TWI549221B - Electrostatic fixture - Google Patents

Description

Static fixture

The present invention relates to an electrostatic chuck in which a substrate mounting surface is formed on a substrate mounting table on which a substrate is placed in a processing chamber of a substrate processing apparatus.

In a process of an FPD (Flat Panel Display) including a liquid crystal display device (LCD), a substrate processing apparatus that applies plasma treatment to various substrates including a glass substrate is known.

The substrate processing apparatus includes a substrate mounting table that supports a glass substrate (hereinafter simply referred to as a "substrate") in a processing chamber (hereinafter referred to as a "chamber"), and an upper electrode that is separated from the substrate mounting table. The processing space is used to face the aligner; the high-frequency electric power (RF) for plasma generation is applied to the substrate stage that functions as the lower electrode, and the plasma is introduced into the processing space to generate plasma, and the generated plasma is used. The substrate placed on the substrate mounting surface of the substrate stage is subjected to a predetermined plasma treatment.

The electrostatic chuck structure forming the substrate mounting surface of the substrate mounting table generally includes mainly an aluminum oxide (Al ₂ O ₃ ) layer as an insulating layer forming an upper layer and a lower layer, and an upper layer and a lower layer formed on the aluminum oxide layer. Between the electrostatic electrode plates. Therefore, when the substrate is subjected to plasma treatment, the substrate is placed on the upper surface of the electrostatic chuck made of alumina, and the aluminum oxide layer is in contact with the inner surface of the substrate.

Here, since the glass and the alumina are separated by the electrification column, when the substrate made of the glass is lifted from the electrostatic chuck, the substrate is easily peeled off and charged, and the substrate is negatively charged by peeling and charging. The circuit element formed on the surface of the substrate is destroyed by electrostatic static discharge or the contaminant such as particles is adsorbed on the surface of the substrate due to the negative electric charge generated on the substrate. In addition, due to The substrate made of glass is placed on the aluminum oxide layer, and the inner surface of the substrate is damaged due to the difference in hardness between the two.

As a technique for preventing such damage to a substrate placed on a substrate mounting table and adhesion of a contaminant to a substrate, for example, an electrostatic chuck in which an upper electrode layer and a lower layer are formed by a glass layer and an electrostatic electrode plate is disposed therebetween is known (see, for example, "Patent Document 1").

Prior technical literature

Patent Document 1 Japanese Patent Laid-Open Publication No. 2009-032718

However, such an electrostatic chuck in which the upper layer and the lower layer are formed by a glass layer is substantially changed from the conventional constituent material, and it is difficult to maintain the same withstand voltage performance as in the case of forming an aluminum oxide layer of the conventional product, and the glass is Since it is corroded by a fluorine-containing gas, it is difficult to ensure the resistance of the electrostatic chuck to fluorine-containing gas.

An object of the present invention is to provide an electrostatic chuck which can prevent damage to a circuit component formed on a surface of a substrate and adhesion of a contaminant to the substrate and can prevent damage to the inner surface of the substrate, and can be easily applied even to a device that has been installed.

In order to solve the above problems, the electrostatic chuck of the first aspect of the invention is in a processing chamber of a substrate processing apparatus, and a substrate mounting surface is formed on a substrate mounting table on which the substrate is placed; A film layer which is made of the same material as the constituent material of the inner surface of the substrate and which is in contact with the inner surface of the substrate is formed.

An electrostatic chuck according to the second aspect of the invention is the electrostatic chuck of the first aspect of the invention, wherein the substrate mounting surface is formed with an outer peripheral portion and an island portion existing in a region surrounded by the outer peripheral portion. An embossed structure of the protruding portion; the film layer is formed on the outer peripheral portion.

The electrostatic chuck of the third application of the patent scope is in the electrostatic chuck of claim 2, and the film layer is further formed on the island portion.

The electrostatic chuck of claim 4 is the electrostatic chuck of claim 2, wherein the embossed structure causes the substrate mounting surface to protrude to form a protrusion, and the film is formed on the protrusion. The winner of the layer.

The electrostatic chuck of claim 5 is the electrostatic chuck of claim 3, wherein the embossed structure causes the substrate mounting surface to protrude to form a protrusion, and the film is formed on the protrusion. The winner of the layer.

The electrostatic chuck of claim 6 is the electrostatic chuck of claim 2, wherein the embossed structure sets the substrate mounting surface to a plane, and forms the coating layer on the plane. The winner of the protrusion.

The electrostatic chuck of claim 7 is the electrostatic chuck of claim 3, wherein the embossed structure sets the substrate mounting surface to a plane, and forms the coating layer on the plane. The winner of the protrusion.

The electrostatic chuck of claim 8 is the electrostatic chuck of claim 1, wherein the film layer is formed on the substrate mounting surface for lifting the substrate from the substrate mounting surface. The area where the lift pin is provided to lift and lower the opening.

The electrostatic chuck of claim 9 is the electrostatic chuck of the first application of the patent scope, and the film layer is formed over the entire surface of the substrate mounting surface.

The electrostatic chuck of claim 10 is the electrostatic chuck of any one of claims 1 to 9, which is formed of glass.

The electrostatic chuck of any one of claims 1 to 9 wherein the substrate mounting surface has an upper layer, a lower layer, and an electrostatic electrode held by the upper layer and the lower layer. The upper layer of the electrostatic clamp of the board The surface of the portion, the upper layer and the lower layer are composed of a dielectric material that is resistant to fluorine-containing gas.

The electrostatic chuck of claim 12 is the electrostatic chuck of the first aspect of the patent application, wherein the substrate mounting surface is formed with an outer peripheral portion and an island portion existing in a region surrounded by the outer peripheral portion. An embossed structure of the protruding portion; the film layer is formed on the island portion; and the outer peripheral portion is made of a plasma-resistant material.

The electrostatic chuck of claim 13 is in the electrostatic chuck of claim 12, and the island portion is formed only by the film layer.

The electrostatic chuck of claim 14 is the electrostatic chuck of claim 12, wherein the island portion is such that the substrate mounting surface protrudes to form a protrusion, and the film layer is formed on the protrusion.

The electrostatic chuck of claim 15 is the electrostatic chuck of any one of claims 12 to 14, which is formed of glass.

The electrostatic chuck of any one of claims 12 to 14, wherein the substrate mounting surface has an upper layer, a lower layer, and an electrostatic electrode held by the upper layer and the lower layer. The upper surface of the upper layer of the electrostatic chuck of the plate, the upper layer and the lower layer being composed of a dielectric resistant to fluorine-containing gas.

According to the present invention, since the substrate-mounted surface is formed with the same material as the constituent material of the inner surface of the substrate and abuts against the inner surface of the substrate, the substrate placed on the electrostatic chuck can be prevented from being removed from the electrostatic chuck. The peeling and charging which is easy to occur at the time of lifting can prevent damage to the circuit components formed on the surface of the substrate and adhesion of the contaminant to the substrate, and can prevent damage to the inner surface of the substrate, and can be easily applied to the device that has been installed.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

Fig. 1 is a cross-sectional view showing the configuration of a substrate processing apparatus to which a substrate mounting table including an electrostatic chuck according to an embodiment of the present invention is applied. This substrate processing apparatus applies, for example, a predetermined plasma treatment to a glass substrate for liquid crystal display device manufacturing.

In FIG. 1, the substrate processing apparatus 10 has a chamber 11 (for example, a substrate G composed of rectangular glass having a single side of several meters), and a substrate G is placed on the lower side of the inside of the chamber 11. Placement (crystal holder) 12. The crystal holder 12 is composed of, for example, a substrate 13 made of aluminum treated with an alumite treatment, and the substrate 13 is supported by the bottom of the chamber 11 via the insulating member 14. The base material 13 has a convex shape in cross section, and an electrostatic chuck 40 in which an electrostatic electrode plate 44 is built is provided on the upper portion, and an upper plane thereof serves as a substrate mounting surface 41 on which the substrate G is placed.

A shield ring 15 as a shield member is provided so as to surround the periphery of the substrate mounting surface 41, and the shield ring 15 is made of an insulating ceramic such as alumina.

The DC power supply 17 is connected to the electrostatic electrode plate 44, and when a positive DC voltage is applied to the electrostatic electrode plate 44, the surface of the substrate G on the substrate mounting surface 41 on the side of the electrostatic electrode plate 44 (hereinafter referred to as "inside" The surface") induces a negative electric charge, thereby generating an electric field between the electrostatic electrode plate 44 and the inner surface of the substrate G, and the substrate G is subjected to a Coulomb force or a Johnsen-Rahbek force due to the electric field. The effect is adsorbed and held on the substrate mounting surface 41.

A temperature adjustment mechanism (not shown) is provided inside the substrate 13 to adjust the temperature of the substrate 13 and the substrate G placed on the substrate mounting surface 41. The temperature adjustment mechanism is circulated and supplied with, for example, cooling water or a refrigerant such as Galden (registered trademark), and the substrate 13 cooled by the refrigerant cools the substrate G.

An insulating ring 18 is disposed around the substrate 13 as a shield ring 15 to be included A side sealing member that covers the side surface of the abutting portion of the base material 13 is covered. The insulating ring 18 is made of an insulating ceramic such as alumina.

A lifter pin 21 is inserted into the through hole of the bottom wall of the chamber 11 , the insulating member 14 , and the base material 13 so as to be movable up and down. The lift pin 21 is actuated when the substrate G placed on the substrate mounting surface 41 is loaded and unloaded, and is placed on the substrate when the substrate G is carried into the chamber 11 or when it is carried out from the chamber 11. The opening 21a of the mounting surface 41 rises to the transfer position above the crystal holder 12, and is otherwise housed in the substrate mounting surface 41 in an embedded state.

A plurality of heat conduction gas supply holes (not shown) are opened in the substrate mounting surface 41. The plurality of heat transfer gas supply holes are connected to a heat transfer gas supply unit (not shown), and a helium (He) gas as a heat transfer gas is supplied from the heat transfer gas supply unit to a gap between the substrate mounting surface 41 and the inner surface of the substrate G. The helium gas system supplied to the gap between the substrate mounting surface 41 and the inner surface of the substrate G transfers the heat of the crystal holder 12 to the substrate G in an effective manner.

The high-frequency power source 23 for supplying high-frequency power is connected to the substrate 13 of the wafer holder 12 via the matching unit 24. For example, high frequency power for plasma generation is applied from the high frequency power source 23, and the crystal holder 12 functions as a lower electrode. The matcher 24 reduces the reflection of the high frequency power from the pedestal 12 to maximize the application efficiency of the high frequency power toward the pedestal 12.

The substrate processing apparatus 10 forms a side exhaust flow path 26 by the inner side wall of the chamber 11 and the side surface of the crystal holder 12. This side exhaust flow path 26 is connected to the exhaust device 28 via the exhaust pipe 27. Both the TMP (Turbo Molecular Pump) and the DP (Dry Pump) (not shown) of the exhaust device 28 are evacuated in the chamber 11 to reduce the pressure. Specifically, the DP system decompresses the inside of the chamber 11 from atmospheric pressure to a medium vacuum state (for example, 1.3×10 Pa (0.1 Torr) or less), and the TMP system and the DP cooperate to decompress the chamber 11 to a medium vacuum state. It requires lower pressure of high vacuum state ^{(e.g., 1.3 × 10 - 3 Pa (} 1.0 × 10 -5 Torr) or less). In addition, the pressure within the chamber 11 is controlled by an APC valve (not shown).

The shower head 30 is disposed on the ceiling portion of the chamber 11 opposite to the crystal seat 12. The shower head 30 has an internal space 31 and has a plurality of gas holes 32 through which the processing gas flows out from the processing space S between the crystal holder 12. The shower head 30 is grounded to function as an upper electrode, and constitutes a pair of parallel plate electrodes together with the crystal holder 12 which functions as a lower electrode.

The shower head 30 is connected to the processing gas supply source 39 via a gas supply pipe 36. The gas supply pipe 36 is provided with an on-off valve 37 and a mass flow controller 38. Further, a substrate carry-out port 34 is provided on the side wall of the chamber 11, and the substrate carry-in/out port 34 can be opened and closed by the gate valve 35. Further, the substrate G to be processed is carried in and out via the gate valve 35.

The substrate processing apparatus 10 supplies the processing gas from the processing gas supply source 39 via the processing gas introduction pipe 36. The supplied process gas system is introduced into the processing space S of the chamber 11 via the internal space 31 of the shower head 30 and the gas holes 32. The introduced process gas system is excited by the high-frequency power generated by the plasma generated from the high-frequency power source 23 via the crystal holder 12 in the processing space S to become a plasma. The ions in the plasma are pulled in toward the substrate G, and the substrate G is subjected to a predetermined plasma etching treatment.

The components of the components of the substrate processing apparatus 10 are controlled by a CPU corresponding to a control unit (not shown) provided in the substrate processing apparatus 10 in accordance with a program corresponding to the plasma etching process.

Next, the electrostatic chuck of the present invention (the substrate mounting surface on which the substrate stage 12 in the substrate processing apparatus 10 of Fig. 1 is formed) will be described.

Fig. 2 is a cross-sectional view showing the configuration of an electrostatic chuck according to a first embodiment of the present invention. A glass substrate for manufacturing a liquid crystal display device as a substrate is placed on the electrostatic chuck.

In FIG. 2, the electrostatic chuck 40a is disposed on the substrate 13 of the constituent members of the crystal holder 12, and the main structure includes an upper layer 42 composed of insulating ceramic alumina (Al ₂ O ₃ ) and also alumina. The lower layer 43 composed of (Al ₂ O ₃ ) and the electrostatic electrode plate 44 formed of a metal layer interposed therebetween are sandwiched by the upper layer 42 and the lower layer 43. The upper surface of the upper layer 42 is a substrate mounting surface 41. The substrate mounting surface 41 is provided with a coating layer made of the same material as the inner surface of the substrate G placed on the substrate mounting surface 41 (hereinafter referred to as a coating layer). "Upper level" 45a. The uppermost layer 45a is in contact with the inner surface of the substrate G.

The substrate G is made of glass, and the inner surface thereof is also made of glass. Corresponding to this, the uppermost layer 45a is formed of glass.

The constituent materials of the uppermost layer 45a and the inner surface of the substrate G are also formed of a glass material to prevent peeling electrification.

In the present embodiment, the mechanism for preventing peeling electrification is considered as follows. Generally, when the two members that are in contact with each other are peeled off, static electricity is generated due to the difference between the charged rows. Such a phenomenon is called stripping charging. Therefore, the difference between the constituent material of the inner surface of the substrate G and the charging row of the constituent material of the uppermost layer 45a of the substrate mounting surface on which the electrostatic chuck 40a of the substrate G is placed is reduced as much as possible, and preferably becomes zero. It can suppress the occurrence of peeling electrification. Therefore, in the present embodiment, when the constituent material of the uppermost layer 45a of the electrostatic chuck 40a is made of the same material (that is, the glass material) as the constituent material of the inner surface of the substrate G placed on the electrostatic chuck 40a, the two materials can be eliminated. The difference in the electrification column can effectively prevent the peeling electrification occurring when the substrate G placed on the electrostatic chuck 40a is lifted from the electrostatic chuck 40a.

Further, a flow path 46 for the helium gas supplied to the temperature transmitting medium supplied between the uppermost layer 45a and the inner surface of the substrate G placed on the uppermost layer 45a is provided around the uppermost layer 45a.

The electrostatic chuck 40a thus constructed is assembled to the substrate processing apparatus of FIG. 10. When the substrate G is subjected to a predetermined plasma etching process, the substrate G is supported from the inner surface.

According to the present embodiment, the uppermost layer 45a of the glass material of the same material is provided on the substrate mounting surface 41 of the upper layer 42 so that the inner row of the substrate G and the uppermost layer 45a can be formed. The charging row is the same, and it is possible to prevent peeling electrification which is likely to occur when the substrate G placed on the electrostatic chuck 40a is lifted from the electrostatic chuck 40a. Thereby, it is possible to prevent the circuit element formed by the surface of the substrate G from being destroyed by the electrostatic discharge caused by the negative charge of the substrate G, or the contamination substance from adhering to the substrate G. Further, if the constituent material of the inner surface of the substrate G is made of glass as the constituent material of the uppermost layer 45a, the hardness difference between the inner surface of the substrate G and the constituent material of the uppermost layer 45a contacting the inner surface of the substrate G can be eliminated. It can prevent damage to the inner surface of the substrate due to the difference in hardness.

In the present embodiment, a glass material is used as the constituent material of the uppermost layer 45a of the electrostatic chuck 40a, and a material close to the electrification column such as quartz or polyamide may be used as the material of the inner surface of the substrate G. . Since quartz and polyamine have a charging line close to that of glass, even if it is used as a constituent material of the uppermost layer 45a, peeling electrification with the glass substrate G can be suppressed.

In the present embodiment, the thickness of the uppermost layer 45a is, for example, 10 μm to 100 μm, and the uppermost layer 45a is formed by a known method such as spraying of a glass material, coating, adhesion of a glass plate, and peeling of a portion after the glass plate. .

In the present embodiment, the upper layer 42 and the lower layer 43 of the electrostatic chuck 40a are formed of a dielectric alumina. Since alumina is resistant to a plasma (fluorine-based plasma) generated by a fluorine-containing gas such as SF ₆ or CF ₄ , the electrostatic chuck 40 a is not consumed even by the reverse plasma etching treatment. In addition, when not only the uppermost layer 45a but also the upper layer 42 and the lower layer 43 are formed of a glass material, microcracking or the like is likely to occur, and it is difficult to ensure the insulation of the electrostatic chuck 40a. Further, since the fluorine-containing gas is often used for the treatment of the glass substrate, if the upper layer 42 and the lower layer 43 are formed of a glass material, the portion of the plasma generated by the fluorine gas is damaged. Therefore, it is preferable to use only the glass material for the uppermost layer 45a, and alumina or the like which is resistant to the fluorine-based plasma for the upper layer 42 and the lower layer 43.

In the present embodiment, the uppermost layer 45a is provided on the entire substrate mounting surface 41, but is not limited thereto.

Fig. 3 is a cross-sectional view showing the configuration of an electrostatic chuck according to a second embodiment of the present invention. The electrostatic chuck 40b differs from the electrostatic chuck 40a of FIG. 2 in that the substrate mounting surface 41 is surrounded by the outer peripheral portion in order to reduce the contact area between the inner surface of the substrate G and the substrate mounting surface 41 on the surface of the upper layer 42 of the electrostatic chuck 40b. The portion surrounded by (hereinafter referred to as "deck portion") is formed into an embossed shape, and only the bank portion is provided with the uppermost layer 45b composed of a glass material.

In addition, the embossed shape refers to, for example, a shape of a portion of a plurality of convex islands arranged in a checkerboard shape such as a circular or rectangular shape and a concave portion surrounding the island portion, in other words, a finger Some kind of overhead view is in a state of relief.

According to the present embodiment, since the uppermost layer 45b made of a glass material is provided in the bank portion around the substrate mounting surface 41 where the peeling and charging is likely to occur, the bank portion of the substrate mounting surface 41 and the inner surface of the substrate G have the same surface. The charging line prevents the occurrence of peeling electrification of the embankment portion, thereby preventing the circuit element formed by the substrate G from being negatively charged and being damaged by the surface of the substrate G, and preventing the contaminant from adhering to the substrate G.

Fig. 4 is a cross-sectional view showing the configuration of an electrostatic chuck according to a third embodiment of the present invention. The electrostatic chuck 40c differs from the electrostatic chuck 40b of FIG. 3 in that an uppermost layer 45c made of a glass material is provided on both surfaces of the bank portion of the substrate mounting surface 41 and the embossed island portion surrounded by the bank portion.

In FIG. 4, the substrate mounting surface 41 of the upper layer 42 of the electrostatic chuck 40c is processed into an embossed shape, and an uppermost layer 45c1 made of a glass material is formed on the surface of the bank portion, and An uppermost layer 45c2 composed of a glass material is formed on a surface of the embossed island portion surrounded by the embankment portion.

According to the present embodiment, the uppermost layer 45c of the electrostatic chuck 40c is made of the same material as the inner surface of the substrate G, and the uppermost layer 45c is formed by the uppermost layer 45c1 formed in the embankment portion and the embossed island portion surrounded by the embankment portion. Since the uppermost layer 45c2 formed in the space is formed, the difference in the number of electrification columns between the uppermost layer 45c on which the substrate is placed and the constituent material on the inner surface of the substrate G can be eliminated, and the contact area between the inner surface of the substrate G and the uppermost layer 45c can be reduced. Thereby, it is possible to more reliably prevent the occurrence of peeling electrification, and it is possible to prevent the circuit element formed on the surface of the substrate from being damaged by the charging of the substrate G, and the particles adhering to the substrate or the like.

In the present embodiment, the thickness of the uppermost layer 45c is, for example, 0.1 μm to 10 μm, which is relatively thin, and can be easily formed by, for example, a coating method. Therefore, the uppermost layer 45c can be attached to the electrostatic chuck of the device that has been installed, and can be sufficiently matched even at the manufacturing site of the LCD. Further, the uppermost layer 45c composed of a glass material is for preventing direct contact between the inner surface of the substrate G composed of glass placed on the electrostatic chuck 40c and the upper layer 42 made of alumina of the electrostatic chuck 40c.

Fig. 5 is a cross-sectional view showing the configuration of an electrostatic chuck according to a fourth embodiment of the present invention. The electrostatic chuck 40d is formed in an embossed shape surrounded by the embankment portion in the same manner as the electrostatic chuck 40c of the third embodiment shown in Fig. 4, and is different from the electrostatic chuck 40c of Fig. 4 in that the substrate of the upper layer 42 is used. The mounting surface 41 is set as a flat surface, and the uppermost layer 45d1 which is composed of a glass material and which is configured as a bank portion of the substrate mounting surface 41 is provided on the upper layer 42, and the uppermost layer 45d2 composed of a glass material is provided as the embankment. The embossed island portion of the area surrounded by the department. The uppermost layer 45d in Fig. 5 is composed of the uppermost layer 45d1 and the uppermost layer 45d2.

According to the present embodiment, it is possible to prevent peeling and charging which is likely to occur when the substrate G is lifted up, and to prevent contamination substances such as particles from adhering to the substrate G and to prevent breakage. The circuit element or the like formed on the surface of the substrate is bad, and damage to the inner surface of the substrate G can be prevented.

In the present embodiment, the thickness of the uppermost layer 45d is, for example, 10 μm to 100 μm, and the uppermost layer 45d is formed by a known method such as spraying of a glass material, coating, adhesion of a glass plate, and partial peeling of a glass plate. .

Fig. 6 is a plan view showing the configuration of an electrostatic chuck according to a fifth embodiment of the present invention. The electrostatic chuck is provided with an uppermost layer made of a glass material in the vicinity of an opening in which the lift pins of the substrate mounting surface are lifted and lowered.

In FIG. 6, the electrostatic chuck 40e has a lift pin 21, and is provided for supporting the substrate G on the substrate when the substrate G is loaded into the processing chamber 11 or when the substrate G is carried out from the processing chamber 11. Above the surface, an uppermost layer 45e made of a glass material is provided on the peripheral portion of the opening 21a where the lift pin 21 is lifted and lowered.

When the substrate G placed on the substrate mounting surface of the electrostatic chuck is lifted from the substrate mounting surface, the portion where the substrate G and the substrate mounting surface are first peeled off is the peripheral portion of the lift pin on which the substrate G is lifted. The peeling electrification is likely to occur in the peripheral portion of the lift pin.

In the present embodiment, in view of such circumstances, the uppermost layer 45f made of a glass material is provided in the peripheral portion of the opening 21a where the lift pin 21 is raised and lowered.

According to the present embodiment, since the uppermost layer 45e made of a glass material is provided in the peripheral portion of the opening 21a in which the lift pin 21 is likely to be lifted and lowered, and the inner surface of the substrate G is formed, it is possible to effectively prevent the use. The lift pin 21 charges the peeling of the substrate G from the substrate mounting surface, thereby preventing charging of the substrate G, preventing damage to the circuit components formed on the surface of the substrate G, and preventing contamination from adhering to the substrate. G and so on.

The glass material is applied to all or part of the embankment of the substrate mounting surface 41 of the electrostatic chuck of the second embodiment to the fifth embodiment, but the plasma used for the plasma etching treatment applied to the substrate G is contained. In the case of a fluorine-based plasma of a fluorine ion or a fluorine radical, for example, when a plasma generated by SF ₆ or CF _{4 is} used as a main component, the bank portion may be etched and consumed by the fluorine-based plasma.

According to the sixth embodiment of the present invention, the bank portion of the substrate mounting surface 41 is made of an insulating ceramic such as alumina or yttria which is resistant to fluorine plasma.

Fig. 7 is a cross-sectional view showing the configuration of an electrostatic chuck according to a sixth embodiment of the present invention.

The electrostatic chuck 40e differs from the electrostatic chuck 40b of Fig. 3 of the second embodiment in that the bank portion (outer peripheral portion) is formed of alumina or yttrium oxide in the same manner as the upper layer 42 and the lower layer 43. The embossed island portion (hereinafter referred to as "embossed portion") 48 (protrusion portion) surrounded by the portion is formed only of the glass material.

In FIG. 7, the substrate portion 41 formed on the portion where the plasma may be in contact with the substrate mounting surface 41 of the electrostatic chuck 40e is made of alumina or yttria which is resistant to fluorine plasma. Even when the plasma used in the plasma etching treatment applied to the surface of the substrate G is a highly reactive fluorine plasma as a main component, the bank portion 47 can be prevented from being consumed.

Further, since the embossed portion 48 of the inner surface of the substrate G and the constituent material of the inner surface of the substrate G are made of the same glass material, not only peeling electrification but also the substrate G can be suppressed. The surface is caused by the occurrence of minute scratches due to the difference in hardness from the substrate mounting surface 41, and it is possible to prevent display failure of the liquid crystal display device due to the minute flaw. Further, from the viewpoint of suppressing the occurrence of minute flaws, the embossed portion 48 can be composed of a material having the same hardness or a lower hardness as the glass material, and for example, can be composed of boron nitride, nickel oxide, aluminum titanate or the like. .

Furthermore, since the embossed portion 48 of the electrostatic chuck 40e is formed only of the glass material, the embossed portion can be changed only by changing the arrangement portion (for example, the coating portion) of the glass material. The formation portion of 48, whereby the degree of freedom in the arrangement of the embossed portion 48 can be improved.

Further, in the present embodiment, since the bank portion 47 is formed of an insulating ceramic, a slight flaw may occur on the inner surface of the peripheral portion of the substrate G, but the peripheral portion of the substrate G corresponds to the liquid crystal display device. Since the peripheral portion of the display surface is outside the range in which the TFT rows are formed, the minute flaws hardly affect the display quality of the liquid crystal display device.

Fig. 8 is a cross-sectional view showing the configuration of a first modification of the electrostatic chuck of Fig. 7.

In FIG. 8, the electrostatic chuck 40f is provided with a bank portion 47 formed of an insulating ceramic, and an embossed portion 48 mainly formed of an insulating ceramic and having a glass material formed thereon. Upper layer 45c3.

The electrostatic chuck 40f is different from the electrostatic chuck 40e, and the embossed portion 48 is not entirely formed of a glass material, and only the uppermost layer 45c3 composed of the glass material is formed on the upper surface, so that the layer formed of the glass material can be thinned, so that coating can be performed. A simple method such as a method to form the layer. Further, the uppermost layer 45c3 can be formed not only by a coating method but also by a known method such as spraying of a glass material, adhesion of a thin glass plate, and partial peeling by polishing after the glass plate.

Fig. 9 is a cross-sectional view showing a configuration of a second modification of the electrostatic chuck of Fig. 7.

In FIG. 9, the electrostatic chuck 40g is provided with a bank portion 47 made of an insulating ceramic and a flat inner surface abutting portion 49 made of a glass material. The inner surface abutting portion 49 is disposed on the substrate mounting surface 41 and surrounds the periphery thereof with the bank portion 47. When the substrate G is placed on the electrostatic chuck 40g, the inner surface of the substrate G abuts against the bank portion 47 and the inner surface abutting portion 49.

Fig. 10 is a cross-sectional view showing a configuration of a third modification of the electrostatic chuck of Fig. 7.

In FIG. 10, the electrostatic chuck 40h is provided with a bank portion 47 made of an insulating ceramic and a flat inner surface abutting portion 50 made of a glass material. Inner surface abutment Similarly to the inner surface abutting portion 49, the peripheral portion 49 surrounds the periphery thereof, and a plurality of grooves (grooves) 51 serving as a flow path of the heat conduction gas are formed. When the substrate G is placed on the electrostatic chuck 40h, the inner surface of the substrate G abuts against the bank portion 47 and the inner surface abutting portion 50.

Even in the electrostatic chuck 40g and the electrostatic chuck 40h, since the inner surface abutting portions 49 and 50 which are in contact with most of the inner surface of the substrate G are formed of the same glass material as the constituent material of the inner surface of the substrate G, it is possible to It is also possible to prevent the occurrence of minute scratches on the inner surface of the substrate G due to the difference in hardness between the inner surface of the substrate G and the substrate mounting surface 41.

The present invention has been described in detail above with reference to the embodiments, but the invention is not limited thereto.

10‧‧‧Substrate processing unit

40a~40e‧‧‧Electrostatic fixture

41‧‧‧Substrate placement surface

42‧‧‧Upper

43‧‧‧Under

44‧‧‧Electrostatic electrode plate

45a~45e‧‧‧ top layer

Fig. 1 is a cross-sectional view showing the structure of a substrate processing apparatus including a substrate mounting table to which an electrostatic chuck according to an embodiment of the present invention is applied.

Fig. 2 is a cross-sectional view showing the configuration of an electrostatic chuck according to a first embodiment of the present invention.

Fig. 3 is a cross-sectional view showing the structure of an electrostatic chuck according to a second embodiment of the present invention.

Fig. 4 is a cross-sectional view showing the structure of an electrostatic chuck according to a third embodiment of the present invention.

Fig. 5 is a cross-sectional view showing the structure of an electrostatic chuck according to a fourth embodiment of the present invention.

Fig. 6 is a cross-sectional view showing the structure of an electrostatic chuck according to a fifth embodiment of the present invention.

Fig. 7 is a cross-sectional view showing the structure of an electrostatic chuck according to a sixth embodiment of the present invention.

Fig. 8 is a cross-sectional view showing the configuration of a first modification of the electrostatic chuck of Fig. 7;

Fig. 9 is a cross-sectional view showing the structure of a second modification of the electrostatic chuck of Fig. 7.

Fig. 10 is a cross-sectional view showing the configuration of a third modification of the electrostatic chuck of Fig. 7;

12‧‧‧Station (Crystal)

13‧‧‧Substrate

17‧‧‧DC power supply

40a‧‧‧Electrostatic fixture

41‧‧‧Substrate placement surface

42‧‧‧Upper

43‧‧‧Under

44‧‧‧Electrostatic electrode plate

45a‧‧‧film layer

46‧‧‧Flow path

Claims (16)

An electrostatic chuck is formed in a processing chamber of a substrate processing apparatus, and forms a substrate mounting surface on a substrate mounting table on which the substrate is placed; wherein the substrate mounting surface is formed with a material constituting the inner surface of the substrate The same material and abuts against the film layer on the inner surface of the substrate. The electrostatic chuck according to the first aspect of the invention, wherein the substrate mounting surface is formed with an embossed structure that is a protruding portion that protrudes from an outer peripheral portion and an island portion existing in a region surrounded by the outer peripheral portion; A layer system is formed on the outer peripheral portion. The electrostatic chuck of claim 2, wherein the film layer is further formed on the island portion. The electrostatic chuck of claim 2, wherein the embossed structure is such that the substrate mounting surface protrudes to form a protrusion, and the film layer is formed on the protrusion. The electrostatic chuck of claim 3, wherein the embossed structure is such that the substrate mounting surface protrudes to form a protrusion, and the film layer is formed on the protrusion. The electrostatic chuck according to claim 2, wherein the embossed structure is formed by setting the substrate mounting surface as a flat surface, and forming the protruding portion by the coating layer on the plane. The electrostatic chuck according to claim 3, wherein the embossed structure is formed by setting the substrate mounting surface as a flat surface, and forming the protruding portion by the coating layer on the plane. The electrostatic chuck of claim 1, wherein the film layer is formed on the substrate mounting surface for lifting the substrate from the substrate mounting surface The area where the lift pin is set to open and lower. The electrostatic chuck of claim 1, wherein the coating layer is formed over the entire substrate mounting surface. The electrostatic chuck of any one of claims 1 to 9, wherein the film layer is formed of glass. The electrostatic chuck according to any one of claims 1 to 9, wherein the substrate mounting surface has an upper layer, a lower layer, and an upper surface of the upper layer of the electrostatic chuck of the electrostatic electrode plate held by the upper layer and the lower layer The upper layer and the lower layer are composed of a dielectric material that is resistant to fluorine-containing gas. The electrostatic chuck according to the first aspect of the invention, wherein the substrate mounting surface is formed with an embossed structure that is a protruding portion that protrudes from an outer peripheral portion and an island portion existing in a region surrounded by the outer peripheral portion; A layer is formed on the island portion; the outer peripheral portion is composed of a plasma resistant material. The electrostatic chuck of claim 12, wherein the island portion is formed only by the film layer. The electrostatic chuck of claim 12, wherein the island portion causes the substrate mounting surface to protrude to form a protrusion, and the film layer is formed on the protrusion. The electrostatic chuck of any one of claims 12 to 14, wherein the film layer is formed of glass. The electrostatic chuck according to any one of claims 12 to 14, wherein the substrate mounting surface has an upper layer, a lower layer, and an upper surface of the upper layer of the electrostatic chuck of the electrostatic electrode plate held by the upper layer and the lower layer The upper layer and the lower layer are composed of a dielectric material that is resistant to fluorine-containing gas.