CN110534391A - Cavity inner lining, reaction chamber and semiconductor processing equipment - Google Patents
Cavity inner lining, reaction chamber and semiconductor processing equipment Download PDFInfo
- Publication number
- CN110534391A CN110534391A CN201810500593.6A CN201810500593A CN110534391A CN 110534391 A CN110534391 A CN 110534391A CN 201810500593 A CN201810500593 A CN 201810500593A CN 110534391 A CN110534391 A CN 110534391A
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- China
- Prior art keywords
- vent
- vent board
- board
- sub
- blow
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
Abstract
The present invention relates to a kind of cavity inner linings, it include: along chamber axis and the main vent board by being set gradually on the direction at top to bottom and at least one sub- vent board, wherein, the main vent board and the sub- vent board include stopper and blow vent, the blow vent of one of vent board is blocked by the stopper of remaining at least one vent board, and gas free air space is respectively formed between two neighboring vent board.The present invention also provides a kind of reaction chamber and semiconductor processing equipment, plasma can be reduced well run out of from the blow vent of liner performing etching to other components, the particle that can also prevent etching from generating, which enters state space by the blow vent, influences technique.
Description
Technical field
The invention belongs to semiconductor equipment manufacturing technology fields, and in particular to a kind of cavity inner lining, reaction chamber and partly lead
Body process equipment.
Background technique
Plasma apparatus is widely used in integrated circuit (IC) or the manufacturing process of MEMS device, wherein most widely
Plasma device is inductively coupled plasma body (ICP) device.Contain a large amount of electronics, ion, excitation state in plasma
Atom, molecule and free radical isoreactivity particle, these active particles and silicon wafer interaction make material surface that various objects occur
Reason and chemical reaction, so that material surface property be made to be changed.
Currently, existing plasma cavity include: cavity, inlet duct, plasma generating device, liner, pedestal and
Exhaust apparatus.Wherein, in the cavity, in cavity top half formation process space, interior lining is provided with blow vent for liner setting；
Inlet duct is for conveying gas into state space；Pedestal is arranged in the cavity, is used for carrying substrates, and substrate is located at technique sky
In；For plasma generating device for exciting process gas to form plasma, plasma performs etching work to substrate
Skill；Exhaust apparatus is used to the gas in state space cavity is discharged from blow vent.
Existing plasma chamber has the following problems in practical applications: liner is to a certain extent by plasma
In state space, but still some plasma can enter the lower half portion of cavity from the blow vent of interior lining, from
And the components in cavity lower half portion can be caused to etch, the service life of these components is not only influenced, but also can generate
Grain, these particles, which might have partial particulate and enter to fall in state space, forms etch mask on substrate, influences original light
Pattern transfer is carved, to generate partial etch, reduces product yield.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art, a kind of cavity inner lining, anti-is proposed
Answer chamber and semiconductor processing equipment, can reduce well plasma from the blow vent of liner run out of to other components into
Row etching, the particle that can also prevent etching from generating, which enters state space by the blow vent, influences technique.
To solve the above problems, the present invention provides a kind of cavity inner linings, comprising: along chamber axis and by top to bottom
Direction on the main vent board that sets gradually and at least one sub- vent board, wherein
The main vent board and the sub- vent board include stopper and blow vent, the ventilation of one of vent board
Mouth is blocked by the stopper of remaining at least one vent board, and gas free air space is respectively formed between two neighboring vent board.
Preferably, comprising: main vent board and a sub- vent board, the blow vent are strip blow vent；
The blow vent of the main vent board has first edge line, the son in one end towards the sub- vent board
The blow vent adjacent with the first edge line of the blow vent of the main vent board of vent board, towards the main ventilation
One end of plate is respectively provided with opposite second edge line and third edge line；
Plane where the first edge line and the second edge line is formed with the plane where the sub- vent board
Angle be greater than 30 °, it is flat where plane where the first edge line and the third edge line and the sub- vent board
The angle that face is formed is less than 45 °.
Preferably, the range of the width T of the blow vent is in 1mm~6mm；Described between the two neighboring vent board
Distance >=0.5T in chamber axial direction.
Preferably, the depth bounds of each blow vent are in 5mm~15mm.
Preferably, the width T of the blow vent, any one vent board the two neighboring blow vent axis between
Distance L2, the distance H between the two neighboring vent board in the chamber axial direction, three meets following relationship:
Preferably, the main vent board is annular plate structure, and the sub- vent board is annular recess structure.
Preferably, the main vent board and the sub- vent board include multiple blow vents；
Multiple blow vents are along the circumferentially-spaced of the main vent board and are uniformly arranged, and the length of each blow vent
Spend direction being arranged radially along the main vent board；
Multiple blow vents are along the circumferentially-spaced of the sub- vent board and are uniformly arranged, and the length of each blow vent
Spend direction being arranged radially along the sub- vent board.
Preferably, comprising: the main vent board and the sub- vent board are grounded.
The present invention also provides a kind of reaction chamber, including chamber body and cavity inner lining, the cavity inner lining is arranged in institute
It states in chamber body, for forming the state space of limitation plasma distribution in the chamber body, cavity inner lining is used
The cavity inner lining of above-mentioned offer.
The present invention also provides a kind of semiconductor processing equipment, including reaction chamber, the reaction chamber uses above-mentioned offer
Reaction chamber.
The invention has the following advantages:
In the present invention, the blow vent of main vent board and the one of vent board of sub- vent board is by remaining at least one ventilation
The stopper of plate is blocked, and in other words, the blow vent mutual dislocation of main vent board and sub- vent board is arranged, this compared with the prior art in gas
For the transmission channel of body or plasma is vertical channel, no matter gas or plasma are spread out of or pass from state space
Enter, in transmission, path can all be stopped by stopper and path change occur, also can by a part of gas or plasma into
Row stops, thus can reduce plasma well and run out of from the blow vent of liner and perform etching to other components, may be used also
Enter state space by the blow vent with the particle for preventing etching from generating.
Detailed description of the invention
Fig. 1 is the top view of cavity inner lining provided in an embodiment of the present invention；
Fig. 2 is the cross-sectional view radially along Fig. 1；
Fig. 3 is the cross-sectional view of the line A-A along Fig. 2；
Fig. 4 is the structural schematic diagram of reaction chamber provided in an embodiment of the present invention.
Specific embodiment
To make those skilled in the art more fully understand technical solution of the present invention, come with reference to the accompanying drawing to the present invention
Cavity inner lining, reaction chamber and the semiconductor processing equipment of offer are described in detail.
Embodiment 1
Fig. 1 is the top view of cavity inner lining provided in an embodiment of the present invention；Fig. 2 is the cross-sectional view radially along Fig. 1；Figure
3 be the cross-sectional view of the line A-A along Fig. 2, and also referring to Fig. 1-3, cavity inner lining provided in an embodiment of the present invention includes chamber axis
Line and the main vent board 10 by being set gradually on the direction at top to bottom and at least one sub- vent board 11, wherein main ventilation
Plate 10 and sub- vent board 11 include stopper and blow vent, and main vent board 10 includes stopper 101 and blow vent 102, sub- vent board
Including stopper 111 and blow vent 112.The blow vent of main vent board plate 10 and the one of vent board of sub- vent board 11 is by it
The stopper of at least one remaining vent board is blocked, and gas free air space is respectively formed between two neighboring vent board.
Cavity inner lining 1 provided in an embodiment of the present invention, main vent board 10 and the one of vent board of sub- vent board 11 lead to
Port is blocked by the stopper of remaining at least one vent board, and in other words, the blow vent of main vent board 10 and sub- vent board 11 misplaces
Setting, this compared with the prior art in gas or plasma transmission channel be vertical channel for, no matter gas or plasma
Body is spread out of or is passed to from state space, and in transmission, path can all be stopped by stopper and path change occur, and also can
A part of gas or plasma are stopped, thus plasma can be reduced well and run from the blow vent of cavity inner lining
Other components are performed etching out, the particle that can also prevent etching from generating enters state space by the blow vent.
In the present embodiment, main vent board 10 and sub- vent board 11 are grounded, in this way, generated in the state space of chamber etc.
When gas ions, part plasma can hit the main vent board 10 of ground connection and bury in oblivion, and there are also part plasmas to pass through main ventilation
The blow vent 102 of plate 10 moves in the gas free air space of the formation between main vent board 10 and sub- vent board 11, thus
The stopper 111 positioned at the sub- vent board 11 of ground connection can be hit and buried in oblivion, therefore, it is grounded by main vent board 10 and sub- vent board 11,
It can also fall into oblivion while barrier plasma and knock out part plasma, pass through so as to further reduce plasma
The blow vent of vent board, which is run out of, etches other components.
Further, main vent board 10 and sub- vent board 11 adjacent thereto, two neighboring sub- vent board 11 are seperated knot
It structure and is fixedly connected, the junction of the two is provided with conductive solenoid 13 and 14, helps to ensure that electrical connection between the two
Property, to be grounded jointly.
Preferably, as shown in figure 3, the quantity of sub- vent board is 1, blow vent 102 and 112 is strip blow vent；It is main
The blow vent 101 of vent board 10 one end towards sub- vent board 11 have first edge line, sub- vent board 11 with main ventilation
The adjacent blow vent 112 of the first edge line of the blow vent of plate 10, is respectively provided with relatively towards one end of main vent board 10
Second edge line and third edge line；Plane where first edge line and second edge line (is put down represented by dotted line in Fig. 3
Face) angle α that is formed with the plane where sub- vent board 11 is greater than 30 °, the first edge line and the third edge line institute
The angle β that is formed with the plane where the sub- vent board 11 of plane (Fig. 3 chain lines indicate plane) less than 45 °.
It is understood that the region of two dotted line limits can be referred to as plasma shield region in Fig. 3, therefore, angle α
Smaller shield effectiveness is better, finally then fewer transmitted through the gas of blow vent and plasma；Two chain-dotted lines in Fig. 3 limit
Region be gas passage area, angle β is bigger, and the resistance that gas or plasma flow through is also smaller.Due in actual process,
Not only required in technique plasma it is less pass through the blow vent, also require after the completion of technique blow vent to have certain
Capacity is by the gas extraction after reaction to meet technique requirement, and therefore, being greater than 30 ° and β by above-mentioned α can be with less than 45 °
Meet this two requirements simultaneously.
It is further preferred that the range of the width T of blow vent 102 or 112 is in 1mm~6mm；Between two neighboring vent board
Distance H >=0.5T in chamber axial direction, in such manner, it is possible to the above-mentioned two requirement of further satisfaction.
It is further preferred that the corresponding depth H 1 of each blow vent 102 and 112 and the range of H2 be in 5mm~15mm, to protect
Card baffle buries in oblivion effect with plasma well.In the present embodiment, H1=H2=5mm.
Furthermore it is preferred that the axis of the two neighboring blow vent of the width T of blow vent 102 (112), any one vent board
Distance H between line between distance L2, two neighboring vent board in chamber axial direction, meets following relationship:
Meet the cavity inner lining of relation above, actual size, pumping and the plasma of differential responses chamber can not only be met
Shield effectiveness；And preparation method is relatively easy, and needs not distinguish between two baffles in assembling, it is only necessary to by two baffles
Blow vent arranged in dislocation.
In the present embodiment, specifically, main vent board 10 is annular plate structure, and sub- vent board 11 is annular recess knot
Structure, in this way, the internal ring wall and external annulus of annular recess structure 11 are fixed on the lower surface of main vent board 10, groove and main ventilation
The lower surface of plate 10 forms cricoid above-mentioned gas free air space.In addition, in this case, conductive solenoid 13 and 14 is arranged
At the internal ring wall and external annulus of annular recess structure 11 and the lower surface contact position of sub- vent board 11.
In addition, main ventilation can be passed through by being easily carried device by the main vent board 10 and sub- bucket gas plate 11 of ring structure
The annular distance of plate 10 and sub- bucket gas plate 11 is located at the loading end of bogey in the state space of chamber.
In the case where baffle 11 and 12 is ring structure, as depicted in figs. 1 and 2, main vent board 10 and the sub- ventilation
Plate 11 includes multiple blow vents；Multiple blow vents 102 are along the circumferentially-spaced of the main vent board 10 and uniformly set
It sets, and the length direction of each blow vent 102 being arranged radially along main vent board 10；Multiple blow vents 112 are along the sub- ventilation
It plate 11 circumferentially-spaced and is uniformly arranged, and the length direction of each blow vent 112 is along the radial direction of the sub- vent board 11
Setting.
Need it is described herein be, although blow vent 102,112 is strip in the present embodiment, the present invention not office
It is limited to this, in practical applications, blow vent 102,112 can also be other shapes, for example, the polygons such as round, rectangular, as long as
It can satisfy with ventilatory function.
Although should be noted that cavity inner lining is the main vent board 10 and son by separate structure in the present embodiment
What vent board 11 assembled, still, the present invention is not limited thereto, in practical applications, main vent board 10 and sub- vent board
11 can also be an integral structure.
Explanation is needed further exist for, main vent board 10 and sub- vent board 11 are made of aluminum alloy material and surface carries out
Hard anodizing processing, and Y is carried out on the surface for being likely to be exposed plasma2O3Spraying, to protect main 10 He of vent board
The surface of sub- vent board 11.
Although the quantity of the present embodiment neutron vent board 11 is 1, the present invention is not limited thereto, is actually answering
In, the quantity of sub- vent board 11 can also be 2 or more, and in the case, multiple sub- vent boards 11 are along chamber axis
The setting of direction interval, in this way, the blow vent of every sub- vent board 11 can both be blocked by the stopper of vent board adjacent thereto,
It can be blocked by the baffle of other non-adjacent vent boards.
Also need it is described herein be, as shown in Fig. 2, the fringe region edge of the upper surface of the main vent board 10 of ring structure
Chamber axis direction is formed with circular retaining wall 103, is formed with along chamber in extension one end of barricade radially towards extending on the outside of chamber
Annular adjutage 104, in use, annular adjutage 104 can be overlapped on the side wall of chamber, in this way, cavity inner lining is in chamber
Interior can form the state space for carrying out technique.In practical applications, circular retaining wall 103 and annular adjutage 104 can be with masters
Vent board 10 is integrally formed, and can also be assembled.
Embodiment 2
Fig. 4 is the structural schematic diagram of reaction chamber provided in an embodiment of the present invention, referring to Fig. 4, the embodiment of the present invention mentions
The reaction chamber of confession, including cavity 2 and liner 1, liner 1 is arranged in cavity 2, for limiting out the work of substrate in cavity 2
Skill region；The cavity inner lining 1 that liner 1 is provided using above-described embodiment 1.
Specifically, reaction chamber further include: bogey 3 and induction coil 4, bogey 3 are arranged in cavity 1, hold
It carries and sets the annular distance that 3 pass through the main vent board 10 and sub- vent board 11 loading end of bogey 3 is made to be located at state space A
It is interior；The roof of cavity is arranged in induction coil 4, is connected with radio-frequency power supply, excites to be formed for the indoor gas of provocative reaction chamber
Plasma.
In addition, the annular adjutage 104 of cavity inner lining 1 is fixed on the side wall of cavity,.
Reaction chamber provided in an embodiment of the present invention, the cavity inner lining for using above-described embodiment 1 to provide therefore can be with
Improve processing quality.
Embodiment 3
The embodiment of the present invention also provides a kind of semiconductor processing equipment, including reaction chamber, and the reaction chamber is using upper
The reaction chamber of the offer of embodiment 2 is provided.
Semiconductor processing equipment can be but be not limited to: etching apparatus, vapor deposition apparatus etc..
Semiconductor processing equipment provided in an embodiment of the present invention uses reaction chamber provided by the above embodiment, therefore,
Processing quality can be improved.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of cavity inner lining characterized by comprising along chamber axis and by setting gradually on the direction at top to bottom
Main vent board and at least one sub- vent board, wherein
The main vent board and the sub- vent board include stopper and blow vent, the blow vent quilt of one of vent board
The stopper of remaining at least one vent board is blocked, and gas free air space is respectively formed between two neighboring vent board.
2. cavity inner lining according to claim 1 characterized by comprising main vent board and a sub- vent board, it is described
Blow vent is strip blow vent；
The blow vent of the main vent board has first edge line, the sub- ventilation in one end towards the sub- vent board
The blow vent adjacent with the first edge line of the blow vent of the main vent board of plate, towards the main vent board
One end is respectively provided with opposite second edge line and third edge line；
The folder that the plane where plane and the sub- vent board where the first edge line and the second edge line is formed
Angle is greater than 30 °, the planar shaped where plane and the sub- vent board where the first edge line and the third edge line
At angle less than 45 °.
3. cavity inner lining according to claim 2, which is characterized in that the range of the width T of the blow vent 1mm~
6mm；
Distance >=0.5T between the two neighboring vent board in the chamber axial direction.
4. cavity inner lining according to claim 1, which is characterized in that the depth bounds of each blow vent are in 5mm
~15mm.
5. cavity inner lining according to claim 2, which is characterized in that width T, any one vent board of the blow vent
The distance between the axis of the two neighboring blow vent between L2, the two neighboring vent board in the chamber axial direction
Distance H, three meets following relationship:
6. cavity inner lining described in -5 any one according to claim 1, which is characterized in that the main vent board is annular plate
Structure, the sub- vent board are annular recess structure.
7. cavity inner lining according to claim 6, which is characterized in that the main vent board and the sub- vent board include
Multiple blow vents；
Multiple blow vents are along the circumferentially-spaced of the main vent board and are uniformly arranged, and the length side of each blow vent
To being arranged radially along the main vent board；
Multiple blow vents are along the circumferentially-spaced of the sub- vent board and are uniformly arranged, and the length side of each blow vent
To being arranged radially along the sub- vent board.
8. cavity inner lining according to claim 1 characterized by comprising the main vent board and the sub- vent board
It is grounded.
9. a kind of reaction chamber, which is characterized in that including chamber body and cavity inner lining, the cavity inner lining is arranged in the chamber
In the ontology of room, for forming the state space of limitation plasma distribution in the chamber body, the cavity inner lining is used
Cavity inner lining described in claim 1-8 any one.
10. a kind of semiconductor processing equipment, including reaction chamber, which is characterized in that the reaction chamber uses claim 9 institute
The reaction chamber stated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810500593.6A CN110534391B (en) | 2018-05-23 | 2018-05-23 | Cavity lining, reaction cavity and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810500593.6A CN110534391B (en) | 2018-05-23 | 2018-05-23 | Cavity lining, reaction cavity and semiconductor processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110534391A true CN110534391A (en) | 2019-12-03 |
| CN110534391B CN110534391B (en) | 2022-04-22 |
Family
ID=68657760
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810500593.6A Active CN110534391B (en) | 2018-05-23 | 2018-05-23 | Cavity lining, reaction cavity and semiconductor processing equipment |
Country Status (1)
| Country | Link |
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| CN (1) | CN110534391B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111243991A (en) * | 2020-01-15 | 2020-06-05 | 北京北方华创微电子装备有限公司 | Lining and semiconductor processing equipment |
| CN111383896A (en) * | 2018-12-29 | 2020-07-07 | 北京北方华创微电子装备有限公司 | Lining and reaction chamber |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101197249A (en) * | 2006-12-06 | 2008-06-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction cavity lining and reaction cavity including the same |
| CN101577216A (en) * | 2008-05-09 | 2009-11-11 | 显示器生产服务株式会社 | Plasma reactor |
| US20110287632A1 (en) * | 2010-05-21 | 2011-11-24 | Lam Research Corporation | Movable chamber liner plasma confinement screen combination for plasma processing apparatuses |
| CN103824745A (en) * | 2012-11-19 | 2014-05-28 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber |
| US20170345623A1 (en) * | 2013-03-15 | 2017-11-30 | Applied Materials, Inc. | Apparatus and methods for reducing particles in semiconductor process chambers |
-
2018
- 2018-05-23 CN CN201810500593.6A patent/CN110534391B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101197249A (en) * | 2006-12-06 | 2008-06-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction cavity lining and reaction cavity including the same |
| CN101577216A (en) * | 2008-05-09 | 2009-11-11 | 显示器生产服务株式会社 | Plasma reactor |
| US20110287632A1 (en) * | 2010-05-21 | 2011-11-24 | Lam Research Corporation | Movable chamber liner plasma confinement screen combination for plasma processing apparatuses |
| CN103824745A (en) * | 2012-11-19 | 2014-05-28 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber |
| US20170345623A1 (en) * | 2013-03-15 | 2017-11-30 | Applied Materials, Inc. | Apparatus and methods for reducing particles in semiconductor process chambers |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111383896A (en) * | 2018-12-29 | 2020-07-07 | 北京北方华创微电子装备有限公司 | Lining and reaction chamber |
| CN111383896B (en) * | 2018-12-29 | 2023-10-13 | 北京北方华创微电子装备有限公司 | Lining and reaction chamber |
| CN111243991A (en) * | 2020-01-15 | 2020-06-05 | 北京北方华创微电子装备有限公司 | Lining and semiconductor processing equipment |
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| Publication number | Publication date |
|---|---|
| CN110534391B (en) | 2022-04-22 |
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