CN103903946B - A kind of gas spray for plasma reactor - Google Patents
A kind of gas spray for plasma reactor Download PDFInfo
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- CN103903946B CN103903946B CN201210575314.5A CN201210575314A CN103903946B CN 103903946 B CN103903946 B CN 103903946B CN 201210575314 A CN201210575314 A CN 201210575314A CN 103903946 B CN103903946 B CN 103903946B
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Abstract
The present invention provides a kind of gas spray for plasma reactor, and the gas spray includes bilevel gas distribution grid, multiple stomatas of position correspondence are offered on gas distribution grid.Different zones are mutually isolated between stomata and supply reacting gas to plasma reactor different zones.Wherein there is a shading ring to separate first group of stomata and second group of stomata between different subregions, the shading ring includes an isolation channel and the spacer ring in isolation channel, and compression height of the spacer ring after the fastener is close to the top tank air distribution grid and underlying gas distribution grid is less than or equal to 5%.
Description
Technical field
The present invention relates to corona treatment field, more particularly to a kind of gas spray knot for plasma reactor
Structure.
Background technology
In the manufacturing process of semiconductor equipment, such as during the processing such as etching, deposition, oxidation, sputtering, it will usually profit
Substrate (semiconductor wafer, glass substrate etc.) is handled with plasma.Come typically, for plasma processing apparatus
Say, as the mode of generation plasma, in the plasma processing apparatus of high-frequency discharge mode, including capacitively coupled etc.
Plasma reactor and inductive type plasma reactor.Described capacitively coupled reactor is commonly configured with top electricity
Pole and lower electrode, preferably the two electrode runs parallels are set.Moreover, processed substrate is loaded generally on lower electrode,
The high frequency electric source of plasma generation is put on into upper electrode or lower electrode via integrator.By by the high-frequency electrical
The high-frequency electric field that source is generated accelerates the external electrical of reacting gas, so as to produce plasma lower substrate carried out etc. from
Subprocessing.
In field of semiconductor manufacture, the spray head supplied to pending substrate with shape spray is widely used.Such as wait from
In daughter etching processing equipment, the mounting table for loading substrate is provided with process chamber, the position relative with the mounting table
Spray head is provided with, the surface of the spray head is provided with multiple gas squit holes, is produced with shape spray supply response gas
Gas ions.In order to accurately control the processing effect to substrate fixed in mounting table, obtaining higher homogeneity needs to being passed through
The gas zonal control of reaction chamber.Gas shower is each led into after reacting gas is separated into two kinds of gases by gas fractionation unit
The different zones of head (showerhead), such as central area and outer peripheral areas.Gas spray includes upper and lower two layers of gas point
Fabric swatch, top plate have corresponding stomata with lower plywood, and the stomata bore wherein on top plate is more than the stomata on lower plywood.
In order to avoid the mutual crosstalk of the gas of central area and outer peripheral areas, isolating device is set between the two regions as airtight
Ring washer (O-ring), ring washer, which is placed on, makes the mutual gas barrier in the gas passage inside and outside packing ring in gasket groove, wherein
Gasket groove, which can be opened in top tank air distribution grid, can also be opened in underlying gas distribution grid.In order to ensure central area and outer
The isolation of zone gas is enclosed, packing ring needs adequate thickness so that being produced enough when top plate is mutually fastened with lower plywood with bolt
Pressure.But thicker packing ring also make it that the contact between top plate and lower plywood is inadequate while gas barrier is ensured
Or gap be present, and the gap between top plate and lower plywood can cause the capacity of heat transmission between upper and lower laminate drastically to deteriorate,
Ultimately result in the uneven of Temperature Distribution on monoblock gas spray.Gas spray temperature distributing disproportionation can cause device to become
Shape, and the distribution of polymer deposited during plasma treatment are uneven, and these can all cause the inequality of plasma treatment effect
It is even.
So ensure gas while needing a kind of more preferable gas barrier structure to realize different zones gas barrier in the industry
Levels gas distribution grid in spray head is brought into close contact so that plasma treatment effect keeps homogeneous on substrate.
The content of the invention
It is an object of the invention to provide a kind of gas spray of plasma reactor.Specifically, there is provided a kind of gas spray
Leaching head knot enough exports at least two reacting gas being mutually isolated, while ensures there is homogeneous temperature on gas spray.Institute
Gas spray is stated, including：One gas diverter includes first outlet and second outlet, on a top tank air distribution grid
Connected including first group of stomata with the first outlet, second group of stomata connects with the second outlet, a underlying gas point
Fabric swatch include respectively with described first group of stomata of top tank air distribution grid and multiple stomatas of second group of stomata position correspondence, one
Fastener makes top tank air distribution grid and underlying gas distribution grid mutually be close to fix, and a shading ring separates described first group
Stomata and second group of stomata, the shading ring include an isolation channel and the spacer ring in isolation channel, it is characterised in that
Compression of the spacer ring after the fastener is close to the top tank air distribution grid and underlying gas distribution grid is high
Degree is less than or equal to 5%.
The material of wherein described top tank air distribution grid and underlying gas distribution grid be selected from Si, SiC, AL and graphite it
One.Stomata bore on top tank air distribution grid is more than the stomata bore on the underlying gas distribution grid.Underlying gas is distributed
Plate lower surface also includes one layer of corrosion-resistant material layer.The fastener is selected from one of bolt, screw or clamping device
Brief description of the drawings
Fig. 1 is plasma reactor overall schematic of the present invention；
Fig. 2 is plasma reactor partial enlarged drawing of the present invention；
Embodiment
Below in conjunction with Fig. 1 and 2, first embodiment of the invention is described in detail.
As shown in figure 1, including pedestal 22 in plasma reactor 100 of the present invention, substrate to be handled is fixed on pedestal 22
20, gas spray 11 is simultaneously relative with pedestal 22 as Top electrode, and is fixed on reactor head.Gas spray 11 passes through
Gas pipeline is connected to source of the gas 110.Include a substrate holding apparatus such as electrostatic chuck 21 on pedestal 22.One edge ring 10 is enclosed
Around substrate 20 and substrate holding apparatus 21.Bottom electrode of at least one radio-frequency power supply into pedestal provides rf electric field.Wherein gas
Body spray head internal upper part includes gas diverter, gas diverter by the gas from source of the gas be divided into the first reacting gas and
Second reacting gas respectively by first outlet and second outlet be output to rear end be located at gas spray bottom gas be distributed
Plate.Because gas diverter belongs to the interior known techniques of semiconductor machining industry, the structure species available for realization it is many so
Here is omitted.Close-up sectional view in Fig. 1 in gas spray 11 at A as shown in Fig. 2 gas distribution grid include it is upper
Layer gas distribution grid 120 and underlying gas distribution grid 130, top tank air distribution grid 120 include multiple second gas holes 122, and
Multiple first gas distribution holes 121.By a shading ring reality between first gas distribution hole 121 and second gas distribution hole 122
Now isolate.Shading ring includes an isolation channel 124, includes a packing ring 126 in isolation channel.Underlying gas distribution grid 130 includes
Multiple first gas distribution holes 131 and second gas distribution hole 132.Upper and lower two layers of gas distribution grid 120,130 passes through mechanical tight
It is fixedly mounted with to put 123 (such as bolt, screw or clamping devices) and realize and interfixes, and makes lower surface and the lower floor of top tank air distribution grid
It is close to the upper surface of gas distribution grid 130.Although the result of a bolt in only being shown in Fig. 2, can essentially have it is multiple, such as
2-4 even more, and many places are set on whole gas distribution grid.It is bonded to each other in levels gas distribution grid 120 and 130
When, the position of first gas distribution hole 121 and 131 matches, and empty 122 and 132 positions of second gas distribution match.And upper strata
Gas orifice 121,122 on gas distribution grid has a larger bore, the stomata on underlying gas distribution grid have it is more small-bore,
Both will not also cause air-hole blockage or distortion at the position skew a small amount of in assembling.
Wherein gas distribution grid also serves as Top electrode coupled electric field, so the material of gas distribution grid 120,130 can select
From the conductor such as Si, SiC, AL and graphite or semiconductor.Wherein underlying gas distribution grid is towards the empty lower surface of plasma treatment
The preserving timber bed of material 140 of one layer of resistant to plasma corrosion can also be coated with, such as aluminum oxide or yittrium oxide.
In order to which the gas for ensureing to flow through in first gas hole and second gas hole will not be between levels gas distribution grid
Gap in cross-mixing, so the packing ring in traditional gas shading ring requires enough thickness in selection parameter, than
Such as packing ring can compress more than 10% height (such as 20%) before and after bolt fastening.The more high upper and lower surface of then packing ring 126 of compression ratio
Pressure between the upper wall of isolation channel 124 and the upper surface of lower plywood 130 is bigger.Although so can guarantee that gas will not be revealed,
It is pressure too big between packing ring 126 and lower plywood, can causes to occur gap, so not only between levels gas distribution grid
Diffuse into one another the gas between the first stomata 121 or the second stomata 122, at the same can also make up and down two layers gas distribution grid it
Between can not carry out effective heat transfer, meeting further causes non-uniform temperature on whole gas distribution grid.On gas distribution grid
Temperature distributing disproportionation the plasma treatment effect in plasma reactor 100 can be caused uneven.
Present invention is designed such that the relatively conventional packing ring of packing ring size is smaller, the diameter before being uncompressed assembles to compression
Diameter afterwards reduce only 5% or so, and such as 4%.Such compression ratio, which can ensure to assemble in levels gas distribution grid, to be completed
After will not due to isolation ring compression it is excessive so that loose contact between two layers of gas distribution grid.Although it may result on shading ring
There is a small amount of gas leakage in subregion, but because the gas nature in two regions approaches, air pressure is also close to so to entirety
Reaction effect influence it is little.On the whole due to ensureing that the homogeneous benefit of the homogeneous plasma treatment effect brought of temperature is long-range
It is unfavorable to be brought in the local a small amount of leakage of gas.
Multiple stomatas on gas distribution grid can be divided at least twoth area, such as center by shading ring of the present invention
Area and external zones or be divided into more than two regions such as center, middle area, external zones etc. any need to reaction gas
The occasion of body subregion supply.Now shading ring will include more than at least two, realize the isolation between multiple regions.Different zones
The gas of supply can also have different flow or gas componant with identical.The present invention is except that can be used for performing etching
Other plasma treatments such as chemical vapor deposition can also be carried out outside.
Although present disclosure is discussed in detail by above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read the above, for the present invention's
A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (5)
1. a kind of gas spray for plasma reactor, including：
One gas diverter includes first outlet and second outlet,
Connected on one top tank air distribution grid including first group of stomata with the first outlet, second group of stomata and described second
Outlet,
One underlying gas distribution grid include respectively with described first group of stomata of top tank air distribution grid and second group of stomata position
Corresponding multiple stomatas,
One fastener makes top tank air distribution grid and underlying gas distribution grid mutually be close to fix,
One shading ring is between the upper and lower gas distribution grid to separate first group of stomata and second group of gas
Hole, the shading ring include an isolation channel and the spacer ring in isolation channel, it is characterised in that the spacer ring exists
The fastener make the top tank air distribution grid and underlying gas distribution grid be close to after compression height be less than or equal to 5%,
Stomata bore on the top tank air distribution grid is more than the stomata bore on the underlying gas distribution grid.
2. gas spray as claimed in claim 1, it is characterised in that：Top tank air distribution grid and the underlying gas distribution
The material of plate is selected from one of Si, SiC, AL and graphite.
3. gas spray as claimed in claim 1, it is characterised in that：The compression height of the spacer ring is less than 4%.
4. gas spray as claimed in claim 1, it is characterised in that：The underlying gas distribution grid lower surface also includes one
Layer corrosion-resistant material layer.
5. gas spray as claimed in claim 1, it is characterised in that：The fastener is selected from bolt, screw or clamping
One of mechanism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210575314.5A CN103903946B (en) | 2012-12-26 | 2012-12-26 | A kind of gas spray for plasma reactor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210575314.5A CN103903946B (en) | 2012-12-26 | 2012-12-26 | A kind of gas spray for plasma reactor |
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| Publication Number | Publication Date |
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| CN103903946A CN103903946A (en) | 2014-07-02 |
| CN103903946B true CN103903946B (en) | 2017-11-17 |
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| CN201210575314.5A Active CN103903946B (en) | 2012-12-26 | 2012-12-26 | A kind of gas spray for plasma reactor |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752144A (en) * | 2015-03-25 | 2015-07-01 | 沈阳拓荆科技有限公司 | Non-complete planar spray header applied to semiconductor plasma processing device |
| CN106935530B (en) * | 2015-12-31 | 2020-04-17 | 中微半导体设备(上海)股份有限公司 | Plasma etching photoresist device |
| CN109817505B (en) * | 2017-11-20 | 2021-09-24 | 长鑫存储技术有限公司 | Plasma supply device and wafer etching device |
| CN111524775B (en) * | 2019-02-01 | 2023-03-10 | 中微半导体设备(上海)股份有限公司 | Plasma processor and upper electrode assembly for plasma processor |
| US11332827B2 (en) * | 2019-03-27 | 2022-05-17 | Applied Materials, Inc. | Gas distribution plate with high aspect ratio holes and a high hole density |
| CN112713074B (en) * | 2019-10-25 | 2023-03-07 | 中微半导体设备(上海)股份有限公司 | Gas shower head assembly and plasma processing equipment |
| CN112922935B (en) * | 2019-12-05 | 2023-06-30 | 中微半导体设备(上海)股份有限公司 | Connection structure and plasma processing apparatus |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5680013A (en) * | 1994-03-15 | 1997-10-21 | Applied Materials, Inc. | Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces |
| CN101231943A (en) * | 2002-11-26 | 2008-07-30 | 东京毅力科创株式会社 | Plasma processing apparatus and method |
| CN101296553A (en) * | 2008-06-25 | 2008-10-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing apparatus |
| CN101587814A (en) * | 2008-05-22 | 2009-11-25 | 东京毅力科创株式会社 | A plasma processing apparatus and a processed air supply apparatus it uses |
| CN102057471A (en) * | 2008-06-09 | 2011-05-11 | 朗姆研究公司 | Showerhead electrode assemblies for plasma processing apparatuses |
-
2012
- 2012-12-26 CN CN201210575314.5A patent/CN103903946B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5680013A (en) * | 1994-03-15 | 1997-10-21 | Applied Materials, Inc. | Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces |
| CN101231943A (en) * | 2002-11-26 | 2008-07-30 | 东京毅力科创株式会社 | Plasma processing apparatus and method |
| CN101587814A (en) * | 2008-05-22 | 2009-11-25 | 东京毅力科创株式会社 | A plasma processing apparatus and a processed air supply apparatus it uses |
| CN102057471A (en) * | 2008-06-09 | 2011-05-11 | 朗姆研究公司 | Showerhead electrode assemblies for plasma processing apparatuses |
| CN101296553A (en) * | 2008-06-25 | 2008-10-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing apparatus |
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| CN103903946A (en) | 2014-07-02 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |