TWM632959U - Plasma etching apparatus with integrated gas delivery system - Google Patents

Abstract

The invention discloses a plasma etching equipment integrated with a gas delivery system, which includes: an equipment box, a plurality of reaction chambers arranged in the equipment box, and a gas delivery system integrated in the equipment box; wherein, the gas delivery system includes : The first gas source used to pass into the reaction chamber, the first gas source contains corrosive gas; the gas delivery system is adjacent to the reaction chamber, so as to realize the rapid switching of the gas passing into the reaction chamber. This creation integrates the gas delivery system storing corrosive gas into the equipment box of the etching equipment, which can meet the requirements of rapid alternation between the etching step and the deposition step in the special TSV process.

Description

Plasma etching equipment with integrated gas delivery system

The invention relates to the technical field of semiconductor equipment, in particular to a plasma etching equipment integrated with a gas delivery system.

Plasma reaction devices are widely used in the manufacturing process of integrated circuits, such as deposition and etching. Among them, commonly used plasma reaction devices include capacitively coupled plasma reaction devices (Capacitively Coupled Plasma, CCP) and inductively coupled plasma devices (Inductively Coupled Plasma, ICP), which mainly use radio frequency power to input the reaction in the reaction device The gas dissociates into plasma, which is used to perform plasma etching on the substrate placed inside it.

In order to improve the verticality and roughness requirements of the sidewall of the through hole, the prior art usually adopts the Bosch (Bosch) etching process when etching the through silicon via (TSV), and the etching is carried out through the following steps: first, etching In the first step, the etching gas is fed into the plasma reaction chamber, and the through hole is etched on the surface of the silicon substrate; the second step is the polymer deposition step, the deposition gas is fed into the plasma reaction chamber, and the deposition gas is deposited on the side wall of the through hole Form sidewall protection. Etching steps and deposition steps are alternated until via etching is complete. The feature of this method is that it can etch deep silicon holes, but because the etching step and the deposition step are performed alternately, a scallop-like rough surface will be formed on the side wall, which will have a negative impact on the subsequent process of the silicon hole. Therefore, in order to ensure silicon hole etching The pass rate needs to be as small as possible for the rough surface of the sidewall of the silicon hole, and the smoother the better. Therefore, one way to reduce the scalloped rough surface of the sidewall of the silicon hole is to increase the alternating frequency of etching steps and deposition steps, and reduce the time required for each etching step and deposition step.

Existing gas delivery systems for storing gas sources are usually set in the form of gas boxes. For etching equipment, the design of the gas cabinet is very important. Its function is to integrate various process gases in a space environment, and to transmit, distribute and mix different gases according to process requirements, and accurately control individual key process gases. Flow control, according to the settings of different steps of the process, it can realize the function of switching and controlling the process gas. Different etching processes require different reactive gases, for example, typical TSV requires Bosch process gases (SF ₆ , C ₄ F ₈ ...), special TSV processes require corrosive gases (Cl ₂ , HBr, BCl ₃ ... ), the design rules and requirements for gas cabinets storing these two types of gases are completely different. The safety requirements for Bosch process gases are relatively low. For CR gas cabinets (Corrosive gas box), higher safety requirements are required (sealing, N ₂ purge, interlock, SEMI certification...), and sufficient space is required to install additional purge lines, purge valves, pressure For components such as switchgear, placement on the floor or on an elevated shelf is the preferred method for safety. FIG. 1 is a schematic diagram of an etching device in the prior art. The plasma etching equipment 10 is provided with a reaction chamber 20, and the plasma etching equipment 10 is provided with a first gas cabinet 30 or a second gas cabinet 30', and both the first gas cabinet 30 and the second gas cabinet 30' are CR gas cabinets . Fig. 1 shows two installation methods of CR gas cabinets, wherein the first gas cabinet 30 is set on the floor, and the second gas cabinet 30' is set on a high place. Since the CR gas cabinet containing corrosive gas or toxic gas is not integrated in the plasma etching equipment, the distance between the gas source and the reaction chamber of the etching equipment is far away, and it will be difficult to realize the rapid alternation of the etching step and the deposition step in the Bosch etching process .

In recent years, there have been some plasma slicing technologies using etching to realize wafer slicing. In the field of semiconductor device manufacturing, a series of identical devices are usually fabricated on different regions on the surface of the same wafer, and then the wafer is cut into individual functional device units (ie, wafers, DIEs). The above dicing process is generally called wafer dicing. Traditional wafer dicing is usually done with the help of dicing tools. Plasma slicing technology uses plasma etching instead of cutters to achieve wafer dicing, and the metal layer in the dicing road needs to be etched by corrosive gases such as Cl ₂ .

The purpose of this creation is to provide a plasma etching equipment integrated with a gas delivery system, which stores corrosive gas, which can meet the requirements of rapid alternation between etching steps and deposition steps in special TSV manufacturing processes.

In order to achieve the above purpose, this creation is realized through the following technical solutions: A plasma etching equipment integrated with a gas delivery system, the plasma etching equipment comprising: an equipment box, a plurality of reaction chambers arranged in the equipment box, and a gas delivery system integrated in the equipment box; Wherein, the gas delivery system includes: a first gas source for passing into the reaction chamber, and the first gas source contains corrosive gas; the gas delivery system is connected with the reaction chamber Adjacent, in order to realize the rapid switching of the gas passing into the reaction chamber.

Optionally, the reaction chamber includes a first reaction chamber and a second reaction chamber; the first reaction chamber is used to etch the wafer to form a semiconductor structure, and the second reaction chamber is used to etch the wafer Plasma slice processing.

Optionally, when the wafer is sliced, the wafer to be sliced is loaded into the workpiece support and then enters the second reaction chamber. The workpiece support includes: a support film and a frame; the second reaction chamber It includes: a pedestal arranged in the second reaction chamber for supporting the wafer, and an elevating assembly arranged outside the pedestal and used for raising or lowering the workpiece support.

Optionally, the lifting assembly includes: a lifting rod arranged on the outside of the base, and a horizontal support connected to the lifting rod, and the horizontal support is used for lifting or lowering the workpiece support, Lift the frame.

Optionally, the reaction chamber is an etching and slicing integrated chamber, which is used for etching the wafer to form a semiconductor structure, and performing plasma slicing treatment on the wafer.

Optionally, the corrosive gas includes: a halogen-containing gas.

Optionally, an electrical box is arranged in the equipment box, and the gas delivery system and the electrical box are arranged on the same side or different sides of the equipment box.

Optionally, the gas delivery system is separated from the electrical box by a partition.

Optionally, the gas delivery system is set in a gas box, and the gas box is set independently of the electrical box.

Optionally, the first gas source further includes: non-corrosive gas; the gas delivery system further includes: a first pipeline for delivering the corrosive gas, and a pipeline for delivering the non-corrosive gas the second pipeline.

Optionally, the first pipeline and the second pipeline are arranged in the same gas box.

Optionally, the first pipeline and the second pipeline are respectively arranged in different spaces.

Optionally, an air leakage monitoring device is provided around the first pipeline.

Optionally, the gas delivery system further includes: a second gas source storing the purge gas, and a third pipeline for delivering the purge gas.

Optionally, the third pipeline is at least partially arranged outside the equipment box.

Optionally, the gas delivery system further includes: an air extraction device, used to maintain the negative pressure in the gas delivery system.

Compared with the prior art, this creation has the following beneficial effects: (1) This creation integrates the gas delivery system storing corrosive gas into the equipment box of the etching equipment, which can realize the rapid switching of the gas passing into the reaction chamber. (2) This creation integrates the gas delivery system storing corrosive gas into the equipment box of the etching equipment, which can integrate the plasma slicing technology and special TSV functions into one equipment. (3) At least part of the third pipeline for transporting purge gas is arranged outside the equipment box, which is beneficial to save the space occupied by the gas delivery system in the equipment box.

In order to make the purpose, technical solution and advantages of this creative embodiment clearer, the technical solutions in this creative embodiment will be clearly and completely described below in conjunction with the accompanying drawings in this creative embodiment. Obviously, the described embodiment It is a part of the embodiments of this creation, but not all of them. Based on the embodiments in this creation, all other embodiments obtained by persons with ordinary knowledge in the technical field of this creation without making progressive changes all belong to the scope of protection of this creation.

In the description of the present creation, the terms "first", "second", "third" and similar qualifiers are used for descriptive purposes only, and should not be understood as indicating or implying relative importance.

It should be noted that all the drawings are in a very simplified form and use inaccurate scales, and are only used to facilitate and clearly illustrate the purpose of the invention embodiment.

Example 1

As shown in FIG. 2 , it is a schematic diagram of a plasma etching device in this embodiment. The plasma etching equipment 10 includes: an equipment box 40 , a reaction chamber 20 disposed in the equipment box 40 , and a gas delivery system 31 integrated in the equipment box 40 . The reaction chamber 20 is located in the middle of the equipment box 40, and both sides of the reaction chamber 20 are provided with an electrical box 50 and a helium gas pipeline. The electrical box 50 is provided with control elements, and the helium gas can be used to cool the wafer. In this embodiment, the gas delivery system 31 is arranged on one side of the equipment box 40 and separated from the electrical box 50 by a partition 60 to keep the space of the gas delivery system 31 and the space of the electrical box 50 airtightly isolated.

The gas delivery system 31 includes: a first gas source for passing into the reaction chamber 20, and the first gas source includes corrosive gas. In this work, corrosive gases refer to Cl ₂ , HBr, BCl ₃ and other highly corrosive gases that require strict safety assurance in the semiconductor industry. Such gases are usually stored in CR gas cabinets and require high safety requirements. For example, Take strict sealing measures; when the parts need to be replaced and the box is opened, a purge gas is required to purge away the corrosive gas that may leak; it needs to pass SEMI (Semiconductor Equipment and Materials International, an international organization for semiconductor equipment and materials) ) certification, etc.

In other embodiments, the electrical box 50 is only provided on one side of the reaction chamber 20 , and the gas delivery system 31 and the electrical box 50 are respectively provided on both sides of the equipment box 40 .

In some other embodiments, no partition 60 is provided between the gas delivery system 31 and the electrical box 50 , but the gas delivery system 31 is set in the gas box, and the gas box is set independently from the electrical box 50 . The partition 60 or the gas box etc. ensure the sealing of the gas delivery system 31 to ensure the safety of use.

Integrating the gas conveying system 31 storing corrosive gas into the equipment box 40 of the etching equipment can shorten the distance for conveying the corrosive gas to the reaction chamber 20, and realize the rapid switching of the gas passing into the reaction chamber 20, meeting special requirements. The etch step and the deposition step in the TSV process need to alternate rapidly. By setting the partition 60 or an independent gas box, the gas delivery system 31 is isolated from other accessories in the equipment box 40 to achieve sealing and ensure safe use.

The reaction chamber 20 provided in the equipment box 40 is not limited to one. Etching equipment with two or more reaction chambers 20 can share the same gas delivery system 31 .

3 and 4 are partial schematic views of the interior of plasma etching apparatus 10 showing gas delivery system 31 and electrical box 50 . The first gas source also includes: a non-corrosive gas. In this work, non-corrosive gases refer to conventional Bosch process gases, such as SF ₆ , C ₄ F ₈ , etc., which have relatively low safety requirements. For this type of gas, it is not mandatory to use _N2 to purge the gas that may leak when the box needs to be opened. As shown in FIG. 3 and FIG. 4 , the gas delivery system 31 delivers corrosive gas through a first pipeline 311 and delivers non-corrosive gas through a second pipeline 312 . The gas delivery system 31 further includes: a second gas source for storing the purge gas, and a third pipeline 313 for delivering the purge gas (see FIG. 6 ). Before the parts need to be replaced and the box is unpacked, the space where the first pipeline 311 is located needs to be purged with purge gas. Use the air extraction device 70 to form a negative pressure, and the purge gas will blow the corrosive gas that may leak to the air extraction side and discharge it, and then open the box to ensure the safety of the operator. In the embodiment shown in FIG. 3 , the first pipeline 311 and the second pipeline 312 are arranged in the same space, and the third pipeline 313 purges the entire space. In the embodiment shown in FIG. 4 , the first pipeline 311 and the second pipeline 312 are arranged in different spaces, and the third pipeline 313 only purges the space where the first pipeline 311 is located. A gas leakage monitoring device is provided around the first pipeline 311 to monitor whether there is leakage of corrosive gas.

FIG. 5 is a schematic diagram of the gas delivery system 31 . FIG. 6 is an A-A sectional view of the gas delivery system 31 shown in FIG. 5 . The gas delivery system 31 uses gas cylinders to store gas. As shown in Figure 5, the gas cylinder has control valves (V1, V2...V6), which are connected to the purge valve (Purge Valve) and the flow controller (MFC), and the flow controller realizes precise control of the gas flow.

The limited space is the biggest difficulty in the design of multifunctional etching equipment. In view of the limitation of the space of the plasma etching equipment box, when installing the gas delivery system 31, space should be saved as much as possible. Therefore, as shown in FIG. 6, in some embodiments, the main body of the third pipeline 313 is arranged outside the equipment box 40, that is, the two ends of the third pipeline 313 are connected to the inside of the gas delivery system 31, and the main body is exposed to The equipment box is, for example, exposed on the bottom or the back side of the equipment box 40 , thereby saving the space occupied by the gas delivery system 31 .

Plasma slicing technology and special TSV process adopt similar gas configuration, so it is possible to try to combine the two functions into one etching equipment to save etching space and cost.

Example 2

FIG. 7 is a schematic diagram of an etching device integrated with a plasma slicing technology and a special TSV function according to Embodiment 2. FIG. The etching equipment shown in FIG. 7 is provided with two reaction chambers 20 , namely a first reaction chamber 201 and a second reaction chamber 202 . The first reaction chamber 201 is used to etch a wafer, for example, using a TSV process to form a semiconductor structure. The second reaction chamber 202 is used for performing plasma slicing processing on the wafer. The wafers processed by the first reaction chamber 201 are transported into the second reaction chamber 202 for plasma slicing treatment.

FIG. 8 is a schematic diagram of the first reaction chamber 201 . The first reaction chamber 201 is a vacuum reaction chamber, including a substantially cylindrical reaction chamber sidewall made of metal material. A gas injection port is provided on the side wall of the reaction chamber, and the gas injection port is used to inject reaction gas into the vacuum reaction chamber, and the reaction gas is ionized to generate plasma. A base for supporting the wafer is provided in the first reaction chamber 201. The base may be an electrostatic chuck, and an electrostatic electrode is arranged inside the electrostatic chuck to generate electrostatic attraction, so as to support the wafer 90 to be processed during the process. fixed. Plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, and free radicals. The above-mentioned active particles can undergo various physical and chemical reactions with the surface of the wafer to be processed, resulting in changes in the morphology of the wafer surface. , that is, the etching process is completed. A plurality of lifting elements are arranged on the outside of the base, and a wafer edge protection ring 204 is arranged on the upper part of the lifting elements. In order to meet the wafer edge protection requirements required by certain processes, the first reaction chamber 201 is provided with a wafer edge protection ring 204 surrounding and covering the edge of the wafer 90 to be processed. The inner diameter of the wafer edge protection ring 204 is smaller than the outer diameter of the wafer 90, and the wafer edge protection ring 204 needs to be removed first when the wafer is transferred, and a plurality of lifting elements are used to lift the wafer edge Guard ring 204 . Wherein, the lifting element includes a lifting rod 207 for driving the wafer edge protection ring 204 to lift.

An insert ring 206 (insert ring) is arranged around the base of the first reaction chamber 201, and a focus ring 205 (focus ring) surrounding the electrostatic chuck is arranged above the insert ring 206. The focus ring 205 is used to adjust the electric field or temperature distribution around the wafer , to improve the uniformity of wafer processing. The base is provided with lift pins 208 (lift pins) for lifting the wafer 90 to realize wafer unloading.

Wafer dicing is an indispensable process in the wafer manufacturing process, and it belongs to the subsequent process in wafer manufacturing. Wafer dicing is to divide the entire wafer into single wafers (die, DIEs) according to the wafer size. In order to facilitate subsequent processing of the wafer after slicing, a thin film can usually be adhered to the back of the wafer, and the divided wafers after slicing are still adhered to the thin film. As shown in FIG. 9 , before the wafer 90 is sliced, the wafer 90 to be processed is preloaded on the workpiece support 80 . The workpiece support 80 includes: a support film 82 and a frame 81 . The frame 81 is ring-shaped, with a circular opening inside. The support film 82 is adhesively mounted to the surface of the frame 81 and completely covers the circular opening of the frame 81 . The wafer is adhesively mounted to the upper surface of the support film 82 within the opening. When slicing is required, the fixed wafer 90 is sent into the second reaction chamber 202 together with the workpiece support 80 . As shown in Figure 10, during slicing, the photoresist can be covered on the wafer area of the wafer, and the uncovered part forms a dicing line 902, and the formed plasma is on the dicing line 902, including depositing on the dicing line 902 The inner metal layer 903 is etched, thereby dividing the entire wafer into individual wafers. Although the diced wafers are still adhered to the support film 82, because the first reaction chamber 201 lifts the wafers by lifting the thimble 208 to realize unloading, all the wafers cannot be lifted up smoothly, which will lead to disordered wafer arrangement , so it is necessary to improve the first reaction chamber 201 to be suitable for plasma slicing technology.

FIG. 11 is a schematic diagram of the second reaction chamber 202 . The second reaction chamber 202 is equipped with a transverse support 209 on the lifting rod 207 of the first reaction chamber 201 , and the transverse support 209 is arranged under the wafer edge protection ring 204 . The transverse bracket 209 is used to hold the frame 81 when the workpiece support 80 is raised or lowered. The length of the horizontal support 209 should not exceed the base, so as to avoid contact with the base when lifting. The transverse support 209 can support the frame 81 . During slicing, the wafer 90 together with the support film 82 and the frame 81 is sent into the second reaction chamber 202, the frame 81 is supported by the base, and the wafer is divided into independent wafers under the action of plasma. After the slicing is finished, the elevating rod 207 is lifted to drive the horizontal support 209 to be lifted, so that the frame 81 is detached from the base. The side wall of the second reaction chamber 202 is provided with a wafer transfer port, and when the wafer is lifted to a predetermined height, the manipulator (not shown in the figure) arranged outside the second reaction chamber 202 will transfer the wafer through the wafer transfer port. take out.

Since the second reaction chamber 202 is improved on the basis of the first reaction chamber 201, the second reaction chamber 202 can also be used to etch the wafer, for example, using a TSV process to form a semiconductor structure, that is, the second reaction chamber 202 serves as Etching and slicing in one cavity.

In some other embodiments, it is only necessary to add a lifting element in the conventional reaction chamber to realize the function of the second reaction chamber 202 , and it is not limited to set the wafer edge protection ring 204 on the upper part of the lifting element.

Example 3

FIG. 12 shows a schematic diagram of an etching device integrating plasma slicing technology and TSV function according to Embodiment 3. FIG. The two reaction chambers of the etching equipment shown in FIG. 12 are both etching and slicing integrated chambers 203. In the same reaction chamber, the wafer can be etched to form a semiconductor structure, and the wafer can also be processed by plasma slicing. After completing the TSV function, the wafer is taken out of the reaction chamber, installed with the workpiece support 80, and returned to the reaction chamber for plasma etching. Refer to FIG. 11 for the internal structure of the integrated slice chamber of the etching device shown in FIG. 12 .

To sum up, this creation integrates the gas delivery system storing corrosive gas into the equipment box of the etching equipment, so that the distance between the corrosive gas and the reaction chamber is shortened, the distance from the corrosive gas to the reaction chamber is shortened, and the communication is realized. Rapid switching of gases into the reaction chamber. This creation can overcome the problem that the current CR gas cabinet is installed on the floor or at a high place. Due to the long distance between the gas source and the reaction chamber of the etching equipment, it is difficult to realize the rapid alternation of the etching step and the deposition step in the Bosch etching process. TSV process requirements. In addition, this creation integrates the gas delivery system storing corrosive gas into the equipment box of the etching equipment, which can integrate the plasma slicing technology and special TSV functions into one equipment.

Although the content of this creation has been introduced in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as a limitation on this creation. Various modifications and substitutions will be apparent to those having ordinary knowledge in the technical field to which this creation pertains after reading the foregoing. Therefore, the scope of protection of this creation should be limited by the scope of the attached patent application.

10: Plasma etching equipment 20: reaction chamber 201: The first reaction chamber 202: the second reaction chamber 203: Etching and slicing cavity 204: Wafer edge protection ring 205:Focus ring 206: insert ring 207: Lifting rod 208: lift thimble 209: horizontal support 30: The first gas tank 30': second gas cabinet 31: Gas delivery system 311: The first pipeline 312: Second pipeline 313: The third pipeline 40: Equipment box 50: Electrical box 60: Partition 70: Air extraction device 80: Work piece support 81: frame 82: Support membrane 90: Wafer 902: Cutting Road 903: metal layer

FIG. 1 is a schematic diagram of a prior art plasma etching device. FIG. 2 is a schematic diagram of the plasma etching equipment of Embodiment 1. FIG. FIG. 3 is a partial schematic view of the interior of a plasma etching device according to an embodiment of the present invention. FIG. 4 is a partial schematic view of the interior of a plasma etching device according to another embodiment of the present invention. Figure 5 is a schematic diagram of the gas delivery system of the present invention. Fig. 6 is an A-A sectional view of the gas delivery system shown in Fig. 5 . FIG. 7 is a schematic diagram of an etching device integrating a plasma slicing function and a special TSV function according to Embodiment 2. FIG. FIG. 8 is a schematic diagram of an embodiment of the first reaction chamber of the present invention. FIG. 9 is a schematic view of wafers preloaded onto workpiece supports. FIG. 10 is a schematic diagram of dicing a wafer to form a single wafer. FIG. 11 is a schematic diagram of an embodiment of the second reaction chamber of the present invention. FIG. 12 is a schematic diagram of an etching device integrated with a plasma slicing function and a special TSV function according to Embodiment 3. FIG.

10: Plasma etching equipment

20: reaction chamber

31: Gas delivery system

40: Equipment box

50: Electrical box

60: Partition

Claims (16)

A plasma etching equipment integrated with a gas delivery system, wherein the plasma etching equipment includes: an equipment box, a plurality of reaction chambers arranged in the equipment box, and a gas delivery system integrated in the equipment box; in, The gas delivery system includes: a first gas source for passing into the reaction chamber, the first gas source includes a corrosive gas; The gas delivery system is adjacent to the reaction chamber, so as to realize rapid switching of the gas passing into the reaction chamber. According to the plasma etching equipment integrated with the gas delivery system described in claim 1, wherein the reaction chamber includes a first reaction chamber and a second reaction chamber; the first reaction chamber is used to etch the wafer, so as to A semiconductor structure is formed, and the second reaction chamber is used for performing plasma slicing processing on the wafer. According to the plasma etching equipment integrated with the gas delivery system described in Claim 2, wherein when the wafer is sliced, the wafer to be sliced is loaded on a workpiece support and enters the second reaction chamber, and the workpiece The supporting member includes: a supporting film and a frame; the second reaction chamber includes: a pedestal arranged in the second reaction chamber and used to support the wafer, and arranged outside the pedestal and used to lift or sink the workpiece A lift assembly for the support. According to the plasma etching equipment integrated with a gas delivery system according to claim 3, wherein the lifting assembly includes: a lifting rod arranged outside the base, and a horizontal support connected to the lifting rod, the horizontal support Used to lift the frame when raising or lowering the workpiece support. According to the plasma etching equipment integrated with a gas delivery system according to claim 1, wherein the reaction chamber is an etching and slicing integrated chamber, which is used to etch the wafer to form a semiconductor structure, and perform plasma slicing on the wafer deal with. According to the plasma etching equipment integrated with a gas delivery system according to Claim 1, wherein the corrosive gas includes: a halogen-containing gas. According to the plasma etching equipment integrated with the gas delivery system described in claim 1, an electrical box is arranged in the equipment box, and the gas delivery system and the gas box are arranged on the same side or different sides of the equipment box. According to the plasma etching equipment integrated with the gas delivery system according to Claim 7, the gas delivery system is separated from the electrical box by a partition. According to the plasma etching equipment integrated with the gas delivery system described in Claim 7, wherein the gas delivery system is arranged in a gas box, and the gas box is arranged independently of the electrical box. According to the plasma etching equipment integrated with a gas delivery system according to claim 1, wherein the first gas source further includes: a non-corrosive gas; the gas delivery system further includes: a device for delivering the corrosive gas The first pipeline, and a second pipeline for transporting the non-corrosive gas. According to the plasma etching equipment integrated with a gas delivery system according to Claim 10, wherein the first pipeline and the second pipeline are arranged in the same gas box. According to the plasma etching equipment integrated with a gas delivery system according to Claim 10, wherein the first pipeline and the second pipeline are respectively arranged in different spaces. According to the plasma etching equipment integrated with a gas delivery system according to claim 10, a gas leakage monitoring device is arranged around the first pipeline. According to the plasma etching equipment integrated with a gas delivery system according to claim 10, wherein the gas delivery system further includes: a second gas source storing a purge gas, and a first gas source for delivering the purge gas Three lines. According to the plasma etching equipment integrated with a gas delivery system according to claim 14, the third pipeline is at least partially arranged outside the equipment box. According to the plasma etching equipment integrated with a gas delivery system according to Claim 15, wherein the gas delivery system further comprises: a gas pumping device for maintaining the negative pressure in the gas delivery system.

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