CN113737155A - Cavity lining device for improving PECVD (plasma enhanced chemical vapor deposition) cleaning efficiency - Google Patents
Cavity lining device for improving PECVD (plasma enhanced chemical vapor deposition) cleaning efficiency Download PDFInfo
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- CN113737155A CN113737155A CN202010474933.XA CN202010474933A CN113737155A CN 113737155 A CN113737155 A CN 113737155A CN 202010474933 A CN202010474933 A CN 202010474933A CN 113737155 A CN113737155 A CN 113737155A
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- cavity
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- ceramic ring
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention relates to a cavity lining device for improving PECVD (plasma enhanced chemical vapor deposition) cleaning efficiency, which is arranged in a cavity and comprises a ceramic ring and a lining, wherein the ceramic ring is nested above the lining, an annular air pumping channel is formed among the ceramic ring, the lining and a cavity wall, and a plurality of small air pumping holes are uniformly distributed on the periphery of the ceramic ring; the inner liner comprises an axial air exhaust channel, the axial air exhaust channel is arranged on the outer side of the inner liner, and the annular air exhaust channel is communicated with the axial air exhaust channel; the invention solves the problem that the plasma on the inner wall and the bottom of the cavity can not reach the position to be cleaned thoroughly, the lining device can reduce the space of the cavity, ensures that the cleaning plasma covers the inner wall and the bottom of the cavity, and a plurality of small air pumping holes are arranged on a circle of the ceramic ring, thereby ensuring that the cavity forms uniformly distributed reaction gas and the ceramic ring plays an insulating role.
Description
Technical Field
The invention belongs to the technical field of micro-nano processing, and particularly relates to a cavity lining device for improving PECVD (plasma enhanced chemical vapor deposition) cleaning efficiency.
Background
Plasma Enhanced Chemical Vapor Deposition (PECVD) is a key process in integrated circuit fabrication, and plays an important role in growing thin films. The method comprises a dielectric film, a hard mask and a shallow trench isolation STI filling process. The key parameters of PECVD deposited films include film uniformity, including thickness uniformity, refractive index uniformity, extinction coefficient uniformity, dielectric constant uniformity, etc., and surface and internal particles (particles) of the film that are important to uniformity, which determine the yield of the fabricated chip. The cavity is one of the important sources of particles, and meanwhile, the structural design of the cavity, the position of the pumping hole in the cavity and the shape of the pumping hole directly influence the gas distribution and the uniformity of a deposited film. The internal structure of the PECVD chamber determines the quality of the deposited film.
At present, the PECVD has some defects, on one hand, the residual sediment at the lower part of a cavity is heavier due to the fact that the existing PECVD adopts a lower air exhaust mode, and the film deposition at the bottom of the cavity is thicker and thicker due to the fact that cleaning plasma cannot reach the bottom of the cavity, long-term operation is caused, on the other hand, the plasma cannot be thoroughly cleaned due to the fact that the distance between the inner wall of the cavity and a gas homogenizing disc and a hot stage is relatively far away, and finally falls off along with the accumulation and the thickening of the inner wall of the deposition cavity of the film, so that the cavity pollution is caused.
Disclosure of Invention
The cavity lining device for improving the PECVD cleaning efficiency solves the problem that the inner wall of the cavity and the position where plasma at the bottom of the cavity cannot reach cannot be cleaned thoroughly, and avoids the problem of deposition at the bottom of the cavity and on the inner wall of the cavity.
The technical scheme adopted by the invention for solving the technical problems is as follows: a cavity lining device for improving PECVD cleaning efficiency, which is arranged in a cavity and comprises a ceramic ring and a lining, wherein the ceramic ring is nested above the lining, and an annular air pumping channel is formed in a gap between the ceramic ring and the lining, wherein:
the ceramic ring comprises a plurality of small air exhaust holes, the top of the ceramic ring is annular, the annular inner ring axially extends downwards, and one end of the extending part, which is far away from the ceramic ring, is provided with a circle of small air exhaust holes;
the liner comprises an axial air pumping channel, the top of the liner is annular, the annular inner ring axially extends downwards, and the outer side surface of the extension part is provided with the axial air pumping channel;
the annular air exhaust channel is communicated with the axial air exhaust channel and forms a closed air exhaust channel with the cavity wall.
Preferably, the wafer lifting mechanism further comprises a wafer transfer port and a thimble lifting structure reserved notch for supporting the wafer to lift, the lining extension part is provided with the wafer transfer port, and the bottom end of the lining extension part forms the thimble lifting structure reserved notch towards the concave part of the top of the lining.
Preferably, the top of the liner is provided with an air exhaust port, and the annular air exhaust channel is communicated with the axial air exhaust channel through the air vent.
Preferably, the diameter of the inner lining ring is consistent with that of the ceramic ring inner ring, and the range is 220-300 mm.
Preferably, the diameters of the small air exhaust holes are all 2-6 mm, and the number of the small air exhaust holes is 4-96.
Preferably, the extension length of the extending part of the ceramic ring is 30-100 mm.
Preferably, the extension length of the lining extension part is 200-400 mm.
Preferably, the cross section of the axial air exhaust channel is U-shaped, and the opening faces the cavity wall of the cavity.
Through the technical scheme, compared with the prior art, the invention has the following beneficial effects:
1. the air exhaust position of the invention is above, which is beneficial to reducing the problem of film deposition at the bottom of the cavity;
2. the invention adds the lining, and the lining device formed by combining the lining and the ceramic ring indirectly reduces the cavity space and ensures that the cleaning plasma covers the inner wall and the bottom of the cavity;
3. the ceramic ring can prevent the gas homogenizing disc and the cavity from generating glow discharge;
4. the ceramic ring is provided with a plurality of small air exhaust holes, so that the uniformity of reaction gas is ensured;
5. the relative height of the small air-pumping holes in the cavity ensures the cleaning effect and the quality of the deposited film.
Drawings
The invention is further illustrated with reference to the following figures and examples.
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a cross-sectional view of the chamber of the present invention;
FIG. 3 is a schematic view of the ceramic ring structure of the present invention;
fig. 4 is a schematic view of the lining mechanism of the present invention.
In the figure: 10. a cavity; 20. a ceramic ring; 21. a small air exhaust hole; 30. a liner; 31. a wafer transfer port; 32. a notch is reserved in the thimble lifting structure; 33. an axial pumping channel; 34. an air exhaust port.
Detailed Description
The present invention will now be described in further detail with reference to the accompanying drawings. These drawings are simplified schematic views illustrating only the basic structure of the present invention in a schematic manner, and thus show only the constitution related to the present invention.
Aiming at the problem that the cleaning of the side wall and the bottom of the cavity of the existing PECVD cavity structure is not thorough, the invention provides the cavity lining device for improving the cleaning efficiency of the PECVD, which ensures that the cavity wall and the bottom of the cavity 10 are thoroughly cleaned by changing the capacity and the air exhaust position of the cavity 10, and solves the particle problem of a film and the thorough cleaning problem of the cavity 10.
The operation environment of the invention is that a lining device is arranged in the cavity 10, an air homogenizing disc is arranged above the lining device, a heating table is arranged at the center inside the cavity 10, four thimble holes are arranged on the heating table, and a lifting mechanism is arranged at the bottom of the heating table and used for jacking thimbles to penetrate through the thimble holes. The side wall of the chamber 10 is provided with an opening for transporting the wafer to the hot stage.
As shown in fig. 1, the present invention comprises two parts, one part being a ceramic ring 20 and the other part being a liner 30. As shown in FIG. 2, the ceramic ring 20 nests on top of the liner 30, the ceramic ring 20 and the liner 30 forming an annular pumping channel. As shown in fig. 3, the top of the ceramic ring 20 is annular, and the annular inner ring extends axially downwards, and one end of the extending part, which is far away from the ceramic ring 20, is provided with a ring of small pumping holes 21. As shown in FIG. 4, the liner 30 is annular at the top with an axially upwardly extending top annular outer ring and an axially downwardly extending annular inner ring.
A wafer transfer port 31, a thimble lifting structure reserved notch 32 and an axial air pumping channel 33 are arranged on the outer side surface of the axially downward extending part of the annular inner ring at the top of the lining 30, the wafer transfer port 31 is radially arranged on the axially downward extending part of the annular inner ring at the top of the lining 30, and when the lining device is installed in the cavity 10, the transportation port 31 and an opening formed in the side wall of the cavity 10 are positioned on the same horizontal plane, so that the transportation of wafers is facilitated. The bottom end of the downward extending part of the inner ring is provided with a notch 32 towards the concave part at the top of the lining, the four thimbles can be lifted, one side of the bottom of the hot platform is provided with a lifting mechanism for driving the thimbles to lift, and the lifting mechanism carries out lifting movement in the lifting channel 32. The cross section of the axial pumping channel 33 is U-shaped, and the opening of the axial pumping channel faces the cavity wall of the cavity 10. An air suction opening 34 is formed in the top of the liner 30, the axial air suction channel 33 is arranged right below the air suction opening 34, and the annular air suction channel is communicated with the axial air suction channel 33 through the air suction opening 34.
Example 1
The best embodiment of this embodiment is specifically described below, and the basic structure of a chamber lining apparatus for improving PECVD cleaning efficiency is described above. As shown in FIG. 2, "a" is the diameter of the inner ring of the liner 30, "f" is the diameter of the inner ring of the cavity 10, and "s" is the distance from the uniform disk to the pumping aperture 21. In the scheme, the diameter of the inner ring of the lining 30 (shown as 'a' in fig. 2) and the diameter of the inner ring of the ceramic ring 20 are both 240mm, and the axial downward extension height of the inner ring of the lining 30 is 250 mm. The lining 30 is made of aluminum alloy, and has the advantages of easiness in processing, high yield, low cost and the like, the ceramic ring 20 is made of ceramic and can prevent the gas homogenizing disc and the cavity 10 from generating glow discharge, and the ceramic ring 20 and the lining 30 are combined into the lining device. The lining device indirectly reduces the reaction space of the cavity 10, so that the cleaning plasma can cover the inner wall and the bottom of the cavity, and the inner wall of the cavity 10 can be cleaned thoroughly. The ceramic ring 20 is provided with a plurality of small air-extracting holes 21, the height of the holes of the small air-extracting holes 21 from the air-homogenizing disc is 15mm (s shown in figure 2), the aperture of the small air-extracting holes 21 is 2mm, the number of the small air-extracting holes is 48, and the height of the axially downward extending part of the inner ring of the ceramic ring 20 is 50 mm. The small air exhaust holes 21 are not only beneficial to the stability of the internal cavity pressure of the cavity 10 and the obtainment of more uniform gas distribution, but also beneficial to the reduction of the problem of film deposition at the bottom of the cavity 10. Because the heating table is of a lifting structure, the small air exhaust holes 21 are positioned relatively below the heating table when a film is deposited, so that the small air exhaust holes 21 do not influence the gas distribution between the gas homogenizing disc and the heating table, and the film is prevented from being deposited at the bottom of the cavity 10; when the cavity 10 is cleaned, the hot table is lowered to the position below the small air exhaust hole 21, so that the periphery of the small air exhaust hole 21 can be cleaned, and finally the uniformity of the film and thorough cleaning of the cavity 10 are met.
The ceramic ring 20 and the top of the lining 30 form an annular pumping channel, the annular pumping channel is communicated with the axial pumping channel 33 through the pumping hole 34 formed in the top of the lining 30 and communicated with the cavity 10 through the small pumping hole 21, and the bottom of the axial pumping channel 33 extends to the pumping hole in the bottom of the cavity 10. Annular air exhaust passage with axial air exhaust passage 33 makes this scheme be the mode of bleeding upward, adopts the top to bleed and can avoid on the one hand the reaction material to be in cavity 10 bottom deposit, and because the inside lining device reduces indirectly cavity 10 inner space, cavity 10 inner wall can reach thorough cleaning effect.
The invention mainly solves the problem that the plasma on the inner wall of the cavity 10 and the position at the bottom of the cavity 10 can not reach the plasma, provides the lining device formed by combining the ceramic ring 20 and the lining 30, which can not only reduce the space of the cavity 10 and ensure that the cleaning plasma covers the inner wall and the bottom of the cavity 10, but also ensures the uniformity of reaction gas because of the plurality of small air pumping holes 21 arranged on the ceramic ring 20, the ceramic ring 20 plays a role of preventing a gas homogenizing disc and the cavity 10 from generating glow discharge, and simultaneously skillfully designs the relative height of the small air pumping holes 21 in the cavity 10 and ensures the cleaning effect and the quality of deposited films.
It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The meaning of "and/or" as used herein is intended to include both the individual components or both.
The term "connected" as used herein may mean either a direct connection between components or an indirect connection between components via other components.
In light of the foregoing description of the preferred embodiment of the present invention, many modifications and variations will be apparent to those skilled in the art without departing from the spirit and scope of the invention. The technical scope of the present invention is not limited to the content of the specification, and must be determined according to the scope of the claims.
Claims (8)
1. The utility model provides an improve cavity inside lining device of PECVD cleaning efficiency which installs in cavity (10), its characterized in that: the vacuum pump comprises a ceramic ring (20) and a lining (30), wherein the ceramic ring (20) is nested above the lining (30), an annular pumping channel is formed among the ceramic ring (20), the lining (30) and the inner wall of a cavity (10), and the vacuum pump is characterized in that:
the ceramic ring (20) comprises a plurality of small air exhaust holes (21) in one circle, the top of the ceramic ring (20) is annular, the annular inner ring extends downwards in the axial direction, and one end, far away from the ceramic ring (20), of the extending part is provided with the small air exhaust holes (21) in one circle;
the inner liner (30) comprises an axial air exhaust channel (33), the top of the inner liner (30) is annular, the annular inner ring axially extends downwards, and the outer side surface of the extending part is provided with the axial air exhaust channel (33);
the annular air exhaust channel is communicated with the axial air exhaust channel (33) and forms a closed air exhaust channel with the inner wall of the cavity (10).
2. The apparatus of claim 1, wherein the chamber liner comprises: the wafer lifting structure is characterized by further comprising a wafer transmission opening (31) and a thimble lifting structure reserved opening (32) used for supporting the wafer to lift, the wafer transmission opening (31) is formed in the extension portion of the lining (30), and the thimble lifting structure reserved opening (32) is formed in the concave portion of the bottom end of the extension portion of the lining (30) towards the top of the lining (30).
3. The apparatus of claim 2, wherein the chamber liner comprises: an air suction opening (34) is formed in the top of the inner liner (30), and the annular air suction channel is communicated with the axial air suction channel (33) through the air suction opening (34).
4. The apparatus of claim 3, wherein the chamber liner comprises: the diameter of the inner ring of the lining (30) is consistent with that of the inner ring of the ceramic ring (20), the range is 220-240 mm, and plasma formed between the PECVD hot table and the gas homogenizing disc can reach.
5. The apparatus of claim 4, wherein the chamber liner comprises: the ceramic ring (20) comprises a plurality of small air exhaust holes (21) with the diameter of 2-6 mm, and the number of the small air exhaust holes (21) is 4-96.
6. The apparatus of claim 5, wherein the chamber liner comprises: the extension length of the axial extension part of the ceramic ring (20) is 30-100 mm.
7. The apparatus of claim 6, wherein the chamber liner comprises: the extension length of the extension part of the lining (30) is 200-400 mm.
8. The apparatus of claim 3, wherein the chamber liner comprises: the cross section of the axial air exhaust channel (33) is U-shaped, and the opening faces the cavity wall of the cavity (10).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010474933.XA CN113737155B (en) | 2020-05-29 | 2020-05-29 | Cavity lining device for improving PECVD (plasma enhanced chemical vapor deposition) cleaning efficiency |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010474933.XA CN113737155B (en) | 2020-05-29 | 2020-05-29 | Cavity lining device for improving PECVD (plasma enhanced chemical vapor deposition) cleaning efficiency |
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| Publication Number | Publication Date |
|---|---|
| CN113737155A true CN113737155A (en) | 2021-12-03 |
| CN113737155B CN113737155B (en) | 2023-04-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202010474933.XA Active CN113737155B (en) | 2020-05-29 | 2020-05-29 | Cavity lining device for improving PECVD (plasma enhanced chemical vapor deposition) cleaning efficiency |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6408786B1 (en) * | 1999-09-23 | 2002-06-25 | Lam Research Corporation | Semiconductor processing equipment having tiled ceramic liner |
| CN101399197A (en) * | 2007-09-30 | 2009-04-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chamber lining |
| CN104213102A (en) * | 2014-09-01 | 2014-12-17 | 沈阳拓荆科技有限公司 | Cavity airflow direction changeable structure |
| CN206432234U (en) * | 2016-12-23 | 2017-08-22 | 江苏鲁汶仪器有限公司 | The liner and plasma etching machine reaction chamber of plasma etching machine reaction chamber |
| CN107437490A (en) * | 2016-05-25 | 2017-12-05 | 北京北方华创微电子装备有限公司 | Liner, reaction chamber and semiconductor processing equipment |
| CN108950519A (en) * | 2017-05-19 | 2018-12-07 | 北京北方华创微电子装备有限公司 | The liner and chamber of chamber |
-
2020
- 2020-05-29 CN CN202010474933.XA patent/CN113737155B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6408786B1 (en) * | 1999-09-23 | 2002-06-25 | Lam Research Corporation | Semiconductor processing equipment having tiled ceramic liner |
| CN101399197A (en) * | 2007-09-30 | 2009-04-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chamber lining |
| CN104213102A (en) * | 2014-09-01 | 2014-12-17 | 沈阳拓荆科技有限公司 | Cavity airflow direction changeable structure |
| CN107437490A (en) * | 2016-05-25 | 2017-12-05 | 北京北方华创微电子装备有限公司 | Liner, reaction chamber and semiconductor processing equipment |
| CN206432234U (en) * | 2016-12-23 | 2017-08-22 | 江苏鲁汶仪器有限公司 | The liner and plasma etching machine reaction chamber of plasma etching machine reaction chamber |
| CN108950519A (en) * | 2017-05-19 | 2018-12-07 | 北京北方华创微电子装备有限公司 | The liner and chamber of chamber |
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| CN113737155B (en) | 2023-04-18 |
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Address after: No. 8, Liaohe West Road, Pizhou Economic Development Zone, Xuzhou City, Jiangsu Province, 221000 Applicant after: Jiangsu Luwen Instrument Co.,Ltd. Address before: 221300 No.8, Liaohe West Road, Pizhou Economic Development Zone, Xuzhou City, Jiangsu Province Applicant before: JIANGSU LEUVEN INSTRUMMENTS Co.,Ltd. |
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