JP4506557B2 - Shower head and surface wave excitation plasma processing apparatus - Google Patents

Description

  The present invention relates to a shower head for supplying various gases to a surface wave excited plasma processing chamber and a surface wave excited plasma processing apparatus using the shower head.

  In a plasma processing apparatus using surface wave excitation plasma, a microwave propagating in a waveguide is introduced into a chamber through a dielectric window, and the catalyst gas in the chamber is excited by the surface wave generated on the surface of the dielectric window. Generate surface wave excitation plasma. A reactive main gas for processing an object to be processed is introduced into the chamber from one gas inlet provided on the side surface of the chamber (see, for example, Patent Document 1).

JP 2000-348898 (page 4, FIG. 1)

  In the apparatus disclosed in Patent Document 1, since gas is ejected from one gas inlet on the side of the chamber, there is a problem that the supply of gas to the object to be processed in the chamber becomes uneven.

(1) The invention of claim 1 is applied to a shower head having an ejection pipe for ejecting a processing gas into a chamber of a surface wave excitation plasma processing apparatus, and the ejection pipe extends in the direction of its longitudinal axis. A plurality of stages of hollow chambers divided by one or a plurality of partition walls and extending in the direction of the longitudinal axis are provided, and the processing gas introduced from the first-stage hollow chambers flows into the partition walls of the next stage. A plurality of communication holes are provided at predetermined intervals in the direction of the longitudinal axis, and a plurality of gas ejection holes for injecting the processing gas into the chamber are provided at predetermined intervals in the direction of the longitudinal axis in the final-stage hollow chamber. The gas ejection hole is provided so that the processing gas is ejected in one direction orthogonal to the longitudinal axis, and the ejection pipe is further provided in the chamber so as to be rotatable around the longitudinal axis in order to change the direction of the gas ejection hole. A mounting part is provided. To.
(2) The invention of claim 2 is applied to a shower head having an ejection pipe for ejecting a processing gas into a chamber of a surface wave excitation plasma processing apparatus, and the ejection pipe extends in the direction of its longitudinal axis. A plurality of stages of hollow chambers divided by one or a plurality of partition walls and extending in the direction of the longitudinal axis are provided, and the processing gas introduced from the first-stage hollow chambers flows into the partition walls of the next stage. A plurality of communication holes are provided at predetermined intervals in the direction of the longitudinal axis, and a plurality of gas ejection holes for injecting the processing gas into the chamber are provided at predetermined intervals in the direction of the longitudinal axis in the final-stage hollow chamber. The final-stage hollow chambers are provided on both sides of the first-stage hollow chamber so as to extend in the direction of the longitudinal axis, and the gas ejection holes of the final-stage hollow chamber are orthogonal to the longitudinal axis direction. Set so that the processing gas is ejected in each direction. And characterized in that it is.
(3) The shower head according to claim 3 is the shower head according to claim 1, wherein the communication hole and the gas ejection hole as the gas inflow hole provided facing the final-stage hollow chamber or the intermediate-stage hollow chamber The communication hole as the gas inflow hole and the communication hole as the gas outflow hole provided so as to face each other are arranged so as not to face each other.
(4) The shower head according to claim 4 is the shower head according to claim 2, wherein a small hole is formed at a position facing the gas ejection hole so as to cover the outer surface where the gas ejection hole of the final hollow chamber is formed. The adhesion prevention board which has is arrange | positioned.
(5) The shower head according to claim 5 is characterized in that, in the shower head according to claim 4, the diameter of the small hole is the same as or smaller than the thickness and dimension of the deposition preventing plate.
(6) A surface wave excitation plasma processing apparatus according to the invention of claim 6 generates surface wave excitation plasma in an upper space in the chamber, and the shower head according to any one of claims 1 to 5 is horizontally arranged. The plasma processing is performed by introducing the processing gas into the lower space in the chamber so as to extend, and dissociating and reacting the processing gas.
(7) According to a seventh aspect of the present invention, in the surface wave excitation plasma processing apparatus according to the sixth aspect, the shower head according to any one of the second, fourth , and fifth aspects is provided at the center of the chamber. Among these, the 1st shower head comprised so that the process gas may be spouted in the direction which mutually turned outward is arrange | positioned, and either side of a 1st shower head is any one of Claim 1 and 3 Among the shower heads described in 1), the second shower head configured to eject the processing gas in one direction is disposed.

  According to the present invention, since the processing gas introduced into the first-stage hollow chamber is guided to the next-stage hollow chamber through the communication hole and then ejected from the gas ejection hole into the chamber, The gas pressure becomes uniform in the room, and the processing gas can be supplied uniformly to the object to be processed in the chamber.

Hereinafter, a surface wave plasma (SWP) processing apparatus (hereinafter abbreviated as SWP processing apparatus) using a shower head according to an embodiment of the present invention will be described with reference to FIGS.
FIG. 1 is a longitudinal sectional view (XZ plane cut) schematically showing a configuration of a SWP processing apparatus according to an embodiment of the present invention. FIG. 2 is a longitudinal sectional view (YZ plane cut) schematically showing the configuration of the SWP processing apparatus according to the embodiment of the present invention.

  Referring to FIGS. 1 and 2, the SWP processing apparatus 100 includes a chamber 1, a microwave waveguide 2, a dielectric plate 3, and a plurality of process gas introduction units that introduce a process gas that generates surface wave excitation plasma. 4 and a plurality of shower heads 10A, 10B, and 20 for introducing a material gas (also referred to as a processing gas in this specification) that is decomposed by surface wave excitation plasma. The chamber 1 is a sealed container having a chamber body 1a and a lid 1b, and performs plasma processing such as etching and film formation on the substrate S to be processed using plasma generated in the internal space thereof. The chamber body 1a is provided with a substrate holder 5 that holds the substrate S to be processed and a vacuum exhaust port 6 that is connected to a vacuum pump (not shown) and exhausts the inside of the chamber 1. The substrate holder 5 can move and rotate in the Z direction, and has a heater 5a incorporated therein. A circular opening is provided on the side surface (YZ plane) of the chamber body 1a corresponding to the shower heads 10A, 10B, and 20. As will be described later, the shower heads 10A, 10B, and 20 are rotatably supported by the opening via an O-ring 1e.

  The microwave waveguide 2 is made of an aluminum alloy, a copper alloy, or the like, has a straight tubular shape extending in the Y direction, and is attached to the lid 1 b of the chamber 1. A plurality of slot antennas 2b are arranged on the bottom plate 2a of the microwave waveguide 2 at predetermined intervals along the axial direction of the tube. The slot antenna 2b is, for example, a long rectangular opening formed through the bottom plate 2a. The inner surface of the bottom plate 2a is called a magnetic field surface (H surface).

  The dielectric plate 3 is obtained by processing a dielectric material such as quartz, alumina, zirconia or the like into a flat plate shape, and has a through hole 3a for introducing a process gas in the plate thickness direction. The dielectric plate 3 is a flat plate extending along the XY plane. The top surface of the dielectric plate 3 is disposed in contact with the bottom plate 2a of the microwave waveguide 2 and is attached to the lid 1b via an O-ring 1c. Therefore, the airtightness in the chamber 1 can be maintained.

The process gas introduction unit 4 is fixed to the lid 1b of the chamber 1, and guides a process gas from a gas supply system (not shown) to the through hole 1d of the lid 1b. The process gas is introduced into the chamber 1 through the through hole 3 a of the dielectric plate 3. The process gas is a reactive gas such as N ₂ gas, O ₂ gas, or H ₂ gas, and a rare gas such as Ar gas, He gas, Ne gas, Kr gas, or Xe gas.

  The shower heads 10A and 10B are of the same type, both of which have a straight tube shape extending in the X direction in FIGS. 1 and 2, and are disposed in parallel between the dielectric plate 3 and the substrate S to be processed. . The shower head 20 also has a straight tube shape extending in the X direction in FIG. 2, and is arranged in the middle of the two shower heads 10A and 10B in parallel with the shower heads 10A and 10B. In addition, the arrow of shower head 10A, 10B, 20 represents the jetting direction of the gas mentioned later.

  The shower heads 10A and 10B will be described in detail with reference to FIG. 3 is a diagram schematically showing the shower heads 10A and 10B. FIG. 3A is a cross-sectional view taken along the line III-III of FIG. 2, that is, the shower heads 10A and 10B are cut along the longitudinal direction thereof. FIG. 3B is a longitudinal sectional view taken along the line II of FIG. 3A.

  The shower heads 10 </ b> A and 10 </ b> B are each provided with an attachment portion 101 having a cylindrical cross section, a rectangular cylindrical gas ejection portion 102, and a deposition preventing plate 103. The shower heads 10A and 10B are attached to the chamber main body 1a with the attachment portion 101 interposed through the O-ring 1e, and have a structure that can rotate around the axis as shown in FIG. Since the outer peripheral portion of the attachment portion 101 is in close contact with the O-ring 1e, the airtightness in the chamber 1 can be maintained even if the shower heads 10A and 10B are rotated.

  The gas ejection section 102 is provided with a first chamber 11 and a second chamber 12 that form a two-stage hollow structure in the upper and lower stages, and a material gas from a gas supply system (not shown) is supplied to the mounting section 101 in the first chamber 11. A gas introduction port 14 leading to is provided. Here, the first chamber 11 is the first-stage hollow chamber, and the second chamber 12 is the last-stage hollow chamber. A partition wall that partitions the upper first chamber 11 and the lower second chamber 12, that is, a dispersion plate 11a that is a bottom plate of the first chamber 11, is provided with a plurality of gas ejection holes 11b having substantially the same opening diameter. . These gas ejection holes 11b are communication holes that allow the first chamber 11 and the second chamber 12 to communicate with each other. The bottom plate of the lower second chamber 12 is a dispersion plate 12a, and a plurality of gas ejection holes 12b having substantially the same opening diameter are formed in the dispersion plate 12a.

  As shown in FIG. 3A, the gas ejection holes 11b and 12b are both regularly arranged. However, the gas ejection holes 11b and 12b are arranged so as not to line up in a line in the vertical direction of FIG. 3A, that is, so that the gas ejection holes 11b and 12b do not face each other. Further, the gas ejection holes 11 b and 12 b are formed as holes having a cross-sectional area far smaller than the opening of the gas introduction port 14.

On the surface of the dispersion plate 12a, an adhesion preventing plate 103 having small holes 103a formed in accordance with the arrangement and opening diameter of the gas ejection holes 12b of the dispersion plate 12a is provided. That is, the deposition preventing plate 103 is disposed so as to cover the region excluding the gas ejection holes 12b of the dispersion plate 12a.
The inner diameter of the small hole 103a is set to be equal to or less than the thickness of the deposition preventing plate 103, and the opening 103b of the small hole 103a is chamfered as shown in FIG.

  The shower head 20 will be described in detail with reference to FIG. 4 is a diagram schematically showing the shower head 20, and FIG. 4A is a cross-sectional view taken along the line IV-IV in FIG. 2, that is, a vertical cross-sectional view of the shower head 20 cut along its longitudinal direction. FIG. 4B is a cross-sectional view taken along line II-II in FIG.

  The shower head 20 includes a mounting section 201 having a cylindrical cross section, a rectangular cylindrical gas ejection section 202, and a deposition preventing plate 203. That is, the shower head 20 is also rotatably attached to the chamber body 1a with the attachment portion 201 interposed via the O-ring, like the shower heads 10A and 10B.

  The gas ejection part 202 is provided with a total of three chambers: a central first chamber 21 and second chambers 22 provided on both sides of the first chamber 21. The attachment portion 201 is provided with a gas introduction port 24 that guides a material gas from a gas supply system (not shown) to the first chamber 21. Here, the first chamber 21 is a first-stage hollow chamber, and the second chamber 22 is a final-stage hollow chamber. A partition partitioning the central first chamber 21 and the second chambers 22 on both sides thereof, that is, the dispersion plate 21a, which is the bottom plate of the first chamber 21, is provided with a plurality of gas ejection holes 21b having substantially the same opening diameter. Yes. These gas ejection holes 21b are communication holes that allow the first chamber 11 and the second chamber 22 to communicate with each other. The bottom plate of the second chamber 22 is a dispersion plate 22a, and a plurality of gas ejection holes 22b having substantially the same opening diameter are formed in the dispersion plate 22a.

  As shown in FIG. 4A, the gas ejection holes 21b and 22b are both regularly arranged. However, the gas ejection holes 21b and 22b are arranged so as not to line up in a line in the vertical direction of FIG. 4A, that is, so that the gas ejection holes 21b and 22b do not face each other. Further, the gas ejection holes 21 b and 22 b are formed as holes having a cross-sectional area far smaller than the opening of the gas introduction port 24.

  On the surface of the dispersion plate 22a, an adhesion preventing plate 203 having small holes 203a formed in accordance with the arrangement and opening diameter of the gas ejection holes 22b of the dispersion plate 22a is provided. That is, the deposition preventing plate 203 is disposed so as to cover the region excluding the gas ejection holes 22b of the dispersion plate 22a. The inner diameter of the small hole 203a is set to be equal to or less than the thickness of the deposition preventing plate 203, and as shown in FIG. 4B, the opening 203b of the small hole 203a is chamfered. As can be seen from the above description, the shower head 20 has a symmetrical structure in FIG.

  FIG. 5 is a plan view showing a schematic configuration of the SWP processing apparatus according to the embodiment, and shows a supply path of the material gas to the plurality of shower heads 10A, 10B, 20. The shower heads 10 </ b> A, 10 </ b> B, and 20 are supplied with a gas G <b> 1 by the gas supply system 7 and a gas G <b> 2 different from the gas G <b> 1 by the gas supply system 8. In the gas supply system 7, a pipe 7 a connected to a gas supply source (not shown) is branched into three, and mass flow controllers 7 b, 7 c, and 7 d are disposed in each of the three pipes. Similarly, in the gas supply system 8, mass flow controllers 8b, 8c, and 8d are disposed in each of the three branch pipes.

Since the outlet sides of the mass flow controllers 7b, 7c and 7d are connected to the outlet sides of the mass flow controllers 8b, 8c and 8d, the gases G1 and G2 are mixed and supplied to the shower heads 10A, 10B and 20 as material gases. Is done. That is, the material gas from the mass flow controllers 7b and 8b is supplied to the shower head 10A, the material gas from the mass flow controllers 7d and 8d is supplied to the shower head 10B, and the material gas from the mass flow controllers 7c and 8c is supplied to the shower head 20. Gas is supplied. The material gas is a gas containing components of a silicon thin film or a silicon compound thin film such as SiH ₄ gas, Si ₂ H ₆ gas, NH ₃ gas, or the like.

  The plasma processing by the SWP processing apparatus 100 configured as described above will be described with reference to FIGS. 1 to 4 again. While the process gas is introduced through the vacuum exhaust port 6 while the process gas is introduced into the chamber 1 by the process gas introduction unit 4 and the material gas is introduced into the chamber 1 by the shower heads 10A, 10B and 20, the chamber 1 is brought to a predetermined pressure. Retained.

  As shown in FIGS. 2 and 3, the material gas is guided from the gas introduction port 14 of the shower heads 10A and 10B to the first chamber 11, and is transferred to the second chamber 12 through the plurality of gas ejection holes 11b. The gas is discharged to the outside of the shower heads 10A and 10B, that is, into the chamber 1 through the plurality of gas ejection holes 12b and the small holes 103a. Since the opening cross-sectional area of the gas ejection holes 11b is very small, the material gas introduced into the first chamber 11 is uniformly ejected from the plurality of gas ejection holes 12b by the multistage arrangement of the gas ejection holes 11b and 12b. That is, the material gas is uniformly supplied from the shower heads 10A and 10B toward the substrate S to be processed.

As shown in FIGS. 2 and 4, the material gas is also led from the gas introduction port 24 of the shower head 20 to the first chamber 21. The material gas guided also to the first chamber 21 is transferred to the second chamber 22 through the plurality of gas ejection holes 21b, and from the both sides of the shower head 20 through the plurality of gas ejection holes 22b and the small holes 203a. That is, it is discharged into the chamber 1 in the horizontal direction. Since the opening cross-sectional area of the gas ejection hole 21b is very small, the material gas introduced into the first chamber 21 is
Due to the multistage arrangement of the gas ejection holes 21b and 22b, the gas ejection holes are uniformly ejected from the plurality of gas ejection holes 22b. That is, the material gas is uniformly supplied from the shower head 20 to the substrate S to be processed.

  A microwave is introduced from a microwave generator (not shown) into the microwave waveguide 2, radiated to the dielectric plate 3 through the slot antenna 2 b, and introduced into the chamber 1 through the dielectric plate 3. The process gas in the chamber 1 is ionized and dissociated by the microwave energy to generate plasma. When the electron density of the plasma becomes equal to or higher than the cut-off, the microwave becomes a surface wave and propagates along the boundary surface between the plasma and the dielectric plate 3 and spreads over the entire area of the dielectric plate 3. As a result, high-density plasma, that is, surface wave excitation plasma is generated in a region corresponding to the area of the dielectric plate 3. The material gas is decomposed and caused to react by the surface wave excitation plasma, and plasma processing such as CVD film formation, etching, and ashing is performed on the substrate S to be processed disposed in the vicinity of the plasma.

A process for forming a CVD film on the substrate S to be processed using surface wave excitation plasma will be described with reference to FIG.
FIG. 6 is a schematic diagram showing a reaction process inside the chamber in the SWP processing apparatus according to the embodiment. In FIG. 6, only the shower head 10A is shown, but actually, a plurality of shower heads 10A, 10B, and 20 are arranged as shown in FIG. 2 or FIG. FIG. 6 illustrates an example of a silicon nitride film forming process, in which N ₂ gas, H ₂ gas, and Ar gas are used as process gases, SiH ₄ gas and NH ₃ gas are used as material gases, and a chamber is used. The pressure in 1 is set to a predetermined pressure in the range of 1 to 100 Pa. The gas introduction ratio and the pressure in the chamber 1 are appropriately selected.

When the space region from the dielectric plate 3 to the substrate S to be processed is divided into five, the surface wave-excited plasma is generated in the region 1, and a large number of active nitrogen radicals are generated. In addition to radicals, ions and electrons are generated.
Region 2 is a diffusion region of generated nitrogen radicals. The generated radical species diffuse in the direction of the substrate S to be processed, that is, in the downward direction in FIG. 6, and are sufficiently uniformly distributed until reaching the shower heads 10A, 10B, and 20. Nitrogen radicals pass between each shower head and diffuse further downward. In this region, the SiH ₄ gas and the NH ₃ gas are uniformly discharged from the shower heads 10A, 10B, and 20 as described above.

In region 3, the dissociation reaction of SiH ₄ gas and NH ₃ gas by nitrogen radicals is promoted, and a precursor of silicon nitride is uniformly generated at each point in the region and diffuses downward.
The region 4 is a region where a silicon nitride film can be formed.
In the region 5, the silicon nitride molecules that have reached the target substrate S are deposited on the substrate surface. Silicon nitride molecules undergo migration due to the surface temperature of the substrate to be processed S heated by the heater 5a incorporated in the substrate holder 5, and finally the film quality (crystallinity, refractive index, internal stress, etc.) of the thin film is determined. Is done.

  In the surface wave excitation plasma processing apparatus described above, various types of plasma processing are performed on the substrate S as follows. That is, the surface wave excitation plasma is excited in the upper space in the chamber 1 to generate radical species from the process gas, the material gas is introduced into the lower space by the shower heads 10A, 10B, and 20 and passes between the shower heads. Then, the material gas is dissociated and reacted by the radical species that flow down to the lower space in the chamber 1 to form a film on the substrate S to be processed.

The SWP processing apparatus 100 having the shower heads 10A, 10B, and 20 of the present embodiment described above has the following operational effects.
(1) When the material gas is sent out in the order of the first chamber 11 and the second chamber 12 of the shower heads 10A and 10B, it is arranged in multiple stages with the first chamber 11 and the second chamber 12, so The material gas can be uniformly supplied to the processing substrate S. The shower head 20 also has the same effect.
(2) Uniformity of gas pressure distribution in the second chamber 12 by disposing the gas ejection holes 11b and 12b of the shower heads 10A and 10B so as not to be aligned in a line in the vertical direction of FIG. This further improves the uniformity of the supply of the material gas to the substrate S to be processed. The shower head 20 also has the same effect.
(3) Since the gas ejection direction can be changed by rotating the shower heads 10A and 10B around the axis, the gas concentration distribution on the substrate S to be processed in consideration of the gas supply state by other shower heads. Can be made more uniform.
(4) Since the shower head 20 is configured to eject gas in both horizontal directions in the chamber 1, the material gas can be sufficiently supplied to the adjacent shower heads 10A and 10B. It is possible to make the gas concentration distribution uniform above.
(5) By disposing the adhesion preventing plate 103 on the outer surface of the dispersion plate 12a of the shower heads 10A and 10B, adhesion of reaction products to the dispersion plate 12a can be prevented, and the maintenance frequency of the dispersion plate 12a can be reduced. . That is, it is only necessary to replace the deposition prevention plate 103, and the number of times of cleaning and replacement of the dispersion plate 12a is reduced. Moreover, since the hole diameter of the small hole 103a is set to be equal to or smaller than the thickness of the deposition preventing plate 103, the loading effect can be used and the gas ejection hole 12b can be prevented from being clogged. The same effect can be obtained with the deposition preventing plate 203 of the shower head 20.
(6) Due to the effects (1) to (4), the SWP processing apparatus 100 can perform uniform CVD film formation on the substrate S to be processed, and a thin film with uniform film thickness and film quality can be obtained.
(7) A plurality of shower heads 10A, 10B, and 20 are arranged in parallel, and a mass flow controller is provided for each shower head to finely control the gas supply amount and the mixing ratio of the gases G1 and G2. As a result, since the uniformity of the gas concentration distribution on the substrate S to be processed is improved, it is possible to cope with an increase in the plasma area and an increase in the size of the substrate.

  Although the case where a film is formed on the substrate S to be processed by the SWP processing apparatus 100 has been described above, etching processing or ashing processing can also be performed by the SWP processing apparatus according to the present invention. In this case, a process gas that contributes to plasma generation is jetted into the upper space of the chamber, and a processing gas (in this embodiment, a material gas) that contributes to the etching process or the ashing process is used as the above-described shower heads 10A, 10B, What is necessary is just to eject from 20 to the lower space of a chamber.

Next, a modification of the SWP processing apparatus 100 will be described with reference to FIGS.
FIG. 7 is a longitudinal sectional view schematically showing the SWP processing apparatus 100A. FIG. 8 is a plan view showing a schematic configuration of the SWP processing apparatus 100A of FIG. 7, and shows supply paths of the material gas to the plurality of shower heads 10C, 10D, and 20A. 7 and 8 differ from the shower heads 10A, 10B, 20 or the SWP processing apparatus 100 of the above-described embodiment in the following two points.
(1) The shower heads 10C and 10D have gas introduction ports 14A and 14B at both ends, respectively. The shower head 20A also has gas introduction ports 24A and 24B at both ends. The shower heads 10C and 10D have a structure in which the outer peripheral portions of the gas introduction ports 14A and 14B are in close contact with the O-ring 1e and can be rotated around the axis. The shower heads 10C and 10D are of the same type, but are shown separately for convenience of explanation.
(2) The SWP processing apparatus 100 </ b> A includes an exhaust correction plate 30 that is disposed close to the vacuum exhaust port 6.

  Referring to FIG. 8 regarding the above (1), the gas G1 is supplied from the gas supply system 7 to the shower heads 10C, 20A, and 10D in the chamber 1, and the gas G2 different from the gas G1 is supplied from the gas supply system 8. The In the gas supply system 7, a pipe 7a is branched into three, and mass flow controllers 7b, 7c, and 7d are arranged in each of the three pipes. Similarly, in the gas supply system 8, mass flow controllers 8b, 8c, and 8d are disposed in each of the three branch pipes. Since the outlet sides of the mass flow controllers 7b, 7c, and 7d and the outlet sides of the mass flow controllers 8b, 8c, and 8d are connected to each other, the gases G1 and G2 are mixed. The mixed gas (G1 + G2) branches into two at the branch portions P11, P12, and P13, respectively. The mixed gas branched at the branch portion P11 is supplied from the gas introduction ports 14A and 14B of the shower head 10D, and the mixed gas branched at the branch portion P12 is supplied from the gas introduction ports 24A and 24B of the shower head 20A to the branch portion P13. The branched mixed gas is introduced into each shower head from the gas introduction ports 14A and 14B of the shower head 10C. As described above, since the gas can be introduced into the first stage chambers of the shower heads 10C, 20A, and 10D from both ends of each shower head, the gas pressure distribution in the first stage chamber becomes more uniform. The uniformity of the gas pressure distribution in the final chamber is also increased, and the material gas supply to the substrate S can be made uniform.

  Referring to FIG. 7 for the above (2), the exhaust correction plate 30 is an annular plate provided below the chamber 1 so as to surround the column 5 b of the substrate holder 5. Generally, since the SWP processing apparatus arranges the substrate holder 5 in the center, the vacuum exhaust port 6 must be arranged at a position away from the center. Therefore, the gas flow in the chamber 1 or the gas concentration distribution tends to be asymmetric in the apparatus. By disposing the exhaust correction plate 30 so as to cover the vacuum exhaust port 6, the symmetry of the gas flow or gas concentration distribution is improved, and uniform plasma processing is possible.

  The present invention is not limited to the embodiments described above as long as the characteristics are not impaired. For example, the hollow structures of the shower heads 10A to 10D and the shower heads 20 and 20A are not limited to two stages, and may be multistages of three or more stages. When three or more stages of hollow chambers are provided, the positional relationship between the gas inflow holes and the gas outflow holes of the hollow chamber located in the middle is preferably shifted without being opposed to each other. Moreover, various deformation | transformation can be considered regarding the dimension, shape, arrangement | positioning, etc. of the gas ejection hole 11b, 21b, 12b, 22b of a shower head. Furthermore, various modifications can be considered with respect to the arrangement and number of shower heads 10A to 10D, 20, and 20A in the chamber. For example, when the substrate to be processed has a small area, one of the shower heads 10A to 10D may be used.

It is a longitudinal cross-sectional view (XZ plane cutting | disconnection) which shows typically the structure of the SWP processing apparatus which concerns on embodiment of this invention. It is a longitudinal cross-sectional view (YZ plane cutting | disconnection) which shows typically the structure of the SWP processing apparatus which concerns on embodiment of this invention. FIG. 3A is a diagram schematically illustrating shower heads 10A and 10B according to the embodiment. FIG. 3A is a longitudinal sectional view of the shower heads 10A and 10B cut along the longitudinal direction, and FIG. FIG. 4 is a cross-sectional view taken along line II in FIG. It is a figure which shows typically the shower head 20 which concerns on embodiment, FIG. 4 (a) is the longitudinal cross-sectional view which cut | disconnected the shower head 20 along the longitudinal direction, FIG.4 (b) is FIG. It is sectional drawing cut | disconnected by the II-II line | wire of a). It is a top view which shows schematic structure of the SWP processing apparatus which concerns on embodiment. It is a schematic diagram which shows the reaction process inside the chamber in the SWP processing apparatus which concerns on embodiment. It is a longitudinal cross-sectional view which shows the modification of SWP processing apparatus 100 typically. It is a top view which shows schematic structure of the SWP processing apparatus of the modification of FIG.

Explanation of symbols

1: Chamber 2: Microwave waveguide 3: Dielectric plate 4: Process gas introduction part 10A to 10D, 20, 20A: Shower head 11, 21: First chamber 11a, 21a: Dispersion plate 11b, 21b: Gas ejection hole 12, 22: Second chamber 12a, 22a: Dispersion plate 12b, 22b: Gas injection hole 14, 14A, 14B, 24, 24A, 24B: Gas introduction port 30: Exhaust correction plate 100: SWP processing device 101, 201: Installation Part 102, 202: Gas ejection part 103, 203: Depositing plate 103a, 203a: Small hole S: Substrate to be processed

Claims (7)

A shower head having an ejection pipe for ejecting a processing gas into a chamber of a surface wave excitation plasma processing apparatus,
The ejection pipe is divided by one or a plurality of partition walls extending in the direction of the longitudinal axis, and provided with a plurality of stages of hollow chambers extending in the direction of the longitudinal axis,
In the partition wall, a plurality of communication holes through which the processing gas introduced from the first-stage hollow chamber flows into the second-stage hollow chamber are provided at predetermined intervals in the longitudinal axis direction,
In the final-stage hollow chamber, a plurality of gas ejection holes for ejecting the processing gas into the chamber are provided at predetermined intervals in the direction of the longitudinal axis,
The gas ejection hole is provided so that the processing gas is ejected in one direction orthogonal to the longitudinal axis,
The shower head is further provided with a mounting portion attached to the chamber so as to be rotatable around the longitudinal axis in order to change the direction of the gas ejection hole. A shower head having an ejection pipe for ejecting a processing gas into a chamber of a surface wave excitation plasma processing apparatus,
The ejection pipe is divided by one or a plurality of partition walls extending in the direction of the longitudinal axis, and provided with a plurality of stages of hollow chambers extending in the direction of the longitudinal axis,
In the partition wall, a plurality of communication holes through which the processing gas introduced from the first-stage hollow chamber flows into the second-stage hollow chamber are provided at predetermined intervals in the longitudinal axis direction,
In the final-stage hollow chamber, a plurality of gas ejection holes for ejecting the processing gas into the chamber are provided at predetermined intervals in the direction of the longitudinal axis,
The final-stage hollow chambers are respectively provided on both sides of the first-stage hollow chamber so as to extend in the direction of the longitudinal axis.
The shower head is characterized in that the gas ejection holes of the hollow chamber in the final stage are provided so as to eject the processing gas in directions orthogonal to the longitudinal axis direction and facing each other. The showerhead according to claim 1, wherein
The communication hole and the gas ejection hole as the gas inflow hole provided facing the hollow chamber of the final stage, or the communication hole and the gas outflow hole as a gas inflow hole provided to face the hollow chamber of the intermediate stage The shower head is arranged so as not to face each other as the communication hole. The shower head according to claim 2,
A shower head, characterized in that a deposition plate having a small hole is disposed at a position facing the gas ejection hole so as to cover an outer surface of the final-stage hollow chamber where the gas ejection hole is formed. The shower head according to claim 4,
The diameter of the small hole is the same as or smaller than the thickness and dimension of the deposition preventing plate.   A surface wave excitation plasma is generated in an upper space in the chamber, and the shower head according to any one of claims 1 to 5 is disposed so as to extend in a horizontal direction to be processed in the lower space in the chamber. A surface wave excitation plasma processing apparatus for performing various plasma processing by introducing a gas and dissociating and reacting the processing gas. In the surface wave excitation plasma processing apparatus according to claim 6,
The shower head according to any one of claims 2 , 4 , and 5 , wherein the processing gas is ejected in a central portion of the chamber in a direction facing each other. 1 shower head,
The 2nd shower head comprised so that the said process gas may be ejected in one direction among the shower heads as described in any one of Claim 1 and 3 on the both sides of the said 1st shower head. A surface-wave-excited plasma processing apparatus, characterized in that each is disposed.

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