CN103715049A - Plasma processing apparatus and method for adjusting process rate of marginal area of substrate - Google Patents
Plasma processing apparatus and method for adjusting process rate of marginal area of substrate Download PDFInfo
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- CN103715049A CN103715049A CN201210378282.XA CN201210378282A CN103715049A CN 103715049 A CN103715049 A CN 103715049A CN 201210378282 A CN201210378282 A CN 201210378282A CN 103715049 A CN103715049 A CN 103715049A
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Abstract
The invention relates to a plasma processing apparatus and a method for adjusting a process rate of a marginal area of a substrate. The plasma processing apparatus comprises a cavity, a pedestal arranged in the cavity, a gas spay header arranged at the top of the cavity, a lower electrode arranged in the pedestal, a focusing ring arranged around the substrate, an edge electrode, and a phase shifter. To be specific, an electrostatic chuck is arranged above the pedestal; and a substrate is arranged above the electrostatic chuck. The gas spay header is used as an upper electrode; and process gas enters the cavity through the gas spay header. The lower electrode is connected with a first radio frequency power supply. The edge electrode approaches the edge area of the substrate and is connected with a second radio frequency power supply. And the phase shifter is connected with the first radio frequency power supply and the second radio frequency power supply. According to the invention, the edge effect can be effectively compensated; and phenomena of arc discharging and sparking due to the short distance between voltages applied to the central zone and the edge zone of the substrate can be avoided.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of method of plasma processing apparatus and adjusting substrate edge region processing procedure speed.
Background technology
Plasma processing apparatus utilizes the operation principle of vacuum reaction chamber to carry out the processing of the substrate of semiconductor chip and plasma flat-plate.The operation principle of vacuum reaction chamber is in vacuum reaction chamber, to pass into the reacting gas that contains suitable etching agent or deposit source gas, and then this vacuum reaction chamber is carried out to radio-frequency (RF) energy input, with activated reactive gas, light and maintain plasma, so that respectively the material layer on etching substrate surface or on substrate surface depositing layer of material, and then semiconductor chip and plasma flat are processed.For instance, capacitive plasma reactor has been widely used for processing semiconductor substrate and display plate, in capacitive plasma reactor, when radio-frequency power is applied to two electrodes one or both of, just between pair of parallel electrode, form capacitive discharge.
The edge effect of semiconductor arts piece is a problem of puzzlement semiconductor industry.The edge effect of so-called semiconductor arts piece refers in plasma treatment procedure, because plasma is subject to electric field controls, and the field intensity of upper and lower the two poles of the earth edge can be subject to the impact of rim condition, total some electric field line is crooked, and cause electric field marginal portion field intensity uneven, and then cause the plasma density of this part inhomogeneous.In this kind of situation, the semiconductor arts piece of producing also exists a circle to process inhomogeneous region around.This non-uniform phenomenon is more obvious when rf electric field frequency is higher, and when rf frequency is greater than 60MHZ and is even greater than 100MHZ, the inhomogeneities degree of this plasma concentration has been difficult to regulate and control with other device as the gathering ring that is positioned at electrostatic chuck edge again.
Because semiconductor arts piece is circular, therefore more outer ring area is larger, and the not good rate of finished products that will cause of the homogeneity of each process procedure of marginal portion significantly declines.In the today that generally adopts 300MHZ processing procedure, the loss that semiconductor arts piece edge effect brings is more huge.
Therefore, need in the industry to improve simply and effectively edge effect, improve processing procedure homogeneity.
Summary of the invention
For the problems referred to above in background technology, the present invention proposes a kind of plasma processing apparatus.
First aspect present invention provides a kind of plasma processing apparatus, comprising:
One chamber;
Be positioned at the pedestal of described chamber, above described pedestal, be provided with electrostatic chuck, above described electrostatic chuck, be placed with substrate;
Be positioned at the gas spray of described chamber roof, it is simultaneously also as top electrode, and process gas enters described chamber by described gas spray;
Be arranged at the bottom electrode among described pedestal, and be connected with the first radio-frequency power supply;
Focusing ring, it is arranged at around described substrate;
Edge electrodes, it is near the fringe region setting of described substrate, and described edge electrodes is connected with the second radio-frequency power supply;
Phase shifter, it is connected in described the first radio-frequency power supply and the second radio-frequency power supply.
Further, described edge electrodes is arranged among described focusing ring, and wherein, described focusing ring is made by insulating material.
Further, described plasma processing apparatus also comprises one first insulator, and it is arranged at described focusing ring below, and wherein, described edge electrodes is arranged among described the first insulator.
Further, described plasma processing apparatus also comprises:
Edge ring, it is peripheral that it is positioned at described focusing ring;
The second insulator, it is positioned at described edge ring below,
Wherein, described edge electrodes is arranged among described edge ring or described the second insulator.
Further, described the first radio-frequency power supply and the second radio-frequency power supply have same or different frequency.
Further, described the second radio-frequency power supply is greater than 13MHZ.
Further, described the second radio-frequency power supply is one of 13.56MHZ, 27MHZ, 60MHZ, 110MHZ, 120MHZ.
Further, described the second radio-frequency power supply is less than 13MHZ.
Further, between described the second radio-frequency power supply and described edge electrodes, be also connected with the second match circuit and the second high frequency filter in turn.
Further, between described the first radio-frequency power supply and bottom electrode, be also connected with the first match circuit.
Further, described bottom electrode is also connected with the 3rd radio-frequency power supply, is also connected with the 3rd match circuit between described the 3rd radio-frequency power supply and described bottom electrode, and wherein, described the first radio-frequency power supply is greater than 13MHZ, and described the 3rd radio-frequency power supply is less than 13MHZ.
Further, the magnitude of voltage that the first radio-frequency power supply produces is V
1=V
10sin (ω
ht+ φ), the magnitude of voltage that the second radio-frequency power supply produces is V
2=V
20sin (ω
hand V t+ φ+Δ φ),
10>V
20.
Second aspect present invention provides a kind of plasma processing apparatus, comprising:
One chamber;
Be positioned at the pedestal of described chamber, above described pedestal, be provided with electrostatic chuck, above described electrostatic chuck, be placed with substrate;
Be positioned at the gas spray of described chamber roof, it is simultaneously also as top electrode, and process gas enters described chamber by described gas spray;
Be arranged at the bottom electrode among described pedestal, and be connected with the first radio-frequency power supply;
Focusing ring, it is arranged at around described substrate;
Edge electrodes, it is near the fringe region setting of described substrate;
Phase shifter, it is connected in described the first radio-frequency power supply,
Wherein, between described the first radio-frequency power supply and described bottom electrode, be also connected with the first matching network and power divider in turn, wherein, described power divider is connected in described phase shifter, and described phase shifter further connects described edge electrodes.
Further, described edge electrodes is arranged among described focusing ring, and wherein, described focusing ring is made by insulating material.
Further, described plasma processing apparatus also comprises one first insulator, and it is arranged at described focusing ring below, and wherein, described edge electrodes is arranged among described the first insulator.
Further, described plasma processing apparatus also comprises:
Edge ring, it is peripheral that it is positioned at described focusing ring;
The second insulator, it is positioned at described edge ring below,
Wherein, described edge electrodes is arranged among described edge ring or described the second insulator.
Further, described the first radio-frequency power supply is greater than 13MHZ.
Further, described the first radio-frequency power supply is one of 13.56MHZ, 27MHZ, 60MHZ, 110MHZ, 120MHZ.
Further, between described the first radio-frequency power supply and bottom electrode, be also connected with the first match circuit.
Further, described bottom electrode is also connected with the 3rd radio-frequency power supply, is also connected with the 3rd match circuit between described the 3rd radio-frequency power supply and described bottom electrode, and wherein, described the first radio-frequency power supply is greater than 13MHZ, and described the 3rd radio-frequency power supply is less than 13MHZ.
Further, the magnitude of voltage that is coupled in described substrate center region is V
1=V
10sin (ω
ht+ φ), being coupled in described substrate edge region magnitude of voltage is V
2=V
20sin (ω
hand V t+ φ+Δ φ),
10>V
20.
Third aspect present invention provides a kind of method of the adjusting substrate edge region processing procedure speed for the plasma processing apparatus described in first aspect present invention or second aspect, it is characterized in that, described method comprises the steps:
In processing procedure process, utilize described phase shifter optionally to adjust the phase difference of the voltage of the radio-frequency (RF) energy that is coupled in described substrate center region and fringe region, to adjust substrate edge region processing procedure speed.
Particularly, utilize described phase shifter optionally to adjust the Δ φ of the voltage of the radio-frequency (RF) energy that is coupled in described substrate center region and fringe region, the magnitude of voltage that makes to be coupled in the radio-frequency (RF) energy in described substrate center region is V
1=V
10sin (ω
ht+ φ), the magnitude of voltage that is coupled in the radio-frequency (RF) energy in described substrate edge region is V
2=V
20sin (ω
hand V t+ φ+Δ φ),
10>V
20.
Plasma processing apparatus provided by the invention is compensate for edge effects effectively, and, avoided the arc discharge and the sparking that owing to putting on the voltage distances in substrate center region and substrate edge region, more closely produce.
Accompanying drawing explanation
Fig. 1 is the structural representation of the plasma processing apparatus of prior art;
Fig. 2 is the structural representation of the plasma processing apparatus of a specific embodiment according to the present invention;
Fig. 3 is the structural representation of the plasma processing apparatus of another specific embodiment according to the present invention;
Fig. 4 is the structural representation of the plasma processing apparatus of another specific embodiment according to the present invention;
Fig. 5 goes back the structural representation of the plasma processing apparatus of a specific embodiment according to the present invention;
Fig. 6 is the first radio-frequency power supply of a specific embodiment and the phase place schematic diagram of the second radio-frequency power supply according to the present invention.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described.
Fig. 1 is the structural representation of the plasma processing apparatus of prior art, and as shown in Figure 1, plasma processing apparatus 300 comprises parallel top electrode 302 and bottom electrode 318, and bottom electrode 318 is connected with radio-frequency power supply, and substrate 306 is placed on base station.In the periphery of substrate 306, be also provided with a focusing ring 312.Focusing ring 312 is also connected with a low frequency radio frequency power supply 322, is also in series with successively matching network 316 and radio-frequency filter 314 between low frequency radio frequency power supply 322 and focusing ring 312.Prior art, is changed process zone and is positioned at the edge effect that sheath layer (Sheath) on substrate 306 carrys out compensates for substrate 306 to the low frequency radio frequency energy that is around coupled of the focusing ring 312 near substrate 306 peripheries by low-frequency filter 314.
Yet, because the above-mentioned edge effect compensation mechanism of prior art is positioned at by adjusting process zone the edge effect that sheath layer (Sheath) on substrate 306 carrys out compensates for substrate 306.Particularly, sheath layer can accelerate charged particle to the speed of substrate 306 bombardment, i.e. particle projectile energy, but cannot change the plasma of process zone, so compensation effect is good not.
In addition, the prior art DC power supply of also taking to be coupled is carried out compensate for edge effects in focusing ring.Yet, the voltage that DC power supply produces can not the amplitude of accommodation, therefore be not easy the magnitude of voltage of regulation and control substrate edge coupling, even can produce suddenly a very large numerical value, particularly at direct voltage Energy Coupling, arrive the region from substrate edge close together, easily produce arc discharge (arcing) and sparking (sparking), thereby substrate is caused to irreversible infringement.
For improving the above-mentioned defect of prior art, the invention provides a kind of plasma processing apparatus that can effective compensation edge effect.
Fig. 2 is the structural representation of the plasma processing apparatus of a specific embodiment according to the present invention.As shown in Figure 1, plasma processing apparatus 100 comprises a chamber 102, is positioned at the pedestal of described chamber 102 belows, wherein, is provided with electrostatic chuck 112 above described pedestal, is placed with a substrate 110 above described electrostatic chuck 112.In described electrostatic chuck 112, be provided with a DC electrode (not shown), it produces electrostatic attraction by DC electrode described substrate 110 is held on the ceramic layer of described electrostatic chuck 112 upper surfaces.Gas spray 108 is arranged at described chamber 102 tops, and described gas spray 108 is simultaneously also as top electrode, and process gas enters described chamber 102 by described gas spray 108.Particularly, described chamber 102 tops are provided with some gas sources, and processing procedure desired gas (comprising reacting gas and modulation gas) enters gas spray 108, and enters chamber by the some gas passages that arrange in gas spray 108.Bottom electrode 116 is arranged among described pedestal, and it is parallel to described top electrode, and bottom electrode 116 is also connected with the first radio-frequency power supply 122.The first radio-frequency power supply 122 coupling radio-frequency energy are in described bottom electrode 116, make to form between upper/lower electrode electric field, reacting gas enters the process volume between substrate 110 and gas spray 108 lower surfaces, and be subject to this electric field excite generation plasma, described plasma bombards and reacts with described substrate 110 towards substrate 110 apparent motions, thereby to substrate 110 processing procedure of being correlated with, such as etching or deposition etc.Described plasma processing apparatus 100 also comprises a focusing ring 118, and it is arranged at around described substrate 110.Confinement ring 106 is for outdoor by processing procedure redundancy material discharge side.
In addition, plasma processing apparatus 100 of the present invention also comprises edge electrodes 120, and it is near the fringe region of described substrate 110, and described edge electrodes is connected with the second radio-frequency power supply 124.And plasma processing apparatus 100 of the present invention also comprises phase shifter 126, it is connected in described the first radio-frequency power supply 122 and the second radio-frequency power supply 124 directly or indirectly.
It should be noted that, the first radio-frequency power supply 122 is coupled in the central area of substrate 110, can control the processing procedure speed in substrate center region, and edge electrodes 120 is near the outer peripheral areas setting of substrate 110, can control the processing procedure speed in substrate edge region.Yet, edge electrodes 120 does not need to be particularly limited for being arranged on certain assembly of plasma processing apparatus 100, as long as it is close to the outer peripheral areas setting of substrate 110, just can generating technique effect, reach goal of the invention of the present invention, for example, described edge electrodes 120 can be arranged in focusing ring 118, the first insulator of focusing ring 118 belows, the edge ring of focusing ring 118 peripheries, and the second insulator of described edge ring below etc.
As shown in Figure 2, according to a specific embodiment of the present invention, described edge electrodes 120 is arranged among described focusing ring 118, and wherein, described focusing ring 118 is made by insulating material.Wherein, described edge electrodes 120 is further connected with the second radio-frequency power supply 124, and described the second radio-frequency power supply 124 is also connected with a phase shifter 126, and described phase shifter 126 can also obtain the angle of described the first radio-frequency power supply 122.
Particularly, radio-frequency energy has certain angle, has different amplitudes, i.e. magnitude of voltage under different angle values.Fig. 6 is the first radio-frequency power supply of a specific embodiment and the phase place schematic diagram of the second radio-frequency power supply according to the present invention, and as shown in the figure, what S1 indicated is the wave form varies of the first radio-frequency power supply 122, and what S2 indicated is the wave form varies of the second radio-frequency power supply 124.In the above-described embodiments, because phase shifter 126 is directly connected in the first radio-frequency power supply 122 and the second radio-frequency power supply 124, it can obtain the angle of the first radio-frequency power supply 122, and regulate accordingly the angle of the second radio-frequency power supply 124, thereby can control the phase difference ΔΦ of the first radio-frequency power supply 122 and the second radio-frequency power supply 124, that is the edge electrodes 124 that, makes the first radio-frequency power supply 122 arrive bottom electrode 116 and the second radio-frequency power supply 124 arrival substrate 110 edges has different phase angles.For example, preferably, the magnitude of voltage that the second radio-frequency power supply 124 produces should be less than the magnitude of voltage that the first radio-frequency power supply 122 produces.Particularly, suppose the magnitude of voltage V that the first radio-frequency power supply 122 produces
1=V
10sin (ω
ht+ φ), the magnitude of voltage V that the second radio-frequency power supply 124 produces
2=V
20sin (ω
ht+ φ+Δ φ), V
10>V
20.
Phase shifter 126 can regulate the first radio-frequency power supply 122 and the second radio-frequency power supply 124 " synchronously " (in-phase) or " asynchronous " (out of phase), thereby it is different with the magnitude of voltage of edge electrodes 124 to make the first radio-frequency power supply 122 and the second radio-frequency power supply 124 be coupled in respectively bottom electrode 116.Particularly, suppose that the first radio-frequency power supply 122 and the second radio-frequency power supply 124 are all high frequency.When both are synchronous, Δ φ=0, the voltage difference of the first radio-frequency power supply 122 and the second radio-frequency power supply 124 is minimum; When both angle is contrary, Δ φ=π, the voltage difference of the first radio-frequency power supply 122 and the second radio-frequency power supply 124 is maximum.Therefore, the characteristic of plasma (for example, the concentration of active particle and temperature etc.) can be along with the variation of the phase difference of the first radio-frequency power supply 122 and the second radio-frequency power supply 124 and change, thereby make further the processing procedure speed (for example etching speed) of substrate edge be controlled by changing the phase difference of the first radio-frequency power supply 122 and the second radio-frequency power supply 124, thereby compensated edge effect.Should be appreciated that the phase difference that the electric field location of substrate edge can be coupled in the electrode of substrate center region and fringe region by change adjusts.
If prior art is coupled in focusing ring and carrys out compensate for edge effects by DC power supply is set, the amplitude of direct voltage (being magnitude of voltage) can not be controlled, and can cause arc discharge and sparking.Yet the present invention passes through to regulate the phase difference of the first radio-frequency power supply 122 and the second radio-frequency power supply 124, thereby control the voltage difference of the first radio-frequency power supply 122 and the second radio-frequency power supply 124, thereby effectively avoided arc discharge and sparking.
Further, described the first radio-frequency power supply 122 and the second radio-frequency power supply 124 have same or different frequency.
Further, described the second radio-frequency power supply 124 is greater than 13MHZ.Preferably, described the first radio-frequency power supply 122 and the second radio-frequency power supply 124 are all high frequency electric source, for example 60MHZ.If prior art is carried out compensate for edge effects by low frequency radio frequency Electric source coupling is set in substrate edge region, can only change process zone and be positioned at the sheath layer on substrate, sheath layer can accelerate charged particle to the speed of substrate bombardment, it is particle projectile energy, but cannot change the plasma of process zone, so compensation effect is good not.The present invention adopts high-frequency radio frequency power supply to be connected in substrate outer peripheral areas, can effectively control the distribution of the plasma of process zone, thereby has effectively compensated edge effect.
Alternatively, described the second radio-frequency power supply is less than 13MHZ.
Further, described the second radio-frequency power supply 124 is one of 13.56MHZ, 27MHZ, 60MHZ, 110MHZ, 120MHZ.
Further, between described the second radio-frequency power supply 124 and described edge electrodes 120, be also connected with the second match circuit 127 and the second high frequency filter 128 in turn.
Further, between described the first radio-frequency power supply 122 and bottom electrode 116, be also connected with the first match circuit 130.
Fig. 3 is the structural representation of the plasma processing apparatus of another specific embodiment according to the present invention, it shows the variation example of above-described embodiment, wherein, described bottom electrode 116 is also connected with the 3rd radio-frequency power supply 132, between described the 3rd radio-frequency power supply 132 and described bottom electrode 116, be also connected with the 3rd match circuit 134, wherein, described the first radio-frequency power supply is greater than 13MHZ, and described the 3rd radio-frequency power supply is less than 13MHZ.Plasma processing apparatus shown in Fig. 3 is dual frequency plasma treatment system (dual-frequency plasma system), and wherein the first radio-frequency power supply is high frequency, for maintaining plasma.The 3rd radio-frequency power supply is low frequency bias power supply, is used to particle to accelerate to provide a bias potential.
According to above-described embodiment variation example, described bottom electrode 116 and described edge electrodes 120 are connected in same radio-frequency power supply.
As shown in Figure 4, second aspect present invention provides a kind of plasma processing apparatus, plasma processing apparatus 100 comprises a chamber 102, be positioned at the pedestal of described chamber 102 belows, wherein, above described pedestal, be provided with electrostatic chuck 112, above described electrostatic chuck 112, be placed with a substrate 110.In described electrostatic chuck 112, be provided with a DC electrode (not shown), it produces electrostatic attraction by DC electrode described substrate 110 is held on the ceramic layer of described electrostatic chuck 112 upper surfaces.Gas spray 108 is arranged at described chamber 102 tops, and described gas spray 108 is simultaneously also as top electrode, and process gas enters described chamber 102 by described gas spray 108.Particularly, described chamber 102 tops are provided with some gas sources, and processing procedure desired gas (comprising reacting gas and modulation gas) enters gas spray 108, and enters chamber by the some gas passages that arrange in gas spray 108.Bottom electrode 116 is arranged among described pedestal, and it is parallel to described top electrode, and bottom electrode 116 is also connected with the first radio-frequency power supply 122.The first radio-frequency power supply 122 coupling radio-frequency energy are in described bottom electrode 116, make to form between upper/lower electrode electric field, reacting gas enters the process volume between substrate 110 and gas spray 108 lower surfaces, and be subject to this electric field excite generation plasma, described plasma bombards and reacts with described substrate 110 towards substrate 110 apparent motions, thereby to substrate 110 processing procedure of being correlated with, such as etching or deposition etc.Described plasma processing apparatus 100 also comprises a focusing ring 118, and it is arranged at around described substrate 110.Confinement ring 106 is for outdoor by processing procedure redundancy material discharge side.
Wherein, phase shifter 126 is connected in described the first radio-frequency power supply 122,
Wherein, between described the first radio-frequency power supply 122 and described bottom electrode 116, be also connected with the first matching network 130 and power divider 136 in turn, wherein, described power divider 136 is connected in described phase shifter 126.Frequency divider 136 is divided into two-way by the first radio-frequency power supply 122, wherein a road is delivered to bottom electrode 116 so that the radio-frequency (RF) energy at coupling-substrate center to be provided, another road is delivered to phase shifter 126 so that the radio-frequency (RF) energy that is coupled in substrate edge to be provided, and the power of this two-way radio-frequency (RF) energy is identical.
Further, described edge electrodes 120 is arranged among described focusing ring 118, and wherein, described focusing ring 118 is made by insulating material.
Further, described plasma processing apparatus 100 also comprises one first insulator, and it is arranged at described focusing ring 118 belows, and wherein, described edge electrodes 120 is arranged among described the first insulator.
Further, described plasma processing apparatus also comprises: edge ring, and it is positioned at described focusing ring 118 peripheries; The second insulator, it is positioned at described edge ring below, and wherein, described edge electrodes is arranged among described edge ring or described the second insulator.
Further, described the first radio-frequency power supply 122 is greater than 13MHZ.
Further, described the first radio-frequency power supply 122 is one of 13.56MHZ, 27MHZ, 60MHZ, 110MHZ, 120MHZ.
Further, between described the first radio-frequency power supply 122 and bottom electrode 116, be also connected with the first match circuit 130.
Described bottom electrode 116 is also connected with the 3rd radio-frequency power supply 132, between described the 3rd radio-frequency power supply 132 and described bottom electrode 116, is also connected with the 3rd match circuit 134, and wherein, described the first radio-frequency power supply is greater than 13MHZ, and described the 3rd radio-frequency power supply is less than 13MHZ.
Further, the magnitude of voltage that the first radio-frequency power supply 122 produces is V
1=V
10sin (ω
ht+ φ).
The voltage distances that puts on substrate center region and substrate edge region if it will be appreciated by those skilled in the art that is nearer, easily produces arc discharge and sparking, thereby substrate is caused to irreversible infringement.Therefore, the present invention can also not be arranged at edge electrodes in focusing ring, but specially for edge electrodes designs an extra assembly that holds, edge electrodes is arranged at apart from substrate edge larger distance, further avoids arc discharge and sparking.
Fig. 5 goes back the structural representation of the plasma processing apparatus of a specific embodiment according to the present invention.Plasma processing apparatus 200 comprises a chamber 202, is positioned at the pedestal of described chamber 202 belows, wherein, is provided with electrostatic chuck 212 above described pedestal, is placed with a substrate 210 above described electrostatic chuck 212.In described electrostatic chuck 212, be provided with a DC electrode (not shown), it produces electrostatic attraction by DC electrode described substrate 210 is held on the ceramic layer of described electrostatic chuck 212 upper surfaces.Gas spray 208 is arranged at described chamber 202 tops, and described gas spray 208 is simultaneously also as top electrode, and process gas enters described chamber 202 by described gas spray 208.Particularly, described chamber 202 tops are provided with some gas sources, and processing procedure desired gas (comprising reacting gas and modulation gas) enters gas spray 208, and enters chamber by the some gas passages that arrange in gas spray 108.Bottom electrode 216 is arranged among described pedestal, and it is parallel to described top electrode, and bottom electrode 216 is also connected with the first radio-frequency power supply 222.The first radio-frequency power supply 222 coupling radio-frequency energy are in described bottom electrode 216, make to form between upper/lower electrode electric field, reacting gas enters the process volume between substrate 210 and gas spray 208 lower surfaces, and be subject to this electric field excite generation plasma, described plasma bombards and reacts with described substrate 210 towards substrate 210 apparent motions, thereby to substrate 210 processing procedure of being correlated with, such as etching or deposition etc.Described plasma processing apparatus 200 also comprises a focusing ring 218, and it is arranged at around described substrate 210.Confinement ring 206 is for outdoor by processing procedure redundancy material discharge side.
Further, according to another specific embodiment of the present invention, described plasma processing apparatus also comprises edge ring 217, and it is positioned at described dead ring 218 peripheries.The second insulator 215 is positioned at described edge ring 217 belows, and alternatively, described edge electrodes 220 is arranged among described edge ring 217 or described the second insulator 215.
As shown in Figure 5, described edge electrodes 220 is preferably arranged among edge ring 217.It should be noted that, being arranged so that of edge electrodes 220 also formed electric field between edge electrodes 220 and top electrode, the formation of electric field can compensate for edge effects, but also can make the upper surface of the assembly of plasma bombardment receiving edges electrode 220 simultaneously, thereby is corroded lentamente.Yet, edge ring 217 small volumes, and change conveniently, engineer only needs to change in good time, and this has more superiority among edge electrodes 220 is arranged at focusing ring 218, can effectively save cost, avoids the wasting of resources.
Further, according to still another embodiment of the invention, described plasma processing apparatus 200 also comprises one first insulator 214, and it is arranged at described focusing ring 218 belows, alternatively, described edge electrodes 120 is arranged at (not shown) among described the first insulator 214.
As shown in Fig. 2 ~ Fig. 6, third aspect present invention provides a kind of method of the adjusting substrate edge region processing procedure speed for the above-mentioned plasma processing apparatus of the present invention, it is characterized in that, described method comprises the steps:
In processing procedure process, utilize described phase shifter optionally to adjust the phase difference of the voltage of the radio-frequency (RF) energy that is coupled in described substrate center region and fringe region, to adjust substrate edge region processing procedure speed.
Particularly, utilize described phase shifter optionally to adjust the Δ φ of the voltage of the radio-frequency (RF) energy that is coupled in described substrate center region and fringe region, the magnitude of voltage that makes to be coupled in the radio-frequency (RF) energy in described substrate center region is V
1=V
10sin (ω
ht+ φ), the magnitude of voltage that is coupled in the radio-frequency (RF) energy in described substrate edge region is V
2=V
20sin (ω
hand V t+ φ+Δ φ),
10>V
20.
Although content of the present invention has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.Those skilled in the art, read after foregoing, for multiple modification of the present invention with to substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (23)
1. a plasma processing apparatus, comprising:
One chamber;
Be positioned at the pedestal of described chamber, above described pedestal, be provided with electrostatic chuck, above described electrostatic chuck, be placed with substrate;
Be positioned at the gas spray of described chamber roof, it is simultaneously also as top electrode, and process gas enters described chamber by described gas spray;
Be arranged at the bottom electrode among described pedestal, and be connected with the first radio-frequency power supply;
Focusing ring, it is arranged at around described substrate;
Edge electrodes, it is near the fringe region setting of described substrate, and described edge electrodes is connected with the second radio-frequency power supply;
Phase shifter, it is connected in described the first radio-frequency power supply and the second radio-frequency power supply.
2. plasma processing apparatus according to claim 1, is characterized in that, described edge electrodes is arranged among described focusing ring, and wherein, described focusing ring is made by insulating material.
3. plasma processing apparatus according to claim 1, is characterized in that, described plasma processing apparatus also comprises one first insulator, and it is arranged at described focusing ring below, and wherein, described edge electrodes is arranged among described the first insulator.
4. plasma processing apparatus according to claim 1, is characterized in that, described plasma processing apparatus also comprises:
Edge ring, it is peripheral that it is positioned at described focusing ring;
The second insulator, it is positioned at described edge ring below,
Wherein, described edge electrodes is arranged among described edge ring or described the second insulator.
5. plasma processing apparatus according to claim 1, is characterized in that, described the first radio-frequency power supply and the second radio-frequency power supply have same or different frequency.
6. plasma processing apparatus according to claim 5, is characterized in that, described the second radio-frequency power supply is greater than 13MHZ.
7. plasma processing apparatus according to claim 6, is characterized in that, described the second radio-frequency power supply is one of 13.56MHZ, 27MHZ, 60MHZ, 110MHZ, 120MHZ.
8. plasma processing apparatus according to claim 5, is characterized in that, described the second radio-frequency power supply is less than 13MHZ.
9. plasma processing apparatus according to claim 1, is characterized in that, is also connected with the second match circuit and the second high frequency filter between described the second radio-frequency power supply and described edge electrodes in turn.
10. plasma processing apparatus according to claim 9, is characterized in that, between described the first radio-frequency power supply and bottom electrode, is also connected with the first match circuit.
11. plasma processing apparatus according to claim 10, it is characterized in that, described bottom electrode is also connected with the 3rd radio-frequency power supply, between described the 3rd radio-frequency power supply and described bottom electrode, be also connected with the 3rd match circuit, wherein, described the first radio-frequency power supply is greater than 13MHZ, and described the 3rd radio-frequency power supply is less than 13MHZ.
12. plasma processing apparatus according to claim 1, is characterized in that, the magnitude of voltage that the first radio-frequency power supply produces is V
1=V
10sin (ω
ht+ φ), the magnitude of voltage that the second radio-frequency power supply produces is V
2=V
20sin (ω
hand V t+ φ+Δ φ),
10>V
20.
13. 1 kinds of plasma processing apparatus, comprising:
One chamber;
Be positioned at the pedestal of described chamber, above described pedestal, be provided with electrostatic chuck, above described electrostatic chuck, be placed with substrate;
Be positioned at the gas spray of described chamber roof, it is simultaneously also as top electrode, and process gas enters described chamber by described gas spray;
Be arranged at the bottom electrode among described pedestal, and be connected with the first radio-frequency power supply;
Focusing ring, it is arranged at around described substrate;
Edge electrodes, it is near the fringe region setting of described substrate;
Phase shifter, it is connected in described the first radio-frequency power supply,
Wherein, between described the first radio-frequency power supply and described bottom electrode, be also connected with power divider, wherein, described power divider is connected in described phase shifter, and described phase shifter further connects described edge electrodes.
14. plasma processing apparatus according to claim 13, is characterized in that, described edge electrodes is arranged among described focusing ring, and wherein, described focusing ring is made by insulating material.
15. plasma processing apparatus according to claim 13, is characterized in that, described plasma processing apparatus also comprises one first insulator, and it is arranged at described focusing ring below, and wherein, described edge electrodes is arranged among described the first insulator.
16. plasma processing apparatus according to claim 13, is characterized in that, described plasma processing apparatus also comprises:
Edge ring, it is peripheral that it is positioned at described focusing ring;
The second insulator, it is positioned at described edge ring below,
Wherein, described edge electrodes is arranged among described edge ring or described the second insulator.
17. plasma processing apparatus according to claim 13, is characterized in that, described the first radio-frequency power supply is greater than 13MHZ.
18. plasma processing apparatus according to claim 17, is characterized in that, described the first radio-frequency power supply is one of 13.56MHZ, 27MHZ, 60MHZ, 110MHZ, 120MHZ.
19. plasma processing apparatus according to claim 13, is characterized in that, between described the first radio-frequency power supply and bottom electrode, are also connected with the first match circuit.
20. plasma processing apparatus according to claim 19, it is characterized in that, described bottom electrode is also connected with the 3rd radio-frequency power supply, between described the 3rd radio-frequency power supply and described bottom electrode, be also connected with the 3rd match circuit, wherein, described the first radio-frequency power supply is greater than 13MHZ, and described the 3rd radio-frequency power supply is less than 13MHZ.
21. plasma processing apparatus according to claim 13, is characterized in that, the magnitude of voltage that is coupled in described substrate center region is V
1=V
10sin (ω
ht+ φ), being coupled in described substrate edge region magnitude of voltage is V
2=V
20sin (ω
hand V t+ φ+Δ φ),
10>V
20.
22. 1 kinds of methods for the adjusting substrate edge region processing procedure speed of the plasma processing apparatus described in claim 1 to 21 any one, is characterized in that, described method comprises the steps:
In processing procedure process, utilize described phase shifter optionally to adjust the phase difference of the voltage of the radio-frequency (RF) energy that is coupled in described substrate center region and fringe region, to adjust substrate edge region processing procedure speed.
23. methods according to claim 22, it is characterized in that, utilize described phase shifter optionally to adjust the Δ φ of the voltage of the radio-frequency (RF) energy that is coupled in described substrate center region and fringe region, the magnitude of voltage that makes to be coupled in the radio-frequency (RF) energy in described substrate center region is V
1=V
10sin (ω
ht+ φ), the magnitude of voltage that is coupled in the radio-frequency (RF) energy in described substrate edge region is V
2=V
20sin (ω
hand V t+ φ+Δ φ),
10>V
20.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6232236B1 (en) * | 1999-08-03 | 2001-05-15 | Applied Materials, Inc. | Apparatus and method for controlling plasma uniformity in a semiconductor wafer processing system |
| US20040144493A1 (en) * | 1999-06-30 | 2004-07-29 | Lam Research Corporation | Moveable barrier for multiple etch processes |
| CN1595618A (en) * | 2003-05-27 | 2005-03-16 | 三星电子株式会社 | Wafer edge etching apparatus and method |
| US20050224344A1 (en) * | 2004-04-08 | 2005-10-13 | Masahide Iwasaki | Plasma processing apparatus and method |
| CN101150044A (en) * | 2006-09-19 | 2008-03-26 | 东京毅力科创株式会社 | Focus ring and plasma processing apparatus |
| CN101933402A (en) * | 2008-01-31 | 2010-12-29 | 应用材料股份有限公司 | Multiple phase RF power for electrode of plasma chamber |
| US20110192349A1 (en) * | 2010-01-12 | 2011-08-11 | Hammond Iv Edward P | Phase-Modulated RF Power for Plasma Chamber Electrode |
-
2012
- 2012-09-29 CN CN201210378282.XA patent/CN103715049B/en active Active
-
2013
- 2013-09-27 TW TW102135125A patent/TW201428845A/en unknown
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040144493A1 (en) * | 1999-06-30 | 2004-07-29 | Lam Research Corporation | Moveable barrier for multiple etch processes |
| US6232236B1 (en) * | 1999-08-03 | 2001-05-15 | Applied Materials, Inc. | Apparatus and method for controlling plasma uniformity in a semiconductor wafer processing system |
| CN1595618A (en) * | 2003-05-27 | 2005-03-16 | 三星电子株式会社 | Wafer edge etching apparatus and method |
| US20050224344A1 (en) * | 2004-04-08 | 2005-10-13 | Masahide Iwasaki | Plasma processing apparatus and method |
| CN101150044A (en) * | 2006-09-19 | 2008-03-26 | 东京毅力科创株式会社 | Focus ring and plasma processing apparatus |
| CN101933402A (en) * | 2008-01-31 | 2010-12-29 | 应用材料股份有限公司 | Multiple phase RF power for electrode of plasma chamber |
| US20110192349A1 (en) * | 2010-01-12 | 2011-08-11 | Hammond Iv Edward P | Phase-Modulated RF Power for Plasma Chamber Electrode |
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742146B (en) * | 2014-12-26 | 2018-01-05 | 东京毅力科创株式会社 | Mounting table and plasma processing apparatus |
| CN105742146A (en) * | 2014-12-26 | 2016-07-06 | 东京毅力科创株式会社 | Mounting table and plasma processing apparatus |
| KR101800649B1 (en) * | 2015-05-28 | 2017-11-23 | 가부시키가이샤 히다치 하이테크놀로지즈 | Plasma processing apparatus and plasma processing method |
| JP2016225376A (en) * | 2015-05-28 | 2016-12-28 | 株式会社日立ハイテクノロジーズ | Plasma processing device and plasma processing method |
| TWI768395B (en) * | 2015-05-28 | 2022-06-21 | 日商日立全球先端科技股份有限公司 | Plasma processing apparatus and plasma processing method |
| TWI701705B (en) * | 2015-05-28 | 2020-08-11 | 日商日立全球先端科技股份有限公司 | Plasma processing apparatus and plasma processing method |
| US11842885B2 (en) | 2015-05-28 | 2023-12-12 | Hitachi High-Tech Corporation | Plasma processing apparatus and plasma processing method |
| CN106920729A (en) * | 2015-12-28 | 2017-07-04 | 中微半导体设备(上海)有限公司 | The plasma processing apparatus and method of a kind of uniform etching substrate |
| CN106920729B (en) * | 2015-12-28 | 2019-05-31 | 中微半导体设备(上海)股份有限公司 | A kind of plasma processing apparatus and method of uniform etching substrate |
| KR101794654B1 (en) * | 2015-12-30 | 2017-11-07 | 엘지디스플레이 주식회사 | Apparatus for processing flexible substrate |
| CN107768299A (en) * | 2016-08-16 | 2018-03-06 | 北京北方华创微电子装备有限公司 | Bogey and semiconductor processing equipment |
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| US11830747B2 (en) | 2017-12-29 | 2023-11-28 | Advanced Micro-Fabrication Equipment Inc. China | Plasma reactor having a function of tuning low frequency RF power distribution |
| CN109994355B (en) * | 2017-12-29 | 2021-11-02 | 中微半导体设备(上海)股份有限公司 | Plasma reactor with low-frequency radio frequency power distribution adjusting function |
| CN110323117A (en) * | 2018-03-28 | 2019-10-11 | 三星电子株式会社 | Apparatus for processing plasma |
| CN110416049A (en) * | 2018-04-28 | 2019-11-05 | 中微半导体设备(上海)股份有限公司 | The CCP etching device and its method of adjustable edge radio frequency plasma distribution |
| CN110880443A (en) * | 2018-09-06 | 2020-03-13 | 株式会社日立高新技术 | Plasma processing apparatus |
| CN110880443B (en) * | 2018-09-06 | 2022-07-08 | 株式会社日立高新技术 | Plasma processing apparatus |
| US11615942B2 (en) | 2018-10-18 | 2023-03-28 | Beijing Naura Microelectronics Equipment Co., Ltd. | Control method of radiofrequency source |
| WO2020078393A1 (en) * | 2018-10-18 | 2020-04-23 | 北京北方华创微电子装备有限公司 | Method for controlling radio frequency source |
| CN111180303A (en) * | 2018-11-13 | 2020-05-19 | 三星电子株式会社 | Plasma processing apparatus |
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Also Published As
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|---|---|
| TW201428845A (en) | 2014-07-16 |
| TWI514468B (en) | 2015-12-21 |
| CN103715049B (en) | 2016-05-04 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |