CN104233229A - Air inlet device and plasma processing equipment - Google Patents
Air inlet device and plasma processing equipment Download PDFInfo
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- CN104233229A CN104233229A CN201310253092.XA CN201310253092A CN104233229A CN 104233229 A CN104233229 A CN 104233229A CN 201310253092 A CN201310253092 A CN 201310253092A CN 104233229 A CN104233229 A CN 104233229A
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Abstract
The invention provides an air inlet device and plasma processing equipment. The air inlet device comprises an air inlet unit and an air source, wherein the air source supplies process gas into a reaction chamber by virtue of the air inlet unit; the air inlet unit comprises a central air inlet nozzle arranged at the top of the reaction chamber and an edge air inlet nozzle group arranged on the side wall of the reaction chamber, and the central air inlet nozzle is respectively communicated with the air source and the reaction chamber and used for spraying the process gas to a central area of the reaction chamber; and the edge air inlet nozzle group comprises at least two edge air inlet nozzles which are arranged along the circumferential direction of the reaction chamber and are independent of each other; the edge air inlet nozzle group is used for spraying the process gas to an edge area of the reaction chamber. By adopting the air inlet device provided by the invention, the flow of the process gas flowing towards the edge area of the reaction chamber can be further increased so as to ensure that distribution of the process gas in the edge area and the central area of the reaction chamber tends to be uniform, so that the process uniformity of the plasma processing equipment can be improved.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly, relate to a kind of diffuser and plasma processing device.
Background technology
Plasma processing device has been widely used in the manufacturing process of unicircuit (IC) and MEMS (micro electro mechanical system) (MEMS) etc., such as inductively coupled plasma (ICP) processing units, its ultimate principle is: the process gas in provocative reaction chamber forms plasma body, there is various physical and chemical reaction in active particle and the substrate surface of such as ion, electronics and the free radical etc. that contain in plasma body, thus realizes etching or deposit film substrate surface.
Fig. 1 is the structural representation of typical plasma processing device.As shown in Figure 1, plasma processing device comprises reaction chamber 10, diffuser, grid bias power supply 16 and end point determination device 17.Wherein, in reaction chamber 10, be provided with the electrostatic chuck 11 for carrier substrate 12, it is electrically connected with grid bias power supply 16; And, the radio-frequency power supply 15 being provided with coil 14 and being electrically connected with it above the roof of reaction chamber 10; Diffuser comprises admission piece 13 and the source of the gas (not shown) be communicated with it, and admission piece 13 is arranged on the top center of reaction chamber 10, in order to be sprayed in reaction chamber 10 by the process gas provided by source of the gas.In the process of carrying out technique, source of the gas provides process gas via admission piece 13 in reaction chamber 10; Connect radio-frequency power supply 15 and grid bias power supply 16, form plasma body with the process gas in provocative reaction chamber 10; The substrate 12 that grid bias power supply 16 is opposite on electrostatic chuck 11 loads bias voltage, etches substrate 12 surface to make the active particle in plasma body; After completing etching technics, observe the etching effect of the substrate 12 be placed in reaction chamber 10 by end point determination device 17.
In actual applications, the concrete structure of above-mentioned admission piece 13 as shown in Figure 2 A and 2 B, admission piece 13 comprises Vertical Channel 130, its upper end is communicated with source of the gas, and the gas injection portion be provided with in the lower end of Vertical Channel 130 containing multiple through hole 131, and the two ends of through hole 131 are communicated with reaction chamber 10 with Vertical Channel 130 respectively.In the process of carrying out technique, the process gas provided by source of the gas flows in reaction chamber 10 via Vertical Channel 130 and through hole 131.But, because above-mentioned through hole 131 is positioned at the central position of reaction chamber 10, and perpendicular to substrate 12 surface be placed on electrostatic chuck 11, the flow of the process gas that the flow of this process gas flowed in central zone via through hole 131 orientating reaction chamber 10 flows more than the fringe region of orientating reaction chamber 10, cause the process gas skewness in reaction chamber 10, thus cause the process uniformity of above-mentioned plasma processing device poor.
For this reason, people have employed the admission piece of another kind of structure, as shown in figs.3 a and 3b, the larger taper inlet mouth of lower ending opening 101 (inclination angle is α) is provided with in the central position of the roof of reaction chamber 10, admission piece 13 is arranged in inlet mouth 101, and its periphery wall forms with inlet mouth 101 annular space be communicated with the inside of reaction chamber 10; And admission piece 13 comprises Vertical Channel 130, Vertical Channel 130 comprises inlet end, central outlet side 131 and outlet side, edge 132, and wherein, inlet end is communicated with source of the gas; The cone structure (inclination angle is β) that central authorities outlet side 131 adopts lower ending opening larger, and be communicated with reaction chamber 10; Outlet side, edge 132 is communicated with above-mentioned annular space.In the process of carrying out technique, the process gas provided by source of the gas flows in Vertical Channel 130, and wherein a part of gas flows into the central zone of reaction chamber 10 via central outlet side 131; Wherein another part gas flows into the fringe region of reaction chamber 10 via outlet side, edge 132 and annular space.
Although above-mentioned admission piece 13 improves the distributing homogeneity of the process gas in reaction chamber 10 to a certain extent, but inevitably there is following problem in actual applications in it, that is: because above-mentioned admission piece 13 is still positioned at the central position of reaction chamber 10, this makes the raising limitation of the flow of the process gas of this admission piece 13 pairs of orientating reaction chamber 10 fringe region flowings, causes above-mentioned plasma processing device cannot meet technique process uniformity to high requirement.
Summary of the invention
The present invention is intended at least to solve one of technical problem existed in prior art, propose a kind of diffuser and plasma processing device, it can improve the flow of the process gas of orientating reaction cavity margin zone flows further, be tending towards even with the distribution of the process gas making reaction chamber fringe region and central zone, thus the process uniformity of plasma processing device can be improved.
Thering is provided a kind of diffuser for realizing object of the present invention, comprising air admission unit and source of the gas, described source of the gas provides process gas via described air admission unit to the inside of reaction chamber; Described air admission unit comprises the central air induction mouth being arranged on described reaction chamber top, and described central air induction mouth is communicated with reaction chamber with described source of the gas respectively, in order to the central zone ejection process gas to described reaction chamber; Described air admission unit also comprises the edge admission piece group on the sidewall being arranged on described reaction chamber, described edge admission piece group comprises the circumferential array along described reaction chamber, and be mutually independent at least two edge admission pieces, in order to the fringe region ejection process gas to described reaction chamber.
Wherein, the quantity of described edge admission piece group is one or more groups, and many groups described edge admission piece group is vertically spaced.
Wherein, often organizing in described edge admission piece group, described at least two edge admission pieces are along the circumferential symmetric offset spread of described reaction chamber; Or described at least two edge admission pieces are according to the circumference asymmetric arrangement of the asymmetric internal structure of described reaction chamber along described reaction chamber.
Wherein, described source of the gas comprises central source and edge source of the gas, and wherein, described central source provides process gas via described central air induction mouth to the central zone of described reaction chamber; Described edge source of the gas provides process gas via described edge admission piece group to the fringe region of described reaction chamber.
Wherein, the quantity of described edge source of the gas is one, and is connected with all edge admission pieces; Or the quantity of described edge source of the gas is multiple, and each described edge source of the gas with in all described edge admission pieces wherein at least one is connected.
Wherein, the quantity of described edge source of the gas is corresponding with the quantity of described edge admission piece, and the two connects correspondingly.
Wherein, each described edge admission piece comprises the induction trunk be communicated with reaction chamber with described source of the gas respectively, and the process gas provided by described source of the gas flows into the fringe region of described reaction chamber via described induction trunk.
Wherein, described induction trunk is the clear opening that two ends are communicated with reaction chamber with described source of the gas respectively, the axis of described clear opening and vertical direction at right angles, obtuse angle or acute angle; Further, the projection of shape of described clear opening on its cross section comprises circle, ellipse, trilateral or Polygons.
Wherein, described induction trunk comprises the intake section set gradually externally to inside from described reaction chamber and portion of giving vent to anger, and wherein, described intake section is first clear opening, and the outer end of described first clear opening is communicated with described source of the gas; The described portion of giving vent to anger comprises the second clear opening that multiple axis is parallel to each other, and distributes relative to the cross-sectional uniformity of described first clear opening; Further, the outer end of described multiple second clear opening is communicated with the inner of described first clear opening, and the inner of described multiple second clear opening is communicated with described reaction chamber.
Wherein, the axis of described first clear opening and vertical direction rectangular; And the axis of the axis of each the second clear opening and described first clear opening is parallel to each other, or in acute angle or obtuse angle.
Wherein, the projection of shape of each described second clear opening on its cross section comprises circle, ellipse, trilateral or Polygons.
As another technical scheme, the present invention also provides a kind of plasma processing device, it comprises reaction chamber and diffuser, and described diffuser is used for delivery technology gas in reaction chamber, and described diffuser have employed above-mentioned diffuser provided by the invention.
The present invention has following beneficial effect:
Diffuser provided by the invention, it by separately establishing edge admission piece group on the sidewall of reaction chamber, and comprise at least two edge admission pieces of the circumferential array along reaction chamber, can to the fringe region ejection process gas of reaction chamber, compared with this arranges admission piece with the central position only at reaction chamber in prior art, the flow of the process gas of orientating reaction cavity margin zone flows can be improved further, thus more effectively can improve the distributing homogeneity of the process gas of reaction chamber fringe region and central zone, and then the process uniformity of plasma processing device can be improved.
And, because each edge admission piece above-mentioned is mutually independent, this not only can make the process gas provided by source of the gas before flowing into reaction chamber via each edge admission piece, keep independent of one another and can not mutually mix, but also the kind and/or flow that can realize flowing into the process gas of reaction chamber different zones via each edge admission piece controls separately, thus the kind of process gas and/or the handiness of flow that regulate reaction chamber regional can be improved, and then the factor internal structure because of reaction chamber can being avoided asymmetric etc. and make the process gas skewness of reaction chamber different zones.
As another technical scheme of the present invention, the present invention also provides a kind of plasma processing device, it is by adopting above-mentioned diffuser provided by the invention, not only can improve the kind of process gas and/or the handiness of flow that regulate reaction chamber regional, but also more effectively can improve the distributing homogeneity of the process gas of reaction chamber fringe region and central zone, thus the process uniformity of plasma processing device can be improved.
Accompanying drawing explanation
Fig. 1 is the structural representation of typical plasma processing device;
Fig. 2 A is a kind of sectional view of admission piece;
Fig. 2 B is a kind of vertical view of admission piece;
Fig. 3 A is the sectional view of another kind of admission piece;
Fig. 3 B is the sectional view of the reaction chamber roof matched with admission piece in Fig. 3 A;
The sectional view of a kind of diffuser that Fig. 4 provides for first embodiment of the invention;
The sectional view of the another kind of diffuser that Fig. 5 provides for first embodiment of the invention;
Fig. 6 A is the sectional view of a kind of induction trunk of edge admission piece in Fig. 4;
Fig. 6 B is the sectional view of the another kind of induction trunk of edge admission piece in Fig. 4;
The part sectioned view of a kind of diffuser that Fig. 7 A provides for second embodiment of the invention;
Fig. 7 B be in Fig. 7 A edge admission piece along A to side-view; And
The part sectioned view of the another kind of diffuser that Fig. 8 provides for second embodiment of the invention.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, diffuser provided by the invention and plasma processing device are described in detail.
The sectional view of a kind of diffuser that Fig. 4 provides for first embodiment of the invention.Refer to Fig. 4, diffuser comprises air admission unit and source of the gas.Wherein, source of the gas comprises center source of the gas and edge source of the gas, air admission unit comprises central air induction mouth 24 and edge admission piece group 23, wherein, central air induction mouth 24 is arranged on reaction chamber 20 top, and be communicated with reaction chamber 20 with center source of the gas respectively, in order to the central zone ejection process gas to reaction chamber 20.In the present embodiment, central air induction mouth 24 is the clear opening formed on the roof of reaction chamber 20, but the present invention is not limited thereto, in actual applications, central air induction mouth 24 also can adopt the structure separate with reaction chamber 20, such as, two kinds of central air induction mouths as shown in Fig. 2 A and Fig. 3 A, certainly, the central air induction mouth of other arbitrary structures can also be adopted, as long as the central zone of the process gas orientating reaction chamber 20 provided by center source of the gas can be sprayed.
In the present embodiment, the quantity of edge admission piece group 23 is one group, and be arranged on the sidewall of reaction chamber 20, it comprises the circumferential array along reaction chamber 20, and be mutually independent two edge admission pieces (231,232), and, each edge admission piece comprises the induction trunk be communicated with reaction chamber 20 with edge source of the gas respectively, this induction trunk is the clear opening of the sidewall thickness running through reaction chamber 20 in the horizontal direction, and the two ends of this clear opening are communicated with reaction chamber 20 with edge source of the gas respectively.And, the quantity of edge source of the gas and edge admission piece (231,232) quantity is corresponding, and the two connects correspondingly, in the process of carrying out technique, the process gas provided by each edge source of the gas flows into the fringe region of reaction chamber 20 via the edge admission piece corresponded (231,232).
The diffuser that the present embodiment provides, it by separately establishing two edge admission pieces (231 of the circumferential array along reaction chamber on the sidewall of reaction chamber 20, 232), can to the fringe region ejection process gas of reaction chamber 20, compared with this arranges admission piece with the central position only at reaction chamber in prior art, the flow of the process gas of orientating reaction cavity margin zone flows can be improved further, thus more effectively can improve the distributing homogeneity of the process gas of reaction chamber fringe region and central zone, and then the process uniformity of plasma processing device can be improved.
And, due to above-mentioned edge admission piece (231, 232) be mutually independent, and the quantity of edge source of the gas and edge admission piece (231, 232) quantity is corresponding, and the two connects correspondingly, this not only can make the process gas provided by edge source of the gas before flowing into reaction chamber via each edge admission piece, keep independent of one another and can not mutually mix, but also the kind and/or flow that can realize flowing into the process gas of reaction chamber different zones via each edge admission piece controls separately, thus the kind of process gas and/or the handiness of flow that regulate reaction chamber regional can be improved, and then the factor internal structure because of reaction chamber can being avoided asymmetric etc. and make the process gas skewness of reaction chamber different zones.
It should be noted that, in the present embodiment, the quantity of edge admission piece group 23 is one group, but the present invention is not limited thereto, in actual applications, the quantity of edge admission piece group 23 can also set more than two according to specific needs, and edge admission piece group 23 more than two is vertically spaced, as shown in Figure 5.And often organizing in edge admission piece group 23, the quantity of edge admission piece is also not limited to two in the present embodiment, such as, as shown in Figure 5, the quantity of edge admission piece can also be two or more.
In addition, if the internal structure of reaction chamber 20 is symmetrical structure, then often organizing in edge admission piece group 13, plural edge admission piece can be made along the circumferential symmetric offset spread of described reaction chamber.If the internal structure of reaction chamber 20 is unsymmetrical structure, plural edge admission piece then can be made according to the circumference asymmetric arrangement of the asymmetric internal structure of described reaction chamber along described reaction chamber 20, this can make up that internal structure because of reaction chamber is asymmetric and gas field in the reaction chamber produced is uneven, thus can improve the process uniformity of plasma processing device further.
In addition, as shown in Figure 5, in actual applications, the quantity of edge source of the gas may also be only one, and is connected with all edge admission pieces; Or, can also be multiple, and each edge source of the gas with in all edge admission pieces wherein at least one is connected, that is, the quantity of edge source of the gas can also be less than or more than the quantity of all edge admission pieces, and an edge source of the gas can be made to be communicated with multiple edges admission piece, multiple edges source of the gas also can be made to be communicated with an edge admission piece.
Also it should be noted that, in the present embodiment, above-mentioned induction trunk is the clear opening that two ends are communicated with reaction chamber with described source of the gas respectively, and the axis of this clear opening and vertical direction rectangular, but the present invention is not limited thereto, in actual applications, can also make the axis of this clear opening and vertical direction in obtuse angle or acute angle, as shown in Figure 6 A and 6B.In addition, the projection of shape of clear opening on its cross section can comprise circle, ellipse, trilateral or Polygons.
It should be noted that further, in the present embodiment, the induction trunk of each edge admission piece adopts and processes with the integrated mode of sidewall of reaction chamber 20, namely, the sidewall of reaction chamber 20 directly offers clear opening, but the present invention is not limited thereto, in actual applications, also the induction trunk of edge admission piece can be made with separate at the sidewall of reaction chamber, namely, after respectively the sidewall of reaction chamber and edge admission piece being processed, again the two is assembled, this is conducive to edge admission piece and changes, thus use cost and the maintenance cost of plasma processing device can be reduced.
The part sectioned view of a kind of diffuser that Fig. 7 A provides for second embodiment of the invention.Fig. 7 B be in Fig. 7 A edge admission piece along A to side-view.See also Fig. 7 A and Fig. 7 B, the diffuser that the present embodiment provides is compared with above-mentioned first embodiment, and the difference of the two is only: the structure of edge admission piece is different.Particularly, in the present embodiment, the induction trunk of edge admission piece comprises the intake section 30 set gradually externally to inside of autoreaction chamber and portion 31 of giving vent to anger.Wherein, intake section 30 is first clear opening, and the outer end of this first clear opening is communicated with edge source of the gas; Portion 31 of giving vent to anger comprises the second clear opening that multiple axis is parallel to each other, and distributes relative to the cross-sectional uniformity of the first clear opening; Further, the outer end of multiple second clear opening is communicated with the inner of the first clear opening, and the inner of multiple second clear opening is communicated with reaction chamber.In the process of carrying out technique, the process gas provided by edge source of the gas enters in reaction chamber via the first clear opening and multiple second clear opening.By multiple second clear openings that the cross-sectional uniformity relative to the first clear opening distributes, the air-flow of the process gas flowing through it not only can be made to tend to be steady, but also the effect of current-sharing can be played, thus the distributing homogeneity of the process gas in reaction chamber can be improved further.
Other structure and functions of the diffuser provided due to the present embodiment there has been in the above-described first embodiment and describe in detail, do not repeat them here.
It should be noted that, in the present embodiment, axis and the vertical direction of the first clear opening are rectangular; And the axis of the axis of each the second clear opening and the first clear opening is parallel to each other, but the present invention is not limited thereto, in actual applications, also the axis of the first clear opening and vertical direction can be made to be acute angle or obtuse angle, and, the axis of the axis of each the second clear opening and the first clear opening is made to be acute angle or obtuse angle, as shown in Figure 8.
And the projection of shape of each second clear opening on its cross section can comprise the arbitrary shape of circle, ellipse, trilateral or Polygons etc.Similar with it, the projection of shape of the first clear opening on its cross section also can comprise the arbitrary shape of circle, ellipse, trilateral or Polygons etc.
As another technical scheme, the present embodiment also provides a kind of plasma processing device, and it comprises reaction chamber and diffuser, and this diffuser is used for delivery technology gas in reaction chamber, further, diffuser have employed the diffuser that each embodiment above-mentioned provides.
The plasma processing device that the present embodiment provides, its above-mentioned diffuser provided by adopting the present embodiment, not only can improve the kind of process gas and/or the handiness of flow that regulate reaction chamber regional, but also more effectively can improve the distributing homogeneity of the process gas of reaction chamber fringe region and central zone, thus the process uniformity of plasma processing device can be improved.
Be understandable that, the illustrative embodiments that above embodiment is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (12)
1. a diffuser, comprises air admission unit and source of the gas, and described source of the gas provides process gas via described air admission unit to the inside of reaction chamber; Described air admission unit comprises the central air induction mouth being arranged on described reaction chamber top, and described central air induction mouth is communicated with reaction chamber with described source of the gas respectively, in order to the central zone ejection process gas to described reaction chamber; It is characterized in that,
Described air admission unit also comprises the edge admission piece group on the sidewall being arranged on described reaction chamber, described edge admission piece group comprises the circumferential array along described reaction chamber, and be mutually independent at least two edge admission pieces, in order to the fringe region ejection process gas to described reaction chamber.
2. diffuser according to claim 1, is characterized in that, the quantity of described edge admission piece group is one or more groups, and many groups described edge admission piece group is vertically spaced.
3. diffuser according to claim 1 and 2, is characterized in that, often organizing in described edge admission piece group, described at least two edge admission pieces are along the circumferential symmetric offset spread of described reaction chamber; Or
Described at least two edge admission pieces are according to the circumference asymmetric arrangement of the asymmetric internal structure of described reaction chamber along described reaction chamber.
4. diffuser according to claim 1 and 2, is characterized in that, described source of the gas comprises central source and edge source of the gas, wherein
Described central source provides process gas via described central air induction mouth to the central zone of described reaction chamber;
Described edge source of the gas provides process gas via described edge admission piece group to the fringe region of described reaction chamber.
5. diffuser according to claim 4, is characterized in that, the quantity of described edge source of the gas is one, and is connected with all edge admission pieces; Or,
The quantity of described edge source of the gas is multiple, and each described edge source of the gas with in all described edge admission pieces wherein at least one is connected.
6. diffuser according to claim 5, is characterized in that, the quantity of described edge source of the gas is corresponding with the quantity of described edge admission piece, and the two connects correspondingly.
7. diffuser according to claim 1, it is characterized in that, each described edge admission piece comprises the induction trunk be communicated with reaction chamber with described source of the gas respectively, and the process gas provided by described source of the gas flows into the fringe region of described reaction chamber via described induction trunk.
8. diffuser according to claim 7, is characterized in that, described induction trunk is the clear opening that two ends are communicated with reaction chamber with described source of the gas respectively, the axis of described clear opening and vertical direction at right angles, obtuse angle or acute angle; Further,
The projection of shape of described clear opening on its cross section comprises circle, ellipse, trilateral or Polygons.
9. diffuser according to claim 7, is characterized in that, described induction trunk comprises the intake section set gradually externally to inside from described reaction chamber and portion of giving vent to anger, wherein
Described intake section is first clear opening, and the outer end of described first clear opening is communicated with described source of the gas;
The described portion of giving vent to anger comprises the second clear opening that multiple axis is parallel to each other, and distributes relative to the cross-sectional uniformity of described first clear opening; Further, the outer end of described multiple second clear opening is communicated with the inner of described first clear opening, and the inner of described multiple second clear opening is communicated with described reaction chamber.
10. diffuser according to claim 9, is characterized in that, axis and the vertical direction of described first clear opening are rectangular; And
The axis of each the second clear opening and the axis of described first clear opening are parallel to each other, or in acute angle or obtuse angle.
11. diffusers according to claim 9, is characterized in that, the projection of shape of each described second clear opening on its cross section comprises circle, ellipse, trilateral or Polygons.
12. 1 kinds of plasma processing devices, it comprises reaction chamber and diffuser, and described diffuser is used for delivery technology gas in reaction chamber, it is characterized in that, described diffuser adopts the diffuser in claim 1-11 described in any one.
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| CN201310253092.XA CN104233229A (en) | 2013-06-24 | 2013-06-24 | Air inlet device and plasma processing equipment |
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| CN201310253092.XA CN104233229A (en) | 2013-06-24 | 2013-06-24 | Air inlet device and plasma processing equipment |
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| WO2021233338A1 (en) * | 2020-05-21 | 2021-11-25 | 江苏鲁汶仪器有限公司 | Separated gas inlet structure for blocking plasma backflow |
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| CN116190282A (en) * | 2023-04-24 | 2023-05-30 | 无锡尚积半导体科技有限公司 | Etching device, method for detecting etching uniformity and method for uniformly etching wafer |
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| CN114855267A (en) * | 2022-07-05 | 2022-08-05 | 苏州长光华芯光电技术股份有限公司 | Wafer epitaxial growth system and wafer epitaxial growth method |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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Application publication date: 20141224 |
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