CN103208440B - Chamber heater - Google Patents
Chamber heater Download PDFInfo
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- CN103208440B CN103208440B CN201210014888.5A CN201210014888A CN103208440B CN 103208440 B CN103208440 B CN 103208440B CN 201210014888 A CN201210014888 A CN 201210014888A CN 103208440 B CN103208440 B CN 103208440B
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- heater coil
- inner lining
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- cavity inner
- heater
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Abstract
Disclose a kind of chamber heater, comprising: chamber wall heating arrangement and/or slide holder heating arrangement; Described chamber wall heating arrangement is arranged on the inwall of reaction chamber; Described slide holder heating arrangement is arranged on bottom slide holder.A kind of chamber heater provided by the invention, the appearance of the non-uniform phenomenon that such as can reduce or avoid plasma starter to cause because structure is asymmetric in plasma etch process; Under plasma starter condition, electrode fixing structure of the present invention does not have phenomenon of deflation, and vacuum chamber can be kept the requirement of vacuum degree.
Description
Technical field
The present invention relates to semiconductor process techniques field, particularly a kind of heater and chamber heater.
Background technology
Heating used in semiconductor technology has various ways, select rationally reliable heater, for the temperature homogeneity improving slide holder chip, remove processing contaminants, reduce byproduct of reaction and have very important impact, the reliability and stability for semiconductor technology have important effect.
Such as in plasma etch process chips non-uniform temperature, the speed of surface etch is inconsistent, easily occurs that surface topography is uneven, easily produces plasma local non-uniform phenomenon, make the fluctuation in chip circumference thermal field, flow field, thus affect uniformity and the reliability of plasma process.
Summary of the invention
The object of the present invention is to provide a kind of chamber heater that can improve the reliability and stability of semiconductor technology.
A kind of chamber heater provided by the invention, comprising:
Chamber wall heating arrangement and/or slide holder heating arrangement;
Described chamber wall heating arrangement is arranged on the inwall of reaction chamber;
Described slide holder heating arrangement is arranged on bottom slide holder.
Further, described chamber heater, described chamber wall heating arrangement comprises:
First heater coil, extraction electrode and be provided with the cavity inner lining cover of cavity;
Described cavity inner lining cover is the cylinder of a hollow, and described cavity inner lining cover is arranged on the inwall of reaction chamber;
Described cavity is arranged on described cavity inner lining and overlaps between inside and outside wall;
Described first heater coil in the shape of a spiral, is arranged on described cavity inside.
Further, the number of turns of described first heater coil is 2 ~ 200 circles, and the caliber of described first heater coil is 1 ~ 200mm, and diameter range is 10 ~ 10000mm, and helix pitch is 1 ~ 1000mm;
The tube wall of described first heater coil is 0.5 ~ 10mm to the distance of cavity inner lining jacket wall;
Distance between described cavity inner lining cover outer wall and reaction chamber inwall is 1 ~ 20mm;
Described cavity inner lining overlaps inside and outside wall thickness and is 0.5 ~ 30mm;
The diameter of described cavity inner lining cover inwall is 100 ~ 5000mm;
Described extraction electrode voltage Vt is 5V ~ 2000V, and heating power Pt is 1 ~ 10000W.
Further, described chamber heater, described slide holder heating arrangement comprises:
Second heater coil and extraction electrode; Described second heater coil is snail shape, is connected with described extraction electrode.
Further, the number of turns of described second heater coil is 1 ~ 50 circle, and described second heater coil caliber is 0.5 ~ 100mm, and diameter range is 10 ~ 5000mm, and helix pitch is 1 ~ 1000mm;
Described extraction electrode voltage Vs is 5V ~ 2000V, and heating power is 1W ~ 5000W.
Further, the temperature of described heating slide holder and cavity inner lining cover is 20 ~ 2000 DEG C.
Further, described first heater coil and the second heater coil are built-in metal silk heating tube, infrared heating pipe, ceramic heating pipe or graphite heating dish.
Further, the insulating material of described first heater coil and the second heater coil outside comprises pottery, quartz or Merlon.
Further, described cavity inner lining cover adopts anodized aluminum alloy, SiC, molybdenum, graphite material to make;
Described extraction electrode comprises copper, graphite, molybdenum or zinc-plated aluminium.
A kind of chamber heater provided by the invention, the appearance of the non-uniform phenomenon that such as can reduce or avoid plasma starter to cause because structure is asymmetric in plasma etch process; Under plasma starter condition, electrode fixing structure of the present invention does not have phenomenon of deflation, and vacuum chamber can be kept the requirement of vacuum degree.
Accompanying drawing explanation
A kind of chamber heater structural representation that Fig. 1 provides for the embodiment of the present invention;
Fig. 2 is the stereogram of structure shown in Fig. 1.
Embodiment
A kind of chamber heater provided by the invention, comprises chamber wall heating arrangement and/or slide holder heating arrangement.Chamber wall heating arrangement is arranged on the inwall of reaction chamber; Slide holder heating arrangement is arranged on bottom slide holder.
Wherein, chamber wall heating arrangement comprises the first heater coil, extraction electrode and is provided with the cavity inner lining cover of cavity.Cavity inner lining cover is the cylinder of a hollow, and cavity inner lining cover is arranged on the inwall of reaction chamber.Cavity is arranged on cavity inner lining and overlaps between inside and outside wall, and two ends seal.First heater coil in the shape of a spiral, is arranged on the cavity inside of cavity inner lining cover, is made up of 2 ~ 200 circles.The caliber of the first heater coil is 1 ~ 200mm, and diameter range is 10 ~ 10000mm, and helix pitch is 1 ~ 1000mm.The tube wall of the first heater coil is 0.5 ~ 10mm, according to circumstances adjustable to the distance of cavity inner lining jacket wall.Distance between cavity inner lining cover outer wall and reaction chamber 6 inwall is 1 ~ 20mm.Cavity inner lining overlaps inside and outside wall thickness and is 0.5 ~ 30mm, adopts anodized aluminum alloy, SiC, molybdenum, graphite material to make.The diameter of cavity inner lining cover inwall is 100 ~ 5000mm.Extraction electrode voltage Vt is 5V ~ 2000V, and heating power Pt is 1 ~ 10000W.
Slide holder heating arrangement comprises the second heater coil and extraction electrode.Second heater coil is planar spiral structures, is made up of, is equally spacedly arranged on bottom slide holder, is connected with extraction electrode 1 ~ 50 circle.The caliber of the second heater coil is 0.5 ~ 100mm, and diameter range is 10 ~ 5000mm, and helix pitch is 1 ~ 1000mm.Extraction electrode voltage Vs is 5V ~ 2000V, and heating power is 1W ~ 5000W.
In chamber wall heating arrangement and slide holder heating arrangement, the temperature of heating slide holder and cavity inner lining cover is 20 ~ 2000 DEG C, and heating uniformity changes according to the effective thickness of cavity inner lining cover and slide holder.First heater coil and the second heater coil are built-in metal silk heating tube, infrared heating pipe, ceramic heating pipe or graphite heating dish, and outside insulating material comprises pottery, quartz or Merlon.Extraction electrode comprises copper, graphite, molybdenum or zinc-plated aluminium.
Below in conjunction with drawings and Examples, technical solution of the present invention is further described.
Embodiment one:
Shown in composition graphs 1, Fig. 2, embodiments provide a kind of chamber heater, comprise slide holder 1, slide holder heating arrangement 2, chamber wall heating arrangement 3, top electrode 4, cavity top cover 5, reaction chamber be 6, supporting disk 7, enterprising gas port 8, lower air inlet 9 and support ring 10.Wherein, slide holder 1 arranges the center of chamber wall heating arrangement 3.Chamber wall heating arrangement 3 is arranged on the inwall of reaction chamber 6.Slide holder heating arrangement 2 is arranged on slide holder bottom.Enterprising gas port 8 is arranged on cavity top cover 5.Top electrode 4 is connected with cavity top cover 5.Supporting disk 7 is fixed on the bottom of chamber wall heating arrangement 3, and is connected with slide holder 1 by support ring 10.
Wherein, chamber wall heating arrangement comprises the first heater coil 12, extraction electrode and is provided with the cavity inner lining cover 11 of cavity.Cavity inner lining cover 11 is cylinders of a hollow, and cavity inner lining cover 11 is arranged on the inwall of reaction chamber 6.Cavity is arranged on cavity inner lining and overlaps between 11 inside and outside walls, and two ends seal.First heater coil 12 is helical form, is made up of, is set in qually spaced in cavity 2 circles.The caliber of the first heater coil 12 is 1mm, and screw diameter is 50mm, and helix pitch is 5mm.The distance that the tube wall of the first heater coil 12 overlaps 11 walls to cavity inner lining is 0.5mm, according to circumstances adjustable.The cavity inner lining distance of overlapping between 11 outer walls and reaction chamber 6 inwall is 1mm.Cavity inner lining overlaps 11 inside and outside wall thickness and is 2mm, adopts anodized aluminum alloy to make.The diameter of the inwall of cavity inner lining cover 11 is 100mm.Extraction electrode voltage Vt is 48V, and heating power Pt is 100W.
Slide holder heating arrangement comprises the second heater coil 13 and extraction electrode.Second heater coil 13, in planar spiral structures, is made up of 2 circles, is arranged on the center of slide holder 1 bottom, is connected with extraction electrode.The caliber of the second heater coil 13 is 5mm, and diameter is 50mm.Extraction electrode voltage Vs is 48V, and heating power is 100W.
In chamber wall heating arrangement 3 and slide holder heating arrangement 2, the temperature of heating slide holder 1 and cavity inner lining cover 11 is 30 DEG C, and heating uniformity is according to the effective thickness change of cavity inner lining cover 11 and slide holder 1.First heater coil 12 and the second heater coil 13 are built-in metal silk heating tube, and outside insulating material is pottery.Extraction electrode is copper.
When reacting gas passes through cavity top cover 5 by enterprising gas port 8, enter reaction chamber 6, during for preventing starter, reacting gas Yin Wendu is lower, or the uneven reaction product aggregation deposition that causes is on reaction chamber 6 surface, pollute chip, the chip quality of processes is declined, needs the heating arrangement enabling the present embodiment to heat the chip on chamber wall and slide holder 1, make chip surface temperature and chamber wall have the temperature of constant homogeneous.Then, top electrode 4 loads radio frequency, gas starter is discharged, processes chip, and the gas produced after etching and reactant, from support ring 10 and supporting disk 7, through exporting 9 discharges.
Chamber wall heating arrangement 3 in a kind of chamber heater that the present embodiment provides and slide holder heating arrangement 2, for the temperature homogeneity improving slide holder chip, remove processing contaminants, reduce byproduct of reaction to play a very important role, the reliability and stability for plasma process have important effect.The appearance of the non-uniform phenomenon that can reduce or avoid plasma starter to cause because structure is asymmetric; Under plasma starter condition, the heating arrangement of the embodiment of the present invention does not have phenomenon of deflation, and vacuum chamber can be kept the requirement of vacuum degree; Inner at electric field, keep the symmetry of the physical structure of heating arrangement, thus make its physical characteristic keep field symmetry, thus effectively improve the uniformity consistency of plasma process.
Embodiment two:
The present embodiment and embodiment one difference are, in chamber wall heating arrangement, the first heater coil 12 is made up of 100 circles.The caliber of the first heater coil 12 is 200mm, and diameter is 10000mm, and helix pitch is 1000mm.The tube wall of the first heater coil is 10mm to the distance of cavity inner lining jacket wall.The cavity inner lining distance of overlapping between 11 outer walls and reaction chamber 6 inwall is 20mm.Cavity inner lining overlaps 11 inside and outside wall thickness and is 30mm, adopts molybdenum to make.The diameter of the inwall of cavity inner lining cover 11 is 5000mm.Extraction electrode voltage Vt is 2000V, and heating power Pt is 5000W.
In slide holder heating arrangement 2, the number of turns of the second heater coil 13 is 5 circles.The caliber of the second heater coil 13 is 5mm, and the diameter of the second heater coil 13 innermost layer coil is 100mm, and helix pitch is 60mm.Extraction electrode voltage Vs is 2000V, and heating power is 5000W.
In chamber wall heating arrangement 3 and slide holder heating arrangement 2, the temperature of heating slide holder 1 and cavity inner lining cover 11 is 2000 DEG C, and heating uniformity is according to the effective thickness change of cavity inner lining cover 11 and slide holder 1.First heater coil 12 and the second heater coil 13 are graphite heating dish.The insulating material of heater coil outside is Merlon.Extraction electrode is zinc-plated aluminium.Other are local completely the same with embodiment one.
Embodiment three:
The present embodiment and embodiment one difference are, in chamber wall heating arrangement, the first heater coil 12 is made up of 25 circles.The caliber of the first heater coil 12 is 100mm, and diameter is 5000mm, and helix pitch is 500mm.First heater coil 12 wall is 5mm to the distance of cavity inner lining jacket wall.The cavity inner lining distance of overlapping between 11 outer walls and reaction chamber 6 inwall is 10mm.Cavity inner lining overlaps 11 inside and outside wall thickness and is 15mm, adopts SiC material to make.The diameter that cavity inner lining overlaps 11 inwalls is 2500mm.Extraction electrode voltage Vt is 1000V, and heating power Pt is 5000W.
In slide holder heating arrangement, the second heater coil 13 is made up of 25 circles.The caliber of the second heater coil 13 is 50mm, and the diameter of the second heater coil 13 outermost layer coil is 2500mm, and helix pitch is 10mm.Extraction electrode voltage Vs is 1000V, and heating power is 2500W.
In chamber wall heating arrangement 3 and slide holder heating arrangement 2, the temperature of heating slide holder 1 and cavity inner lining cover 11 is 1000 DEG C, and heating uniformity is according to the effective thickness change of cavity inner lining cover 11 and slide holder 1.First heater coil 12 and the second heater coil 13 are ceramic heating pipe.The insulating material of heater coil outside is quartz.Extraction electrode is molybdenum.Other are local completely the same with embodiment one.
Embodiment four:
The present embodiment and embodiment one difference are, embodiments provide a kind of chamber heater and do not comprise slide holder heating arrangement 2, and in chamber wall heating arrangement, the first heater coil 12 is made up of 40 circles.The caliber of the first heater coil 12 is 50mm, and diameter range is 3000mm, and helix pitch is 300mm.The tube wall of the first heater coil 12 is 4mm to the distance of cavity inner lining jacket wall.The cavity inner lining distance of overlapping between 11 outer walls and reaction chamber 6 inwall is 8mm.The thickness that cavity inner lining overlaps 11 inside and outside walls is 10mm, adopts SiC material to make.The diameter of chamber liner 11 inwall is 3000mm.Extraction electrode voltage Vt is 800V, and heating power Pt is 1000W.
In chamber wall heating arrangement 3, the temperature of cavity inner lining cover 23 is 800 DEG C, and heating uniformity is according to the effective thickness change of cavity inner lining cover 11.First heater wire 112 is infrared heating pipe.The insulating material of the first heater coil 12 outside is quartz.Extraction electrode material is graphite.Other are local completely the same with embodiment one.
Embodiment five:
The present embodiment and embodiment one difference are, embodiments provide a kind of chamber heater and do not comprise chamber wall heating arrangement 3.Wherein, in slide holder heating arrangement 2, the second heating tube coil 13 is made up of 5 circles.The caliber of the second heater coil 13 is 20mm, and the diameter of the innermost layer coil of the second heater coil 13 is 50mm, and helix pitch is 30mm.Extraction electrode voltage Vs is 1000V, and heating power is 3500W.
In slide holder heating arrangement 2, the temperature of heating slide holder 1 is 1200 DEG C, and heating uniformity changes according to the effective thickness of slide holder 1.Second heater coil 13 is built-in metal silk heating tube.The insulating material of the second heater coil 13 outside is pottery.Extraction electrode is copper.Other are local completely the same with embodiment one.
Above-described embodiment is the present invention's preferably execution mode; but embodiments of the present invention are not restricted to the described embodiments; change, the modification done under other any does not deviate from Spirit Essence of the present invention and principle, substitute, combine, simplify; all should be the substitute mode of equivalence, be included within protection scope of the present invention.
Claims (5)
1. a chamber heater, is characterized in that, comprising:
Chamber wall heating arrangement and/or slide holder heating arrangement;
Described chamber wall heating arrangement is arranged on the inwall of reaction chamber;
Described slide holder heating arrangement is arranged on bottom slide holder;
Described chamber wall heating arrangement comprises:
First heater coil, extraction electrode and be provided with the cavity inner lining cover of cavity;
Described cavity inner lining cover is the cylinder of a hollow, and described cavity inner lining cover is arranged on the inwall of reaction chamber;
Described cavity is arranged on described cavity inner lining and overlaps between inside and outside wall;
Described first heater coil in the shape of a spiral, is arranged on described cavity inside;
The number of turns of described first heater coil is 2 ~ 200 circles, and the caliber of described first heater coil is 1 ~ 200mm, and diameter range is 10 ~ 10000mm, and helix pitch is 1 ~ 1000mm;
The tube wall of described first heater coil is 0.5 ~ 10mm to the distance of cavity inner lining jacket wall;
Distance between described cavity inner lining cover outer wall and reaction chamber inwall is 1 ~ 20mm;
Described cavity inner lining overlaps inside and outside wall thickness and is 0.5 ~ 30mm;
The diameter of described cavity inner lining cover inwall is 100 ~ 5000mm;
Described extraction electrode voltage Vt is 5V ~ 2000V, and heating power Pt is 1 ~ 10000W;
Described slide holder heating arrangement comprises the second heater coil and extraction electrode; Described second heater coil is snail shape, is connected with described extraction electrode;
The number of turns of described second heater coil is 1 ~ 50 circle, and described second heater coil caliber is 0.5 ~ 100mm, and diameter range is 10 ~ 5000mm, and helix pitch is 1 ~ 1000mm;
Described extraction electrode voltage Vs is 5V ~ 2000V, and heating power is 1W ~ 5000W.
2. chamber heater as claimed in claim 1, is characterized in that:
The temperature of described heating slide holder and cavity inner lining cover is 20 ~ 2000 DEG C.
3. chamber heater as claimed in claim 1, is characterized in that:
Described first heater coil and the second heater coil are built-in metal silk heating tube, infrared heating pipe, ceramic heating pipe or graphite heating dish.
4. chamber heater as claimed in claim 1, is characterized in that:
The insulating material of described first heater coil and the second heater coil outside comprises pottery, quartz or Merlon.
5. chamber heater as claimed in claim 1, is characterized in that:
Described cavity inner lining cover adopts anodized aluminum alloy, SiC, molybdenum, graphite material to make;
Described extraction electrode comprises copper, graphite, molybdenum or zinc-plated aluminium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210014888.5A CN103208440B (en) | 2012-01-17 | 2012-01-17 | Chamber heater |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210014888.5A CN103208440B (en) | 2012-01-17 | 2012-01-17 | Chamber heater |
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| Publication Number | Publication Date |
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| CN103208440A CN103208440A (en) | 2013-07-17 |
| CN103208440B true CN103208440B (en) | 2016-01-20 |
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| CN201210014888.5A Active CN103208440B (en) | 2012-01-17 | 2012-01-17 | Chamber heater |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108728800B (en) * | 2017-04-24 | 2019-12-24 | 中国科学院物理研究所 | Multifunctional processing device used in vacuum environment |
| CN109868448A (en) * | 2017-12-04 | 2019-06-11 | 天虹科技股份有限公司 | The aluminium attaching method and vacuum of metallic film coating machine transmit cavity configuration |
| CN108048820A (en) * | 2017-12-22 | 2018-05-18 | 江苏鲁汶仪器有限公司 | Vapor deposition apparatus and vapor deposition method |
| CN112542370B (en) * | 2019-09-23 | 2024-04-05 | 中微半导体设备(上海)股份有限公司 | Plasma processor and heater assembly thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6084215A (en) * | 1997-11-05 | 2000-07-04 | Tokyo Electron Limited | Semiconductor wafer holder with spring-mounted temperature measurement apparatus disposed therein |
| CN1528948A (en) * | 2003-09-30 | 2004-09-15 | 张国华 | Gallium nitride base film epitaxial growth apparatus by metal organic chemical vapor deposition |
| CN101291551A (en) * | 2007-04-17 | 2008-10-22 | 东京毅力科创株式会社 | Life estimating method and treating system for heater wire, heating apparatus, and storage medium |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63181414A (en) * | 1987-01-23 | 1988-07-26 | Nippon Telegr & Teleph Corp <Ntt> | Apparatus for forming semiconductor film |
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2012
- 2012-01-17 CN CN201210014888.5A patent/CN103208440B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6084215A (en) * | 1997-11-05 | 2000-07-04 | Tokyo Electron Limited | Semiconductor wafer holder with spring-mounted temperature measurement apparatus disposed therein |
| CN1528948A (en) * | 2003-09-30 | 2004-09-15 | 张国华 | Gallium nitride base film epitaxial growth apparatus by metal organic chemical vapor deposition |
| CN101291551A (en) * | 2007-04-17 | 2008-10-22 | 东京毅力科创株式会社 | Life estimating method and treating system for heater wire, heating apparatus, and storage medium |
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| CN103208440A (en) | 2013-07-17 |
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