JP2009152434A - Substrate processing equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide substrate processing equipment that can replace an exchangeable member arranged in a processing vessel, in a short period of time. <P>SOLUTION: The substrate processing equipment 1 has: a chamber 2 to accommodate a substrate G; an exchangeable placement board 3b provided at the top face of a base 3a on a placement pedestal 3 arranged within the chamber 2; a high frequency power supply 17 for performing plasma processing for the substrate G within the chamber 2; and a shower head 20 for guiding raw gas in the chamber 2, wherein the placement board 3b is attached to the base 3a through electrostatic suction. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus that performs a process such as dry etching on a substrate such as a glass substrate or a semiconductor wafer for manufacturing a flat panel display (FPD) such as a liquid crystal display (LCD).

  For example, in a semiconductor manufacturing process or an FPD manufacturing process, various processes such as etching, sputtering, and CVD (chemical vapor deposition) are performed on a glass substrate that is a substrate to be processed.

  Among these, in a plasma etching apparatus that performs an etching process, a substrate is mounted on a substrate mounting table provided in a chamber that is a processing container, a processing gas is introduced into the chamber, and the processing gas is turned into plasma to perform plasma etching. Process. Since the surface of the member existing in the chamber is contaminated by the plasma of the processing gas by this plasma etching process, the contaminated part can be removed and periodically removed and replaced during cleaning maintenance. (Patent Document 1, etc.).

  Such an exchange operation needs to be performed while the apparatus is stopped, and in order to reduce the productivity of the apparatus, it is required to perform the replacement in as short a time as possible so that the apparatus can be produced more quickly.

  However, in the FPD manufacturing process, the glass substrate to be processed is directed to increase in size, and a huge substrate with a side exceeding 2 m is also required. Therefore, the number of screws for installing and fixing replacement parts also increases, and the time required to attach and remove these replacement parts during maintenance is extremely long. For this reason, the maintenance takes a long time and the productivity is lowered.

  On the other hand, as a plasma etching apparatus, a shower head for introducing a processing gas into the chamber is provided in the chamber so as to face the mounting table, and these mounting table and shower head are used as a lower electrode and an upper electrode, respectively. A parallel plate type that generates plasma by applying high-frequency power to at least one of them is often used. In such a plasma etching apparatus, a shower head used as an upper electrode has a shower plate having a large number of gas discharge holes, but this shower plate is a part that directly contacts processing gas and plasma, and the surface is Since it is easy to deteriorate and wear out, it is periodically replaced as a replacement part as described above, and the surface is reprocessed. Moreover, it may be damaged by abnormal discharge, and when repair is difficult, it is replaced with a new one.

As described above, if the glass substrate for FPD is increased in size, the shower plate that functions as the upper electrode also increases in size and the number of gas discharge holes increases, so that the shower plate itself is expensive. It has become. In addition, since the high-frequency power input increases with the increase in size, the electrode surface deteriorates and wears faster, and the risk of abnormal discharge increases. The cost will be extremely high.
JP-A-5-121360

The present invention has been made in view of such circumstances, and an object of the present invention is to provide a substrate processing apparatus capable of exchanging replaceable processing container members disposed in the processing container in a short time.
It is another object of the present invention to provide a substrate processing apparatus that can reduce the replacement cost of a shower plate.

  In order to solve the above-described problems, in a first aspect of the present invention, a processing container that accommodates a substrate, a replaceable processing container inner member that is disposed in the processing container, and a predetermined substrate with respect to the substrate in the processing chamber. And a processing mechanism that performs processing, and at least one of the processing container inner members is attached by electrostatic adsorption.

  In the first aspect, a mounting portion that constitutes an upper surface of a mounting table on which a substrate is mounted can be applied as the replaceable processing container inner member that is attached by electrostatic attraction. In addition, a part or all of a shower plate having a large number of gas discharge holes constituting the lower surface of a shower head for discharging a processing gas for processing a substrate into the processing container in a shower shape can be applied. Furthermore, a liner member provided on the inner surface of the processing container can be applied. Furthermore, a plasma generation mechanism for generating plasma of the processing gas in the processing container may be further provided.

  In a second aspect of the present invention, a processing container that accommodates a substrate, a mounting table for mounting the substrate in the processing container, a shower head that is provided facing the mounting table and that discharges a processing gas, A plasma generating mechanism for generating plasma of a processing gas in the processing container, the mounting table has a mounting portion as a replaceable member on the upper surface thereof, and the shower head has a gas discharge hole formed therein. A shower plate is provided on the lower surface thereof, and a part or all of the shower plate is a replaceable member, and a liner as a replaceable member is attached to a side wall of the processing vessel, and at least one of the replaceable members is static. Provided is a substrate processing apparatus which is attached by electroadsorption.

  In the second aspect, the shower plate includes a main body and a thin plate member provided on the lower surface side of the main body, and the thin plate member can be used as a replaceable member. The gas discharge holes formed in the shower plate preferably have a large diameter portion in the main body and a small diameter portion in the thin plate member.

  In a third aspect of the present invention, a processing container that accommodates a substrate, a mounting table for mounting the substrate in the processing container, a shower head that is provided facing the mounting table and that discharges a processing gas, A plasma generation mechanism for generating plasma of a processing gas in a processing container, the shower head includes a shower plate having a number of gas discharge holes, and the shower plate includes a main body and a lower surface side of the main body And a replaceable thin plate member provided on the substrate.

  In the third aspect, it is preferable that the gas discharge holes formed in the shower plate have a large diameter portion in the main body and a small diameter portion in the thin plate member.

  According to the present invention, since at least one of the replaceable processing container inner members arranged in the processing container is attached by electrostatic adsorption, the processing container inner member can be attached / detached only by on / off of electrostatic adsorption. It can be exchanged in a shorter time than when attaching and detaching with a large number of screws.

  Moreover, since the shower plate has a structure having a main body and a replaceable thin plate member provided on the lower surface side of the main body, the gas discharge hole can be easily processed, and the parts to be replaced are small. Therefore, the replacement cost can be extremely reduced.

  Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a cross-sectional view showing a plasma etching apparatus according to a first embodiment of the present invention. The plasma etching apparatus 1 is a cross-sectional view of an apparatus for performing a predetermined process on an FPD glass substrate G, and is configured as a capacitively coupled parallel plate plasma etching apparatus. Here, as FPD, a liquid crystal display (LCD), an electroluminescence (Electro Luminescence; EL) display, a plasma display panel (PDP), etc. are illustrated.

  This plasma etching apparatus 1 has a chamber 2 formed into a rectangular tube shape made of aluminum, for example, whose surface is anodized (anodized).

  At the bottom of the processing chamber 2 is provided a mounting table 3 having a rectangular shape for mounting a glass substrate G as a substrate to be processed. The mounting table 3 is supported on the bottom of the processing chamber 2 via a support member 4 made of an insulating material. The support member 4 has an L-shaped cross section and is provided in a frame shape along the entire circumference of the mounting table. The support member 4 and the mounting table 3 are hermetically sealed by a seal member (not shown). ing. An inner portion of the support member 4 at the bottom of the chamber 2 is an opening 2a. The mounting table 3 is made of metal, and includes a base 3a supported by the support member 4 and a mounting plate 3b provided on the base 3a and having a mounting surface on which the glass substrate G is mounted. is doing. Around the mounting plate 3b, a shield ring 5 having a frame shape and made of an insulating material is provided.

  The substrate 3a is provided with an electrostatic adsorption fixing unit 40. The electrostatic adsorption fixing portion 40 is provided in the vicinity of the upper surface of the base material 3a over a plurality of electrode pads 6 (only four are shown in the figure) provided on the entire surface over almost the same height, and in the electrode pad peripheral portion. And an insulating member 7. Further, a passage 8 communicating with the outside is formed in a portion immediately below the electrode pad 6 of the base material 3 a, and the insulating member 7 is also formed around the passage 8. A power supply line 9 is connected to the electrode pad 6 from the outside through a passage 8. A switch 10 is interposed in the power supply line 9, and the switch 10 is connected to any one of a DC circuit 11 and a ground circuit 12 including a resistor 12a. Then, by connecting the switch 10 to the DC power supply 11 side, a DC voltage is applied to the electrode pad 6, and the mounting plate 3b is adsorbed and fixed to the substrate 3a by electrostatic force (Coulomb force). Further, by connecting the switch 10 to the ground circuit 12 side, the voltage is turned off, and the power supply line 9 is grounded via the ground circuit 12, so that the electrode pad 6 is neutralized and suction is released. It has become.

  Instead of individually enabling the DC power supply 11 to be connected to each electrode pad 6 as described above, a plurality of power supply lines 9 are connected to a common power supply line 109 as shown in FIG. A switch 110 may be provided at 109, and the switch 110 may be connected to either the DC power supply 111 or the ground circuit 112 including the resistor 112a.

  In addition, the mounting table 3 is provided with lifting pins 13 for protruding and retracting to load and unload the glass substrate G onto the mounting surface. A power supply line 15 for supplying high frequency power is connected to the base material 3 a of the mounting table 3, and a matching unit 16 and a high frequency power supply 17 are connected to the power supply line 15. For example, high frequency power of 13.56 MHz is supplied from the high frequency power supply 17 to the mounting table 3.

  Above the mounting table 3, a shower head 20 that functions as an upper electrode is provided in parallel with the mounting table 3. The shower head 20 is supported by the upper part of the chamber 2, and has a main body 20a and a shower plate 20b provided at the lower part thereof and formed with a plurality of gas discharge holes 22 for discharging a processing gas. The shower plate 20b is screwed to the main body 20a. A processing gas diffusion space 21 is formed between the main body 20a and the shower plate 20b. The shower head 20 is grounded and forms a pair of parallel plate electrodes together with the susceptor 4.

A gas inlet 25 is provided on the upper surface of the shower head 20, and a processing gas supply pipe 26 is connected to the gas inlet 25, and a valve 27 and a mass flow controller 28 are connected to the processing gas supply pipe 26. A processing gas supply source 29 is connected to the via. A processing gas for etching is supplied from the processing gas supply source 29. As the processing gas, a gas usually used in this field, such as a halogen-based gas, an O ₂ gas, or an Ar gas, can be used.

  An exhaust port 30 is formed at the bottom of the chamber 2. An exhaust pipe 31 is connected to the exhaust port 30, and an exhaust device 32 is connected to the exhaust pipe 31. The exhaust device 32 includes a vacuum pump such as a turbo molecular pump, and is configured so that the inside of the chamber 2 can be evacuated to a predetermined reduced pressure atmosphere. Further, a substrate loading / unloading port 33 and a gate valve 34 for opening and closing the substrate loading / unloading port 33 are provided on the side wall of the chamber 2, and the load lock chamber adjacent to the substrate G with the gate valve 34 opened. (Not shown). Further, a liner 35 for protecting the chamber 2 is attached to the inside of the side wall of the chamber 2 with screws.

  Each component of the plasma etching apparatus 1 is controlled by the control unit 100. The control unit 100 has a program storage unit that stores a control program for performing predetermined control, a controller that actually controls each component unit based on the control program, and a user interface including a keyboard and a display. is doing.

  Specifically, the control unit 100 controls the timing of application of high-frequency power from a high-frequency power source, control of these powers, control of gas supply and exhaust, drive control of gate valves, elevating pins, etc., electrostatic adsorption fixing Control such as voltage supply control to the unit.

Next, the processing operation in the plasma etching apparatus 1 configured as described above will be described.
First, a glass substrate G, which is a substrate to be processed, is carried into the chamber 2 through a substrate loading / unloading port 33 by a transfer arm (not shown) from a transfer chamber (not shown) provided adjacent to the chamber 2. And it mounts on the mounting base 3, ie, the surface of the mounting board 3b. When the glass substrate G is placed, the elevating pins 13 first project upward and are positioned at the support position, and the glass substrate G on the transfer arm is transferred onto the elevating pins 13. Then, the raising / lowering pin 13 is lowered | hung and the glass substrate G is mounted on the mounting plate 3b.

  Thereafter, the gate valve 33 is closed, and the inside of the chamber 2 is evacuated to a predetermined vacuum level by the exhaust device 32. Then, the valve 27 is opened, the processing gas from the processing gas supply source 29 is adjusted by the mass flow controller 28, and the internal space 21 of the shower head 20 passes through the processing gas supply pipe 26 and the gas inlet 25. Then, the liquid is uniformly discharged to the substrate G through the discharge holes 22 of the shower plate 20b, and the inside of the chamber 2 is controlled to a predetermined pressure while adjusting the exhaust amount.

  In this state, high frequency power is applied from the high frequency power source 17 to the mounting table 3 through the matching unit 16 to generate a high frequency electric field between the mounting table 3 as the lower electrode and the shower head 20 as the upper electrode, Gas plasma is generated, and the glass substrate G is etched by this plasma.

  After performing the etching process in this manner, the application of the high frequency power from the high frequency power supply 17 is stopped, the introduction of the processing gas is stopped, the pressure in the chamber 2 is adjusted to a predetermined pressure, and the glass is raised by the lifting pins 13. The substrate G is raised to the support position. In this state, the gate valve 22 is opened, a transfer arm (not shown) is inserted into the chamber 2, and the glass substrate G on the lift pins 13 is transferred to the transfer arm. Then, the glass substrate G is unloaded from the chamber 2 through the substrate loading / unloading port 33 to a transfer chamber (not shown) provided adjacent thereto. The above process is repeated for a plurality of glass substrates G.

  In the above processing, if the etching process is repeated, adhesion of reaction products or the like to the chamber inner member and wear due to plasma occur. Therefore, the chamber inner member is periodically removed and replaced for cleaning maintenance. A typical example of such a replaceable chamber internal member is a mounting plate 3b.

  Conventionally, the mounting plate 3b is fixed to the base material 3a with a large number of screws, and when replacing, it is necessary to attach and remove a large number of screws. However, since the mounting plate 3b is also increased in size with the increase in the size of the apparatus, the number of screws is extremely large, and the time required for removing and mounting the mounting plate 3b is extremely long. It was.

  On the other hand, in this embodiment, by connecting the switch 10 to the DC power supply 11 side, the mounting plate 3b is attracted and fixed to the substrate 3a by an electrostatic force such as a Coulomb force by the electrostatic fixing unit 40. When removing the mounting plate 3b, the mounting plate 3b can be easily removed by switching the switch 10 to the ground circuit 12 side to turn off the voltage. A screw is unnecessary, and even if a screw is necessary, it may be an auxiliary one, and the replacement work of the mounting plate 3b can be performed in a much shorter time than before, and productivity is hardly lowered. .

  In actual operation, in order to prevent troubles such as displacement of the mounting plate 3b when the suction state cannot be maintained due to power interruption or the like, the minimum number of points required for the mounting plate 3b on the base material 3a It is preferable to take protective measures such as fixing with screws.

  In addition, when the mounting plate 3b after the electrostatic adsorption is released is removed, the mounting plate 3b is charged, so that a grounding jig is contacted in order to earth (static discharge by grounding) the mounting plate 3b. You may use assistance, such as letting.

  Further, a three-position switch 10 'as shown in FIG. The switch 10 'is a three-position switch having a floating position 10c in addition to the position 10a on the DC power supply 11 side and the position 10b on the ground circuit 12 side. The suction state can be maintained by setting the switch 10 to the floating position 10c to be in a floating state. However, even in such a case, it is preferable to perform screw fixing with a minimum number of points from the viewpoint of safety.

Next, a second embodiment of the present invention will be described.
FIG. 4 is a cross-sectional view showing a plasma etching apparatus according to the second embodiment of the present invention. The plasma etching apparatus 1 ′ of this embodiment is characterized by a shower head 20. Other configurations are the same as those in the plasma etching apparatus 1 in the first embodiment except that the mounting table 3 is not provided with the electrostatic fixing portion 40. Therefore, the same components are denoted by the same reference numerals. The description is omitted.

  In the present embodiment, the shower head 20 has a two-layer shower plate 20b '. That is, here, the shower plate 20b ′ has a support portion 201 and a surface portion 202 as shown in FIG. The surface portion 202 is provided on the lower surface side, and is configured as an extremely thin plate having a thickness of 5 mm or less. The gas discharge hole 22 has a large diameter portion 22 a in the support portion 201 and a small diameter portion 22 b in the surface portion 202.

  Conventionally, the shower plate has been configured as an integral part. However, considering that it is a replacement part, the replacement cost is extremely high due to processing costs and abnormal discharge.

  In order to prevent such inconvenience, in the present embodiment, as described above, the shower plate 20b ′ having a two-layer structure of the support portion 201 and the surface portion 202 is provided. The gas discharge hole 22 has a small diameter portion 22b smaller than 1 mm compared to the large diameter portion 22a in order to prevent the plasma from entering the inside. Conventionally, the gas discharge holes 22 have to be formed by drilling. However, since they are divided and the surface portion 202 is a thin plate, it can be formed by punching and the processing cost can be reduced. Further, when damaged, only the surface portion 202 can be used as a replacement part. In addition, since the parts to be replaced can be light, the replacement time can be extremely shortened.

Next, a third embodiment of the present invention will be described.
FIG. 6 is a sectional view showing a plasma etching apparatus according to the third embodiment of the present invention. The plasma etching apparatus 1 ″ of the present embodiment electrostatically fixes and fixes the liner 35 and the shower plate 20b ′ of the second embodiment, as well as the mounting plate 3b of the first embodiment, as replaceable chamber inner members. Since the other configuration is substantially the same as that of the plasma etching apparatus 1 in the first embodiment, the same components are denoted by the same reference numerals and description thereof is omitted. .

  In the present embodiment, the shower head 20 includes a shower plate 20b ′ having a support portion 201 and a surface portion 202 as shown in FIG. 5 as in the second embodiment. The surface portion 202 is provided on the lower surface side, and is configured as an extremely thin plate having a thickness of 5 mm or less. The gas discharge hole 22 has a large diameter portion 22 a in the support portion 201 and a small diameter portion 22 b in the surface portion 202.

  The support unit 201 is provided with an electrostatic adsorption fixing unit 50. The electrostatic chucking fixing part 50 is provided in the vicinity of the lower surface of the support part 201 over a plurality of electrode pads 51 (only four are shown in the figure) provided over the entire surface and around the electrode pads. And an insulating member 52. Further, a passage 53 communicating with the outside is formed in a portion immediately above the electrode pad 51 of the support portion 201, and the insulating member 52 is also formed around the passage 53. A power supply line 54 is connected to the electrode pad 51 from the outside through a passage 53. A switch 55 is interposed in the power supply line 54, and this switch 55 is connected to either a DC power source 56 or a ground circuit 57 including a resistor 57a. By connecting the switch 55 to the DC power source 56 side, a DC voltage is applied to the electrode pad 51, and the surface portion 202 is attracted and fixed to the support portion 201 by electrostatic force (Coulomb force). Further, by connecting the switch 55 to the ground circuit 57 side, the voltage is turned off, and the power supply line 54 is grounded via the ground circuit 57, whereby the electrode pad 51 is neutralized and the adsorption is released. It has become.

  In addition, an electrostatic adsorption fixing unit 60 is provided on the side wall of the chamber 2. The electrostatic chucking fixing part 60 includes a plurality of electrode pads 61 (only two are shown in the figure) provided in the vicinity of the surface along the circumferential direction of the side wall of the chamber 2, and an insulating member 62 provided around the electrode pads. have. Further, a passage 63 communicating with the outside is formed in the outer portion of the electrode pad 61 on the side wall of the chamber 2, and the insulating member 62 is also formed around the passage 63. A power supply line 64 is connected to the electrode pad 61 from the outside through a passage 63. A switch 65 is interposed in the power supply line 64, and this switch 65 is connected to either a DC power supply 66 or a ground circuit 67 including a resistor 67a. By connecting the switch 65 to the DC power supply 66 side, a DC voltage is applied to the electrode pad 61, and the liner 35 is adsorbed and fixed to the side wall of the chamber 2 by electrostatic force (Coulomb force). Further, by connecting the switch 65 to the ground circuit 67 side, the voltage is turned off, and the feed line 64 is grounded via the ground circuit 67, so that the electrode pad 61 is neutralized and the adsorption is released. It has become.

  In the present embodiment, in addition to the mounting plate 3b of the first embodiment, the surface portion 202 of the shower plate 20b ′ and the liner 35 are replaced chamber inner members that are electrostatically adsorbed and fixed. Since the removal and attachment are unnecessary, or even if necessary, the auxiliary member can be replaced, and therefore, the replacement work of the in-chamber member can be further shortened.

  Also in the present embodiment, as in the first embodiment, as shown in FIG. 2, the plurality of electrode pads 6 of the electrostatic adsorption fixing unit 40 can be supplied with power from one DC power source, The fixing unit 50 may be supplied in the same manner, and a plurality of electrode pads 56 may be supplied with power from one DC power source, and the electrostatic adsorption fixing unit 60 may be similarly supplied with one DC power source for a plurality of electrode pads 66. You may make it supply electric power from.

  In actual operation, the mounting plate 3b is fixed to the base material 3a with a minimum number of screws as in the first embodiment, and the surface portion 202 of the shower head 20 and the liner 35 are dropped. In order to prevent troubles, it is preferable to take protective measures to fix them to the support portion 201 and the side wall of the chamber 2 with a minimum number of screws.

  In addition, in the case where the O-ring is used on the back surface of the shower head 20 or the like, when the screw is fixed to prevent the fall as described above, the screw is used only for preventing the fall, and the sealing performance by the O-ring is crushed. It may be ensured by electrostatic adsorption.

  Further, as in the first embodiment, in the electrostatic chucking fixing portion 40, a three-position switch 10 'as shown in FIG. The switch 55 of the fixing unit 50 and the switch 65 of the electrostatic chucking fixing unit 60 can be replaced with a three-position switch having the same configuration.

  The shower plate itself is heavy, and in order to be sufficiently fixed by electrostatic attraction, an extremely large electrostatic attraction force is required, which may make it difficult to fix the electrostatic attraction. Since the plate 2b 'is divided into two layers and the surface portion 202 configured as an ultrathin plate is adsorbed by the electrostatic adsorption fixing unit 50, it can be sufficiently adsorbed and fixed by electrostatic adsorption.

In addition, this invention is not limited to the said embodiment, A various deformation | transformation is possible.
For example, in the above embodiment, the chamber inner member (process container inner member) to be electrostatically attracted and fixed is exemplified by the mounting plate on the surface of the mounting table, the surface portion constituting the surface of the shower plate, and the liner provided on the side wall of the chamber. Although demonstrated, it is not restricted to these, Electrostatic adsorption can also be applied to the other chamber internal member, and at least 1 type of the chamber internal member should just be electrostatic adsorption fixed. In the above embodiment, an example in which the present invention is applied to an RIE type capacitively coupled parallel plate plasma etching apparatus that applies high-frequency power to the lower electrode has been described. The present invention can be applied to other plasma processing apparatuses, and may be a type that supplies high-frequency power to the upper electrode, and is not limited to a capacitive coupling type but may be an inductive coupling type. Furthermore, the present invention is not limited to plasma processing, and can be applied to other processing apparatuses.

  Moreover, although the case where the glass substrate G for FPD was applied as a to-be-processed substrate was shown in the said embodiment, not only this but another board | substrate, such as a semiconductor wafer, may be sufficient.

1 is a cross-sectional view showing a plasma etching apparatus according to a first embodiment of the present invention. The schematic diagram which shows the other example of the electric power feeding system to several electrode pads. The figure which shows the other example of the switch for turning on / off the DC voltage for electrostatic attraction. Sectional drawing which shows the plasma etching apparatus which concerns on the 2nd Embodiment of this invention. Sectional drawing which expands and shows the shower head of the plasma etching apparatus of FIG. Sectional drawing which shows the plasma etching apparatus which concerns on the 3rd Embodiment of this invention.

Explanation of symbols

1, 1 ', 1 "; plasma etching equipment (substrate processing equipment)
2; chamber (processing vessel)
3; mounting base 3a; base material 3b; mounting plate 4; support member 5; shield ring 6, 51, 61; electrode pad 7, 52, 62; insulating member 9, 54, 64; Switch 11, 56, 66; DC power supply 17; high frequency power supply 20; shower head 20a; body 20b, 20b '; shower plate 22; gas discharge hole 22a; large diameter portion 22b; 60; Electrostatic adsorption fixing part 100; Control part 201; Support part 202; Surface part G; Glass substrate

Claims (10)

A processing container for containing a substrate;
A replaceable processing container internal member disposed in the processing container;
A processing mechanism for performing a predetermined process on the substrate in the processing chamber;
At least one of the processing container inner members is attached by electrostatic adsorption.   2. The substrate processing apparatus according to claim 1, wherein the replaceable processing container inner member attached by the electrostatic adsorption is a mounting portion constituting an upper surface of a mounting table on which a substrate is mounted. .   The replaceable processing container inner member attached by the electrostatic adsorption has a large number of gas discharge holes constituting a lower surface of a shower head for discharging a processing gas for processing a substrate into the processing container in a shower shape. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is a part or all of a shower plate having a surface.   The substrate processing apparatus according to claim 1, wherein the replaceable processing container inner member attached by electrostatic adsorption is a liner member provided on an inner surface of the processing container.   5. The substrate processing apparatus according to claim 1, further comprising a plasma generation mechanism configured to generate plasma of the processing gas in the processing container. A processing container for containing a substrate;
A mounting table for mounting a substrate in the processing container;
A shower head provided opposite to the mounting table, for discharging a processing gas;
A plasma generation mechanism for generating plasma of the processing gas in the processing container,
The mounting table has a mounting portion as a replaceable member on the upper surface thereof,
The shower head has a shower plate formed with gas discharge holes on its lower surface, and a part or all of the shower plate is a replaceable member,
A liner as a replaceable member is attached to the side wall of the processing vessel,
At least one of the replaceable members is attached by electrostatic adsorption.   The substrate processing apparatus according to claim 6, wherein the shower plate includes a main body and a thin plate member provided on a lower surface side of the main body, and the thin plate member is a replaceable member.   The substrate processing apparatus according to claim 7, wherein the gas discharge hole formed in the shower plate has a large diameter portion in the main body and a small diameter portion in the thin plate member. A processing container for containing a substrate;
A mounting table for mounting a substrate in the processing container;
A shower head provided opposite to the mounting table, for discharging a processing gas;
A plasma generation mechanism for generating plasma of the processing gas in the processing container,
The shower head includes a shower plate having a large number of gas discharge holes, and the shower plate includes a main body and a replaceable thin plate member provided on a lower surface side of the main body. apparatus.   10. The substrate processing apparatus according to claim 9, wherein the gas discharge hole formed in the shower plate has a large diameter portion in the main body and a small diameter portion in the thin plate member.

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