CN103824745A - Reaction chamber - Google Patents
Reaction chamber Download PDFInfo
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- CN103824745A CN103824745A CN201210469162.0A CN201210469162A CN103824745A CN 103824745 A CN103824745 A CN 103824745A CN 201210469162 A CN201210469162 A CN 201210469162A CN 103824745 A CN103824745 A CN 103824745A
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- coupling part
- reaction chamber
- chamber
- mounting portion
- liner
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Abstract
The invention discloses a reaction chamber. The reaction chamber comprises a chamber, an electrostatic chuck located inside the chamber, a liner and a base; the base is used for supporting the electrostatic chuck; the liner is provided with a plurality of ventilation holes; and the base comprises a supporting part, a connection part and a mounting part, wherein the supporting part is located just below the electrostatic chuck and supports the electrostatic chuck, one side of the connecting part is connected with the supporting part, the width of the orthographic projection of the connecting part on the liner is gradually decreased in a direction from the wall of the chamber to the center of the chamber, and the mounting part is connected with the other side of the connecting part and is used for fixing the base on the side wall of the chamber. According to the reaction chamber of the invention, the connection part is unequal in width, such that occlusion on the liner above can be alleviated, and the radial symmetry of the ventilation holes on the liner above the base can be improved, and therefore, the radial uniformity of airflow distribution above the base can be increased, and process uniformity can be improved.
Description
Technical field
The present invention relates to semiconductor equipment manufacturing technology field, particularly a kind of reaction chamber for plasma etching equipment.
Background technology
The development of modern integrated circuits constantly proposes higher requirement to the integrated level of chip, is included in integrated more semiconductor components and devices on one chip, thereby makes chip have higher current densities.In order to obtain higher current densities, need to reduce the critical size of semiconductor components and devices.Along with the minimizing of critical size, make the manufacture of semiconductor components and devices more difficult, in order to improve rate of finished products, process uniformity on silicon chip is had higher requirement.In plasma etching industrial, air-flow is a key factor that affects process uniformity.
Fig. 1 shows a kind of structure diagram of reaction chamber of the plasma etching machine that adopts lower pumping mode, as shown in Figure 1, this plasma etching machine comprises chamber 101, air inlet 102, electrostatic chuck 103, silicon chip 104, aluminium base 105, liner 106 and gas outlet 107.Wherein, process gas enters chamber 101 from air inlet 102, and be activated into plasma, plasma is limited near certain area silicon chip 104 by liner 106, and there is chemical reaction with silicon chip 104, reacted gas is taken away from the gas outlet 107 of chamber by vacuum pump by the ventilation hole on liner 106.In this process, due to the drainage of liner 106 to gas, make plasma on the circumferencial direction of silicon chip 104, form annular airflow field, thereby fully react with silicon chip 104.
Fig. 2 A shows the vertical view of liner 106, and as shown in Figure 2 A, the ventilation hole of offering on liner 106 presents radioactivity and is uniformly distributed, and the passage that these ventilation holes are crossed as gas flow plays the effect of drainage.Fig. 2 B shows the vertical view of aluminium base 105, and as shown in Figure 2 B, aluminium base 105 comprises the mounting portion of the wide design of support section and the right of left side toroidal.Fig. 3 A shows the vertical view of liner 106 and aluminium base 105, and as shown in Figure 3A, the part ventilation hole being inside lining with is blocked by the aluminium base 105 of below.Fig. 3 B shows in Fig. 3 A the schematic cross-section of liner 106 and aluminium base 105 in A-A direction, and wherein, aluminium base 105 is positioned at the below of liner 106, and due to the blocking of aluminium base 105, makes the drainage of aluminium base 105 top liners 106 become inhomogeneous.From Fig. 3 A and Fig. 3 B, can find out, because part ventilation hole on liner 106 is blocked by the aluminium base 105 of below, make the air-flow of extracting out by ventilation hole radially upwards all inhomogeneous with week, thus cause air-flow silicon chip 104 radially with upwards asymmetric of week, affect the uniformity of technique.
For inhomogeneous improvement the to due to the caused gas of blocking of aluminium base, Chinese patent literature 1(publication number: 200980112419.3.A) a kind of " have the current equalizer of integration and have the conductive lower inner liner part of improvement " disclosed.Refer to Fig. 4, it shows the structural representation of disclosed inner piece in document 1, as shown in Figure 4, on inner piece in document 1, be distributed with the pore of multiple radial bar shapeds, these pores are not evenly distributed, but there is higher density at the pore of 501 parts, this part holes is positioned over to the top of aluminium base support section, can increase the exhaust capacity in this region, alleviate the impact on airflow homogeneity of blocking due to liner below aluminium base, thereby reach the uniformity that improvement circumferentially bleeds, the object that improves process uniformity.Although this inner lining structure can improve the uniformity of circumferentially bleeding, due to the inhomogeneities that the bar hole of radial liner distributes, cause the uniformity of radially bleeding not improve.
Summary of the invention
For at least one of addressing the above problem, the invention provides a kind of reaction chamber, in this reaction chamber, the pedestal of liner below width on the direction of pointing to chamber center from chamber wall reduces gradually, make pedestal top in the ventilation hole that is lining with symmetry be diametrically improved, thereby the radially uniformity that increase pedestal top air-flow distributes, improves process uniformity.
For solving the problems of the technologies described above, the invention provides a kind of reaction chamber, comprise chamber, be positioned at electrostatic chuck, liner and the pedestal of described chamber interior, described pedestal is used for supporting described electrostatic chuck, in described, be lining with and be provided with multiple ventilation holes, described pedestal comprises support section, coupling part and mounting portion, wherein: described support section is positioned under described electrostatic chuck and supports described electrostatic chuck;
One side of described coupling part is connected with described support section, and the width of the orthographic projection that is lining with in described of described coupling part is to reduce gradually from chamber wall points to the direction at chamber center;
Described mounting portion is connected with the opposite side of described coupling part, and described mounting portion is for being fixed on described pedestal the sidewall of described chamber.
Preferably, the orthographic projection that described coupling part is lining with in described is fan ring.
Preferably, the dual-side of described fan ring radially arranges, with described in be lining with radial ventilation hole and distribute consistent.
Preferably, the central angle of described fan ring is 30 degree to 60 degree.
Preferably, be provided with the cavity of hollow in described coupling part and described mounting portion, described cavity is for holding the circuit connecting wire of the required gas circuit of delivery technology gas and/or electrostatic chuck.
Preferably, described support section, coupling part and mounting portion global formation during fabrication.
Preferably, on described mounting portion, be plane away from the surface of described coupling part one side.
Preferably, the height of described mounting portion equals the height of described coupling part, and the width of described mounting portion is less than the width of described coupling part.
Preferably, described ventilation hole is radial along the radial direction of liner and is uniformly distributed, and described ventilation hole be shaped as strip.
Preferably, described pedestal is aluminium base.
The present invention has following beneficial effect:
Pedestal in reaction chamber provided by the present invention comprises support section, coupling part and mounting portion, coupling part reduces gradually at the interior orthographic projection being lining with width on the direction of pointing to chamber center from chamber wall, by coupling part is adopted to non-so wide design, improve blocking top liner, make pedestal top in the ventilation hole that is lining with symmetry be diametrically improved, thereby the radially uniformity that increase pedestal top air-flow distributes, has improved process uniformity.
Accompanying drawing explanation
Fig. 1 is the structural representation of the reaction chamber of the plasma etching machine of lower pumping mode in prior art;
Fig. 2 A is the schematic top plan view of liner in prior art;
Fig. 2 B is the schematic top plan view of aluminium base in prior art;
Fig. 3 A is the schematic top plan view of liner and aluminium base in prior art;
Fig. 3 B is the schematic cross-section of liner and aluminium base in A-A direction in Fig. 3 A;
Fig. 4 is the structural representation of disclosed a kind of inner piece in prior art;
The structural representation of the reaction chamber that Fig. 5 provides for the embodiment of the present invention;
The schematic top plan view of pedestal in the reaction chamber that Fig. 6 provides for the embodiment of the present invention;
The liner that Fig. 7 A provides for the embodiment of the present invention and the schematic top plan view of aluminium base;
Fig. 7 B is the schematic cross-section of liner and aluminium base in B-B direction in Fig. 7 A.
Embodiment
For making those skilled in the art understand better technical scheme of the present invention, the reaction chamber embodiment of the present invention being provided below in conjunction with accompanying drawing is illustrated in detail.
The structural representation of the reaction chamber that Fig. 5 provides for the embodiment of the present invention.Refer to Fig. 5, the reaction chamber that the present embodiment provides comprises: chamber 201, the electrostatic chuck 203 that is positioned at chamber 201 inside, liner 206 and pedestal 205, described pedestal 205, for supporting and fix described electrostatic chuck 203, is provided with multiple ventilation holes on described liner 206.
The vertical view of the pedestal 205 that Fig. 6 provides for the embodiment of the present invention, refers to Fig. 6, and described pedestal comprises support section 301, coupling part 302 and mounting portion 303, wherein:
Support section 301 is positioned under described electrostatic chuck 203 and for supporting electrostatic chuck 203.In the present embodiment, support section 301 is annular, can be also other shapes.The size of annular and the size of electrostatic chuck match.
One side of coupling part 302 is connected with support section 301, and opposite side is connected with mounting portion 303.In order to make the air-flow of electrostatic chuck 203 tops more even, the orthographic projection of coupling part 302 on described liner 206 forms the shape that width reduces gradually the direction at chamber wall sensing chamber center.By such design, make pedestal 205 in providing support for electrostatic chuck 203, improve blocking top liner, make pedestal top in the ventilation hole that is lining with symmetry be diametrically improved, thereby the radially uniformity that increase pedestal top air-flow distributes, reaches the object that improves process uniformity.
Preferably, the orthographic projection of coupling part 302 on liner 206 is fan ring, and the dual-side of above-mentioned fan ring radially arranges, and distributes and is consistent with the radial ventilation hole on liner 206.In the present embodiment, be radial with the ventilation hole on liner 206 along the radial direction of liner 206 and be uniformly distributed, and the strip that is shaped as of ventilation hole is that example describes.The angle that two adjacent ventilation holes form is approximately 1 degree to 3 degree, and for this liner 206, the central angle of fan ring is 25 degree to 50 degree.In the time that the size of liner 206 adopting or type change, this central angle can produce corresponding change.
Mounting portion 303 is connected with a side of coupling part 302, and opposite side is connected with the sidewall of chamber 201, thereby pedestal 205 is fixed on the sidewall of described chamber 201.
The height of coupling part 302 is about 100cm.
The height of support section 301 and mounting portion 303 is identical with the height of coupling part 302, is also about 100cm.
In Fig. 6, protrude from described coupling part 302 mounting portion 303, and it seems along the direction at the sidewall perpendicular to chamber 201 and sensing chamber 201 centers, and the width of mounting portion 303 is less than the width of coupling part 302.
In the present embodiment take the coupling part 302 of liner below for fan ring, take mounting portion 303, for the structure of encircling protrusion from fan is illustrated, and to make mounting portion 303 one side relative with chamber 201 sidewalls be plane, to facilitate installation.In other embodiments, coupling part 302 and mounting portion 303 can be also the fan rings of one, and utilize the fan ring outside cambered surface relative with chamber 201 sidewalls to install, or the fan ring outside cambered surface relative with chamber 201 sidewalls is set to plane in whole or in part, thereby installs.
Support section 301, coupling part 302 and mounting portion 303 can manufacture in global formation, also moulding separately, is then fixed connection.
Refer to Fig. 7 A, it shows the vertical view of liner 206 and pedestal 205, wherein, part ventilation hole on liner 206 is blocked by the coupling part 302 of the pedestal 205 of below, refers to Fig. 7 B, and it shows in Fig. 7 A the schematic cross-section of liner 206 and pedestal 205 in B-B direction, wherein, pedestal 205 is positioned at the below of liner 206, and due to the blocking of pedestal 205, makes the drainage of the part ventilation hole that is positioned at pedestal 205 tops be subject to obstruction.But, because the coupling part 302 of pedestal 205 is non-wide fan ring design, and, fan-shaped side radially designs, fan-shaped segment angle is consistent with the segment angle of liner 206 corresponding parts, be the directions of rays by the center of circle, even thereby the ventilation hole of the liner 206 after being blocked by the coupling part 302 of pedestal 205, radially still be symmetry status, therefore the air flow direction of extracting out by ventilation hole is still uniform diametrically, thereby increase the radially uniformity that pedestal 205 top air-flows distribute, reach the object that improves process uniformity.
In coupling part 302 and mounting portion 303, be provided with the cavity 207 of hollow, described cavity 207 such as, for holding electrostatic chuck 203 and the outside connecting line being connected, the circuit connecting wire that the gas circuit that delivery technology gas is required and electrostatic chuck 203 are required etc.
In the present embodiment, the ventilation hole on liner 206 is radial along the radial direction of liner 206 and is uniformly distributed, and ventilation hole be shaped as strip.Ventilation hole on liner 206 also can be set to the distribution of other forms, for example, at the upper section of corresponding pedestal 205, the more ventilation hole of crypto set is set, thereby promotes the exhaust capacity of pedestal 205 tops, thereby improves the circumferential uniformity of liner 206 simultaneously.
Preferably, pedestal 205 of the present invention can be aluminium base, can be also the pedestal of other materials.
Be understandable that, above execution mode is only used to principle of the present invention is described and the illustrative embodiments that adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (10)
1. a reaction chamber, comprise chamber, be positioned at electrostatic chuck, liner and the pedestal of described chamber interior, described pedestal is used for supporting described electrostatic chuck, in described, be lining with and be provided with multiple ventilation holes, it is characterized in that, described pedestal comprises support section, coupling part and mounting portion, wherein:
Described support section is positioned under described electrostatic chuck and supports described electrostatic chuck;
One side of described coupling part is connected with described support section, and the width of the orthographic projection that is lining with in described of described coupling part is to reduce gradually from chamber wall points to the direction at chamber center;
Described mounting portion is connected with the opposite side of described coupling part, and described mounting portion is for being fixed on described pedestal the sidewall of described chamber.
2. reaction chamber as claimed in claim 1, is characterized in that, the orthographic projection that described coupling part is lining with in described is fan ring.
3. reaction chamber as claimed in claim 2, is characterized in that, the dual-side of described fan ring radially arranges, with described in be lining with radial ventilation hole and distribute consistent.
4. reaction chamber as claimed in claim 2, is characterized in that, the central angle of described fan ring is 1 degree to 3 degree.
5. reaction chamber as claimed in claim 1, is characterized in that, is provided with the cavity of hollow in described coupling part and described mounting portion, and described cavity is for holding the circuit connecting wire of the required gas circuit of delivery technology gas and/or electrostatic chuck.
6. reaction chamber as claimed in claim 1, is characterized in that, described support section, coupling part and mounting portion global formation during fabrication.
7. reaction chamber as claimed in claim 1, is characterized in that, on described mounting portion, is plane away from the surface of described coupling part one side.
8. reaction chamber as claimed in claim 1, is characterized in that, the height of described mounting portion equals the height of described coupling part, and the width of described mounting portion is less than the width of described coupling part.
9. reaction chamber as claimed in claim 1, is characterized in that, described ventilation hole is radial along the radial direction of liner and is uniformly distributed, and described ventilation hole be shaped as strip.
10. reaction chamber as claimed in any one of claims 1-9 wherein, is characterized in that, described pedestal is aluminium base.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210469162.0A CN103824745B (en) | 2012-11-19 | 2012-11-19 | A kind of reaction chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210469162.0A CN103824745B (en) | 2012-11-19 | 2012-11-19 | A kind of reaction chamber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103824745A true CN103824745A (en) | 2014-05-28 |
| CN103824745B CN103824745B (en) | 2016-06-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201210469162.0A Active CN103824745B (en) | 2012-11-19 | 2012-11-19 | A kind of reaction chamber |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110534391A (en) * | 2018-05-23 | 2019-12-03 | 北京北方华创微电子装备有限公司 | Cavity inner lining, reaction chamber and semiconductor processing equipment |
| WO2022105794A1 (en) * | 2020-11-19 | 2022-05-27 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor process device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090024522A (en) * | 2007-09-04 | 2009-03-09 | 주식회사 유진테크 | Substrate processing unit |
| KR101091309B1 (en) * | 2009-08-18 | 2011-12-07 | 주식회사 디엠에스 | Plasma etching device |
| JP5597071B2 (en) * | 2010-09-06 | 2014-10-01 | 東京エレクトロン株式会社 | Antenna unit and inductively coupled plasma processing apparatus |
-
2012
- 2012-11-19 CN CN201210469162.0A patent/CN103824745B/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110534391A (en) * | 2018-05-23 | 2019-12-03 | 北京北方华创微电子装备有限公司 | Cavity inner lining, reaction chamber and semiconductor processing equipment |
| CN110534391B (en) * | 2018-05-23 | 2022-04-22 | 北京北方华创微电子装备有限公司 | Cavity lining, reaction cavity and semiconductor processing equipment |
| WO2022105794A1 (en) * | 2020-11-19 | 2022-05-27 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor process device |
| KR20230088483A (en) * | 2020-11-19 | 2023-06-19 | 베이징 나우라 마이크로일렉트로닉스 이큅먼트 씨오., 엘티디. | Process Chambers and Semiconductor Process Devices |
| TWI809566B (en) * | 2020-11-19 | 2023-07-21 | 大陸商北京北方華創微電子裝備有限公司 | Process chamber and semiconductor process equipment |
| KR102643212B1 (en) | 2020-11-19 | 2024-03-05 | 베이징 나우라 마이크로일렉트로닉스 이큅먼트 씨오., 엘티디. | Process chambers and semiconductor process devices |
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| Publication number | Publication date |
|---|---|
| CN103824745B (en) | 2016-06-08 |
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Address after: 100176 No. 8, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |