JP5173992B2 - Deposition equipment - Google Patents

Description

  The present invention relates to a film forming apparatus, and more particularly to a film forming apparatus that forms a thin film on a target object by supplying a processing gas while placing the target object on a mounting table and heating the target object.

  In recent years, the use of a PZT film has attracted attention as a memory capacitor material of a planar stack type FeRAM, and a technique for generating a high-quality PZT film in a short time is being developed.

The PZT film which is a multi-component metal oxide thin film is a crystal film having a perovskite structure of Pb (Zr _1-x Ti _x ) O ₃ . In general, the PZT film is produced by causing a gas of an organometallic material and, for example, NO ₂ as an oxidant to react with each other by a CVD apparatus and depositing it on a substrate that is an object to be processed. When supplying a raw material with a liquid raw material supply apparatus, as an organic metal material, for example, Pb (DPM) ₂ , Zr (Oi-Pr) ₂ (DPM) _2, or Zr (Oi-Pr) (DPM) ₃ Alternatively, a combination of Zr (DPM) ₄ and Ti (Oi-Pr) ₂ (DPM) ₂ is used.

  Such a PZT film is generally formed on a substrate using chemical vapor deposition (CVD). That is, a base is disposed in a processing chamber of a CVD apparatus, and a processing gas (Pb, Zr, Ti raw material gas) and an oxidant gas are supplied to the substrate while heating the base (see, for example, Patent Document 1).

  The substrate is mounted on a mounting table in the processing chamber, and a heating device such as a heater is incorporated in the mounting table. At this time, oxides of Pb, Zr, and Ti adhere to and deposit on the surface of the mounting table, particularly in a region other than the region where the substrate is mounted. In the case where replacement of the mounting table is difficult in terms of structure and cost, in order to prevent the oxide of Pb, Zr, Ti from adhering to the mounting table surface in this way, a flat surface covering the surface of the mounting table is used. A member (cover plate) was attached, and the oxide was deposited thereon. On the other hand, when replacement of the mounting table is relatively easy in terms of structure and cost, the mounting table (susceptor) itself is periodically replaced. The cover plate or susceptor to which the oxide is deposited can be reused by washing it to remove unwanted oxide.

International Publication No. 02/37548 Pamphlet

  When the cover plate is provided as described above, the oxide can be prevented from being deposited on the surface of the mounting table, but instead, the oxide is deposited on the cover plate. When the amount of oxide deposited on the cover plate increases, the deposit may form a convex portion, and the substrate may ride on the convex portion. That is, when the substrate is transported, there is a possibility that the placement position is slightly shifted due to the accuracy problem of the transport device, and if the convex portion is formed at a shifted position, the substrate rides on the convex portion.

  FIG. 1 is a side view of a mounting table disposed in a conventional processing chamber, and FIG. 2 is an enlarged view of a portion A shown in FIG. As shown in FIG. 1, the cover plate 4 is attached so as to cover the surface of the mounting table 2 in which the heater is incorporated, and the substrate W is mounted on the cover plate 4. The outer peripheral portion of the cover plate 4 is covered with a guide ring 6.

  The guide ring 6 is configured to cover the periphery of the area on the cover plate 4 where the substrate W is placed. A clearance of about 0.5 mm to 1 mm is provided between the inner periphery of the guide ring 6 and the outer periphery of the substrate W. Therefore, the surface of the cover plate 4 is exposed at this clearance portion.

  The exposed portion of the cover plate 4 is at the same temperature as or higher than that of the substrate W, and the above-mentioned oxide is deposited on this portion. When the amount of deposited oxide increases, as shown in FIG. 2, the convex portion 8 is formed on the cover plate 4, and when the substrate W is placed on the cover plate 4, there is a problem of accuracy of the transfer device. When the mounting position of the substrate W slightly deviates from, the substrate W rides on the convex portion 8. As a result, the substrate W is inclined to form a gap between the substrate W and the cover plate 4, and the temperature distribution of the substrate W becomes nonuniform. As a result, the processing on the substrate W becomes non-uniform, and the in-plane distribution of the PZT film becomes non-uniform. In addition, there is a possibility that how the substrate W rides on the convex portion 8 changes every time the substrate is transported. In this case, the reproducibility of the PZT film is deteriorated. Furthermore, the back surface of the substrate W may be contaminated by the oxide.

  In order to prevent the above problems, it is necessary to frequently remove the oxide deposited on the exposed portion of the cover plate 4. The following two methods are listed as specific methods for removing the oxide.

  First, the cover plate 4 is removed from the processing chamber, and the oxide is dissolved with a chemical such as nitric acid to perform chemical cleaning. However, in order to replace the cover plate 4 attached to the mounting table 2, the temperature of the processing chamber is lowered to room temperature (a temperature that does not cause a burn even if a worker touches it), and the inside of the processing chamber is opened to the atmosphere. Must. It takes a long time to lower the temperature of the processing chamber to room temperature, and replacement of the cover plate 4 is a troublesome operation. Further, even if an attempt is made to reproduce the previous processing conditions after the processing chamber is lowered to room temperature and opened to the atmosphere, the environment in the processing chamber changes slightly, and there are different characteristics before and after replacement of the cover plate 4. Another problem is that a PZT film is produced. In addition, this method cannot be used when the cover plate 4 is made of a material that cannot withstand the cleaning chemical.

Second, the cover plate 4 is kept in a predetermined temperature while being installed in the processing chamber, and a cleaning gas is allowed to flow in the processing chamber to deposit on the cover plate by an In-Situ dry cleaning process. This is a method for chemically removing substances. When the constituent elements of the deposited oxide are converted into halides, oxides, hydrates, or organic complexes by chemical reaction, their vapor pressure is sufficiently high at a given temperature to become gaseous and completely It is a condition for dry cleaning that the exhaust gas can be exhausted and the exhaust gas does not have strong toxicity. However, metal oxides such as PZT (for example, high-ferroelectric materials such as BST, SBT, and BLT) And high-temperature superconductors such as RE-Ba-Cu-O system (RE is a rare earth element), Bi-Sr-Ca-Cu-O system, Tl-Ba-Ca-Cu-O system, Al ₂ O ₃ , and the gate insulating film such as _{HfO 2, ZrO 2, RuO 2} , IrO 2, in such an oxide electrode can be mentioned), such as SrRuO system is rarely satisfying such conditions, effective de It is actual situation that is very difficult to implement Lee cleaning process. Assuming that the PZT deposit could be removed, the environment in the processing chamber changed slightly even if it was attempted to reproduce the previous processing conditions as described above, and PZT having different characteristics before and after dry cleaning was performed. There is also a problem that is generated.

  Furthermore, there are two types of substrates W such as semiconductor wafers to be processed: those having an orientation flat (referred to as an orientation flat) for recognizing the direction of a disk-shaped substrate and those having a notch. . FIG. 3 is a plan view showing a substrate having an orientation flat and a substrate having a notch in an overlapping manner. The orientation flat WF is formed by cutting out a part of the outer periphery of the substrate in a straight line. On the other hand, the notch WN is formed by making a small cut in a part of the outer periphery of the substrate. Therefore, the area S1 removed by the orientation flat WF is much larger than the area S2 removed by the notch WN. When such two types of substrates W are processed by the same film forming apparatus, the above-described oxide deposition may be a problem.

  For example, a problem occurs when the substrate W having the notch WN is processed after the oxide is deposited on the portion corresponding to the orientation flat of the mounting table by processing the substrate W having the orientation flat WF to some extent. Since the portion corresponding to the orientation flat WF of the mounting table is not covered with the substrate W and is exposed, the oxide is deposited as described above. Here, when the substrate W having the notch WN is mounted on the mounting table, as shown in FIG. 4, the convex portion 8 formed by depositing oxide on a portion corresponding to the orientation flat of the cover plate 4 (mounting table). The board | substrate W which has the notch WN will run on top. As a result, a part of the substrate W is placed in a tilted state, the temperature distribution of the substrate W becomes nonuniform, the in-plane uniformity of film formation deteriorates, the reproducibility of film formation deteriorates, Problems such as backside contamination occur.

  The present invention has been made in view of the above points, and provides a film forming apparatus that can be used without causing problems until a certain amount of oxide is deposited on a member on which an object is placed. The purpose is to do.

  As a technique for solving the above-described problem, a film forming apparatus that forms a film on a target object while supplying a processing gas to the target object, and has a placement region on which the target object is placed The mounting member has a substantially planar mounting member, and the mounting member has a recess that extends along the outer periphery of the object to be processed when the object to be processed is mounted on the mounting region. There is provided a film forming apparatus characterized by being equal to or smaller than the outer periphery of the placement region.

  In the above-described technique, it is preferable that the object to be processed is a substantially circular substrate, and the recess is an annular groove formed so as to extend along the outer periphery of the substrate. Moreover, it is good also as having a heating means for maintaining the to-be-processed object mounted in the predetermined temperature by heating a mounting member. Furthermore, it has an annular member which covers the outer part of the mounting area | region of a mounting member, and the inner periphery of an annular member is good also as being the same as the outer periphery of a recessed part, or smaller than an outer periphery.

  According to the above-described technique, the outer edge of the object to be processed is slightly protruded into the recess while the object to be processed is mounted on the mounting member. Further, the inner edge of the annular member is slightly protruded into the recess. As a result, the surface of the mounting member is completely covered with the object to be processed and the annular member, and only the bottom surface and the inner wall of the concave portion of the mounting member become a surface on which the oxide can adhere and be deposited. . Therefore, no oxide is deposited on the surface of the mounting member, and the oxide stays inside the recess until the oxide is deposited in the recess to some extent, and the object to be processed rides on the deposited oxide. There is no.

  According to the present invention, there is also provided a film forming apparatus for forming a film on the object to be processed while supplying a processing gas to the object to be processed, the mounting apparatus having a mounting region on which the object to be processed is mounted. A member having a central portion that defines the placement region and an outer peripheral portion extending around the central portion, wherein the outer peripheral portion projects from the outer peripheral portion. A mounting member having a thickness smaller than the portion, and an annular member formed in an annular shape so as to surround the outer periphery of the central portion and the object to be processed and to cover the surface of the outer peripheral portion. The back surface of the annular member facing the outer peripheral portion of the mounting member, the surface of the outer peripheral portion of the mounting member facing the back surface of the annular member, and the back surface opposite to the surface of the outer peripheral portion of the mounting member Heat reflection processing for reflecting heat rays is performed on at least one of the surfaces Is provided. In the above-described film forming apparatus, a metal film may be formed by the heat reflection process.

  According to the present invention, there is also provided a film forming apparatus for forming a film on the object to be processed while supplying a processing gas to the object to be processed, the mounting apparatus having a mounting region on which the object to be processed is mounted. A member having a central portion that defines the placement region and an outer peripheral portion extending around the central portion, wherein the outer peripheral portion projects from the outer peripheral portion. A mounting member having a thickness smaller than the portion, and an annular member formed in an annular shape so as to surround the outer periphery of the central portion and the object to be processed and to cover the surface of the outer peripheral portion. There is provided a film forming apparatus characterized in that a part of the back surface of the mounting member is processed to have a higher heat absorption rate than the material forming the mounting member. In the above-described processing apparatus, the part of the back surface of the placement member may be a position corresponding to the outer peripheral surface of the central portion.

  Further, as a related technique, a film forming apparatus for forming a film on a target object while supplying a processing gas to the target object, wherein the mounting member has a mounting region on which the target object is mounted. A central portion defining the placement region and an outer peripheral portion extending around the central portion, the outer peripheral portion being more than the central portion so that the central portion protrudes from the outer peripheral portion. A mounting member having a small thickness; and an annular member formed in an annular shape so as to surround the outer periphery of the central part and the object to be processed and to cover the surface of the outer peripheral part. A processing apparatus is provided in which a plurality of positioning pins arranged circumferentially are provided between the inner peripheral surface and the outer peripheral surface of the central portion of the placement member. In the above processing apparatus, a notch is provided in the inner peripheral surface of the annular member, a part of the positioning pin is accommodated in the notch, and the remaining portion is directed inward from the inner peripheral surface of the annular member. A processing apparatus is provided, which is arranged in a protruding state.

  In the processing apparatus according to the present invention described above, the film formed on the object to be processed is a metal oxide thin film, and the gas supply means supplies the processing gas and the oxidizing gas into the processing chamber in which the mounting member is disposed. It is good also as having. The metal oxide may be a PZT film generated by reacting a mixed gas of Pb source gas, Zr source gas, Ti source gas and an oxidizing gas. Alternatively, the metal oxide thin film may be a BST film, an SBT film, or a BLT film. Here, BST represents an oxide containing Ba, Sr and Ti, SBT represents an oxide containing Sr, Bi and Ta, and BLT represents an oxide containing Bi, La and Ti. .

Further, the mounting member is a material mainly composed of aluminum nitride (AlN), alumina (Al ₂ O ₃ ), silicon carbide (SiC), quartz (SiO ₂ ), silicon nitride (Si ₃ N ₄ ), or amorphous carbon. It is good also as forming by.

  As described above, according to the present invention, in the mounting member on which the object to be processed is mounted, the portion where the oxide can be deposited is formed as the concave portion. The mounting member can be used continuously for a long time. Accordingly, the frequency of stopping the operation of the film forming apparatus for replacement / cleaning of the mounting member can be reduced, and an environment for performing a film forming process with a constant quality can be maintained for a long time.

  Moreover, the surface temperature of the annular member can be lowered by applying heat reflection processing to the unnecessary surface or back surface of the mounting member, or the back surface of the annular member that covers the outer peripheral portion of the mounting member. Can be prevented from adhering.

  Furthermore, on the back surface of the mounting member, by providing a member having a high heat absorption rate at a position corresponding to the outer periphery of the central portion of the mounting member, the vicinity of the outer periphery of the central portion can be selectively and strongly heated, The temperature reduction of the outer edge part of the to-be-processed object mounted on the mounting member can be suppressed, and the whole to-be-processed object can be heated to uniform temperature.

  Further, by providing the positioning pin inside the annular member, the object to be processed comes into contact with only the positioning pin, not the annular member, and the temperature drop at the contact portion of the object to be processed can be suppressed. The temperature reduction of the outer edge part of the to-be-processed object mounted on the top can be suppressed, and the whole to-be-processed object can be heated to uniform temperature.

It is a side view of the mounting base arrange | positioned in the conventional process chamber. It is an enlarged view of the A section shown in FIG. It is a top view which shows the board | substrate which has an orientation flat, and the board | substrate which has a notch in piles. It is sectional drawing which shows the state which the board | substrate which has a notch mounts on the convex part formed in the part corresponded to the orientation flat of a mounting base. 1 is an overall configuration diagram of a film forming apparatus according to a first embodiment of the present invention. It is sectional drawing of the processing chamber shown in FIG. It is an expanded sectional view of a cover plate and a guide ring. It is a top view of the part in which the recessed part of the cover plate was formed. It is sectional drawing of the process chamber provided in the film-forming apparatus by 2nd Example of this invention. It is sectional drawing which shows a part of 1st modification of the cover plate shown in FIG. It is sectional drawing which shows a part of 2nd modification of the cover plate shown in FIG. It is sectional drawing which shows the structure which provided the level | step difference in the inner peripheral part of the cover plate in the structure shown in FIG. It is sectional drawing which shows the structure which attached the pin for wafer positioning to the circumference | surroundings of the mounting area | region of a wafer. It is sectional drawing which shows a part of 3rd modification of the cover plate shown in FIG. It is sectional drawing of the susceptor and cover ring which are provided in the film-forming apparatus by 3rd Example of this invention. It is sectional drawing which shows the modification of a susceptor shown in FIG. It is sectional drawing of the susceptor and cover ring which are provided in the film-forming apparatus by 4th Example of this invention. It is sectional drawing which shows the state which increased the distance of the space | gap between a susceptor and a cover ring. It is sectional drawing of the susceptor and cover ring which are provided in the film-forming apparatus by 5th Example of this invention. It is sectional drawing which shows the state which increased the thickness of the outer peripheral part of a susceptor. It is sectional drawing of the susceptor and cover ring which are provided in the film-forming apparatus by 6th Example of this invention. It is sectional drawing of the susceptor and cover ring which are provided in the film-forming apparatus by 7th Example of this invention. It is the top view which looked at the circumference | surroundings of the positioning pin shown by FIG. It is sectional drawing which shows the example which has arrange | positioned the cyclic | annular positioning member with a triangular cross section between the cover ring and the center part of a susceptor.

  Next, embodiments of the present invention will be described with reference to the drawings.

  FIG. 5 is an overall configuration diagram of the film forming apparatus according to the first embodiment of the present invention. The film forming apparatus shown in FIG. 5 is a PZT film forming apparatus that generates a PZT film by a CVD method.

  The PZT film forming apparatus shown in FIG. 5 includes a processing chamber 12, a shower head 14, an exhaust trap 16, a vacuum pump 18, and a gas supply device 20.

  In the processing chamber 12, a mounting table 12a (see FIG. 6) for mounting the wafer W is provided. A heater is embedded in the mounting table 12a, and the wafer W that is an object to be processed mounted on the mounting table 12a is heated to a predetermined processing temperature. The processing chamber 12 is connected to an exhaust trap 16 via an exhaust pipe 12 b and further connected to a vacuum pump 18. The gas in the processing chamber 12 is exhausted by the exhaust trap 16 and the vacuum pump 18 to maintain a predetermined degree of vacuum.

  The shower head 14 is provided on the upper part of the processing chamber 12 so as to face the mounting table 12a, and supplies a raw material gas and an oxidizing gas into the processing chamber 12 as a processing gas.

  A gas supply device 20 shown in FIG. 5 is a device for supplying a raw material gas to the shower head 14. Although not shown here, the oxidizing gas is also supplied to the shower head 14. The gas supply device 20 stores a Pb solution raw material tank 22 for storing a Pb raw material dissolved in a solvent, a Zr solution raw material tank 24 for storing a Zr raw material dissolved in a solvent, and a Ti raw material dissolved in a solvent. And a Ti solution raw material tank 26. In this embodiment, butyl acetate is used as the solvent.

Here, the Pb solution raw material is a liquid material produced by dissolving the Pb raw material in butyl acetate as a solvent, and the Zr solution raw material is a liquid material produced by dissolving the Zr raw material in butyl acetate as a solvent. The Ti solution raw material is a liquid material produced by dissolving a Ti raw material in butyl acetate as a solvent. In this embodiment, butyl acetate is used as a solvent, but the present invention is not limited to this, and other solvents such as tetrahydrofuran, cyclohexane, and octane may be used. For example, Pb (DPM) ₂ is used as the Pb raw material, and Zr (Oi-Pr) ₂ (DPM) ₂ or Zr (Oi-Pr) (DPM) ₃ or Zr (DPM) ₄ is used as the Zr raw material. However, as the Ti raw material, for example, Ti (Oi-Pr) ₂ (DPM) ₂ is used.

  A pressurized gas is supplied to the Pb solution raw material tank 22, and the Pb solution raw material is supplied to the Pb vaporizer 40 via the liquid mass flow controller (LMFC) 30 by the pressure. A carrier gas is supplied to the Pb vaporizer 40 via a mass flow controller (MFC) 42. The Pb solution raw material supplied to the Pb vaporizer 40 is vaporized by the carrier gas in the Pb vaporizer 40, and the Pb raw material that has become a gas is supplied to the shower head 14 through the gas supply pipe 44.

  A pressurized gas is supplied to the Zr solution raw material tank 24, and the Zr solution raw material is supplied to the Zr vaporizer 46 via the liquid mass flow controller (LMFC) 32 by the pressure. A carrier gas is supplied to the Zr vaporizer 46 via a mass flow controller (MFC) 48. The Zr solution raw material supplied to the Zr vaporizer 46 is vaporized by the carrier gas in the Zr vaporizer 46, and the Zr raw material that has become a gas is supplied to the shower head 14 through the gas supply pipe 50.

A pressurized gas is supplied to the Ti solution material tank 26, and the Ti solution material is supplied to the Ti vaporizer 52 via the liquid mass flow controller (LMFC) 34 by the pressure. A carrier gas is supplied to the Ti vaporizer 52 via a mass flow controller (MFC) 54. The Ti solution raw material supplied to the Ti vaporizer 52 is vaporized by the carrier gas in the Ti vaporizer 52, and the Ti raw material that has become gas is supplied to the shower head 14 through the gas supply pipe 56. An inert gas such as He, Ar, or N ₂ is used as the pressurized gas and the carrier gas.

In addition to the above-described source gas supply line, an oxidizing gas supply pipe (not shown) is connected to the shower head 14, and O ₂ , O ₃ , N ₂ O, NO _{2 and the} like as the oxidizing gas are supplied to the shower head 14. Supplied.

  In the CVD apparatus configured as described above, the source gas and the oxidizing gas supplied from the shower head 14 are reacted in the processing chamber 12 to deposit a PZT film on the wafer W. The raw material supply lines are connected to a vent line 58, and when the raw material gas is unnecessary, the raw material gas can be exhausted directly to the exhaust port 12b by bypassing the shower head 14. Moreover, the part provided with the dotted line in FIG. 5 shows the part heated with a heater.

  The above-described gas supply device 20 is a so-called liquid vaporization type gas supply device that vaporizes the liquid raw material by the vaporizers 40, 46, and 52 and supplies it to the processing chamber 12, but converts the solid raw material into a gas by sublimation. Thus, a so-called solid sublimation gas supply device may be used.

  Next, the mounting table 12a disposed in the processing chamber 12 will be described with reference to FIG. FIG. 6 is a cross-sectional view of the processing chamber 12 shown in FIG.

  A mounting table 12 a is provided in the processing chamber 12 at a position facing the shower head 14. The shower head 14 is connected to gas supply pipes 44, 50, 56 and an oxidizing gas supply pipe 57, and a raw material gas and an oxidizing gas are introduced into the processing chamber 12 through the shower head 14.

The mounting table 12 a includes a mounting table main body 60, a cover plate 62, and a guide ring 64. The mounting table body 60 is a member having heat resistance such as aluminum nitride (AlN), alumina (Al ₂ O ₃ ), silicon carbide (SiC), quartz (SiO ₂ ), silicon nitride (Si ₃ N ₄ ), or amorphous carbon. And a heating element 66 such as a resistance heater is incorporated therein. The mounting table main body 60 is joined to the bottom of the processing container 12, and an internal cavity is opened to the outside of the processing chamber 12. Through this cavity, the electrode 66 a of the heating element 66 extends to the outside of the processing chamber 12.

The cover plate 62 as a mounting member is made of a heat-resistant member such as aluminum nitride (AlN), alumina (Al ₂ O ₃ ), silicon carbide (SiC), or quartz (SiO ₂ ), like the mounting table body 60. And mounted on the mounting table main body 60. The central portion of the cover plate 62 is an area where a circular substrate such as a silicon wafer W is placed as an object to be processed. In the present embodiment, a recess 62 a is provided along the outer periphery of the wafer W. In this embodiment, the recess 62a is formed as an annular groove.

  The mounting table main body 60 is heated to, for example, 600 ° C. by the heating element 66, and this heat is transmitted to the wafer W via the cover plate 62, and the wafer W is maintained at, for example, 550 ° C.

The guide ring 64 is made of a heat-resistant member such as aluminum nitride (AlN), alumina (Al ₂ O ₃ ), silicon carbide (SiC), or quartz (SiO ₂ ), like the mounting table main body 60, and the cover plate 62 This is a ring-shaped member having an L-shaped cross section so as to cover a portion outside the concave portion 62a, the outer peripheral side surface, and the outer peripheral side surface of the mounting table main body 60. The inner peripheral surface of the guide ring 64 is inclined and has an action of positioning the wafer W when the wafer W is placed on the cover plate 62.

  Next, the position and dimensions of the annular recess 62a provided in the cover plate 62 will be described with reference to FIG. FIG. 7 is an enlarged cross-sectional view of the cover plate 62 and the guide ring 64.

  The cover plate 62 has, for example, a disk shape with a thickness of about 2 mm. The depth of the recess 62a is smaller than the thickness of the cover plate 62, for example, about 0.5 mm. The recess 62a is an annular groove, and the inner peripheral diameter thereof is equal to or slightly smaller than the outer peripheral diameter of the wafer W to be placed. That is, the diameter of the circular area (area where the wafer W is placed) inside the recess 62 a is the same as or slightly smaller than the diameter of the wafer W. There is a possibility that the mounting position of the wafer W slightly shifts within the positioning allowable range of the substrate transfer apparatus. That is, each time the wafer W is placed on the cover plate 62, the placement position may slightly shift. Therefore, even when the mounting position of the wafer W is slightly shifted, the inner periphery of the recess 62a is made slightly smaller than the outer periphery of the region on which the wafer W is mounted so that the circular region inside the recess 62a is not exposed. It is preferable.

  The outer diameter of the recess 62 a is slightly larger than the inner diameter of the guide ring 64. If the guide ring 64 is accurately disposed when attached to the cover plate 62, the guide ring 64 is hardly displaced thereafter, and the surface of the cover plate 62 outside the recess 62a is not exposed. Therefore, the inner periphery of the guide ring 64 (annular member) is preferably slightly smaller than the outer periphery of the recess 62a, but may be the same in some cases.

  Therefore, in a state where the wafer W is placed on the cover plate 62, the outer edge of the wafer W slightly protrudes into the recess 62a, and the inner edge of the guide ring 64 coincides with the outer periphery of the recess 62a or slightly protrudes. It becomes a state. As a result, the surface of the cover plate 62 is completely covered by the wafer W and the guide ring 64, and only the bottom surface and inner wall of the recess 62 a are exposed to the atmosphere in the processing chamber 12.

  When the PZT film is generated in the above-described state, the oxide 68 generated other than the PZT film adheres only to the bottom surface and the inner surface of the recess 62a as shown in FIG. Does not accumulate. The depth of the recess 62a is, for example, about 0.5 mm, and the oxide stays inside the recess 62a until the oxide 68 is deposited in the recess 62a to some extent, and the wafer W rides on the deposited oxide. There is no problem.

  Here, the recess 62 a is an annular groove and does not penetrate the cover plate 62. This is because when the recess 62a penetrates the cover plate 62, the surface of the mounting table main body 60 is exposed and oxide is deposited here. Therefore, the depth of the recess 62a is set to a depth that is smaller than the thickness of the cover plate 62 and can maintain a certain level of strength so that the cover plate 62 does not deform.

  In the above description, the recess 62a is an annular groove. However, in the case of a film forming apparatus that processes the wafer W having an orientation flat, it is preferable to match the shape of the recess 62a with the orientation flat as shown in FIG. More specifically, it is preferable to make the inner periphery of the recess 62a coincide with the outer shape of the orientation flat portion of the wafer W or be slightly smaller. The outer periphery of the recess 62a remains circular.

  Thereby, even if the wafer W having the orientation flat is placed on the cover plate 62, the portion of the cover plate 62 corresponding to the orientation flat portion of the wafer W is the recess 62a, and the placement surface of the cover plate 62 is not exposed. Therefore, the oxide 68 deposited on the portion of the cover plate 62 corresponding to the orientation flat portion of the wafer W is deposited in the recess 62a, as in the example shown in FIG. FIG. 8 is a plan view of a portion of the cover plate where the recess 62a is formed, and the wafer W is indicated by a dotted line. The hatched portion inside the recess 62a is a wafer mounting area.

  By configuring the recess 62a as shown in FIG. 8 as described above, even when the wafer W having the notch is processed after the wafer W having the orientation flat is processed, the wafer W having the notch corresponds to the orientation flat. It does not run on the oxide deposited on the part. Therefore, the temperature uniformity of the wafer W and the in-plane uniformity / reproducibility of the film formation can be maintained well over a long period of time.

  Further, since the wafer W is not placed at an angle, contamination of the back surface of the wafer W can be prevented. However, in the case of the wafer W having a notch, the portion corresponding to the orientation flat protrudes into the recess 62a, so that the back surface of this portion is exposed to the atmosphere in the processing chamber, and the back surface of the wafer W is contaminated. There is a risk. However, the area corresponding to the orientation flat is very small, and the entire back surface is not contaminated.

  As described above, even when the recess 62a has a portion corresponding to the orientation flat, the recess 62a is formed so that the inner periphery of the recess 62a is the same as or slightly smaller than the outer periphery of the mounting area of the wafer W. Thus, it is possible to prevent the oxide from being deposited in the mounting region of the wafer W.

  Next, a film forming apparatus according to a second embodiment of the present invention will be described with reference to FIG. FIG. 9 is a cross-sectional view of a processing chamber provided in a film forming apparatus according to a second embodiment of the present invention. The film forming apparatus according to the second embodiment of the present invention has the same configuration as the film forming apparatus according to the first embodiment of the present invention shown in FIG. 5 except for the processing chamber (wafer heating method), and the description thereof is omitted. . 9, parts that are the same as the parts shown in FIG. 6 are given the same reference numerals, and descriptions thereof will be omitted.

  The processing chamber 70 shown in FIG. 9 uses a lamp heating device as a heating device for the wafer W. In the present embodiment, the mounting table 70a for mounting the wafer W includes a susceptor 62, a cover plate 64, and a support portion 70b. A susceptor 62 as a mounting member (which has the same function as the cover plate 62 in the first embodiment described above, is given the same reference numeral) is formed on the bottom surface by a cylindrical support portion 70b raised from the bottom surface of the processing chamber 70. It is supported at the outer peripheral portion of 62b. The bottom surface 62b of the susceptor 62 is exposed to the internal space of the support portion 70b.

  A transparent quartz window 72 is provided on the bottom surface of the processing chamber 70, and light (heat rays) can be introduced into the internal space of the support portion 70a. A heating lamp 74 such as a halogen lamp is disposed outside the transparent quartz window 72. The lamp 74 is supported by a socket 78 attached to a lamp support base 76 and faces the bottom surface 62 b of the susceptor 62 through a transparent quartz window 72.

  Light (heat rays) emitted from the lamp 74 passes through the transparent quartz window and is applied to the bottom surface 62 b of the susceptor 62. Thereby, the susceptor 62 is heated, and the wafer W placed by the heat is heated to a processing temperature (for example, 550 ° C.).

  The susceptor 62 has an annular recess 62a as in the first embodiment, and the oxide is deposited in the recess 62a, but the oxide is deposited on the surface of the susceptor 62 (the surface on which the wafer W is placed). Will not deposit. Also in this embodiment, the recess 62 a is formed so as not to penetrate the susceptor 62. This is because if the recess 62a penetrates the susceptor 62, the oxide adheres to the transparent quartz window 72 and light (heat rays) cannot be transmitted.

  As described above, the cover plate or susceptor 62 according to the present invention can be applied to a mounting table in which an electric heater for resistance heating is incorporated or a mounting table by lamp heating.

Note that the film forming apparatus according to the present invention described above can be used other than the PZT film. For example, high-ferroelectric films such as BST film, SBT film, BLT film, RE-Ba-Cu-O system (RE is a rare earth element), Bi-Sr-Ca-Cu-O system, Tl-Ba- In-situ such as high-temperature superconductor film such as Ca—Cu—O system, gate insulating film such as Al ₂ O ₃ , HfO ₂ , ZrO ₂ , oxide electrode film such as RuO ₂ , IrO ₂ , SrRuO system, etc. It is also effective for a film forming process in which dry cleaning (cleaning while attached to the apparatus) is difficult. Here, BST represents an oxide containing Ba, Sr and Ti, SBT represents an oxide containing Sr, Bi and Ta, and BLT represents an oxide containing Bi, La and Ti. .

  In the configuration shown in FIG. 7, the height of the cover plate 62 is the same except for the recess 62a. However, the present invention is not limited to this, and various modifications can be considered. Such a modification will be described below. Note that the following modification can also be applied to the susceptor 62 shown in FIG.

  FIG. 10 is a cross-sectional view showing a part of a first modification of the cover plate shown in FIG. In the cover plate or susceptor 62A shown in FIG. 10, the thickness t1 of the wafer mounting region is different from the thickness t2 of the outer portion.

  Specifically, the thickness t2 in the outer portion of the recess 62a is smaller than the thickness t1 in the inner portion of the recess 62a (t1> t2). The difference between the thickness t1 and the thickness t2 is a dimension such that the surface of the guide ring 64 and the surface of the wafer W are substantially in the same plane when the guide ring 64 is placed as shown by a dotted line in FIG. Set to As a result, as indicated by arrows in the figure, the gas flow in the vicinity of the surface of the wafer W becomes smooth, and the effect of improving the in-plane uniformity of film formation can be obtained.

  FIG. 11 is a cross-sectional view showing a part of a second modification of the cover plate shown in FIG. In the cover plate or susceptor 62B shown in FIG. 11, the thickness t1 of the wafer mounting region is different from the thickness t2 of the outer portion.

  Specifically, the thickness t2 in the outer portion of the recess 62a shown in FIG. 7 is smaller than the thickness t1 in the inner portion of the recess 62a (t1> t2), and the surface of the outer portion of the recess 62a and the bottom surface of the recess 62a Are coplanar. That is, instead of providing the recess 62a, a step is provided between the mounting area of the wafer W and its outer portion. Thereby, there is no need to form a groove for forming the recess 62a in the cover plate, the processing can be simplified, and the processing cost can be reduced.

  11, the difference between the thickness t1 and the thickness t2 is that when the guide ring 64 is disposed, the surface of the guide ring 64 and the surface of the wafer W are substantially the same plane. It is set to such a dimension. As a result, as indicated by arrows in the figure, the gas flow in the vicinity of the surface of the wafer W becomes smooth, and the effect of improving the in-plane uniformity of film formation can be obtained.

  Moreover, as shown in FIG. 12, it is good also as providing the part extended inside from the inner peripheral part of a guide ring in the structure shown in FIG. That is, the extending portion 64a is provided on the inner peripheral side surface of the guide ring 64A. The distal end (inner periphery) of the extending portion 64a extends to the vicinity of the step portion of the cover plate 62B. As a result, the extended portion 64a, which is a part of the guide ring 64A, projects to a position directly below the outer periphery of the wafer W, so that the temperature of the portion corresponding to the concave portion 62a can be lowered. The amount of oxide deposited in the vicinity can be reduced. Therefore, effects such as extending the maintenance cycle can be obtained.

  Also, as shown in FIG. 13, wafer positioning pins 80 may be attached to several locations around the wafer mounting area. In this case, since the guide for placing the wafer W is performed by the pins 80, it is not necessary to provide the guide ring 64.

  FIG. 14 is a cross-sectional view showing a part of a third modification of the cover plate shown in FIG. In the cover plate or susceptor 62C shown in FIG. 14, the thickness t1 of the wafer mounting region is different from the thickness t2 of the outer portion.

  Specifically, the thickness t2 in the outer portion of the recess 62a is larger than the thickness t1 in the inner portion of the recess 62a (t1 <t2). The difference between the thickness t1 and the thickness t2 is set to a dimension substantially equal to the thickness of the wafer W. As a result, as indicated by arrows in the figure, the gas flow in the vicinity of the surface of the wafer W becomes smooth, and the effect of improving the in-plane uniformity of film formation can be obtained. Further, in this case, if the positioning guide function for placing the wafer W is handled by the outer portion of the recess 62a, the guide ring 64 need not be provided.

  Next, a third embodiment of the present invention will be described with reference to FIG. FIG. 15 is a sectional view of a susceptor and a cover ring provided in a film forming apparatus according to a third embodiment of the present invention. In the film forming apparatus according to the third embodiment of the present invention, the configuration other than the susceptor and the cover ring is the same as that of the film forming apparatus according to the above-described second embodiment, and the description thereof is omitted.

  In FIG. 15, a susceptor 100 as a mounting table on which a wafer is mounted and a cover ring 102 that is an annular member that covers the outer periphery of the susceptor 100 are mounted on a support 104. The susceptor 64, the cover ring 102, and the support portion 104 are components corresponding to the susceptor 62, the guide ring 70, and the support portion 70b shown in FIG.

  The outer peripheral portion 100b of the susceptor 100 has a thickness smaller than that of the central portion 100a on which the wafer W is placed, and the cover ring 102 is disposed so as to cover the surface of the outer peripheral portion 100b having a small thickness. The surface of the cover ring 102 is configured to be substantially in the same plane as the surface of the wafer W. An annular recess 106 similar to the recess 62 a shown in FIG. 9 is formed between the inner peripheral surface of the cover ring 102 and the outer peripheral surface of the central portion 100 a of the susceptor 100. By providing the recess 106, the wafer W is prevented from climbing on the deposit.

  Here, when the amount of deposits deposited in the recess 106 is small, the time for which the susceptor 100 is continuously used can be extended, and the maintenance cycle can be lengthened. Therefore, in this embodiment, a purge gas is allowed to flow in the annular recess 106 from the bottom toward the opening side (upward) to prevent a reaction gas that generates deposits from entering the recess 106. Yes.

Specifically, a purge gas made of an inert gas such as Ar, N ₂ or the like flows in a space defined by the support portion 104 and the back surface of the susceptor 100, and this purge gas is guided to the bottom surface of the recess 106. A purge gas is supplied to the recess 106 by forming a simple purge gas passage. A dry cleaning gas may be flowed as the purge gas.

  The purge gas passage includes a plurality of grooves 104 a formed on the susceptor mounting surface of the support portion 104, a gap 108 formed between the outer peripheral surface of the susceptor 100 and the support portion 104, and the upper surface of the outer peripheral portion 100 b of the susceptor 100. And a gap 110 formed between the bottom surface of the cover ring 102. The gap 108 and the gap 110 may be as small as is normally provided in the design of the susceptor 100 and the cover ring 102.

  Since the purge gas flows through the purge gas passage formed as described above as indicated by the arrow in FIG. 15, it becomes difficult for the reactive gas to enter the concave portion 106, and the amount of accumulated deposits in the concave portion 106 is reduced. Can do.

  The plurality of grooves 104a extending in the radial direction are preferably arranged in alignment in the circumferential direction. Further, instead of forming the groove 104 a in the support portion 104, a groove may be formed in the outer peripheral portion of the bottom surface of the susceptor 100. Moreover, it is good also as providing the small protrusion-shaped part on the back surface of the support part 104 or the susceptor 100 instead of a groove | channel. Further, instead of the grooves, the back surface of the support portion 104 or the susceptor 100 may be roughened by sandblasting or etching.

  FIG. 16 is a view showing a modification of the purge gas passage shown in FIG. In the purge gas passage shown in FIG. 15, the purge gas from the space on the back surface side of the susceptor 100 is guided to the gap 110 by the groove 104a and the gap 108, but in the modification shown in FIG. A hole 100c is provided to guide the purge gas from the back surface side of the susceptor 100 to the gap 110 as shown by the arrow in FIG. It is preferable to provide a plurality of holes 100c in a circumferential shape.

  Next, a fourth embodiment of the present invention will be described with reference to FIG. FIG. 17 is a sectional view of a susceptor and a cover ring provided in a film forming apparatus according to a fourth embodiment of the present invention. In the film forming apparatus according to the fourth embodiment of the present invention, the configuration other than the susceptor and the cover ring is the same as that of the film forming apparatus according to the above-described second embodiment, and the description thereof is omitted.

  In this embodiment, in addition to the deposits that adhere to the susceptor, the amount of deposits that adhere to the surface of the cover ring is reduced. The amount of deposits adhering to the surface of the covering increases as the surface temperature of the covering increases. Therefore, the surface temperature of the cover ring is reduced to reduce the amount of deposit attached.

  As shown in FIG. 17, the cover ring 102 according to this embodiment is divided into a lower cover ring 102A and an upper cover ring 102B, and a gap 112 is formed between the upper cover ring 102B and the lower cover ring 102A. ing. The cover ring 102 is heated mainly by radiant heat from the susceptor 100. That is, radiant heat is transmitted from the surface of the outer peripheral portion 100b of the susceptor 100 to the bottom surface of the cover ring 102, and is transmitted from the bottom surface to the surface by heat conduction, thereby increasing the surface temperature.

  In this embodiment, since the air gap 112 is provided as shown in FIG. 17, the heat conduction is deteriorated, and as a result, the heat transmitted to the upper cover ring 102B is reduced. Therefore, the surface temperature of the upper cover ring 102B can be reduced, and the amount of deposits attached on the surface of the upper cover ring 102B can be reduced.

  Further, as described above, the distance of the gap 110 between the bottom surface of the cover ring 102 and the surface of the outer peripheral portion 100b of the susceptor 100 does not have to be divided into the upper and lower parts as described above. By increasing G to, for example, 1 mm, heat transfer due to radiation from the susceptor 100 to the cover ring 102 can be suppressed. Thereby, the amount of heat transfer to the cover ring 102 is reduced, the surface temperature of the cover ring 102 can be reduced, and the amount of deposits deposited on the surface of the cover ring 102 can be reduced.

  Next, a fifth embodiment of the present invention will be described with reference to FIG. FIG. 19 is a sectional view of a susceptor and a cover ring provided in a film forming apparatus according to a fifth embodiment of the present invention. In the film forming apparatus according to the fifth embodiment of the present invention, the configuration other than the susceptor and the cover ring is the same as that of the film forming apparatus according to the above-described second embodiment, and the description thereof is omitted.

  In this embodiment, the susceptor 100 or the cover ring 102 is subjected to heat insulation processing or heat reflection processing to reduce the amount of heat transferred to the cover ring 102. That is, as shown in FIG. 19, for example, metal films 114 and 116 are formed on the front and back surfaces of the outer peripheral portion 100 b of the susceptor 100 by vapor deposition and subjected to heat reflection processing. The metal films 114 and 116 function as heat reflecting films that reflect the heat rays from the susceptor heating lamp. For this reason, the metal film 114 reflects the heat rays incident on the outer peripheral portion 100b of the susceptor 100 and suppresses heating of the outer peripheral portion. In addition, the metal film 116 reflects the heat rays transmitted through the inside of the outer peripheral portion 100 b of the susceptor 100 so that the heat rays do not reach the cover ring 102.

  In this embodiment, the metal film 118 is also formed on the bottom surface of the cover ring 102. The metal film 118 reflects heat rays transmitted through the outer peripheral portion 100b of the susceptor 100 and radiation generated when the outer peripheral portion is heated. Accordingly, the amount of heat rays incident on the cover ring 102 is suppressed, and heating of the cover ring 102 is suppressed.

  As described above, by subjecting the susceptor and the cover ring to heat insulation processing and heat reflection treatment, the surface temperature of the cover ring 102 can be reduced, and adhesion of deposits to the surface of the cover ring 102 can be suppressed.

  In this embodiment, the metal film is provided on both the front surface and the back surface of the outer peripheral portion 100b of the susceptor 100, but the effect of heat ray reflection can be obtained by using only one of them. Further, both the outer peripheral portion 100b of the susceptor 100 and the cover ring 102 are subjected to heat reflection treatment, but heat insulation or heat reflection effects can be obtained only by applying them to either one.

  As a means for suppressing the amount of heat rays that pass through the outer peripheral portion 100b of the susceptor 100, in addition to providing the heat reflecting film as described above, the thickness T of the outer peripheral portion 100b of the susceptor 100 is increased as shown in FIG. It is good. That is, by changing the thickness T of the outer peripheral portion 100 b of the susceptor 100, the heat ray transmittance is adjusted, and the amount of heat rays reaching the cover ring 102 is adjusted.

  As described above, the amount of deposits attached to the cover ring 102 can be reduced by reducing the surface temperature of the cover ring 102. However, when the temperature of the cover ring 102 is reduced, the temperature of the outer peripheral portion of the wafer W near the cover ring 102 becomes lower than the temperature of the central portion, and the in-plane uniformity of the surface temperature of the wafer W may be impaired. Therefore, in the following embodiments, measures are taken so that the temperature of the outer peripheral portion of the wafer W does not decrease.

  A sixth embodiment of the present invention will be described with reference to FIG. FIG. 21 is a sectional view of a susceptor and a cover ring provided in a film forming apparatus according to a sixth embodiment of the present invention. In the film forming apparatus according to the seventh embodiment of the present invention, the configuration other than the susceptor and the cover ring is the same as that of the film forming apparatus according to the second embodiment described above, and the description thereof is omitted.

  In this embodiment, heat ray absorption processing is performed in the vicinity of the boundary portion between the central portion 100a and the outer peripheral portion 100b on the back surface of the susceptor. For example, as shown in FIG. 21, the heat ray absorption processing is performed by attaching a dark member 120 having a high heat ray absorption rate or forming a dark film having a high heat ray absorption rate. It is to process so as to absorb more heat rays from. Coloring may be performed by applying a colorant instead of attaching a dark member.

  Thus, by absorbing more heat rays in the peripheral portion of the central portion 100a of the susceptor 100, the outer edge portion of the wafer W can be heated more strongly, and the temperature of the outer edge portion of the wafer W is lowered. This can be prevented. Therefore, the surface of the wafer W can be heated so as to have a uniform temperature as a whole, and the in-plane uniformity of processing on the wafer W can be improved.

  As described above, by subjecting a part of the back surface of the susceptor 100 to a process for increasing the heat ray absorption rate, the temperature of the susceptor 100 can be partially controlled. Such partial heating control is not limited to heating the portion corresponding to the outer periphery of the central portion 100a of the susceptor 100 more strongly, and means that an arbitrary position of the susceptor can be heated than its surroundings. Alternatively, the surface temperature of the susceptor 100 can be made more uniform by coloring the back side of the central portion 100a of the susceptor 100 so that the absorption rate of the heat rays gradually increases from the center toward the outer periphery.

  Here, one of the reasons why the temperature of the outer edge portion of the wafer W is lowered is that the temperature of the portion where the wafer W comes into contact with the cover ring 102 having a low temperature is lowered. Therefore, in the following embodiments, the wafer W does not contact the cover ring 102.

  Hereinafter, a seventh embodiment of the present invention will be described with reference to FIGS. FIG. 22 is a sectional view of a susceptor and a cover ring provided in a film forming apparatus according to a seventh embodiment of the present invention. FIG. 23 is a plan view of the periphery of the positioning pin shown in FIG. 22 as seen from above. In the film forming apparatus according to the seventh embodiment of the present invention, the configuration other than the susceptor and the cover ring is the same as that of the film forming apparatus according to the second embodiment described above, and the description thereof is omitted.

  In this embodiment, as shown in FIG. 22, a positioning pin 122 is provided between the central portion 100 a of the susceptor 100 and the inner peripheral surface of the cover ring 102. The positioning pin 122 is preferably formed of a material having low thermal conductivity. A plurality of (at least three) positioning pins are provided around the outer peripheral portion 100a. As shown in FIG. 23, a notch 102 a that accommodates a part of the positioning pin 122 is formed on the inner peripheral surface of the cover ring 102.

  In the above configuration, a part of the positioning pin 122 protrudes inward from the inner peripheral surface of the cover ring 102 in a state where the positioning pin 122 is accommodated in the notch 102 a. Thereby, even if the wafer W placed on the central portion 100a of the susceptor 100 contacts the positioning pins 122, it does not contact the cover ring 102 having a low temperature. Therefore, the temperature drop of the outer edge portion of the wafer W can be suppressed, and the entire surface of the wafer W can be set to a uniform temperature.

  FIG. 24 is a cross-sectional view showing an example in which an annular positioning member 124 having a triangular cross section is arranged between the cover ring 102 and the central portion 100a of the susceptor 100 (that is, the wafer W) instead of the positioning pins 122. The inner periphery of the positioning member 124 is a substantially vertical surface, and forms a circumferential surface having a diameter slightly larger than that of the wafer W. On the other hand, the outer peripheral surface of the positioning member 124 is an inclined surface, and the volume of the portion with which the wafer W may come into contact is small. Corresponding to this inclined surface, the inner peripheral surface of the cover ring 102 is also inclined.

  The positioning member 124 may be fixed to the susceptor 100 as a separate member, or may be integrally formed as a part of the susceptor 100. In this case, the same effect as in FIG. 22 can be obtained. Furthermore, you may combine the above-mentioned Example as needed.

  In the above-described embodiment, the case where a circular substrate (wafer) is used has been described. However, the present invention can be applied to a square substrate such as an FPD in addition to a circular substrate.

12, 70 Processing chambers 12a, 70a Mounting table 14 Shower head 16 Exhaust trap 18 Vacuum pump 20 Gas supply device 22 Pb solution raw material tank 24 Zr solution raw material tank 26 Ti solution raw material tank 30, 32, 34 Liquid mass flow controllers 40, 46, 52 Vaporizers 44, 50, 56 Gas supply piping 57 Oxidizing gas supply piping 58 Bypass piping 60 Mounting base body 62, 62A, 62B, 62C Cover plate or susceptor 62a Recessed portion 62b Bottom surface 64, 64A Guide ring 64a Extension portion 66 Heating element 68 Oxide 70b Support portion 72 Transparent quartz window 74 Lamp 76 Lamp support base 78 Socket 80 Pin 100 Susceptor 100a Center portion 100b Outer portion 102 Cover ring 102a Notch 102A Lower cover ring 102B Upper cover ring 104 Sandwiching member 106 recess 108, 110, 112 gaps 114, 116, 118 metal film 120 member 122 positioning pin 124 positioning member

Claims (8)

A film forming apparatus for forming a film on a target object while supplying a processing gas to the target object,
A mounting member having a mounting area on which the object to be processed is mounted, the mounting member having a central part that defines the mounting area and an outer peripheral part that extends around the central part. The outer peripheral portion is formed with a thickness smaller than the central portion so that the portion protrudes from the outer peripheral portion; and
An annular member formed in an annular shape so as to surround the central portion and the outer periphery of the object to be processed and to cover the surface of the outer peripheral portion;
On the back surface side of the mounting member opposite to the surface of the mounting member on which the object to be processed is mounted, the processing member is maintained at a predetermined temperature by heating the mounting member. Heating means are provided,
A gap is formed between the mounting member and the annular member,
The back surface of the annular member facing the outer periphery of the mounting member, the surface of the outer periphery of the mounting member facing the back surface of the annular member, and the surface of the outer periphery of the mounting member A film forming apparatus, wherein at least one of the back surfaces of the film is subjected to heat reflection processing for reflecting heat rays. The film forming apparatus according to claim 1,
  The back surface of the annular member facing the outer periphery of the mounting member, the surface of the outer periphery of the mounting member facing the back surface of the annular member, and the surface of the outer periphery of the mounting member A film forming apparatus characterized in that heat reflection processing for reflecting heat rays is performed on two or more surfaces selected from the back surface of the film.   The film forming apparatus according to claim 1 or 2,
  The film forming apparatus, wherein the heating means is a lamp that emits heat rays. It is the film-forming apparatus as described in any one of Claims 1 thru | or 3 ,
A film forming apparatus for forming a metal film by the heat reflection processing. A film forming apparatus according to any one of claims 1 to 4,
The film formed on the object to be processed is a metal oxide thin film, and further includes gas supply means for supplying a processing gas and an oxidizing gas into the processing chamber in which the mounting member is disposed. A film forming apparatus. The film forming apparatus according to claim 5,
The metal oxide thin film is a PZT film formed by reacting a mixed gas of a Pb source gas, a Zr source gas, and a Ti source gas with an oxidizing gas. The film forming apparatus according to claim 5,
The film forming apparatus, wherein the metal oxide thin film is a BST film, an SBT film, or a BLT film. A film forming apparatus according to any one of claims 1 to 7,
The mounting member is made of a material mainly composed of aluminum nitride (AlN), alumina (Al ₂ O ₃ ), silicon carbide (SiC), quartz (SiO ₂ ), silicon nitride (Si ₃ N ₄ ), or amorphous carbon. A film forming apparatus formed.

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