CN107768299A - Bogey and semiconductor processing equipment - Google Patents
Bogey and semiconductor processing equipment Download PDFInfo
- Publication number
- CN107768299A CN107768299A CN201610674985.5A CN201610674985A CN107768299A CN 107768299 A CN107768299 A CN 107768299A CN 201610674985 A CN201610674985 A CN 201610674985A CN 107768299 A CN107768299 A CN 107768299A
- Authority
- CN
- China
- Prior art keywords
- conductive layer
- bogey
- ring body
- cover plate
- connecting portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The present invention provides a kind of bogey and semiconductor processing equipment, and it includes pallet, cover plate and pressure ring, pallet and the common holding chip of cover plate；Pressure ring is used to pallet and cover plate being fixed on chuck.The pressure ring includes the conductive layer and non-conductive layer from bottom to top set gradually, wherein, conductive layer is in contact with the cover plate；Non-conductive layer is used for barrier plasma bombardment induced conductivity layer.Bogey provided by the invention, it can not only improve process uniformity, but also can avoid the occurrence of because pressure ring deform the problem of.
Description
Technical field
The present invention relates to field of semiconductor manufacture, in particular it relates to a kind of bogey and semiconductor processing equipment.
Background technology
Semiconductor processing equipment is the common equipment for processing semiconductor devices, and it is carrying out such as etching, sputtering and chemistry
Vapour deposition etc. is in technical process, general to be supported and fixed wafer using loading attachment, and carries it into reaction chamber
It is processed.In order to improve the production efficiency of semiconductor processing equipment, production cost is reduced, it is typically that multiple chips are simultaneously fixed
On large-sized loading attachment, so as to realize to multiple chips while carry out technique.
Existing bogey includes pallet, metal cover board and ceramic pressure ring.Wherein, pallet is used to carry multiple chips,
Multiple chips are typically distributed on the circumference of tray surface different radii.Metal cover board is used for the marginal zone for pushing down each chip
Domain, so as to secure the wafer on pallet.Pressure ring pushes down metal cover board, the chuck itself and pallet being fixed in reaction chamber
On.When carrying out technique, because metal cover board and wafer surface can produce high temperature, thus general meeting under the shock of plasma
By cooling down chip to helium is passed through between pallet and chip.
In plasma environment, the plasma density that is distributed at conductor edge be present less than being distributed among conductor
The plasma density at place, and the phenomenon for biasing the bias higher than conductor middle at conductor edge, so as to cause conductor
The etch rate of edge is higher than the etch rate of conductor middle, i.e. conductor produces " edge effect ".Based on this, as conductor
Side edge thereof can also produce obvious " edge effect ", this can cause the etch rate of the outer ring chip close to side edge thereof high
In the etch rate of inner ring chip, so as to reduce process uniformity.
Therefore, it is by by the way that above-mentioned ceramic pressure ring is improved into metal pressure ring, due to metal pressure ring to have a kind of solution method
It is in contact with cover plate, this conductor edge for be formed by the two is directed away from the direction extension of outer ring chip, so as to be led by this
The position of " edge effect " caused by body is also directed away from the direction extension of outer ring chip, and then can reduce to wafer engraving speed
The influence of rate.But this there is a problem in that again：Due to metal pressure ring be exposed to plasma environment in, its temperature because
Gradually risen by the bombardment of plasma, metal pressure ring can be deformed after its temperature raises to a certain extent, be led
Cause lower surface uneven, so as to cause cover plate that the deformation such as warpage occurs because of unbalance stress, and then helium leakage may be caused,
Influence is brought to process results.
The content of the invention
It is contemplated that at least solves one of technical problem present in prior art, it is proposed that a kind of bogey and half
Conductor process equipment, it can not only improve process uniformity, but also can avoid the occurrence of because pressure ring deform the problem of.
To realize that the purpose of the present invention provides a kind of bogey, including pallet, cover plate and pressure ring, the pallet and lid
The common holding chip of plate；The pressure ring is used to the pallet and cover plate being fixed on chuck, and the pressure ring is included from bottom to top
The conductive layer and non-conductive layer set gradually, wherein, the conductive layer is in contact with the cover plate；The non-conductive layer is used to hinder
Keep off conductive layer described in plasma bombardment.
Preferably, connecting portion, the connecting portion are provided with the conductive layer surface adjacent with the non-conductive layer
It is embedded in the non-conductive layer.
Preferably, the connecting portion includes the ring body of closure, or is spaced the ring body formed by multiple splits.
Preferably, the internal diameter of the ring body is gradually reduced towards the direction close to the non-conductive layer；Outside the ring body
Footpath gradually subtracts greatly towards the direction close to the non-conductive layer.
Preferably, connecting portion, the connecting portion are provided with the non-conductive layer surface adjacent with the conductive layer
It is embedded in the conductive layer.
Preferably, the connecting portion includes the ring body of closure, or is spaced the ring body formed by multiple splits.
Preferably, the internal diameter of the ring body is gradually reduced towards the direction close to the conductive layer；The external diameter of the ring body
Gradually subtract greatly towards the direction close to the conductive layer.
Preferably, the conductive layer includes aluminium or aluminium alloy.
Preferably, the non-conductive layer includes ceramics or quartz.
As another technical scheme, the present invention also provides a kind of semiconductor processing equipment, and it includes reaction chamber, in institute
State and bogey is provided with reaction chamber, for bearing wafer, the bogey uses above-mentioned carrying provided by the invention
Device.
The invention has the advantages that：
Bogey provided by the invention, its pressure ring use double-decker, i.e. including the conduction from bottom to top set gradually
Layer and non-conductive layer, wherein, the conductive layer positioned at lower floor is in contact with cover plate, and the conductor edge formed by the two is directed away from crystalline substance
The direction extension of piece, so as to which the position of " edge effect " as caused by the conductor is also directed away from the direction extension of chip, and then
The influence to wafer engraving speed can be reduced, so as to improve process uniformity.Non-conductive layer positioned at upper strata can stop
Plasma bombardment conductive layer, so as to avoid conductive layer from being deformed because temperature is too high.
Semiconductor processing equipment provided by the invention, it not only may be used by using above-mentioned bogey provided by the invention
To improve process uniformity, but also can avoid the occurrence of because pressure ring deform the problem of.
Brief description of the drawings
Fig. 1 is the sectional view of bogey provided in an embodiment of the present invention；
Fig. 2 is the enlarged drawing in I regions in Fig. 1.
Embodiment
To make those skilled in the art more fully understand technical scheme, come below in conjunction with the accompanying drawings to the present invention
The bogey and semiconductor processing equipment of offer are described in detail.
Fig. 1 is the sectional view of bogey provided in an embodiment of the present invention.Fig. 2 is the enlarged drawing in I regions in Fig. 1.Please one
And Fig. 1 and Fig. 2 is referred to, bogey includes pallet 1, cover plate 2 and pressure ring 4, wherein, pallet 1 and the common holding chip 3 of cover plate 2,
The two generally use metal material is made, and cooling duct 11 is provided with pallet 1, to defeated between pallet 1 and chip 3
The cooling gas of helium etc. is sent, to avoid the temperature of chip 3 too high.
Pressure ring 4 is used to pallet 1 and cover plate 2 being fixed on chuck (not shown).Pressure ring 4 is included from bottom to top successively
The conductive layer 41 and non-conductive layer 42 of setting, wherein, conductive layer 41 is stacked in the fringe region of the upper surface of cover plate 2, i.e. conductive layer
41 are in contact with cover plate 2.Non-conductive layer 42 covers the whole upper surface of conductive layer 41, is led so as to barrier plasma bombardment
Electric layer 41.Preferably, conductive layer 41 is made using the conductive excellent metal material of aluminium or aluminium alloy etc..Non-conductive layer
42 are made using the nonmetallic materials that deformation is not susceptible under the high temperature resistant and high temperature of ceramics or quartz etc..
By making conductive layer 41 be in contact with cover plate 2, the conductor edge formed by conductive layer 41 and cover plate 2 is directed away from crystalline substance
Direction (that is, the outside at the edge of the cover plate 2) extension of piece 3, so that the position of " edge effect " is also towards remote as caused by the conductor
Direction from chip 3 extends, and then can reduce the influence to wafer engraving speed, so as to improve process uniformity.It is located at
The non-conductive layer 42 on upper strata can barrier plasma bombardment induced conductivity layer, so as to avoid conductive layer 41 from being produced because temperature is too high
Change shape, enters and is deformed without cover plate 2 because of unbalance stress, the problem of causing cooling gas to leak.
In the present embodiment, in the upper surface of conductive layer 41, i.e., it is provided with and is connected on the surface adjacent with non-conductive layer 42
Portion 411, the connecting portion 411 are embedded in non-conductive layer 42, it is achieved thereby that conductive layer 41 and non-conductive layer 42 are fixedly connected.
Preferably, connecting portion 411 includes the ring body of closure, or is spaced the ring body formed by multiple splits.Ring body
Structure can avoid conductive layer 41 and non-conductive layer 42 from the situation of local detachment occur, so as to improve the steadiness of connection.
It is further preferred that the internal diameter of ring body is gradually reduced towards the direction close to non-conductive layer 42, the external diameter court of ring body
Gradually subtract greatly to the direction close to non-conductive layer 42.As shown in Fig. 2 the minimum diameter of ring body is D1, maximum inner diameter D2；Ring body
Maximum outside diameter be D3, minimum outer diameter D4.That is, the width of the cross section of ring body is towards close to the side of non-conductive layer 42
Big to gradually subtracting, this causes the ring body that is embedded in non-conductive layer 42 will not be because gravity or other external force factors are from non-conductive layer 42
Spin off, so as to further improve the steadiness of connection.
As a deformation of above-described embodiment, above-mentioned connecting portion can also be arranged on the lower surface of non-conductive layer 42, i.e.
On the surface adjacent with conductive layer 41, in this case, the connecting portion is embedded in conductive layer 41.It is similar with above-described embodiment
As, connecting portion can equally be the ring body of closure, or be spaced the ring body formed by multiple splits.And it is preferable,
The internal diameter of ring body is gradually reduced towards the direction close to conductive layer 41；The external diameter of ring body is gradual towards the direction close to conductive layer 41
Subtract big.
It should be noted that in actual applications, above-mentioned connecting portion 411 can also use other arbitrary structures, as long as energy
Enough realize being fixedly connected for conductive layer 41 and non-conductive layer 42.
It should also be noted that, in actual applications, conductive layer 41 can also be realized using other any-modes and non-is led
Electric layer 42 is fixedly connected.
As another technical scheme, the embodiment of the present invention also provides a kind of semiconductor processing equipment, and it includes reaction chamber
Room, bogey is provided with reaction chamber, for bearing wafer.The bogey employs provided in an embodiment of the present invention
Above-mentioned bogey.
Semiconductor processing equipment provided in an embodiment of the present invention, it is by using above-mentioned carrying provided in an embodiment of the present invention
Device, can not only improve process uniformity, but also can avoid the occurrence of because pressure ring deform the problem of.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, but the invention is not limited in this.For those skilled in the art, the essence of the present invention is not being departed from
In the case of refreshing and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of bogey, including pallet, cover plate and pressure ring, the common holding chip of pallet and cover plate；The pressure ring is used
It is fixed in by the pallet and cover plate on chuck, it is characterised in that the pressure ring includes the conduction from bottom to top set gradually
Layer and non-conductive layer, wherein,
The conductive layer is in contact with the cover plate；
The non-conductive layer is used for barrier plasma and bombards the conductive layer.
2. bogey according to claim 1, it is characterised in that adjacent with the non-conductive layer in the conductive layer
Connecting portion is provided with surface, the connecting portion is embedded in the non-conductive layer.
3. bogey according to claim 2, it is characterised in that the connecting portion includes the ring body of closure, Huo Zheyou
Multiple splits are spaced the ring body to be formed.
4. bogey according to claim 3, it is characterised in that the internal diameter of the ring body is towards close to described non-conductive
The direction of layer is gradually reduced；The external diameter of the ring body gradually subtracts greatly towards the direction close to the non-conductive layer.
5. bogey according to claim 1, it is characterised in that adjacent with the conductive layer in the non-conductive layer
Connecting portion is provided with surface, the connecting portion is embedded in the conductive layer.
6. bogey according to claim 5, it is characterised in that the connecting portion includes the ring body of closure, Huo Zheyou
Multiple splits are spaced the ring body to be formed.
7. bogey according to claim 6, it is characterised in that the internal diameter of the ring body is towards close to the conductive layer
Direction be gradually reduced；The external diameter of the ring body gradually subtracts greatly towards the direction close to the conductive layer.
8. according to the bogey described in claim 1-7 any one, it is characterised in that the conductive layer includes aluminium or aluminium
Alloy.
9. according to the bogey described in claim 1-7 any one, it is characterised in that the non-conductive layer include ceramics or
Person's quartz.
10. a kind of semiconductor processing equipment, it includes reaction chamber, is provided with bogey in the reaction chamber, is used for
Bearing wafer, it is characterised in that the bogey is using the bogey described in claim 1-9 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610674985.5A CN107768299A (en) | 2016-08-16 | 2016-08-16 | Bogey and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610674985.5A CN107768299A (en) | 2016-08-16 | 2016-08-16 | Bogey and semiconductor processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107768299A true CN107768299A (en) | 2018-03-06 |
Family
ID=61259620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610674985.5A Pending CN107768299A (en) | 2016-08-16 | 2016-08-16 | Bogey and semiconductor processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107768299A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113471134A (en) * | 2021-06-28 | 2021-10-01 | 北京北方华创微电子装备有限公司 | Tray structure of semiconductor equipment and semiconductor equipment |
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| CN103715049A (en) * | 2012-09-29 | 2014-04-09 | 中微半导体设备(上海)有限公司 | Plasma processing apparatus and method for adjusting process rate of marginal area of substrate |
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| CN204905227U (en) * | 2015-07-16 | 2015-12-23 | 海迪科（南通）光电科技有限公司 | Split type PSS sculpture tray tool |
| CN105506570A (en) * | 2014-10-16 | 2016-04-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Compression ring component and physical vapor deposition equipment |
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Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080106842A1 (en) * | 2006-11-06 | 2008-05-08 | Tokyo Electron Limited | Mounting device, plasma processing apparatus and plasma processing method |
| CN102106191A (en) * | 2008-07-23 | 2011-06-22 | 应用材料公司 | Workpiece support for a plasma reactor with controlled apportionment of RF power to a process kit ring |
| KR20100073025A (en) * | 2008-12-22 | 2010-07-01 | 한국전자통신연구원 | Method for dechucking a substrate in plasma processing apparatus |
| CN202585324U (en) * | 2011-12-30 | 2012-12-05 | 中微半导体设备(上海)有限公司 | Plasma processing device, gathering device and electrostatic chuck thereof |
| CN103715049A (en) * | 2012-09-29 | 2014-04-09 | 中微半导体设备(上海)有限公司 | Plasma processing apparatus and method for adjusting process rate of marginal area of substrate |
| US20150116689A1 (en) * | 2013-10-31 | 2015-04-30 | Semes Co., Ltd. | Support unit and substrate treating device including the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113471134A (en) * | 2021-06-28 | 2021-10-01 | 北京北方华创微电子装备有限公司 | Tray structure of semiconductor equipment and semiconductor equipment |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180306 |