CN109868448A - The aluminium attaching method and vacuum of metallic film coating machine transmit cavity configuration - Google Patents
The aluminium attaching method and vacuum of metallic film coating machine transmit cavity configuration Download PDFInfo
- Publication number
- CN109868448A CN109868448A CN201711257701.3A CN201711257701A CN109868448A CN 109868448 A CN109868448 A CN 109868448A CN 201711257701 A CN201711257701 A CN 201711257701A CN 109868448 A CN109868448 A CN 109868448A
- Authority
- CN
- China
- Prior art keywords
- aluminium
- vacuum
- metallic film
- holder
- film coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
A kind of the aluminium attaching method and vacuum transmission cavity configuration of metallic film coating machine, an at least holder is not influenced to be arranged at the position of mechanical arm transmission wafer among the vacuum transmission cavity of metallic film coating machine mainly for storing aluminium flake, then aluminium flake is transmitted by mechanical arm between holder and preposition etching reaction chamber, attaches processing procedure person to carry out aluminium；The effect of can promoting working efficiency and reducing equipment making cost is made it have by above structure.
Description
Technical field
The present invention is about a kind of semiconductor lug manufacturing process and the equipment for carrying out the processing procedure, and espespecially one kind can efficiently use vacuum
The space of transmission cavity, the working efficiency of aluminium attaching processing procedure is substantially improved and the metallic film coating of equipment making cost can be reduced
The aluminium attaching method and vacuum of machine transmit cavity configuration.
Background technique
For the demand for adapting to portable high-performance microelectronics product " short, small, light, thin ", tradition (Wire in a manner of routing
Bonding) the Electronic Encapsulating Technology engaged as chip with various substrate does not apply application demand already.Replace it be with
The flip chip bonding techniques that convex block (Bumps) replaces gold thread to engage as chip with substrate, this is the crucial core of wafer-level packaging
Heart technology.It, need to be prior to carrying out the system of plating UBM layer (convex block underlying metal film coating) on wafer among semiconductor lug manufacturing process
Then journey is sequentially coated photoresist, exposure and development, electroplating gold convex block again, washes away photoresist and the processing procedures such as UBM is etched.
All the top cover of vacuum transmission cavity 1 is gone divided by helping to see internal structure, Yu Shiji in all schemas below
The top surface envelope of the vacuum transmission cavity 1 is equipped with top cover in situation, so as to can be evacuated state inside it, this conjunction is first chatted bright.
Refering to Figure 1, the action schematic diagram of plating UBM layer processing procedure is carried out for a kind of known metal thin film coating machine,
Point out that the metallic film coating machine includes a vacuum transmission cavity 1, a coupled logical water set on 1 periphery of vacuum transmission cavity
Gas removal device 2, at least one preposition etching reaction chamber 3, several sputters 4, one first load lock 5a and one
Second load lock 5b, first and second load lock 5a, 5b are all connected with a normal pressure transmission device 6, should
The side of normal pressure transmission device 6 is equipped with several wafer carrier box 7 for placing wafer 8.When carrying out plating UBM layer processing procedure, using normal
Wafer 8 in wafer carrier box 7 is transported to the first load interlocking vacuum by the mechanical arm (not shown) in pressure transmission device 6
After the 5a of room, the valve between the first load lock 5a and normal pressure transmission device 6 is closed, and first load is interlocked
Vacuum chamber 5a is vacuumized, and when the pressure of first load lock 5a reaches high vacuum, recycles the vacuum transmission cavity 1
Wafer 8 in first load lock 5a is sequentially transmitted to aqueous vapor removal device 2, preposition erosion by interior mechanical arm 10
Reaction chamber 3 and sputter 4 are carved, sequentially to complete adding for removal aqueous vapor, removal aluminium electrode oxide and metallic film coating
Then work is sent again to the second load lock 5b back pressure to atmospheric pressure, then with the machinery in normal pressure transmission device 6
Arm sends back wafer 8 in the wafer carrier box 7, to complete the processing procedure of plating UBM layer.
Among above-mentioned processing procedure, wafer is after fab completes processing procedure, during being transported to encapsulation factory, on crystal column surface
Aluminium electrode can aoxidize, if the oxide on aluminium electrode surface does not remove, contact will be will cause in subsequent direct production convex block
Resistance is substantially increased, and is caused the conduction of chip in future and support plate bad, is caused scrap of the product.Therefore (include plating in production convex block
UBM layer) before, it is necessary to preposition etching reaction chamber 3 is first passed through, with plasma-based by the oxide removal on aluminium electrode surface on wafer,
2 preposition etching reaction chambers 3 are provided in Fig. 1 in order to increase production capacity.However, wafer 8 is utilized in the preposition etching reaction chamber 3
During plasma-based is clean, can generate solid byproducts (such as PI, PBO, carbon) particle or gaseous by-product (such as carbon monoxide,
Carbon dioxide, oxygen water) etc. various substances, those substances can be attached on the inside of the preposition etching reaction chamber 3 in a variety of manners
On wall, when the photosynthetic matter accumulation that these stick is to a certain amount, easy generation peels off and forms particle and be also easy to produce an oxidation
The bad airs such as carbon, carbon dioxide, aqueous vapor, oxygen, and this solid byproducts particle and gaseous by-product complete preposition etching
It can be diffused into the surface of wafer after reaction procedure, make aluminium electrode surface re-oxidation on wafer and cause the raised feelings of contact resistance
Shape.Therefore, for this problem to be solved, usually preparing a piece of aluminium flake, (shape that wafer can be processed into pure aluminum material is big
It is small or first aluminize on chip), it is then transmitted again into this aluminium flake is bombarded with plasma-based in the preposition etching reaction chamber 3, it will
Aluminium on aluminium flake is plated on preposition 3 inner sidewall of etching reaction chamber, by original various substance lids for being pounded and by plasma-based
Firmly, the generation of particle and bad air can be so effectively reduced, this movement is known as aluminium and attaches processing procedure.It would generally be in certain amount
After the wafer of (7 are best) makees preposition etch cleaned, 1 secondary aluminium must be made of aluminium flake and attaches processing procedure.
It please refers to shown in Fig. 2, is a kind of aluminium attaching method of known metal thin film coating machine, mainly puts aluminium flake 9
It, then will be in wafer carrier box 7 using the mechanical arm (not shown) in normal pressure transmission device 6 in wafer carrier box 7
After aluminium flake 9 is transported to the first load lock 5a, first load lock 5a is evacuated to pressure and reaches Gao Zhen
When empty, the mechanical arm 10 in the vacuum transmission cavity 1 is recycled to be transmitted to the aluminium flake 9 in first load lock 5a
Preposition etching reaction chamber 3 carries out plasma-based bombardment, is plated to the aluminium on aluminium flake 9 on preposition 3 inner sidewall of etching reaction chamber, Zhi Houzai
Aluminium flake 9 is sent to the second load lock 5b back pressure to atmospheric pressure using mechanical arm 10, then is transmitted with normal pressure
Aluminium flake 9 is sent back the wafer carrier box 7 by the mechanical arm in device 6, attaches processing procedure to complete 1 secondary aluminium.Since this is known
Aluminium attaches in processing procedure, and aluminium flake 9 has to be transmitted to high vacuum all the way under normal pressure, then sends normal pressure back to by high vacuum again, therefore
It can not carry out volume production in transmit process, and also need to take a significant amount of time, and working efficiency is very low.
It please refers to shown in Fig. 3, is mainly in the vacuum for the aluminium attaching method of another known metal thin film coating machine
The periphery of transmission cavity 1, which is added, to be connected and an aluminium flake temporary room 9a of high vacuum state is configured to temporarily store aluminium flake 9.Aluminium patch need to be done when having
When attached processing procedure, be just not required to vacuumize and can be directly using the mechanical arm 10 in the vacuum transmission cavity 1 by aluminium flake temporary room 9a
In aluminium flake 9 be transmitted to preposition etching reaction chamber 3 and carry out plasma-based bombardment and carry out aluminium attaching processing procedure.Although it is true that this mode can exempt pumping
Empty step, and improve above-mentioned ineffective problem, but aluminium flake temporary room 9a is that can occupy vacuum transmission
One aperture position of chamber 1, in turn results in the waste of position, and influences other processing procedures.Such as aqueous vapor removal can be occupied
The position of device 2 and the processing procedure for influencing removal aqueous vapor, or can occupy the position of one of them preposition etching reaction chamber 3 into
And influence the production capacity of preposition etch cleaned processing procedure.And it adds aluminium flake temporary room 9a and not only will increase being fabricated to for equipment
This, and when it is equipped with valve between vacuum transmission cavity 1 and two cavity barriers are come, then it just needs in addition to be arranged again a set of
Fine pumping system will so further increase cost of manufacture.
Summary of the invention
The main object of the present invention is to solve need present in the aluminium attaching method of known metal thin film coating machine to spend greatly
Amount the time repeat vacuumize and back pressure operation on and keep working efficiency very low, one for occupying the vacuum transmission cavity holds
Mouthful position and influence other processing procedures, and will increase dramatically the problems such as equipment making cost, and provide a kind of metal foil
The aluminium attaching method and vacuum of film coating machine transmit cavity configuration.
In order to achieve the above object, the technical scheme adopted by the invention is that: a kind of aluminium attaching method of metallic film coating machine,
Wherein the metallic film coating machine includes a vacuum transmission cavity and coupled logical set on the vacuum transmission cavity periphery and be all
The preposition etching reaction chamber of high vacuum state is equipped with a mechanical arm among the vacuum transmission cavity, its main feature is that, which attaches
Method includes the following steps:
(a) it does not influence to be provided with an at least holder at the position of mechanical arm transmission wafer among the vacuum transmission cavity, it should
Holder is for storing an aluminium flake；
(b) it using the mechanical arm by removing the aluminium flake on the holder, and send to the preposition etching reaction chamber；
(c) aluminium flake is bombarded using plasma-based among the preposition etching reaction chamber, the aluminium on the aluminium flake is made to be plated to the preposition etching
On reaction chamber inner sidewall；And
(d) after plating one layer of aluminium on the preposition etching reaction chamber inner sidewall, the mechanical arm is recycled to send the aluminium flake back to this
Holder.
The metallic film coating machine further includes a control system for setting and controlling the coating processing procedure of metallic film,
(a1) step is first carried out according to actual needs after above-mentioned (a) step, and each pair of a certain number of crystalline substances are worked as by control system setting
After circle makees preposition etch cleaned, that is, execute 1 (b) to (d) step.
After each pair of 7 wafers make preposition etch cleaned, 1 (b) to (d) step is executed.
Present invention simultaneously provides a kind of vacuum of metallic film coating machine to transmit cavity configuration comprising: a cavity, inside tool
Having can be in a transmission space of vacuum state, and the circumferential surface of the cavity is equipped with the several openings for penetrating into the transmission space, therein
One opening is connected with an external preposition etching reaction chamber；An at least holder, being located in the transmission space does not influence wafer
At the position of transmission, the holder is for a storage at least aluminium flake or an at least wafer；And a mechanical arm, it is empty to be set to the transmission
Between among be available for transmitting wafer and for by taking out the aluminium flake on the holder and being transmitted among the preposition etching reaction chamber
And the aluminium flake among the preposition etching reaction chamber is sent back on the holder.
The holder includes a fixing piece and two supportings, which combines the top for being fixed on the transmission space
Face, two supporting are respectively arranged on two opposite ends of the fixing piece and form an at least putting groove for putting the aluminium flake or the crystalline substance
Circle.
Two supporting is L-shaped and is respectively arranged on two opposite ends of the fixing piece and is in opposite shape, in two supporting
It is upper to be respectively provided with a supporting part respectively and put the aluminium flake or the wafer to form the putting groove.
The quantity of the holder is 4.The aluminium flake is pure aluminum plate or is the wafer that surface is coated with one layer of aluminium.
The aluminium attaching method and vacuum of metallic film coating machine provided by the present invention transmit cavity configuration, can be by true in this
The holder is set among empty transmission cavity for storing aluminium flake, makes to need not move through when carrying out aluminium attaching processing procedure and vacuumize and return
The movement of pressure, and working efficiency can therefore be substantially improved.Moreover, also the very close preposition etching is anti-for the storage position of the aluminium flake
Room is answered, so when carrying out aluminium attaching processing procedure the transport distance of aluminium flake can be shortened, further to promote working efficiency.In particular,
The structure of the holder is very simple, and cost of manufacture is not also high, especially the holder directly can be set to existing metal
Among the vacuum transmission cavity of thin film coating machine, without being in addition fabricated for the temporary room of aluminium flake storage, therefore not only can substantially it save
The cost of manufacture of province's equipment, and also can avoid the aperture position of waste vacuum transfer, in addition can also exempt foundation and keep in
The fine pumping system of room cooperation, so as to further decrease cost of manufacture.
Detailed description of the invention
Fig. 1 is the action schematic diagram that known metal thin film coating machine carries out plating UBM layer processing procedure.
Fig. 2 is a kind of aluminium attaching method of known metal thin film coating machine.
Fig. 3 is the aluminium attaching method of another known metal thin film coating machine.
Fig. 4 is the process block diagram of aluminium attaching method of the invention.
Fig. 5 is the action schematic diagram of aluminium attaching method of the invention.
Fig. 6 is the process block diagram of another embodiment of aluminium attaching method of the invention.
Fig. 7 is the sectional perspective decomposition diagram of vacuum transmission cavity of the invention.
Fig. 8 is the part section enlarged diagram at holder of the invention.
Fig. 9 is the action schematic diagram of the invention by removing aluminium flake on holder.
Figure 10 is the action schematic diagram that aluminium flake is sent into preposition etching reaction chamber by the present invention.
Symbol description:
1 vacuum transmission cavity, 10 mechanical arm
11 holder, 110 fixing piece
111 supporting, 112 supporting part
12 cavitys 120 transmit space
121 openings
The preposition etching reaction chamber of 2 aqueous vapor removal device 3
4 the first load locks of sputter 5a
6 normal pressure transmission device of the second load lock of 5b
7 wafer carrier box, 8 wafer
9 aluminium flake 9a aluminium flake temporary rooms.
Specific embodiment
It please refers to shown in Fig. 4, Fig. 5, shows the aluminium attaching method of metallic film coating machine of the present invention.Wherein, should
Metallic film coating machine includes a vacuum transmission cavity 1 and is all Gao Zhen set on 1 periphery of vacuum transmission cavity coupled lead to
The preposition etching reaction chamber 3 of dummy status is equipped with a mechanical arm 10 among the vacuum transmission cavity 1.The aluminium attaching method includes:
(a) it does not influence to be provided with an at least holder at the position of the transmission wafer 8 of mechanical arm 10 among the vacuum transmission cavity 1
11, the holder 11 is for one aluminium flake 9 of storage；
(b) it using the mechanical arm 10 by removing the aluminium flake 9 on the holder 11, and send to the preposition etching reaction chamber 3；
(c) aluminium flake 9 is bombarded using plasma-based among the preposition etching reaction chamber 3, the aluminium on the aluminium flake 9 is made to be plated to the preposition erosion
It carves on 3 inner sidewall of reaction chamber；And
(d) after plating one layer of aluminium on preposition 3 inner sidewall of etching reaction chamber, the mechanical arm 10 is recycled to send the aluminium flake 9
Return the holder 11.
Please also refer to shown in Fig. 6, it is indicated that the metallic film coating machine has further included a control system in the present invention
(not shown) is for setting and control the coating processing procedure of metallic film.It is that can first be carried out according to actual needs after (a) step
(a1) by control system setting when the wafer 8 of each pair of certain amount (being currently with 7 for optimum efficiency) makees preposition etching clearly
After clean, that is, execute 1 (b) to (d) step.
Please refer to the vacuum transmission cavity knot that metallic film coating machine of the present invention is shown shown in Fig. 5 and Fig. 7-Figure 10
Structure includes a cavity 12, at least a holder 11 and a mechanical arm 10.Wherein:
The cavity 12, it is internal with the transmission space 120 that can be in vacuum state.The circumferential surface of the cavity 12 is equipped with and penetrates into the biography
Several openings 121 in space 120 are sent, an opening 121 therein is connected with an external preposition etching reaction chamber 3.
The holder 11, being located in the transmission space 120, which does not influence mechanical arm 10, transmits at the position of wafer 8.This is set
Putting frame 11 includes a fixing piece 110 and two supportings 111, which combines the top for being fixed on the transmission space 120
Face, which is two opposite ends that are L-shaped and being set to the fixing piece 110 and is in opposite shape, in two supporting 111
It is upper to be respectively provided with a supporting part 112 respectively to form a putting groove for one aluminium flake 9 of carrying.In the present invention, which can be pure
Aluminium sheet can be coated with the wafer of one layer of aluminium also for surface.
The mechanical arm 10 is available for transmitting wafer 8 and for by the holder 11 among the transmission space 120
Upper taking-up aluminium flake 9 is simultaneously transmitted among the preposition etching reaction chamber 3 and send the aluminium flake 9 among the preposition etching reaction chamber 3
It returns on the holder 11.
Among the present invention, the quantity of the holder 11 is best with 4, and the holder 11 is except can be such as above-mentioned implementation
Example also may be disposed at the other positions such as the bottom surface in the transmission space 120 outside being set at the top surface in the transmission space 120.In addition,
Each holder 11 can also form upper and lower two layers of putting groove, and four holders 11 can have eight putting grooves.And it is of the invention
Putting groove on those holders 11 can also temporarily store previous reaction when production in addition to the aluminium flake 9 can be placed
The wafer 8 that room has been handled waits next reaction chamber vacating space to continue to produce again, can so allow concatenated reaction
Will not traffic congestion, improve reaction chamber work efficiency, situation processing when, can also be processing if reaction chamber is problematic
In wafer temporarily first fall back on those putting grooves, after situation exclusion, then judged whether to continue to send back to former reaction by staff
Room production, because not having to broken atmosphere, it is possible to improve protection of the wafer in situation exclusion process.
Metallic film coating machine of the invention generally just needs to carry out 1 secondary aluminium after 7 wafers finish preposition etch cleaned
Processing procedure is attached, therefore the wafer of a batch 25 needs to do 4 secondary aluminiums and attaches processing procedure.It is illustrated with the pure aluminum plate that aluminium flake is 2.5mm thickness, often
It is about 500A hereinafter, the aluminium flake about can be used 20000 times using the thickness of 1mm that secondary aluminium flake, which pounds the amount come by plasma-based,
25 wafers 8 are with 4 times, that is to say, that can do the wafer of 125000 (5000 times × 25), usual preposition etching reaction
Room 3 just will do it 1 maintenance after cleaning 3000 wafers.Therefore when aluminium flake can't bear use and it is to be replaced when, can carry out
While maintenance or other opportune moments, unserviceable aluminium flake is passed out to using the mechanical arm 10 in vacuum transmission cavity 1
Second load lock 5b, then wafer carrier box 7 is transmitted to by the mechanical arm in normal pressure transmission device 6, then by normal
In addition aluminium flake new in wafer carrier box 7 is transmitted to the first load lock 5a by the mechanical arm in pressure transmission device 6,
It is sent back on holder 11 by the mechanical arm 10 in vacuum transmission cavity 1 again, to complete the replacement (about 2 minutes time-consuming) of aluminium flake,
It so just will not influence working efficiency.
The aluminium attaching method and vacuum of metallic film coating machine provided by the present invention transmit cavity configuration, can be by true in this
The holder 11 is set among empty transmission cavity 1 for storing aluminium flake 9, makes to need not move through and vacuumize when carrying out aluminium attaching processing procedure
And the movement of back pressure, and working efficiency can therefore be substantially improved.Moreover, also closely this is preposition for the storage position of the aluminium flake 9
Etching reaction chamber 3, so the transport distance of aluminium flake 9 can be shortened when carrying out aluminium attaching processing procedure, further to promote work effect
Rate.In particular, the structure of the holder 11 is very simple, cost of manufacture is not also high, especially can directly set the holder 11
It is placed among the vacuum transmission cavity of existing metallic film coating machine, without being in addition fabricated for the temporary room of the storage of aluminium flake 9, because
This not only can substantially save the cost of manufacture of equipment, and also can avoid 121 position of opening of waste vacuum transfer, in addition also
The fine pumping system of foundation and temporary room cooperation can be exempted, so as to further decrease cost of manufacture.
Claims (9)
1. a kind of aluminium attaching method of metallic film coating machine, wherein the metallic film coating machine include a vacuum transmission cavity and
Set on the coupled preposition etching reaction chamber that is logical and being all high vacuum state in the vacuum transmission cavity periphery, in the vacuum transmission cavity
Among be equipped with a mechanical arm, which is characterized in that the aluminium attaching method includes the following steps:
(a) it does not influence to be provided with an at least holder at the position of mechanical arm transmission wafer among the vacuum transmission cavity, it should
Holder is for storing an aluminium flake；
(b) it using the mechanical arm by removing the aluminium flake on the holder, and send to the preposition etching reaction chamber；
(c) aluminium flake is bombarded using plasma-based among the preposition etching reaction chamber, the aluminium on the aluminium flake is made to be plated to the preposition etching
On reaction chamber inner sidewall；And
(d) after plating one layer of aluminium on the preposition etching reaction chamber inner sidewall, the mechanical arm is recycled to send the aluminium flake back to this
Holder.
2. the aluminium attaching method of metallic film coating machine as described in claim 1, feature are being, the metallic film plating
Layer machine further includes a control system for setting and controlling the coating processing procedure of metallic film, and Yu Shangshu (a) step is later according to reality
I.e. by the control system setting after each pair of a certain number of wafers make preposition etch cleaned, i.e., border needs first to carry out (a1) step
Execute 1 (b) to (d) step.
3. the aluminium attaching method of metallic film coating machine as claimed in claim 2, which is characterized in that when each pair of 7 wafers
After making preposition etch cleaned, 1 (b) to (d) step is executed.
4. a kind of vacuum of metallic film coating machine transmits cavity configuration, characterized in that it comprises:
One cavity, inside has can be in a transmission space of vacuum state, and the circumferential surface of the cavity, which is equipped with, penetrates into the transmission space
Several openings, it is therein one opening with outside a preposition etching reaction chamber is connected；
An at least holder is located in the transmission space at the position for not influencing wafer transmission, and the holder is for storage at least one
Aluminium flake or at least a wafer；And
One mechanical arm is available for transmitting wafer and for by taking out the aluminium flake simultaneously on the holder among the transmission space
It is transmitted among the preposition etching reaction chamber and sends back to the aluminium flake among the preposition etching reaction chamber on the holder.
5. the vacuum of metallic film coating machine as claimed in claim 4 transmits cavity configuration, which is characterized in that the holder packet
Containing a fixing piece and two supportings, which combines the top surface for being fixed on the transmission space, which is respectively arranged on
Two opposite ends of the fixing piece and form an at least putting groove for putting the aluminium flake or the wafer.
6. the vacuum of metallic film coating machine as claimed in claim 5 transmits cavity configuration, which is characterized in that two supporting
Two opposite ends that are L-shaped and being respectively arranged on the fixing piece and in opposite shape, in being respectively provided with a supporting part respectively on two supporting
The aluminium flake or the wafer are put to form the putting groove.
7. the vacuum of metallic film coating machine as claimed in claim 4 transmits cavity configuration, which is characterized in that the holder
Quantity is 4.
8. the vacuum of metallic film coating machine as claimed in claim 4 transmits cavity configuration, which is characterized in that the aluminium flake is pure
Aluminium sheet.
9. the vacuum of metallic film coating machine as claimed in claim 4 transmits cavity configuration, which is characterized in that the aluminium flake is table
Face is coated with the wafer of one layer of aluminium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711257701.3A CN109868448A (en) | 2017-12-04 | 2017-12-04 | The aluminium attaching method and vacuum of metallic film coating machine transmit cavity configuration |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711257701.3A CN109868448A (en) | 2017-12-04 | 2017-12-04 | The aluminium attaching method and vacuum of metallic film coating machine transmit cavity configuration |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109868448A true CN109868448A (en) | 2019-06-11 |
Family
ID=66914387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711257701.3A Pending CN109868448A (en) | 2017-12-04 | 2017-12-04 | The aluminium attaching method and vacuum of metallic film coating machine transmit cavity configuration |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109868448A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0681191A (en) * | 1992-08-28 | 1994-03-22 | Nisshin Steel Co Ltd | Non-water electroplating method |
| US5934856A (en) * | 1994-05-23 | 1999-08-10 | Tokyo Electron Limited | Multi-chamber treatment system |
| CN101154559A (en) * | 2006-09-30 | 2008-04-02 | 中芯国际集成电路制造(上海)有限公司 | Technique for reducing particle in reaction chamber |
| CN103208440A (en) * | 2012-01-17 | 2013-07-17 | 中国科学院微电子研究所 | Cavity heating device |
| CN104821271A (en) * | 2014-02-04 | 2015-08-05 | 格罗方德半导体公司 | Etching of under bump mettallization layer and resulting device |
-
2017
- 2017-12-04 CN CN201711257701.3A patent/CN109868448A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0681191A (en) * | 1992-08-28 | 1994-03-22 | Nisshin Steel Co Ltd | Non-water electroplating method |
| US5934856A (en) * | 1994-05-23 | 1999-08-10 | Tokyo Electron Limited | Multi-chamber treatment system |
| CN101154559A (en) * | 2006-09-30 | 2008-04-02 | 中芯国际集成电路制造(上海)有限公司 | Technique for reducing particle in reaction chamber |
| CN103208440A (en) * | 2012-01-17 | 2013-07-17 | 中国科学院微电子研究所 | Cavity heating device |
| CN104821271A (en) * | 2014-02-04 | 2015-08-05 | 格罗方德半导体公司 | Etching of under bump mettallization layer and resulting device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109768165B (en) | Perovskite solar cell and preparation method thereof | |
| WO2023213189A1 (en) | Semiconductor process device, and method for forming stacked film structure | |
| KR102182791B1 (en) | Apparatus and method for bonding substrates | |
| CN113066745A (en) | Reactive ion etching device and method for continuously preparing large-area nano suede | |
| US20190036027A1 (en) | A shadow mask with tapered openings formed by double electroforming | |
| JP4979442B2 (en) | Method for producing Ga sputter target | |
| CN216793641U (en) | Light emitting diode transfer device | |
| CN109868448A (en) | The aluminium attaching method and vacuum of metallic film coating machine transmit cavity configuration | |
| CN103840055A (en) | Green led chip and preparation method thereof | |
| CN111129249B (en) | Deep ultraviolet light-emitting diode and preparation method thereof | |
| US20190311927A1 (en) | Aluminum adhering process and vacuum transfer chamber for a metal thin film plating machine | |
| CN107492478A (en) | The film build method of semiconductor equipment and the aluminium nitride film build method of semiconductor equipment | |
| TWI640643B (en) | Aluminum attaching method of metal film coating machine and vacuum transfer cavity structure | |
| CN212934548U (en) | Electrostatic device and substrate processing system with same | |
| CN104532208A (en) | Nitride epitaxy device and method | |
| CN109055896A (en) | A method of directly preparing graphene on an insulating substrate | |
| CN114242553A (en) | Processing method of HDPCVD (high-density plasma chemical vapor deposition) process equipment | |
| TWI827962B (en) | Electrostatic device, substrate processing system in which it is located and replacement cleaning method thereof | |
| CN109216512B (en) | QLED device, preparation method thereof and high-voltage processing device | |
| JP2012531059A (en) | Semiconductor wafer manufacturing apparatus and apparatus for depositing material by evaporation using molecular beam | |
| CN220856514U (en) | Automatic communication pipeline for wafer bonding | |
| CN116536650B (en) | Film growth interface optimization method for film growth optimization | |
| CN109786392A (en) | Show equipment and its manufacturing method | |
| JP5617659B2 (en) | Manufacturing method of solar cell | |
| CN102820255A (en) | Method for physics vapor deposition (PVD) film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190611 |