CN107093544B - Pre-cleaning cavity and semiconductor processing equipment - Google Patents
Pre-cleaning cavity and semiconductor processing equipment Download PDFInfo
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- CN107093544B CN107093544B CN201610091504.8A CN201610091504A CN107093544B CN 107093544 B CN107093544 B CN 107093544B CN 201610091504 A CN201610091504 A CN 201610091504A CN 107093544 B CN107093544 B CN 107093544B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
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- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Pre-cleaning cavity and semiconductor processing equipment provided by the invention, including cavity, the medium window and inlet duct that are arranged at the top of the cavity, technique component is surrounded in pre-cleaning cavity, the space that the technique component and medium window limit jointly is used as the sub- chamber of technique, and cavity is located at the space below technique component and is used as the sub- chamber of handling；Inlet duct includes the symmetrical multichannel gas circuit of axis centre relative to technique component, and every road gas circuit is connected with the sub- chamber of technique, intracavitary for process gas to be directly delivered to technique from the top of technique component.Pre-cleaning cavity provided by the invention can not only shorten the induction pathway of process gas, reduce the waste of process gas, but also uniform air inlet may be implemented, so as to improve processing quality.
Description
Technical field
The present invention relates to semiconductor equipment manufacturing field, it is related to a kind of pre-cleaning cavity and semiconductor processing equipment.
Background technique
Plasma processing device is widely used in current semiconductor integrated circuit, solar battery, flat-panel monitor etc.
In manufacturing process.The plasma processing device being widely used in industry has with Types Below: for example, direct-current discharge type, electricity
Hold coupling (CCP) type, inductive coupling (ICP) type and electron cyclotron resonace (ECR) type.The plasma process of these types is set
It is standby to be applied to the techniques such as deposition, etching and cleaning at present.
During carrying out technique, in order to improve the quality of product, before implementing depositing operation, first have to chip
It carries out prerinse (Preclean), with impurity such as the oxides that removes wafer surface.The basic principle of general pre-cleaning cavity
It is: excites the purge gas of the argon gas, helium or hydrogen that are passed through wash chamber etc. to form plasma, to chip
Chemical reaction and physical bombardment are carried out, so as to remove the impurity of wafer surface.
A kind of currently used pre-cleaning cavity is formed by cavity and the medium window being arranged at the top of the cavity.In prerinse
It is provided with the pedestal for bearing wafer in chamber, is successively connect with the first adaptation and the first radio-frequency power supply.Medium window is
Using arch top cover made of insulating materials (such as ceramics or quartz), coil is provided with above medium window, which is spiral shell
Spool coil, and successively connect with the second adaptation and the second radio-frequency power supply.Moreover, in pre-cleaning cavity, and be looped around
It states and is provided with technique component around pedestal, process cavity is collectively formed in the technique component, pedestal and medium window, and cavity is in pedestal
The space that lower section is formed is used as handling chamber；Also, the technique component forms air inlet/outlet passageway of labyrinth structure, with for dress
Unload intracavitary process gas disengaging process cavity.In addition, air inlet pipeline is additionally provided on cavity, process gas to be delivered to
Load and unload chamber.The flow direction of process gas are as follows: process gas enters handling chamber from air inlet pipeline, spreads then up, and via
After carrying out uniform flow by the labyrinth structure that technique component is formed, it is excited to form plasma into process cavity.Work after reaction
Skill gas is then passed through technique component and enters handling chamber, and is extracted out by vacuum pump.
Above-mentioned pre-cleaning cavity is inevitably present following problems in practical applications:
First, the path that process gas enters process cavity is too long, so that the time for reaching process cavity is longer, technique effect is influenced
Rate.
Second, since the air pressure in process cavity is greater than the air pressure near vacuum pump port, and vacuum pump is in the mistake for carrying out technique
It is constantly in working condition in journey, most of process gas is caused just directly to be taken away by vacuum pump before not entering process cavity,
To need constantly to supplement a large amount of process gas by air inlet pipeline, to maintain plasma to keep excited state, and then need
More process gas can be only achieved required plasma density, cause the waste of process gas.
Third, only all the way due to air inlet pipeline, process gas is delivered to handling chamber from single direction, this makes work
The path length that skill gas reaches process cavity is not identical, so that gas be caused to be unevenly distributed.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art, propose a kind of pre-cleaning cavity and
Semiconductor processing equipment can not only shorten the induction pathway of process gas, reduce the waste of process gas, but also can be with
Uniform air inlet is realized, so as to improve processing quality.
The present invention provides a kind of pre-cleaning cavities, including cavity and the medium window being arranged at the top of the cavity, described
Technique component is surrounded in pre-cleaning cavity, the space that the technique component and the medium window limit jointly is used as technique
Sub- chamber, the cavity are located at the space below the technique component and are used as the sub- chamber of handling；The pre-cleaning cavity further includes air inlet
Device, the inlet duct include the symmetrical multichannel gas circuit of axis centre relative to the technique component, every road gas circuit and institute
The sub- chamber of technique is stated to be connected, it is intracavitary for process gas to be directly delivered to technique from the top of the technique component.
Preferably, the pre-cleaning cavity includes changeover base, changeover base setting the cavity with given an account of
Between matter window, and it is looped around the outside of the technique component；The multichannel gas circuit is arranged in the changeover base.
Preferably, the changeover base is the symmetrical ring body structurc of axis centre relative to the technique component.
Preferably, the changeover base is square ring body；The gas circuit is four tunnels, and gas circuit described in each road is located at
At the position at four angles of the square ring body.
Preferably, gas circuit described in every road includes inlet channel and air inlet pipeline, wherein the inlet channel is arranged described
In changeover base, and it is connected with the sub- chamber of the technique；Also, the inlet channel of gas circuit described in each road is relative to the technique groups
The axis centre of part is symmetrical；The air inlet pipeline is arranged on the periphery wall of the changeover base, and connects with the inlet channel
It connects, to convey process gas into the inlet channel.
Preferably, the inlet channel includes horizontal channel and Vertical Channel, wherein the upper end of the Vertical Channel and institute
It states the sub- chamber of technique to be connected, the lower end of the Vertical Channel is connect with the inner end of the horizontal channel；The horizontal channel
Outboard end is connect with the air inlet pipeline.
Preferably, in the upper surface of the changeover base, setting is fluted, and the upper end of the Vertical Channel is located at described recessed
In slot.
Preferably, the value range of the diameter of the Vertical Channel is in 2.5~3mm.
Preferably, cooling duct is additionally provided in the changeover base, and on the periphery wall of the changeover base,
And it is located at the sealing element being provided with below the air inlet pipeline for sealing the cooling duct.
It is described the present invention also provides a kind of semiconductor processing equipment, including pre-cleaning cavity as another technical solution
Pre-cleaning cavity uses above-mentioned pre-cleaning cavity provided by the invention.
The invention has the following advantages:
Pre-cleaning cavity provided by the invention, by by multichannel gas circuit from the top of technique component directly by process gas
Body is delivered to that technique is intracavitary, can shorten the induction pathway of process gas, shortens process gas and reach plasma generating area
The time in domain so as to improve process efficiency, and is also possible that all process gas from air inlet can be whole
It is directly extracted so as to avoid some processes gas occurred in the prior art from not reacted into the sub- chamber of technique
Situation, and then may be implemented to be passed through and reach higher plasma density under the premise of less process gas, so as to reduce
Use cost.In addition, the work in multichannel gas circuit can be made by the way that multichannel gas circuit is symmetrical relative to the axis centre of technique component
The intracavitary path length of skill gas arrival technique is identical, so as to realize multichannel process gas evenly into technique
Chamber, and then the intracavitary gas distribution uniformity of technique can be improved, improve processing quality.
Semiconductor processing equipment provided by the invention, by using above-mentioned pre-cleaning cavity provided by the invention, not only
The induction pathway that process gas can be shortened, reduces the waste of process gas, but also uniform air inlet may be implemented, so as to
Improve processing quality.
Detailed description of the invention
Fig. 1 is the cross-sectional view of pre-cleaning cavity provided in an embodiment of the present invention；
Fig. 2 is the top view in Fig. 1 along line A-A；And
Fig. 3 is the enlarged drawing in the region I in Fig. 1.
Specific embodiment
To make those skilled in the art more fully understand technical solution of the present invention, come with reference to the accompanying drawing to the present invention
The pre-cleaning cavity and semiconductor processing equipment of offer are described in detail.
Fig. 1 is the cross-sectional view of pre-cleaning cavity provided in an embodiment of the present invention.Fig. 2 is the top view in Fig. 1 along line A-A.
Fig. 3 is the enlarged drawing in the region I in Fig. 1.Also referring to Fig. 1-3, pre-cleaning cavity is pushed up by cavity 21 and setting in the cavity 21
The formation of medium window 26 in portion.The medium window 26 is using arch top cover made of insulating materials (such as ceramics or quartz).Moreover,
Technique component 23 is surrounded in pre-cleaning cavity, the structure of the technique component 23 as shown in Figure 1, be ring body structurc, and
The space that technique component 23 and medium window 26 limit jointly is used as the sub- chamber 211 of technique, and cavity 21 is located at 23 lower section of technique component
Space be used as and load and unload sub- chamber 210.When carrying out technique, the pedestal (not shown) for bearing wafer is located at above-mentioned technique
In sub- chamber 211, while the sub- chamber 211 of closing process.Before and after technique, which is located in the sub- chamber 210 of above-mentioned handling, to chip
It carries out picking and placing piece operation.
Pre-cleaning cavity further includes inlet duct, which includes multichannel gas circuit, and relative to technique component 23
Axis (center line on vertical direction) central symmetry.Every road gas circuit is connected with the sub- chamber 211 of technique, is used for from technique component 23
Top directly process gas is delivered in the sub- chamber 211 of technique.Process gas generally includes Ar, H2Or He etc..Into
Row it is prewashed during, from each road gas circuit flow out process gas airintake direction as illustrated by the arrows in fig. 1, process gas
It is spread upwards and to center from the surrounding of the sub- chamber 211 of technique.By directly will by multichannel gas circuit from the top of technique component 23
Process gas is delivered in the sub- chamber 211 of technique, can shorten the induction pathway of process gas, is shortened process gas and is reached plasma
The time of body generating region so as to improve process efficiency, and is also possible that all process gas from air inlet
The sub- chamber of technique can be fully entered, it is direct so as to avoid some processes gas occurred in the prior art from not reacted
Extracted situation, and then may be implemented to be passed through and reach higher plasma density under the premise of less process gas, thus
Use cost can be reduced.
Meanwhile by the way that multichannel gas circuit is symmetrical relative to the axis centre of technique component 23, can make in multichannel gas circuit
The path length that process gas reaches in the sub- chamber 211 of technique is identical, so as to realize multichannel process gas evenly into work
The sub- chamber of skill, and then the intracavitary gas distribution uniformity of technique can be improved, improve processing quality.
The structure of above-mentioned inlet duct is described in detail below.Specifically, cavity 21 is in horizontal plane (that is, cavity 21
Radial section) on projection of shape be approximately rectangle.Also, between cavity 21 and medium window 26, and it is looped around technique
The outside of component 23 is additionally provided with changeover base 22, and the changeover base 22 is symmetrical for the axis centre relative to technique component 23
Square ring body.
The gas circuit of inlet duct has four tunnels, and four tunnel gas circuits are arranged in changeover base 22, and are located at square ring body
At the position at four angles of the changeover base 22 of structure.In the present embodiment, every road gas circuit includes inlet channel 24 and air inlet pipe
Road 25, wherein the setting of inlet channel 24 is connected in changeover base 22, and with the sub- chamber 211 of technique.Also, each road gas circuit
Inlet channel 24 is located at the position at four angles of square ring body, as shown in Fig. 2, the process gas in each road gas circuit with
Each angle of 22 periphery wall of changeover base is starting point, using the center of the sub- chamber 211 of technique as the flow path D1=D2 of terminal, thus
The path length that can make each inlet channel 24 that process gas is delivered in the sub- chamber 211 of technique is identical, so as to realize
The gas distribution uniformity in the sub- chamber 211 of technique can be improved evenly into the sub- chamber 211 of technique in multichannel process gas,
Improve processing quality.Air inlet pipeline 25 is arranged on the periphery wall of changeover base 22, and connect with inlet channel 24, to into
Process gas is conveyed in gas channel 24.
Process gas is delivered in the sub- chamber 211 of technique from the foregoing, it will be observed that each road gas circuit only relies on changeover base 22, that is, only
Air inlet can be realized using single component.The intake method of single part combines the mode phase of air inlet with the docking of multiple components
Than there is no the defects that the latter has for the former, it may be assumed that first, due between multiple components often because of size and rigging error
And lead to gas leakage, cause air inlet uneven；Second, can also be difficult to be sealed design because of the limitation of structure between multiple components.
Third, the structure of multiple components is more complex, and difficult to install.
In the present embodiment, as shown in figure 3, inlet channel 24 includes horizontal channel 241 and Vertical Channel 242, wherein perpendicular
The upper end of straight channel 242 is connected with the sub- chamber 211 of technique, and the inner end of the lower end and horizontal channel 241 of Vertical Channel 242 (is leaned on
One end of nearly technique component 23) connection；Outboard end (one end far from technique component 23) and the air inlet pipeline 25 of horizontal channel 241
Connection.In technical process, process gas successively flows into technique via air inlet pipeline 25, horizontal channel 241 and Vertical Channel 241
In sub- chamber 211.Preferably, the value range of the diameter d of Vertical Channel is in 2.5~3mm, to play the role of uniform flow.
In the present embodiment, it is arranged in due to medium window 26 on the upper surface of changeover base 22, in order to guarantee Vertical Channel
242 upper end is smoothly connected to the sub- chamber 211 of technique, is arranged fluted 221 in the upper surface of changeover base 22, in changeover base
The opening passed through for process gas is formed between 22 upper surface and medium window 26, the upper end of Vertical Channel 242 is located at groove
In 221, to be flowed into the sub- chamber 211 of technique from the process gas that Vertical Channel 242 flows out via the opening.
Preferably, cooling duct (not shown) is additionally provided in changeover base 22, by into the cooling duct
It is passed through cooling water, to cool down changeover base 22.Preferably, in order to guarantee that cooling duct is not interfered with each other with inlet channel, Ke Yijin
Possibly minimize the sealing structure of cooling duct and inlet channel.Preferably, in the present embodiment, in changeover base 22
On periphery wall, and the lower section for being located at air inlet pipeline 25 is provided with the sealing element 27 for sealing cooling duct, that is, makes cooling duct
Sealing with inlet channel is arranged up and down, to avoid interference.
It should be noted that in the present embodiment, changeover base 22 is symmetrical for the axis centre relative to technique component 23
Square ring body, but the present invention is not limited thereto, and in practical applications, changeover base can also be according to the shape of cavity
Using the ring body structurc of the symmetrical other arbitrary shapes of axis centre relative to technique component, such as rounded ring body, diamond shape ring
Body etc..Alternatively, changeover base 22 can also use asymmetrical ring body structurc.The distribution mode of the inlet channel of each road gas circuit
Can be adaptively adjusted according to the shape of different changeover bases, if can relative to technique component axis centre it is symmetrical
Distribution.
It should also be noted that, in the present embodiment, medium window 26 uses domes, but the invention is not limited to
This, in practical applications, medium window can also be according to specific needs using any other structure of barrel-like structure etc..
As another technical solution, the embodiment of the present invention also provides a kind of semiconductor processing equipment, including prerinse chamber
Room, the pre-cleaning cavity use the pre-cleaning cavity that the above embodiment of the present invention provides.
Semiconductor processing equipment provided in an embodiment of the present invention provides above-mentioned by using the above embodiment of the present invention
Pre-cleaning cavity can not only shorten the induction pathway of process gas, reduce the waste of process gas, but also may be implemented
Even air inlet, so as to improve processing quality.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (7)
1. a kind of pre-cleaning cavity, including cavity and the medium window being arranged at the top of the cavity, in the pre-cleaning cavity inner ring
It is provided around technique component, the space that the technique component and the medium window limit jointly is used as the sub- chamber of technique, the cavity
Space below the technique component, which is used as, loads and unloads sub- chamber；The pre-cleaning cavity further includes inlet duct, and feature exists
In, the inlet duct include the symmetrical multichannel gas circuit of axis centre relative to the technique component, every road gas circuit with it is described
The sub- chamber of technique is connected, intracavitary for process gas to be directly delivered to technique from the top of the technique component；
The pre-cleaning cavity includes changeover base, and the changeover base is arranged between the cavity and the medium window, and
It is looped around the outside of the technique component；The multichannel gas circuit is arranged in the changeover base；
The changeover base is the symmetrical square ring body of axis centre relative to the technique component；The gas circuit is four
Road, and gas circuit described in each road is located at the position at four angles of the square ring body.
2. pre-cleaning cavity according to claim 1, which is characterized in that gas circuit described in every road includes inlet channel and air inlet
Pipeline, wherein
The inlet channel setting is connected in the changeover base, and with the sub- chamber of the technique；Also, gas circuit described in each road
Inlet channel it is symmetrical relative to the axis centre of the technique component；
The air inlet pipeline is arranged on the periphery wall of the changeover base, and connect with the inlet channel, to described
Process gas is conveyed in inlet channel.
3. pre-cleaning cavity according to claim 2, which is characterized in that the inlet channel includes horizontal channel and vertical
Channel, wherein
The upper end of the Vertical Channel is connected with the sub- chamber of the technique, the lower end of the Vertical Channel and the horizontal channel
Inner end connection；
The outboard end of the horizontal channel is connect with the air inlet pipeline.
4. pre-cleaning cavity according to claim 3, which is characterized in that be provided in the upper surface of the changeover base recessed
The upper end of slot, the Vertical Channel is located in the groove.
5. pre-cleaning cavity according to claim 3, which is characterized in that the value range of the diameter of the Vertical Channel exists
2.5~3mm.
6. pre-cleaning cavity according to claim 2, which is characterized in that be additionally provided in the changeover base cooling logical
Road, and on the periphery wall of the changeover base, and be located at below the air inlet pipeline be provided with it is described cold for sealing
But the sealing element in channel.
7. a kind of semiconductor processing equipment, including pre-cleaning cavity, which is characterized in that the pre-cleaning cavity uses claim
Pre-cleaning cavity described in 1-6 any one.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610091504.8A CN107093544B (en) | 2016-02-18 | 2016-02-18 | Pre-cleaning cavity and semiconductor processing equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610091504.8A CN107093544B (en) | 2016-02-18 | 2016-02-18 | Pre-cleaning cavity and semiconductor processing equipment |
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| CN107093544A CN107093544A (en) | 2017-08-25 |
| CN107093544B true CN107093544B (en) | 2019-01-18 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109755089B (en) * | 2017-11-07 | 2021-05-07 | 北京北方华创微电子装备有限公司 | Plasma cavity and semiconductor processing equipment |
| CN110349830B (en) | 2019-09-09 | 2020-02-14 | 北京北方华创微电子装备有限公司 | Plasma system and filtering device applied to plasma system |
| CN112713073B (en) * | 2019-10-24 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | Corrosion-resistant gas conveying component and plasma processing device thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752274A (en) * | 2013-12-29 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Processing chamber and semiconductor processing equipment |
| CN105695936A (en) * | 2014-11-26 | 2016-06-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pre-cleaning chamber and plasma processing apparatus |
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| KR20130062486A (en) * | 2011-12-05 | 2013-06-13 | 주식회사 테스 | Substrate processing apparatus |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752274A (en) * | 2013-12-29 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Processing chamber and semiconductor processing equipment |
| CN105695936A (en) * | 2014-11-26 | 2016-06-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pre-cleaning chamber and plasma processing apparatus |
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