CN103377867A - Top electrode in etching electrode mechanism - Google Patents
Top electrode in etching electrode mechanism Download PDFInfo
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- CN103377867A CN103377867A CN2012101084062A CN201210108406A CN103377867A CN 103377867 A CN103377867 A CN 103377867A CN 2012101084062 A CN2012101084062 A CN 2012101084062A CN 201210108406 A CN201210108406 A CN 201210108406A CN 103377867 A CN103377867 A CN 103377867A
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- electrode
- top electrode
- etching
- gas
- round platform
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Abstract
Provided is a top electrode in an etching electrode mechanism, comprising gas spray holes (1) and installing holes (3); the top electrode is configured to be a circular platform (5) which is provided with grooves (2) for assisting gas distribution according to rules; the grooves (2) are provided with the gas spray holes (1) at intervals. The etching electrode mechanism has a simple structure, is convenient to operate and can distribute and seal plasma working gas; one surface in contact with an electric field possesses insulation and corrosion resistance characteristics and the other surface possesses conductivity and can be used for connecting with 1000 V positive electricity; the top electrode raises processing quality and work efficiency and reduces production cost.
Description
Technical field:
The present invention relates to a kind of semiconductor medium etching machine, relate in particular to the top electrode in the etching electrode machine.
Background technology:
The dielectric etch machine is the key equipment of semiconductor chip processing, and realize in the dielectric etch machine wafer etching sesame can be the electrode structure that upper and lower two electrodes form.Wherein top electrode connects the positive electricity about 1000V, realize distribution and the control function of article on plasma etching gas, bottom electrode is connected with the earth, neutral, the molecule that is in the gas is wherein carried out high speed bombardment through acceleration to the wafer that is placed on the bottom electrode by formation high voltage electric field between upper and lower two electrodes, thereby produces corrasion.In order to realize described operation principle, requiring top electrode to have the article on plasma working gas has distribution function, self structure to have sealing function in when assembling, has the insulation characterisitic another side with the one side of electric field contact and have electric conductivity for being connected 1000V positive electricity.
Summary of the invention:
The purpose of this invention is to provide and a kind ofly have article on plasma working gas distribution function, have sealing function, have insulation characterisitic, corrosion resistance another side with the one side of electric field contact and have the top electrode that electric conductivity is used for being connected the etching electrode machine of 1000V positive electricity.
The object of the present invention is achieved like this, top electrode in a kind of etching electrode mechanism comprises gas spray orifice, installing hole, and it is characterized in that: top electrode is arranged to round platform, round platform is provided with the groove that assist gas distributes by rule, and the groove equal intervals is provided with the gas spray orifice.
Round platform of the present invention is gone to the bottom and is provided with high flatness and high surface finish.
The present invention is simple in structure, easy to operate, have the article on plasma working gas distribution function, have sealing function, have insulation characterisitic with the one side of electric field contact, the corrosion resistance another side has electric conductivity and is used for being connected 1000V positive electricity, improve crudy and operating efficiency, reduced production cost.
Description of drawings:
Fig. 1 is structural representation of the present invention.
Fig. 2 is A-A cutaway view among Fig. 1.
Among the figure 1, the gas spray orifice, 2, gas distributes groove, 3, installing hole, 4, round platform goes to the bottom, 5, round platform.
Embodiment:
The invention will be further described below in conjunction with accompanying drawing:
With reference to accompanying drawing, the top electrode in a kind of etching electrode mechanism comprises gas spray orifice 1, installing hole 3, and it is characterized in that: top electrode is arranged to round platform 5, and round platform 5 is provided with the groove 2 that assist gas distributes by rule, and groove 2 equal intervals are provided with gas spray orifice 1.Described round platform 5 is gone to the bottom and 4 is provided with high flatness and high surface finish.During implementation, it 4 is the cooperation planes that seal that round platform is gone to the bottom, the control working gas all flows out in the aperture of the utmost points from power on and does not reveal from other passage, and round platform is gone to the bottom and 4 is connected the compacted sealing effectiveness that reaches of sealing ring by the sealing ring on installing hole 3 and the adjacent component; The round platform that connects 1000V positive electricity except needs in the whole upper electrode arrangement is gone to the bottom 4, and remaining surface is all carried out hard anodize, satisfies operational environment has insulating properties, corrosion resistance to top electrode requirement.
Claims (2)
1. the top electrode in the etching electrode mechanism, comprise gas spray orifice (1), installing hole (3), it is characterized in that: top electrode is arranged to round platform (5), and round platform (5) is provided with the groove (2) that assist gas distributes by rule, and groove (2) equal intervals is provided with gas spray orifice (1).
2. the top electrode in the etching electrode mechanism according to claim 1 is characterized in that: described round platform (5) go to the bottom (4) be provided with high flatness and high surface finish.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101084062A CN103377867A (en) | 2012-04-14 | 2012-04-14 | Top electrode in etching electrode mechanism |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101084062A CN103377867A (en) | 2012-04-14 | 2012-04-14 | Top electrode in etching electrode mechanism |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103377867A true CN103377867A (en) | 2013-10-30 |
Family
ID=49462823
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101084062A Pending CN103377867A (en) | 2012-04-14 | 2012-04-14 | Top electrode in etching electrode mechanism |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103377867A (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040035532A1 (en) * | 2002-08-23 | 2004-02-26 | Soon-Jong Jung | Etching apparatus for use in manufacturing a semiconductor device and shield ring for upper electrode thereof |
| CN1682342A (en) * | 2002-09-30 | 2005-10-12 | 东京毅力科创株式会社 | Upper electrode plate with deposition shield in a plasma processing system |
| CN2774712Y (en) * | 2005-01-27 | 2006-04-26 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Static chuck device |
| CN101296553A (en) * | 2008-06-25 | 2008-10-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing apparatus |
| CN101315880A (en) * | 2008-07-17 | 2008-12-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas distribution device and plasma processing apparatus adopting the same |
| CN101339895A (en) * | 2008-08-22 | 2009-01-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas distribution device and plasma processing apparatus applying the same |
| CN101556904A (en) * | 2008-04-10 | 2009-10-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas distributor and semiconductor processing equipment applying same |
| CN201898113U (en) * | 2009-04-07 | 2011-07-13 | 朗姆研究公司 | Spray header electrode with centralized positioning characteristic and spray header electrode assembly |
| CN202816865U (en) * | 2012-04-14 | 2013-03-20 | 靖江先锋半导体科技有限公司 | A top electrode in an etching electrode mechanism |
-
2012
- 2012-04-14 CN CN2012101084062A patent/CN103377867A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040035532A1 (en) * | 2002-08-23 | 2004-02-26 | Soon-Jong Jung | Etching apparatus for use in manufacturing a semiconductor device and shield ring for upper electrode thereof |
| CN1682342A (en) * | 2002-09-30 | 2005-10-12 | 东京毅力科创株式会社 | Upper electrode plate with deposition shield in a plasma processing system |
| CN2774712Y (en) * | 2005-01-27 | 2006-04-26 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Static chuck device |
| CN101556904A (en) * | 2008-04-10 | 2009-10-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas distributor and semiconductor processing equipment applying same |
| CN101296553A (en) * | 2008-06-25 | 2008-10-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing apparatus |
| CN101315880A (en) * | 2008-07-17 | 2008-12-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas distribution device and plasma processing apparatus adopting the same |
| CN101339895A (en) * | 2008-08-22 | 2009-01-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas distribution device and plasma processing apparatus applying the same |
| CN201898113U (en) * | 2009-04-07 | 2011-07-13 | 朗姆研究公司 | Spray header electrode with centralized positioning characteristic and spray header electrode assembly |
| CN202816865U (en) * | 2012-04-14 | 2013-03-20 | 靖江先锋半导体科技有限公司 | A top electrode in an etching electrode mechanism |
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20131030 |