CN104900472A - Plasma processing method - Google Patents
Plasma processing method Download PDFInfo
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- CN104900472A CN104900472A CN201510198918.6A CN201510198918A CN104900472A CN 104900472 A CN104900472 A CN 104900472A CN 201510198918 A CN201510198918 A CN 201510198918A CN 104900472 A CN104900472 A CN 104900472A
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Abstract
The invention provides a plasma processing method. The plasma processing method comprises that a first frequency is obtained in advance, and the first frequency is the output frequency of a frequency-variable power source when the frequency-variable power source matches the impedance of a reaction chamber in the first plasma processing process; a second frequency is obtained in advance, and the second frequency is the output frequency of the frequency-variable power source when the frequency-variable power source matches the impedance of the reaction chamber in the second plasma processing process; first plasma processing is carried out on a substrate to be processed, and at the same time, an external control unit sets the output frequency of the frequency-variable power source as the first frequency so that the frequency-variable power source matches the impedance of the reaction chamber; and second plasma processing is carried out on the substrate to be processed, and at the same time, the external control unit sets the output frequency of the frequency-variable power source as the second frequency so that the frequency-variable power source matches the impedance of the reaction chamber. The plasma processing method can keep plasma stable and avoid plasma from quenching.
Description
Technical field
The present invention relates to field of semiconductor manufacture technology, particularly relate to a kind of method of plasma treatment.
Background technology
Plasma-treating technology for the manufacture of integrated circuit comprises plasma deposition process and plasma etch process etc.The principle of described plasma-treating technology comprises: use radio frequency power source to drive plasma producing apparatus (such as inductance-coupled coil) to produce stronger high-frequency alternating magnetic field, make the reacting gas of low pressure be ionized generation plasma.Atom containing a large amount of electronics, ion, excitation state in plasma, molecule and free radical isoreactivity particle, multiple physical and chemical reaction can be there is in described active particle with the surface of pending wafer, the pattern of crystal column surface is changed, namely completes plasma-treating technology.In addition, described active ion has higher activity than conventional gaseous reactant, can promote the chemical reaction between reacting gas, namely can realize plasma enhanced chemical vapor deposition (PECVD).
With inductively coupled plasma process (ICP, Inductively Coupled Plasma) device for example, please refer to Fig. 1, existing inductance coupling plasma processing device, comprising: reaction chamber 10; Be positioned at the wafer carrier 11 of described reaction chamber 10, for carrying and fixing wafer 14; Being arranged at the inductance-coupled coil 12 at reaction chamber 10 top, exciting as plasma for making reacting gas; By the power supply 13 that impedance matching unit 15 is connected with inductance-coupled coil 12, for providing radio-frequency power to described inductance-coupled coil 12.
When described inductance coupling plasma processing device work, described power supply 13 provides rf power signal by impedance matching unit 15 to inductance-coupled coil 12, and described rf power signal is pulse signal, described inductance-coupled coil 12 is made to produce magnetic field.The reacting gas being input to reaction chamber 10 is ionized by the magnetic field that described inductance-coupled coil 12 produces, and can form plasma.For etching technics, be applied in bias voltage in described wafer carrier 11, described plasma is subject to the bias voltage impact of described wafer carrier 11 and bombards to wafer 14, thus realizes the etching to wafer 14.
But in existing plasma-treating technology, the less stable of plasma, easily causes the result of plasma treatment bad.
Summary of the invention
The problem that the present invention solves is to provide a kind of method of plasma treatment, makes the improved stability of plasma, the Quality advance of plasma treatment.
For solving the problem, the invention provides a kind of method of plasma treatment, comprise: pending substrate, plasma processing apparatus and external control unit outside are provided, described plasma processing apparatus has variable ratio frequency changer power source, described external control unit outside is connected with variable ratio frequency changer power source, and described pending substrate is placed in the reaction chamber of plasma processing apparatus; Obtain first frequency in advance, described first frequency is in the first plasma treatment procedure, the output frequency of variable ratio frequency changer power source when variable ratio frequency changer power source and reaction chamber impedance matching; Obtain second frequency in advance, described second frequency is in the second plasma treatment procedure, the output frequency of variable ratio frequency changer power source when variable ratio frequency changer power source and reaction chamber impedance matching; First plasma treatment is carried out to described pending substrate, pass into the first reacting gas in reaction chamber, variable ratio frequency changer power source exports the first radio-frequency power to reaction chamber, make the output frequency of variable ratio frequency changer power source be first frequency by external control unit outside simultaneously, make variable ratio frequency changer power source and reaction chamber impedance matching; After carrying out described first plasma treatment, second plasma treatment is carried out to described pending substrate, pass into the second reacting gas in reaction chamber, variable ratio frequency changer power source exports the second radio-frequency power to reaction chamber, make the output frequency of variable ratio frequency changer power source be second frequency by external control unit outside simultaneously, make variable ratio frequency changer power source and reaction chamber impedance matching.
Optionally, described plasma treatment comprises the first plasma treatment and the second plasma treatment that circulate successively and carry out.
Optionally, also comprise: provide impedance matching unit, described impedance matching unit is connected between the variable ratio frequency changer power source of plasma processing apparatus and plasma generator.
Optionally, in described first plasma treatment procedure, described impedance matching unit is forbidden; In described second plasma treatment procedure, forbid described impedance matching unit.
Optionally, the method obtaining described first frequency is: carry out the first Pre-plasma process to described pending substrate, pass into the first reacting gas in reaction chamber, variable ratio frequency changer power source exports the first radio-frequency power to reaction chamber, described impedance matching unit is automatic frequency adjustment pattern, automatically the output frequency being regulated variable ratio frequency changer power source by described impedance matching unit is first frequency, makes variable ratio frequency changer power source and reaction chamber impedance matching.
Optionally, described first plasma treatment is identical with the first reactive gas species of the first Pre-plasma process; Described first plasma treatment is identical with the air pressure of the first Pre-plasma process; Described first plasma treatment is identical with the first radio-frequency power of the first Pre-plasma process.
Optionally, the method obtaining described second frequency is: carry out the second Pre-plasma process to described pending substrate, pass into the second reacting gas in reaction chamber, variable ratio frequency changer power source exports the second radio-frequency power to reaction chamber, described impedance matching unit is automatic frequency adjustment pattern, automatically the output frequency being regulated variable ratio frequency changer power source by described impedance matching unit is second frequency, makes variable ratio frequency changer power source and reaction chamber impedance matching.
Optionally, described second plasma treatment is identical with the second reactive gas species of the second Pre-plasma process; Described second plasma treatment is identical with the air pressure of the second Pre-plasma process; Described second plasma treatment is identical with the second radio-frequency power of the second Pre-plasma process.
Optionally, described first reacting gas is different with the kind of the second reacting gas.
Optionally, described first radio-frequency power is different with the second radio-frequency power.
Optionally, described first plasma treatment is different with the air pressure of the second plasma treatment.
Optionally, also comprise: for the bias power source of output offset power, described bias power is suitable for the bias voltage regulating pending substrate.
Optionally, the duration of described first plasma treatment is less than 1 second; The duration of described second plasma treatment is less than 1 second.
Compared with prior art, technical scheme of the present invention has the following advantages:
The present invention obtains in the first plasma treatment procedure in advance, be first frequency with the output frequency of the variable ratio frequency changer power source of reaction chamber impedance matching, obtaining in the second plasma treatment procedure in advance, is second frequency with the output frequency of the variable ratio frequency changer power source of reaction chamber impedance matching; Therefore in the first plasma treatment procedure, variable ratio frequency changer power source output frequency is made to be first frequency by external control unit outside, therefore variable ratio frequency changer power source and reaction chamber impedance matching in the first plasma treatment procedure, and the output frequency of variable ratio frequency changer power source keeps stable in the first plasma treatment procedure, avoid the output frequency big ups and downs of variable ratio frequency changer power source, thus prevent the plasma unstable in reaction chamber or plasma extinguishment.In the second plasma process, be second frequency by external control unit outside variable ratio frequency changer power source output frequency, therefore variable ratio frequency changer power source and reaction chamber impedance matching in the second plasma treatment procedure, and in the second plasma treatment procedure, the output frequency of variable ratio frequency changer power source keeps stable, avoids the output frequency big ups and downs of variable ratio frequency changer power source.And, when the first plasma treatment procedure changes the second plasma treatment procedure into, the output frequency of variable ratio frequency changer power source is changed to second frequency stably by first frequency, avoid the problem becoming the transition stage generation output frequency sudden change of the second plasma treatment in the first plasma treatment, avoid the output frequency generation big ups and downs of the variable ratio frequency changer power source under Auto-matching pattern, ensure that plasma sustained ignition, thus improve the stability of plasma, make the Quality advance of plasma treatment.
Further, the method obtaining first frequency is: carry out the first Pre-plasma process to described pending substrate, pass into the first reacting gas in reaction chamber, variable ratio frequency changer power source exports the first radio-frequency power to reaction chamber, described impedance matching unit is automatic frequency adjustment pattern, automatically the output frequency being regulated variable ratio frequency changer power source by described impedance matching unit is first frequency, makes variable ratio frequency changer power source and reaction chamber impedance matching.The accuracy of the first frequency adopting method provided by the invention to obtain is high, makes in the first plasma treatment procedure, when the output frequency of variable ratio frequency changer power source is first frequency, and variable ratio frequency changer power source and reaction chamber impedance matching.
Further, the method obtaining second frequency is: carry out the second Pre-plasma process to described pending substrate, pass into the second reacting gas in reaction chamber, variable ratio frequency changer power source exports the second radio-frequency power to reaction chamber, described impedance matching unit is automatic frequency adjustment pattern, automatically the output frequency being regulated variable ratio frequency changer power source by described impedance matching unit is second frequency, makes variable ratio frequency changer power source and reaction chamber impedance matching.The accuracy of the second frequency adopting method provided by the invention to obtain is high, makes in the second plasma treatment procedure, when the output frequency of variable ratio frequency changer power source is second frequency, and variable ratio frequency changer power source and reaction chamber impedance matching.
Accompanying drawing explanation
Fig. 1 is the cross section structure schematic diagram of inductance coupling plasma processing device;
Fig. 2 is plasma when running continuously, the RF frequency waveform figure that radio frequency power source exports;
Fig. 3 is the schematic flow sheet of the method for plasma processing of the embodiment of the present invention;
Fig. 4 is the cross section structure schematic diagram of the plasma processing apparatus of the present embodiment;
Fig. 5 to Fig. 7 is the cross-sectional view of the pending substrate of plasma treatment procedure of the present embodiment;
Fig. 8 is the frequency oscillogram that in the present embodiment plasma treatment procedure, variable ratio frequency changer power source exports.
Embodiment
As stated in the Background Art, in existing plasma-treating technology, the less stable of plasma, easily causes the result of plasma treatment bad.
Please continue to refer to Fig. 1, in existing plasma processing apparatus, power supply 13 provides radio-frequency power by matching unit 15 to the inductance-coupled coil 12 being arranged at reaction chamber 10 top, made to produce plasma in reaction chamber 10 by described inductance-coupled coil 12, the plasma therefore in described reaction chamber 10 is the load of described power supply 13.
Along with the carrying out of plasma-treating technology, often need to carry out multiple continuous print processing step, for adjacent two processing steps, the pulse signal frequency that power supply 13 exports needs to change, and, gas componant in reaction chamber 10, air pressure also can change with the change of technique, thus cause the impedance of the plasma in reaction chamber 10 to change; Meanwhile, described power supply 13 has fixing output impedance (such as 50 Ω).Therefore, easily mismatch is there is between the impedance of the plasma in the output impedance of easy power supply 13 and reaction chamber 10, transmission line for connecting power supply 13 and inductance-coupled coil 12 forms reflection power, the radio-frequency power that power supply 13 is exported cannot put on inductance-coupled coil 12 completely, easily causes the problem that plasma cannot be lighted.Therefore, described power supply 13 needs to be connected with inductance-coupled coil 12 by impedance matching unit 15, and impedance matching unit 15 is as shown in Figure 1 for impedance matching.Along with the carrying out of plasma-treating technology, the impedance of the plasma in reaction chamber 10 changes, described impedance matching unit 15 can regulate according to the change of described plasma impedance, make the impedance of described impedance matching unit 15 consistent with the output impedance of power supply 13 with the impedance sum of plasma in reaction chamber 10, thus realize impedance matching.
With reference to figure 2, Fig. 2 be plasma run continuously time, radio frequency power source export RF power waveform figure, due to adjacent two plasma process step P
awith step P
bbetween process conditions change greatly, such as, gas componant in reaction chamber 10, air pressure change are larger, plasma impedance in reaction chamber 10 is also sharply changed, when carrying out the Auto-matching of impedance between two processing steps, matching unit 15 (with reference to figure 2) can restart the impedance matching process of frequency because of change in the instantaneous impedance, the rf frequency causing power supply 13 to export to inductance-coupled coil 12 through impedance matching unit 15 has larger fluctuation, causes rf frequency that power supply is exported by impedance matching unit 15 by f
abe changed to f
bprocess in rf frequency fluctuation large.And, because power supply 13 is fluctuated comparatively greatly and speed by the rf frequency that matching unit 15 exports, impedance matching unit 15 cannot respond the acute variation of rf frequency in time, easily cause inductance-coupled coil 12 and power supply 13 mismatch and effectively can not export radio-frequency power, causing plasma extinguishment.
For solving the problem, the invention provides a kind of method of plasma treatment, with reference to the schematic flow sheet of the plasma treatment that figure 3, Fig. 3 provides for the embodiment of the present invention, comprising:
Step S1, provide pending substrate, plasma processing apparatus and external control unit outside, described plasma processing apparatus has variable ratio frequency changer power source, described external control unit outside is connected with variable ratio frequency changer power source, and described pending substrate is placed in the reaction chamber of plasma processing apparatus;
Step S2, obtain first frequency in advance, described first frequency is in the first plasma treatment procedure, the output frequency of variable ratio frequency changer power source when variable ratio frequency changer power source and reaction chamber impedance matching;
Step S3, obtain second frequency in advance, described second frequency is in the second plasma treatment procedure, the output frequency of variable ratio frequency changer power source when variable ratio frequency changer power source and reaction chamber impedance matching;
Step S4, the first plasma treatment is carried out to described pending substrate, pass into the first reacting gas in reaction chamber, variable ratio frequency changer power source exports the first radio-frequency power to reaction chamber, make the output frequency of variable ratio frequency changer power source be first frequency by external control unit outside simultaneously, make variable ratio frequency changer power source and reaction chamber impedance matching;
Step S5, carry out described first plasma treatment after, second plasma treatment is carried out to described pending substrate, pass into the second reacting gas in reaction chamber, variable ratio frequency changer power source exports the second radio-frequency power to reaction chamber, make the output frequency of variable ratio frequency changer power source be second frequency by external control unit outside simultaneously, make variable ratio frequency changer power source and reaction chamber impedance matching.
The present invention obtains in the first plasma treatment procedure in advance, be first frequency with the output frequency of the variable ratio frequency changer power source of reaction chamber impedance matching, obtaining in the second plasma treatment procedure in advance, is second frequency with the output frequency of the variable ratio frequency changer power source of reaction chamber impedance matching; Therefore in the first plasma treatment procedure, variable ratio frequency changer power source output frequency is made to be first frequency by external control unit outside, therefore variable ratio frequency changer power source and reaction chamber impedance matching in the first plasma treatment procedure, and the output frequency of variable ratio frequency changer power source keeps stable in the first plasma treatment procedure, avoid the output frequency big ups and downs of variable ratio frequency changer power source, thus prevent the plasma unstable in reaction chamber or plasma extinguishment.In the second plasma process, be second frequency by external control unit outside variable ratio frequency changer power source output frequency, therefore variable ratio frequency changer power source and reaction chamber impedance matching in the second plasma treatment procedure, and in the second plasma treatment procedure, the output frequency of variable ratio frequency changer power source keeps stable, avoids the output frequency big ups and downs of variable ratio frequency changer power source.And, first plasma treated become the second plasma treatment procedure time, the output frequency of variable ratio frequency changer power source is changed to second frequency stably by first frequency, avoid the problem becoming the transition stage generation output frequency sudden change of the second plasma treatment in the first plasma treatment, avoid the output frequency generation big ups and downs of the variable ratio frequency changer power source under Auto-matching pattern, ensure that plasma sustained ignition, thus improve the stability of plasma, make the Quality advance of plasma treatment.
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail specific embodiments of the invention below in conjunction with accompanying drawing.
Fig. 4 to Fig. 8 is the schematic diagram of the process of the plasma treatment of the embodiment of the present invention, and wherein, Fig. 4 is the cross section structure schematic diagram of the plasma processing apparatus of the present embodiment; Fig. 5 to Fig. 7 is the cross-sectional view of the pending substrate of plasma treatment procedure of the present embodiment; Fig. 8 is the frequency oscillogram that in the present embodiment plasma treatment procedure, variable ratio frequency changer power source exports.
Please refer to Fig. 4 and Fig. 5, pending substrate 201 is provided; Described pending substrate 201 is placed in the reaction chamber 200 of plasma processing apparatus.
Described reaction chamber 200 is a part for plasma processing apparatus.In the present embodiment, described plasma processing apparatus has variable ratio frequency changer power source 204, and described plasma processing apparatus comprises: reaction chamber 200; Be positioned at the wafer carrier 202 of described reaction chamber 200, described wafer carrier 202 is for carrying pending substrate 201; Be arranged at the plasma generator 203 at reaction chamber 200 top, described plasma generator 203 excites as plasma for making reacting gas; The variable ratio frequency changer power source 204 be electrically connected with described plasma generator 203, described variable ratio frequency changer power source is used for providing radio-frequency power to plasma generator 203; The bias power source 205 for output offset power be connected with wafer carrier 202, described bias power source 205 is suitable for the bias voltage regulating pending substrate 201.
In the present embodiment, also provide impedance matching unit 206, described impedance matching unit 206 is connected between plasma generator 203 and variable ratio frequency changer power source 204.
The radio-frequency power that described variable ratio frequency changer power source 204 exports is provided to plasma generator 203 by impedance matching unit 206, make the reacting gas in reaction chamber 200 plasmarized, described variable ratio frequency changer power source 204 is for having the pulse signal of certain rf frequency.The plasma of described plasma generator 203, reaction chamber 200 and inside is the load of variable ratio frequency changer power source 204, described impedance matching unit 206 can detect the load impedance of plasma of plasma generator 203, reaction chamber 200 and inside, make described load impedance identical with the output impedance of variable ratio frequency changer power source 204 with the impedance sum of impedance matching unit 206, thus realize impedance matching.In addition, described bias power source 205 can apply bias voltage to wafer carrier 202, plasma then in reaction chamber 200 is subject to the electric field force effect of described bias voltage, can move to described wafer carrier 202, thus realizes the plasma-treating technology to pending substrate 201.In the present embodiment, described plasma-treating technology is plasma etching.
The first Pre-plasma process and the second Pre-plasma process are carried out in rear extended meeting in plasma processing apparatus, in the first Pre-plasma process and the second Pre-plasma processing procedure, described impedance matching unit 206 opens automatic frequency adjustment pattern, for obtaining the first frequency that in the first Pre-plasma processing procedure, variable ratio frequency changer power source 204 exports, and described first frequency and reaction chamber 200 impedance matching; For obtaining the second frequency that in the second Pre-plasma processing procedure, variable ratio frequency changer power source 204 exports, and described second frequency and reaction chamber 200 impedance matching.
External control unit outside 207 is also provided, described external control unit outside 207 is connected with variable ratio frequency changer power source 204, follow-uply carrying out in the first plasma treatment and the second plasma treatment procedure, made the output frequency of variable ratio frequency changer power source 204 stable output by external control unit outside 207, and make variable ratio frequency changer power source 204 and reaction chamber 200 impedance matching.
In the present embodiment, described plasma generator 203 is inductance-coupled coil, after described inductance-coupled coil receives radio-frequency power, can produce magnetic field, and described magnetic field can make the gas ionization of input reaction chamber 200 be plasma.In other embodiments, described inductance-coupled coil can also be surrounded on the wall outer surface of described reaction chamber 200, makes the reacting gas passed in reaction chamber 200 be ionized into plasma.
In another embodiment, described plasma processing apparatus is capacitance coupling plasma processing unit (CCP, Capacitance Coupled Plasma), the bottom electrode comprising reaction chamber, be arranged at the top electrode at reaction chamber top and be arranged at bottom reaction chamber, and the variable ratio frequency changer power source described in the embodiment of the present invention can be applied to top electrode or bottom electrode.Concrete, described capacitance coupling plasma processing unit also comprises source radio frequency source and biased radio frequency source, and described source radio frequency source is for generation of plasma, and described source radio frequency source can be applied to top electrode or bottom electrode; Described biased radio frequency source is for controlling bias power, and described biased radio frequency source can be applied to bottom electrode; Wherein, the frequency of described source radio frequency source is higher, and the frequency of biased radio frequency power source is lower.In this embodiment, described variable ratio frequency changer power source is the source radio frequency source that frequency is higher, and described variable ratio frequency changer power source is applied to top electrode.
In the present embodiment, with reference to figure 5, described pending substrate 201 comprises: substrate 300; Be positioned at layer to be etched 301 of described substrate 300 surface; And being positioned at the mask layer 302 on described 301 surfaces layer to be etched, described mask layer 302 exposes part 301 surfaces layer to be etched.In the present embodiment, plasma etch process needs for mask, etch described layer to be etched 301 until expose substrate 300 surface with described mask layer 302.Described layer to be etched 301 is single layer structure or laminated construction; The described material of layer to be etched 301 is silica, silicon nitride, silicon oxynitride, high K medium material, low k dielectric materials, Cu, Al, W, TiN or WN.
The material of described mask layer 302 is different from the material of layer to be etched 301.In the present embodiment, in order to improve the described layer to be etched 301 pattern quality formed of etching, described plasma treatment comprises the first plasma treatment and the second plasma treatment that circulate successively and carry out.
Then, obtain first frequency in advance, described first frequency is in the first plasma treatment procedure, the output frequency of variable ratio frequency changer power source when variable ratio frequency changer power source 204 and reaction chamber 200 impedance matching; Obtain second frequency in advance, described second frequency is in the second plasma treatment procedure, the output frequency of variable ratio frequency changer power source when variable ratio frequency changer power source 204 and reaction chamber 200 impedance matching.
Concrete, the method obtaining described first frequency is: carry out the first Pre-plasma process to described pending substrate 300, pass into the first reacting gas in reaction chamber 200, variable ratio frequency changer power source 204 exports the first radio-frequency power to reaction chamber 200, described impedance matching unit 206 is automatic frequency adjustment pattern, automatically the output frequency being regulated variable ratio frequency changer power source 204 by described impedance matching unit 206 is first frequency, makes variable ratio frequency changer power source 204 and reaction chamber 200 impedance matching.
It should be noted that, described first Pre-plasma process is identical with the first reactive gas species of the first plasma treatment; Described first Pre-plasma process is identical with the air pressure of the first plasma treatment; Described first Pre-plasma process is identical with the first radio-frequency power of the first plasma treatment.
Concrete, the method obtaining described second frequency is: carry out the second Pre-plasma process to described pending substrate 300, pass into the second reacting gas in reaction chamber 200, variable ratio frequency changer power source 204 exports the second radio-frequency power to reaction chamber 200, described impedance matching unit 206 is automatic frequency adjustment pattern, automatically the output frequency being regulated variable ratio frequency changer power source 204 by described impedance matching unit 206 is second frequency, makes variable ratio frequency changer power source 204 and reaction chamber 200 impedance matching.
It should be noted that, described second Pre-plasma process is identical with the second reactive gas species of the second plasma treatment; Described second Pre-plasma process is identical with the air pressure of the second plasma treatment; Described second Pre-plasma process is identical with the second radio-frequency power of the second plasma treatment.
Further, described first gas is different with the kind of the second gas; Or described first radio-frequency power is different with the second radio-frequency power; Or described first Pre-plasma process is different with the air pressure of the second Pre-plasma process.
Thus, can be informed in and carry out in plasma-treating technology flow process to layer to be etched 201, carrying out in the first plasma-treating technology with the output frequency of variable ratio frequency changer power source 204 during reaction chamber 200 impedance matching is first frequency; Carrying out in the second plasma-treating technology with the output frequency of variable ratio frequency changer power source 204 during reaction chamber 200 impedance matching is second frequency.
With reference to figure 4, Fig. 6 and Fig. 8, the first plasma treatment P is carried out to described pending substrate 201
1pass into the first reacting gas in reaction chamber 200, variable ratio frequency changer power source 204 exports the first radio-frequency power to reaction chamber 200, makes the output frequency of variable ratio frequency changer power source be first frequency by external control unit outside 207 simultaneously, makes variable ratio frequency changer power source 204 and reaction chamber impedance matching.
Described first plasma treatment P
1duration be less than 1 second, be such as 0.1 second, 0.2 second, 0.5 second or 0.8 second.
In the present embodiment, described plasma-treating technology is plasma etching, at the first plasma treatment P
1in process, with described mask layer 302 for mask, the first reacting gas that layer to be etched 301. of etched portions thickness passes into reaction chamber 300 can be used in etching layer to be etched 301 of described segment thickness.
The first radio-frequency power that described variable ratio frequency changer power source 204 exports is used for making the first reacting gas plasmarized.At described first plasma treatment P
1in process, forbid described impedance matching unit 206, make variable ratio frequency changer power source 204 export first frequency f by external control unit outside 207
1, described first frequency f
1be the aforementioned first frequency obtained by the first Pre-plasma process.
Described first plasma treatment P
1identical with the first reactive gas species of the first Pre-plasma process; Described first plasma treatment P
1identical with the air pressure of the first Pre-plasma process; Described first plasma treatment P
1identical with the first radio-frequency power of the first Pre-plasma process; Therefore, the present embodiment first plasma treatment P
1identical with the process conditions of the first Pre-plasma process, at the first plasma treatment P
1in process, when the output frequency of variable ratio frequency changer power source 204 is first frequency f
1time, reaction chamber 200 impedance and variable ratio frequency changer power source 204 matches impedances.
Further, the first plasma treatment P of the present embodiment
1in process, variable ratio frequency changer power source 204 remains stable output first frequency f
1, thus make to produce stable plasma in reaction chamber 200, the frequency generation big ups and downs avoiding variable ratio frequency changer power source 204 to export, avoid the plasma extinguishment problem produced in the starting stage of the first plasma treatment P1 successively.
If in the first plasma treatment procedure, impedance matching mode between variable ratio frequency changer power source and reaction chamber is by impedance matching unit Auto-matching, duration then due to the first plasma treatment is too short, process conditions in reaction chamber change greatly, impedance matching unit is difficult to regulate the output frequency needed for the acquisition of variable ratio frequency changer power source in time, cause the fluctuation of the output frequency of variable ratio frequency changer power source violent, cause the problem of plasma unstable in reaction chamber or plasma extinguishment.
With reference to figure 4, Fig. 7 and Fig. 8, after carrying out described first plasma treatment, the second plasma treatment P is carried out to described pending substrate 201
2, pass into the second reacting gas in reaction chamber 200, variable ratio frequency changer power source 204 exports the second radio-frequency power to reaction chamber 200, makes the output frequency of variable ratio frequency changer power source 204 be second frequency f by external control unit outside 207 simultaneously
2, make variable ratio frequency changer power source 204 and reaction chamber 200 impedance matching.
Described second plasma treatment P
2duration be 1 second, be such as 0.1 second, 0.2 second, 0.5 second or 0.8 second.
In the present embodiment, described plasma-treating technology is plasma etching, at the second plasma treatment P
2in process, continue with mask layer 302 for mask, etching removes layer to be etched 301 of segment thickness.Described the second reacting gas passed in reaction chamber 200 etches layer to be etched 301 for continuing.
In the present embodiment, described second plasma treatment P
2with the first plasma treatment P
1process conditions different, namely described first reacting gas is different with the kind of the second reacting gas; Or described first radio-frequency power is different with the second radio-frequency power; Or described first plasma treatment is different with the air pressure of the second plasma treatment.
The second radio-frequency power that described variable ratio frequency changer power source 204 exports is used for making the second reacting gas plasmarized.At described second plasma treatment P
2in process, forbid described impedance matching unit 206, make variable ratio frequency changer power source 204 export second frequency f by external control unit outside 207
2, described second frequency f
2be the aforementioned second frequency obtained by the second Pre-plasma process.
Described second plasma treatment P
2identical with the second reactive gas species of the second Pre-plasma process; Described second plasma treatment P
2identical with the air pressure of the second Pre-plasma process; Described second plasma treatment P
2identical with the second radio-frequency power of the second Pre-plasma process; Therefore, the present embodiment second plasma treatment P
2identical with the process conditions of the second Pre-plasma process, at the second plasma treatment P
2in process, when the output frequency of variable ratio frequency changer power source 204 is second frequency f
2time, reaction chamber 200 impedance and variable ratio frequency changer power source 204 matches impedances.
Further, the second plasma treatment P of the present embodiment
2in process, variable ratio frequency changer power source 204 remains stable output second frequency f
2, thus make to produce stable plasma in reaction chamber 200, avoid the output frequency of variable ratio frequency changer power source 204 to fluctuate excessive, thus avoid the poor stability of plasma or the problem of plasma extinguishment.Further, the present embodiment is from the first plasma treatment P
1be changed to the second plasma treatment P
2moment, make the output frequency of variable ratio frequency changer power source 204 by first frequency f by external control unit outside 207
1become stable second frequency f
2, prevent due to the first plasma treatment P
2with the second plasma treatment P
2the output frequency fluctuation of the variable ratio frequency changer power source 204 that process conditions difference is excessive and cause is excessive.
For this reason, the present embodiment is at the second plasma treatment P
2in process, variable ratio frequency changer power source 204 exports second frequency f stably
2, and at the first plasma treatment P
1to the second plasma treatment P
2transition stage, the output frequency of variable ratio frequency changer power source 204 is stably by first frequency f
1transit to second frequency f
1, prevent the output frequency of variable ratio frequency changer power source 204 to fluctuate excessive, thus make the plasma stability in reaction chamber 200 and maintain continuous running status.
In the present embodiment, comprise the first plasma treatment P circulating successively and carry out with described plasma treatment
1with the second plasma treatment P
2for example, until expose substrate 300 surface, in plasma treatment procedure, the plasma in reaction chamber 200 remains stable and continuously running duty, prevents the harmful effect that plasma extinguishment or instability are brought.
The method of above-mentioned plasma treatment can be applied in the technique forming silicon through hole, wherein, first plasma treatment is etching is main technique, second plasma treatment is be deposited as main technique, alternate cycles carries out the first plasma treatment and the second plasma treatment, until the degree of depth of the silicon through hole of etching formation reaches re-set target, the duration of the first plasma treatment is less than 1 second, the duration of the second plasma treatment is less than 1 second, wherein, the duration of the first plasma treatment and the second plasma treatment is shorter, the pattern of the silicon through hole that etching is formed is better.In a specific embodiment, the duration of described first plasma treatment is 0.1 second, 0.2 second or 0.5 second; The duration of described second plasma treatment is 0.1 second, 0.2 second or 0.5 second.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (13)
1. a method for plasma treatment, is characterized in that, comprising:
Pending substrate, plasma processing apparatus and external control unit outside are provided, described plasma processing apparatus has variable ratio frequency changer power source, described external control unit outside is connected with variable ratio frequency changer power source, and described pending substrate is placed in the reaction chamber of plasma processing apparatus;
Obtain first frequency in advance, described first frequency is in the first plasma treatment procedure, the output frequency of variable ratio frequency changer power source when variable ratio frequency changer power source and reaction chamber impedance matching;
Obtain second frequency in advance, described second frequency is in the second plasma treatment procedure, the output frequency of variable ratio frequency changer power source when variable ratio frequency changer power source and reaction chamber impedance matching;
First plasma treatment is carried out to described pending substrate, pass into the first reacting gas in reaction chamber, variable ratio frequency changer power source exports the first radio-frequency power to reaction chamber, make the output frequency of variable ratio frequency changer power source be first frequency by external control unit outside simultaneously, make variable ratio frequency changer power source and reaction chamber impedance matching;
After carrying out described first plasma treatment, second plasma treatment is carried out to described pending substrate, pass into the second reacting gas in reaction chamber, variable ratio frequency changer power source exports the second radio-frequency power to reaction chamber, make the output frequency of variable ratio frequency changer power source be second frequency by external control unit outside simultaneously, make variable ratio frequency changer power source and reaction chamber impedance matching.
2. the method for plasma treatment according to claim 1, is characterized in that, described plasma treatment comprises the first plasma treatment and the second plasma treatment that circulate successively and carry out.
3. the method for plasma treatment according to claim 1, is characterized in that, also comprises: provide impedance matching unit, and described impedance matching unit is connected between the variable ratio frequency changer power source of plasma processing apparatus and plasma generator.
4. the method for plasma treatment according to claim 3, is characterized in that, in described first plasma treatment procedure, forbids described impedance matching unit; In described second plasma treatment procedure, forbid described impedance matching unit.
5. the method for plasma treatment according to claim 3, it is characterized in that, the method obtaining described first frequency is: carry out the first Pre-plasma process to described pending substrate, pass into the first reacting gas in reaction chamber, variable ratio frequency changer power source exports the first radio-frequency power to reaction chamber, described impedance matching unit is automatic frequency adjustment pattern, automatically the output frequency being regulated variable ratio frequency changer power source by described impedance matching unit is first frequency, makes variable ratio frequency changer power source and reaction chamber impedance matching.
6. the method for plasma treatment according to claim 5, is characterized in that, described first plasma treatment is identical with the first reactive gas species of the first Pre-plasma process; Described first plasma treatment is identical with the air pressure of the first Pre-plasma process; Described first plasma treatment is identical with the first radio-frequency power of the first Pre-plasma process.
7. the method for plasma treatment according to claim 3, it is characterized in that, the method obtaining described second frequency is: carry out the second Pre-plasma process to described pending substrate, pass into the second reacting gas in reaction chamber, variable ratio frequency changer power source exports the second radio-frequency power to reaction chamber, described impedance matching unit is automatic frequency adjustment pattern, automatically the output frequency being regulated variable ratio frequency changer power source by described impedance matching unit is second frequency, makes variable ratio frequency changer power source and reaction chamber impedance matching.
8. the method for plasma treatment according to claim 7, is characterized in that, described second plasma treatment is identical with the second reactive gas species of the second Pre-plasma process; Described second plasma treatment is identical with the air pressure of the second Pre-plasma process; Described second plasma treatment is identical with the second radio-frequency power of the second Pre-plasma process.
9. the method for plasma treatment according to claim 1, is characterized in that, described first reacting gas is different with the kind of the second reacting gas.
10. the method for plasma treatment according to claim 1, is characterized in that, described first radio-frequency power is different with the second radio-frequency power.
The method of 11. plasma treatment according to claim 1, is characterized in that, described first plasma treatment is different with the air pressure of the second plasma treatment.
The method of 12. plasma treatment according to claim 1, is characterized in that, also comprise: for the bias power source of output offset power, and described bias power is suitable for the bias voltage regulating pending substrate.
The method of 13. plasma treatment according to claim 1, is characterized in that, the duration of described first plasma treatment is less than 1 second; The duration of described second plasma treatment is less than 1 second.
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