CN106937472A - Plasma processing apparatus and method of plasma processing - Google Patents

Plasma processing apparatus and method of plasma processing Download PDF

Info

Publication number
CN106937472A
CN106937472A CN201511003672.9A CN201511003672A CN106937472A CN 106937472 A CN106937472 A CN 106937472A CN 201511003672 A CN201511003672 A CN 201511003672A CN 106937472 A CN106937472 A CN 106937472A
Authority
CN
China
Prior art keywords
inductance
coupled
coupled coil
power
state
Prior art date
Application number
CN201511003672.9A
Other languages
Chinese (zh)
Inventor
周虎
刘身健
谢小兵
严利均
Original Assignee
中微半导体设备(上海)有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 中微半导体设备(上海)有限公司 filed Critical 中微半导体设备(上海)有限公司
Priority to CN201511003672.9A priority Critical patent/CN106937472A/en
Publication of CN106937472A publication Critical patent/CN106937472A/en

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H2001/4645Radiofrequency discharges
    • H05H2001/4652Inductively coupled
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H2001/4645Radiofrequency discharges
    • H05H2001/4682Associated power generators, e. G. Circuits, matching networks

Abstract

The present invention provides a kind of plasma processing apparatus and method, is used to improve the uniformity of plasma distribution, wherein, described device includes:Reaction chamber;Wafer-supporting platform in reaction chamber, for placing pending substrate;In some inductance-coupled coils of concentric distribution, for by the gaseous plasma in reaction chamber, including first, second inductance-coupled coil;Radio frequency power source;Power divider, it is connected between radio frequency power source and some inductance-coupled coils, for giving each inductance-coupled coil by the power distribution of radio frequency power source, the power divider at least has two kinds of working conditions --- first state and the second state, first inductance-coupled coil is less than its power in the second state in the power of first state, and the second inductance-coupled coil is more than its power in the second state in the power of first state;Controller, is connected with power divider, for being controlled to the switching between each working condition of power divider.

Description

Plasma processing apparatus and method of plasma processing

Technical field

The present invention relates to technical field of manufacturing semiconductors, more particularly to a kind of plasma processing apparatus and corona treatment method.

Background technology

Plasma processing apparatus are widely used in the manufacturing process of integrated circuit, such as deposit, etch, wherein, inductive type plasma(ICP, Inductively Coupled Plasma)Device is one of mainstream technology in plasma processing apparatus, and its principle is mainly the high-frequency alternating magnetic field for using radio-frequency power driving inductance-coupled coil generation stronger so that the reacting gas of low pressure is ionized generation plasma.Contain substantial amounts of electronics, ion, the atom of excitation state, molecule and free radical isoreactivity particle in plasma, above-mentioned active particle can occur various physical and chemical reactions with the surface of pending wafer, so that the pattern of crystal column surface changes, that is, complete etching process;In addition, above-mentioned active ion has activity higher than conventional gaseous reactant, the chemical reaction between reacting gas can be promoted, you can to realize plasma enhanced chemical vapor deposition(PECVD).

Fig. 1 is a kind of cross section structure schematic diagram of inductance coupling plasma processing device of prior art, including:Reaction chamber 10;Wafer-supporting platform 11 in the reaction chamber 10, for carrying and fixing wafer 14;It is arranged at the inductance-coupled coil 12 at the top of reaction chamber 10;The power supply 13 being connected with inductance-coupled coil 12, for providing radio-frequency power to the inductance-coupled coil 12.

When the inductance coupling plasma processing device works, the power supply 13 can opened(on)And closing(off)Between switch so that realize to inductance-coupled coil 12 provide radio-frequency power so that the inductance-coupled coil 12 can produce magnetic field.The magnetic field ionization that the reacting gas of reaction chamber 10 is produced by the inductance-coupled coil 12 is input to, plasma can be formed.By taking etching technics as an example, in the case where being biased to the wafer-supporting platform 11, the plasma is influenceed by the bias of the wafer-supporting platform 11 and is bombarded to wafer 14, to perform etching technique.

However, in existing inductance coupling plasma processing device, the skewness of plasma causes the result of plasma treatment uneven.

The content of the invention

A kind of method that the problem that the present invention is solved is to provide plasma processing apparatus and corona treatment, makes the plasma in the plasma processing apparatus be more evenly distributed, and the effect of corona treatment is more preferable.

To solve the above problems, the present invention provides a kind of plasma processing apparatus, and it includes:

Reaction chamber;

Wafer-supporting platform in the reaction chamber, the wafer-supporting platform is used to place pending substrate;

It is arranged at some inductance-coupled coils in concentric distribution at the top of the reaction chamber, the inductance-coupled coil is relative with the wafer-supporting platform, for by the gaseous plasma in reaction chamber, some inductance-coupled coils at least include the first inductance-coupled coil and the second inductance-coupled coil in first inductance-coupled coil, and first inductance-coupled coil surrounds second inductance-coupled coil;

Radio frequency power source;

Power divider, it is connected between the radio frequency power source and some inductance-coupled coils, for giving each inductance-coupled coil by the power distribution of radio frequency power source, the power divider at least has two kinds of working conditions --- first state and the second state, first inductance-coupled coil is less than its power in the second state in the power of first state, and the second inductance-coupled coil is more than its power in the second state in the power of first state;

Controller, is connected with the power divider, for being controlled to the switching between each working condition of power divider.

Optionally, some inductance-coupled coils also include the 3rd inductance-coupled coil, and the 3rd inductance-coupled coil is arranged between first inductance-coupled coil and second inductance-coupled coil.

Optionally, the structure of the inductance-coupled coil is planar spiral structures or spiral tube structure.

Optionally, some inductance-coupled coils can in the vertical direction movement.

Optionally, the movement of each inductance-coupled coil is separate.

The present invention also provides a kind of method for carrying out corona treatment using device as described above, and it includes:

Pending substrate is arranged at the surface of wafer-supporting platform;

To being passed through gas in reaction chamber;

Power divider is worked a period of time in first state, then switch it to the second operation, or, make power divider switch it to first state work for a period of time, then in the second operation;Gaseous plasma in reaction chamber is formed plasma by some inductance-coupled coils being connected with power divider;

Pending substrate is processed using the plasma.

Optionally, some inductance-coupled coils also include the 3rd inductance-coupled coil, and the 3rd inductance-coupled coil is arranged between first inductance-coupled coil and second inductance-coupled coil.

Optionally, the structure of the inductance-coupled coil is planar spiral structures or spiral tube structure.

Optionally, some inductance-coupled coils can in the vertical direction movement.

Optionally, the movement of each inductance-coupled coil is separate.

Brief description of the drawings

Fig. 1 is a kind of cross section structure schematic diagram of inductance coupling plasma processing device of prior art;

Fig. 2 is the cross section structure schematic diagram of the embodiment of plasma processing apparatus of the present invention;

Fig. 3 is the schematic diagram that changes over time of power of inner ring coil.

Specific embodiment

As stated in the Background Art, in existing inductance coupling plasma processing device, the skewness of plasma causes the result of plasma treatment uneven.

Found by research, please continue to refer to Fig. 1, plasma is formed because the magnetic field that the reacting gas for being input into reaction chamber 10 is produced by the inductance-coupled coil 12 ionizes, therefore the distribution of plasma can be influenceed by the Distribution of Magnetic Field situation that the inductance-coupled coil 12 is produced.Wherein, due to the generally planar spiral winding of the inductance-coupled coil 12(spiral coils)Or helix tube(solenoid coils), then closer to the center of circle of the inductance-coupled coil 12, the magnetic field intensity that the inductance-coupled coil 12 is produced is stronger.And the inductance-coupled coil 12 is oppositely arranged with the wafer-supporting platform 11, so that in the reaction chamber 10, area plasma volume density near the inductance-coupled coil 12 and the center of wafer-supporting platform 11 is higher, and the area plasma volume density near the inductance-coupled coil 12 and the edge of wafer-supporting platform 11 is relatively low.

In order to improve the uniformity of the plasma density distribution in reaction chamber, the present invention provides a kind of plasma processing apparatus, as shown in Fig. 2 it is including reaction chamber 10, some inductance-coupled coils, radio frequency power source, power divider and controller etc..Wherein, there is wafer-supporting platform 11, the surface of the wafer-supporting platform 11 is used to place pending substrate in reaction chamber 10(Such as wafer)14.Some inductance-coupled coils are arranged at the top of reaction chamber 10, and relative with the wafer-supporting platform 11 in distribution with one heart, for by the gaseous plasma in reaction chamber.In the present embodiment, two inductance-coupled coils are had:Outer ring coil(First inductance-coupled coil)17 and inner ring coil(Second inductance-coupled coil)15, wherein, outer ring coil 17 is located at the periphery of inner ring coil 15 and surrounds the inner ring coil 15.

Radio frequency power source is used to provide RF energy for some inductance-coupled coils.Power divider is connected between the radio frequency power source and some inductance-coupled coils, for giving each inductance-coupled coil by the power distribution of radio frequency power source, the power divider at least has two kinds of working conditions --- first state and the second state, outer ring coil(First inductance-coupled coil)17 first state power less than its second state power, inner ring coil(Second inductance-coupled coil)15 first state power more than its second state power.Controller is connected with the power divider, for being controlled to the switching between each working condition of power divider.

Fig. 3 is the power of inner ring coil 15(Power distribution)The schematic diagram for changing over time.From the T1 stages at 0 to moment, power divider is in first state.In the state, the power of inner ring coil accounts for general power(The power output of above-mentioned radio frequency power source)75%, the power of outer ring coil only accounts for the 25% of general power.This causes that the plasma density of pending substrate middle section is significantly greater than the plasma density in pending basal edge region, and then causes that the processing speed of middle section is more than fringe region.From moment T1 to the stage at moment T2, power divider is in the second state.In the state, the power of inner ring coil accounts for the 40% of general power, and the power of outer ring coil only accounts for the 60% of general power.This causes that the plasma density of pending substrate middle section is significantly less than the plasma density in pending basal edge region, and then causes that the processing speed of middle section is less than fringe region.First state is alternately performed so that middle section tends to equal with the processing speed of fringe region with the second state.

Power allocation scheme shown in Fig. 3 is an example in feasible program.In other embodiments, other power distribution method can be taken.Such as, if the processing speed of middle section is too fast(For fringe region), then can by turning down first state and/or the second state in inner ring coil power(Ratio shared by power)To reduce the processing speed of middle section, the processing speed of middle section can be also reduced by the duration for shortening first state and/or the duration for lengthening the second state.Adjustment to edge regional processing speed, it is similar with its, repeat no more.

Illustrate a bit, the number of inductance-coupled coil can also be more in addition to two be described above, such as, and 3.Specifically, can be in the first inductance-coupled coil(The coil of outermost)With the second inductance-coupled coil(Most interior coil)Between set the 3rd inductance-coupled coil.In addition, the structure of each inductance-coupled coil may be either planar spiral structures, or spiral tube structure.

Moreover, each inductance-coupled coil may be configured as can in the vertical direction movement(Both can move up, can also move down).Also, the movement of each inductance-coupled coil is preferably separate to carry out.Because the uniformity of height plasma distribution of the inductance-coupled coil at the top of reaction chamber also has a significant effect, thus, each inductance-coupled coil is set to moving up and down, can also be conducive to the uniformity of each regional processing speed.

The method that each device described above carries out corona treatment generally may include following steps:

Pending substrate is arranged at the surface of wafer-supporting platform;

To being passed through gas in reaction chamber;

Power divider is worked a period of time in first state, then switch it to the second operation, or, make power divider switch it to first state work for a period of time, then in the second operation;Gaseous plasma in reaction chamber is formed plasma by some inductance-coupled coils being connected with power divider;

Pending substrate is processed using the plasma.

Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, without departing from the spirit and scope of the present invention, can be made various changes or modifications, therefore protection scope of the present invention should be defined by claim limited range.

Claims (10)

1. a kind of plasma processing apparatus, it is characterised in that including:
Reaction chamber;
Wafer-supporting platform in the reaction chamber, the wafer-supporting platform is used to place pending substrate;
It is arranged at some inductance-coupled coils in concentric distribution at the top of the reaction chamber, the inductance-coupled coil is relative with the wafer-supporting platform, for by the gaseous plasma in reaction chamber, some inductance-coupled coils at least include the first inductance-coupled coil and the second inductance-coupled coil in first inductance-coupled coil, and first inductance-coupled coil surrounds second inductance-coupled coil;
Radio frequency power source;
Power divider, it is connected between the radio frequency power source and some inductance-coupled coils, for giving each inductance-coupled coil by the power distribution of radio frequency power source, the power divider at least has two kinds of working conditions --- first state and the second state, first inductance-coupled coil is less than its power in the second state in the power of first state, and the second inductance-coupled coil is more than its power in the second state in the power of first state;
Controller, is connected with the power divider, for being controlled to the switching between each working condition of power divider.
2. plasma processing apparatus as claimed in claim 1, it is characterised in that some inductance-coupled coils also include the 3rd inductance-coupled coil, the 3rd inductance-coupled coil is arranged between first inductance-coupled coil and second inductance-coupled coil.
3. plasma processing apparatus as claimed in claim 1, it is characterised in that the structure of the inductance-coupled coil is planar spiral structures or spiral tube structure.
4. plasma processing apparatus as claimed in claim 1, it is characterised in that some inductance-coupled coils can in the vertical direction movement.
5. plasma processing apparatus as claimed in claim 4, it is characterised in that the movement of each inductance-coupled coil is separate.
6. the method that a kind of use device as claimed in claim 1 carries out corona treatment, including:
Pending substrate is arranged at the surface of wafer-supporting platform;
To being passed through gas in reaction chamber;
Power divider is worked a period of time in first state, then switch it to the second operation, or, make power divider switch it to first state work for a period of time, then in the second operation;Gaseous plasma in reaction chamber is formed plasma by some inductance-coupled coils being connected with power divider;
Pending substrate is processed using the plasma.
7. method as claimed in claim 6, it is characterised in that some inductance-coupled coils also include the 3rd inductance-coupled coil, the 3rd inductance-coupled coil is arranged between first inductance-coupled coil and second inductance-coupled coil.
8. method as claimed in claim 6, it is characterised in that the structure of the inductance-coupled coil is planar spiral structures or spiral tube structure.
9. method as claimed in claim 6, it is characterised in that some inductance-coupled coils can in the vertical direction movement.
10. method as claimed in claim 9, it is characterised in that the movement of each inductance-coupled coil is separate.
CN201511003672.9A 2015-12-29 2015-12-29 Plasma processing apparatus and method of plasma processing CN106937472A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201511003672.9A CN106937472A (en) 2015-12-29 2015-12-29 Plasma processing apparatus and method of plasma processing

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201511003672.9A CN106937472A (en) 2015-12-29 2015-12-29 Plasma processing apparatus and method of plasma processing
TW105135254A TWI614792B (en) 2015-12-29 2016-10-31 Plasma processing device and plasma processing method

Publications (1)

Publication Number Publication Date
CN106937472A true CN106937472A (en) 2017-07-07

Family

ID=59458261

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201511003672.9A CN106937472A (en) 2015-12-29 2015-12-29 Plasma processing apparatus and method of plasma processing

Country Status (2)

Country Link
CN (1) CN106937472A (en)
TW (1) TWI614792B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2695819C1 (en) * 2018-07-30 2019-07-29 Федеральное государственное бюджетное научное учреждение "Федеральный исследовательский центр Институт прикладной физики Российской академии наук" (ИПФ РАН) Source of intense flows of low-temperature plasma with high degree of ionisation

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101853764A (en) * 2009-03-31 2010-10-06 东京毅力科创株式会社 Plasma processing apparatus
CN103026800A (en) * 2010-07-30 2013-04-03 株式会社普来马特 Rf power distribution device and rf power distribution method
KR20130078757A (en) * 2011-12-30 2013-07-10 엘아이지에이디피 주식회사 Apparatus for processing a substrate
CN103476196A (en) * 2013-09-23 2013-12-25 中微半导体设备(上海)有限公司 Plasma treatment device and plasma treatment method
CN104094385A (en) * 2012-03-09 2014-10-08 威特尔有限公司 Plasma processing method and substrate processing apparatus
CN104427736A (en) * 2013-08-23 2015-03-18 日新电机株式会社 Plasma processing apparatus
CN104616956A (en) * 2013-11-05 2015-05-13 北京北方微电子基地设备工艺研究中心有限责任公司 Plasma etching apparatus and plasma etching method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6507155B1 (en) * 2000-04-06 2003-01-14 Applied Materials Inc. Inductively coupled plasma source with controllable power deposition
KR101007822B1 (en) * 2003-07-14 2011-01-13 주성엔지니어링(주) Apparatus of hybrid coupled plasma
US20110094683A1 (en) * 2009-10-26 2011-04-28 Applied Materials, Inc. Rf feed structure for plasma processing
US20110097901A1 (en) * 2009-10-26 2011-04-28 Applied Materials, Inc. Dual mode inductively coupled plasma reactor with adjustable phase coil assembly

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101853764A (en) * 2009-03-31 2010-10-06 东京毅力科创株式会社 Plasma processing apparatus
CN103026800A (en) * 2010-07-30 2013-04-03 株式会社普来马特 Rf power distribution device and rf power distribution method
KR20130078757A (en) * 2011-12-30 2013-07-10 엘아이지에이디피 주식회사 Apparatus for processing a substrate
CN104094385A (en) * 2012-03-09 2014-10-08 威特尔有限公司 Plasma processing method and substrate processing apparatus
CN104427736A (en) * 2013-08-23 2015-03-18 日新电机株式会社 Plasma processing apparatus
CN103476196A (en) * 2013-09-23 2013-12-25 中微半导体设备(上海)有限公司 Plasma treatment device and plasma treatment method
CN104616956A (en) * 2013-11-05 2015-05-13 北京北方微电子基地设备工艺研究中心有限责任公司 Plasma etching apparatus and plasma etching method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2695819C1 (en) * 2018-07-30 2019-07-29 Федеральное государственное бюджетное научное учреждение "Федеральный исследовательский центр Институт прикладной физики Российской академии наук" (ИПФ РАН) Source of intense flows of low-temperature plasma with high degree of ionisation

Also Published As

Publication number Publication date
TW201724166A (en) 2017-07-01
TWI614792B (en) 2018-02-11

Similar Documents

Publication Publication Date Title
JP6202701B2 (en) Substrate processing apparatus, semiconductor device manufacturing method, and program
US20170092466A1 (en) Inductively coupled coil and inductively coupled plasma device using the same
US20160172160A1 (en) Plasma processing apparatus and plasma processing method
US5580385A (en) Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber
CN1257527C (en) Method and appts. for varying magnetic field to control volume of plasma
US5433812A (en) Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination
TWI427669B (en) Apparatus for treating large area substrate using hollow cathode plasma
JP2770753B2 (en) Plasma processing apparatus and plasma processing method
JP5554705B2 (en) Method and apparatus for substrate processing
JP4418534B2 (en) Plasma reactor with dielectric antenna supplying power through parallel plate electrodes
CN101785088B (en) Plasma processing method and plasma processing apparatus
KR100238627B1 (en) Plasma processing apparatus
CN101064238B (en) Plasma reactor apparatus with independent capacitive and toroidal plasma sources
KR101161911B1 (en) Plasma processing apparatus
CN1248549C (en) Induction coupling plasma generating equipment containing zigzag coil antenna
US5487785A (en) Plasma treatment apparatus
CN101426949B (en) Integrated capacitive and inductive power sources for a plasma etching chamber
TWI416623B (en) Inductively coupled dual zone processing chamber with single planar antenna
CN101194338B (en) High frequency-plasma source with plurality of out-of-phase electrodes
US8092605B2 (en) Magnetic confinement of a plasma
KR20170017749A (en) Systems and methods for reverse pulsing
US10262835B2 (en) Plasma processing equipment and plasma generation equipment
DE60033312T2 (en) Plasma treatment device and method
CN104465291B (en) Method and Apparatus for Controlling Substrate DC-Bias and Ion Energy and Angular Distribution During Substrate Etching
CN101990353B (en) Plasma processing apparatus and plasma processing method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information

Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai

Applicant after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd.

Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai

Applicant before: Advanced Micro-Fabrication Equipment (Shanghai) Inc.

Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai

Applicant after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd.

Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai

Applicant before: Advanced Micro-Fabrication Equipment (Shanghai) Inc.

CB02 Change of applicant information
RJ01 Rejection of invention patent application after publication

Application publication date: 20170707

RJ01 Rejection of invention patent application after publication