CN103031543B - Top electrode and plasma processing equipment using top electrode - Google Patents
Top electrode and plasma processing equipment using top electrode Download PDFInfo
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- CN103031543B CN103031543B CN201110303332.3A CN201110303332A CN103031543B CN 103031543 B CN103031543 B CN 103031543B CN 201110303332 A CN201110303332 A CN 201110303332A CN 103031543 B CN103031543 B CN 103031543B
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Abstract
The invention provides a top electrode and a piece of plasma processing equipment using the top electrode. The top electrode comprises a top pole plate, a bottom pole plate which is opposite to the top pole plate and a connecting plate; the top pole plate, the bottom pole plate and the connecting plate form a cavity; air holes which run through the bottom pole plate are formed in the bottom pole plate, wherein a conductor ring is arranged between the top pole plate and the bottom pole plate; the cavity is divided into a plurality of circular sub-cavities which are distributed in a radial direction by the conductor ring; radial through holes which are communicated with each of the circular sub-cavities are formed in the conductor ring; and one or more air inlet passages are arranged in the corresponding position of the top pole plate and each of the circular sub-cavities. The top electrode not only can improve the distribution uniformity of process gas in a reaction chamber, but also can improve the distribution uniformity of energy which is fed in the reaction chamber by a radio-frequency power supply, so that the processing uniformity of the plasma processing equipment is improved.
Description
Technical field
The present invention relates to microelectronics technology, be specifically related to a kind of top electrode and apply the plasma processing device of this top electrode.
Background technology
Plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, hereinafter referred to as PECVD) technology is a kind of method being widely used in low temperature depositing high-quality film.In current industrial production, the preparation of large area amorphous silicon-film solar-cell mainly adopts extensive parallel plate electrode PECVD device.
Fig. 1 is conventional extensive parallel plate electrode PECVD device.Refer to Fig. 1, this equipment comprises reaction chamber 1, the top electrode 13 be connected with radio-frequency power supply 2 is provided with in the upper position of reaction chamber 1 inside, top electrode 13 is cavity structure, at the top crown of top electrode 13, paracentral position is provided with induction trunk 12, its bottom crown is provided with multiple pore (not shown).In the bottom of reaction chamber 1 and the position relative with top electrode 13 is provided with lower electrode 14.In technological process, first process gas enters in the cavity 11 of top electrode 13 by induction trunk 12, then enters reaction chamber 1 through pore.Radio-frequency power supply 2 provides energy by top electrode 13 to reaction chamber 1 inside, namely, radio-frequency power supply 2 produces rf electric field between top electrode 13 and lower electrode 14, by rf electric field, process gas is excited formation plasma body, then plated film is carried out to workpieces to be machined such as the wafers be positioned on bottom crown 14.
In actual production process, because the structure of top electrode 13 is larger, and the induction trunk 12 of process gas only by being arranged on top electrode 13 central position enters in cavity 11, therefore to be diffused into time of cavity 11 edge section longer for process gas, cause the skewness of process gas in cavity 11, this must make the skewness of process gas in processing chamber 1, thus have impact on the processing uniformity of PECVD device.In addition, due to standing wave effect, above-mentioned top electrode 13 easily causes the energy distribution of radio-frequency power supply 2 feed-in reaction chamber uneven, thus affects the homogeneity of electric field distribution between top electrode 13 and lower electrode 14, and then causes the uneven of thin film deposition.
Summary of the invention
For solving above-mentioned the deficiencies in the prior art, the invention provides a kind of top electrode and apply the plasma processing device of this top electrode, it can not only improve the distributing homogeneity of the process gas in reaction chamber, and the energy distribution of laser of radio-frequency power supply feed-in reaction chamber can be improved, thus improve the processing uniformity of plasma processing device.
A kind of top electrode is provided for realizing object of the present invention, comprise top crown, the bottom crown relative with described top crown and web plate, described top crown, bottom crown and web plate form cavity, described bottom crown is provided with the pore running through its thickness, wherein, conductor loops is provided with between described top crown and bottom crown, described conductor loops is connected with top crown and bottom crown respectively, and described cavity is divided into the multiple annular sub-chamber of radially directional spreding, conductor loops there is the radial direction through hole being communicated with each annular sub-chamber, and the position corresponding with each described annular sub-chamber is provided with one or more induction trunk on described top crown.
Preferably, described conductor loops and described top crown or bottom crown are structure as a whole, and namely described conductor loops is be arranged on the protuberance on described top crown or bottom crown.
Wherein, between described top crown and bottom crown, be provided with multiple described conductor loops, and the medullary ray of described multiple conductor loops overlaps with the medullary ray of described cavity.
Wherein, described conductor loops top electrode projection in the plane shape and described web plate top electrode the shape of projection in the plane similar.
Wherein, described web plate top electrode the shape of projection be in the plane annular, accordingly, described conductor loops top electrode the profile of projection be in the plane annular.
Wherein, the diameter of described top crown is 380 ~ 420mm, and the distance between described top crown and bottom crown is 18 ~ 22mm, is provided with a described conductor loops in described cavity, and the outside dimension of described conductor loops is 28 ~ 32mm, and its internal diameter size is 20 ~ 24mm.
Wherein, the diameter of described top crown is 480 ~ 520mm, and the distance between described top crown and bottom crown is 8 ~ 12mm, is provided with a described conductor loops in described cavity, and the outside dimension of described conductor loops is 140 ~ 160mm, its internal diameter size is 132 ~ 152mm.
Wherein, the diameter of described top crown is 580 ~ 620mm, and the distance between described top crown and bottom crown is 22 ~ 26mm, is provided with a described conductor loops in described cavity, and the external diameter of described conductor loops is for being of a size of 180 ~ 200mm, its internal diameter size is 172 ~ 192mm.
Wherein, described web plate top electrode the shape of projection be in the plane polygonal annular, accordingly, described conductor loops top electrode the shape of projection be in the plane polygonal annular.
Wherein, described web plate top electrode the shape of projection be in the plane four directions annular, accordingly, described conductor loops be cubic annular in the shape of top electrode institute projection in the plane.
Wherein, described conductor loops adopts aluminium, copper or aluminium alloy to be made.
The present invention also provides a kind of plasma processing device, it comprises reaction chamber, the upper position of described reaction chamber inside is provided with top electrode, in the bottom of described reaction chamber and the position relative with top electrode is provided with lower electrode, described top electrode have employed described top electrode provided by the invention.
The present invention has following beneficial effect:
Top electrode provided by the invention, it is by the conductor loops be arranged between top crown and bottom crown, cavity in top electrode is divided into the multiple annular sub-chamber of radially directional spreding, conductor loops there is the radial direction through hole being communicated with each annular sub-chamber, and by being arranged on the one or more induction trunks with each annular sub-chamber corresponding position on top crown, gas is made to enter in corresponding annular sub-chamber respectively by above-mentioned one or more induction trunk, and flowing is tending towards even between annular sub-chamber, thus make gas distribution of regional in cavity be tending towards balanced, to improve the distributing homogeneity of gas in processing chamber, thus improve the processing uniformity of plasma processing device.And, by the connection of above-mentioned conductor loops between top crown and bottom crown, radio-frequency power supply is disperseed to bottom crown comparatively equably from the energy of top crown feed-in, thus improve the distributing homogeneity of feed in energy analysis in top electrode, and then improve the homogeneity of electric field distribution between top electrode and lower electrode, improve the homogeneity of thin film deposition.
Plasma processing device provided by the invention, it adopts top electrode provided by the invention, improves the homogeneity of process gas in processing chamber, thus improves the processing uniformity of plasma processing device.And, by the connection of above-mentioned conductor loops between top crown and bottom crown, enable radio-frequency power supply from the energy of top crown feed-in comparatively equably to bottom crown dispersion, thus make the even of electric field distribution between top electrode and lower electrode, and then improve the homogeneity of thin film deposition.
Accompanying drawing explanation
Fig. 1 is conventional extensive parallel plate electrode PECVD device;
Fig. 2 a is top electrode elevation cross-sectional view provided by the invention;
Fig. 2 b is top electrode top plan view provided by the invention;
The top electrode of Fig. 3 a to be diameter be 400mm arranges the curve comparison figure of the electric field distribution homogeneity before and after conductor loops;
The top electrode of Fig. 3 b to be diameter be 500mm arranges the curve comparison figure of the electric field distribution homogeneity before and after conductor loops;
The top electrode of Fig. 3 c to be diameter be 600mm arranges the curve comparison figure of the electric field distribution homogeneity before and after conductor loops; And
Fig. 4 is the top plan view of square top electrode provided by the invention.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, top electrode provided by the invention and plasma processing device are illustrated in detail.
Fig. 2 a is top electrode elevation cross-sectional view provided by the invention.Fig. 2 b is top electrode top plan view provided by the invention.See also Fig. 2 a and Fig. 2 b, the top electrode that the present embodiment provides, comprise top crown 30, bottom crown 33 and web plate 35, wherein, top crown 30 and bottom crown 33 are oppositely arranged, and its shape projected in the plane of top electrode place is for circular; Web plate 35 is arranged between top crown 30 and the bottom crown 33 and marginal position place of close top crown 30 and bottom crown 33, in order to connect top crown 30 and bottom crown 33.Top crown 30, bottom crown 33 and web plate 35 form a cavity.The shape that web plate 35 projects in the plane of top electrode place is annular.Top crown 30 is provided with the induction trunk 31 passing into gas in cavity, bottom crown 30 is provided with the pore 34 running through its thickness, pore 34 is evenly distributed on bottom crown 30, and the gas in cavity sprays from pore 34.
In cavity, be provided with a conductor loops 40 between top crown 30 and bottom crown 33, it adopts the conductor materials such as aluminium, copper or aluminium alloy to be made.Conductor loops 40 top electrode projection in the plane shape and web plate 35 top electrode the shape of projection in the plane similar, namely conductor loops 40 top electrode the shape of projection be in the plane annular, and the medullary ray of conductor loops 40 overlaps with the medullary ray of cavity.And, conductor loops 40 is connected with top crown 30 and bottom crown 33 respectively, can enable to disperse to bottom crown 33 more equably from the feed in energy analysis of top crown 30 feed-in on the one hand, thus feed in energy analysis can be made to be uniformly distributed in top electrode, and then the homogeneity of electric field distribution between top electrode and lower electrode can be improved, improve the homogeneity of thin film deposition.On the other hand, cavity is divided into the first annular sub-chamber 5 and the second annular sub-chamber 6 of radially directional spreding by conductor loops 40, and keeps connecting by the radial direction through hole 41 in conductor loops between each annular sub-chamber.On top crown 30, position corresponding to sub-chamber 5 annular with first and the second annular sub-chamber 6 is provided with multiple induction trunk 31 respectively, and gas is entered in the first annular sub-chamber 5 and the second annular sub-chamber 6 respectively by multiple induction trunk 31.Because gas enters the first annular sub-chamber 5 (cavity center region) and the second annular sub-chamber 6 (cavity edge region) by different induction trunks 31, this is conducive to controlling entering into the gas of regional in cavity, the distribution of the regional of gas in cavity is made to be tending towards even, thus improving the distributing homogeneity of gas in cavity, this makes again gas to spray from the pore 34 be arranged on bottom crown 33 equably.
It should be noted that, in the present embodiment, a conductor loops 40 is provided with between top crown 30 and bottom crown 33, but in actual applications, also can multiple conductor loops 40 be set between top crown 30 and bottom crown 33, and multiple medullary ray of conductor loops 40 overlaps with the medullary ray of cavity, thus cavity is separated into more annular sub-chamber.
Also it should be noted that, in the present embodiment, conductor loops 40 be respectively with top crown 30 and the separate Split type structure of bottom crown 33, but be not limited thereto in actual applications, conductor loops 40 can also be the integrative-structure be connected as a single entity with top crown 30 or bottom crown 33, namely on top crown 30 or bottom crown 33, the protuberance connected as one with it is provided with, and be connected with bottom crown 33 or top crown 30 by protuberance, by protuberance, the cavity between top crown 30 and bottom crown 33 is divided into multiple annular sub-chamber, this can realize object of the present invention equally.In addition, integrative-structure protuberance can not only make conductor loops 40 more firm with the connection of top electrode, thus improves the stability of upper electrode arrangement, and can reduce the manufacturing procedure of top electrode, improves the efficiency of processing top electrode.
Also it should be noted that, in the present embodiment, web plate 35 top electrode the shape of projection be in the plane annular, corresponding, the shape that conductor loops 40 projects in the plane of top electrode place is annular.In actual applications, web plate 35 top electrode the shape of projection in the plane corresponding with the shape of the projection of top electrode in its plane, and the shape that conductor loops 40 projects in the plane of top electrode place and web plate 35 top electrode the shape of projection in the plane corresponding.Such as, if top electrode its shape of projection be in the plane other shape such as oval ring, polygonal annular time, the shape that web plate 35 and conductor loops 40 project in the plane of top electrode place is also oval ring, polygonal annular accordingly.In fact, the shape that projects in the plane of top electrode place of conductor loops 40 only need with web plate 35 top electrode the shape of projection in the plane same or similar.
Such as, Fig. 4 is the top plan view of square top electrode provided by the invention.As shown in Figure 4, the shape that web plate 7 projects in the plane of top electrode place is square, corresponding, the shape that conductor loops 8 projects in the plane of top electrode place is four directions annular.Preferably, four ring walls of conductor loops 8 are parallel to four ring walls of corresponding web plate 7.
In addition, the quantity of conductor loops 40, size, ring spacing from etc. parameter be the important parameter of the homogeneity determining electric field distribution between upper and lower electrode, need to determine according to the size of top electrode.The present embodiment provides the parameter of three groups of conductor loops 40, and contrasts respectively the homogeneity of the electric field distribution between the upper and lower battery lead plate before and after three groups of conductor loops.Specific as follows:
First group of conductor loops parameter
The shape projected in its place plane when top electrode is circle, and the diameter of top crown is when being 380 ~ 420mm, the distance between top crown and bottom crown is 18 ~ 22mm, is provided with a conductor loops in cavity, and the outside dimension of conductor loops is 28 ~ 32mm, its internal diameter size is 20 ~ 24mm.
The top electrode of Fig. 3 a to be diameter be 400mm arranges the curve comparison figure of the electric field distribution homogeneity before and after conductor loops.In fig. 3 a, X-coordinate is the excitation frequency (unit is MHz) of radio-frequency power supply upwards electrode feed-in; Ordinate zou is the ununiformity coefficient of electric field distribution between upper and lower electrode.The ununiformity of electric field distribution between the node upper and lower electrode that to be the first curve of hollow circle be arrange conductor loops in cavity before on curve; The ununiformity of electric field distribution between the node upper and lower electrode that to be the second curve of star be arrange conductor loops in cavity after on curve.As can be seen from Fig. 3 a, in the scope that excitation frequency is 13.6 ~ 100.0MHz, between the upper and lower electrode of the first curve, the scope of the ununiformity coefficient of electric field distribution is 0.045 ~ 0.055, and between the upper and lower electrode of the second curve, the scope of the ununiformity coefficient of electric field distribution is 0.022 ~ 0.032.It can thus be appreciated that, point on second curve is all positioned at the below of the point on the first identical curve of corresponding excitation frequency with it, namely, when excitation frequency is identical, the ununiformity arranging electric field distribution between the upper and lower electrode after conductor loops in cavity has had obvious reduction.
Second group of conductor loops parameter
The shape projected in its place plane when top electrode is circle, and the diameter of top crown is when being 480 ~ 520mm, distance between top crown and bottom crown is 8 ~ 12mm, a conductor loops is provided with in cavity, and the outside dimension of conductor loops is 140 ~ 160mm, its internal diameter size is 132 ~ 152mm.
The top electrode of Fig. 3 b to be diameter be 500mm arranges the curve comparison figure of the electric field distribution homogeneity before and after conductor loops.In fig 3b, the horizontal stroke of curve, ordinate zou and the first curve are identical with Fig. 3 a with the implication that the second Curves represents, do not repeat them here.As can be seen from Fig. 3 b, in the scope that excitation frequency is 13.6 ~ 100.0MHz, between the upper and lower electrode of the first curve, the scope of the ununiformity coefficient of electric field distribution is 0.018 ~ 0.035, and between the upper and lower electrode of the second curve, the scope of the ununiformity coefficient of electric field distribution is 0.011 ~ 0.032.It can thus be appreciated that, point on second curve is all positioned at the below of the point on the first identical curve of corresponding excitation frequency with it, namely, when excitation frequency is identical, the ununiformity arranging electric field distribution between the upper and lower electrode after conductor loops in cavity has had obvious reduction.
3rd group of conductor loops parameter
The shape projected in its place plane when top electrode is circle, and the diameter of top crown is when being 580 ~ 620mm, distance between top crown and bottom crown is 22 ~ 26mm, a conductor loops is provided with in cavity, and the external diameter of conductor loops is for being of a size of 180 ~ 200mm, its internal diameter size is 172 ~ 192mm.
The top electrode of Fig. 3 c to be diameter be 600mm arranges the curve comparison figure of the electric field distribution homogeneity before and after conductor loops.In figure 3 c, the horizontal stroke of curve, ordinate zou and the first curve are identical with Fig. 3 a with the implication that the second Curves represents, do not repeat them here.As can be seen from Fig. 3 c, in the scope that excitation frequency is 13.6 ~ 100.0MHz, between the upper and lower electrode of the first curve, the scope of the ununiformity coefficient of electric field distribution is 0.068 ~ 0.105, and between the upper and lower electrode of the second curve, the scope of the ununiformity coefficient of electric field distribution is 0.0028 ~ 0.058.It can thus be appreciated that, point on second curve is all positioned at the below of the point on the first identical curve of corresponding excitation frequency with it, namely, when excitation frequency is identical, the ununiformity arranging electric field distribution between the upper and lower electrode after conductor loops in cavity has had obvious reduction.
In sum, the top electrode that the present embodiment provides, it is by the conductor loops be arranged between top crown and bottom crown, cavity in top electrode is divided into the multiple annular sub-chamber of radially directional spreding, conductor loops there is the radial direction through hole being communicated with each annular sub-chamber, and by being arranged on the one or more induction trunks with each annular sub-chamber corresponding position on top crown, gas distribution of regional in cavity is made to be tending towards balanced, which increase the distributing homogeneity of gas in processing chamber, thus improve the processing uniformity of plasma processing device.And, by the connection of above-mentioned conductor loops between top crown and bottom crown, improve the distributing homogeneity of feed in energy analysis in top electrode, thus improve the homogeneity of electric field distribution between top electrode and lower electrode, and then improve the homogeneity of thin film deposition.
The present embodiment additionally provides a kind of plasma processing device, comprise reaction chamber, the upper position of reaction chamber inside is provided with top electrode, in the bottom of reaction chamber and the position relative with top electrode is provided with lower electrode, top electrode is connected with radio-frequency power supply, for producing rf electric field between the upper and lower electrodes, form plasma body to excite process gas, thus plated film is carried out to workpieces to be machined such as the wafers be positioned on bottom crown.In the present embodiment, the top electrode that top electrode adopts above-described embodiment to provide.
The plasma processing device that the present embodiment provides, owing to have employed the top electrode that above-described embodiment provides, not only can improve gas homogeneity in processing chamber, thus can improve the processing uniformity of plasma processing device; And, the even of electric field distribution between top electrode and lower electrode can be made, thus the homogeneity of thin film deposition can be improved.
Be understandable that, the illustrative embodiments that above embodiment is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (12)
1. a top electrode, comprise top crown, the bottom crown relative with described top crown and web plate, described top crown, bottom crown and web plate form cavity, described bottom crown is provided with the pore running through its thickness, it is characterized in that, conductor loops is provided with between described top crown and bottom crown, described conductor loops is connected with top crown and bottom crown respectively, and described cavity is divided into the multiple annular sub-chamber of radially directional spreding, conductor loops there is the radial direction through hole being communicated with each annular sub-chamber, and the position corresponding with each described annular sub-chamber is provided with one or more induction trunk on described top crown.
2. top electrode according to claim 1, is characterized in that, described conductor loops and described top crown or bottom crown are structure as a whole, and namely described conductor loops is be arranged on the protuberance on described top crown or bottom crown.
3. top electrode according to claim 1, is characterized in that, is provided with multiple described conductor loops between described top crown and bottom crown, and the medullary ray of described multiple conductor loops overlaps with the medullary ray of described cavity.
4. top electrode according to claim 1, is characterized in that, described conductor loops top electrode projection in the plane shape and described web plate top electrode the shape of projection in the plane similar.
5. top electrode according to claim 4, is characterized in that, described web plate top electrode the shape of projection be in the plane annular, accordingly, described conductor loops top electrode the profile of projection be in the plane annular.
6. top electrode according to claim 5, it is characterized in that, the diameter of described top crown is 380 ~ 420mm, distance between described top crown and bottom crown is 18 ~ 22mm, a described conductor loops is provided with in described cavity, and the outside dimension of described conductor loops is 28 ~ 32mm, its internal diameter size is 20 ~ 24mm.
7. top electrode according to claim 5, it is characterized in that, the diameter of described top crown is 480 ~ 520mm, distance between described top crown and bottom crown is 8 ~ 12mm, a described conductor loops is provided with in described cavity, and the outside dimension of described conductor loops is 140 ~ 160mm, its internal diameter size is 132 ~ 152mm.
8. top electrode according to claim 5, it is characterized in that, the diameter of described top crown is 580 ~ 620mm, distance between described top crown and bottom crown is 22 ~ 26mm, a described conductor loops is provided with in described cavity, and the external diameter of described conductor loops is for being of a size of 180 ~ 200mm, its internal diameter size is 172 ~ 192mm.
9. top electrode according to claim 4, is characterized in that, described web plate top electrode the shape of projection be in the plane polygonal annular, accordingly, described conductor loops top electrode the shape of projection be in the plane polygonal annular.
10. top electrode according to claim 9, is characterized in that, described web plate top electrode the shape of projection be in the plane four directions annular, accordingly, described conductor loops be cubic annular in the shape of top electrode institute projection in the plane.
11. top electrodes according to claim 1, is characterized in that, described conductor loops adopts aluminium, copper or aluminium alloy to be made.
12. 1 kinds of plasma processing devices, it comprises reaction chamber, the upper position of described reaction chamber inside is provided with top electrode, in the bottom of described reaction chamber and the position relative with top electrode is provided with lower electrode, it is characterized in that, described top electrode adopts the top electrode in claim 1-11 described in any one.
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| CN109817505B (en) * | 2017-11-20 | 2021-09-24 | 长鑫存储技术有限公司 | Plasma supply device and wafer etching device |
| CN112575319A (en) * | 2021-01-21 | 2021-03-30 | 江苏爱康能源研究院有限公司 | Mesh radio frequency PECVD electrode structure and application method thereof |
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| CN1795530A (en) * | 2003-05-22 | 2006-06-28 | 艾克塞利斯技术公司 | Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith |
| CN101315880A (en) * | 2008-07-17 | 2008-12-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas distribution device and plasma processing apparatus adopting the same |
| CN101556904A (en) * | 2008-04-10 | 2009-10-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas distributor and semiconductor processing equipment applying same |
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| JP2003303819A (en) * | 2002-04-09 | 2003-10-24 | Hitachi Kokusai Electric Inc | Substrate treatment apparatus and method of manufacturing semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1795530A (en) * | 2003-05-22 | 2006-06-28 | 艾克塞利斯技术公司 | Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith |
| CN101556904A (en) * | 2008-04-10 | 2009-10-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas distributor and semiconductor processing equipment applying same |
| CN101315880A (en) * | 2008-07-17 | 2008-12-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas distribution device and plasma processing apparatus adopting the same |
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