CN105702600A - Semiconductor device gas inlet device - Google Patents

Semiconductor device gas inlet device Download PDF

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Publication number
CN105702600A
CN105702600A CN201410709744.0A CN201410709744A CN105702600A CN 105702600 A CN105702600 A CN 105702600A CN 201410709744 A CN201410709744 A CN 201410709744A CN 105702600 A CN105702600 A CN 105702600A
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CN
China
Prior art keywords
nut
gas
reaction chamber
even gas
air intake
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410709744.0A
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Chinese (zh)
Inventor
胡冬冬
郜晨希
李超波
夏洋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institute of Microelectronics of CAS
Original Assignee
Institute of Microelectronics of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institute of Microelectronics of CAS filed Critical Institute of Microelectronics of CAS
Priority to CN201410709744.0A priority Critical patent/CN105702600A/en
Publication of CN105702600A publication Critical patent/CN105702600A/en
Pending legal-status Critical Current

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Abstract

The present invention relates to the technical field of semiconductor etchers and injection machine systems and particularly relates to a semiconductor device gas inlet device which is used for transporting reaction gas to a reaction chamber, The gas inlet device comprises a bend head whose one end communicates with the gas source which provides the reaction gas, a plate-through ventilation member which goes through the quartz plate of the reaction chamber, a gas inlet flange which is between the bend head and the plate-through ventilation member, a gas homogenizing nut which is connected to one end of the plate-through ventilation member in the reaction chamber, wherein one end of the plate-through ventilation member outside the reaction chamber communicates with the other end of the bend head. According to the gas inlet device provided by the invention, the reaction gas which enters into the reaction chamber can be uniformly distributed, and the surface processing result of a semiconductor device is improved.

Description

A kind of semiconductor equipment air intake installation
Technical field
The present invention relates to semiconductor etching machine, implanter system technical field, particularly relate to a kind of semiconductor equipment air intake installation。
Background technology
The widely used plasma technology of etching in semiconductor technology, to silicon chip。So-called plasma etching technology refers to the material removing in integrated circuit small-medium size figure with low pressure plasma electric discharge。
Generally, in plasma etch process, reacting gas enters into reaction chamber by the air intake installation being arranged on etching machine, and under the exciting of radio-frequency power, formation plasma and silicon chip react。And the quality etched is heavily dependent on the uniformity of the gas distribution entering cavity。Accordingly it is desirable to control to enter the distribution of gas to chamber by changing air intake installation, thus improving etch rate and etching homogeneity。
Prior art mainly has the even gas in top, the even gas in bottom and ring side three kinds of structures of even gas。The even gas simple in construction in traditional top, but even gas is uneven, and intermediate effect is serious;Bottom some gas of even gas has not enough time to reaction and is just pumped, and causes waste;The even gas in ring side is respond well, but structure is complicated, and cost is high。
Summary of the invention
The embodiment of the present invention provides a kind of semiconductor equipment air intake installation, it is possible to makes the gas in entrance reaction chamber uniform, and arrives processed silicon chip surface uniformly, improves the processed result to semiconductor device。
In order to achieve the above object, the technical solution used in the present invention is as follows:
A kind of semiconductor equipment air intake installation, for reacting gas is delivered to reaction chamber, described air intake installation includes:
Elbow, one end of described elbow is connected with the source of the gas providing described reacting gas;
Threading ventilation part, described threading ventilation part is through the quartz disk of described reaction chamber, and one end that described threading ventilation part is positioned at outside described reaction chamber is connected with the other end of described elbow;
Inlet flange, described inlet flange is between described elbow and described threading ventilation part;
Even gas nut, one end that described even gas nut is positioned at described reaction chamber with described threading ventilation part is connected。
Further, described elbow, described inlet flange and described threading ventilation part connect by clamp nut is fixing。
Further, described even gas nut is annular, the bottom even of described even gas nut is distributed several the first passages, and the bottom of the ring side of described even gas nut is uniformly distributed some to the second passage, and the hole count of described second passage is the twice of the hole count of described first passage。
Further, the ring side of described even gas nut is provided with groove between adjacent every pair described second passage。
Further, the bottom of described even gas nut is spherical, and the bottom even of described even gas nut is distributed some 3rd passages。
Further, the bottom of described even gas nut is symmetric polygonal, and the bottom even of described even gas nut is distributed some 4th passages。
What technical scheme produced has the beneficial effect that:
Air intake installation provided by the invention can make the reacting gas in entrance reaction chamber be evenly distributed, and improves semiconductor device surface processed result。
Accompanying drawing explanation
The structural representation of a kind of semiconductor equipment air intake installation that Fig. 1 provides for the embodiment of the present invention;
Fig. 2 is the structural representation of a kind of even gas nut in the embodiment of the present invention;
Fig. 3 is the structural representation of another kind of even gas nut in the embodiment of the present invention;
Fig. 4 is the structural representation of another even gas nut in the embodiment of the present invention。
Detailed description of the invention
For making the purpose of the application one embodiment, technical scheme and advantage clearly, below in conjunction with the accompanying drawing in the embodiment of the present application, technical scheme in the embodiment of the present application is clearly and completely described, obviously, described embodiment is some embodiments of the present application, rather than whole embodiments。Based on the embodiment in the application, the every other embodiment that those of ordinary skill in the art obtain under not making creative work premise, broadly fall into the scope of protection of the invention。
As it is shown in figure 1, the embodiment of the present invention provides a kind of semiconductor equipment air intake installation, for reacting gas is delivered to reaction chamber, described air intake installation includes: elbow 1, threading ventilation part 4, inlet flange 3 and even gas nut 6。Wherein, one end of described elbow 1 is connected with the source of the gas providing described reacting gas;Described threading ventilation part 4 is through the quartz disk 5 of described reaction chamber, and one end that described threading ventilation part 4 is positioned at outside described reaction chamber is connected with the other end of described elbow 1;Described inlet flange 3 is between described elbow 1 and described threading ventilation part 4;One end that described even gas nut 6 is positioned at described reaction chamber with described threading ventilation part 4 is connected。Described elbow 1, described inlet flange and described threading ventilation part 4 connect by clamp nut 2 is fixing。
As shown in Figure 2, even gas nut 6 in the present embodiment is annular, the bottom even of described even gas nut 6 is distributed several the first passages 61, the bottom of the ring side of described even gas nut 6 is uniformly distributed some to the second passage 62, the hole count of described second passage 62 is the twice of the hole count of described first passage 61, so can effectively reduce intermediate effect so that be minimized with periphery uniformity difference in the middle of the wafer in reaction chamber。Preferably, the quantity of the first passage is 6, and the quantity of the second passage is 12, i.e. 6 pairs of the second passages。
Further, the ring side of described even gas nut 6 is provided with groove 63 between adjacent every pair described second passage 62, contributes to even gas nut 6 is arranged on threading ventilation part 4 lower end。
As it is shown on figure 3, the bottom of the even gas nut 6 in the present embodiment is spherical, the bottom even of described even gas nut 6 is distributed some 3rd passages 64, and gas can be uniformly entered in reaction chamber from all directions by even gas nut 6。
As shown in Figure 4, the bottom of the even gas nut 6 in the present embodiment is symmetric polygonal, the bottom even of described even gas nut 6 is distributed some 4th passages 65, gas can be uniformly entered in reaction chamber from all directions by even gas nut 6, and the even gas nut with symmetric polygonal structure is easily worked。
The advantage of the embodiment of the present invention is as follows:
Air intake installation provided by the invention is owing to have employed even gas nut so that the reacting gas entered in reaction chamber is evenly distributed, and improves semiconductor device surface processed result。
Obviously, the present invention can be carried out various change and modification without deviating from the spirit and scope of the present invention by those skilled in the art。So, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification。

Claims (6)

1. a semiconductor equipment air intake installation, for reacting gas is delivered to reaction chamber, it is characterised in that described air intake installation includes:
Elbow, one end of described elbow is connected with the source of the gas providing described reacting gas;
Threading ventilation part, described threading ventilation part is through the quartz disk of described reaction chamber, and one end that described threading ventilation part is positioned at outside described reaction chamber is connected with the other end of described elbow;
Inlet flange, described inlet flange is between described elbow and described threading ventilation part;
Even gas nut, one end that described even gas nut is positioned at described reaction chamber with described threading ventilation part is connected。
2. semiconductor equipment air intake installation as claimed in claim 1, it is characterised in that described elbow, described inlet flange and described threading ventilation part connect by clamp nut is fixing。
3. semiconductor equipment air intake installation as claimed in claim 1, it is characterized in that, described even gas nut is annular, the bottom even of described even gas nut is distributed several the first passages, the bottom of the ring side of described even gas nut is uniformly distributed some to the second passage, and the hole count of described second passage is the twice of the hole count of described first passage。
4. semiconductor equipment air intake installation as claimed in claim 3, it is characterised in that the ring side of described even gas nut is provided with groove between adjacent every pair described second passage。
5. semiconductor equipment air intake installation as claimed in claim 1, it is characterised in that the bottom of described even gas nut is spherical, and the bottom even of described even gas nut is distributed some 3rd passages。
6. semiconductor equipment air intake installation as claimed in claim 1, it is characterised in that the bottom of described even gas nut is symmetric polygonal, and the bottom even of described even gas nut is distributed some 4th passages。
CN201410709744.0A 2014-11-28 2014-11-28 Semiconductor device gas inlet device Pending CN105702600A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410709744.0A CN105702600A (en) 2014-11-28 2014-11-28 Semiconductor device gas inlet device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410709744.0A CN105702600A (en) 2014-11-28 2014-11-28 Semiconductor device gas inlet device

Publications (1)

Publication Number Publication Date
CN105702600A true CN105702600A (en) 2016-06-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410709744.0A Pending CN105702600A (en) 2014-11-28 2014-11-28 Semiconductor device gas inlet device

Country Status (1)

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CN (1) CN105702600A (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1850350A (en) * 2005-12-07 2006-10-25 北京北方微电子基地设备工艺研究中心有限责任公司 Air-intaking device for increasing intake evenness
CN102087957A (en) * 2009-12-03 2011-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 Method for controlling air inlet way in plasma processing technology
CN102162099A (en) * 2010-02-23 2011-08-24 显示器生产服务株式会社 Gas injection system for etching profile control
CN102420120A (en) * 2011-11-04 2012-04-18 中国科学院微电子研究所 Air intake structure
CN103068137A (en) * 2012-11-21 2013-04-24 中国科学院微电子研究所 Air inlet structure and plasma processing equipment
CN103137521A (en) * 2011-12-02 2013-06-05 中国科学院微电子研究所 Air inlet device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1850350A (en) * 2005-12-07 2006-10-25 北京北方微电子基地设备工艺研究中心有限责任公司 Air-intaking device for increasing intake evenness
CN102087957A (en) * 2009-12-03 2011-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 Method for controlling air inlet way in plasma processing technology
CN102162099A (en) * 2010-02-23 2011-08-24 显示器生产服务株式会社 Gas injection system for etching profile control
CN102420120A (en) * 2011-11-04 2012-04-18 中国科学院微电子研究所 Air intake structure
CN103137521A (en) * 2011-12-02 2013-06-05 中国科学院微电子研究所 Air inlet device
CN103068137A (en) * 2012-11-21 2013-04-24 中国科学院微电子研究所 Air inlet structure and plasma processing equipment

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Application publication date: 20160622