CN103068137A - Air inlet structure and plasma process equipment - Google Patents
Air inlet structure and plasma process equipment Download PDFInfo
- Publication number
- CN103068137A CN103068137A CN2012104772276A CN201210477227A CN103068137A CN 103068137 A CN103068137 A CN 103068137A CN 2012104772276 A CN2012104772276 A CN 2012104772276A CN 201210477227 A CN201210477227 A CN 201210477227A CN 103068137 A CN103068137 A CN 103068137A
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- Prior art keywords
- inflator
- air intake
- stack shell
- air inlet
- intake structure
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- 238000000034 method Methods 0.000 title abstract description 7
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 18
- 239000010935 stainless steel Substances 0.000 claims abstract description 18
- 239000011148 porous material Substances 0.000 claims description 18
- 239000011810 insulating material Substances 0.000 claims description 12
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000005672 electromagnetic field Effects 0.000 abstract description 4
- 230000000740 bleeding effect Effects 0.000 abstract 1
- 239000007858 starting material Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Plasma Technology (AREA)
Abstract
The invention relates to the technical field of plasma process equipment, in particular to an air inlet structure. The air inlet structure comprises a stainless steel air inlet pipe and a cylindrical air homogenizing cylinder arranged below the stainless steel air inlet pipe, the air homogenizing cylinder comprises a cylinder body and a step structure arranged at the upper end of the cylinder body, the lower end of the air homogenizing cylinder is closed, and a plurality of air homogenizing holes are uniformly distributed on the cylinder body of the air homogenizing cylinder. The invention also provides plasma processing equipment. The invention can reduce or avoid the phenomenon of uneven plasma glow starting or local ignition caused by asymmetric structure; the gas inlet structure avoids the range of plasma glow starting, does not influence the distribution of an electromagnetic field, and can improve the uniformity and stability of the plasma; in addition, under the plasma starting condition, the air inlet structure of the invention has no air bleeding phenomenon, and can keep the requirement of the vacuum chamber on the vacuum degree.
Description
Technical field
The present invention relates to the plasma processing tool technical field, be specifically related to a kind of air intake structure and plasma processing tool.
Background technology
In plasma processing tool, used air intake structure has various ways, and air intake structure form reasonable in design has important effect for the uniformity of plasma process and stability.Stainless steel metal pipe air intake structure is common air intake structure in the techniques such as plasma etching, deposition, produce easily electric short circuit, cause plasma to extinguish or the phenomenon such as partial structurtes sparking occurs, and the field symmetry of this structural physical feature is poor, produce easily the physical field of circular wave, for example flow field, thermal field or electromagnetic field etc., thus uniformity and the reliability of plasma process affected.
Summary of the invention
The object of the present invention is to provide a kind of air intake structure, improve uniformity and the stability of plasma process.
Another object of the present invention is to provide a kind of plasma processing tool.
In order to achieve the above object, the technical solution used in the present invention is as follows:
A kind of air intake structure, comprise the stainless steel air inlet pipe and be arranged on the columniform even inflator of described stainless steel air inlet pipe below, described even inflator comprises stack shell and is arranged on the ledge structure of described stack shell upper end, described even inflator lower end is for what seal, and some even pores evenly distribute on the stack shell of described even inflator.
In the such scheme, the internal diameter of described even inflator is 5~980mm, and the external diameter of the stack shell of described even inflator is 8~1000mm, and the external diameter of described ledge structure is 10~1200mm, and the external diameter of described ledge structure is greater than the external diameter of the stack shell of described even inflator; The height of described even inflator is 10~1000mm, and wherein, the height of described ledge structure is 5~500mm.
In the such scheme, described even inflator is made by insulating material, and described insulating material is polytetrafluoro, pottery, Merlon or quartz.
In the such scheme, the temperature resistant range of described even inflator is-300~3000 ℃.
In the such scheme, 2~1000000 even pores evenly distribute on the stack shell of described even inflator.
In the such scheme, the even pore of 1~10000 row evenly distributes on the stack shell of described even inflator.
In the such scheme, the diameter of described even pore is 0.05~100mm.
A kind of plasma processing tool comprises chamber and air intake structure, and described air intake structure is arranged on the upper end of described chamber; Described air intake structure comprises that the stainless steel air inlet pipe reaches and the columniform even inflator that is arranged on described stainless steel air inlet pipe below, described even inflator comprises stack shell and is arranged on the ledge structure of described stack shell upper end, described even inflator lower end is for what seal, and some even pores evenly distribute on the stack shell of described even inflator; Be covered with stepped hole on the described chamber, described stepped hole matches with the ledge structure of described even inflator upper end.
In the such scheme, the loam cake flange connect of described stainless steel air inlet pipe and described chamber, described flange connect adopts seal with elastometic washer or edge of a knife flange connect.
In the such scheme, described even inflator is made by insulating material, and described insulating material is polytetrafluoro, pottery, Merlon or quartz.
Compared with prior art, the invention has the beneficial effects as follows:
Air intake structure provided by the invention is applied to plasma processing tool, can reduce or avoid because structure is asymmetric, the appearance of the inhomogeneous or local spark phenomenon of the plasma starter that causes; Because air intake structure of the present invention has been avoided the scope of plasma starter, can the distribution of electromagnetic field not impacted, and can improve uniformity and the stability of plasma; And under plasma starter condition, air intake structure of the present invention does not have phenomenon of deflation, can keep vacuum chamber to the requirement of vacuum degree.
Description of drawings
The structural representation of the air intake structure that Fig. 1 provides for the embodiment of the invention;
The structural representation of the plasma processing tool that Fig. 2 provides for the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing principle of the present invention and feature are described, institute gives an actual example and only is used for explaining the present invention, is not be used to limiting scope of the present invention.
As shown in Figure 1, present embodiment provides a kind of air intake structure, comprise stainless steel air inlet pipe 1 and be arranged on the columniform even inflator 2 of stainless steel air inlet pipe 1 below, even inflator 2 comprises stack shell 21 and is arranged on the ledge structure 22 of stack shell 21 upper ends, even inflator 2 lower ends are sealing, even 1~10000 row, 2~1000000 even pores 23 of distributing on the stack shell 21 of even inflator 2, the diameter of even pore 23 is 0.05~100mm.Even inflator 2 is made by insulating material, and insulating material is polytetrafluoro, pottery, Merlon or quartz.The temperature resistant range of the material of even inflator 2 is-300~3000 ℃.
The internal diameter of even inflator 2 is 5~980mm, and the external diameter of the stack shell 21 of even inflator 2 is 8~1000mm, and the external diameter of ledge structure 22 is 10~1200mm, and the external diameter of ledge structure 22 is greater than the external diameter of the stack shell 21 of even inflator 2; The height of even inflator 2 is 10~1000mm, and wherein, the height of ledge structure 22 is 5~500mm.
Particularly, in the present embodiment, 2 row totally 24 the even pores that evenly distribute on the stack shell of even inflator, the diameter of even pore is 2mm.
As shown in Figure 2, present embodiment provides a kind of plasma processing tool, comprises chamber 4 and air intake structure, and air intake structure is arranged on the upper end of chamber 4.Plasma 5, chip 6 and slide holder 7 are arranged in the chamber 4, and chamber 4 lower ends are provided with exhaust outlet 8.Air intake structure comprises that stainless steel air inlet pipe 1 reaches and the columniform even inflator 2 that is arranged on stainless steel air inlet pipe 1 below, loam cake 3 flange connects of stainless steel air inlet pipe 1 and chamber 4, flange connect adopts seal with elastometic washer or edge of a knife flange connect, can avoid occurring the plasma nonuniformity phenomenon.Even inflator 2 comprises stack shell 21 and is arranged on the ledge structure 22 of stack shell 21 upper ends that even inflator 2 lower ends are what seal.The loam cake 3 of chamber 4 is provided with stepped hole 31, and stepped hole 31 matches with the ledge structure 22 of even inflator 2 upper ends.Even 1~10000 row, 2~1000000 even pores 23 of distributing on the stack shell 21 of even inflator 2, the diameter of even pore 23 is 0.05~100mm.Even inflator 2 is made by insulating material, and insulating material is polytetrafluoro, pottery, Merlon or quartz.The temperature resistant range of the material of even inflator 2 is-300~3000 ℃.
The internal diameter of even inflator 2 is 5~980mm, and the external diameter of the stack shell 21 of even inflator 2 is 8~1000mm, and the external diameter of ledge structure 22 is 10~1000mm, and the external diameter of ledge structure 22 is greater than the external diameter of the stack shell 21 of even inflator 2; The height of even inflator 2 is 10~1000mm, and wherein, the height of ledge structure 22 is 5~500mm.
Particularly, in the present embodiment, 2 row totally 24 the even pores that evenly distribute on the stack shell of even inflator, the diameter of even pore is 2mm.
Among the present invention, even inflator 2 is fixedly connected on the stepped hole 31 of loam cake 3 of chamber 4, has avoided the scope of plasma starter, and the material selection of even inflator 2 is nonmetal, can the distribution of electromagnetic field not impacted.Therefore, use air intake structure provided by the invention can improve uniformity and the stability of plasma, thereby improved the technological effect of the chip of processing 6 on 5 pairs of slide holders 7 of plasma.
Air intake structure of the present invention can reduce or avoid because the air-flow skewness, the appearance of the inhomogeneous or local spark phenomenon of the plasma starter that causes; Under plasma starter condition, air intake structure of the present invention does not have phenomenon of deflation, can keep vacuum chamber to the requirement of vacuum degree; Inner at electric field, keep the symmetry of the physical structure of air intake structure, thereby make its physical characteristic keep the airflow field symmetry, thereby Effective Raise uniformity and the stability of plasma process.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. air intake structure, it is characterized in that: comprise the stainless steel air inlet pipe and be arranged on the columniform even inflator of described stainless steel air inlet pipe below, described even inflator comprises stack shell and is arranged on the ledge structure of described stack shell upper end, described even inflator lower end is for what seal, and some even pores evenly distribute on the stack shell of described even inflator.
2. air intake structure as claimed in claim 1, it is characterized in that: the internal diameter of described even inflator is 5~980mm, the external diameter of the stack shell of described even inflator is 8~1000mm, and the external diameter of described ledge structure is 10~1200mm, and the external diameter of described ledge structure is greater than the external diameter of the stack shell of described even inflator; The height of described even inflator is 10~1000mm, and wherein, the height of described ledge structure is 5~500mm.
3. air intake structure as claimed in claim 1, it is characterized in that: described even inflator is made by insulating material, and described insulating material is polytetrafluoro, pottery, Merlon or quartz.
4. air intake structure as claimed in claim 1, it is characterized in that: the temperature resistant range of described even inflator is-300~3000 ℃.
5. air intake structure as claimed in claim 1 is characterized in that: even 2~1000000 even pores that distribute on the stack shell of described even inflator.
6. air intake structure as claimed in claim 1 is characterized in that: the even pore of even 1~10000 row that distributes on the stack shell of described even inflator.
7. air intake structure as claimed in claim 1, it is characterized in that: the diameter of described even pore is 0.05~100mm.
8. a plasma processing tool comprises chamber and air intake structure, it is characterized in that: described air intake structure is arranged on the upper end of described chamber; Described air intake structure comprises that the stainless steel air inlet pipe reaches and the columniform even inflator that is arranged on described stainless steel air inlet pipe below, described even inflator comprises stack shell and is arranged on the ledge structure of described stack shell upper end, described even inflator lower end is for what seal, and some even pores evenly distribute on the stack shell of described even inflator; Be covered with stepped hole on the described chamber, described stepped hole matches with the ledge structure of described even inflator upper end.
9. plasma processing tool as claimed in claim 8 is characterized in that: the loam cake flange connect of described stainless steel air inlet pipe and described chamber, described flange connect employing seal with elastometic washer or edge of a knife flange connect.
10. plasma processing tool as claimed in claim 8, it is characterized in that: described even inflator is made by insulating material, and described insulating material is polytetrafluoro, pottery, Merlon or quartz.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2012104772276A CN103068137A (en) | 2012-11-21 | 2012-11-21 | Air inlet structure and plasma process equipment |
PCT/CN2012/086932 WO2014079119A1 (en) | 2012-11-21 | 2012-12-19 | Air intake structure and plasma process apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2012104772276A CN103068137A (en) | 2012-11-21 | 2012-11-21 | Air inlet structure and plasma process equipment |
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CN103068137A true CN103068137A (en) | 2013-04-24 |
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CN2012104772276A Pending CN103068137A (en) | 2012-11-21 | 2012-11-21 | Air inlet structure and plasma process equipment |
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CN (1) | CN103068137A (en) |
WO (1) | WO2014079119A1 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105702600A (en) * | 2014-11-28 | 2016-06-22 | 中国科学院微电子研究所 | Air inlet device of semiconductor equipment |
CN107112189A (en) * | 2014-12-30 | 2017-08-29 | 应用材料公司 | High conduction handles accessory |
CN109817505A (en) * | 2017-11-20 | 2019-05-28 | 长鑫存储技术有限公司 | Plasma feeding mechanism and wafer etching device |
CN114113922A (en) * | 2020-11-25 | 2022-03-01 | 核工业理化工程研究院 | Dynamically adjustable vacuum ignition air inlet device and adjusting method thereof |
CN115040958A (en) * | 2022-07-14 | 2022-09-13 | 四川汇利实业有限公司 | Workshop oil smoke processing apparatus |
Citations (3)
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US20070187363A1 (en) * | 2006-02-13 | 2007-08-16 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
CN101527258A (en) * | 2008-03-06 | 2009-09-09 | 东京毅力科创株式会社 | Cover part, process gas diffusing and supplying unit, and substrate processing apparatus |
CN102420120A (en) * | 2011-11-04 | 2012-04-18 | 中国科学院微电子研究所 | Air inlet structure |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US20030070620A1 (en) * | 2001-10-15 | 2003-04-17 | Cooperberg David J. | Tunable multi-zone gas injection system |
KR100561848B1 (en) * | 2003-11-04 | 2006-03-16 | 삼성전자주식회사 | Helical resonator type plasma processing apparatus |
KR100854995B1 (en) * | 2005-03-02 | 2008-08-28 | 삼성전자주식회사 | High density plasma chemical vapor deposition apparatus |
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2012
- 2012-11-21 CN CN2012104772276A patent/CN103068137A/en active Pending
- 2012-12-19 WO PCT/CN2012/086932 patent/WO2014079119A1/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US20070187363A1 (en) * | 2006-02-13 | 2007-08-16 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
CN101527258A (en) * | 2008-03-06 | 2009-09-09 | 东京毅力科创株式会社 | Cover part, process gas diffusing and supplying unit, and substrate processing apparatus |
CN102420120A (en) * | 2011-11-04 | 2012-04-18 | 中国科学院微电子研究所 | Air inlet structure |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105702600A (en) * | 2014-11-28 | 2016-06-22 | 中国科学院微电子研究所 | Air inlet device of semiconductor equipment |
CN107112189A (en) * | 2014-12-30 | 2017-08-29 | 应用材料公司 | High conduction handles accessory |
TWI677899B (en) * | 2014-12-30 | 2019-11-21 | 美商應用材料股份有限公司 | High conductance process kit |
US10763086B2 (en) | 2014-12-30 | 2020-09-01 | Applied Materials, Inc. | High conductance process kit |
TWI725569B (en) * | 2014-12-30 | 2021-04-21 | 美商應用材料股份有限公司 | High conductance process kit |
CN109817505A (en) * | 2017-11-20 | 2019-05-28 | 长鑫存储技术有限公司 | Plasma feeding mechanism and wafer etching device |
CN109817505B (en) * | 2017-11-20 | 2021-09-24 | 长鑫存储技术有限公司 | Plasma supply device and wafer etching device |
CN114113922A (en) * | 2020-11-25 | 2022-03-01 | 核工业理化工程研究院 | Dynamically adjustable vacuum ignition air inlet device and adjusting method thereof |
CN115040958A (en) * | 2022-07-14 | 2022-09-13 | 四川汇利实业有限公司 | Workshop oil smoke processing apparatus |
CN115040958B (en) * | 2022-07-14 | 2024-06-04 | 四川汇利实业有限公司 | Workshop oil smoke processing apparatus |
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Publication number | Publication date |
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WO2014079119A1 (en) | 2014-05-30 |
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Application publication date: 20130424 |