CN101315880B - Gas distribution device and plasma processing apparatus adopting the same - Google Patents
Gas distribution device and plasma processing apparatus adopting the same Download PDFInfo
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- CN101315880B CN101315880B CN2008101167961A CN200810116796A CN101315880B CN 101315880 B CN101315880 B CN 101315880B CN 2008101167961 A CN2008101167961 A CN 2008101167961A CN 200810116796 A CN200810116796 A CN 200810116796A CN 101315880 B CN101315880 B CN 101315880B
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Abstract
The invention discloses a gas distribution device, comprising: a gas inlet board, an embedded distributing plate and a lower distributing plate, wherein, the gas inlet board is provided with a gas inlet channel and a containing part which is communicated with the gas inlet channel, the embedded distribution board is embedded in the containing part; the embedded distributing plate is provided with a distribution channel and has a gap with the containing part; the lower distributing plate is positioned below the gas inlet board, and packages the embedded distributing plate in the containing part. Accordingly, the invention further discloses a plasma processing device which adopts the gas distribution device. The gas distribution device has simple structure, lower requirements on the processing precision and can reduce the manufacturing cost.
Description
Technical field
The present invention relates to technical field of plasma, particularly a kind of gas distributing device of apparatus for processing plasma and adopt the apparatus for processing plasma of this gas distributing device.
Background technology
In plasma treatment facilities such as plasma etching, thin film deposition, be typically provided with gas distributing device, be used for etching gas or reacting gas are delivered in the vacuum chamber.Can gas distributing device realize that the uniform distribution of gas is directly connected to the result of plasma-treating technology, for example, if being used for the reacting gas of deposit film can not be uniformly distributed in the vacuum chamber, the film gauge uniformity that then may cause depositing formation is relatively poor, thereby can not reach designing requirement.
As shown in Figure 1, a kind of in semiconductor technology widely used parallel-plate plasma equipment.This equipment comprises vacuum chamber, be located at the gas distributing device at the top in the vacuum chamber, be located at the top electrode on the described gas distributing device, the bottom electrode relative with described top electrode, described bottom electrode is connected with vacuum chamber radio-frequency power supply outward, process gas enters vacuum chamber (certainly, the specific constructive form of apparatus for processing plasma can have multiple, is not limited thereto) through gas distributing device.When carrying out technology, workpiece to be processed is placed on the described bottom electrode, add radio-frequency (RF) energy by radio-frequency power supply to electrode, make the gas ionization in the vacuum chamber between top electrode and the bottom electrode, thereby the generation plasma, described plasma is processed the workpiece that is positioned on the bottom electrode.Gas distributing device is evenly distributed to space on the wafer surface with gas, thereby is inspired uniform plasma by radio-frequency (RF) energy, just can obtain the uniform processing effect.Along with the development of manufacturing technology, the size of substrate increases gradually, the corresponding increase of the volume of vacuum chamber, and this causes the uniform distribution of gas in greater room to become difficult more, has further improved the design difficulty of gas distributing device.
Fig. 2 is the decomposing schematic representation of the disclosed a kind of gas distributing device of prior art, and Fig. 3 is the partial enlarged drawing of this gas distributing device.This gas distributing device comprises: be provided with the gas distribution plate 208 of a large amount of through holes, the annular upper electrode 206 on the gas distribution plate 208, the parts 234 on the top electrode 206, the inlet plate 205 on the parts 234; Intake channel 230 and edge intake channel 212 in the middle of wherein inlet plate 205 is provided with.Parts 234 are provided with a large amount of raised cylinder 246 towards the one side of top electrode 206, and in the top electrode 206 relatively the position of cylinder 246 be provided with a large amount of equally distributed through holes (among the figure not label), and the diameter of cylinder 246 is less than the diameter of described through hole, makes the cylinder 246 that back part 234 is installed can enter in the through hole in the top electrode 206.Fig. 3 be parts 234 with gas distribution plate 208 assemblings after through hole and the partial enlarged drawing of cylinder cooperation position, as seen, the center line of through hole 247 and cylinder 246 overlaps substantially, cylinder 246 pierces among the through hole 247, and and through hole 247 between form gap 248, this gap 248 can make the gas stream mistake.Gas enters inner chamber between parts 234 and the top electrode 206 (among the figure for illustrating) by middle intake channel 230 on the inlet plate 205 and edge intake channel 212, through the gap 248 between described through hole 247 and the cylinder 246, by gas distribution plate 208, be dispensed to uniformly in the vacuum chamber of gas distribution plate 208 belows again.
The above-mentioned gas distributor makes the gap 248 of gas stream between a large amount of equally distributed cylinders 246 and through hole 247 that enters, thereby reach the purpose of uniform distribution gas, yet problem is, the position of cylinder 246 and through hole 247 and size should be corresponding mutually, can guarantee that just parts 234 and gas distribution plate 208 assembling backs form described gap 248, for example, design gaps is 1mm, then cylinder 246 diameters are 3mm, the diameter of through hole is 5mm, and the center line of cylinder 246 should be just and the central lines of through hole 247, so, parts 234 with a large amount of raised cylinder, and the difficulty of processing of gas distribution plate 208 with a large amount of through holes is bigger, thereby cause the higher manufacturing cost of gas distributing device.
Summary of the invention
The problem that the present invention solves provides a kind of simple in structure, gas distributing device that manufacturing cost is lower.
Another problem that the present invention solves provides a kind of apparatus for processing plasma, has gas distributing device simple in structure, can reduce manufacturing cost.
For addressing the above problem, the invention provides a kind of gas distributing device, comprising: inlet plate, embedded distribution plate and lower distribution plate; Wherein, the holding part that described inlet plate is provided with intake channel and is communicated with intake channel, described embedded distribution plate embeds in the holding part; Described embedded distribution plate have distribution circuit and and holding part between have the gap; Lower distribution plate be positioned at inlet plate below, embedded distribution plate is encapsulated in the described holding part.
Described gap reduces gradually along the direction that gas flows in the gap.
Described embedded distribution plate comprises first distribution plate and is centered around the second outer distribution plate of described first distribution plate; Described holding part comprises second holding part that is used to embed first holding part of first distribution plate and is used to embed second distribution plate; Intake channel and edge intake channel in the middle of described intake channel comprises; Described first holding part is communicated with middle intake channel, and described second holding part is communicated with the edge intake channel.
Described first distribution plate is a disc, and described second distribution plate is an annular, and described second distribution plate is centered around outside the circumference of first distribution plate.
Described embedded distribution plate comprises the upper surface relative with described intake channel, has equally distributed distribution circuit in the described upper surface.
Described embedded distribution plate also comprises the side surface that is positioned at around the described upper surface, has equally distributed distribution circuit in the described side surface; Be formed with inner chamber between described upper surface and the side surface, have the gap between described inner chamber and the lower distribution plate.
Have at least one shape groove identical with the shape of embedded distribution plate in the upper surface of described embedded distribution plate, the center of described groove overlaps with the center of intake channel.
Have the identical groove of shape of at least one shape and embedded distribution plate in the upper surface facing surfaces of described holding part and embedded distribution plate, the center of described groove overlaps with the center of intake channel.
In described embedded distribution plate, the distribution circuit size of corresponding less interstitial site is greater than the distribution circuit size of the big interstitial site of correspondence.
Described distribution circuit along the circumferential direction evenly distributes, and its cross sectional shape is circle, quadrangle, triangle or its combination.
Correspondingly, the present invention also provides a kind of apparatus for processing plasma to comprise above-described arbitrary gas distributing device at least.
Compared with prior art, the gas distributing device that technical scheme of the present invention provides has the following advantages: this gas distributing device comprises inlet plate, embedded distribution plate and lower distribution plate, and embedded distribution plate structure is comparatively simple, be convenient to processing, for example described first distribution plate only needs in disk upper surface and side surface processing distribution circuit, in the upper surface machined grooves; Same, second distribution plate only needs in the upper surface machined grooves, therefore to be convenient to processing in annulus upper surface and side surface processing distribution circuit; In addition, for the gap between the holding part on embedded distribution plate and the inlet plate,, can reduce manufacturing cost because self size of holding part and embedded distribution plate is bigger, therefore lower to the requirement of precision.
Technical scheme of the present invention also provides a kind of apparatus for processing plasma, owing to adopt described gas distributing device, therefore simple in structure, can reduce manufacturing cost.
Description of drawings
By the more specifically explanation of the preferred embodiments of the present invention shown in the accompanying drawing, above-mentioned and other purpose, feature and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing in proportion, focus on illustrating purport of the present invention.
Fig. 1 is the disclosed a kind of parallel-plate plasma etching apparatus schematic diagram of prior art;
Fig. 2 is the disclosed a kind of gas distributing device schematic diagram of prior art;
Fig. 3 is the partial enlarged drawing of gas distributing device shown in Figure 2;
Fig. 4 is the disassemblying structure schematic diagram of gas distributing device among the embodiment one;
Fig. 5 be among the embodiment one inlet plate along the cutaway view of A-A direction among Fig. 4;
Fig. 6 be among the embodiment one first distribution plate along the cutaway view of B-B direction among Fig. 4;
Fig. 7 is the perspective view of first distribution plate among the embodiment one;
Fig. 8 be among the embodiment one second distribution plate along the cutaway view of C-C direction among Fig. 4;
Fig. 9 is the perspective view of second distribution plate among the embodiment one;
Figure 10 is the assembling view of gas distributing device among the embodiment one;
Figure 11 is the assembling view of gas distributing device among the embodiment two.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention.Therefore the present invention is not subjected to the restriction of following public embodiment.
Described schematic diagram is an example, and it should not limit the scope of protection of the invention at this.
Embodiment one
Describe the gas distributing device that present embodiment provides in detail below in conjunction with accompanying drawing 4 to Figure 10.
Fig. 4 is the disassemblying structure schematic diagram of described gas distributing device, and this gas distributing device comprises: inlet plate 1, first distribution plate 2, second distribution plate 3 and lower distribution plate 4.
Fig. 5 is the cutaway view of inlet plate 1 along A-A direction among Fig. 4, and inlet plate 1 one side of intake channel dorsad has holding part, and described holding part comprises first holding part 15 and second holding part 16; Described first holding part 15 is communicated with middle intake channel 11, and described second holding part 16 is communicated with edge intake channel 12.
As shown in Figure 4, described embedded distribution plate comprises first distribution plate 2 and second distribution plate 3, and wherein, first distribution plate 2 is a disc, and second distribution plate 3 is an annular, and second distribution plate 3 is centered around outside the circumference of first distribution plate 2.After described embedded distribution plate and inlet plate 1 assembling, first distribution plate 2 embeds in first holding part 15 shown in Figure 5, and second distribution plate 3 embeds in second holding part shown in Figure 5 interior 16, and is corresponding, first holding part 15 be shaped as circle, second holding part 16 be shaped as annular.
Fig. 6 is the cutaway view of first distribution plate 2 along B-B direction among Fig. 4, first distribution plate 2 has upper surface 20 and is positioned at upper surface 20 side surface 29 on every side, form inner chamber 28 between upper surface 20 and the side surface 29, have a large amount of distribution circuit 21 in the upper surface 20, distribution circuit 21 can along the circumferential direction evenly distribute, and also can evenly distribute according to other modes; Distribution circuit 21 distance radially can equate, is preferably spacing and reduces gradually, to increase the fluid ability of edge gas; Have in the side surface 29 in a large number in equally distributed distribution circuit 22, the cross sectional shape of distribution circuit 21 or distribution circuit 22 is circle, quadrangle, triangle or its combination.
Fig. 7 is the perspective view of described first distribution plate, the upper surface 20 of first distribution plate 2 has circular groove 201 and groove 202, overlapping of the center of groove 201 and groove 202, the depth ratio groove 202 of groove 201 is big, and the diameter of groove 201 is littler than groove 202.
Groove has distribution circuit 211 on 201 surfaces, and groove has distribution circuit 212 on 202 surfaces, and the groove as groove 201 and groove 202 can only have one on upper surface 20, also can have more than two.
Fig. 8 is the cutaway view of second distribution plate 3 along C-C direction among Fig. 4, and second distribution plate 3 has upper surface 30 and is positioned at upper surface 30 side surface 39 on every side, forms inner chamber 38 between upper surface 30 and the side surface 39; Have a large amount of distribution circuit 31 in the upper surface 30, distribution circuit 31 along the circumferential direction evenly distributes,, also can evenly distribute according to other modes; Have a large amount of equally distributed distribution circuit 32 in the side surface 39, the cross sectional shape of distribution circuit 31 or distribution circuit 32 is circle, quadrangle, triangle or its combination.
Fig. 9 is the perspective view of described second distribution plate, the upper surface 30 of second distribution plate 3 has the groove 301 of annular, the center of groove 301 in cutaway view overlaps with second center of distribution plate 3 in cutaway view, also is the centre position that the groove 301 of annular is positioned at second distribution plate, 3 Widths of annular.Groove as groove 301 also can have two or more on upper surface 30.
As shown in Figure 4, lower distribution plate 4 is positioned at the below of first distribution plate 2 and second distribution plate 3, have a large amount of equally distributed paths (among the figure not label) on the lower distribution plate 4, after lower distribution plate 4 and inlet plate 1 assembling, first distribution plate 2 and second distribution plate 3 are enclosed in the holding part of inlet plate 1.
Figure 10 is the assembling view of described gas distributing device, and as shown in the figure, inlet plate 1 one side of intake channel dorsad has first holding part 15 that is communicated with middle intake channel 11, and second holding part 16 that is communicated with edge intake channel 12; First distribution plate 2 embeds in first holding part 15, and upper surface 20 is relative with middle intake channel 11, and preferably, the center of middle intake channel 11 overlaps with the center of first distribution plate 2; Have between the upper surface 20 of first distribution plate 2 and first holding part 15 between the side surface 29 of gap 23, the first distribution plates 2 and first holding part 15 and have gap 24; Because the upper surface 20 of first distribution plate 2 has circular groove 201 and the groove 202 that the center overlaps, and the degree of depth of the depth ratio groove 202 of groove 201 is big, then gap 23 reduces at the mind-set edge from first distribution plate 2 gradually.
The material of inlet plate 1, first distribution plate 2, second distribution plate 3 and lower distribution plate 4 is preferably aluminium alloy, and anodized is all carried out on the surface, and the lower surface of lower distribution plate 4 carries out the yttria spraying; The material of first distribution plate 2, second distribution plate 3 and lower distribution plate 4 also can be selected silicon, carborundum (SiC) for use; The material of inlet plate 1 also can be selected other metals such as stainless steel for use.
The operation principle of above-mentioned gas distributor is as follows:
A gas part that enters first distribution plate 2 from middle intake channel 11 enters inner chamber 28 through gap 23, distribution circuit 21, because the existence in gap 23, originally the air-flow of Ji Zhonging is distributed uniformly, flows through distribution circuit 21; Another part gas enters inner chamber 28 through gap 24, distribution circuit 22; Then, the gas stream that enters inner chamber 28 flows out by 41 backs of the distribution circuit on the lower distribution plate 4 through the gap 45 again, thus in the plasma process chamber of lower distribution plate 4 below the uniform distribution of gas of acquisition.
23 air-flows that enter distribution circuit 21 can reduce to the edge from the centre from the gap, but because the existence in gap 24, gas can flow into inner chamber 28 from the distribution circuit 22 of side surface 29, thereby compensation is by the air-flow difference of the distribution circuit 21 at middle on the upper surface 20 and edge.The size of the size in appropriate design gap 23 and gap 24, gas passage 22 and gas passage 21 can make the gas that is entered by intake channel 11 be evenly distributed in the inner chamber 28 of first distribution plate 2.
In addition, gap 23 reduces at the mind-set edge from first distribution plate 2 gradually, also promptly along the direction of gas flow, gap 23 reduces gradually, to increase the therefrom fluid ability at mind-set edge of gas, thereby strengthen the gas flow of the distribution circuit 21 that is positioned at upper surface 20 edges, can further make the air-flow uniform distribution.Because the size of groove 201 lip-deep distribution circuit 211 is less than the size (see figure 7) of groove 202 lip-deep distribution circuit 212, the size of distribution circuit 211 that also is gap 23 larger part correspondences can compensate the air-flow difference that far causes apart from intake channel 11 with respect to intake channel 211 because of distribution circuit 212 greater than the size of the distribution circuit 212 of gap 23 smaller part correspondences.
A gas part that enters second distribution plate 3 from edge intake channel 12 enters inner chamber 38 through gap 33, distribution circuit 31, because the existence in gap 33, originally the air-flow of Ji Zhonging is flow through distribution circuit 31 by uniform distribution; Another part gas enters inner chamber 38 through gap 34, distribution circuit 32, and then, the gas stream that enters inner chamber 38 is through the gap 45, again by the 41 back eluting gas distributors of the distribution circuit on the lower distribution plate 4.
Because the existence in gap 34, gas can flow into inner chamber 38 from the distribution circuit 32 of side surface 39, thereby compensation is by the air-flow difference of the distribution circuit 31 at middle on the upper surface 30 and edge.The size of the size in appropriate design gap 33 and gap 34, gas passage 32 and gas passage 31 can make the gas that is entered by intake channel 12 be evenly distributed in the inner chamber 38 of second distribution plate 3.
In addition, gap 33 reduces to the edge gradually from the centre position of second distribution plate, 3 Widths, also promptly reduce gradually along the direction gap 33 of gas flow, to increase the therefrom fluid ability at mind-set edge of gas, thereby strengthen the gas flow of the distribution circuit 31 that is positioned at upper surface 30 edges, further make the air-flow uniform distribution that flows in the inner chamber 38.
In addition, inner chamber 38 effluent airs from second distribution plate 3, and the gas that goes out from the inner chamber 28 of first distribution plate 2, the gap 45 of all flowing through at last, again by the 41 back eluting gas distributors of the distribution circuit on the lower distribution plate 4, the gas that so will enter gas distributing device is divided into two-way, can distinguish the gas flow of the middle intake channel 11 of independent control and the gas flow of edge intake channel 12, the gas flow that balance is flowed out by in the middle of the lower distribution plate 4 and edge, gas can be evenly distributed in big scope, also can make the air inflow of zone line be greater than or less than the air inflow of fringe region according to process requirements.
Above-described gas distributing device comprises inlet plate, first distribution plate, second distribution plate and lower distribution plate, compare advantage with existing gas distributing device and be that structure is comparatively simple, for example first distribution plate only needs in disk upper surface and side surface processing distribution circuit, in the upper surface machined grooves; Same, second distribution plate only needs in the upper surface machined grooves, therefore to be convenient to processing in annulus upper surface and side surface processing distribution circuit; In addition, for the gap between the holding part on embedded distribution plate and the inlet plate,, can reduce manufacturing cost because self size of holding part and embedded distribution plate is bigger, therefore lower to the requirement of precision.
Above-mentioned embedded distribution plate comprises first distribution plate and second distribution plate, in addition, also a distribution plate can only be arranged, and corresponding intake channel also only has one; Also can comprise plural distribution plate, corresponding intake channel also has more than two.More distribution plate can be divided into gas multichannel independently to be controlled, and more helps in a wider context with the gas uniform distribution.
For adapting to difform substrate, described first distribution plate of present embodiment also can be quadrangle or other shape, and then second distribution plate is other shapes of annular quadrangle or annular accordingly.
In the gas distributing device that above embodiment discloses, groove 201, groove 202 or groove 203 all are arranged in the upper surface (see figure 10) of embedded distribution plate, make gap 23 or gap 33 therefrom reduce gradually at the mind-set edge, in addition, groove can also be arranged in the holding part, specifically describes in following examples.
Embodiment two
Figure 11 is the assembling view of gas distributing device in the present embodiment, and described gas distributing device comprises: inlet plate 1 ', first distribution plate 2 ', second distribution plate 3 ' and the lower distribution plate 4 '; Inlet plate 1 ' is provided with intake channel, intake channel 11 ' and edge intake channel 12 ' in the middle of described intake channel comprises, in the inlet plate 1 ' dorsad the one side of intake channel be provided with holding part, described holding part comprises first holding part 15 ' and second holding part 16 '; First distribution plate 2 ' embeds in first holding part 15 ', second distribution plate 3 ' embeds in second holding part 16 ', first distribution plate 2 ' has upper surface 20 ' and is positioned at upper surface 20 ' side surface 29 ' on every side, forms inner chamber 28 ' between upper surface 20 ' and the side surface 29 '; Second distribution plate 3 ' has upper surface 30 ' and is positioned at upper surface 30 ' side surface 39 ' on every side, forms inner chamber 38 ' between upper surface 30 ' and the side surface 39 '; Lower distribution plate 4 ' is connected with the bottom of inlet plate 1 ', and first distribution plate 2 ' and second distribution plate 3 ' are encapsulated in the holding part.
Only be with the difference of embodiment one: do not have groove in the upper surface 30 ' of the upper surface 20 ' of first distribution plate 2 ' and/or second distribution plate 3 ', and the upper surface 20 ' facing surfaces 60 of first holding part 15 ' and first distribution plate 2 ' is provided with groove 601 and groove 602, the overlapping and overlapping of the center of groove 601 and groove 602 with the center of middle intake channel 11 ', the depth ratio groove 602 of groove 601 is big, and the diameter of groove 601 is littler than groove 602, thereby the gap 23 ' between the upper surface 20 ' and first holding part 15 ' is therefrom reduced at the mind-set edge gradually.Similarly, upper surface 30 ' the facing surfaces 70 of second holding part 16 ' and second distribution plate 3 ' is provided with groove 701, the center of groove 701 overlaps with edge intake channel 12 ', thereby the gap 33 ' between the upper surface 30 ' and second holding part 16 ' is therefrom reduced at the mind-set edge gradually.
Other structures and the embodiment one of the described gas distributing device of present embodiment are similar, do not repeat them here.In addition; the structure that other can make the gap between holding part and the embedded distribution plate reduce gradually to the edge from the centre; for example; in described holding part and embedded distribution plate facing surfaces, be equipped with groove; again for example; described holding part and/or embedded distribution plate facing surfaces are made as the slope that is raise to the edge by the centre, and above structure also can realize purpose of the present invention, equally within protection range of the presently claimed invention.
Technical scheme of the present invention also provides a kind of apparatus for processing plasma, and described apparatus for processing plasma comprises the described gas distributing device of above arbitrary embodiment at least.
Need to prove, the above gas distributing device can be applied in the plasma treatment facilities such as plasma etching, thin film deposition, those skilled in that art should know, the gas distributing device that technical solution of the present invention provides also can be applied to other need carry out in the equipment of large tracts of land uniform distribution gas, for example the manufacturing installation of solar panel.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.Though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention.Any those of ordinary skill in the art, do not breaking away under the technical solution of the present invention scope situation, all can utilize the method and the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention, all still belongs in the scope of technical solution of the present invention protection any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (9)
1. a gas distributing device is characterized in that, comprising: inlet plate, embedded distribution plate and lower distribution plate; Wherein, the holding part that described inlet plate is provided with intake channel and is communicated with intake channel, described embedded distribution plate embeds in the holding part; Lower distribution plate be positioned at inlet plate below, embedded distribution plate is encapsulated in the described holding part;
Described embedded distribution plate comprises the upper surface relative with described intake channel, has equally distributed distribution circuit in the described upper surface; Described embedded distribution plate also comprises the side surface that is positioned at around the described upper surface, has equally distributed distribution circuit in the described side surface; Be formed with inner chamber between described upper surface and the side surface, have the gap between described inner chamber and the lower distribution plate; All has the gap between described upper surface and side surface and the holding part.
2. gas distributing device according to claim 1 is characterized in that, the described upper surface of embedded distribution plate and the gap between the holding part reduce gradually along the direction that gas flows in this gap.
3. gas distributing device according to claim 1 and 2 is characterized in that, described embedded distribution plate comprises first distribution plate and is centered around the second outer distribution plate of described first distribution plate; Described holding part comprises second holding part that is used to embed first holding part of first distribution plate and is used to embed second distribution plate; Intake channel and edge intake channel in the middle of described intake channel comprises; Described first holding part is communicated with middle intake channel, and described second holding part is communicated with the edge intake channel.
4. gas distributing device according to claim 3 is characterized in that, described first distribution plate is a disc, and described second distribution plate is an annular, and described second distribution plate is centered around outside the circumference of first distribution plate.
5. gas distributing device according to claim 1 is characterized in that, has at least one shape groove identical with the shape of embedded distribution plate in the upper surface of described embedded distribution plate, and the center of described groove overlaps with the center of intake channel.
6. gas distributing device according to claim 1, it is characterized in that, have the identical groove of shape of at least one shape and embedded distribution plate in the upper surface facing surfaces of described holding part and embedded distribution plate, the center of described groove overlaps with the center of intake channel.
7. gas distributing device according to claim 1 and 2, it is characterized in that, in described embedded distribution plate, the distribution circuit size of the less interstitial site between the described upper surface of corresponding embedded distribution plate and the holding part is greater than the described upper surface of corresponding embedded distribution plate and the distribution circuit size of the big interstitial site between the holding part.
8. gas distributing device according to claim 1 and 2 is characterized in that, described distribution circuit along the circumferential direction evenly distributes, and its cross sectional shape is circle, quadrangle, triangle or its combination.
9. an apparatus for processing plasma is characterized in that, comprises at least as each described gas distributing device of claim 1 to 8.
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| CN2008101167961A CN101315880B (en) | 2008-07-17 | 2008-07-17 | Gas distribution device and plasma processing apparatus adopting the same |
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| CN2008101167961A CN101315880B (en) | 2008-07-17 | 2008-07-17 | Gas distribution device and plasma processing apparatus adopting the same |
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| CN101315880B true CN101315880B (en) | 2010-06-02 |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102776489B (en) * | 2011-05-09 | 2014-08-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas inlet ring, gas inlet assembly, process chamber apparatus and CVD equipment |
| CN103031543B (en) * | 2011-09-30 | 2014-12-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Top electrode and plasma processing equipment using top electrode |
| CN102586739A (en) * | 2012-03-14 | 2012-07-18 | 无锡康力电子有限公司 | Gas-distributing system for vacuum coating |
| CN103377867A (en) * | 2012-04-14 | 2013-10-30 | 靖江先锋半导体科技有限公司 | Top electrode in etching electrode mechanism |
| CN108728820B (en) * | 2017-04-19 | 2020-06-19 | 北京北方华创微电子装备有限公司 | Gas mixing structure, process chamber and semiconductor processing equipment |
| CN109402609B (en) * | 2018-12-21 | 2024-04-12 | 成都中科卓尔智能科技集团有限公司 | Gas shower device |
| CN112012898B (en) * | 2020-08-12 | 2021-08-10 | 北京控制工程研究所 | External distributor anode integrated structure of passageway for low-power Hall thruster |
| CN114990528B (en) * | 2022-05-16 | 2023-11-03 | 武汉理工大学 | Device and method for improving temperature field in cavity of CVD equipment |
| CN117672795A (en) * | 2022-08-31 | 2024-03-08 | 江苏鲁汶仪器股份有限公司 | Plasma flow control device, plasma etching machine and uniformity optimization method thereof |
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Address after: No. 8, Wenchang Avenue, Beijing economic and Technological Development Zone, 100176 Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 Jiuxianqiao East Road, Chaoyang District, Chaoyang District, Beijing Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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