JP2005223079A - Surface wave excitation plasma cvd apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a surface wave excitation plasma CVD apparatus in which a depositing enabling region having proper film thickness and film quality can be formed to the perimeter of a substrate S to be treated. <P>SOLUTION: The plasma CVD apparatus 100 includes an annular waveguide 3 which has an inlet and a terminating part which introduce a microwave and which make the bottom plate 3d with a slot antenna group 30 formed therein as an inside face, a dielectric tube 4 in which an outside face is arranged in contact with the bottom plate 3d of the annular waveguide 3, the dielectric tube 4 held to form an airtight space, a surface wave excitation plasma P generated in the airtight space, and a chamber 2 for depositing to the front surface of the substrate S by this plasma P. The material gas containing a silicon element is emitted in the chamber 2 from the gas injection port 63 of a top view side introducing pipe 6 and the gas port 73 of a side face side introducing pipe 7. A process gas which makes the material gas cause a chemical reaction, is emitted in the chamber 2 from the gas injection port 53 which is provided separately with the gas injection ports 63, 73. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a CVD apparatus for forming a film using surface wave excitation plasma.

  In a semiconductor manufacturing process, a plasma CVD apparatus that performs film formation using plasma is used. As such a plasma CVD apparatus, conventionally, a parallel plate type plasma processing apparatus, an electron cyclotron resonance (ECR) plasma processing apparatus, and the like have been used. Furthermore, in recent years, a surface wave plasma (SWP) processing apparatus that can easily generate a high-density plasma with a larger area has come to be used. In the SWP plasma CVD apparatus, a material gas containing a constituent element of a thin film and a process gas that is a raw material of a reactive active species are introduced into a plasma generation chamber, and the material gas is decomposed or a chemical reaction is caused by surface wave excitation plasma. To deposit a thin film on the substrate.

  The surface wave-excited plasma is generated by introducing a microwave propagating through the microwave waveguide into the plasma generation chamber via a dielectric member. There are two types of microwave waveguides, a linear one and an annular one, which are used according to the shape of the object to be processed and the purpose of processing. As the annular waveguide, there is an endless annular waveguide in which a plurality of slot antennas are formed, and an SWP plasma processing apparatus including the endless annular waveguide is known (for example, Patent Document 1). reference).

Japanese Patent Laid-Open No. 5-345882 (2nd page, FIGS. 6 and 9)

  Since the endless annular waveguide of Patent Document 1 does not have a termination, microwave power may concentrate on a specific slot antenna. When this endless annular waveguide is used in a SWP plasma CVD apparatus, the plasma density is localized at a specific location on the dielectric member, the chemical reaction of the material gas is rapidly performed, and the film thickness and film quality are both appropriate. There is a problem that the filmable region is limited to a narrow range.

  (1) A surface wave excitation plasma CVD apparatus according to a first aspect of the present invention includes an inlet for introducing a microwave from a microwave generator and a terminal portion, and an annular surface having a bottom plate on which a plurality of slot antennas are formed as an inner surface The microwave waveguide is cylindrical, and the outer surface of the cylinder is disposed in contact with the bottom plate of the annular microwave waveguide, and the microwave propagating through the annular microwave waveguide is introduced through the slot antenna. A cylindrical dielectric member and an airtight space are formed by holding the cylindrical dielectric member, and surface wave excitation plasma is generated in the airtight space by microwaves introduced through the cylindrical dielectric member. A plasma processing chamber for processing an object to be processed by excitation plasma; a material gas introducing means for introducing a material gas containing silicon element into the plasma processing chamber; and surface wave excitation. Process gas introduction means that introduces a process gas that is activated by plasma and causes a chemical reaction to the material gas, and ejects the process gas into the plasma processing chamber from a gas outlet provided apart from the gas outlet of the material gas introduction means It is characterized by comprising. In this surface wave excitation plasma CVD apparatus, the gas outlet of the material gas introduction unit is preferably provided closer to the object to be processed than the gas outlet of the process gas introduction unit.

(2) The surface wave excitation plasma CVD apparatus according to claim 3 is the surface wave excitation plasma CVD apparatus according to claim 1 or 2, wherein the material gas introduction means is in the internal space surrounded by the cylindrical dielectric member or its peripheral region A gas jet outlet in the axial direction of the cylindrical dielectric member, the first material gas introduction means for jetting the gas in the axial direction, and the gas jet outlet in the peripheral region of the internal space surrounded by the cylindrical dielectric member. And it can comprise so that it may have at least one of the 2nd material gas introduction means which makes a predetermined angle with the axial direction of a cylindrical dielectric member, and ejects gas.
(3) The surface wave excitation plasma CVD apparatus according to claim 4 is the surface wave excitation plasma CVD apparatus according to any one of claims 1 to 3, wherein the material gas introduction means includes at least one path and at least one gas ejection port. It is preferable to have. Further, the material gas introduction means may change the distance of the gas outlet from the object to be processed. The second material gas introduction means may change the direction of the gas outlet, and the gas outlet is configured to eject gas in an angle range of ± 60 ° with respect to a plane orthogonal to the axial direction of the cylindrical dielectric member. May be provided.
(4) The surface wave excitation plasma CVD apparatus according to claim 8 is the surface wave excitation plasma CVD apparatus according to any one of claims 1 to 7, wherein at least one process gas introduction means is provided in the vicinity of the inner surface of the cylindrical dielectric member. It is possible to provide a gas flow path having the above-described path and one or more gas ejection ports.

  ADVANTAGE OF THE INVENTION According to this invention, the surface wave excitation plasma CVD apparatus which forms the film-forming possible area | region appropriate for both the film thickness and film quality around a to-be-processed object can be provided.

Hereinafter, a surface wave excitation plasma CVD apparatus (hereinafter simply referred to as a plasma CVD apparatus) according to the present invention will be described with reference to FIGS.
FIG. 1 is an overall configuration diagram schematically showing a plasma CVD apparatus according to an embodiment of the present invention. FIG. 2 is a schematic configuration diagram of a main part of the plasma CVD apparatus of FIG.

  Referring to FIGS. 1 and 2, the SWP processing apparatus 100 includes a microwave generator 1, a chamber 2, an annular waveguide 3, a dielectric tube 4, a process gas introduction tube 5, and an upper surface for material gas. A side introduction pipe 6, a side introduction pipe 7 for material gas, a vacuum exhaust pipe 8, and a substrate holder 9 are provided.

  The microwave generation unit 1 includes a microwave power source 11, a microwave oscillator 12, an isolator 13, a directional coupler 14, and a matching unit 15. The microwave generator 1 generates a 2.45 GHz microwave and sends it to the inlet 3 a of the annular waveguide 3. The microwave propagates from the inlet 3a of the annular waveguide 3 to the terminal end 3b. A termination matching unit 3c for adjusting the phase of the microwave by changing the termination position is provided at the termination portion 3b of the annular waveguide 3.

  As shown in FIG. 2, the chamber 2 holds a dielectric tube 4 on its side wall via an O-ring 2a and forms an airtight space therein. The chamber 2 includes a process gas introduction pipe 5 for introducing a process gas, an upper surface side introduction pipe 6 for introducing a material gas, a side surface introduction pipe 7 for introducing a material gas, a vacuum exhaust pipe 8 and a covered pipe. A substrate holder 9 for holding a substrate S to be processed is provided. The substrate holder 9 can move along the Z direction that is the axial direction of the dielectric tube 4 and rotate around the Z axis, and can be heated, cooled, and applied with an electric field as necessary.

  The annular waveguide 3 is made of, for example, aluminum alloy or nonmagnetic stainless steel, and a slot antenna group 30 including a plurality of slot antennas is formed on the bottom plate 3d of the annular waveguide 3. The inner surface of the bottom plate 3d is a surface called a magnetic field surface (H surface).

  The dielectric tube 4 is made of quartz, alumina, or the like, and the outer peripheral surface of the dielectric tube 4 is disposed in contact with the bottom plate 3 d of the annular waveguide 3. The upper end surface of the dielectric tube 4 is in contact with the upper plate 2b through the O-ring 2a, and the lower end surface is in contact with the side wall of the chamber 2 through the O-ring 2a.

The process gas introduction pipe 5 is provided on the upper plate 2 b of the chamber 2. The process gas introduction pipe 5 includes an introduction pipe 51 for introducing process gas from the outside, a flow path 52 formed inside the upper plate 2b, and a plurality of gas jet ports 53 provided on the lower surface side of the upper plate 2b. It is piping which has. The position A of the gas outlet 53 is separated from the reference substrate position O by a distance h1. The process gas introduced into the chamber 2 is a gas that is a raw material of reactive active species such as N ₂ gas, O ₂ gas, H ₂ gas, NO ₂ gas, NO gas, NH ₃ gas, Ar gas, and He gas. , Ne gas, Kr gas, Xe gas and the like.

  The upper surface side introduction pipe 6 is provided in the vertical pipe 61 for introducing the material gas from the outside, the branch pipe 62 branched from the vertical pipe 61 and extending on a plane perpendicular to the paper surface in the drawing, and the branch pipe 62. A pipe having a plurality of gas jets 63. The position B of the gas outlet 63 is separated from the substrate position O by a distance h2 (<h1). The distance h2 is variable by moving the vertical pipe 61 straight along the Z direction (up and down direction).

  The side-side introduction pipe 7 is provided in each of the vertical pipes 72, a horizontal pipe 71 that introduces a material gas from the outside, a plurality of vertical pipes 72 that are branched from the horizontal pipe 71 and surround the substrate S, and the like. A pipe having a gas outlet 73. The position C of the gas outlet 73 is separated from the substrate position O by a distance h3 (<h1). The distance h3 is variable by moving the vertical pipe 72 straight along the Z direction.

The material gas introduced into the chamber 2 from the upper surface side introduction pipe 6 or the side surface side introduction pipe 7 is a gas containing Si element which is a component of a silicon thin film or a silicon compound thin film such as SiH ₄ gas and Si ₂ H ₆ gas. . A mixed gas obtained by mixing the above-described process gas or other gas with these material gases can also be used as the material gas. The structure of the above three gas introduction pipes 5, 6, and 7 will be described in detail later.

  A vacuum exhaust pipe 8 connected to a vacuum exhaust pump (not shown) is provided on the bottom surface of the chamber 2. The inside of the chamber 2 is maintained at a predetermined degree of vacuum (gas partial pressure) by performing evacuation while introducing a predetermined gas into the chamber 2 at a predetermined flow rate through the three gas introduction pipes 5, 6, 7. Can do.

  FIG. 3A is a cross-sectional view taken along the line II in FIG. The bottom plate 3d of the annular waveguide 3 is disposed in contact with the outer peripheral surface of the dielectric tube 4, and slot antennas 31 to 38 (slot antenna group 30) are provided on the bottom plate 3d. FIG. 3B is a development view of the annular waveguide 3, and as illustrated, the slot antennas 31 to 38 are along the center line CL of the propagation path of the microwave M in the annular waveguide 3. The long rectangular openings are formed at predetermined intervals. The microwave M enters the annular waveguide 3 from the introduction port 3a, propagates toward the terminal end 3b to the terminal E1, and part of the microwave M is reflected by the terminal E1.

  FIG. 4 is a plan view schematically showing the structure of the process gas introduction pipe 5. The process gas introduction pipe 5 is shown together with the dielectric tube 4. In the drawing, the introduction pipe 51 extends perpendicular to the paper surface and communicates with the flow path 52. In the flow path 52, a plurality of gas ejection ports 53 are provided at equal intervals from the inner peripheral surface of the dielectric tube 4 at a predetermined interval. The gas outlet 53 is a small hole having a diameter of 1 mm or less. The process gas introduced from the introduction pipe 51 branches into two at the connection portion between the introduction pipe 51 and the flow path 52 and is discharged into the chamber 2 from the plurality of gas ejection ports 53. As described above, the process gas introduction pipe 5 has a plurality of paths and a plurality of gas jets, but the number of paths and gas jets may be one. In general, the more paths and gas outlets, the more uniform the process gas concentration distribution and the plasma density in the chamber. On the other hand, if the number of paths and gas outlets are reduced, the structure of the process gas introduction pipe 5 becomes simple.

  FIG. 5 is a plan view schematically showing the structure of the upper surface side introduction pipe 6. In the drawing, the vertical tube 61 extends perpendicularly to the paper surface and communicates with a central disk 62a having a hollow inside. The central disk 62a communicates with the straight tube 62b, and the straight tube 62b communicates with the annular tube 62c. A large number of gas jets 63 are perforated in the central disk 62a and the annular tube 62c. The gas outlet 63 is a small hole having a diameter of 1 mm or less. The central disk 62a, the straight pipe 62b, and the annular pipe 62c constitute a branch pipe 62. The material gas introduced from the vertical pipe 61 is discharged into the chamber 2 from the gas outlet 63 of the central disk 62a, or is released into the chamber 2 from the gas outlet 63 of the annular pipe 62c via the straight pipe 62b. The The discharge direction (ejection direction) is parallel to the axial direction of the dielectric tube 4. Although the upper surface side introduction pipe 6 has a plurality of paths and a plurality of gas ejection ports, the number of paths and gas ejection ports may be one. In general, as the number of paths and gas outlets increases, the material gas concentration distribution in the chamber can be made uniform. On the other hand, if the number of paths and gas outlets is reduced, the structure of the upper surface side introduction pipe 6 becomes simple.

  FIG. 6A is a perspective view schematically showing the structure of the side-side introduction tube 7. FIG. 6B is a partial cross-sectional view schematically showing a partial structure of the side surface side introduction tube 7. The horizontal tube 71 communicates with the annular tube 72a, and a plurality of vertical tubes 72b are provided at substantially equal intervals in the annular tube 72a. The vertical tube 72 b is a tube that extends parallel to the axial direction of the dielectric tube 4. As shown in FIG. 6B, the vertical tube 72b has a double structure including an outer tube 72c and an inner tube 72d. Each inner pipe 72d has a gas jet 73 formed therein. The inner tube 72d can rotate around the major axis with respect to the outer tube 72c, and can expand and contract along the major axis. Thereby, each vertical pipe | tube 72b can change the ejection direction (direction) of material gas, and the ejection position (distance from the board | substrate S) each independently freely. The gas ejection port 73 is a small hole having a diameter of 1 mm or less. The annular pipe 72a and the vertical pipe 72b constitute a branch pipe 72. The material gas introduced from the horizontal pipe 71 is discharged into the chamber 2 from the gas outlet 73 of the vertical pipe 72b through the annular pipe 72a and the plurality of vertical pipes 72b. The gas jet 73 is formed so that the discharge direction (spout direction) is optimal within an angle range of ± 60 ° with respect to the plane orthogonal to the axial direction of the dielectric tube 4. In addition, the gas ejection port 73 can be formed so that the ejection direction is variable within an angle range of ± 60 °. Although the side surface side introduction pipe 7 has a plurality of paths and a plurality of gas ejection ports, the number of paths and gas ejection ports may be one. In general, as the number of paths and gas outlets increases, the material gas concentration distribution in the chamber can be made uniform. On the other hand, if the number of passages and gas outlets is reduced, the structure of the side surface side introduction pipe 7 becomes simple.

  The operation and effect of the plasma CVD apparatus 100 configured as described above will be described with reference to FIG. 2 again. The process gas and material gas in the chamber 2 are introduced at a predetermined flow rate and maintained at a predetermined pressure. Microwaves from the microwave generator 1 shown in FIG. 1 are radiated to the dielectric tube 4 through the slot antennas of the slot antenna group 30 and are introduced into the chamber 2 through the dielectric tube 4. The microwave becomes a surface wave SW, and this surface wave energy ionizes and dissociates the process gas in the chamber 2 to generate plasma. Since the surface wave SW propagates along the inner surface of the dielectric tube 4 and spreads over the entire inner surface of the dielectric tube 4, the high-density plasma P is uniform in the inner space surrounded by the dielectric tube 4 and its peripheral region. To generate. The substrate S is held in the plasma P by the substrate holder 9, the material gas is decomposed or a chemical reaction is caused by the plasma P, and a thin film is deposited on the surface of the substrate S.

  In the present embodiment, the distance between the gas outlet 53 of the process gas inlet pipe 5 and the gas outlet 63 of the upper surface side inlet pipe 6, or the gas of the gas outlet 53 of the process gas inlet pipe 5 and the side side inlet pipe 7. A distance from the jet port 73 is provided. The gas outlet 53 of the process gas introduction pipe 5 is disposed in the vicinity of the inner peripheral surface of the dielectric tube 4 in order to generate high-density plasma. On the other hand, the gas outlet 63 of the upper surface side introduction tube 6 and the gas outlet 73 of the side surface side introduction tube 7 are provided on the inner peripheral surface of the dielectric tube 4 in order to avoid a sudden reaction due to the high density plasma of the material gas. Therefore, it is provided at a position away from the gas outlet 53. Since the positions of the gas outlets 63 and 73 are determined so that a sudden reaction does not occur in this way, the reaction can be easily controlled, and an appropriate filmable region with a good film thickness and film quality is formed around the substrate S. Can be formed. In addition, since the gas outlets 63 and 73 are set at a distance from the substrate position O in consideration of the mixed state of the material gas molecules and radicals in the plasma, the drift distance of the generated precursor, and the like. A more appropriate filmable region can be formed in the periphery depending on the film thickness and film quality. Further, a plurality of gas jets 63 and 73 are provided, but the gas jets are arranged so that the time required for the precursor to reach the substrate S is equal, or a predetermined jet direction is taken. By adjusting the direction, uniformity of film thickness and film quality can be ensured. Note that the plasma CVD apparatus 100 may be provided with both the upper surface side introduction tube 6 and the side surface side introduction tube 7 or one of them.

  This will be described with reference to FIG. FIG. 7 is a schematic diagram showing an elementary process of a chemical reaction occurring in the plasma P region. In FIG. 7, only the upper surface side introduction pipe 6 is provided for introducing the material gas. The axial direction (Z direction) of the dielectric tube 4, the substrate position O, the process gas introduction position A, and the material gas introduction position B by the upper surface side introduction pipe 6 are the same as in FIG.

  In the internal space surrounded by the dielectric tube 4, especially near the inner peripheral surface of the dielectric tube 4, a large number of ions, electrons, and radicals are generated due to the high plasma density. The ions and electrons are subjected to the action of the surface wave SW propagating along the inner peripheral surface of the dielectric tube 4 and have kinetic energy in a direction parallel to the surface to be processed (surface) of the substrate S. Accordingly, since the incidence frequency of charged particles having high kinetic energy is low on the surface of the substrate S, it is possible to form a high quality film with very little plasma damage. Radicals having no charge diffuse in the direction of the substrate S (Z direction) and collide with material gas molecules, causing various gas phase reactions such as decomposition, excitation, recombination, etc., and the generated molecules become thin films. And deposited on the surface of the substrate S.

At this time, by changing the distance h2 from the substrate S, the film quality (crystallinity, refractive index, internal stress, etc.) of the thin film deposited on the surface of the substrate S can be controlled. Examples of silicon compounds include oxides, nitrides, and carbides. For example, when forming a SiO ₂ film, O ₂ gas is used as a process gas and SiH ₄ gas is used as a material gas. The formation process of the SiO ₂ film is a series of chemical reactions in which SiH ₄ molecules react with oxygen radicals to generate SiO ₂ via intermediate products Si—H, Si—OH and precursor SiO. Since this series of reaction times is equivalent to the drift distance of the reactive species in terms of space, the distance h2 between the substrate S and the gas ejection port 63 is an important factor that determines the film quality.

If the distance h2 is too short, a low-quality thin film in which intermediate products are mixed in the SiO ₂ film is obtained. If the distance h2 is too long, a chemical reaction is promoted near the dielectric tube 4 away from the substrate S, and SiO 2 A low-quality thin film in which particles generated by polymerization of _two molecules are mixed in the thin film is obtained.

FIG. 8 is a graph qualitatively showing the density of various particles and molecules in the plasma P region of the plasma CVD apparatus according to this embodiment. In this graph, the vertical axis represents the existence density, and the horizontal axis represents the drift distance, the material gas (SiH ₄ gas) introduction position B, and the substrate position O. In the figure, the three curves represent the density distribution of various molecules when SiH ₄ gas is introduced from the gas introduction position B into the chamber.

When SiH ₄ gas is introduced from the gas introduction position B, it rapidly changes into a precursor. This is due to a reaction in which oxygen radicals decompose SiH ₄ molecules in a short time by a chain reaction to produce a precursor. The precursor reaches a maximum at the gas introduction position B slightly on the substrate side, that is, immediately after the introduction of the SiH ₄ gas, and then changes to the SiO ₂ molecule along with the drift distance and becomes stable. The time for the precursor to change to SiO ₂ is converted into a drift distance, and the film quality can be controlled by optimizing the distance between the gas introduction position B and the substrate position O.

  Further, in the present embodiment, the position of the gas outlet 73 of the side-side inlet pipe 7 is also variable, like the gas outlet 63 of the upper-side inlet pipe 6. When both the upper surface side introduction pipe 6 and the side surface side introduction pipe 7 are used, at least one of the positions of the gas ejection ports 63 and 73 may be variable. Thereby, the film thickness and the film quality can be made uniform over the entire surface of the substrate S, and the film quality can be controlled. Furthermore, since the direction of the gas outlet 73 of the side-side introduction pipe 7 is variable, the gas concentration distribution in the chamber 2 can be finely controlled, and the film quality can be controlled more precisely over the entire surface of the substrate S. .

  The present invention is not limited to the embodiments described above as long as the characteristics are not impaired. For example, various modifications are conceivable, such as the dielectric tube 4 having a divided structure, the shape of the process gas introduction pipe 5, the upper surface side introduction pipe 6 and the side surface introduction pipe 7, and the number and arrangement of the gas outlets are changed.

1 is an overall configuration diagram schematically showing a plasma CVD apparatus according to an embodiment of the present invention. It is a schematic block diagram of the principal part of the plasma CVD apparatus which concerns on embodiment of this invention. (A) is II sectional drawing of FIG. 2, is a top view which shows the structure of the introduction part of a microwave, (b) is an expanded view of an annular waveguide. It is a top view which shows typically the structure of the process gas introduction pipe | tube of the plasma CVD apparatus which concerns on embodiment of this invention. It is a top view which shows typically the structure of the upper surface side introduction tube of the plasma CVD apparatus which concerns on embodiment of this invention. (A) is a perspective view which shows typically the structure of the side surface side introduction tube of the plasma CVD apparatus which concerns on embodiment of this invention, (b) shows the partial structure of a side surface side introduction tube typically. It is a fragmentary sectional view. It is a schematic diagram which shows the elementary process of the chemical reaction which arises in the plasma production area | region in the plasma CVD apparatus which concerns on embodiment of this invention. It is a graph which shows qualitatively the density distribution of various molecules in a plasma region.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1: Microwave generation part 2: Chamber 3: Annular waveguide 3a: Introduction port 3b: Termination part 3c: Termination matching unit 4: Dielectric tube 5: Process gas introduction pipe 6: Upper surface side introduction pipe 7: Side surface side introduction Tube 30: Slot antenna group 31-38: Slot antenna 100: Plasma CVD apparatus A: Start point B: End point E1: End point M: Microwave P: Plasma SW: Surface wave

Claims (8)

An annular microwave waveguide having an inlet and a termination for introducing microwaves from a microwave generator, and having a bottom plate on which a plurality of slot antennas are formed as an inner surface;
Cylindrical dielectric body that has a cylindrical shape, the outer side surface of which is in contact with the bottom plate of the annular microwave waveguide, and that introduces microwaves propagating through the annular microwave waveguide through the slot antenna Members,
An airtight space is formed by holding the cylindrical dielectric member, surface wave excited plasma is generated in the airtight space by microwaves introduced through the cylindrical dielectric member, and the surface wave excited plasma is used to generate the surface wave excited plasma. A plasma processing chamber for processing an object to be processed;
A material gas introduction means for introducing a material gas containing silicon element and ejecting the material gas from a gas ejection port into the plasma processing chamber;
A process gas that is activated by the surface wave excitation plasma to cause a chemical reaction in the material gas is introduced, and the process is introduced into the plasma processing chamber from a gas jet port provided apart from the gas jet port of the material gas introduction unit. A surface wave excitation plasma CVD apparatus comprising a process gas introduction means for ejecting a gas. In the surface wave excitation plasma CVD apparatus according to claim 1,
The surface wave excitation plasma CVD apparatus characterized in that a gas jet port of the material gas introducing unit is provided closer to the object to be processed than a gas jet port of the process gas introducing unit. In the surface wave excitation plasma CVD apparatus according to claim 1 or 2,
The material gas introduction means includes
A first material gas introduction means which has the gas ejection port in an inner space surrounded by the cylindrical dielectric member or in a peripheral region thereof, and ejects gas in the axial direction of the cylindrical dielectric member;
Second material gas introduction means which has the gas ejection port in the peripheral region of the internal space surrounded by the cylindrical dielectric member and ejects gas at a predetermined angle with the axial direction of the cylindrical dielectric member The surface wave excitation plasma CVD apparatus characterized by having at least one of these. In the surface wave excitation plasma CVD apparatus in any one of Claims 1-3,
The surface gas excitation plasma CVD apparatus characterized in that the material gas introduction means has one or more paths and one or more gas ejection ports. In the surface wave excitation plasma CVD apparatus in any one of Claims 1-4,
The surface-wave-excited plasma CVD apparatus, wherein the material gas introduction unit further includes a distance variable unit that varies a distance between the gas ejection port and the object to be processed. In the surface wave excitation plasma CVD apparatus according to claim 3,
The surface wave excitation plasma CVD apparatus, wherein the second material gas introduction means further includes a direction changing means for changing a direction of the gas ejection port. In the surface wave excitation plasma CVD apparatus according to claim 3,
The second material gas introduction means is characterized in that the gas ejection port is provided so as to eject gas in an angle range of ± 60 ° with respect to a plane orthogonal to the axial direction of the cylindrical dielectric member. Surface wave excitation plasma CVD equipment. In the surface wave excitation plasma CVD apparatus in any one of Claims 1-7,
The surface gas excitation plasma CVD apparatus characterized in that the process gas introduction means is provided with a gas flow path having one or more paths and one or more gas jets in the vicinity of the inner surface of the cylindrical dielectric member. .

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