CN109817505B - Plasma supply device and wafer etching device - Google Patents
Plasma supply device and wafer etching device Download PDFInfo
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- CN109817505B CN109817505B CN201711161433.5A CN201711161433A CN109817505B CN 109817505 B CN109817505 B CN 109817505B CN 201711161433 A CN201711161433 A CN 201711161433A CN 109817505 B CN109817505 B CN 109817505B
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Abstract
The invention provides a plasma supply device and a wafer etching device, and relates to the technical field of etching equipment, wherein the plasma supply device comprises a reaction gas component and a gas sprayer, and the reaction gas generated by the reaction gas component is sprayed through the gas sprayer; the gas sparger comprises a body comprising a top surface, a bottom surface and a sidewall, the top surface and the bottom surface being connected by the sidewall; the body is provided with a plurality of air holes, and the air holes are through holes. The problem that the product yield is not high in the prior art can be alleviated, the dust particles are prevented from falling in the middle of the wafer during wafer etching, the dust particles at the center of the wafer can be effectively reduced, and the yield of wafer output is improved.
Description
Technical Field
The invention relates to the technical field of etching equipment, in particular to a plasma supply device and a wafer etching device.
Background
At present, wafer etching is an important step of a semiconductor production process, the quality of etching directly affects the yield of products, and a supply device is often used in wafer etching, and gas is sprayed to the surface of a wafer by the supply device to complete the etching.
In the conventional supply device, some dust particles are often accumulated in the middle of the wafer during the use process, which affects the yield of the product. In addition, as the service time of the supply device is prolonged, the dust particles are more easily sprayed out of the gap of the supply device, resulting in a reduction in the yield of the product.
In summary, the conventional supply apparatus is prone to deposit particles in the middle of the wafer, resulting in low product yield.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a plasma supply device and a wafer etching apparatus, so as to alleviate the technical problem in the prior art that the product yield is not high, and improve the influence of the fine dust particles on the product yield, thereby improving the product yield.
In a first aspect, an embodiment of the present invention provides a plasma supply device for installation in a wafer processing apparatus, the plasma supply device including:
a reactive gas assembly and a gas sparger;
the reaction gas generated by the reaction gas assembly is sprayed through the gas sprayer;
the gas sparger comprises a body comprising a top surface, a bottom surface, and a sidewall, the top surface and the bottom surface being connected by the sidewall;
the body is provided with a plurality of air holes, the air holes are through holes.
With reference to the first aspect, an embodiment of the present invention provides a first possible implementation manner of the first aspect, where the reaction gas assembly includes a gas supply device, a delivery pipe, and a gas concentrator, which are connected in sequence;
the bottom end of the gas concentrator is connected to the top surface of the gas sparger.
With reference to the first aspect, an embodiment of the present invention provides a second possible implementation manner of the first aspect, wherein the plurality of air holes include an inner annular hole, the inner annular hole is coaxial with the body, and the inner annular hole forms an air passage penetrating through the top surface and the bottom surface.
With reference to the first aspect, an embodiment of the present invention provides a third possible implementation manner of the first aspect, where the gas hole further includes an outer ring hole and a side hole, the outer ring hole and the inner ring hole are coaxial, the outer ring hole includes a top outer ring hole disposed at an outer peripheral portion of the top surface and a bottom outer ring hole disposed at an outer peripheral portion of the bottom surface, the top outer ring hole is communicated with the bottom outer ring hole, and the top outer ring hole and the bottom outer ring hole are respectively communicated with the side hole.
With reference to the second possible implementation manner of the first aspect, an embodiment of the present invention provides a fourth possible implementation manner of the first aspect, wherein a flow valve is disposed on the delivery pipeline.
With reference to the first aspect, an embodiment of the present invention provides a fifth possible implementation manner of the first aspect, where the body is an integrally molded structure.
With reference to the first aspect, an embodiment of the present invention provides a sixth possible implementation manner of the first aspect, where the material of the body is ceramic.
With reference to the first aspect, an embodiment of the present invention provides a seventh possible implementation manner of the first aspect, where the top surface and the bottom surface are both circular, and the cross section of the side wall is circular.
With reference to the first aspect, an embodiment of the present invention provides an eighth possible implementation manner of the first aspect, where the top surface and the bottom surface are both square, and the cross section of the side wall is square.
In a second aspect, an embodiment of the present invention further provides a wafer etching apparatus, including a sealed cavity, in which a machine table and the plasma supply apparatus described in any one of the first aspect and possible embodiments thereof are disposed;
the machine station is used for placing wafers, and the plasma supply device is used for spraying reaction gas to the wafers on the machine station.
The embodiment of the invention has the following beneficial effects:
the embodiment of the invention provides a plasma supply device and a wafer etching device, wherein the plasma supply device is used for being installed in a wafer processing device, and specifically, the plasma supply device comprises: the reaction gas component and the gas sprayer, and the reaction gas generated by the reaction gas component is sprayed by the gas sprayer; the gas sparger comprises a body comprising a top surface, a bottom surface and a sidewall, the top surface and the bottom surface being connected by the sidewall; the body is provided with a plurality of air holes, and the air holes are through holes. Therefore, the technical scheme provided by the embodiment is that the plurality of air holes are formed in the body of the gas sprayer, so that the reaction gas is sprayed out through the air holes, the dust particles are prevented from falling in the middle of the wafer during wafer etching, the dust particles at the center of the wafer can be effectively reduced, the adverse effect of the existing supply device on the product yield caused by the dust particles easily accumulated in the middle of the wafer is improved, the problem of low product yield in the prior art is solved, and the yield of wafer output is improved.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic structural diagram of a plasma supply apparatus according to an embodiment of the present invention;
FIG. 2 is an enlarged view of the gas sparger of FIG. 1;
FIG. 3 is a schematic view of another gas spraying device according to the second embodiment of the present invention;
fig. 4 is a schematic structural diagram of a wafer etching apparatus according to a third embodiment of the present invention;
fig. 5 is a schematic diagram of a wafer etching apparatus according to a third embodiment of the present invention during wafer etching;
fig. 6 is a schematic diagram of a wafer etching apparatus according to a third embodiment of the present invention after wafer etching.
Detailed Description
To make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Based on the fact that the existing supply device is easy to accumulate micro-dust particles in the middle of a wafer, and the product yield is low, the plasma supply device and the wafer etching device provided by the embodiment of the invention can relieve the technical problem of low product yield in the prior art, and can improve the influence of the micro-dust particles on the product yield, so that the product yield is improved.
For the convenience of understanding the present embodiment, a plasma supply apparatus disclosed in the present embodiment will be described in detail.
The first embodiment is as follows:
fig. 1 is a schematic structural diagram of a plasma supply device, which can be used in the field of semiconductor etching technology and is specifically installed in a wafer processing apparatus, according to an embodiment of the present invention, and the plasma supply device includes: a reaction gas assembly 30 and a gas sprayer 31.
The reaction gas generated from the reaction gas assembly is sprayed through the gas sprayer.
The gas sparger includes a body.
Wherein the body comprises a top surface 10, a bottom surface 11 and a sidewall 12, the top surface and the bottom surface being connected by the sidewall.
The body is provided with a plurality of pores.
Further, the reaction gas assembly includes a gas supply device (not shown), a delivery pipe 301, and a gas concentrator 302, which are connected in sequence.
The bottom end of the gas concentrator is connected to the top surface of the gas sparger.
Further, a flow valve 3011 is disposed on the delivery pipeline, and the flow valve is used to control the flow rate of the reaction gas, and in one embodiment, the flow valve is an electromagnetic valve.
The gas sprayer 31 will be described in detail in the following embodiments of the present invention, taking as an example that the top surface and the bottom surface of the body are both circular and the cross section of the sidewall in the axial direction is circular:
specifically, referring to fig. 2, the air holes are through holes, and the reaction gas may be sprayed out through the air holes.
Further, the plurality of air holes comprise inner ring holes, the inner ring holes and the body share the same axis, and the inner ring holes form air channels penetrating through the top surface and the bottom surface.
In other words, the inner ring holes include a top surface inner ring hole 101 disposed at the center portion of the top surface and a bottom surface inner ring hole 111 disposed at the center portion of the bottom surface, and the top surface inner ring hole 101 and the bottom surface inner ring hole 111 communicate to form a gas passage penetrating the top surface and the bottom surface center portion.
Further, the gas pocket still includes outer annular ring and side opening, outer annular ring with interior annular ring axle center, outer annular ring is including setting up in top surface outer annular ring 102 of top surface outer peripheral part and setting up in bottom surface outer annular ring 112 of bottom surface outer peripheral part, top surface outer annular ring with bottom surface outer annular ring intercommunication to form the gas passage who runs through top surface and bottom surface outer peripheral part, top surface outer annular ring bottom surface outer annular ring respectively with the side opening is linked together, forms the gas passage of top surface outer peripheral part and lateral wall and the gas passage of bottom surface outer peripheral part and side opening respectively.
Further, the side holes include a first side hole 1211 disposed on the first side wall portion 121 and a second side hole 1221 disposed on the second side wall portion 122.
Specifically, the side wall includes a first side wall 121 and a second side wall 122, and the area of the cross section of the first side wall is larger than that of the cross section of the second side wall along the extending direction of the side wall, the outer wall of the first side wall is circumferentially provided with a plurality of first side holes 1211, and the outer wall of the second side wall is circumferentially provided with a plurality of second side holes 1221. Fig. 2 exemplarily shows a ring of first side holes of the first side wall portion and a ring of second side holes of the second side wall portion.
Further, the body is of an integrally formed structure.
Furthermore, the body is made of ceramic.
According to the plasma supply device provided by the embodiment of the invention, the gas holes are formed in the body of the gas sprayer, so that the reaction gas is sprayed out through the gas holes, the phenomenon that micro-dust particles fall in the middle of a wafer in wafer etching is avoided, the micro-dust particles in the center of the wafer can be effectively reduced, the adverse effect of the existing supply device on the yield of products caused by the fact that the micro-dust particles are easily accumulated in the middle of the wafer is improved, and the yield of the wafer output is improved.
Specifically, a plurality of inner annular holes of the top surface are arranged in a surrounding mode to form a top surface center non-hole area. And a top surface edge non-porous area is formed between the top surface inner annular hole and the top surface outer annular hole.
Example two:
fig. 3 is a schematic structural view of another gas spraying device provided by an embodiment of the present invention, specifically, the gas spraying device includes: the body, this body is solid structure.
Wherein the body comprises a top surface 10, a bottom surface 11 and a sidewall 12, the top surface and the bottom surface being connected by the sidewall.
The body is provided with a plurality of pores.
In this embodiment, the top surface and the bottom surface are both square, and the cross section of the side wall in the axial direction is square.
Specifically, the air holes are through holes, and reaction gas can be sprayed out through the air holes.
Further, the arrangement mode of the air holes comprises the following steps: in a first arrangement, the air holes can be arranged on the top surface of the body and the side wall of the body; the second setting mode is as follows: the air holes can also be arranged on the top surface of the body and the bottom surface of the body; the third setting mode is as follows: the air holes may also be disposed on the top surface of the body, the side walls of the body, and the bottom surface of the body. The arrangement mode of the air holes is specifically selected according to actual requirements, such as spraying amount, spraying speed and etching requirements. A first arrangement of air holes is shown schematically in figure 3.
Further, the plurality of air holes comprise a plurality of input air holes arranged on the top surface and a plurality of output air holes arranged on the side wall.
Specifically, the input air hole includes a top surface inner ring hole 101 provided at a center portion of the top surface and a top surface outer ring hole 102 provided at an outer peripheral portion of the top surface, and the output air hole includes a side hole provided on the side wall.
Specifically, the outer peripheral edge of the top surface is provided with a plurality of top surface outer annular holes at intervals, and the central part of the top surface is provided with a plurality of top surface inner annular holes at intervals in the circumferential direction.
Further, a plurality of top surface outer annular holes are formed in the outer peripheral edge of the top surface at equal intervals, and a plurality of top surface inner annular holes are circumferentially formed in the center of the top surface at equal intervals.
Specifically, a plurality of side holes are formed in the side wall, the side holes may be arranged in order or in disorder, may be arranged along the circumferential direction of the side wall, or may be arranged longitudinally along the extending direction of the side wall, which is not limited herein.
Further, the side wall includes a first side wall 121 and a second side wall 122, and the cross section area of the first side wall is larger than that of the second side wall along the extending direction of the side wall, the outer wall of the first side wall is circumferentially provided with a plurality of first side holes 1211, and the outer wall of the second side wall is circumferentially provided with a plurality of second side holes 1221. Fig. 3 exemplarily shows a ring of first sidewall output holes of the first sidewall and a ring of second sidewall output holes of the second sidewall included in the side hole. The first sidewall output hole of the first sidewall may be a plurality of circles, and the second sidewall output hole of the second sidewall may also be a plurality of circles.
Further, the number of the air holes can be odd number or even number. The number of the gas holes is specifically set according to the actual application requirements, for example, the number of the gas holes is set according to the gas type, the spraying speed, the etching requirements (such as the etching area and the etching depth), and the like, and this embodiment does not specifically limit this.
Further, the pore diameter of each pore is equal.
Further, a non-porous area is arranged in the center of the top surface.
Specifically, a plurality of inner annular holes of the top surface are arranged in a surrounding mode to form a top surface center non-hole area. And a top surface edge non-porous area is formed between the top surface inner annular hole and the top surface outer annular hole.
In addition, it should be noted that the plurality of top surface inner ring holes may circumferentially surround to form a square top surface center imperforate area, or may circumferentially surround to form a circular imperforate area. Similarly, the edge of the top surface without holes can be arranged in a square or round shape. Fig. 3 illustrates the top central imperforate area and the top edge imperforate area arranged as a square, but not to be construed as limiting the invention, the top central imperforate area and the top edge imperforate area may be arranged as a triangle, trapezoid, star, etc. other shapes.
Preferably, the material of the body is plastic or metal. Of course, the material of the body can be made of other materials besides ceramics, plastics and metal materials.
It should be noted that, when the arrangement of the air holes is the third arrangement, the output air hole further includes an inner bottom ring hole disposed at the central portion of the bottom surface and an outer bottom ring hole disposed at the outer peripheral portion of the bottom surface. Specifically, the outer peripheral edge of the bottom surface is provided with a plurality of bottom surface outer annular holes at intervals, and the central part of the bottom surface is provided with a plurality of bottom surface inner annular holes at intervals in the circumferential direction.
Further, the position of the annular hole in the top surface corresponds to the position of the annular hole in the bottom surface. In this embodiment, a plurality of bottom surface inner annular holes are formed at positions of the bottom surface corresponding to the circumference formed by the top surface inner annular holes.
Preferably, the annular holes in the top surface and the annular holes in the bottom surface are in one-to-one correspondence, that is, the positions and the number of the annular holes in the top surface and the annular holes in the bottom surface are the same and are in one-to-one correspondence.
Likewise, the positions of the top surface outer ring holes and the bottom surface outer ring holes can be corresponding. In this embodiment, a plurality of bottom surface inner annular holes are formed at positions of the bottom surface corresponding to the circumference formed by the top surface inner annular holes. Of course, the positions of the top surface outer ring holes and the bottom surface outer ring holes may not correspond to each other.
Further, a non-porous area is arranged in the center of the bottom surface.
Specifically, a bottom surface central non-hole area is formed among the annular holes in the bottom surface. And a bottom surface edge non-hole area is formed between the bottom surface inner ring hole and the bottom surface outer ring hole.
It should be noted that the top surface outer ring hole, the top surface inner ring hole, the first side hole, the second side hole, the bottom surface inner ring hole, and the bottom surface outer ring hole may be one circle or multiple circles.
Example three:
as shown in fig. 4 to fig. 6, a wafer etching apparatus for etching a wafer according to an embodiment of the present invention is further provided, and specifically, the wafer etching apparatus includes a sealed cavity 400, in which a machine table 310 and a plasma supply apparatus mentioned in the foregoing embodiments are disposed.
The machine is used for placing a wafer 32, and the plasma supply device sprays reaction gas (also called plasma or plasma gas)) to the wafer on the machine. The reaction gas here may be chlorine, oxygen, nitrogen or hydrogen bromide.
The wafer etching device provided by the embodiment of the invention is applied to various improvements of wafer dust particles by utilizing a semiconductor machine, and by adopting the plasma supply device, the dust particles falling on the wafer in the wafer process are greatly reduced, even effectively avoided, the yield of the wafer output is improved, and the etching benefit is improved; in addition, compared with the traditional plasma supply device, the frequency of maintaining the cavity can be reduced, so that the work load of maintenance personnel is reduced, the extra cost generated by machine maintenance and the cost of replacing parts are saved, and the cost of manpower and material resources is reduced; meanwhile, in the wafer etching device in the embodiment of the invention, a user can observe the color and wavelength of the gas through the side surface without additionally arranging an observation window, namely, without laser interference Point (IEP) window parts, so that the cost of the window parts is reduced, the material cost can be further saved, and the etching cost is saved.
The wafer etching device provided by the embodiment of the invention has the same technical characteristics as the plasma supply device provided by the embodiment, so that the same technical problems can be solved, and the same technical effects can be achieved.
It is clear to those skilled in the art that, for convenience and brevity of description, the specific working process of the apparatus described above may refer to the corresponding process in the foregoing embodiments, and is not described herein again.
In all examples shown and described herein, any particular value should be construed as merely exemplary, and not as a limitation, and thus other examples of example embodiments may have different values.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In addition, in the description of the embodiments of the present invention, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Finally, it should be noted that: the above-mentioned embodiments are only specific embodiments of the present invention, which are used for illustrating the technical solutions of the present invention and not for limiting the same, and the protection scope of the present invention is not limited thereto, although the present invention is described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: any person skilled in the art can modify or easily conceive the technical solutions described in the foregoing embodiments or equivalent substitutes for some technical features within the technical scope of the present disclosure; such modifications, changes or substitutions do not depart from the spirit and scope of the embodiments of the present invention, and they should be construed as being included therein. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A plasma supply apparatus for installation in a wafer processing apparatus, the plasma supply apparatus comprising:
a reactive gas assembly and a gas sparger;
the reaction gas generated by the reaction gas assembly is sprayed through the gas sprayer;
the gas sparger comprises a body comprising a top surface, a bottom surface, and a sidewall, the top surface and the bottom surface being connected by the sidewall;
the body is provided with a plurality of gas pockets, the gas pocket is the through-hole, top surface center department is provided with the sclausura region, bottom surface center department is provided with the sclausura region, the gas pocket still includes interior annular ring, outer annular ring and side opening, interior annular ring forms to run through the top surface with the gas passage of bottom surface, outer annular ring with the side opening is linked together, forms the top surface with the gas passage and the formation of side opening the bottom surface with the gas passage of side opening.
2. The plasma supply apparatus according to claim 1, wherein the reaction gas assembly comprises a gas supply device, a delivery pipe and a gas concentrator connected in sequence;
the bottom end of the gas concentrator is connected to the top surface of the gas sparger.
3. The plasma supply apparatus of claim 1, wherein the plurality of gas holes comprises an inner annular ring concentric with the body.
4. The plasma supply apparatus according to claim 3, wherein the outer annular hole is concentric with the inner annular hole, the outer annular hole includes a top outer annular hole provided at an outer peripheral portion of the top surface and a bottom outer annular hole provided at an outer peripheral portion of the bottom surface, the top outer annular hole communicates with the bottom outer annular hole, and the top outer annular hole and the bottom outer annular hole communicate with the side holes, respectively.
5. The plasma supply apparatus of claim 2, wherein a flow valve is disposed on the delivery line.
6. The plasma supply apparatus of claim 1, wherein the body is of unitary construction.
7. The plasma supply apparatus of claim 1, wherein the body is made of ceramic.
8. The plasma supply apparatus of claim 1, wherein the top surface and the bottom surface are each circular, and the sidewall is circular in cross-section.
9. The plasma supply apparatus of claim 1, wherein the top surface and the bottom surface are each square, and the side wall has a square cross-section.
10. A wafer etching apparatus, comprising a sealed chamber, wherein a machine table and a plasma supply apparatus according to any one of claims 1 to 9 are arranged in the sealed chamber;
the machine station is used for placing wafers, and the plasma supply device is used for spraying reaction gas to the wafers on the machine station.
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| CN102054650A (en) * | 2009-10-28 | 2011-05-11 | 东京毅力科创株式会社 | Plasma processing apparatus |
| WO2011099205A1 (en) * | 2010-02-12 | 2011-08-18 | 富士電機ホールディングス株式会社 | Film formation device |
| CN102541102A (en) * | 2010-11-25 | 2012-07-04 | 东京毅力科创株式会社 | Processing apparatus |
| CN103403843A (en) * | 2011-03-04 | 2013-11-20 | 诺发系统公司 | Hybrid ceramic showerhead |
| CN103031543A (en) * | 2011-09-30 | 2013-04-10 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Top electrode and plasma processing equipment using top electrode |
| CN103068137A (en) * | 2012-11-21 | 2013-04-24 | 中国科学院微电子研究所 | Air inlet structure and plasma processing equipment |
| CN103839746A (en) * | 2012-11-26 | 2014-06-04 | 上海华虹宏力半导体制造有限公司 | Etching equipment process gas gas-feeding device |
| CN103903946A (en) * | 2012-12-26 | 2014-07-02 | 中微半导体设备(上海)有限公司 | Gas spray head used for plasma reactor |
| CN103993293A (en) * | 2013-02-15 | 2014-08-20 | 诺发系统公司 | Multi-chamber sprayer with temperature controller |
| CN105209964A (en) * | 2013-05-08 | 2015-12-30 | 周星工程股份有限公司 | Gas supply device |
| CN106935466A (en) * | 2015-12-30 | 2017-07-07 | 中微半导体设备(上海)有限公司 | Gas distributing system and plasma are dispelled photoetching adhesive dispenser and its method of gas distribution |
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