CN103824745B - A kind of reaction chamber - Google Patents
A kind of reaction chamber Download PDFInfo
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- CN103824745B CN103824745B CN201210469162.0A CN201210469162A CN103824745B CN 103824745 B CN103824745 B CN 103824745B CN 201210469162 A CN201210469162 A CN 201210469162A CN 103824745 B CN103824745 B CN 103824745B
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- coupling part
- chamber
- pedestal
- mounting portion
- reaction chamber
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Abstract
Disclosure one reaction chamber, including chamber, it is positioned at the electrostatic chuck of described chamber interior, liner and pedestal, described pedestal is used for supporting described electrostatic chuck, described interior lining is provided with multiple air vent, described pedestal includes support section, coupling part and mounting portion, wherein: described support section is positioned at immediately below described electrostatic chuck and supports described electrostatic chuck; The side of described coupling part is connected with described support section, and described coupling part is point to width the direction at chamber center from chamber wall to be gradually reduced in the orthographic projection of described interior lining; Described mounting portion is connected with the opposite side of described coupling part, and described mounting portion for being fixed on the sidewall of described chamber by described pedestal. By the non-wide design of coupling part, improve blocking top liner, the air vent of the interior lining above pedestal symmetry diametrically being improved, thus increasing the radially uniform property of pedestal overhead stream distribution, improve process uniformity.
Description
Technical field
The present invention relates to semiconductor equipment manufacturing technology field, particularly to a kind of for the reaction chamber in plasma etching equipment.
Background technology
The integrated level of chip is constantly proposed higher requirement by the development of modern integrated circuits, including more semiconductor components and devices integrated on one chip, so that chip has higher current densities. In order to obtain higher current densities, it is necessary to reduce the critical size of semiconductor components and devices. Minimizing along with critical size so that the manufacture of semiconductor components and devices is increasingly difficult, in order to improve yield rate, has higher requirement to process uniformity on silicon chip. In plasma etching industrial, air-flow is the key factor affecting process uniformity.
Fig. 1 illustrates the structure diagram of the reaction chamber of a kind of plasma etching machine adopting lower pumping mode, as it is shown in figure 1, this plasma etching machine includes chamber 101, air inlet 102, electrostatic chuck 103, silicon chip 104, aluminium base 105, liner 106 and gas outlet 107. Wherein, process gas enters chamber 101 from air inlet 102, and it is activated into plasma, plasma is limited in the certain area near silicon chip 104 by liner 106, and there is chemical reaction with silicon chip 104, reacted gas is taken away from the gas outlet 107 of chamber by vacuum pump by the air vent on liner 106. In this process, due to the liner 106 drainage to gas so that plasma forms annular airflow field on the circumferencial direction of silicon chip 104, thus fully reacting with silicon chip 104.
Fig. 2 A illustrates the top view of liner 106, and as shown in Figure 2 A, the air vent that liner 106 is offered presents radioactivity and is uniformly distributed, and these air vents play the effect of drain as the passage that gas flows through. Fig. 2 B illustrates the top view of aluminium base 105, and as shown in Figure 2 B, aluminium base 105 includes the mounting portion of the wide design of support section and the right of left side toroidal.Fig. 3 A illustrates liner 106 and the top view of aluminium base 105, and as shown in Figure 3A, the partial ventilation hole of interior lining is blocked by the aluminium base 105 of lower section. Fig. 3 B illustrates the schematic cross-section of liner 106 and aluminium base 105 on A-A direction in figure 3 a, and wherein, aluminium base 105 is positioned at the lower section of liner 106 and blocking due to aluminium base 105 so that above aluminium base 105, the drain of liner 106 becomes uneven. Can be seen that from Fig. 3 A and Fig. 3 B, owing on liner 106, part air vent is blocked by the aluminium base 105 of lower section, make the air-flow extracted out by air vent radially and circumferentially go up all uneven, thus cause air-flow silicon chip 104 radially and circumferentially go up asymmetric, affect the uniformity of technique.
In order to the uneven of gas caused of blocking due to aluminium base is improved, Chinese patent literature 1(publication number: 200980112419.3.A) disclose one " there is the current equalizer of integration and there is the conductive lower inner liner part of improvement ". Refer to Fig. 4, it illustrates the structural representation of inner piece disclosed in document 1, as shown in Figure 4, on inner piece in document 1, distribution has the pore of multiple radial bar shaped, these pores uneven arrangement, but at the pore of 501 parts, there is higher density, this part holes is positioned over the top of aluminium base support section, the exhaust capacity in this region can be increased, alleviate due to below liner aluminium base block the impact on airflow homogeneity, thus reach improve circumference bleed uniformity, improve process uniformity purpose. Although this inner lining structure can improve the uniformity that circumference is bled, but the inhomogeneities being distributed due to the bar hole of radial liner, cause that the uniformity radially bled does not improve.
Summary of the invention
It is at least solve one of the problems referred to above, the present invention provides a kind of reaction chamber, in this reaction chamber, the pedestal width on the direction pointing to chamber center from chamber wall below liner is gradually reduced, the air vent of the interior lining above pedestal symmetry diametrically is improved, thus increasing the radially uniform property of pedestal overhead stream distribution, improve process uniformity.
For solving above-mentioned technical problem, the present invention provides a kind of reaction chamber, including chamber, it is positioned at the electrostatic chuck of described chamber interior, liner and pedestal, described pedestal is used for supporting described electrostatic chuck, described interior lining is provided with multiple air vent, described pedestal includes support section, coupling part and mounting portion, wherein: described support section is positioned at immediately below described electrostatic chuck and supports described electrostatic chuck;
The side of described coupling part is connected with described support section, and described coupling part is point to from chamber wall to be gradually reduced the direction at chamber center at the width of the orthographic projection of described interior lining;
Described mounting portion is connected with the opposite side of described coupling part, and described mounting portion for being fixed on the sidewall of described chamber by described pedestal.
Preferably, described coupling part is fan ring in the orthographic projection of described interior lining.
Preferably, the dual-side of described fan ring is radially arranged, consistent with the distribution of described interior lining radial air vent.
Preferably, the central angle of described fan ring is 30 degree to 60 degree.
Preferably, described coupling part and be provided with the cavity of hollow in described mounting portion, described cavity is for holding the circuit connecting wire of gas circuit needed for conveying process gas and/or electrostatic chuck.
Preferably, described support section, coupling part and mounting portion global formation during fabrication.
Preferably, on described mounting portion, surface away from side, described coupling part is plane.
Preferably, the height of described mounting portion is equal to the height of described coupling part, and the width of described mounting portion is less than the width of described coupling part.
Preferably, described air vent is radially uniformly distributed along the radial direction of liner, and described air vent be shaped as strip.
Preferably, described pedestal is aluminium base.
The method have the advantages that
Pedestal in reaction chamber provided by the present invention includes support section, coupling part and mounting portion, coupling part is gradually reduced at orthographic projection width on the direction pointing to chamber center from chamber wall of interior lining, by coupling part is adopted so non-wide design, improve blocking top liner, the air vent of the interior lining above pedestal symmetry diametrically is improved, thus increasing the radially uniform property of pedestal overhead stream distribution, improve process uniformity.
Accompanying drawing explanation
Fig. 1 is the structural representation of the reaction chamber of the plasma etching machine of lower pumping mode in prior art;
Fig. 2 A is the schematic top plan view of liner in prior art;
Fig. 2 B is the schematic top plan view of aluminium base in prior art;
Fig. 3 A is the schematic top plan view of liner and aluminium base in prior art;
Fig. 3 B is the schematic cross-section of liner and aluminium base on A-A direction in figure 3 a;
Fig. 4 is the structural representation of a kind of inner piece disclosed in prior art;
The structural representation of the reaction chamber that Fig. 5 provides for the embodiment of the present invention;
The schematic top plan view of pedestal in the reaction chamber that Fig. 6 provides for the embodiment of the present invention;
Liner that Fig. 7 A provides for the embodiment of the present invention and the schematic top plan view of aluminium base;
Fig. 7 B is the schematic cross-section of liner and aluminium base on B-B direction in fig. 7.
Detailed description of the invention
For making those skilled in the art be more fully understood that technical scheme, the reaction chamber embodiment of the present invention provided below in conjunction with accompanying drawing elaborates.
The structural representation of the reaction chamber that Fig. 5 provides for the embodiment of the present invention. Refer to Fig. 5, the reaction chamber that the present embodiment provides includes: chamber 201, be positioned at the electrostatic chuck 203 within chamber 201, liner 206 and pedestal 205, described pedestal 205 is used for supporting and fixing described electrostatic chuck 203, and described liner 206 is provided with multiple air vent.
The top view of the pedestal 205 that Fig. 6 provides for the embodiment of the present invention, refers to Fig. 6, and described pedestal includes support section 301, coupling part 302 and mounting portion 303, wherein:
Support section 301 is positioned at immediately below described electrostatic chuck 203 and for supporting electrostatic chuck 203. In the present embodiment, support section 301 is annular, it is also possible to be other shapes. The size of annular matches with the size of electrostatic chuck.
The side of coupling part 302 is connected with support section 301, and opposite side is connected with mounting portion 303. So that the air-flow above electrostatic chuck 203 is more uniform, the coupling part 302 orthographic projection on described liner 206 is formed points to, from chamber wall, the shape that the direction at chamber center, width is gradually reduced. By such design, make pedestal 205 while providing support for electrostatic chuck 203, improve blocking top liner, the air vent of the interior lining above pedestal symmetry diametrically is improved, thus increasing the radially uniform property of pedestal overhead stream distribution, reach to improve the purpose of process uniformity.
Preferably, the coupling part 302 orthographic projection on liner 206 is fan ring, and the dual-side of above-mentioned fan ring is radially arranged, and is distributed with the radial air vent on liner 206 and keeps consistent.The present embodiment is radially uniformly distributed along the radial direction of liner 206 with the air vent on liner 206, and the strip that is shaped as of air vent is that example illustrates. The angle that two adjacent air vents are formed is approximately 1 degree to 3 degree, and for this liner 206, the central angle of fan ring is 25 degree to 50 degree. When the size of liner 206 adopted or type change, this central angle can produce corresponding change.
Mounting portion 303 is connected with the side of coupling part 302, and opposite side is connected with the sidewall of chamber 201, thus being fixed on by pedestal 205 on the sidewall of described chamber 201.
The height of coupling part 302 is about 100cm.
Support section 301 is identical with the height of coupling part 302 with the height of mounting portion 303, is also about 100cm.
In figure 6, mounting portion 303 protrudes above from described coupling part 302, it seems that and along being perpendicular to the sidewall of chamber 201 and pointing to the direction at chamber 201 center, the width of mounting portion 303 is less than the width of coupling part 302.
With the coupling part 302 below liner for fanning ring in the present embodiment, it is illustrated with mounting portion 303 for the structure protruded above from fan ring, and the one side making mounting portion 303 relative with chamber 201 sidewall is plane, to facilitate installation. In other embodiments, coupling part 302 and mounting portion 303 can also be the fan rings of one, and utilize the cambered surface relative with chamber 201 sidewall outside fan ring to install, or the cambered surface relative with chamber 201 sidewall outside fan ring is set to plane in whole or in part, thus installing.
Support section 301, coupling part 302 and mounting portion 303 can manufacture in global formation, it is also possible to separately formed, be then fixedly connected.
Refer to Fig. 7 A, it illustrates liner 206 and the top view of pedestal 205, wherein, partial ventilation hole on liner 206 is blocked by the coupling part 302 of the pedestal 205 of lower section, refers to Fig. 7 B, it illustrates the schematic cross-section of liner 206 and pedestal 205 on B-B direction in fig. 7, wherein, pedestal 205 is positioned at the lower section of liner 206 and blocking due to pedestal 205 so that the drain being positioned at the partial ventilation hole above pedestal 205 receives obstruction. But, owing to the coupling part 302 of pedestal 205 is non-wide fan ring design, and, fan-shaped side radially designs, fan-shaped segment angle is consistent with the segment angle of liner 206 corresponding part, it is the directions of rays by the center of circle, even thus the air vent of the liner 206 after being blocked by the coupling part 302 of pedestal 205, in radially still symmetrically state, therefore the air flow direction extracted out by air vent is still that uniformly diametrically, thus increasing the radially uniform property of pedestal 205 overhead stream distribution, reach to improve the purpose of process uniformity.
Being provided with the cavity 207 of hollow in coupling part 302 and mounting portion 303, described cavity 207 is for holding electrostatic chuck 203 and being connected externally to the connecting line that connects, for instance the gas circuit needed for conveying process gas and the circuit connecting wire etc. needed for electrostatic chuck 203.
In the present embodiment, the air vent on liner 206 is radially uniformly distributed along the radial direction of liner 206, and air vent be shaped as strip. Air vent on liner 206 is it can also be provided that the distribution of other forms, for instance, the upper section at corresponding pedestal 205 arranges the air vent of more crypto set, thus promoting the exhaust capacity above pedestal 205, thus improve the circumferential uniformity of liner 206 simultaneously.
Preferably, the pedestal 205 of the present invention can be aluminium base, it is also possible to be the pedestal of other materials.
It is understood that the principle that is intended to be merely illustrative of the present of embodiment of above and the illustrative embodiments that adopts, but the invention is not limited in this. For those skilled in the art, without departing from the spirit and substance in the present invention, it is possible to make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (10)
1. a reaction chamber, including chamber, it is positioned at the electrostatic chuck of described chamber interior, liner and pedestal, described pedestal is used for supporting described electrostatic chuck, described interior lining is provided with multiple air vent, it is characterized in that, described pedestal includes support section, coupling part and mounting portion, wherein:
Described support section is positioned at immediately below described electrostatic chuck and supports described electrostatic chuck;
The side of described coupling part is connected with described support section, and described coupling part is point to from chamber wall to be gradually reduced the direction at chamber center at the width of the orthographic projection of described interior lining;
Described mounting portion is connected with the opposite side of described coupling part, and described mounting portion for being fixed on the sidewall of described chamber by described pedestal.
2. reaction chamber as claimed in claim 1, it is characterised in that described coupling part is fan ring in the orthographic projection of described interior lining.
3. reaction chamber as claimed in claim 2, it is characterised in that the dual-side of described fan ring is radially arranged, consistent with the distribution of described interior lining radial air vent.
4. reaction chamber as claimed in claim 2, it is characterised in that the central angle of described fan ring is 1 degree to 3 degree.
5. reaction chamber as claimed in claim 1, it is characterised in that described coupling part and be provided with the cavity of hollow in described mounting portion, described cavity is for holding the circuit connecting wire of gas circuit needed for conveying process gas and/or electrostatic chuck.
6. reaction chamber as claimed in claim 1, it is characterised in that described support section, coupling part and mounting portion global formation during fabrication.
7. reaction chamber as claimed in claim 1, it is characterised in that on described mounting portion, the surface away from side, described coupling part is plane.
8. reaction chamber as claimed in claim 1, it is characterised in that the height of described mounting portion is equal to the height of described coupling part, and the width of described mounting portion is less than the width of described coupling part.
9. reaction chamber as claimed in claim 1, it is characterised in that described air vent is radially uniformly distributed along the radial direction of liner, and described air vent be shaped as strip.
10. reaction chamber as claimed in any one of claims 1-9 wherein, it is characterised in that described pedestal is aluminium base.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210469162.0A CN103824745B (en) | 2012-11-19 | 2012-11-19 | A kind of reaction chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210469162.0A CN103824745B (en) | 2012-11-19 | 2012-11-19 | A kind of reaction chamber |
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| Publication Number | Publication Date |
|---|---|
| CN103824745A CN103824745A (en) | 2014-05-28 |
| CN103824745B true CN103824745B (en) | 2016-06-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210469162.0A Active CN103824745B (en) | 2012-11-19 | 2012-11-19 | A kind of reaction chamber |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110534391B (en) * | 2018-05-23 | 2022-04-22 | 北京北方华创微电子装备有限公司 | Cavity lining, reaction cavity and semiconductor processing equipment |
| CN112509901B (en) * | 2020-11-19 | 2022-03-22 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor process equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101842870A (en) * | 2007-09-04 | 2010-09-22 | 株式会社Eugene科技 | Substrate processing apparatus |
| CN101996842A (en) * | 2009-08-18 | 2011-03-30 | 显示器生产服务株式会社 | Plasma etching device |
| CN102438390A (en) * | 2010-09-06 | 2012-05-02 | 东京毅力科创株式会社 | Antenna unit and inductively coupled plasma processing apparatus |
-
2012
- 2012-11-19 CN CN201210469162.0A patent/CN103824745B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101842870A (en) * | 2007-09-04 | 2010-09-22 | 株式会社Eugene科技 | Substrate processing apparatus |
| CN101996842A (en) * | 2009-08-18 | 2011-03-30 | 显示器生产服务株式会社 | Plasma etching device |
| CN102438390A (en) * | 2010-09-06 | 2012-05-02 | 东京毅力科创株式会社 | Antenna unit and inductively coupled plasma processing apparatus |
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| Publication number | Publication date |
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| CN103824745A (en) | 2014-05-28 |
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Address after: 100176 No. 8, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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