TWI692796B - Mounting table and plasma processing device - Google Patents

Abstract

With focus ring (6) for plasma treatment In the mounting table (2), the cutting of the focus ring (6) due to the electric field in the vertical direction is suppressed, and particles are reduced.

Set the body (2) of the mounting table on which the glass substrate (G) is placed It has a flat cylindrical structure from the side peripheral surface, and the side portion is provided below the focus ring (6) so as to surround the stage body (2) and contact the side peripheral surface of the stage body (2) Insulation member (31). Therefore, since there is no stage body (2) directly under the focus ring (6), no vertical electric field is generated in the focus ring (6), and the cutting of the focus ring (6) can be suppressed go with. Furthermore, the side insulating member (31) is crimped to the side peripheral surface of the lower electrode (20), the auxiliary insulating member (32) is crimped to the insulating spacer member (28), and the side insulating member (31) ) The gap with the auxiliary insulating member (32) is set to a labyrinth structure, whereby abnormal discharge can be suppressed.

Description

Mounting table and plasma processing device

The present invention relates to a mounting table and a plasma processing device used when plasma processing a substrate.

In the manufacturing process of forming a semiconductor circuit on a glass substrate or a semiconductor wafer, there is a process of using plasma to perform an etching process or a film forming process. This process is carried out by placing a substrate on a mounting table in a vacuum container, applying high-frequency energy to the processing gas supplied to the space above the mounting table, and generating, for example, capacitively coupled plasma or induction Coupling plasma. When the mounting table is a capacitively coupled plasma, the lower electrode constitutes one of the electrodes of the parallel plate. When the mounting table is an inductively coupled plasma, the lower electrode is applied with a bias voltage for introducing ions. In the plasma processing apparatus performing such a process, in order to adjust the state of the plasma, a ring-shaped member is provided so as to surround the mounting table.

As the material of the ring-shaped member, any one of conductivity and insulation is selected according to the type of manufacturing process or device configuration, etc. For example, a ring member made of an insulating material called a focus ring or the like is used to seal the plasma to be spread out of the mounting table, for example, on the substrate. About Ring Structure The mounting structure of the component is as described in Patent Document 1. A step corresponding to the thickness of the ring member is provided on the outer peripheral portion of the mounting table, and a flange portion is formed to surround the mounting table, and the ring member is fixed to The surface of the flange portion.

However, because the electrode is located on the lower side of the ring member, it is unavoidable to generate a strong electric field in the vertical direction in the ring member. Therefore, the ions in the plasma will collide with the ring member, causing the surface of the ring member to be cut off, resulting in particle contamination One of the reasons. In order to weaken the electric field in the vertical direction, although the material of the ring member is considered, it is difficult to substantially reduce the occurrence of the electric field and reduce the particles.

Patent Document 2 discloses a mounting table that does not include a flange portion, but plasma may invade between the ring member and the outer peripheral surface of the electrode to cause abnormal discharge on the outer peripheral surface of the electrode, or a ring material The width becomes larger and the vacuum container becomes larger.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Application Publication No. 2007-273685

[Patent Document 2] Japanese Unexamined Patent Publication No. 2013-157640

The present invention is carried out in consideration of such circumstances, and its purpose is to provide a technology as follows: it can be suppressed in the mounting table The particles are reduced due to the removal of the ring member due to the electric field in the vertical direction. The stage is equipped with a stage body on which a substrate is used for plasma processing and an insulation surrounding the stage body Ring member made of wood.

The mounting table of the present invention is provided to mount the substrate in a vacuum container for plasma processing of the substrate. The mounting table is characterized by comprising: a metal mounting table body on which the substrate is mounted , The side surface from the top to the bottom has a flat column shape; the ring member, whose upper surface faces the plasma processing space, and is composed of an insulating material provided to surround the mounting table body; and the side insulating member, in the ring The lower side of the member is provided so as to surround the main body of the mounting table, and is pressure-contacted to the side peripheral surface of the main body of the mounting table.

The plasma processing apparatus of the present invention is characterized by comprising: the above-mentioned mounting table, which is installed in a vacuum container; a gas supply unit, which supplies processing gas for plasmaization into the vacuum container; and a plasma generation unit , Used to generate an electric field in the vacuum container, so that the process gas plasma.

The present invention is configured as follows: the mounting table body on which the substrate is mounted has a flat columnar structure from the upper side to the lower side, and the lower side of the ring member surrounds the mounting table The body is provided with side insulating members in a manner of being crimped to the side peripheral surface of the mounting table body. Therefore, since there is no stage body directly under the ring member, a vertical electric field is not generated in the ring member, and the ring member can be prevented from being cut off. In addition, since the side insulating member is crimped to the side peripheral surface of the mounting body at the lower side of the ring member, it is also possible to suppress the defect that plasma enters the side peripheral surface of the mounting body and causes abnormal discharge. Situation.

2‧‧‧Mounting table body

3‧‧‧Insulator

6‧‧‧focus ring

10‧‧‧Handling container

20、100‧‧‧Lower electrode

21‧‧‧Melting film

25‧‧‧ Heat transfer gas diffusion plate

28‧‧‧Insulation spacer member

31‧‧‧Side insulation member

32‧‧‧Subsidiary insulation components

35、36‧‧‧screw

G‧‧‧Glass substrate

[Fig. 1] A cross-sectional view of a plasma processing apparatus according to an embodiment of the present invention.

[Fig. 2] An enlarged cross-sectional view of a part of the mounting table.

[Fig. 3] A plan view showing an insulator and a lower electrode.

[Fig. 4] A cross-sectional view and a plan view showing a side insulating member.

[Fig. 5] An explanatory diagram showing the direction of an electric field formed by a conventional mounting table.

[Fig. 6] An explanatory diagram showing the direction of an electric field formed by a mounting table according to an embodiment of the present invention.

[Fig. 7] An explanatory diagram illustrating the flow of discharge in the mounting table.

[Fig. 8] A cross section of a mounting table showing another example of the embodiment of the present invention Face map.

The plasma processing apparatus using the substrate mounting table of the embodiment of the present invention will be described. As shown in FIG. 1, the plasma processing apparatus includes a processing container 10 made of aluminum or stainless steel that is grounded. On the side of the processing container 10, a loading/unloading outlet 11 for receiving a plasma-processed substrate, for example, a rectangular glass substrate G is provided, and a gate valve 13 for opening and closing the loading/unloading outlet is provided at the loading/unloading outlet 11.

At the central portion of the bottom surface of the processing container 10, there is provided a stage main body 2 having a rectangular planar shape on which the glass substrate G is placed and a flat prismatic side surface from the upper surface to the lower surface. The stage body 2 is configured in this example to be laminated with: a lower electrode 20, which is equivalent to the electrode on the lower side of the parallel plate electrode; and a heat transfer gas diffusion plate 25, made of a metal provided below the lower electrode 20 For example made of aluminum. In addition, the heat transfer gas diffusion plate 25 may also be referred to as a lower electrode on the lower layer side.

The lower electrode 20 is composed of a metal block, and the metal block is composed of, for example, aluminum. As shown in FIG. 2, on the upper surface of the lower electrode 20, an electrostatic jig 200 that holds the glass substrate G with an electrostatic attraction force is provided. The electrostatic attraction force is buried in the insulating spray film 21 and connected to a DC power source. The jig 202 is composed of a box-shaped electrode 201. Therefore, the lower electrode 20 can also be said to be an electrostatic jig unit. In the subsequent drawings of FIG. 3, the description of the electrode 201 and the DC power supply 202 is omitted.

The lower electrode 20 is connected via a matching device 94 to a high-frequency power source 93 for forming an electric field for plasma generation in the processing container 10. The high-frequency power supply is configured to output a relatively high frequency, for example, a high frequency of 13.56 MHz. In addition, a high-frequency power supply 95 for RF bias is electrically connected to the lower electrode 20 via a matching device 96. The high-frequency power supply 95 is configured to output a frequency suitable for controlling the energy of ions introduced into the glass substrate G, for example, a high frequency of 1 to 6 MHz.

Inside the lower electrode 20, for example, an annular cooler flow path 22 extending in the circumferential direction is provided. In the cooler flow path 22, a heat transfer medium such as Gulden (registered trademark) of a predetermined temperature is circulated and supplied by a quencher unit (not shown), and the temperature of the heat transfer medium can be used to control the glass substrate on the electrostatic fixture G treatment temperature. In addition, on the upper surface of the lower electrode 20, the upper end of the gas supply path 24 provided inside the lower electrode 20 is opened, and heat transfer gas such as He gas can be supplied to the upper surface of the lower electrode 20 and the back surface of the glass substrate G between. The heat transfer gas is a gas for transferring the heat of the lower electrode 20 to the glass substrate G.

The heat transfer gas diffusion plate 25 is provided with a flow path 18 communicating with the lower end of the gas supply path 24 of the lower electrode 20, and the flow path 18 is connected with piping of the heat transfer gas. Between the peripheral edge portion of the upper surface of the heat transfer gas diffusion plate 25 and the lower electrode 20 and between the peripheral edge portion of the lower surface of the heat transfer gas diffusion plate 25 and the insulating spacer member 28 described later, a sealing member, O, is interposed.形环90,91. In addition, in the drawings after FIG. 3, the description of the O-rings 90 and 91 is omitted.

In addition, the lower electrode 20 is provided so as to penetrate between the lower electrode 20 and the heat transfer gas diffusion plate 25 in the vertical direction and protrude/submerge from the surface of the lower electrode 20. The lifting pins (not shown) of the glass substrate G are given.

On the lower surface side of the heat transfer gas diffusion plate 25, a lower electrode 20 and a support column 26 composed of a plurality of cylindrical insulators supporting the heat transfer gas diffusion plate 25 are provided. A through hole is provided in the center of the support column 26, and the lower electrode 20 penetrates the bottom surface from the lower surface side of the processing container 10 and is fixed by a screw 27 inserted into the through hole.

In addition, on the bottom surface of the processing container 10, an insulating spacer member 28 that is a supporting member that supports the peripheral portion of the lower electrode 20 along the entire circumference is provided. Between the insulating spacer member 28 and the bottom surface of the processing container 10, an O-ring 92 formed as a sealing member for hermetically sealing is provided. Therefore, a space with an airtight atmosphere is formed between the lower side of the mounting table body 2 and the processing container 10 and the bottom surface.

When the electric field is formed in the processing container 10 around the mounting table body 2, the height of the lower surface of the lower electrode 20 along the lower surface of the heat transfer gas diffusion plate 25 is provided to prevent the mounting table Insulator 3 of abnormal discharge in the side peripheral surface of the body 2. FIG. 2 is an enlarged cross-sectional view of the insulator 3; FIG. 3(a) is a plan view showing the side insulating member 31; and (b) is a plan view showing the auxiliary insulating member 32. As shown in FIGS. 2 and 3, the insulator 3 is formed into a quadrangular ring shape that surrounds the side circumference of the mounting table body 2 along the entire circumference, and is composed of a side insulating member 31 and a supplementary insulating member 32. Insulation member 31. The auxiliary insulating member 32 constitutes a portion near the inner side of the insulator 3, that is, the side contacting the lower electrode 20, and the auxiliary insulating member 32 constitutes the outer side of the side insulating member 31.

The side insulating member 31 is formed as a flat surface in contact with the lower electrode 20 and the heat transfer gas diffusion plate 25. In addition, the surface in contact with the auxiliary insulating member 32 on the side opposite to the surface in contact with the lower electrode 20 and the heat transfer gas diffusion plate 25 of the side insulating member 31 is formed continuously vertically from the upper side in order The first surface 38, the horizontal second surface 39 from the lower edge of the first surface 38 toward the inside (the stage body 2 side), and the third surface vertically extending downward from the inner edge of the second surface 39 40.

The side insulating member 31 is composed of, for example, four L-shaped members 4 whose corners are located at positions corresponding to the corners of the mounting table body 2 as shown in FIG. 3( a ). As shown in FIG. 4, each L-shaped member 4 is not flat at both ends, and is formed in a stepped shape when viewed from above. The end faces of the L-shaped members 4 adjacent to each other are set to be engaged with each other. shape. Furthermore, at normal temperature (25° C.), four L-shaped members 4 are combined to form an annular side insulating member 31 so that a gap can be formed in the longitudinal direction.

The side insulating member 31 is provided with screw holes 33 and 34 that penetrate from the first vertical surface 38 of the outer peripheral surface to the inner peripheral surface that is in contact with the lower electrode 20. The screw hole 33 is formed when the screw 35 is screwed, the L-shaped member 4 is fixed in all directions, and the screw hole 34 is screwed by the screw 35 to make the L-shaped The member 4 is movable in the longitudinal direction, and is formed as Long hole. Regarding the arrangement of the screw holes 33 and the screw holes 34, for example, the screw holes 33 are provided at the positions closest to the corners of the L-shaped member 4 and spaced from the screw holes 33 toward the end surface of the L-shaped member 4 A plurality or one screw hole 34 is provided. The side insulating member 31 is fixed to the side peripheral surface of the lower electrode 20 by crimping, for example, a metal screw 35 inserted into each screw hole 33, 34. Therefore, even when the L-shaped member 4 expands and contracts in the longitudinal direction due to temperature changes, the fixed portion of the screw 35 or the strain of each L-shaped member 4 can be suppressed. In each screw hole 33, 34, a cover part made of, for example, the same material as the side insulating member 31 is closely provided via an O-ring 301 which is a sealing material so as to cover the head of the screw 35 300. In addition, as a structure for closely fitting (fitting) the cover portion 300 to each screw hole, the O-ring 301 is not limited to the structure, and the cover portion 300 may be screwed into the screw hole 33, for example. In addition, the screw 35 may be made of an insulating material such as ceramics. In this case, the cover 300 may not be provided.

When the auxiliary insulating member 32 is described, the inner side surface of the auxiliary insulating member 32 on the side insulating member 31 side is formed into a shape corresponding to the outer side surface of the side insulating member 31 on the side of the auxiliary insulating member 32 side. That is, the vertical surface that is in contact with the vertical first surface 38 of the side insulating member 31, the horizontal surface that is in contact with the horizontal second surface 39, and the vertical surface that is in contact with the third surface are from The upper part continuously forms a stepped structure. The insulator 3 having a rectangular cross section is formed in such a manner that the side insulating member 31 is embedded on the inner side of the auxiliary insulating member 32, and the surface where the side insulating member 31 and the auxiliary insulating member 32 are in contact is formed Curvy for halfway Path structure.

As shown in FIG. 3(b), as shown in FIG. 3(b), the relationship auxiliary insulating member 32 is composed of four L-shaped members 5 in a stepped shape, as shown in FIG. 3(b). For example, at normal temperature (25° C.), four L-shaped members 5 are combined to form a ring-shaped auxiliary insulating member 32 so that a gap can be formed in the longitudinal direction. As shown in FIG. 2, the auxiliary insulating member 32 is provided with a screw hole 37 penetrating downward from a horizontal surface that contacts the horizontal second surface 39 of the side insulating member 31. The screw holes 37, like the screw holes 33 and 34 in the side insulating member 31, include: screw holes, and the auxiliary insulating member 32 is fixed in all directions by screwing; and the screw holes are After screwing, the L-shaped member 5 is formed as a long hole so as to be movable in the longitudinal direction. For convenience, these screw holes are collectively referred to as 37. The arrangement of the screw holes in the lateral direction (longitudinal direction) is the same as the screw holes 33 and 34 in the side insulating member 31. Furthermore, the auxiliary insulating member 32 is crimped to the insulating spacer member 28 by, for example, a metal screw 36 inserted into each screw hole 37. In addition, the screw 36 may be composed of an insulating material such as ceramics.

In order to avoid complicating the description, the side insulating member 31 and the auxiliary insulating member 32 are both divided into four, but in a specific example of the structure, it is also composed of a combination of linear members, for example, the number of divisions, There are more than 4 departments. In addition, for example, in the divided body of the side insulating member 31 and the divided body of the auxiliary insulating member 32, the joint position of the divided bodies adjacent to each other is set to a predetermined position. Moreover, by making the side insulating member The screw holes 33, 34 of the 31 and the screw holes 37 of the auxiliary insulating member 32 are moved in the longitudinal direction, as described above, the side insulating member 31 and the auxiliary insulating member are assembled in the state of being screwed 32. In addition, for example, the position of the auxiliary insulating member 32 is set in advance, and even if the assembly in which the side insulating member 31 is crimped to the mounting table body 2 is inserted into the area surrounded by the auxiliary insulating member 32, the mounting table can be assembled.

The upper surface of the insulator 3, that is, the upper surfaces of the side insulating member 31 and the auxiliary insulating member 32, spans these upper surfaces, and is provided with an insulating material such as an alumina sintered body that surrounds the lower electrode 20 in a ring shape The ring member is the focus ring 6. Moreover, the outer peripheral insulating member 60 made of the same material as the focus ring 6 is covered from the outer surface of the insulator 3 along the outer surface of the insulating spacer member 28 and along the entire circumference of the stage body 2, for example.

On the upper surface of the processing container 10, a shower head 7 is provided. The shower head 7 is provided with a shower plate 70 formed with a plurality of gas supply holes 71 so as to face the mounting surface of the mounting table body 2. Above the shower plate 70, a downstream end of the processing gas supply pipe 74 is connected via a gas dispersion chamber 72. The processing gas supply pipe 74 is provided with a processing gas supply source 75, a flow rate adjusting section 76, and a valve 77 in this order from the upstream side. The shower head 7 is grounded, and is used together with the lower electrode 20 as an upper electrode configured as a pair of parallel plate electrodes formed as a plasma generating portion. Therefore, the lower electrode 20, the shower head 7, the matching device 94, and the high-frequency power supply correspond to the plasma generating section.

In addition, the bottom surface of the processing container 10 is tied to its edge A plurality of exhaust ports 15 that are open at regular intervals are formed, and each exhaust port 15 is provided with a vacuum exhaust unit 17 via an exhaust pipe 16.

Next, the operation of the plasma processing apparatus will be described using, for example, an etching process. When the plasma processing apparatus is in operation, the glass substrate G to be processed is placed on the lower electrode 20 by the cooperative action of the external transfer arm and the lift pins. Next, after the gate valve 13 is closed, the heat transfer gas is supplied between the lower electrode 20 and the glass substrate G, and the attraction of the electrostatic jig is started to hold the glass substrate G.

Next, a processing gas containing an etching gas such as CF ₄ or Cl _{2 is} supplied from the shower head 7 into the processing container 10, and vacuum exhaust is performed from the exhaust port 15 to adjust the pressure in the processing container 10 to a predetermined pressure . Thereafter, high-frequency power for plasma generation is applied from the high-frequency power supply 93 to the body of the lower electrode 20 via the matching device 94, and a high-frequency electric field is generated between the lower electrode 20 and the shower head 7. The processing gas supplied into the processing container 10 is excited by a high-frequency electric field generated between the lower electrode 20 and the shower head 7 to generate a plasma of the processing gas. Further, the ions contained in the plasma are attracted from the high-frequency power supply 95 to the lower electrode 20, and the film to be processed of the glass substrate G is etched.

Since the focusing ring 6 made of an insulating material is provided around the mounting table body 2, the plasma around the mounting table body 2 is focused on the mounting table body 2 side, thereby suppressing the glass substrate The plasma density in the periphery of G decreases. FIG. 5 shows a conventional structure in which a flange 81 is formed on the stage body 2, but in this case, a flange 81 that is a metal body exists below the focus ring 6. Therefore, focus ring 6 The surface will be exposed to a strong electric field in the vertical direction, and you must worry about being cut off by the active species in the plasma. Therefore, in the figure, 82 is a screw for fixing the focus ring 6 and the lower electrode 80, and 83 is a cover covering the head of the screw 82 for fixing the focus ring 6.

On the other hand, in the above-mentioned embodiment, as shown in FIGS. 1 and 2, it is configured as follows: the side peripheral surface of the stage body 2 including the lower electrode 20 is flattened from the top to the bottom Surface, no flange is provided. Therefore, as shown in FIG. 6, it is difficult to form a strong electric field in the vertical direction on the surface of the focus ring 6, which can suppress the collision of the active species in the plasma on the surface of the focus ring 6 and suppress the removal of the focus ring 6 , Which can suppress the generation of particles. Furthermore, since the electric field in the vertical direction with respect to the focus ring 6 can be suppressed, the power loss can be reduced.

The advantages of the side insulating member 31 and the auxiliary insulating member 32 will be further described. The outer surface of the lower electrode 20, that is, the electrostatic jig unit, is covered by the spray film 21, but the outer surface of the heat transfer gas diffusion plate 25 stacked under the lower electrode 20 is not covered by the spray film 21. The metal surface will be exposed or processed with alumite. Therefore, the plasma is intended to face the outer peripheral surface of the heat transfer gas diffusion plate 25. The thick line shown in FIG. 7 indicates the path of the plasma toward the outer peripheral surface of the heat transfer gas diffusion plate 25.

The shorter the path, the easier the plasma enters. Therefore, the path where the plasma is most likely to enter is the path P1 which is the gap between the side insulating member 31 and the lower electrode 20. However, since the side insulating member 31 is crimped to the side peripheral surface of the lower electrode 20, it is difficult to see the outer peripheral surface of the heat transfer gas diffusion plate 25 from the plasma space through the path P1. Therefore, plasma, Although it is intended to pass the path P2 toward the heat transfer gas diffusion plate 25 from between the focus ring 6 and the lower electrode 20 or the outer peripheral insulating member 60, through the side insulating member 31 and the auxiliary insulating member 32, the side insulating Since the member 31 and the auxiliary insulating member 32 are formed in a labyrinth structure, the heat transfer gas diffusion plate 25 cannot be seen from the plasma space even in this path P2.

Also, the path P3 from the focus ring 6 and the outer peripheral insulating member 60 to the heat transfer gas diffusion plate 25 along the surface between the outer peripheral insulating member 60 and the auxiliary insulating member 32 and the surface of the insulating spacer member 28 is also due to the auxiliary The insulating member 32 is crimped to the insulating spacer member 28 by the screw 36, so that the plasma becomes difficult to invade. Therefore, it is possible to suppress the occurrence of abnormal discharge on the outer peripheral surface of the heat transfer gas diffusion plate 25 where the spray film 21 is not formed.

The above-described embodiment is configured as follows: the stage body 2 on which the glass substrate G is placed is configured to have a flat columnar structure from the upper surface to the lower surface, and is located below the focus ring 6 A side insulating member 31 is provided so as to surround the mounting table body 2 and be pressure-contacted to the side peripheral surface of the mounting table body 2. Therefore, since the stage body 2 does not exist directly under the focus ring 6, the vertical electric field is not generated at the focus ring 6, and the cutting of the focus ring 6 can be suppressed. Furthermore, the side insulating member 31 is crimped to the side peripheral surface of the lower electrode 20, the auxiliary insulating member 32 is crimped to the insulating spacer member 28, and the gap between the side insulating member 31 and the auxiliary insulating member 32 is set to Labyrinth structure. Therefore, the heat transfer gas diffusion plate 25 below the lower electrode 20 can be suppressed Abnormal discharge.

In addition, a concave portion and a convex portion that are engaged with each other may be provided on the lower surface side of the focus ring 6 and the upper surface side of the insulator 3 or the outer peripheral insulating member 60 so that the focus ring 6 is engaged with the insulator 3 or the outer peripheral insulating member 60 and To be fixed.

In addition, as another example of the embodiment of the present invention, the mounting table is not limited to providing a cooler flow path, which is a temperature control flow path, in the electrostatic clamp unit, which is the lower electrode 20, as shown in the aforementioned embodiment. For example, as shown in FIG. 8, the configuration may be such that the lower electrode 100 on the upper layer side, that is, the electrostatic jig unit, is not provided with a cooler channel, and the lower electrode 101 on the lower layer side is provided with a cooler channel 102. In this case, the lower electrode 100 on the upper layer side is made of, for example, SUS (stainless steel), and the lower electrode 101 on the lower layer side is made of, for example, aluminum. In the case of such a configuration, the same effect as the aforementioned embodiment can be obtained, and abnormal discharge in the lower electrode 101 on the lower layer side can be suppressed.

In addition, a concave portion having an opening that is circular and enlarged on the rear side may be provided on the outer peripheral surface of the lower electrode 20, and a convex portion having a shape corresponding to the concave portion may be provided on the side insulating member 31 to be fitted and pressed against each other. In this case, a spring having an elastic force is provided in the circumferential direction so that the opening faces the rear part of the recess, and the convex portion is inserted to expand the spring in the recess, whereby the side insulating member 31 is formed It is in a state of being crimped to the lower electrode 20.

Moreover, the mounting table body 2 is not limited to a corner post, and may be a column. Moreover, when the side peripheral surface of the mounting table body 2 is flat, it does not mean The meaning of only a completely flat surface is included in the meaning of "flat surface" even if it has a slight unevenness to the extent that the effect of the present invention is substantially obtained, or even if it is slightly inclined.

Furthermore, the plasma processing apparatus of the present invention is not limited to the parallel flat plate type, and can also be applied to an ICP (Inductive Coupled Plasma) plasma processing apparatus. The ICP plasma processing apparatus is provided with a process gas, for example, by The electric field and the magnetic field induced by the antenna provided on the top of the vacuum vessel in the manner of supplying high-frequency power generate plasma. That is, the plasma is not limited to the capacitive coupling type, but may also be an inductive coupling type. In addition, the plasma treatment is not limited to etching, and may be a plasma film-forming treatment for forming a film on a substrate. Furthermore, it is not limited that the mounting table body 2 is an electrode, and for example, in an induction plasma processing apparatus, even if it is a metal column not connected to a power source, the effect of the present invention can be obtained.

In addition, although the side insulating member 31 and the auxiliary insulating member 32 are configured to combine the L-shaped members 4 and 5, respectively, a linear configuration may be combined. In this case, as described above, it may be configured to combine the screw hole that can move the screw in all directions and the screw hole that can move in the longitudinal direction, and absorb the side insulating member 31 and the auxiliary insulating member 32 The respective thermal expansion.

Moreover, it is not limited to a plasma processing apparatus that performs plasma processing on the glass substrate G, but may also be a plasma processing apparatus that performs plasma processing on a wafer-shaped wafer having a diameter of 300 mm, for example.

2‧‧‧Mounting table body

3‧‧‧Insulator

6‧‧‧focus ring

10‧‧‧Handling container

20‧‧‧Lower electrode

21‧‧‧Melting film

25‧‧‧ Heat transfer gas diffusion plate

28‧‧‧Insulation spacer member

31‧‧‧Side insulation member

32‧‧‧Subsidiary insulation components

34‧‧‧Screw hole

35‧‧‧screw

36‧‧‧screw

37‧‧‧Screw hole

38‧‧‧ Face 1

39‧‧‧The second side

40‧‧‧3rd

60‧‧‧Peripheral insulating member

90‧‧‧O-ring

91‧‧‧O-ring

92‧‧‧O-ring

200‧‧‧Static fixture

201‧‧‧electrode

202‧‧‧DC power supply

300‧‧‧Cap

301‧‧‧O-ring

Claims (10)

A mounting table is provided for mounting the substrate in a vacuum container for plasma processing of the substrate. The mounting table is characterized by comprising: a metal mounting table body on which the substrate is mounted, and It is columnar; the ring member, whose upper surface faces the plasma processing space where the plasma treatment is performed, and is composed of an insulating material provided to surround the mounting table body; and a side insulating member, below the ring member, It is installed so as to surround the main body of the mounting table, and is pressure-bonded to the side peripheral surface of the main body of the mounting table. A mounting table as claimed in item 1 of the patent application, wherein the main body of the mounting table is flat from the upper surface to the lower surface. According to the mounting table of claim 1 or 2, the side insulating member is fastened from the outer peripheral surface side to the side peripheral surface of the mounting table body by a screw member. A mounting table as claimed in item 3 of the patent scope, wherein the screw member is made of metal, the head of the screw member is a screw hole arranged in the side insulating member, and the screw hole is covered by an insulating material The Ministry will be covered. For example, the mounting table of item 3 of the patent application scope, wherein the aforementioned screw member is an insulating material. A mounting table as claimed in item 4 of the patent scope, in which the outer peripheral surface of the side insulating member is in surface contact with the outer periphery In the surface observation, the auxiliary insulating member is provided so that the arrangement area of the screw member cannot be directly seen. A mounting table according to item 6 of the patent application scope, wherein the gap between the side insulating member and the auxiliary insulating member is formed so as to form a labyrinth when viewed from the plasma processing space. A mounting table as claimed in item 7 of the patent scope, wherein the outer peripheral surface of the side insulating member is provided with a first surface which is formed in parallel with the side peripheral surface of the mounting table body sequentially from the upper side, The second surface perpendicular to the side peripheral surface, the third surface parallel to the side peripheral surface, and the first surface are located outside the second surface. The auxiliary insulating member is contacted from the surface by a screw member The surface of the second surface is fastened toward the supporting member that supports the auxiliary insulating member from below. A mounting table as claimed in item 1 or 2 of the patent application, wherein the upper side of the main body of the mounting table is constituted by an electrostatic jig, and the upper surface and side peripheral surfaces are covered with an insulating spray film , The surface of the side insulating member that is crimped to the side peripheral surface of the mounting table body is from a part covered by the melt-spraying film, along a part that is not covered by the melt-spraying film and is located below the part extend. A plasma processing apparatus, characterized in that it is provided with: a mounting table according to any one of patent application items 1 to 9, which is installed in a vacuum container; and a gas supply unit which supplies plasma for the inside of the vacuum container Process gas; and The plasma generating part is used to generate an electric field in the vacuum container to plasmaize the processing gas.

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