CN112542370B - Plasma processor and heater assembly thereof - Google Patents
Plasma processor and heater assembly thereof Download PDFInfo
- Publication number
- CN112542370B CN112542370B CN201910899771.1A CN201910899771A CN112542370B CN 112542370 B CN112542370 B CN 112542370B CN 201910899771 A CN201910899771 A CN 201910899771A CN 112542370 B CN112542370 B CN 112542370B
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- heater assembly
- side wall
- base body
- heating
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- 238000010438 heat treatment Methods 0.000 claims abstract description 173
- 239000000758 substrate Substances 0.000 claims abstract description 103
- 238000006243 chemical reaction Methods 0.000 claims abstract description 29
- 238000005507 spraying Methods 0.000 claims abstract description 26
- 239000010410 layer Substances 0.000 claims description 93
- 239000007789 gas Substances 0.000 claims description 75
- 239000011159 matrix material Substances 0.000 claims description 15
- 239000002356 single layer Substances 0.000 claims description 9
- 239000007769 metal material Substances 0.000 claims description 7
- 230000003139 buffering effect Effects 0.000 claims description 5
- 239000012495 reaction gas Substances 0.000 claims description 5
- -1 iron-chromium-aluminum Chemical compound 0.000 claims description 4
- 229910001120 nichrome Inorganic materials 0.000 claims description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000011426 transformation method Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Resistance Heating (AREA)
Abstract
The invention discloses a plasma processor and a heater component thereof, the plasma processor comprises a reaction cavity, an electrostatic chuck is arranged in the reaction cavity, a base is arranged below the electrostatic chuck, a gas spraying device is arranged at the upper part of the reaction cavity, the heater component is arranged in a set space and used for controlling the temperature of a part to be heated, and the heater component comprises: the side wall of the substrate is provided with a plurality of layers of grooves, and a height difference exists between any two adjacent layers of grooves; the heating pipes are wound in the multi-layer grooves on the base body, are distributed in a plurality of circles along the height direction of the base body and are used for increasing the length of the heating pipes in the set space. The invention utilizes the spare space to improve the overall height of the heater assembly, and the heating pipe can be coiled at the outer layer, can also be coiled at the inner side and the outer side at the same time, thereby being beneficial to increasing the length of the heating pipe, reducing the power density of the heating pipe, improving the heating power on the basis of the length, and ensuring the reliability and the service life of the heater; the heater adopts the form of single-ended lead wire, facilitates the use.
Description
Technical Field
The invention relates to the field of plasma etching, in particular to a plasma processor and a heater assembly thereof.
Background
In the field of semiconductor manufacturing, a showerhead for supplying gas in a shower-like manner to a substrate to be processed is widely used. For example, in a plasma etching apparatus, a stage for placing a substrate is provided in a processing chamber, a shower head is provided at a position facing the stage, and a plurality of gas discharge holes are provided on a surface of the shower head to supply a reactive gas in a shower shape to generate plasma. In plasma etching chambers, temperature control of the gas shower plays a very important role, which affects the etching rate.
Since the temperature of the gas spraying device is required to be constant, the temperature should be the same as the etching process even if the etching process is not performed, and thus the gas spraying device needs to be heated by a heater when the etching process is not performed, the power of the heater is in direct proportion to the RF power, and the larger the RF power is, the larger the power of the heater is. The high power would necessitate a correspondingly high power heater. However, when the power of the heater is increased while maintaining the conventional structure and size, the power density of the heater is necessarily increased, which results in difficult processing, easy burning and unstable life.
Therefore, the heating pipe of the prior art has high power per unit area and is easy to burn out. For the above reasons, it is necessary to develop a heater assembly that can improve reliability and lifetime.
Disclosure of Invention
The invention aims to provide a plasma processor and a heater assembly thereof, which utilize the spare space on the inner side of a mounting substrate to improve the overall height of the heater assembly, so as to increase the length of a tubular heater in the heater assembly, and after the length of a heating pipe is greatly increased, the power density of the heater pipe can be reduced, the heating power can be further improved on the basis, and the reliability and the service life of the heater can be ensured.
In order to achieve the above purpose, the present invention is realized by the following technical scheme:
a heater assembly for a plasma processor, the plasma processor including a reaction chamber, the heater assembly disposed within a set space for controlling the temperature of a component to be heated in the plasma processor, the heater assembly comprising:
a substrate with a set height, wherein a plurality of layers of grooves are formed on the side wall of the substrate, and a height difference exists between any two adjacent layers of grooves;
and the heating pipes are wound in the multi-layer grooves on the substrate, are distributed along the height direction of the substrate in a plurality of circles and are used for increasing the length of the heating pipes in the set space.
Preferably, the substrate is of annular structure, and the heating pipe is wound in a multi-layer groove on the outer side wall of the substrate and/or a multi-layer groove on the inner side wall of the substrate.
Preferably, the width of the bottom of the substrate is larger than the width of the top of the substrate, and the multi-layer grooves are spirally arranged on the outer side wall and/or the inner side wall of the substrate.
Preferably, the heater assembly further comprises at least one cover plate adapted to the base body and mounted on an inner side wall of the base body and/or an outer side wall of the base body for clamping the corresponding heating tube.
Preferably, the cover plate is a hollow shell structure.
Preferably, the substrate is of a single-layer ring structure or of a multi-layer ring structure, and one outer ring of any two adjacent rings is surrounded on the outer side of the other inner ring;
and the heating pipes distributed in a plurality of circles are wound in the multi-layer grooves on the outer side wall and/or the multi-layer grooves on the inner side wall of at least one layer of annular structure in the matrix.
Preferably, the hierarchy of the ring structure of the substrate is denoted as i, and comprises n layers of ring structures, n is equal to or greater than 1, and the numerical values i of all the hierarchies from inside to outside are sequentially denoted as 1,2 and … … n;
the heating pipes are wound in the multi-layer grooves on the outer side wall of the substrate, and the number of the heating pipes is n or less than n;
or the heating pipes are wound in the multi-layer grooves on the inner side wall of the substrate, and the number of the heating pipes is n or less than n;
or the heating pipes are wound in the multi-layer grooves on the inner side wall and the outer side wall of the substrate at the same time, and the number of the heating pipes is 2n or less than 2n.
Preferably, when n is equal to 1, the matrix is of a single-layer ring structure, further comprising:
the number of the cover plates is 1, the cover plates are covered on the base body, and the cover plates are sleeved on the outer side of the base plate or inserted into the hollow part of the base body and used for clamping and fixing heating pipes on the outer side of the base body or tightly fixing heating pipes on the inner side of the base body.
Preferably, when n+.2, the matrix is a multilayer ring structure, further comprising:
the heating pipes are wound in a multi-layer groove on the outer side wall of the substrate, the number of the cover plates is n, the number marks s of the cover plates from inside to outside are sequentially marked as 1 st, 2 nd … … nth, the number marks t of the heating pipes from inside to outside are sequentially marked as 1 st, 2 nd … … nth, the s-th cover plate is sleeved on the outer side of the i-th layer ring structure of the substrate and is used for clamping and fixing the heating pipes on the outer side of the t th, and s=i=t;
or the heating pipes are wound in a multi-layer groove on the inner side wall of the substrate, the number of the cover plates is n, the number marks s of the cover plates from inside to outside are sequentially marked as 1 st, 2 nd … … nth, the number marks t of the heating pipes from inside to outside are sequentially marked as 1 st, 2 nd … … nth, the s-th cover plate is inserted into the hollow part of the i-th layer ring structure of the substrate and used for clamping and fixing the heating pipes on the t-th inner side, and s=i=t;
or the heating pipes are wound in the multi-layer grooves on the inner side wall and the outer side wall of the substrate at the same time, the number of the cover plates is n+1, the number marks s of the cover plates from inside to outside are sequentially marked as 1 st, 2 nd … … n+1, and the number marks t of the heating pipes from inside to outside are sequentially marked as 1 st, 2 nd … … n, wherein the 1 st cover plate is inserted into the hollow part of the 1 st layer ring structure of the substrate and is used for clamping and fixing the 1 st inner side heating pipe, the n+1 cover plate is sleeved on the outer side of the n layer ring structure of the substrate and is used for clamping and fixing the 2 nd heating pipe, the s cover plate between 1 and n+1 is arranged between the outer side of the i-1 th layer ring structure and the inner side of the i layer ring structure and is used for clamping and fixing the 2i-2 nd and 2i-1 th heating pipe, and s=i.
Preferably, the cover plate is fastened to the base body by means of screws.
Preferably, the substrate is made of a thermally conductive metallic material; the heating wire arranged in the heating pipe is a nichrome heating wire or an iron-chromium-aluminum heating wire; the cover plate is made of a metal material.
Preferably, the cover plate has a thermal conductivity lower than that of the base body.
Preferably, the heating pipe is in a single-end wiring mode or a multi-end wiring mode.
Preferably, an electrostatic chuck is arranged in the reaction cavity and used for supporting a wafer, a base is arranged below the electrostatic chuck and used for bearing the electrostatic chuck, a gas spraying device is arranged at the upper part of the reaction cavity and connected with a gas supply device, and reaction gas in the gas supply device enters the reaction cavity through the gas spraying device;
the component to be heated is the gas spraying device, and/or the component to be heated is the electrostatic chuck and/or the pedestal.
Preferably, the gas spraying device comprises a mounting substrate and a gas spraying head, wherein the gas spraying head is connected to the lower part of the mounting substrate, a gas buffering component is arranged on the inner side of the mounting substrate, and the set space is at least a part of a gap between the outer side wall of the gas buffering component and the inner side wall of the mounting substrate; and/or the setting space is at least a part of a gap between the base and the electrostatic chuck.
Preferably, the heater assembly further comprises heat transfer gaskets connected to the base and the component to be heated, respectively.
Preferably, at least a part of the bottom of the base body is fixedly connected with the heat transfer gasket and the mounting substrate through screws.
The invention also provides a plasma processor, which comprises a reaction cavity, wherein an electrostatic chuck is arranged in the reaction cavity and used for supporting a wafer, a base is arranged below the electrostatic chuck and used for bearing the electrostatic chuck, a gas spraying device is arranged at the upper part of the reaction cavity and connected with a gas supply device, reaction gas in the gas supply device enters the reaction cavity through the gas spraying device, and any part to be heated in the plasma processing is subjected to temperature control through the heater assembly, so that the part to be heated reaches the target temperature.
Preferably, the component to be heated is the gas spraying device; and/or the component to be heated is the electrostatic chuck and/or the pedestal.
Compared with the prior art, the invention has the beneficial effects that: (1) The invention utilizes the spare space on the inner side of the mounting substrate to improve the overall height of the heater assembly, so as to increase the length of the tubular heater in the heater assembly, and after the length of the heating pipe is greatly increased, the power density of the heating pipe can be reduced, and meanwhile, the heating power can be improved on the basis, and the reliability and the service life of the heater are ensured; (2) The tubular heater can be in the form of a single-ended lead wire, and is convenient to use; (3) The tubular heater is coiled in the matrix of the heater component in a spiral mode, and the heating pipe can be coiled at the outer layer or at the inner side and the outer side, so that the length of the heating pipe can be increased.
Drawings
FIG. 1 is a schematic diagram of a plasma processor including a heater assembly based on increasing the overall height of the heater assembly in accordance with the present invention;
FIG. 2 is a schematic view of a heater assembly in a gas shower according to a first embodiment of the present invention;
FIG. 3a is a schematic diagram of a heater assembly according to a first embodiment of the present invention;
FIG. 3b is a schematic view of a heating tube of a heater assembly according to a first embodiment of the present invention;
FIG. 3c is a schematic view of a heater assembly of a first embodiment of the present invention with a base and heating tube combination;
FIG. 3d is a schematic diagram of a cover plate of a heater assembly according to a first embodiment of the invention;
FIG. 3e is a schematic perspective view showing the overall structure of a heater assembly according to a first embodiment of the present invention;
FIG. 3f is a partial cross-sectional view of a heater assembly according to a first embodiment of the present invention;
FIG. 4 is a schematic diagram of a heater assembly in a gas shower in accordance with a second embodiment of the present invention;
FIG. 5a is a schematic view of a heater assembly according to a first embodiment of the present invention;
FIG. 5b is a schematic view of a heater assembly of a first embodiment of the present invention with a base and two heating tubes in combination;
FIG. 5c is a schematic view of an outer cover plate of a heater assembly according to a first embodiment of the invention;
FIG. 5d is a schematic view of an inner cover plate of a heater assembly according to a first embodiment of the invention;
FIG. 5e is a schematic perspective view showing the overall structure of a heater assembly according to a first embodiment of the present invention;
FIG. 5f is a partial cross-sectional view of a heater assembly according to a first embodiment of the present invention;
FIG. 6 is a schematic view of a heater assembly of a fourth embodiment of the present invention in combination with a base and a heating tube.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
As shown in fig. 1, the plasma processor of the present invention comprises a vacuum reaction chamber 1, and the reaction chamber 1 includes a substantially cylindrical reaction chamber sidewall 11 made of a metal material. The upper part of the reaction chamber 1 of the plasma processor is provided with a gas spraying device 100 and penetrates through the side wall 11 of the reaction chamber at the upper part. The gas shower apparatus 100 is connected to a gas supply apparatus, and a reaction gas in the gas supply apparatus passes through the gas shower apparatus 100 to enter the vacuum reaction chamber 1. An electrostatic chuck 7 for supporting a wafer 8 and a susceptor 6 for supporting the electrostatic chuck 7 are provided below the inside of the reaction chamber 1.
The gas shower apparatus 100 includes a mounting substrate 2, a heater assembly 3, a gas shower head 4, and a gas buffer member 5. The gas shower head 4 is used for spraying gas in a dispersed manner, and the gas shower head 4 is connected to the lower part of the upper electrode mounting substrate 2. The gas buffer member 5 is disposed inside the mounting substrate 2, and the gas buffer member 5 is a space for buffering the process gas for sufficiently mixing a plurality of gases in the buffer space. The heater assembly 3 is disposed between the outer sidewall of the gas buffer member 5 and the inner sidewall of the mounting substrate 2 for controlling the temperature of the gas shower apparatus 100, and the space of the heater assembly 3 is limited because the size of the gas buffer member 5 and the mounting substrate 2 are relatively fixed, so that a large heating power is required to be applied to the heater assembly 3 in order to maintain continuous heating of the gas shower head, and the problems such as burning of the heating tube due to excessive heating density in a limited space are prevented.
Embodiment one:
as shown in fig. 2 and in combination with fig. 3a-3f, the heater assembly 3 is further provided with a heat transfer gasket 9 for conducting heat to the mounting substrate 2. The heater assembly 3 comprises a base 3102, an upper cover plate 3103 and a heating tube 3101 of tubular structure distributed in a plurality of turns. The base 3102 of the heater assembly 3 is placed on the upper surface of the heat transfer pad 9. The base 3102 has a ring-shaped structure, and is disposed around the outer side of the gas buffer member 5 between the outer side wall of the gas buffer member 5 and the inner side wall of the mounting substrate 2.
The bottom width of the substrate 3102 is greater than the top width, a plurality of layers of grooves are formed in the outer side wall of the substrate 3102, a certain height difference exists between the grooves of any two adjacent layers, and the plurality of layers of grooves are spirally arranged on the outer side wall of the substrate 3102. The heating tube 3101 is a tubular structure with a certain length, which is wound in a multi-layer groove on the outer side wall of the substrate 3102, and the heating tube 310 is wound for a plurality of circles along the height direction of the substrate 3102, so that the heater assembly 3 of the invention can be distributed with a plurality of circles of heating tubes 3101 along the height direction of the substrate, so as to increase the length of the tubular heating tube, reduce the power density of the heating tube, improve the reliability and prolong the service life.
The upper cover plate 3103 is a hollow shell structure matched with the base body 3102, the upper cover plate 3103 is sleeved outside the base body 3102, the base body 3102 is located inside the upper cover plate 3103, and the heating pipe 3101 wound on the outer side wall of the base body 3102 is clamped and fixed between the inner side wall of the upper cover plate 3103 and the outer side wall of the base body 3102.
In this embodiment, the upper cover plate 3103 is fastened to the base 3102 by screws, and at least a portion of the bottom of the base 3102 is fastened to the heat transfer pad 9 and the mounting board 2 by screws.
Alternatively, the substrate 3102 may be an aluminum alloy or copper or other metal with better heat conductivity for transferring heat from the heating tube to the underlying heating element as much as possible. The heating wire arranged in the heating pipe 3101 is a nichrome heating wire or an iron-chromium-aluminum heating wire; the upper cover 3103 is made of a metal material, but the material of the heater assembly of the invention is not limited thereto. Optionally, the thermal conductivity of the upper cover 3103 is lower than that of the base to prevent heat dissipation of the heating tube.
In this embodiment, the heater assembly 3 may be in the form of a single-ended lead, specifically, a multi-turn distributed spiral heating tube is wound on the outer side of the substrate 3102, and the head ends and the tail ends of the spiral heating tube are close to each other and are located on one side of the heater assembly 3, so that the use is convenient; wherein, the head and tail ends of the heating tube can be respectively led out of a connector lug (not shown) for connecting with a power supply, or the heating tube can be led out of any one end of the head and tail ends for connecting with the power supply (as shown in figures 3a-3 f). However, the heater module 3 of the present invention is not limited to the single-ended lead type, and may be a double-ended lead as long as the lead-out is ensured to be connectable to a power source.
Embodiment two:
as shown in fig. 4 and 5a-5f in combination, the heater assembly 3 is further provided with a heat transfer pad 9 for conducting heat to the mounting substrate 2. Heater assembly 3 includes a base 3202, an inner heating tube 3201-1, an inner cover plate 3203-1, an outer heating tube 3201-2, and an outer cover plate 3203-2. Wherein, the inner heating tube 3201-1 and the outer heating tube 3201-2 are heating tubes with a tubular structure with a plurality of rings distributed.
The substrate 3202 of the heater assembly 3 is disposed on the upper surface of the heat transfer pad 9, the substrate 3202 has an annular structure, and the substrate 3202 is sleeved outside the gas buffer component 5 and between the outer side wall of the gas buffer component 5 and the inner side wall of the mounting substrate 2.
The bottom width of the substrate 3202 is greater than the top width, and the outer side wall and the inner side wall of the substrate 3202 are respectively provided with a plurality of layers of grooves, wherein a certain height difference exists between the grooves of any two adjacent layers on the outer side wall or the inner side wall, and the plurality of layers of grooves are spirally arranged on the outer side wall and/or the inner side wall of the substrate 3202.
The inner heating tube 3201-1 is a tubular structure of a certain length, which is wound in a multi-layer groove on the inner side wall of the base 3202, and the inner heating tube 3201-1 is wound for a plurality of turns along the height direction of the base 3202; meanwhile, the outer heating tube 3201-2 is a multi-layered groove having a tubular structure with a certain length and wound on the outer sidewall of the base 3202, and the outer heating tube 3201-2 may be wound in a plurality of turns along the height direction of the base 3202. Therefore, the heater assembly 3 of the present embodiment has a plurality of heating pipes distributed along the height direction of the substrate, so as to increase the length of the tubular heating pipe, reduce the power density of the heating pipe, improve the reliability and prolong the service life.
The inner cover plate 3203-1 and the outer cover plate 3203-2 are hollow shell structures matched with the base body 3202 respectively, and the outer side of the inner cover plate 3203-1 is inserted into a hollow part in the base body 3202, so that the inner heating pipes 3201-1 distributed in multiple circles are clamped and fixed between the outer side wall of the inner cover plate 3203-1 and the inner side wall of the base body 3202. Similarly, the outer cover plate 3203-2 is sleeved on the outer side of the base 3202, so that the outer heating pipes 3201-2 distributed in multiple circles are clamped and fixed between the inner side wall of the outer cover plate 3203-2 and the outer side wall of the base 3202.
In this embodiment, the inner cover plate 3203-1 and the outer cover plate 3203-2 are both fastened to the base 3202 by screws, and at least a portion of the bottom of the base 3202 is fastened to the heat transfer pad 9 and the mounting board 2 by screws.
Alternatively, the substrate 3202 may be aluminum alloy or copper, and other metals with better heat conductivity, for transferring heat of the heating pipe to the heating component below as much as possible; the heating wires in the inner heating tube 3201-1 and/or the outer heating tube 3201-2 are nichrome heating wires or iron-chromium-aluminum heating wires; the inner cover plate 3203-1 and/or the outer cover plate 3203-2 are made of metal materials, but the material of the heater assembly of the present invention is not limited thereto. Optionally, the inner cover plate 3203-1 and/or the outer cover plate 3203-2 have a thermal conductivity lower than that of the base 3202 to prevent heat dissipation from the heating tube.
In this embodiment, the heater assembly 3 may be in the form of a single-ended lead, and the outer side and the inner side of the substrate 3202 are respectively wound with a multi-turn distributed spiral heating tube, and for the multi-turn wound inner heating tube and the multi-turn wound outer heating tube, the head end and the tail end of each heating tube are close to each other, and each head end and tail end of each heating tube may be respectively led out of a connector lug (not shown) for connecting to a power supply, or each heating tube may be led out of any one end of the head end and the tail end for connecting to the power supply (as shown in fig. 5a-5 f). Simultaneously, all the leading-out connector lugs of the inner heating pipe and the outer heating pipe are close to each other and are positioned on one side of the heater assembly 3. However, the heater module 3 of the present invention is not limited to the single-ended lead type, and may be a double-ended lead as long as the lead-out is ensured to be connectable to a power source.
Embodiment III:
as can be seen from the above-described first and second embodiments, the heater assembly 3 of the present invention is also provided with a heat transfer pad for conducting heat to the mounting substrate. The heater assembly 3 comprises a base body, a cover plate and a heating tube of tubular structure distributed in a plurality of turns. The substrate of the heater assembly 3 is arranged on the upper surface of the heat transfer gasket; the base body is of an annular structure, the bottom width of the base body is larger than the top width, and the base body is sleeved outside the gas buffer component and is positioned between the outer side wall of the gas buffer component and the inner side wall of the mounting substrate.
In this embodiment, the transformation method is as follows: the inner side wall of the substrate is provided with a plurality of layers of grooves, a certain height difference exists between the grooves of any two adjacent layers, and the plurality of layers of grooves on the inner side wall are spirally arranged on the inner side wall of the substrate. The heating pipe is of a tubular structure with a certain length, a plurality of layers of grooves are wound on the inner side wall of the base body, and the heating pipe can be wound for a plurality of circles along the height direction of the base body, so that the heater component can be provided with a plurality of circles of heating pipes along the height direction, the length of the tubular heating pipe is increased, the power density of the heating pipe can be reduced, the reliability is improved, and the service life of the heating pipe is prolonged.
The outer side of the cover plate is inserted into the hollow part in the matrix, so that a plurality of circles of distributed heating pipes are clamped and fixed between the outer side wall of the cover plate and the inner side wall of the matrix. Illustratively, the cover plate is fastened to the base by screws, and at least a portion of the base bottom is fastened to the heat transfer pad and the mounting substrate by screws.
Embodiment four:
the heater assembly 3 of the present invention is also provided with a heat transfer pad for conducting heat to the mounting substrate. The heater assembly 3 comprises a base body, a cover plate and a heating tube of tubular structure distributed in a plurality of turns. The substrate of the heater assembly 3 is arranged on the upper surface of the heat transfer gasket; the base body is of an annular structure, the bottom width of the base body is larger than the top width, and the base body is sleeved outside the gas buffer component and is positioned between the outer side wall of the gas buffer component and the inner side wall of the mounting substrate.
As shown in fig. 6, in this embodiment, the transformation method is as follows: the single-layer ring structure in the second embodiment is replaced with a double-layer ring structure (i.e., a ring structure level n=2) or a multi-layer ring structure of two or more layers (level n > 2). In a multiple ring structure, one outer ring of any two adjacent rings surrounds the other inner ring. Wherein, the hierarchical numerical marks i of the inner-outer ring structure are sequentially called 1,2,3 … i … n).
The multi-layer grooves are respectively formed in the outer side wall and the inner side wall of the ring structure of each level, a certain height difference is formed between the grooves of any two adjacent layers of the outer side wall of the ring structure of each level, the multi-layer grooves are spirally arranged on the outer side wall, and a certain height difference is formed between the grooves of any two adjacent layers of the inner side wall, and the multi-layer grooves are spirally arranged on the inner side wall.
The inner side heating pipe of each level ring structure is a tubular structure with a certain length, and is wound into grooves of each layer on the inner side wall of the level ring structure, and is wound into a plurality of circles along the height direction of the substrate; meanwhile, the outer heating pipe of the hierarchical ring structure is of a tubular structure with a certain length, and is wound on each layer of groove on the outer side wall of the hierarchical ring structure, and a plurality of turns are wound along the height direction of the substrate.
Therefore, each level of the heater assembly 3 of the present embodiment has a plurality of rings of heating pipes distributed along the height direction, so that the length of the tubular heating pipes is increased to a greater extent, the power density of the heating pipes can be reduced, and the reliability and the service life can be improved. It should be noted that the number of levels of the base body of the multi-layer ring structure should be adapted to the space between the outer side wall of the gas cushion member and the inner side wall of the mounting substrate, the diameter of the heating pipe, etc.
In this embodiment, since a spiral heating tube is wound on the outer sidewall and the inner sidewall of each hierarchical ring structure, the overall number of heating tubes of the heater assembly is 2n, and the number t of the heating tubes from inside to outside is sequentially referred to as 1 st, 2 nd … th t … nd 2n.
In the fourth embodiment, the number of cover plates of the heater assembly is n+1, and the number s of the cover plates from inside to outside is sequentially referred to as 1 st, 2 nd … … s … … n+1 st.
For the matrix of the multilayer ring structure, the level n is not less than 2, the 1 st cover plate is inserted into the hollow part of the 1 st layer ring structure of the matrix, the 1 st heating pipe is correspondingly clamped and fixed, the n+1th cover plate is sleeved on the outer side of the n layer ring structure of the matrix, the 2 nd heating pipe is correspondingly clamped and fixed, the s (1 < s < n+1) th cover plate is arranged between the outer side of the i-1 th layer ring structure and the inner side of the i layer ring structure, the 2i-2 heating pipe and the 2i-1 heating pipe are correspondingly clamped and fixed, and s=i. Other matters related to the base body of the ring structure, the combination relation between the base body and the heating pipe, each cover plate, the form of the single-ended lead wire, and the like refer to the matters from the first embodiment to the third embodiment, and are not described herein.
For example, as shown in fig. 6, the number of the required cover plates is 3, namely, the inner cover plate (1 st cover plate), the middle cover plate (2 nd cover plate) and the outer cover plate (3 rd cover plate) are respectively matched with the substrate structure, specifically, the outer side of the inner cover plate is inserted into the hollow part of the 1 st layer ring structure, so that the 1 st heating pipes distributed in multiple rings are clamped and fixed between the outer side wall of the inner cover plate and the inner side wall of the 1 st layer ring structure, and in the same way, the middle cover plate is inserted between the outer side of the 1 st layer ring structure and the inner side of the 2 nd layer ring structure, so that the 2 nd heating pipes distributed in multiple rings and the 3 rd heating pipes are respectively clamped and fixed between the outer side of the 1 st layer ring structure and the inner side of the middle cover plate, between the outer side of the middle cover plate and the inner side of the 2 nd layer ring structure, and the hollow part of the outer cover plate is sleeved outside the 2 nd layer ring structure, so that the 4 th heating pipes distributed in multiple rings are clamped and fixed between the outer side of the 2 nd layer ring structure.
Fifth embodiment:
the heater assembly 3 of the present invention is also provided with a heat transfer pad for conducting heat to the mounting substrate. The heater assembly 3 comprises a base body, a cover plate and a heating tube of tubular structure distributed in a plurality of turns. The substrate of the heater assembly 3 is arranged on the upper surface of the heat transfer gasket; the base body is of an annular structure, the bottom width of the base body is larger than the top width, and the base body is sleeved outside the gas buffer component and is positioned between the outer side wall of the gas buffer component and the inner side wall of the mounting substrate.
In this embodiment, the transformation method may be: the single-layer ring structure of the first embodiment is replaced with a multi-layer ring structure along a double-layer ring structure (level n=2) or two or more layers (level n > 2). In a multiple ring structure, one outer ring of any two adjacent rings surrounds the other inner ring. Wherein, the hierarchical numerical marks i of the inner-outer ring structure are sequentially called 1,2,3 … i … n). The heating pipe is wound in the multilayer groove on the lateral wall of every layer of ring structure of base member, and the number of apron is n, and from inside to outside the number mark s of apron is 1 st, 2 nd … … nth and from inside to outside the number mark t of heating pipe is 1 st, 2 nd … … nth in proper order, and the outside at the ith layer ring structure of base member is established to the s apron cover for press from both sides the heating pipe of tight fixed t outside, s=i=t.
Alternatively, in this embodiment, the transformation method may be: the single-layer ring structure in the third embodiment is replaced with a double-layer ring structure (level n=2) or a multi-layer ring structure of two or more layers (level n > 2). In a multiple ring structure, one outer ring of any two adjacent rings surrounds the other inner ring. Wherein, the hierarchical numerical mark i of the inner-outer ring structure is sequentially called 1,2,3 … i … n). The heating pipe is wound in the multilayer groove on the inside wall of every layer of ring structure of base member, and the number of apron is n, and from inside to outside the number mark s of apron is 1 st, 2 nd … … nth and from inside to outside the number mark t of heating pipe is 1 st, 2 nd … … nth in proper order, and the s apron inserts in the cavity part of the i-th layer ring structure of base member for press from both sides the inboard heating pipe of clamp fixing t, s=i=t.
Example six:
in this embodiment, the heater assembly may be changed in the following manner: the single-layer ring structures of two or three of the first, second and third embodiments are mixed and combined to form a corresponding multi-layer ring structure (level n+.2), wherein one outer ring of any two adjacent rings is surrounded on the outer side of the other inner ring. Wherein, the hierarchical numerical marks i of the inner-outer ring structure are sequentially called 1,2,3 … i … n). The single-layer ring structure is specifically referred to in the first, second and third embodiments, and meanwhile, other related contents such as the base body of the ring structure, the combination relation between the base body and the heating pipe, each cover plate, the form of the single-ended lead wire, etc. refer to the contents of the first to third embodiments, and are not described herein. Thus, the length of the tubular heating pipe is increased to a greater extent, the power density of the heating pipe can be reduced, the reliability is improved, and the service life is prolonged.
Embodiment seven:
the heater assembly according to the first to sixth embodiments of the present invention may be applied between an electrostatic chuck and a susceptor, for controlling the temperature of the electrostatic chuck, and facilitating the reaction between a substrate on the electrostatic chuck and plasma in a reaction chamber, thereby realizing the processing and manufacturing of the substrate. Therefore, the heater assembly of the present invention, in which the overall height of the heater assembly is increased by installing the empty space inside the substrate, can be used not only to control the temperature of the gas shower of the plasma processor, but also between the electrostatic chuck and the susceptor, and can be applied to other parts to be heated, and the heating object of the heater is not limited by the present invention.
The invention improves the overall height of the heater assembly by utilizing the spare space on the inner side of the mounting substrate, so as to increase the length of the tubular heater in the heater assembly, and after the length of the heating pipe is greatly increased, the power density of the heating pipe can be reduced, the heating power can be improved on the basis, and the reliability and the service life of the heater can be ensured; the tubular heater can be in the form of a single-ended lead wire, and is convenient to use; the tubular heater is coiled in the matrix of the heater component in a spiral mode, and the heating pipe can be coiled at the outer layer or at the inner side and the outer side, so that the length of the heating pipe can be increased.
While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (18)
1. A heater assembly for a plasma processor, the plasma processor including a reaction chamber, wherein the heater assembly is disposed in a set space outside a gas shower in an upper portion of the reaction chamber for controlling a temperature of the gas shower, the heater assembly comprising:
a substrate with a set height, wherein a plurality of layers of grooves are formed on the side wall of the substrate, and a height difference exists between any two adjacent layers of grooves;
at least one heating pipe wound in the multi-layer groove on the substrate, wherein the heating pipes are distributed along the height direction of the substrate in a plurality of circles and used for increasing the length of the heating pipe in the set space;
the lower surface of the base body and the upper surface of the gas spraying device are oppositely arranged to generate heat conduction, and the side wall of the base body extends from the lower surface of the base body to a direction away from the gas spraying device and is used for transmitting heat of the heating pipe to the gas spraying head device.
2. A heater assembly for a plasma processor as set forth in claim 1, wherein,
the base body is of an annular structure, and the heating pipe is wound in a multi-layer groove on the outer side wall of the base body and/or a multi-layer groove on the inner side wall of the base body.
3. A heater assembly for a plasma processor as set forth in claim 1, wherein,
the width of the bottom of the substrate is larger than that of the top of the substrate, and the multilayer grooves are spirally arranged on the outer side wall and/or the inner side wall of the substrate.
4. A heater assembly for a plasma processor as set forth in claim 2 or 3,
the heater assembly further comprises at least one cover plate which is matched with the base body and is arranged on the inner side wall of the base body and/or the outer side wall of the base body, and is used for clamping and fixing the corresponding heating pipe.
5. A heater assembly for a plasma processor as recited in claim 4, wherein,
the cover plate is of a hollow shell structure.
6. A heater assembly for a plasma processor as recited in claim 4, wherein,
the substrate is of a single-layer ring structure or a multi-layer ring structure, and one outer ring of any two adjacent rings surrounds the outer side of the other inner ring;
and the heating pipes distributed in a plurality of circles are wound in the multi-layer grooves on the outer side wall and/or the multi-layer grooves on the inner side wall of at least one layer of annular structure in the matrix.
7. A heater assembly for a plasma processor as recited in claim 6, wherein,
the hierarchy of the ring structure of the matrix is i, the matrix comprises n layers of ring structures, n is larger than or equal to 1, and the numerical value i of each hierarchy from inside to outside is sequentially 1,2 and … … n;
the heating pipes are wound in the multi-layer grooves on the outer side wall of the substrate, and the number of the heating pipes is n or less than n;
or the heating pipes are wound in the multi-layer grooves on the inner side wall of the substrate, and the number of the heating pipes is n or less than n;
or the heating pipes are wound in the multi-layer grooves on the inner side wall and the outer side wall of the substrate at the same time, and the number of the heating pipes is 2n or less than 2n.
8. A heater assembly for a plasma processor as recited in claim 7, wherein,
when n is equal to 1, the matrix is of a single-layer ring structure, further comprising:
the number of the cover plates is 1, the cover plates are covered on the base body, and the cover plates are sleeved on the outer side of the base body or inserted into the hollow part of the inner side of the base body and used for clamping and fixing the heating pipes on the outer side of the base body or tightly fixing the heating pipes on the inner side of the base body.
9. A heater assembly for a plasma processor as recited in claim 7, wherein,
when n is equal to or greater than 2, the substrate is a multilayer ring structure, further comprising:
the heating pipes are wound in a multi-layer groove on the outer side wall of the substrate, the number of the cover plates is n, the number marks s of the cover plates from inside to outside are sequentially marked as 1 st, 2 nd … … nth, the number marks t of the heating pipes from inside to outside are sequentially marked as 1 st, 2 nd … … nth, the s-th cover plate is sleeved on the outer side of the i-th layer ring structure of the substrate and is used for clamping and fixing the heating pipes on the outer side of the t th, and s=i=t;
or the heating pipes are wound in a multi-layer groove on the inner side wall of the substrate, the number of the cover plates is n, the number marks s of the cover plates from inside to outside are sequentially marked as 1 st, 2 nd … … nth, the number marks t of the heating pipes from inside to outside are sequentially marked as 1 st, 2 nd … … nth, the s-th cover plate is inserted into the hollow part of the inner side of the i-th layer ring structure of the substrate and is used for clamping and fixing the heating pipes of the t-th inner side, and s=i=t;
or the heating pipes are wound in the multi-layer grooves on the inner side wall and the outer side wall of the substrate at the same time, the number of the cover plates is n+1, the number marks s of the cover plates from inside to outside are sequentially marked as 1 st, 2 nd … … n+1, and the number marks t of the heating pipes from inside to outside are sequentially marked as 1 st, 2 nd … … n, wherein the 1 st cover plate is inserted into the hollow part of the inner side of the 1 st layer ring structure of the substrate and is used for clamping and fixing the 1 st inner side heating pipe, the n+1 cover plate is sleeved on the outer side of the n layer ring structure of the substrate and is used for clamping and fixing the 2 nd heating pipe, the s cover plate between 1 and n+1 is arranged between the outer side of the i-1 th layer ring structure and the inner side of the i layer ring structure and is used for clamping and fixing the 2i-2 and 2i-1 th heating pipes, and s=i.
10. A heater assembly for a plasma processor as recited in claim 4, wherein,
the cover plate is fixedly connected with the base body through screws.
11. A heater assembly for a plasma processor as recited in claim 4, wherein,
the matrix is made of a heat-conducting metal material;
the heating wire arranged in the heating pipe is a nichrome heating wire or an iron-chromium-aluminum heating wire;
the cover plate is made of a metal material.
12. A heater assembly for a plasma processor as recited in claim 4, wherein,
the cover plate has a lower thermal conductivity than the base.
13. A heater assembly for a plasma processor as set forth in claim 1, wherein,
the heating pipe is in a single-end wiring mode or a multi-end wiring mode.
14. A heater assembly for a plasma processor as set forth in claim 1, wherein,
an electrostatic chuck is arranged in the reaction cavity and used for supporting a wafer, a base is arranged below the electrostatic chuck and used for bearing the electrostatic chuck, a gas spraying device is arranged on the upper portion of the reaction cavity and connected with a gas supply device, and reaction gas in the gas supply device enters the reaction cavity through the gas spraying device.
15. A heater assembly for a plasma processor as recited in claim 14, wherein,
the gas spraying device comprises a mounting substrate and a gas spraying head, the gas spraying head is connected to the lower portion of the mounting substrate, a gas buffering component is arranged on the inner side of the mounting substrate, and the set space is at least a part of gap between the outer side wall of the gas buffering component and the inner side wall of the mounting substrate.
16. A heater assembly for a plasma processor as recited in claim 15, wherein,
the heater assembly further comprises a heat transfer gasket connected to the base and the gas shower respectively.
17. A heater assembly for a plasma processor as recited in claim 16, wherein,
at least a part of the bottom of the base body is fixedly connected with the heat transfer gasket and the mounting substrate through screws.
18. A plasma processor, characterized by comprising a reaction chamber, wherein an electrostatic chuck is arranged in the reaction chamber and used for supporting a wafer, a base is arranged below the electrostatic chuck and used for bearing the electrostatic chuck, a gas spraying device is arranged at the upper part of the reaction chamber and connected with a gas supply device, reaction gas in the gas supply device enters the reaction chamber through the gas spraying device, and the gas spraying device in the plasma processing is subjected to temperature control through the heater assembly according to any one of claims 1-17, so that the gas spraying device reaches a target temperature.
Priority Applications (2)
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| CN201910899771.1A CN112542370B (en) | 2019-09-23 | 2019-09-23 | Plasma processor and heater assembly thereof |
| TW109127268A TWI771735B (en) | 2019-09-23 | 2020-08-12 | A plasma processor and its heater assembly |
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| CN201910899771.1A CN112542370B (en) | 2019-09-23 | 2019-09-23 | Plasma processor and heater assembly thereof |
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| TW202113916A (en) | 2021-04-01 |
| CN112542370A (en) | 2021-03-23 |
| TWI771735B (en) | 2022-07-21 |
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