CN1595618A - Wafer edge etching apparatus and method - Google Patents
Wafer edge etching apparatus and method Download PDFInfo
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- CN1595618A CN1595618A CN 200410047417 CN200410047417A CN1595618A CN 1595618 A CN1595618 A CN 1595618A CN 200410047417 CN200410047417 CN 200410047417 CN 200410047417 A CN200410047417 A CN 200410047417A CN 1595618 A CN1595618 A CN 1595618A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
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Abstract
A wafer edge etching apparatus and method for etching an edge of a semiconductor wafer including a bottom electrode, arranged below the semiconductor wafer and acting as a stage to support the semiconductor wafer. A method of etching a semiconductor wafer including inserting a semiconductor wafer into a chamber, increasing a pressure in the chamber, supplying at least one etchant gas to the chamber while further increasing the pressure, supplying power to the chamber and etching the semiconductor wafer at the edge bead or the backside of the semiconductor wafer, discontinuing the power and the etchant gas, venting the chamber with a venting gas, and purging the venting gas from the chamber.
Description
This U.S. non-provisional application all is incorporated herein by reference at this according to the priority that 35U.S.C. § 119 requires the Korean Patent Application No. 2003-33844 of application on May 27th, 2003.
Technical field
The present invention relates to wafer edge etching apparatus and method.
Background technology
Carry out the Waffer edge etching with the thin layer on the outer peripheral areas of removing wafer.The outer peripheral areas of wafer usually is called edge circle (bead).It is because the thin layer on the edge may cause defective and reduce rate of finished products on chip in manufacturing process's process that the edge circle of wafer is etched.Can remove thin layer from the edge by wet type or dry etching method.Because chip size reduces, the needs at etching edge become even more important.
Conventional device is at edge circle etched film layer.But in conventional device, the plasma that produces by this device is too weak and can not be at edge circle etched film layer.A solution of this problem is to increase power.But the power of increase may make chip warpage.
Summary of the invention
In the exemplary embodiment, the present invention is intended to a kind of equipment of etching semiconductor Waffer edge, and this equipment comprises hearth electrode, and hearth electrode is arranged in below the semiconductor wafer and is used as the objective table of supporting semiconductor wafers.
In exemplary embodiment, the present invention is intended to a kind of method of etching semiconductor wafer, and this method comprises to be inserted semiconductor wafer in the chamber; Increase indoor pressure, provide at least a etchant gasses, simultaneously further increase pressure to the chamber; Provide power supply to the chamber and at the edge of semiconductor wafer circle or back etching semiconductor wafer, interrupt power supply and etchant gasses, the chamber is ventilated, and purify ventilating gas from the chamber with ventilating gas.
In exemplary embodiment, the present invention is intended to a kind of method of etching semiconductor wafer, this method comprises the following objective table as supporting semiconductor wafers that hearth electrode is arranged in semiconductor wafer, at the edge of semiconductor wafer circle or back etching semiconductor wafer, and keep the spacing between semiconductor wafer and the insulation board to be about 0.2 to 1.0mm.
In the exemplary embodiment, the present invention is intended to a kind of method of etching semiconductor wafer, this method is included in and arranges the insulation board that comprises projection on the semiconductor wafer, at the edge of semiconductor wafer circle or back etching semiconductor wafer, and to keep spacing between semiconductor wafer and the insulation board be about 0.2 to 1.0mm.
In exemplary embodiment, the present invention is intended to a kind of method of etching semiconductor wafer, this method comprise with hearth electrode be arranged in semiconductor wafer below, hearth electrode comprises a plurality of open recess, and at the edge of semiconductor wafer circle or back etching semiconductor wafer.
In the exemplary embodiment, the present invention is intended to a kind of insulation board, and this insulation board comprises the body of being made by insulating material and comprises ramped surfaces and the projection on cliff surface.
Description of drawings
Fig. 1 shows the equipment 100 according to exemplary embodiment of the present invention.
Fig. 2 illustrates in greater detail the exemplary part of the equipment of Fig. 1.
Fig. 3 illustrates in greater detail the exemplary protrusions of Fig. 2.
Fig. 4 A shows hearth electrode and the objective table of Fig. 1 in the exemplary embodiment of the present invention.
Fig. 4 B shows the top electrode in the exemplary embodiment of the present invention and the schematic diagram of insulation board.
Fig. 4 C shows the hearth electrode in the exemplary embodiment of the present invention and the plane graph of objective table and edge electrodes.
Fig. 5 shows hearth electrode in the exemplary embodiment of the present invention and the exemplary relation between objective table, isolator and/or insulator, wafer and the edge electrodes.
Fig. 6 shows the equipment according to another exemplary embodiment of the present invention.
Fig. 7 shows the equipment according to another exemplary embodiment of the present invention.
Fig. 8 shows the method according to exemplary embodiment of the present invention.
Fig. 9 shows the exemplary wafer of amplifying after the example procedure of etching procedure such as Fig. 8.
Figure 10 A and 10B show respectively according to the cellular zone of the wafer of exemplary embodiment gained of the present invention and marginal zone.
Figure 11 shows according to exemplary embodiment of the present invention can be used for the exemplary process conditions of etched wafer 1.
Figure 12 A-C shows result of the test, and expression is according to the relation between the etch rate of the various oxides on the wafer of exemplary embodiment of the present invention.
Figure 13 show of the present invention exemplary in apart from the length of the boundary point of wafer and the function curve of the spacing between insulation board and the top electrode.
Figure 14 shows the variable spacing according to exemplary embodiment of the present invention.
Figure 15 shows the profile that is used to handle according to the apparatus for processing plasma of the Waffer edge of exemplary embodiment of the present invention.
Embodiment
To understand the present invention more comprehensively from the detailed description and the accompanying drawings given below, these the detailed description and the accompanying drawings are property purpose as an illustration only, does not therefore limit the present invention.
Figure 1A shows the equipment 100 according to exemplary embodiment of the present invention.This equipment 100 comprises top electrode 10, hearth electrode and objective table 20, edge electrodes 30 and insulation board 40, RF power supply 50, isolator and/or insulator 60, central nozzle 70 and handles nozzle 80.In equipment shown in Figure 1 100, top electrode 10 and edge electrodes 30 are anodes, and hearth electrode 20 is negative electrodes.But each can be opposite in other exemplary embodiment of the present invention.As shown in Figure 1, hearth electrode 20 supporting wafers 1, and top electrode 10 and edge electrodes 30 produce plasma on the contrary at the edge and/or the back side of wafer 1.The etched portions A at wafer 1 edge is the part that wish etching.Because provide RF power by RF power line 50 by wafer 1, lower power produces sufficiently suitable plasma, with the thin layer on the etched wafer 1.The example of lower-wattage is 500W.If RF power height, promptly normally used RF power in the general semiconductor etcher may cause electric arc at the edge circle so.
Fig. 2 illustrates in greater detail the exemplary part of the equipment 100 of Fig. 1.Specifically, Fig. 2 illustrates in greater detail top electrode 10, hearth electrode 20, edge electrodes 30, insulation board 40 and wafer 1.As shown in Figure 2, insulation board 40 and wafer 1 are by variable range H separately.As shown in Figure 2, insulation board can comprise projection 41.In the exemplary embodiment, projection 41 has inclined-plane or other profiles of direct process gas, prevents from or prevents basically to handle gas thus and flow on the center of wafer in the etching procedure process.Although the projection of Fig. 2 41 has specific shape, should be noted that this shape is exemplary, suitably direct process gas also can be used away from other shapes of the center of wafer 1 in the etching procedure process.
Fig. 3 illustrates in greater detail the exemplary protrusions 41 of Fig. 2.As shown in the figure, projection 41 comprises sloping portion 43 and cliff 45.Cliff 45 forms gap 44 with top electrode 10.Gap 44 between projection 41 and the top electrode 10 can Be Controlled, with the etched area of control wafer 1.In the exemplary embodiment, gap 44 is uniformly or uniform basically, although these there is no need.In other exemplary embodiments, the shape of cliff 45 can be designed as the durability that strengthens cliff 45/ or insulation board 40.
Fig. 4 A shows hearth electrode and the objective table 20 of the Fig. 1 in the exemplary embodiment of the present invention.Shown in Fig. 4 A, hearth electrode 20 comprises one or more grooves 31.One or more grooves 31 reduce similitude (likelihood) or prevent that wafer 1 is from hearth electrode and objective table 20 landings.Shown in Fig. 4 A, one or more grooves 31 are shown as from the linear radiation of the central straight of hearth electrode 20.In other exemplary embodiments, groove 31 can be a curve, and in other exemplary embodiment of the present invention, straight and/or crooked groove 31 can be from the center of hearth electrode 20 with external radiation.In exemplary embodiment of the present invention, groove 31 form with closed figures as opposite opening figure such as circle, rectangle, triangles.In exemplary embodiment of the present invention, hearth electrode and objective table 20 can comprise one or more screws 33 and/or one or more picker (liftpin) hole 35.
Fig. 4 B shows the top electrode 10 in the exemplary embodiment of the present invention and the schematic diagram of insulation board 40, and Fig. 4 C shows the hearth electrode in the exemplary embodiment of the present invention and the plane graph of objective table 20 and edge electrodes 30.
Fig. 4 B shows the top that distribute a kind of (or multiple) handles gas and/or a kind of (or multiple) inert gas.Shown in Fig. 4 B, top electrode 10 can comprise that one or more processing gas sources 75 and one or more inert gas source 76 and subsidiary top electrode support 74a.Also shown in Fig. 4 B, insulation board 40 can comprise one or more blast pipe 79c that append and one or more insulation board 79d that appends.
In exemplary embodiment of the present invention, top electrode 10 comprises one or more screw 74c, 79b, so that insulation board 40 is connected to top electrode 10.In exemplary embodiment of the present invention, insulation board 40 comprises one or more screw 79a, insulation board 40 is connected to one or more insulation board 79d that append.
Fig. 4 C shows the bottom of loaded with wafers 1.Shown in Fig. 4 C, between hearth electrode 20 and edge electrodes 30, can use first insulator 84 (can be annular shape) and second insulator 85 (can be the cylindrical plate shape).
Fig. 5 shows hearth electrode in exemplary embodiment of the present invention and the relation between objective table 20, isolator and/or insulator 60, wafer 1 and the edge electrodes 30.
Fig. 6 shows the equipment 200 according to another exemplary embodiment of the present invention.As shown in Figure 6, equipment 200 comprises top electrode 110 and hearth electrode and objective table 120, first edge electrodes 130, second edge electrodes 140, insulator 150, RF power supply 160 and earth terminal 170.As shown in Figure 6, hearth electrode and objective table 120 supporting wafers 1, and top electrode 110, first edge electrodes 130 and second edge electrodes produce plasma on the contrary at the edge of wafer 1 circle and/or the back side.As mentioned above, in conjunction with embodiment shown in Figure 1, each can be male or female for top electrode 110, hearth electrode and objective table 120, first electrode 130 and second electrode 140.
In the exemplary embodiment, first edge electrodes 130 and/or second edge electrodes 140 are annular electrodes, and these make the edge circle and/or the back side of plasma focus wafer 1.
In exemplary embodiment shown in Figure 6, because provide RF power, so lower power can be used for producing enough plasmas, with the thin layer on the etched wafer 1 by wafer 1.The example of lower-wattage is 500 watts.As mentioned above, 2000 watts conventional RF power may cause electric arc at the edge circle.
It should be noted that each exemplary embodiment that in exemplary embodiment shown in Figure 6, also can use the insulation board shown in Fig. 2 and 4 and/or each exemplary embodiment of the hearth electrode 20 shown in the Figure 4 and 5.
Fig. 7 shows the equipment 300 according to another exemplary embodiment of the present invention.As shown in the figure, equipment 300 comprises hearth electrode and objective table 220, edge electrodes 240, insulator 250 and RF power supply 280.As shown in Figure 7, hearth electrode and objective table 220 supporting wafers 1.Also as shown in Figure 7, edge electrodes 240 is ring edge electrodes, and this electrode produces plasma on the contrary at the edge of wafer 1 circle and/or the back side.
It should be noted that each exemplary embodiment of the insulation board shown in Fig. 2 and 3 and/or each exemplary embodiment of the hearth electrode 20 shown in Fig. 3 and 5 also can be used in combination with exemplary embodiment shown in Figure 7.
Fig. 8 shows according to illustrative methods of the present invention.In step S10, wafer 1 is loaded in the chamber, at step S20, reduce indoor pressure.At step S30, at least a etching gas is fed to the chamber, simultaneously increase pressure.At step S30, power supply also offers the chamber, with at the edge of semiconductor wafer circle or back-etching semiconductor wafer.After step S30, be supplied to and lose gas after a little while and end the end power supply, and, tail gas is supplied to the chamber at step S40.At step S50, remove tail gas from the chamber, and at step S60, from the chamber unloading wafer.
Fig. 9 shows the amplification example of wafer 1 after the exemplary process of etching procedure such as Fig. 8.Figure 10 A and 10B show cellular zone and the edge according to the wafer 1 of exemplary embodiment gained of the present invention respectively.Shown in Figure 10 A, wafer 1 comprises silicon substrate 310, shallow groove isolation layer (STI) layer 320, insulating barrier 330, tungsten (W) layer 340, the first/the second nitride layer 350 and oxide skin(coating) 360.Shown in Figure 10 A, wafer 1 cellular zone comprises the silicon substrate 310 with active area 311 and passive region 312.Cellular zone also comprises the groove that forms from (STI) 320 by shallow trench isolation.Cellular zone can further include polysilicon layer 325.
Insulating barrier 330 can be the boron-phosphorosilicate glass (BPSG) or the tetraethoxysilane (TEOS) of the boron-doping of 3000-8000 thickness.Tungsten (W) layer 340 can use WF
2The thickness that gas forms and can have 300 to 1000 .First and second nitride layers 330,350 can be respectively the thickness of 1500-3500 and 150-750 and use SiH
4+ NH
3Gas forms.Oxide skin(coating) 360 can use SiH
4+ O
2Gas forms and can be the thickness of 1000-5000 .
It should be noted that above-mentioned thickness and material are exemplary, also can use known other thickness of those of ordinary skill in the field and material.
Figure 11 shows and can be used for the exemplary process conditions of etching according to the wafer of exemplary embodiment of the present invention.As indicated in Figure 11, can the processing stage of two, prepare to be used for the chamber of etching.In the phase I, increase pressure, wherein further increase pressure of second preparatory stage and supply a kind of (or multiple) etching gas.In the etch step process, keep-up pressure, keep the supply of a kind of (or multiple) etching gas, and RF is provided power.In first preparatory stage, pressure can be increased to 1 torr.In second preparatory stage, pressure can be raised to 1.5 torrs, and etching gas can comprise argon gas and/or CF
4Gas, the extent of supply for example argon gas are 20-200sccm, CF
4Gas is 100-250sccm.In the exemplary embodiment, in the etch step process, be raised to 500 watts at the second preparatory stage RF power, pressure keeps 1.5 torrs, keeps the flow and second preparatory stage of a kind of (or multiple) etching gas constant.
In case wafer 1 is etched, this chamber can be ventilated (vented), also two stage manner.In the phase I, stop power supply, pressure recovers normal and discharges the N of gas as supply
2Gas, in the exemplary embodiment, the flow of Purge gas is 10-200sccm.In second aeration step, still supply ventilating gas, and also supply Purge gas.In the exemplary embodiment, Purge gas is an inert gas and with the speed supply of 1200sccm.In the exemplary embodiment, should be noted that in edge etching procedure process this gas such as inert gas do not flow through central nozzle shown in Figure 1 70, because this gas may cause electric arc at the core of wafer 1.
It should be noted that above-mentioned power, gas, pressure and flow velocity are exemplary, also can use known other power of those of ordinary skill in the field, gas, pressure and flow velocity.It should be noted that above-mentioned preparation, etching and aeration step are exemplary, and also can form with the known more or less step of those of ordinary skill in the field.
This gas should also be noted that in exemplary embodiment of the present invention a kind of (or multiple) gas such as a kind of (or multiple) inert gas do not flow through central nozzle 70 in edge etching procedure process, because may cause electric arc at the core of substrate.
Figure 12 A-C shows example results, shows the relation between the etch rate of the various oxides on the wafer, only shows the Waffer edge part of etching and does not have the center wafer part of etching.The condition that obtains the result of Figure 12 A-C comprises the process gas of pressure, argon gas and the CF4 of the RF power of 500W, 1.5 torrs, and wherein argon gas is supplied with 70sccm, CF
4Gas is supplied with 150sccm, and the gap of 1.5mm.Figure 12 A-C shows the different material layer that has same or analogous etch rate under identical or similar process conditions.As a result, can remove different material layers at a process, and not change or change basically process conditions.These are better than using the conventional wet type method of chemical agent, and wherein the different chemical agent is used for removing different material layers.
Figure 13 show insulation board in the exemplary embodiment of the present invention and the gap between the top electrode 44 (X-axis) with from the center of wafer to the function curve of the length L of the boundary point of wafer.As shown in figure 13, L adds the radius that A equals wafer 1.For example, the expression of first among Figure 13 uses the spacing 44 of 200mm diameter wafer (100mm radius wafer) and 1.0mm to make the etched portions A of 2.4mm.As Figure 13 as can be seen, along with spacing 44 increases, L reduces (correspondingly A increases).
Figure 14 is by the length (X-axis) of the Semiconductor substrate of many different H values (as shown in the figure, between 0.3 and 10.0) and the function curve of etch rate (Y-axis).As shown in the figure, there is the positivity correlation between the cliff 45 of distance H between insulation board 40 and the wafer 1 and insulation board 40 and the spacing 44 between the top electrode 10.In the exemplary curve of Figure 14, using the spacing 44 of 1.6mm and layer to be etched is oxide.
Figure 14 shows the data of several different H values, although the distance according to other exemplary embodiment of the present invention H also suits from 0.3 millimeter to 10.0 millimeters, but some of them show good performance (for example, 0.3,0.4,0.5,0.7 and 1.0 millimeter).
Figure 15 shows the profile that is used to handle according to the apparatus for processing plasma of the Waffer edge of exemplary embodiment of the present invention.As shown in the figure, apparatus for processing plasma can comprise chamber 70, locular wall 71, elastomeric element 71a, wafer inlet/outlet 72, the Purge gas inlet, top electrode 10, the support 74a that is used for top electrode 10, stem stem 74b, handle gas source 75, handle gas line 75a, inert gas source 76, inert gas pipeline 76b, the pole plate 77 of the top electrode 10 that can move up and down, the support 77a that is used for the pole plate 77 of top electrode 10, the driver 78 that is used for the pole plate 77 of top electrode 10, insulation board 40, the insulation board 40a that appends, the blast pipe 79c that appends, wafer 1, hearth electrode and objective table 20, first insulator 84, second insulator 85, edge electrodes 30, picker 88 (on hearth electrode and objective table 20, to receive and loaded with wafers 1), baffle plate 90 (handling gas or inert gas) to discharge equably, transducer 91, cooling fluid pipeline 92, liquid coolant sources 94, RF power supply 96, picker pole plate 97, the driver 98 and the exhaust pump 99 that are used for picker pole plate 97.
In the exemplary embodiment, treatment facility can comprise a more than chamber.In the exemplary embodiment, this equipment comprises more than preparation platform, a more than process chamber and a more than clean room and at least one transfer chamber.In this way, a wafer can be loaded, and another wafer just is transmitted simultaneously, and another wafer is just processed.
As explained above, in the exemplary embodiment, power such as RF power provide by wafer, and produce enough power to produce the plasma of etched film layer.Notice power can by replace wafer or except that wafer other layer provide, known as those of ordinary skill in the field.Also note that this power can be less than the conventional power of 2000W, as the 500W that describes in conjunction with one or more exemplary embodiments of the present invention.
In the exemplary embodiment, top electrode 10 is solid electrode plates.
In exemplary embodiment of the present invention, spacing is used for controlling size and the etched area on the semiconductor wafer.In other exemplary embodiments, use additional interchangeable insulation board, each is adjacent to the solid top electrode and arranges, and each has different gap sizes betwixt.In the exemplary embodiment, the spacing between semiconductor wafer and the insulation board about 0.2 and 1.0mn between.
In the exemplary embodiment, can use O
2And SF
6As etching gas, separately or with argon gas and/or CF
4Gas is used in combination.In the exemplary embodiment, the layer that is hopeful on the etching gas etching semiconductor wafer.
In the exemplary embodiment, insulation board is made of insulating material such as pottery and/or quartz.
Therefore described the present invention, but can to change with multiple mode be conspicuous to same part.This change should not be regarded as and deviates from the spirit and scope of the present invention, and is that conspicuous all this improvement all are included in the scope of following claim to the technical staff in described field.
Claims (44)
1, a kind of equipment that is used for the etching semiconductor Waffer edge comprises:
Hearth electrode, this hearth electrode are arranged in the following of semiconductor wafer and are used as the objective table of supporting semiconductor wafers.
2, equipment as claimed in claim 1 also comprises:
Be arranged in the solid panel top electrode on the semiconductor wafer.
3, equipment as claimed in claim 1 also comprises:
Be arranged in the annular upper electrode on the semiconductor wafer.
4, equipment as claimed in claim 2 also comprises:
Be arranged in the lower edge electrode below the semiconductor wafer, wherein solid top electrode and lower edge electrode produce plasma on the contrary at the edge and the back side of semiconductor wafer.
5, equipment as claimed in claim 2 also comprises:
Be arranged in the lower edge electrode below the semiconductor wafer, wherein annular upper electrode and lower edge electrode produce plasma on the contrary at the edge and the back side of semiconductor wafer.
6, equipment as claimed in claim 4, wherein any one of hearth electrode, solid top electrode and lower edge electrode is negative electrode or anode.
7, equipment as claimed in claim 2 also comprises:
The insulation board that the contiguous solid top electrode that has the gap is therebetween arranged.
8, equipment as claimed in claim 3 also comprises:
The insulation board that the contiguous annular upper electrode that has the gap is therebetween arranged.
9, equipment as claimed in claim 4 also comprises:
Be arranged in the isolator between hearth electrode and the lower limb.
10, equipment as claimed in claim 7, wherein the distance between insulation board and the semiconductor wafer is small enough to prevent basically that the center at semiconductor wafer from forming plasma.
11, as the equipment of claim 10, wherein the distance between insulation board and the semiconductor wafer is small enough to prevent basically that the center at semiconductor wafer from forming plasma.
12, equipment as claimed in claim 7, wherein insulation board comprises projection.
13, as the equipment of claim 12, wherein projection comprises inclined surface and cliff surface, and the cliff surface forms the gap with the solid top electrode.
14, as the equipment of claim 12, projection prevents that basically etchant gasses from flowing to the center of semiconductor wafer.
15, as the equipment of claim 13, the size of the etched area on the clearance control semiconductor wafer wherein.
16, equipment as claimed in claim 7 also comprises:
Additional interchangeable insulation board, each can be adjacent to, and top electrode is arranged and each has the gap of different size betwixt.
17, equipment as claimed in claim 1, wherein said hearth electrode comprises a plurality of open recess.
18, as the equipment of claim 17, wherein a plurality of open recess are straight or crooked.
19, equipment as claimed in claim 4 also comprises:
Be arranged in the top edge electrode on the semiconductor wafer, solid top electrode wherein, lower edge electrode and top edge electrode produce plasma on the contrary at the edge and the back side of semiconductor wafer.
20, as the equipment of claim 19, wherein any one of hearth electrode, top edge electrode, solid top electrode and lower edge electrode is negative electrode or anode.
21, as the equipment of claim 19, also comprise:
The insulation board that the contiguous solid top electrode that has the gap is therebetween arranged.
22, as the equipment of claim 21, wherein the distance between insulation board and the semiconductor wafer is small enough to prevent basically that the center at semiconductor wafer from forming plasma.
23, as the equipment of claim 21, wherein insulation board comprises projection.
24, as the equipment of claim 23, wherein projection comprises inclined surface and cliff surface, and the cliff surface forms the gap with the top edge electrode.
25, as the equipment of claim 23, projection prevents that basically etchant gasses from flowing to the center of semiconductor wafer.
26, as the equipment of claim 24, the size of the etched area on the clearance control semiconductor wafer wherein.
27, as the equipment of claim 21, also comprise:
Additional interchangeable insulation board, each can be adjacent to, and top electrode is arranged and each has the gap of different size betwixt.
28, as the equipment of claim 19, described hearth electrode comprises a plurality of open recess.
29, as the equipment of claim 28, wherein a plurality of open recess are straight or crooked.
30, equipment as claimed in claim 1 also comprises:
Wherein circle electrode in edge is used for producing plasma on the contrary at the edge and the back side of semiconductor wafer.
31, as the equipment of claim 30, also comprise:
Be adjacent to the insulation board of the solid top electrode layout that has the gap therebetween.
32, as the equipment of claim 31, wherein the distance between insulation board and the semiconductor wafer is small enough to prevent basically that the center at semiconductor wafer from forming plasma.
33, as the equipment of claim 32, wherein insulation board comprises projection.
34, as the equipment of claim 33, wherein projection comprises inclined surface and cliff surface, and the cliff surface forms the gap with edge circle electrode.
35, as the equipment of claim 33, projection prevents that basically etchant gasses from flowing to the center of semiconductor wafer.
36, as the equipment of claim 34, the size of the etched area on the clearance control semiconductor wafer wherein.
37, as the equipment of claim 31, also comprise:
Additional interchangeable insulation board, each can be adjacent to, and top electrode is arranged and each has the gap of different size therebetween.
38, as the equipment of claim 30, described hearth electrode comprises a plurality of open recess.
39, as the equipment of claim 38, wherein a plurality of open recess are straight or crooked.
40, a kind of method of etching semiconductor wafer comprises:
Semiconductor wafer is inserted in the chamber;
Increase indoor pressure;
At least a etchant gasses is fed to the chamber, simultaneously further increase pressure;
Provide power supply to the chamber and at the edge of semiconductor wafer circle or back-etching semiconductor wafer;
End power supply and etchant gasses;
With ventilating gas the chamber is ventilated; And
Purify ventilating gas from the chamber.
41, a kind of method of etching semiconductor wafer comprises:
Hearth electrode is arranged in the following as the objective table supporting semiconductor wafers of semiconductor wafer;
At the edge of semiconductor wafer circle or back-etching semiconductor wafer; And
Spacing is about 0.2 to 1.0mm between maintenance semiconductor wafer and the insulation board.
42, a kind of method of etching semiconductor wafer comprises:
The insulation board that will comprise projection is arranged on the semiconductor wafer;
At the edge of semiconductor wafer circle or back-etching semiconductor wafer; And
Keep between semiconductor wafer and the insulation board spacing from 0.2 to about 1.0mm.
43, a kind of method of etching semiconductor wafer comprises:
Hearth electrode is arranged in below the semiconductor wafer, and hearth electrode comprises a plurality of open recess; And
At the edge of semiconductor wafer circle or back-etching semiconductor wafer.
44, a kind of insulation board comprises:
The main body of making by insulating material; And
The projection that comprises inclined surface and cliff surface.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020030033844A KR100585089B1 (en) | 2003-05-27 | 2003-05-27 | Plasma processing apparatus for processing the edge of wafer, insulating plate for plasma processing, bottom electrode for plasma processing, method of plasma processing the edge of wafer and method of fabricating semiconductor device using the same |
| KR33844/2003 | 2003-05-27 | ||
| KR70634/2003 | 2003-10-10 | ||
| KR1020030070634A KR100604826B1 (en) | 2003-10-10 | 2003-10-10 | Plasma processing apparatus for processing the edge of wafer and method of plasma processing thereof |
| US10/762,526 US20040238488A1 (en) | 2003-05-27 | 2004-01-23 | Wafer edge etching apparatus and method |
| US10/762,526 | 2004-01-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1595618A true CN1595618A (en) | 2005-03-16 |
Family
ID=34108610
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200410047417 Pending CN1595618A (en) | 2003-05-27 | 2004-05-27 | Wafer edge etching apparatus and method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2005005701A (en) |
| CN (1) | CN1595618A (en) |
| DE (1) | DE102004024893A1 (en) |
| TW (1) | TWI281713B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102160153A (en) * | 2008-03-14 | 2011-08-17 | 朗姆研究公司 | Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter |
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2004
- 2004-05-19 DE DE200410024893 patent/DE102004024893A1/en not_active Ceased
- 2004-05-26 JP JP2004155918A patent/JP2005005701A/en not_active Withdrawn
- 2004-05-27 CN CN 200410047417 patent/CN1595618A/en active Pending
- 2004-05-27 TW TW93115127A patent/TWI281713B/en not_active IP Right Cessation
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US10629458B2 (en) | 2007-01-26 | 2020-04-21 | Lam Research Corporation | Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter |
| US10811282B2 (en) | 2007-01-26 | 2020-10-20 | Lam Research Corporation | Upper plasma-exclusion-zone rings for a bevel etcher |
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| CN102160153A (en) * | 2008-03-14 | 2011-08-17 | 朗姆研究公司 | Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter |
| CN102160153B (en) * | 2008-03-14 | 2015-03-11 | 朗姆研究公司 | Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter |
| CN101930480B (en) * | 2009-06-19 | 2012-03-07 | 中芯国际集成电路制造(上海)有限公司 | Method for optimizing CMOS imaging sensor layout |
| CN103715049A (en) * | 2012-09-29 | 2014-04-09 | 中微半导体设备(上海)有限公司 | Plasma processing apparatus and method for adjusting process rate of marginal area of substrate |
| CN103715049B (en) * | 2012-09-29 | 2016-05-04 | 中微半导体设备(上海)有限公司 | The method of plasma processing apparatus and adjusting substrate edge region processing procedure speed |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI281713B (en) | 2007-05-21 |
| DE102004024893A1 (en) | 2005-04-14 |
| TW200501256A (en) | 2005-01-01 |
| JP2005005701A (en) | 2005-01-06 |
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