CN106937472A - Plasma processing apparatus and method of plasma processing - Google Patents
Plasma processing apparatus and method of plasma processing Download PDFInfo
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- CN106937472A CN106937472A CN201511003672.9A CN201511003672A CN106937472A CN 106937472 A CN106937472 A CN 106937472A CN 201511003672 A CN201511003672 A CN 201511003672A CN 106937472 A CN106937472 A CN 106937472A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2242/00—Auxiliary systems
- H05H2242/20—Power circuits
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- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
The present invention provides a kind of plasma processing apparatus and method, is used to improve the uniformity of plasma distribution, wherein, described device includes：Reaction chamber；Wafer-supporting platform in reaction chamber, for placing pending substrate；In some inductance-coupled coils of concentric distribution, for by the gaseous plasma in reaction chamber, including first, second inductance-coupled coil；Radio frequency power source；Power divider, it is connected between radio frequency power source and some inductance-coupled coils, for giving each inductance-coupled coil by the power distribution of radio frequency power source, the power divider at least has two kinds of working conditions --- first state and the second state, first inductance-coupled coil is less than its power in the second state in the power of first state, and the second inductance-coupled coil is more than its power in the second state in the power of first state；Controller, is connected with power divider, for being controlled to the switching between each working condition of power divider.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly to a kind of plasma processing apparatus and corona treatment method.
Background technology
Plasma processing apparatus are widely used in the manufacturing process of integrated circuit, such as deposit, etch, wherein, inductive type plasma（ICP, Inductively Coupled Plasma）Device is one of mainstream technology in plasma processing apparatus, and its principle is mainly the high-frequency alternating magnetic field for using radio-frequency power driving inductance-coupled coil generation stronger so that the reacting gas of low pressure is ionized generation plasma.Contain substantial amounts of electronics, ion, the atom of excitation state, molecule and free radical isoreactivity particle in plasma, above-mentioned active particle can occur various physical and chemical reactions with the surface of pending wafer, so that the pattern of crystal column surface changes, that is, complete etching process；In addition, above-mentioned active ion has activity higher than conventional gaseous reactant, the chemical reaction between reacting gas can be promoted, you can to realize plasma enhanced chemical vapor deposition（PECVD）.
Fig. 1 is a kind of cross section structure schematic diagram of inductance coupling plasma processing device of prior art, including：Reaction chamber 10；Wafer-supporting platform 11 in the reaction chamber 10, for carrying and fixing wafer 14；It is arranged at the inductance-coupled coil 12 at the top of reaction chamber 10；The power supply 13 being connected with inductance-coupled coil 12, for providing radio-frequency power to the inductance-coupled coil 12.
When the inductance coupling plasma processing device works, the power supply 13 can opened（on）And closing（off）Between switch so that realize to inductance-coupled coil 12 provide radio-frequency power so that the inductance-coupled coil 12 can produce magnetic field.The magnetic field ionization that the reacting gas of reaction chamber 10 is produced by the inductance-coupled coil 12 is input to, plasma can be formed.By taking etching technics as an example, in the case where being biased to the wafer-supporting platform 11, the plasma is influenceed by the bias of the wafer-supporting platform 11 and is bombarded to wafer 14, to perform etching technique.
However, in existing inductance coupling plasma processing device, the skewness of plasma causes the result of plasma treatment uneven.
The content of the invention
A kind of method that the problem that the present invention is solved is to provide plasma processing apparatus and corona treatment, makes the plasma in the plasma processing apparatus be more evenly distributed, and the effect of corona treatment is more preferable.
To solve the above problems, the present invention provides a kind of plasma processing apparatus, and it includes：
Reaction chamber；
Wafer-supporting platform in the reaction chamber, the wafer-supporting platform is used to place pending substrate；
It is arranged at some inductance-coupled coils in concentric distribution at the top of the reaction chamber, the inductance-coupled coil is relative with the wafer-supporting platform, for by the gaseous plasma in reaction chamber, some inductance-coupled coils at least include the first inductance-coupled coil and the second inductance-coupled coil in first inductance-coupled coil, and first inductance-coupled coil surrounds second inductance-coupled coil；
Radio frequency power source；
Power divider, it is connected between the radio frequency power source and some inductance-coupled coils, for giving each inductance-coupled coil by the power distribution of radio frequency power source, the power divider at least has two kinds of working conditions --- first state and the second state, first inductance-coupled coil is less than its power in the second state in the power of first state, and the second inductance-coupled coil is more than its power in the second state in the power of first state；
Controller, is connected with the power divider, for being controlled to the switching between each working condition of power divider.
Optionally, some inductance-coupled coils also include the 3rd inductance-coupled coil, and the 3rd inductance-coupled coil is arranged between first inductance-coupled coil and second inductance-coupled coil.
Optionally, the structure of the inductance-coupled coil is planar spiral structures or spiral tube structure.
Optionally, some inductance-coupled coils can in the vertical direction movement.
Optionally, the movement of each inductance-coupled coil is separate.
The present invention also provides a kind of method for carrying out corona treatment using device as described above, and it includes：
Pending substrate is arranged at the surface of wafer-supporting platform；
To being passed through gas in reaction chamber；
Power divider is worked a period of time in first state, then switch it to the second operation, or, make power divider switch it to first state work for a period of time, then in the second operation；Gaseous plasma in reaction chamber is formed plasma by some inductance-coupled coils being connected with power divider；
Pending substrate is processed using the plasma.
Optionally, some inductance-coupled coils also include the 3rd inductance-coupled coil, and the 3rd inductance-coupled coil is arranged between first inductance-coupled coil and second inductance-coupled coil.
Optionally, the structure of the inductance-coupled coil is planar spiral structures or spiral tube structure.
Optionally, some inductance-coupled coils can in the vertical direction movement.
Optionally, the movement of each inductance-coupled coil is separate.
Brief description of the drawings
Fig. 1 is a kind of cross section structure schematic diagram of inductance coupling plasma processing device of prior art；
Fig. 2 is the cross section structure schematic diagram of the embodiment of plasma processing apparatus of the present invention；
Fig. 3 is the schematic diagram that changes over time of power of inner ring coil.
Specific embodiment
As stated in the Background Art, in existing inductance coupling plasma processing device, the skewness of plasma causes the result of plasma treatment uneven.
Found by research, please continue to refer to Fig. 1, plasma is formed because the magnetic field that the reacting gas for being input into reaction chamber 10 is produced by the inductance-coupled coil 12 ionizes, therefore the distribution of plasma can be influenceed by the Distribution of Magnetic Field situation that the inductance-coupled coil 12 is produced.Wherein, due to the generally planar spiral winding of the inductance-coupled coil 12（spiral coils）Or helix tube（solenoid
coils）, then closer to the center of circle of the inductance-coupled coil 12, the magnetic field intensity that the inductance-coupled coil 12 is produced is stronger.And the inductance-coupled coil 12 is oppositely arranged with the wafer-supporting platform 11, so that in the reaction chamber 10, area plasma volume density near the inductance-coupled coil 12 and the center of wafer-supporting platform 11 is higher, and the area plasma volume density near the inductance-coupled coil 12 and the edge of wafer-supporting platform 11 is relatively low.
In order to improve the uniformity of the plasma density distribution in reaction chamber, the present invention provides a kind of plasma processing apparatus, as shown in Fig. 2 it is including reaction chamber 10, some inductance-coupled coils, radio frequency power source, power divider and controller etc..Wherein, there is wafer-supporting platform 11, the surface of the wafer-supporting platform 11 is used to place pending substrate in reaction chamber 10（Such as wafer）14.Some inductance-coupled coils are arranged at the top of reaction chamber 10, and relative with the wafer-supporting platform 11 in distribution with one heart, for by the gaseous plasma in reaction chamber.In the present embodiment, two inductance-coupled coils are had：Outer ring coil（First inductance-coupled coil）17 and inner ring coil（Second inductance-coupled coil）15, wherein, outer ring coil 17 is located at the periphery of inner ring coil 15 and surrounds the inner ring coil 15.
Radio frequency power source is used to provide RF energy for some inductance-coupled coils.Power divider is connected between the radio frequency power source and some inductance-coupled coils, for giving each inductance-coupled coil by the power distribution of radio frequency power source, the power divider at least has two kinds of working conditions --- first state and the second state, outer ring coil（First inductance-coupled coil）17 first state power less than its second state power, inner ring coil（Second inductance-coupled coil）15 first state power more than its second state power.Controller is connected with the power divider, for being controlled to the switching between each working condition of power divider.
Fig. 3 is the power of inner ring coil 15（Power distribution）The schematic diagram for changing over time.From the T1 stages at 0 to moment, power divider is in first state.In the state, the power of inner ring coil accounts for general power（The power output of above-mentioned radio frequency power source）75%, the power of outer ring coil only accounts for the 25% of general power.This causes that the plasma density of pending substrate middle section is significantly greater than the plasma density in pending basal edge region, and then causes that the processing speed of middle section is more than fringe region.From moment T1 to the stage at moment T2, power divider is in the second state.In the state, the power of inner ring coil accounts for the 40% of general power, and the power of outer ring coil only accounts for the 60% of general power.This causes that the plasma density of pending substrate middle section is significantly less than the plasma density in pending basal edge region, and then causes that the processing speed of middle section is less than fringe region.First state is alternately performed so that middle section tends to equal with the processing speed of fringe region with the second state.
Power allocation scheme shown in Fig. 3 is an example in feasible program.In other embodiments, other power distribution method can be taken.Such as, if the processing speed of middle section is too fast（For fringe region）, then can by turning down first state and/or the second state in inner ring coil power（Ratio shared by power）To reduce the processing speed of middle section, the processing speed of middle section can be also reduced by the duration for shortening first state and/or the duration for lengthening the second state.Adjustment to edge regional processing speed, it is similar with its, repeat no more.
Illustrate a bit, the number of inductance-coupled coil can also be more in addition to two be described above, such as, and 3.Specifically, can be in the first inductance-coupled coil（The coil of outermost）With the second inductance-coupled coil（Most interior coil）Between set the 3rd inductance-coupled coil.In addition, the structure of each inductance-coupled coil may be either planar spiral structures, or spiral tube structure.
Moreover, each inductance-coupled coil may be configured as can in the vertical direction movement（Both can move up, can also move down）.Also, the movement of each inductance-coupled coil is preferably separate to carry out.Because the uniformity of height plasma distribution of the inductance-coupled coil at the top of reaction chamber also has a significant effect, thus, each inductance-coupled coil is set to moving up and down, can also be conducive to the uniformity of each regional processing speed.
The method that each device described above carries out corona treatment generally may include following steps：
Pending substrate is arranged at the surface of wafer-supporting platform；
To being passed through gas in reaction chamber；
Power divider is worked a period of time in first state, then switch it to the second operation, or, make power divider switch it to first state work for a period of time, then in the second operation；Gaseous plasma in reaction chamber is formed plasma by some inductance-coupled coils being connected with power divider；
Pending substrate is processed using the plasma.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, without departing from the spirit and scope of the present invention, can be made various changes or modifications, therefore protection scope of the present invention should be defined by claim limited range.
Claims (10)
1. a kind of plasma processing apparatus, it is characterised in that including：
Reaction chamber；
Wafer-supporting platform in the reaction chamber, the wafer-supporting platform is used to place pending substrate；
It is arranged at some inductance-coupled coils in concentric distribution at the top of the reaction chamber, the inductance-coupled coil is relative with the wafer-supporting platform, for by the gaseous plasma in reaction chamber, some inductance-coupled coils at least include the first inductance-coupled coil and the second inductance-coupled coil in first inductance-coupled coil, and first inductance-coupled coil surrounds second inductance-coupled coil；
Radio frequency power source；
Power divider, it is connected between the radio frequency power source and some inductance-coupled coils, for giving each inductance-coupled coil by the power distribution of radio frequency power source, the power divider at least has two kinds of working conditions --- first state and the second state, first inductance-coupled coil is less than its power in the second state in the power of first state, and the second inductance-coupled coil is more than its power in the second state in the power of first state；
Controller, is connected with the power divider, for being controlled to the switching between each working condition of power divider.
2. plasma processing apparatus as claimed in claim 1, it is characterised in that some inductance-coupled coils also include the 3rd inductance-coupled coil, the 3rd inductance-coupled coil is arranged between first inductance-coupled coil and second inductance-coupled coil.
3. plasma processing apparatus as claimed in claim 1, it is characterised in that the structure of the inductance-coupled coil is planar spiral structures or spiral tube structure.
4. plasma processing apparatus as claimed in claim 1, it is characterised in that some inductance-coupled coils can in the vertical direction movement.
5. plasma processing apparatus as claimed in claim 4, it is characterised in that the movement of each inductance-coupled coil is separate.
6. the method that a kind of use device as claimed in claim 1 carries out corona treatment, including：
Pending substrate is arranged at the surface of wafer-supporting platform；
To being passed through gas in reaction chamber；
Power divider is worked a period of time in first state, then switch it to the second operation, or, make power divider switch it to first state work for a period of time, then in the second operation；Gaseous plasma in reaction chamber is formed plasma by some inductance-coupled coils being connected with power divider；
Pending substrate is processed using the plasma.
7. method as claimed in claim 6, it is characterised in that some inductance-coupled coils also include the 3rd inductance-coupled coil, the 3rd inductance-coupled coil is arranged between first inductance-coupled coil and second inductance-coupled coil.
8. method as claimed in claim 6, it is characterised in that the structure of the inductance-coupled coil is planar spiral structures or spiral tube structure.
9. method as claimed in claim 6, it is characterised in that some inductance-coupled coils can in the vertical direction movement.
10. method as claimed in claim 9, it is characterised in that the movement of each inductance-coupled coil is separate.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511003672.9A CN106937472A (en) | 2015-12-29 | 2015-12-29 | Plasma processing apparatus and method of plasma processing |
| TW105135254A TWI614792B (en) | 2015-12-29 | 2016-10-31 | Plasma processing device and plasma processing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511003672.9A CN106937472A (en) | 2015-12-29 | 2015-12-29 | Plasma processing apparatus and method of plasma processing |
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| CN106937472A true CN106937472A (en) | 2017-07-07 |
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| CN201511003672.9A Pending CN106937472A (en) | 2015-12-29 | 2015-12-29 | Plasma processing apparatus and method of plasma processing |
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| TW (1) | TWI614792B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2695819C1 (en) * | 2018-07-30 | 2019-07-29 | Федеральное государственное бюджетное научное учреждение "Федеральный исследовательский центр Институт прикладной физики Российской академии наук" (ИПФ РАН) | Source of intense flows of low-temperature plasma with high degree of ionisation |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101853764A (en) * | 2009-03-31 | 2010-10-06 | 东京毅力科创株式会社 | Plasma processing apparatus |
| CN103026800A (en) * | 2010-07-30 | 2013-04-03 | 株式会社普来马特 | Rf power distribution device and rf power distribution method |
| KR20130078757A (en) * | 2011-12-30 | 2013-07-10 | 엘아이지에이디피 주식회사 | Apparatus for processing a substrate |
| CN103476196A (en) * | 2013-09-23 | 2013-12-25 | 中微半导体设备(上海)有限公司 | Plasma treatment device and plasma treatment method |
| CN104094385A (en) * | 2012-03-09 | 2014-10-08 | 威特尔有限公司 | Plasma processing method and substrate processing apparatus |
| CN104427736A (en) * | 2013-08-23 | 2015-03-18 | 日新电机株式会社 | Plasma processing apparatus |
| CN104616956A (en) * | 2013-11-05 | 2015-05-13 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma etching apparatus and plasma etching method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6507155B1 (en) * | 2000-04-06 | 2003-01-14 | Applied Materials Inc. | Inductively coupled plasma source with controllable power deposition |
| KR101007822B1 (en) * | 2003-07-14 | 2011-01-13 | 주성엔지니어링(주) | Apparatus of hybrid coupled plasma |
| US20110097901A1 (en) * | 2009-10-26 | 2011-04-28 | Applied Materials, Inc. | Dual mode inductively coupled plasma reactor with adjustable phase coil assembly |
| US20110094683A1 (en) * | 2009-10-26 | 2011-04-28 | Applied Materials, Inc. | Rf feed structure for plasma processing |
-
2015
- 2015-12-29 CN CN201511003672.9A patent/CN106937472A/en active Pending
-
2016
- 2016-10-31 TW TW105135254A patent/TWI614792B/en active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101853764A (en) * | 2009-03-31 | 2010-10-06 | 东京毅力科创株式会社 | Plasma processing apparatus |
| CN103026800A (en) * | 2010-07-30 | 2013-04-03 | 株式会社普来马特 | Rf power distribution device and rf power distribution method |
| KR20130078757A (en) * | 2011-12-30 | 2013-07-10 | 엘아이지에이디피 주식회사 | Apparatus for processing a substrate |
| CN104094385A (en) * | 2012-03-09 | 2014-10-08 | 威特尔有限公司 | Plasma processing method and substrate processing apparatus |
| CN104427736A (en) * | 2013-08-23 | 2015-03-18 | 日新电机株式会社 | Plasma processing apparatus |
| CN103476196A (en) * | 2013-09-23 | 2013-12-25 | 中微半导体设备(上海)有限公司 | Plasma treatment device and plasma treatment method |
| CN104616956A (en) * | 2013-11-05 | 2015-05-13 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma etching apparatus and plasma etching method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2695819C1 (en) * | 2018-07-30 | 2019-07-29 | Федеральное государственное бюджетное научное учреждение "Федеральный исследовательский центр Институт прикладной физики Российской академии наук" (ИПФ РАН) | Source of intense flows of low-temperature plasma with high degree of ionisation |
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| Publication number | Publication date |
|---|---|
| TWI614792B (en) | 2018-02-11 |
| TW201724166A (en) | 2017-07-01 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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Application publication date: 20170707 |