KR20040076433A - Apparatus for manufacturing semiconductor devices - Google Patents

Abstract

PURPOSE: An apparatus for fabricating a semiconductor device is provided to heat easily a source gas such as an oxygen gas or a nitrogen gas without an additional heater by using the high heat generated from a susceptor. CONSTITUTION: A susceptor(220) is installed in an inside of a process chamber(210). A semiconductor substrate is loaded on a surface of the susceptor and is heated while a process is performed. An injection unit(230) is installed at an opposite position to the susceptor in the inside of the process chamber. The first supply tube(242) is used for supplying the first source gas to the process chamber. A heating tube(250) is connected to the first supply tube and is installed around the susceptor.

Description

Semiconductor device manufacturing device {APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICES}

The present invention relates to an apparatus for manufacturing a semiconductor device, and more particularly, to an apparatus for depositing a predetermined material on a semiconductor wafer.

In general, a plurality of processes, such as an ion implantation process, a deposition process, a photo process, and an etching process, are required to manufacture a semiconductor device. Among these processes, a deposition process is a process of forming a uniform film on a wafer, which includes chemical vapor deposition and physical vapor deposition. Recently, an organic metal chemical vapor deposition (MOCVD) apparatus using a volatile organometallic compound as a precursor for depositing metal oxide thin films used for high-k dielectric thin films, ferroelectric thin films, superconducting thin films, and electrodes on a wafer. Is mainly used.

1 is a view schematically showing a general MOCVD equipment. Referring to FIG. 1, the MOCVD apparatus has a susceptor 160 and a showerhead 140 positioned to face each other in the process chamber 120 and the process chamber 120. The semiconductor substrate W, such as a wafer, is placed on the susceptor 160 provided with a heater (not shown) therein. The shower head 140 is connected to a pipe 182 to which a first source gas, which is an organic metal precursor, and a pipe 184 to which a second source gas such as oxygen, nitrogen, and ammonia are supplied. In general, the first source gas is supplied to the shower head 140 in a state heated to a temperature that does not re-liquefy or pyrolyzes, and the second source gas is supplied to the shower head 140 at room temperature.

The wafer W is heated to a process temperature of about 500 ° C. higher than the decomposition temperature of these source gases, and the first source gas and the second source gas are injected downward through the injection hole 142 of the shower head 140. As a result, deposition is performed on the wafer W. In the case of deposition by the atomic layer deposition method, the first source gas, the purge gas, and the second source gas may be sequentially supplied to deposit a predetermined film quality on the wafer (W).

However, such a general MOCVD equipment has the following problems. Since the deposition of the source gas occurs when the wafer W is heated to a temperature of 500 ° C. or more, the temperature of the heater of the susceptor 160 rises to about 600 ° C. or more. Therefore, the temperature of the outer wall of the process chamber 120 and the shower head 140 is heated to a temperature higher than the decomposition temperature of the source gas, so that the source gases are decomposed in advance and deposited on the outer wall of the process chamber 120 and the shower head 140. Done. And the outer wall of the process chamber 120 is heated to a high temperature damages the equipment and jeopardizes the safety of the operator. In addition, the first source gas is supplied to the shower head 140 while being heated to a predetermined temperature, while the second source gas is supplied to the shower head 140 at room temperature, and thus, due to the temperature difference between the source gases, Disturbance occurs and the reaction is vulnerable.

An object of the present invention is to solve the above-described problems and to provide a semiconductor manufacturing apparatus capable of smoothly depositing a source gas on a wafer.

1 is a cross-sectional view of a typical MOCVD apparatus;

2 is a sectional view of a MOCVD apparatus according to a first embodiment of the present invention;

3 is a cross-sectional view showing a modified example of the MOCVD apparatus of FIG.

4 is a sectional view of a MOCVD apparatus according to a second embodiment of the present invention;

5 is a perspective view of the heating tube and liner of FIG. 4;

6 is a sectional view showing a modified example of the MOCVD apparatus of FIG. 4; and

FIG. 7 is a perspective view of the heating tube and the liner of FIG. 6.

Explanation of symbols on the main parts of the drawings

210: process chamber 220: susceptor

230: injection unit 242: first supply pipe

244: second supply pipe 250, 350: heating pipe

In order to achieve the above object, the semiconductor manufacturing apparatus according to the present invention comprises a process chamber, a susceptor on which a semiconductor substrate is placed and heated to a high temperature during a process, an injection unit facing the susceptor in the process chamber, and a process chamber. A first supply pipe for supplying one source gas, and a heating pipe connected to the first supply pipe and passing around the high temperature susceptor and heated by the high temperature susceptor. The heating tube has a first heating part formed in a coil shape to surround the susceptor.

In example embodiments, the first heating part is formed from below the sidewall of the process chamber to an upper portion of the sidewall of the process chamber and is inserted into an outer wall of the process chamber. In addition, the heating tube has a second heating part located in the lower wall of the process chamber and connected to the first supply pipe, and a third heating part located in the upper part of the process chamber and connected to the injection part. The second heating part is formed in a spiral shape in which the radius is gradually larger on the same plane from the center of the lower wall of the process chamber, and the third heating part is formed in a spiral shape in which the radius is gradually smaller.

In another example, the first heating unit is located between the susceptor and the outer wall of the process chamber surrounding the susceptor in a coil shape, the heating to prevent the process by-products attached to the first supply pipe A liner positioned between the first heating portion of the tube and the susceptor is inserted. The heating tube has a third heating unit extending from the first heating unit and surrounding the injection unit in a coil shape.

In addition, the semiconductor manufacturing apparatus is an organometallic chemical vapor deposition apparatus, further comprising a second supply pipe for supplying a second source gas to the injection unit. The first source gas is a gas introduced into the process chamber at room temperature, and the second source gas is an organic metal gas introduced into the process chamber while heated to a predetermined temperature.

Hereinafter, embodiments of the present invention will be described in more detail with reference to FIGS. 2 to 7. In the drawings, the same reference numerals are given to components that perform the same function. The embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited by the embodiments described below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Therefore, the shape of the elements in the drawings are exaggerated to emphasize a clearer description.

In the following example, an METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) apparatus is described as an example, but the apparatus places all the wafers in a hot susceptor and needs to provide a heated process gas. It can be used in semiconductor manufacturing apparatus.

In addition, the apparatus of the present invention can be used in both chemical vapor deposition method of introducing source gases into the process chamber at the same time or atomic layer deposition method of introducing the source gases into the process chamber sequentially.

2 is a schematic cross-sectional view of an organometallic chemical vapor deposition according to a first embodiment of the present invention. Referring to FIG. 2, the MOCVD apparatus includes a process chamber 210, a susceptor 220, a showerhead 230, a first supply pipe 242, and a first supply pipe 242. A second supply pipe 244, and a heat pipe 250.

The susceptor 220 is a portion on which the wafer W is placed and is disposed on the bottom surface of the process chamber 210. In order to maintain the inside of the process chamber 210 above the decomposition temperature of the source gas and to heat the wafer W to a high temperature to facilitate the deposition of the source gases on the wafer W, the susceptor 220 may have a heater. (Not shown) is installed. Since the wafer W is usually heated to 500 ° C or more, the susceptor is raised to 600 ° C or more by a heater.

In the upper portion of the process chamber 210, an injection part 230 such as a shower head installed to face the susceptor 220 is positioned. The injection unit 230 is a portion for injecting the source gases introduced into the process chamber 210 downwardly and is coupled to the upper surface of the process chamber 210.

An exhaust line 246 is formed on one side or the bottom of the process chamber 210 to maintain the inside of the process chamber at a constant process pressure and to exhaust the remaining residues after deposition. The pump 247 is connected to the exhaust line 246.

The injection part 230 has a first inlet part 231 located at the top and a second inlet part 232 located at the bottom. The first injection plate 237 is positioned between the first inlet 231 and the second inlet 232 to separate the first inlet 231 and the second inlet 232, and the second inlet 232. A second spray plate 238 is formed below 232. A plurality of first holes 233 are formed in the first spray plate 237, second holes 234 are formed in positions corresponding to the first holes in the second spray plate 238, and second holes are formed in the second spray plate 238. Third holes 235 are formed between the 234. Injection pipes 236 are inserted into the first and second holes 233 and 234.

The first inlet 231 is a portion into which the first source gas is introduced, and the first source gas is a gas existing in a gaseous state at room temperature. The first source gas is a gas such as oxygen (O ₂ ) when the film to be deposited on the wafer (W) is an oxide, and a gas such as nitrogen (N ₂ ) or ammonia (NH ₃ ) in the case of a nitride film. The second inlet 232 is a portion into which the second source gas is introduced, and the second source gas has a low vapor pressure and is a substance present in a liquid / solid state at room temperature and is heated at an appropriate temperature to the injection unit 230. Metal organic precursors gas supplied to the (metal organic precursors gas).

The first source gas is supplied from the first source gas source (not shown) to the process chamber 210 through the first supply pipe 242 at room temperature, and then heated to a constant temperature through the heating tube 250. It is supplied to the first inlet 231. The second source gas is supplied from the second source gas source (not shown) to the second inlet 232 through the second supply pipe 244 while being heated to a temperature that does not reliquefy or pyrolyze. Although not shown, the second source gas source includes a liquid source material supply and a vaporizer for vaporizing the liquid source material. The first supply pipe 242 is connected to one end of the heating pipe 250 located in the bottom wall 212 of the process chamber 250, and the second supply pipe 244 is connected to the top wall 256 of the process chamber 250. It is directly connected to the second inlet 232 of the injection unit 230 through. However, unlike this, the heating tube 250 may be connected to the second inlet 236, and the second supply tube 244 may be connected to the first inlet 231.

As shown in FIG. 3, which shows a modified example of FIG. 2, the injection part 330 may have only one inlet part 331 and one injection plate 332. In this case, the first source gas and the second source gas are supplied to the same inlet 331, and are injected downward through holes 334 formed in the injection plate 332 under the inlet 331.

The heating tube 250 is a tube for guiding the first source gas introduced through the first supply pipe 242 to the first inlet 231. The heating tube 250 is installed to pass around the high temperature susceptor 220 so that the first source gas flowing therein is heated to a predetermined temperature. The heating tube 250 has a first heat part 252, a second heat part 254, and a third heat part 256. The first heating unit 252 and the second heating unit 254 are portions for allowing the first source gas flowing therein to be heated to a predetermined temperature by heat emitted from the susceptor 220. The first heating unit 252 is a portion inserted into the sidewall 214 of the process chamber 210 and is formed from the bottom of the sidewall 214 to the top of the sidewall 214 in a coil shape. The second heating unit 254 extends from one end of the first heating unit 252 and is connected to the first supply pipe 242. The second heating part 254 is inserted into the lower wall 212 of the process chamber 210 and is formed in a shape in which the radius gradually decreases from the edge of the lower wall 212 toward the center of the lower wall 212. The third heating unit 256 is a portion for heating the first source gas flowing through the heating tube 250 or cooling the injection unit 230 to a predetermined temperature by using the heat of the injection unit 230. The third heating unit 256 extends from the other end of the second heating unit 254 and has a shape in which a radius gradually decreases in the outer portion of the injection unit 230 and the first inlet unit 231 of the injection unit 230. Connected with

In the apparatus having the above-described structure, the susceptor 220 is maintained at a high temperature of 600 ° C or more. Thereafter, the first source gas is supplied to the process chamber 210 through the first supply pipe 242 at room temperature. The first source gas introduced into the process chamber 210 flows through the heating tube 250 and is heated to a predetermined temperature by heat emitted from the susceptor 220. Is supplied. In addition, the second source gas, which is a precursor gas, is heated to an appropriate temperature such that it is not liquefied or decomposed and flows into the second inlet 232 of the injection unit 230 through the second supply pipe 244. The first source gas supplied to the first inlet 231 is injected below the injection unit 230 through the injection pipe 236, and the second source gas supplied to the second inlet 232 is the second injection. It is sprayed down through the third holes 234 of the plate 238. These source gases are deposited on the wafer W after being decomposed and recombined by a high temperature heater, and the residues remaining after the deposition are exhausted to the outside through the exhaust pipe 246. On the susceptor 220 may be mounted a sensor (not shown) for measuring the temperature of the wafer (W). Therefore, if the wafer W has a temperature lower than a process temperature for deposition due to heat exchange with the heating tube 250, it may be maintained by the heater.

In a typical MOCVD apparatus, the process chamber 210 and the injection unit 230 are maintained at a high temperature higher than the decomposition temperature of the source gas by the heat emitted from the heater. Therefore, source gases are decomposed around the outer wall of the process chamber 210 and then deposited on the outer wall of the process chamber 210. However, according to the present invention, the heat emitted from the susceptor 220 to the side wall 214 of the process chamber 210 heats the first source gas flowing through the first heating unit 252 and the second heating unit 254. Since the outer wall of the process chamber 210 is maintained at a lower temperature than the general case, the above-described problems can be minimized. Since the heat exchange is performed between the injection unit 230 heated to a high temperature and the third heating unit 256 through which the first source gas flows, source gas is decomposed around the injection unit 230 and then deposited on the injection unit 230. Can be minimized.

In addition, in the general MOCVD apparatus, the second source gas is introduced into the injection unit 230 while heated to a predetermined temperature, whereas the first source gas is introduced into the injection unit 230 at a normal temperature, and thus, a large temperature between source gases. The reaction is vulnerable due to thermal disturbance due to the difference. However, in the present invention, the first source gas is supplied to the injection unit 230 while being heated to a constant temperature by the heat emitted from the susceptor 220, and thus the second source gas. The difference between the gas and the temperature is not so large that the reaction for forming the thin film is activated.

According to the present invention, there is no need to provide a separate heating device for heating the first source gas or a separate cooling device for cooling the outer wall of the process chamber 210 and the injection unit 230. However, if necessary, separate heating and cooling devices may be installed.

4 is a cross-sectional view illustrating a MOCVD apparatus according to a second embodiment of the present invention, and FIG. 5 is a view between the heating tube and the liner of FIG. 4.

Referring to FIG. 4, the MOCVD apparatus includes a process chamber 210, an injection unit 230, a susceptor 220, a first supply pipe 242, a second supply pipe 244, and a heating tube 350. . The detailed description of the same components as those of the first embodiment will be omitted, and the heating tube 350 having a structure different from that of the first embodiment will be described.

Referring to FIG. 5, the heating tube 350 has a first heating unit 352, a transfer unit 354, and a third heating unit 356. The first heating unit 352 is connected to the first supply pipe 242 and is disposed between the sidewall 214 of the process chamber 210 and the susceptor 220. The first heating unit 352 is installed to surround the susceptor 220 in a coil shape from a bottom surface of the process chamber 210 to a position of an upper surface of the susceptor 220. The transfer part 354 extends from the first heating part 352 and is formed in a straight line to an upper portion of the process chamber 210. The third heating part 356 extends from the transfer part 354 to exchange heat with the injection part 230, and is connected to the first inlet part 231. As shown in FIG. 5, the third heating part 356 has a spiral structure in which the radius gradually decreases inward on the same plane.

FIG. 6 is a cross-sectional view showing a modified example of the MOCVD apparatus of FIG. 4, and FIG. 7 is a view between the heating tube and the liner of FIG. 6. 6 and 7, the third heating unit 356 of the heating tube 350 is coiled from the second injection plate 238 to the first inlet 231 of the injection unit 230, unlike FIG. It may have a structure surrounding the injection unit 230 in the shape.

In the second embodiment, since the length of the transfer part 354 affects the temperature of the first source gas, the length of the transfer part 354 may be long or short, and the first heating part 352 may be provided without the transfer part 354 according to the process conditions. May extend in a coil shape to the injection unit 230.

In the second embodiment, since the heating tube 350 is located inside the inner wall of the process chamber 210, source gases are deposited on the heating tube 350. In this case, since the cleaning cycle of the heating tube 350 is shortened, a cylindrical liner 260 is installed inside the first heating unit 352 of the heating tube 350. The first heating unit 352 may be formed at a position close to the inner wall of the process chamber 210, and the liner 260 may be positioned adjacent to the inner side of the first heating unit 352. However, unlike this, the first heating unit 352 is positioned to be spaced apart from the inner wall of the process chamber 210 by a predetermined distance, and the liner 260 may be installed inside and outside the first heating unit 352, respectively.

According to the present invention, since the heating of the source gas, such as oxygen or nitrogen, to prevent the formation of thermal vortex in the process chamber is made by the high temperature heat emitted from the susceptor, the equipment structure is simple and the equipment maintenance is easy without additional heating device. Has an easy effect.

In addition, since a part of the high temperature heat emitted from the susceptor is used to heat the source gas, there is an effect that can prevent the process chamber and the injection portion from being deteriorated without using an additional cooling device.

Claims (13)

In the apparatus for manufacturing a semiconductor device, A process chamber; A susceptor located in the process chamber and in which a semiconductor substrate is placed and heated to a high temperature during the process; An injection unit facing the susceptor in the process chamber; A first supply pipe supplying a first source gas to the process chamber; and And a heating tube connected to the first supply tube and passing around the susceptor at a high temperature. The method of claim 1, And the heating tube has a first heating part formed in a coil shape so as to surround a circumference of the susceptor. The method of claim 2, And the first heating unit is inserted into an outer wall of the process chamber. The method of claim 3, wherein And the first heating portion is formed from below the sidewall of the process chamber to an upper portion of the sidewall of the process chamber. The method of claim 4, wherein The heating tube, And a helical second heating portion located in the lower wall of the process chamber and connected to the first supply pipe and gradually increasing in radius on the same plane from the center of the lower wall of the process chamber. The method of claim 2, And the heating tube further has a helical third heating portion which is located at the top in the process chamber and is connected to the spraying portion and whose radius is gradually smaller. The method of claim 2, And the first heating part is located between the outer wall of the process chamber and the susceptor. The method of claim 7, wherein And the first heating part surrounds the circumference of the susceptor in a coil shape. The method of claim 8, The heating tube, And a third heating unit extending from the first heating unit and surrounding the injection unit in a coil shape. The method of claim 8, And the semiconductor device manufacturing apparatus further comprises a liner positioned between the first heating portion of the heating tube and the susceptor to prevent process by-products from adhering to the first supply pipe. The method of claim 1, The semiconductor device manufacturing apparatus further comprises a second supply pipe for supplying a second source gas to the injection unit. The method of claim 11, The semiconductor manufacturing apparatus is an organic metal chemical vapor deposition (METAL ORGANIC CHEMICAL VAPOR DEPOSITION: MOCVD) apparatus, characterized in that the semiconductor device manufacturing apparatus. The method of claim 12, Wherein the first source gas is a gas introduced into the process chamber at a room temperature, and the second source gas is an organic metal gas introduced into the process chamber while heated to a predetermined temperature. Device manufacturing apparatus.