the drawings to the present invention's
Apparatus and method are described in detail.
Technical staff's research is found, in etching technics, is determined the principal element of substrate processing uniformity and is
The distribution of charged particle and free radical in plasma, reacting gas dissociates shape in the presence of radio-frequency power
Into plasma be a complicated component material, both including the reacting gas not dissociated, in also including
The free radical of property and powered particle etc..Wherein charged particle has directionality in the presence of bias power,
Bombardment etching mainly is carried out to substrate in etching technics；Neutral radical is mainly being carved by chemically reacting
Reaction or deposition reaction, the higher region etch reaction of number of free radical or deposition are performed etching in etching technique
Reaction rate is faster.
Found in actual process, the distribution of free radical by plasma is produced except being reacted in reaction chamber
Also influenceed outside gas distribution influence by the free radical consumed in reacting.Filled in inductively coupled plasma processing
Put it is interior to substrate carry out corona treatment when, due to substrate edge to the region between the wall of reaction chamber side without
Etching technics, therefore, the plasma in this region consume less, a large amount of heaps of free radical in plasma
Product so that be much higher than substrate center region close to number of free radical around the substrate edge region in the region
Number of free radical, and then cause the etch rate in substrate edge region to be much higher than substrate center region
Etch rate.
In order to be distributed the reacting gas in reaction chamber into row constraint, while in order to realize to substrate edge area
Blocking for domain, in the inductive reaction chamber design shown in Fig. 1, sets a gear for carrying central opening
Plate as gas limits device, the baffle plate can guide through peripheral shower nozzle 130 inject reacting gas to
Central area is flowed, and reacting gas reaction gas before substrate surface is reached is adjusted using the central opening of setting
The distribution of body.The distribution of free radical particularly in reacting gas, meanwhile, by setting with opening
Baffle plate, realization is blocked to substrate edge region, so that the number of free radical of fringe region is reduced, and then
Reduce the etch rate in substrate edge region.
In concrete technology, at least there are the following problems for the use of baffle plate：Silicon chip is etched in Bosch method
In technique, baffle plate can be greatly improved in deposition step due to that can carry out good control to free radical distribution
The uniformity of substrate processing, but in etch step, the charged particle distribution in baffle plate meeting plasma
Harmful effect is produced, is unfavorable for substrate working process in etch step.In addition, due to different bases
The etching area of piece is different, different to the free radical distribution influence in reaction chamber, and concrete principle is：Work as base
When piece etching area is smaller, free radical consumes less, the freedom of central area and fringe region in reaction chamber
Base easily keeps relatively uniform distribution in reaction chamber；When substrate etching area is larger, due to center
Region etch reaction needs the free radical participated in more, and fringe region is due to the etching smaller consumption of area
Free radical is less cause herein number of free radical quickly raise, to ensure the uniformity of Substrate treatment, etching
The larger substrate of area needs the less baffle plate of opening size to carry out larger face to substrate edge region
Long-pending blocks.Therefore, even if being both that in deposition step, the substrate of different etching area also is intended to have
The baffle plate of different size openings is controlled.In order to solve the above problems, ideally, by setting
The openings of sizes of baffle plate is different, it is possible to achieve the substrate with different etching area is carried out uniform treatment or
Different procedure of processings to same substrate carry out uniform treatment.Such as in Bosch technique, in deposition step
The baffle plate of appropriate openings size is placed in reaction chamber, the baffle plate or replacement one are taken out in etch step
The larger baffle plate of opening.But in real work, due to deposition step and etch step in Bosch technique
Alternating speed be exceedingly fast, 1s speed alternate cycles are generally even less than with 1s, therefore can not possibly realize
Baffle plate is frequently moved in and out in reaction chamber.In addition, to meet the etching of substrates of different, it is necessary to make
The baffle plate of a variety of different size openings, not only greatly improves the processing cost of equipment, can also extend substrate and add
Man-hour is long, reduces the applicability of equipment.Therefore, different etching can not be met by way of baffle plate is set
Demand of the technique to different size openings baffle plates.
In order to solve the above-mentioned technical problem, a kind of inductively coupled plasma reaction chamber (ICP of present invention design
Reaction chamber), Fig. 2 shows the sectional view of ICP reaction chambers according to a first embodiment of the present invention.ICP is anti-
Answer chamber 200 to include metal sidewall 205 and insulation top plate 207, constitute an airtight vacuum reaction cavity,
And vacuumized by vacuum pumping pump 225.The insulation top plate 207 is only as an example, it can also be used
Its top plate pattern, such as dome shape, metal top plate with insulating materials window etc..Pedestal 210
Support and be placed pending substrate 220 on chuck 215, the chuck.Bias power is applied to described
On chuck 215, but be due to disclose the embodiment of the present invention it is unrelated, it is not shown in fig. 2.It is described
The radio-frequency power of radio-frequency power supply 245 is applied to antenna 240, and the antenna is substantially coiled type.
Reacting gas is supplied in reaction chamber from reacting gas source 250 by pipeline 225, in radio frequency energy
Lighted in the presence of amount and maintain plasma, so as to be processed to substrate 220.In the present embodiment,
Reacting gas is supplied in vacuum space by peripheral injector or shower nozzle 230, but extra gas
Can also selectivity from central jets 235 inject reaction chamber.If gas is from injector 230 and shower nozzle
235 supply simultaneously, and each gas flow can independent control.Any these are used to inject reacting gas
Setting can be described as reactant gas injector.In fig. 2, baffle plate 270 is arranged in reaction chamber to limit
And/or guiding distributes the gas flowing from gas tip 230.Shown in marking with reference to the accompanying drawings, in above-mentioned implementation
Baffle plate is substantially the disc of middle with hole or opening in example.The baffle plate is located at below gas tip still
Above substrate position.So, gas is restricted to further towards anti-before substrate is downwardly towards
Answer in the middle of chamber, as indicated by a dashed arrow in the figure.
Normally, the baffle plate 270 can be made up of metal material, such as the aluminium of anodization.Use metal material
It can be conducive to limiting the plasma above the baffle plate to manufacture baffle plate, because the radio frequency from coil
Energy is propagated by the baffle.On the other hand, the baffle plate 270 can also be by insulating materials
It is made, such as ceramics or quartz.In the embodiment using insulation barrier, the radio frequency (RF) from coil
Energy can pass through the baffle plate so that plasma can be maintained at (dotted line part below the baffle plate
Divide display), it is dependent on the gas flow reached below the baffle plate.
Setting is a kind of in the present embodiment, in reaction chamber to be distributed what is adjusted into Mobile state to reacting gas
Gas limits device, specifically, passing through baffle plate 270 and some current-carrying for the inside for being arranged on baffle plate 270
Air injector 275 is realized.Current-carrying gas injector 275 is along ring baffle radial direction
Through the gas via-hole of setting, it is close to one end of reaction chamber side wall 205 by being arranged on reaction chamber side wall
Internal gas via-hole is connected with the current-carrying gas source 260 being arranged on outside the wall of reaction chamber side, current-carrying gas
The memory storage of source 260 is not involved in the gas of technological reaction in reaction chamber, such as Ar, N2Deng.Current-carrying gas is noted
The other end for entering device 275 is the opening being arranged on baffle openings tangent plane.What current-carrying gas source 260 was exported
Current-carrying gas can enter current-carrying gas through a gas control equipment such as gas flow controller (MFC) 265
Body injector 275, gas flow controller 265 can control the current-carrying gas in current-carrying gas source 260
Body is injected into reaction chamber with certain flow rate through current-carrying gas injector 275.When current-carrying gas injector
When the current-carrying gas of 275 outputs has certain flow rate, current-carrying gas can be along the opening tangent plane for changing shape baffle plate
Form the annular air curtain for extending certain distance to reaction chamber center position.The annular of the current-carrying gas formation
Air curtain forms certain restriction to the reacting gas and plasma that are flowed downward through its annular opening, limit
Make the diffusion of the reacting gas and plasma in the reaction chamber.The annular air curtain is to center side
The flow velocity correlation of reaction chamber, current-carrying gas note are injected with the current-carrying gas to the distance of extension
The current-carrying gas flow velocity for entering the delivery outlet of device 275 is higher, and the constraint opening bore of annular air curtain formation is smaller,
Restraining force to reacting gas and plasma formation is bigger, equivalent to the internal diameter for reducing baffle openings.
Therefore by controlling current-carrying gas to inject the flow velocity of reaction chamber, can dynamic regulating fender opening size,
To meet the demand of different process.The restraining force produced by adjusting current-carrying gas, which is realized, to be opened baffle plate 270
The dynamic adjustment of mouth size.Different from current-carrying gas injector 275 in the present embodiment along baffle plate 270
Radial direction is set in good fortune strip, and in a further embodiment, current-carrying gas injector 275 can be set
Set to deviate radial direction, for example, current-carrying gas injector can in the shape of a spiral be set in baffle plate,
To cause the current-carrying gas injected in reaction chamber in vortex shape distribution.Current-carrying gas injector 275 can also
It is partial to be set to be randomly distributed, radially non-uniform reacting gas is adjusted with realizing.
Fig. 3 shows action principle schematic diagram of the current-carrying gas to vertical direction reacting gas.Shown in Fig. 2
ICP reaction chambers in, the reacting gas injected through peripheral shower nozzle 230 and central jets 235 in reaction chamber
And plasma is required for getting to substrate surface by the opening 271 on baffle plate 270.Therefore, outside
Enclose shower nozzle and central jets outflow reacting gas can be shown in Fig. 3 y-axis direction flow downward,
During flowing downward, because gas has the characteristic of diffusion, reacting gas can be carried out to all the winds
Diffusion.When reacting gas flows downward by the opening 271 of baffle plate, the current-carrying set in baffle plate 270
The opposite direction of X-axis is sprayed with certain flow rate shown in current-carrying gas along Fig. 3 in air injector 275,
Impulsive constraints are carried out to the reacting gas in Y direction.As long as current-carrying gas injector 275 is in baffle plate 270
Internal setting is intensive enough, you can to produce the same effect of similar baffle plate by the reaction in Y direction
Distribution of the gas in X-axis is effectively limited.Specifically, in the diagram shown in figure 3, setting
Reacting gas flow velocity in Y direction is Va(x), the current-carrying gas flow velocity in setting X-direction is
Vb, influenceed by the current-carrying gas impact in X-direction, VaAnd V (x)bBetween the following relation of presence：
Va(x)∝Va0*e(-Reb*x/d)
Wherein, x is the diffusion length of reacting gas in the X-axis direction, and d is current-carrying gas injector 275
Diameter, Re represents the Reynolds number of current-carrying gas flow velocity, and Reynolds number means more greatly current-carrying gas stream
Fast VbIt is bigger, as X=0, Va(x)=Va0.Understand that reacting gas is in X based on above-mentioned relation
Diffusion on direction is mainly by the Reynolds for the current-carrying gas being applied in current-carrying gas injector 275
The diameter limitation of number and current-carrying gas injector.In order to obtain uniform reacting gas distribution, it can set
The diameter of current-carrying gas injector 275 is identical；Need deliberately to set reacting gas in some techniques radially
It is uneven, therefore the diameter of current-carrying gas injector can be set different.
Fig. 4 it is exemplary to list the decay in the X direction of the corresponding reacting gas of three kinds of Reynolds numbers bent
Line chart.When Reynolds number=1.9, decay of the reacting gas in X-axis is very slow, or even works as
At x=150mm, reacting gas flow velocity only decays to 15% or so, and this explanation current-carrying gas is to reacting gas
Percussion it is smaller, to reacting gas formation constraint opening it is larger.When Reynolds number=19,
At x=40mm, the flow velocity of reacting gas almost decays to 0, i.e., in Reynolds number=19, current-carrying gas
The confinement ring for being 80mm equivalent to one opening diameter of formation.When Reynolds number rises to 190, instead
Answer the gas flow rate rate of decay very fast, be to decay to 0 x=10mm at, when illustrating Reynolds number=190,
The confinement ring that current-carrying gas is 20mm to reacting gas one opening diameter of formation.
Understood based on above-mentioned relation, by adjusting the flow velocity of current-carrying gas, baffle plate 270 and current-carrying gas note
Entering the constraint of the gas limits device generation of the formation of device 275 can become big or reduce, the current-carrying of setting
Gas flow rate is higher, and the Reynolds number in the exit of current-carrying gas injector 275 is bigger, gas limits device
The limitation opening that the homologation reaction gas of generation passes through is smaller.The limitation that gas limits device can be adjusted is opened
Mouth diameter range is more than zero, less than or equal to the diameter of baffle plate 270.When the flow velocity of current-carrying gas is zero,
Equivalent to the effect of only baffle plate, in order to improve the dynamic regulation scope of gas limits device, the present embodiment
In being relatively large in diameter for baffle plate 270 can be set.
For the dynamic regulation scope of larger range of regulation gas limits device, Fig. 5 shows another reality
Apply the ICP reaction chamber structural representations of example.The structure and embodiment illustrated in fig. 2 of reaction chamber in the present embodiment
Middle reaction cavity configuration is roughly the same, succinct in order to describe, and identical part uses identical number system, only
Original " 2xx " series is adjusted to " 3xx " series.It is with the difference of above-described embodiment,
Baffle plate is not provided with the present embodiment, current-carrying gas injector 372 is to be set directly on the wall of reaction chamber side
Gas via-hole, in a further embodiment, current-carrying gas injector be through reaction chamber side wall and to
The central area of reaction chamber extends the gas nozzle of certain distance.Current-carrying gas injector 372 is used to carry
The current-carrying gas in gas source 360 is flowed with certain speed injection to reaction chamber, with to from central jets
The diffusion of 335 reacting gas flowed out with peripheral shower nozzle 330 in the horizontal direction is limited.This implementation
The current-carrying gas injector 372 of example carries out limitation principle and regulative mode and above-described embodiment to reacting gas
Identical, here is omitted, by using the annular of the formation of current-carrying gas injector 372 of the present embodiment
Air curtain, can form constraint bore opening diameter range and be more than 0 radius for being less than or equal to reaction chamber, can be with
Meet the demand of more different etching techniques.
The annular air curtain of utilization certain flow rate current-carrying gas disclosed by the invention formation is except can be to vertical direction
On reacting gas limited outside, can also to peripheral shower nozzle inject reacting gas carry out horizontal direction
Guiding, by setting intensive current-carrying gas injector on the wall of reaction chamber side, and keep current-carrying gas
The current-carrying gas of output has certain flow rate in injector, can form an annular gas screen in the horizontal direction
Barrier, can realize the effect of the guiding air-flow of baffle plate, also substrate edge region below can be hidden
Lid, therefore, the present invention had both remained the beneficial of baffle plate using the annular air curtain of current-carrying gas injector formation
Effect, realizes the dynamic regulation to limitation opening, so as to meet different step in Bosch technique again
The different of openings of sizes are limited gas to require, and different etching substrate limits openings of sizes to gas
Difference is required.
The current-carrying gas injector 372 or current-carrying gas injector 275 of the present invention can pass through gas stream
Amount controller 365 is connected with current-carrying gas source, therefore, it can convenient to current-carrying gas injection reaction chamber
Speed be adjusted.According to being described above, the flow velocity and current-carrying gas of current-carrying gas are to the reaction gas bodily form
Into the negatively correlated relation of diameter of constraint, therefore, tune can be accurately controlled by gas flow controller
Gas flow rate in whole current-carrying gas injection reaction chamber, thus can accurately realize that the constraint of annular air curtain is straight
Dynamic regulation of the footpath in each size.
In addition, practice of the those skilled in the art by the understanding to description of the invention and to the present invention,
It can be readily appreciated that other implementations.Various aspects and/or portion in multiple embodiments described herein
Part individually can be used or be combined use.It is emphasized that description and embodiments are only as act
Example, the actual scope of the present invention and thinking are defined by following claim.
Claims (21)
1. a kind of plasma processing apparatus, wherein, including：
Reaction cavity, including the sealed reaction chamber surrounded by top plate and reaction chamber side wall, the top plate constitute insulating materials window；
Substrate supporting device, it is arranged at below the insulating materials window in the reaction chamber；
Radio-frequency power emitter, it is arranged above the insulating materials window, to launch RF energy in the reaction chamber；
Reactant gas injector, it is used to supply reacting gas into the reaction chamber；
Current-carrying gas injector, it is arranged at below the reactant gas injector, and the current-carrying gas injector connects a Gas controller, and the Gas controller control current-carrying gas injects the flow velocity of reaction chamber through current-carrying gas injector.
2. plasma processing apparatus according to claim 1, it is characterised in that the current-carrying gas is the nonreactive gas for being not involved in the reacting gas reaction.
3. plasma processing apparatus according to claim 1, it is characterised in that the current-carrying gas injector is the gas via-hole being arranged on the reaction chamber body sidewall.
4. plasma processing apparatus according to claim 1, it is characterised in that the current-carrying gas injector is the gas nozzle for extending a distance through the reaction chamber body sidewall and into reaction chamber.
5. plasma processing apparatus according to claim 1, it is characterized in that, one ring baffle for carrying middle opening is set below the reactant gas injector, and the current-carrying gas injector is the gas via-hole through the reaction chamber body sidewall and the ring baffle.
6. plasma processing apparatus according to claim 5, it is characterised in that radial direction of the current-carrying gas injector in the baffle interior along the ring baffle is radially distributed.
7. plasma processing apparatus according to claim 5, it is characterized in that, the at least part of radial direction for deviateing the ring baffle of the current-carrying gas injector runs through the annular section of the ring baffle, realizes in the irregular distribution of the baffle interior.
8. the plasma processing apparatus according to any one of claim 1-7, it is characterised in that the internal diameter of some current-carrying gas injectors is set to one or more size.
9. plasma processing apparatus according to claim 1, it is characterized in that, the current-carrying gas injector is connected by the Gas controller with a current-carrying gas source, the Gas controller is gas flow controller, and the gas flow controller can control the flow velocity size and switch on and off into the current-carrying gas of current-carrying gas injector.
10. a kind of plasma processing apparatus, wherein, including：
Reaction cavity, including the sealed reaction chamber surrounded by top plate and reaction chamber side wall, the top plate constitute insulating materials window；
Substrate supporting device, it is arranged at below the insulating materials window in the reaction chamber；
Radio-frequency power emitter, it is arranged above the insulating materials window, to launch RF energy in the reaction chamber；
Reactant gas injector, it is used to supply reacting gas into the reaction chamber；
Current-carrying gas injector, it is arranged at below the reactant gas injector, current-carrying gas for injecting from certain flow rate to the reaction chamber center position, current-carrying gas with certain flow rate forms the annular air curtain for extending certain distance to reaction chamber center position in reaction chamber, and the annular air curtain limits diffusion of the reacting gas in reaction chamber.
11. plasma processing apparatus according to claim 10, it is characterised in that：The flow velocity of distance that the annular air curtain extends to center position and the current-carrying gas is proportionate function.
12. plasma processing apparatus according to claim 10, it is characterised in that the current-carrying gas injection is connected with a gas flow controller, the flow velocity that current-carrying gas described in the gas flow-control is injected in the reaction chamber.
13. plasma processing apparatus according to claim 10, it is characterised in that the current-carrying gas injector is the gas via-hole being arranged on the reaction chamber body sidewall.
14. plasma processing apparatus according to claim 10, it is characterised in that the current-carrying gas injector is the gas nozzle for extending a distance through the reaction chamber body sidewall and into reaction chamber.
15. plasma processing apparatus according to claim 10, it is characterized in that, one ring baffle for carrying middle opening is set below the reactant gas injector, and the current-carrying gas injector is the gas via-hole through the reaction chamber body sidewall and the ring baffle.
16. plasma processing apparatus according to claim 15, it is characterised in that radial direction of the current-carrying gas injector in the baffle interior along the ring baffle is radially distributed.
17. plasma processing apparatus according to claim 15, it is characterized in that, the at least part of radial direction for deviateing the ring baffle of the current-carrying gas injector runs through the annular section of the ring baffle, realizes in the irregular distribution of the baffle interior.
18. pending substrate is placed on the substrate supporting device；
Reacting gas is provided into the reaction chamber by the reactant gas injector, while starting radio-frequency power emitter, the reacting gas is dissociated into plasma；
The current-carrying gas of certain flow rate is injected into the reaction chamber by the current-carrying gas injector；The current-carrying gas forms the annular air curtain for extending certain distance to reaction chamber center position in reaction chamber, and the annular air curtain limits diffusion of the reacting gas in reaction chamber；
Adjust the current-carrying gas flow velocity in the current-carrying gas injector to change the distance that the annular air curtain extends to center position, realize the adjustment being distributed to reacting gas.
19. method according to claim 18, it is characterized in that, the substrate is silicon chip, the current-carrying gas flow velocity that methods described is included in etch step and deposition step alternately, the injection reaction chamber of current-carrying gas injector described in the etch step is less than current-carrying gas flow velocity in deposition step.
20. method according to claim 18, it is characterised in that the current-carrying gas flow velocity injected in the etch step in reaction chamber is more than or equal to 0.
21. method according to claim 18, it is characterised in that：The current-carrying gas is not involved in the reaction process of the reacting gas.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610259760.3A CN107306473B (en) | 2016-04-25 | 2016-04-25 | A kind of semiconductor processing device and the method for handling substrate |
| TW106108412A TWI633811B (en) | 2016-04-25 | 2017-03-14 | Plasma processing device and method for processing semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610259760.3A CN107306473B (en) | 2016-04-25 | 2016-04-25 | A kind of semiconductor processing device and the method for handling substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107306473A true CN107306473A (en) | 2017-10-31 |
| CN107306473B CN107306473B (en) | 2019-04-30 |
Family
ID=60150484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610259760.3A Active CN107306473B (en) | 2016-04-25 | 2016-04-25 | A kind of semiconductor processing device and the method for handling substrate |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107306473B (en) |
| TW (1) | TWI633811B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112447472B (en) * | 2019-08-27 | 2023-03-07 | 中微半导体设备(上海)股份有限公司 | Plasma reaction device for improving uniform distribution of gas |
| TWI746222B (en) | 2020-10-21 | 2021-11-11 | 財團法人工業技術研究院 | Deposition apparatus |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007012664A (en) * | 2005-06-28 | 2007-01-18 | Sumco Corp | Epitaxial growth device and manufacturing method thereof, and epitaxial wafer |
| CN102355792A (en) * | 2011-10-19 | 2012-02-15 | 中微半导体设备(上海)有限公司 | Electromagnetic coupling plasma device capable of improving uniformity and efficiency of plasma |
| CN103021778A (en) * | 2011-09-21 | 2013-04-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Airflow balancing plate, chamber device and substrate processing device |
| CN103796413A (en) * | 2012-11-01 | 2014-05-14 | 中微半导体设备(上海)有限公司 | Plasma reactor and method for manufacturing semiconductor substrate |
| CN103997843A (en) * | 2013-02-17 | 2014-08-20 | 中微半导体设备(上海)有限公司 | Plasma reactor improving gas distribution |
| US20140273503A1 (en) * | 2013-03-14 | 2014-09-18 | Memc Electronic Materials, Inc. | Methods of gas distribution in a chemical vapor deposition system |
| CN104350585A (en) * | 2012-06-20 | 2015-02-11 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
| CN105393335A (en) * | 2013-07-19 | 2016-03-09 | Lg矽得荣株式会社 | Epitaxial reactor |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW533246B (en) * | 2001-11-29 | 2003-05-21 | Univ Nat Cheng Kung | Titanium aluminum carbon nitride-amorphous carbon nano composite ceramic plating layer with high ductility and high adhesion |
| US20060060139A1 (en) * | 2004-04-12 | 2006-03-23 | Mks Instruments, Inc. | Precursor gas delivery with carrier gas mixing |
| US20060172536A1 (en) * | 2005-02-03 | 2006-08-03 | Brown Karl M | Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece |
| US9095038B2 (en) * | 2011-10-19 | 2015-07-28 | Advanced Micro-Fabrication Equipment, Inc. Asia | ICP source design for plasma uniformity and efficiency enhancement |
-
2016
- 2016-04-25 CN CN201610259760.3A patent/CN107306473B/en active Active
-
2017
- 2017-03-14 TW TW106108412A patent/TWI633811B/en active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007012664A (en) * | 2005-06-28 | 2007-01-18 | Sumco Corp | Epitaxial growth device and manufacturing method thereof, and epitaxial wafer |
| CN103021778A (en) * | 2011-09-21 | 2013-04-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Airflow balancing plate, chamber device and substrate processing device |
| CN102355792A (en) * | 2011-10-19 | 2012-02-15 | 中微半导体设备(上海)有限公司 | Electromagnetic coupling plasma device capable of improving uniformity and efficiency of plasma |
| CN104350585A (en) * | 2012-06-20 | 2015-02-11 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
| CN103796413A (en) * | 2012-11-01 | 2014-05-14 | 中微半导体设备(上海)有限公司 | Plasma reactor and method for manufacturing semiconductor substrate |
| CN103997843A (en) * | 2013-02-17 | 2014-08-20 | 中微半导体设备(上海)有限公司 | Plasma reactor improving gas distribution |
| US20140273503A1 (en) * | 2013-03-14 | 2014-09-18 | Memc Electronic Materials, Inc. | Methods of gas distribution in a chemical vapor deposition system |
| CN105393335A (en) * | 2013-07-19 | 2016-03-09 | Lg矽得荣株式会社 | Epitaxial reactor |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201806449A (en) | 2018-02-16 |
| TWI633811B (en) | 2018-08-21 |
| CN107306473B (en) | 2019-04-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100394535C (en) | High-density plasma processing apparatus | |
| CN102355792B (en) | Improve the inductively coupled plasma device of plasma uniformity and efficiency | |
| CN103003924B (en) | Plasma processing apparatus and plasma processing method | |
| CN102473634B (en) | Plasma treatment device and plasma treatment method | |
| KR100725037B1 (en) | Apparatus and method for treating semiconductor device with plasma | |
| JP5580705B2 (en) | Processing chamber and method for processing a substrate | |
| CN104576279B (en) | Gas adjusting device and plasma reactor employing same | |
| TWI671817B (en) | Fast-gas switching for etching | |
| TW201318024A (en) | Electromagnetic coupling plasma device capable of improving uniformity and efficiency of plasma | |
| CN103796413A (en) | Plasma reactor and method for manufacturing semiconductor substrate | |
| CN105789014B (en) | It is a kind of to realize the plasma processing apparatus being uniformly vented | |
| CN105529237B (en) | Gas flow guiding ring, gas supply device and plasma processing apparatus | |
| TWI556308B (en) | A plasma reactor with improved gas distribution | |
| CN107306473A (en) | A kind of semiconductor processing device and the method for handling substrate | |
| CN105789015B (en) | It is a kind of to realize the apparatus for processing plasma being uniformly vented | |
| CN104715995A (en) | Gas supply device and plasma reaction unit thereof | |
| TW201448033A (en) | Plasma reaction chamber to realize the fast-switching of reaction gas, and method thereof | |
| WO2012087919A2 (en) | Methods and apparatus for gas delivery into plasma processing chambers | |
| CN103219260A (en) | Etching device using extreme-edge gas pipeline | |
| CN102395243A (en) | Inductance coupling plasma device for improving uniformity and efficiency of plasmon | |
| CN101623680A (en) | Air inlet device and semiconductor processing equipment using same | |
| CN103915307A (en) | Plasma process chamber and gas injection apparatus for same | |
| CN103874314B (en) | A kind of inductively coupled plasma device | |
| JP2016082180A (en) | Plasma processing apparatus | |
| CN106937472A (en) | Plasma processing apparatus and method of plasma processing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
|
| CB02 | Change of applicant information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |