JP6010433B2 - Substrate mounting table and substrate processing apparatus - Google Patents

Substrate mounting table and substrate processing apparatus Download PDF

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JP6010433B2
JP6010433B2 JP2012250809A JP2012250809A JP6010433B2 JP 6010433 B2 JP6010433 B2 JP 6010433B2 JP 2012250809 A JP2012250809 A JP 2012250809A JP 2012250809 A JP2012250809 A JP 2012250809A JP 6010433 B2 JP6010433 B2 JP 6010433B2
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substrate
mounting table
processing
processed
peripheral
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JP2014099519A (en
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敦城 古屋
敦城 古屋
芳彦 佐々木
芳彦 佐々木
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

Description

本発明は、基板を載置する基板載置台およびそれを用いた基板処理装置に関する。   The present invention relates to a substrate mounting table on which a substrate is mounted and a substrate processing apparatus using the same.

フラットパネルディスプレイ（ＦＰＤ）や半導体デバイスの製造過程においては、被処理基板に対して、エッチング、スパッタリング、ＣＶＤ（化学気相成長）等のプラズマ処理が多用されている。   In the manufacturing process of flat panel displays (FPD) and semiconductor devices, plasma processing such as etching, sputtering, and CVD (chemical vapor deposition) is frequently used for a substrate to be processed.

このようなプラズマ処理を施すプラズマ処理装置としては、例えば、チャンバー内に一対の平行平板電極（上部および下部電極）を配置し、下部電極として機能する基板載置台に被処理基板を載置し、処理ガスをチャンバー内に導入するとともに、電極の少なくとも一方に高周波を印加して電極間に高周波電界を形成し、この高周波電界により処理ガスのプラズマを形成して被処理基板に対してプラズマ処理を施すものが知られている。   As a plasma processing apparatus that performs such plasma processing, for example, a pair of parallel plate electrodes (upper and lower electrodes) are disposed in a chamber, and a substrate to be processed is mounted on a substrate mounting table that functions as a lower electrode. A processing gas is introduced into the chamber, a high frequency electric field is applied to at least one of the electrodes to form a high frequency electric field between the electrodes, and a plasma of the processing gas is formed by the high frequency electric field to perform plasma processing on the substrate to be processed. What to give is known.

このようなプラズマ処理装置においては、下部電極としての基板載置台に載置された被処理基板の温度がプラズマの熱により不均一に上昇すると、プラズマ処理の面内均一性の悪化やレジスト焼け等の製品不良につながる。このため、被処理基板が均一な温度分布となるように、基板載置台を温調するとともに、基板載置台と基板の間の空間にガスを満たして基板載置台の熱を伝達するようにしている。また、その空間の圧力を保つため、基板載置台の上面の外周部に、被処理基板の周縁部が載置されて密着される土手を設け、さらに、被処理基板の浮き、ずれを防ぐため、基板載置台の上面に静電チャック（ＥＳＣ）を形成して被処理基板を静電吸着により固定している（例えば特許文献１）。   In such a plasma processing apparatus, if the temperature of the substrate to be processed mounted on the substrate mounting table as the lower electrode rises unevenly due to the heat of the plasma, the in-plane uniformity of the plasma processing deteriorates, the resist burns, etc. Lead to product defects. For this reason, the temperature of the substrate mounting table is adjusted so that the substrate to be processed has a uniform temperature distribution, and the space between the substrate mounting table and the substrate is filled with a gas to transmit the heat of the substrate mounting table. Yes. In addition, in order to maintain the pressure in the space, a bank is provided on the outer peripheral portion of the upper surface of the substrate mounting table so that the peripheral edge of the substrate to be processed is placed and in close contact with the substrate mounting table. An electrostatic chuck (ESC) is formed on the upper surface of the substrate mounting table, and the substrate to be processed is fixed by electrostatic adsorption (for example, Patent Document 1).

特開２００８−８４９２４号公報JP 2008-84924 A

ところで、静電チャックは、絶縁部材の内部に設けられた吸着電極に直流電圧を印加することにより、吸着電極に存在する電荷とチャンバー内のプラズマの電荷との間のクーロン力により被処理基板を基板載置台表面に吸着固定するものであるが、例えば導電性副生成物が基板載置台（下部電極）の表面に付着していると、被処理基板と基板載置台との間に電子が入り込みやすく、電子が入り込むと、そのマイナス電荷と吸着電極のプラス電荷とが結合し、静電チャックの電圧をオフした際に逆に被処理基板が基板載置台の土手に吸着され、その後除電プロセスを実行しても電荷の除去が不十分となる。また、副生成物が土手の表面に付着することで、被処理基板と土手との間の隙間が副生成物で埋まり、基板と基板載置台の密着度が過度となり、被処理基板の吸着が一層助長される。このため、除電後に被処理基板をリフトアップして基板載置台から剥離する際に、吸着現象による基板の割れ、および残存する電荷や剥離帯電による素子の静電破壊（ＥＳＤ）発生の原因となってしまう。   By the way, the electrostatic chuck applies a DC voltage to the suction electrode provided inside the insulating member, and thereby the substrate to be processed is caused by the Coulomb force between the charge existing in the suction electrode and the charge of the plasma in the chamber. For example, if conductive by-products adhere to the surface of the substrate mounting table (lower electrode), electrons enter between the substrate to be processed and the substrate mounting table. When electrons enter, the negative charge and the positive charge of the adsorption electrode combine, and when the electrostatic chuck voltage is turned off, the substrate to be processed is adsorbed on the bank of the substrate mounting table, and then the static elimination process is performed. Even if it is executed, charge removal is insufficient. In addition, by-products adhere to the surface of the bank, the gap between the substrate to be processed and the bank is filled with the by-product, the degree of adhesion between the substrate and the substrate mounting table becomes excessive, and the substrate to be processed is adsorbed. Further encouraged. For this reason, when the substrate to be processed is lifted up after being neutralized and peeled off from the substrate mounting table, it may cause cracking of the substrate due to an adsorption phenomenon, and electrostatic breakdown (ESD) of the element due to residual charge or peeling charging. End up.

本発明はかかる事情に鑑みてなされたものであって、被処理基板を剥離する際に被処理基板の吸着現象による基板の割れ、および残存する電荷や剥離帯電による素子の静電破壊が生じ難い基板載置台およびそれを用いた基板処理装置を提供することを課題とする。   The present invention has been made in view of such circumstances, and when the substrate to be processed is peeled off, the substrate is hardly cracked due to the adsorption phenomenon of the substrate to be processed, and the electrostatic breakdown of the element due to the remaining charge or peeling charging is unlikely to occur. It is an object to provide a substrate mounting table and a substrate processing apparatus using the same.

上記課題を解決するため、本発明の第１の観点では、処理容器内で処理ガスにより被処理基板に処理を施す基板処理装置において基板を載置する基板載置台であって、被処理基板を載置する載置面を有する上部絶縁部材内に直流電圧が印加される吸着電極が設けられて構成された静電チャックを備えた載置台本体と、前記載置台本体を温調する温調機構と、前記載置台本体に被処理基板が載置されている際に、被処理基板の裏面側に伝熱ガスを供給する伝熱ガス供給機構とを具備し、前記上部絶縁部材は、被処理基板の周縁部が載置される周縁載置部を有し、前記上部絶縁部材の前記周縁載置部より内側の内側部分は、その上面が前記周縁載置部よりも低く形成されており、被処理基板が載置された際に、被処理基板と前記内側部分の上面との間に前記伝熱ガスが供給される空間を有し、前記吸着電極は、前記上部絶縁部材の前記周縁載置部に存在しないように設けられ、前記周縁載置部は、前記処理ガスに起因してその上面に付着する副生成物がその上に載置された被処理基板の裏面に密着しないように形成された凹部を有しており、前記凹部は、前記周縁載置部の上面の周方向に沿って設けられた複数の溝であることを特徴とする基板載置台を提供する。 In order to solve the above problems, according to a first aspect of the present invention, there is provided a substrate mounting table for mounting a substrate in a substrate processing apparatus for processing a substrate to be processed with a processing gas in a processing container. A mounting base body provided with an electrostatic chuck configured to be provided with an adsorption electrode to which a DC voltage is applied in an upper insulating member having a mounting surface to be mounted, and a temperature control mechanism for controlling the temperature of the mounting base body described above And a heat transfer gas supply mechanism for supplying heat transfer gas to the back side of the substrate to be processed when the substrate to be processed is placed on the mounting table main body, and the upper insulating member is to be processed The inner peripheral portion of the upper insulating member inside the peripheral mounting portion has a top surface formed lower than the peripheral mounting portion. When the substrate to be processed is placed, the substrate to be processed and the upper surface of the inner portion There is a space to which the heat transfer gas is supplied, and the adsorption electrode is provided so as not to exist on the peripheral mounting portion of the upper insulating member, and the peripheral mounting portion is caused by the processing gas. The by-product attached to the upper surface has a recess formed so as not to adhere to the back surface of the substrate to be processed placed thereon, and the recess is formed on the upper surface of the peripheral mounting portion. Provided is a substrate mounting table which is a plurality of grooves provided along a circumferential direction .

上記第１の観点の基板載置台において、前記上部絶縁部材の前記内側部分から前記周縁載置部と同じ高さ位置まで延び、その上面で被処理基板を支持する基板支持部をさらに具備してもよい。   The substrate mounting table according to the first aspect further includes a substrate support portion that extends from the inner portion of the upper insulating member to the same height position as the peripheral mounting portion and supports the substrate to be processed on the upper surface thereof. Also good.

前記複数の溝は、均等な間隔および幅で形成されることが好ましい。前記周縁載置部の溝を含まない部分の幅は５ｍｍ以上であることが好ましい。 Before SL plurality of grooves are preferably formed at equal intervals and widths. It is preferable that the width of the part not including the groove of the peripheral placement part is 5 mm or more.

前記載置台本体は、導電体部分を有し、前記導電体部分にプラズマ生成用の高周波電力が供給されてもよい。   The mounting table main body may have a conductor portion, and high frequency power for plasma generation may be supplied to the conductor portion.

本発明の第２の観点では、被処理基板に対して処理を施すための処理容器と、前記処理容器内で基板を載置する基板載置台と、前記処理容器内に処理ガスを供給する処理ガス供給機構と、前記処理容器内を排気する排気機構とを具備し、前記基板載置台は、上記第１の観点の構成を有することを特徴とする基板処理装置を提供する。   In the second aspect of the present invention, a processing container for processing a substrate to be processed, a substrate mounting table for mounting the substrate in the processing container, and a process of supplying a processing gas into the processing container Provided is a substrate processing apparatus comprising a gas supply mechanism and an exhaust mechanism for exhausting the inside of the processing container, wherein the substrate mounting table has the configuration of the first aspect.

上記第２の観点の基板処理装置において、前記基板載置台の前記載置台本体は、導電体部分を有し、前記導電体部分にプラズマ生成用の高周波電力を供給する高周波電源が接続され、前記処理ガス供給機構は、前記処理容器の上部に前記基板載置台と対向して設けられた、前記処理ガスを前記処理容器内に吐出するためのシャワーヘッドを有し、前記基板載置台と前記シャワーヘッドは一対の平行平板電極を構成し、前記高周波電源から供給された高周波電力により前記処理容器内に処理ガスのプラズマが形成される構成とすることができる。   In the substrate processing apparatus according to the second aspect, the mounting table main body of the substrate mounting table has a conductor portion, and a high-frequency power source for supplying high-frequency power for plasma generation to the conductor portion is connected, The processing gas supply mechanism has a shower head provided on an upper portion of the processing container so as to face the substrate mounting table, and discharges the processing gas into the processing container, and the substrate mounting table and the shower The head constitutes a pair of parallel plate electrodes, and plasma of the processing gas can be formed in the processing container by the high frequency power supplied from the high frequency power source.

本発明によれば、静電チャックの吸着電極は、上部絶縁部材の周縁載置部に存在しないように設けられ、かつ周縁載置部は、処理ガスに起因してその上面に付着する副生成物がその上に載置された被処理基板の裏面に密着しないように形成された凹部を有している。このため、周縁載置部の導電性の副生成物に電荷が回りこんでも、それに結合する電荷が存在せず、また凹部の存在により周縁載置部と被処理基板との間の吸着力を低減することができるので、除電後に被処理基板をリフトアップして基板載置台から剥離する際に、吸着現象による被処理基板の割れ、および残存する電荷や剥離帯電による素子の静電破壊（ＥＳＤ）発生を防止することができる。   According to the present invention, the attracting electrode of the electrostatic chuck is provided so as not to exist on the peripheral mounting portion of the upper insulating member, and the peripheral mounting portion is a by-product that adheres to the upper surface due to the processing gas. It has a recess formed so that an object does not adhere to the back surface of the substrate to be processed placed thereon. For this reason, even if electric charges wrap around the conductive by-product of the peripheral mounting portion, there is no electric charge that binds to the conductive by-product, and the presence of the concave portion increases the adsorption force between the peripheral mounting portion and the substrate to be processed. Therefore, when the substrate to be processed is lifted up after being neutralized and separated from the substrate mounting table, the substrate to be processed is cracked due to an adsorption phenomenon, and the electrostatic breakdown (ESD) of the device due to residual charge or peeling electrification ) Can be prevented.

本発明の一実施形態に係る基板処理装置の一例であるプラズマエッチング装置を示す断面図である。It is sectional drawing which shows the plasma etching apparatus which is an example of the substrate processing apparatus which concerns on one Embodiment of this invention. 図１のプラズマエッチング装置における基板載置台を示す断面図である。It is sectional drawing which shows the substrate mounting base in the plasma etching apparatus of FIG. 図１のプラズマエッチング装置における基板載置台の一部分を示す平面図である。It is a top view which shows a part of substrate mounting base in the plasma etching apparatus of FIG. 従来の基板載置台を示す断面図である。It is sectional drawing which shows the conventional board | substrate mounting base. 従来の基板載置台において、静電チャックにより基板を吸着した状態と吸着を解除した状態を示す模式図である。In the conventional board | substrate mounting base, it is a schematic diagram which shows the state which adsorb | sucked the board | substrate with the electrostatic chuck, and the state which cancelled | released adsorption | suction. 従来の基板載置台において、土手に導電性の副生成物が付着した状態で静電チャックにより基板を吸着した状態と吸着を解除した状態を示す模式図である。In the conventional board | substrate mounting base, it is a schematic diagram which shows the state which adsorb | sucked the board | substrate with the electrostatic chuck in the state which the electroconductive by-product adhered to the bank, and the state which canceled adsorption | suction. 従来の基板載置台において、土手に基板を載置した状態を示す図であり、（ａ）は土手と基板の間の隙間が形成されている状態を示し、（ｂ）は隙間が副生成物で埋まった状態を示す。In the conventional board | substrate mounting base, it is a figure which shows the state which mounted the board | substrate on the bank, (a) shows the state in which the clearance gap between a bank and a board | substrate is formed, (b) shows a clearance gap by-product. The state filled with is shown. 本実施形態の基板載置台において、土手に導電性の副生成物が付着した状態で静電チャックにより基板を吸着した状態と吸着を解除した状態を示す模式図である。In the substrate mounting base of this embodiment, it is a schematic diagram which shows the state which adsorb | sucked the board | substrate with the electrostatic chuck in the state which the electroconductive by-product adhered to the bank, and the state which canceled adsorption | suction. 溝を形成した土手に基板を載置した状態を示す図である。It is a figure which shows the state which mounted the board | substrate on the bank in which the groove | channel was formed.

以下、添付図面を参照して本発明の実施形態について説明する。
図１は、本発明の一実施形態に係る基板処理装置の一例であるプラズマエッチング装置を示す断面図、図２は図１のプラズマエッチング装置における基板載置台を示す断面図、図３は基板載置台の一部分を示す平面図である。 Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
1 is a cross-sectional view showing a plasma etching apparatus as an example of a substrate processing apparatus according to an embodiment of the present invention, FIG. 2 is a cross-sectional view showing a substrate mounting table in the plasma etching apparatus of FIG. 1, and FIG. It is a top view which shows a part of mounting stand.

図１に示すように、このプラズマエッチング装置１は、ＦＰＤ用のガラス基板（以下、単に「基板」と記す）Ｇに対してエッチングを行う容量結合型平行平板プラズマエッチング装置として構成されている。ＦＰＤとしては、液晶ディスプレイ（ＬＣＤ）、エレクトロルミネセンス（Electro Luminescence；ＥＬ）ディスプレイ、プラズマディスプレイパネル（ＰＤＰ）等が例示される。プラズマエッチング装置１は、被処理基板である基板Ｇを収容する処理容器としてのチャンバー２を備えている。チャンバー２は、例えば、表面がアルマイト処理（陽極酸化処理）されたアルミニウムからなり、基板Ｇの形状に対応して四角筒形状に形成されている。   As shown in FIG. 1, the plasma etching apparatus 1 is configured as a capacitively coupled parallel plate plasma etching apparatus that performs etching on a glass substrate (hereinafter simply referred to as “substrate”) G for FPD. Examples of the FPD include a liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display panel (PDP), and the like. The plasma etching apparatus 1 includes a chamber 2 as a processing container that accommodates a substrate G that is a substrate to be processed. The chamber 2 is made of, for example, aluminum whose surface is anodized (anodized), and is formed in a square tube shape corresponding to the shape of the substrate G.

チャンバー２内の底壁には、基板Ｇを載置するとともに、下部電極として機能する基板載置台４が設けられている。基板載置台４の詳細な構造は後述する。   On the bottom wall in the chamber 2, there is provided a substrate mounting table 4 for mounting the substrate G and functioning as a lower electrode. The detailed structure of the substrate mounting table 4 will be described later.

チャンバー２の上部または上壁には、チャンバー２内に処理ガスを供給するとともに上部電極として機能するシャワーヘッド１１が、基板載置台４と対向するように設けられている。シャワーヘッド１１は、内部に処理ガスを拡散させるガス拡散空間１２が形成されているとともに、下面または基板載置台４との対向面に処理ガスを吐出する複数の吐出孔１３が形成されている。このシャワーヘッド１１は接地されており、基板載置台４とともに一対の平行平板電極を構成している。   A shower head 11 that supplies a processing gas into the chamber 2 and functions as an upper electrode is provided on the upper or upper wall of the chamber 2 so as to face the substrate mounting table 4. In the shower head 11, a gas diffusion space 12 for diffusing the processing gas is formed therein, and a plurality of discharge holes 13 for discharging the processing gas are formed on the lower surface or the surface facing the substrate mounting table 4. The shower head 11 is grounded, and constitutes a pair of parallel plate electrodes together with the substrate mounting table 4.

シャワーヘッド１１の上面にはガス導入口１４が設けられ、このガス導入口１４には、処理ガス供給管１５が接続されており、この処理ガス供給管１５には、バルブ１６およびマスフローコントローラ１７を介して、処理ガス供給源１８が接続されている。処理ガス供給源１８からは、エッチングのための処理ガスが供給される。処理ガスとしては、ハロゲン系のガス、Ｏ２ガス、Ａｒガス等、通常この分野で用いられるガスを用いることができる。 A gas inlet 14 is provided on the upper surface of the shower head 11, and a processing gas supply pipe 15 is connected to the gas inlet 14. A valve 16 and a mass flow controller 17 are connected to the processing gas supply pipe 15. A processing gas supply source 18 is connected to the via. A processing gas for etching is supplied from the processing gas supply source 18. As the processing gas, a gas usually used in this field, such as a halogen-based gas, an O 2 gas, or an Ar gas, can be used.

チャンバー２の底壁には排気管１９が接続されており、この排気管１９には排気装置２０が接続され、図示しない圧力調整弁が設けられている。排気装置２０はターボ分子ポンプなどの真空ポンプを備えており、これによりチャンバー２内を排気して所定の減圧雰囲気まで真空引き可能なように構成されている。チャンバー２の側壁には、基板Ｇを搬入出するための搬入出口２１が形成されているとともに、この搬入出口２１を開閉するゲートバルブ２２が設けられており、搬入出口２１の開放時に、図示しない搬送手段によって基板Ｇがチャンバー２内外に搬入出されるように構成されている。   An exhaust pipe 19 is connected to the bottom wall of the chamber 2, an exhaust device 20 is connected to the exhaust pipe 19, and a pressure adjusting valve (not shown) is provided. The exhaust device 20 includes a vacuum pump such as a turbo molecular pump, and is configured to be able to evacuate the chamber 2 to a predetermined reduced pressure atmosphere. A loading / unloading port 21 for loading / unloading the substrate G is formed on the side wall of the chamber 2, and a gate valve 22 for opening / closing the loading / unloading port 21 is provided. The substrate G is carried in and out of the chamber 2 by the transfer means.

また、プラズマエッチング装置１は、プラズマエッチング装置１の各構成部を制御するためのマイクロプロセッサ（コンピュータ）を備えた制御部４０を備えている。   In addition, the plasma etching apparatus 1 includes a control unit 40 including a microprocessor (computer) for controlling each component of the plasma etching apparatus 1.

次に、基板載置台４の詳細な構造について図２，３を参照して説明する。
基板載置台４は、アルミニウム等の金属やカーボンのような導電性材料からなる基材４ａと、基材４ａとチャンバー２の底部との間に設けられた底部絶縁部材４ｂと、基材４ａの上に設けられた上部絶縁部材４ｃと、基材４ａの側壁を覆う側部絶縁部材４ｄとを有し、これらが基板Ｇの形状に対応して四角板状または柱状に形成された載置台本体を構成している。底部絶縁部材４ｂ、上部絶縁部材４ｃ、側部絶縁部材４ｄとしては、アルミナ等の絶縁性セラミックスを用いることができる。 Next, the detailed structure of the substrate mounting table 4 will be described with reference to FIGS.
The substrate mounting table 4 includes a base material 4a made of a conductive material such as a metal such as aluminum or carbon, a bottom insulating member 4b provided between the base material 4a and the bottom of the chamber 2, and a base material 4a. A mounting base body having an upper insulating member 4c provided on the side and a side insulating member 4d that covers the side wall of the base material 4a, which are formed in a square plate shape or a column shape corresponding to the shape of the substrate G Is configured. As the bottom insulating member 4b, the top insulating member 4c, and the side insulating member 4d, insulating ceramics such as alumina can be used.

基材４ａには、高周波電力を供給するための給電線２３が接続されており、この給電線２３には整合器２４および高周波電源２５が接続されている。高周波電源２５からは例えば１３．５６ＭＨｚの高周波電力が基板載置台４に供給され、これにより、基板載置台４が下部電極として機能する。また、基材４ａには、載置された基板Ｇの温度を調節するための温調手段として、冷却媒体を通流させる冷媒流路５が設けられている。   A power supply line 23 for supplying high-frequency power is connected to the base material 4a, and a matching unit 24 and a high-frequency power source 25 are connected to the power supply line 23. For example, high frequency power of 13.56 MHz is supplied from the high frequency power supply 25 to the substrate mounting table 4, whereby the substrate mounting table 4 functions as a lower electrode. Further, the base material 4a is provided with a refrigerant flow path 5 through which a cooling medium flows as temperature adjusting means for adjusting the temperature of the mounted substrate G.

基板載置台４の上部を構成する上部絶縁部材４ｃは、その上面の外周部に、基板Ｇの周縁部が載置されて密着される周縁載置部としての土手４１が形成されている。上部絶縁部材４ｃの土手４１よりも内側の内側部分４２は、その上面が土手４１の上面よりも低く形成されており、基板Ｇが載置された際に、基板Ｇと内側部分４２の上面との間に空間７が形成される。空間７には下方から伸びる伝熱ガス流路２６が接続されており、伝熱ガス流路２６の他端には伝熱ガス供給機構２７が接続されている。そして、伝熱ガス供給機構２７から伝熱ガス流路２６を介して空間７へ基板Ｇに対する熱伝達のための伝熱ガス、例えばＨｅガスが供給されるようになっている。   The upper insulating member 4c constituting the upper portion of the substrate mounting table 4 is formed with a bank 41 as a peripheral mounting portion on which the peripheral portion of the substrate G is placed and closely attached to the outer peripheral portion of the upper surface thereof. The inner portion 42 inside the bank 41 of the upper insulating member 4c has an upper surface formed lower than the upper surface of the bank 41, and when the substrate G is placed, the upper surface of the substrate G and the inner portion 42 A space 7 is formed between the two. A heat transfer gas passage 26 extending from below is connected to the space 7, and a heat transfer gas supply mechanism 27 is connected to the other end of the heat transfer gas passage 26. A heat transfer gas, for example, He gas, for transferring heat to the substrate G is supplied from the heat transfer gas supply mechanism 27 to the space 7 via the heat transfer gas flow path 26.

空間７の内部には、内側部分４２の上面から上方に伸びる複数の支持部材８が設けられている。土手４１の上面と支持部材８の上面とは同じ高さ位置を有し、土手４１の上面に周縁部が載置された基板Ｇの下面中央部を支持部材の上面で支持するようになっており、土手４１の上面と支持部材８の上面とが基板Ｇの載置面を構成している。なお、本実施形態では支持部材８が円柱状の場合を示しているが、支持部材８は、空間７の全体に伝熱ガスが供給され、基板Ｇを支持することができる限り、格子状や扁平状等、他の種々の形状を採用することができる。また、支持部材８は１個でもよい。   A plurality of support members 8 extending upward from the upper surface of the inner portion 42 are provided in the space 7. The upper surface of the bank 41 and the upper surface of the support member 8 have the same height position, and the lower surface central portion of the substrate G on which the peripheral edge is placed on the upper surface of the bank 41 is supported by the upper surface of the support member. The upper surface of the bank 41 and the upper surface of the support member 8 constitute a mounting surface for the substrate G. In this embodiment, the support member 8 has a cylindrical shape. However, the support member 8 has a lattice shape or the like as long as the heat transfer gas is supplied to the entire space 7 and can support the substrate G. Various other shapes such as a flat shape can be adopted. Further, the number of support members 8 may be one.

上部絶縁部材４ｃの内部には、基板Ｇの面内方向（すなわち水平方向）に沿って吸着電極３１が設けられており、上部絶縁部材４ｃと吸着電極３１とで基板Ｇを静電吸着するための静電チャック３０が構成されている。吸着電極３１は板状、膜状、格子状、網状等種々の形態をとることができる。また、吸着電極３１は、その端部が土手４１にかからないように設けられている。すなわち、上部絶縁部材４ｃの土手４１に対応する部分には、吸着電極３１が存在しないようになっている。吸着電極３１には、給電線３２を介して直流電源３３が接続されており、吸着電極３１に直流電圧が印加されるようになっている。吸着電極３１への給電は、スイッチ３４でオンオフ可能である。オフ状態では給電線３２は接地される。   Inside the upper insulating member 4c, an adsorption electrode 31 is provided along the in-plane direction (that is, the horizontal direction) of the substrate G, and the upper insulating member 4c and the adsorption electrode 31 electrostatically adsorb the substrate G. The electrostatic chuck 30 is configured. The adsorption electrode 31 can take various forms such as a plate, a film, a lattice, and a net. Further, the adsorption electrode 31 is provided so that the end portion does not reach the bank 41. That is, the adsorption electrode 31 does not exist in a portion corresponding to the bank 41 of the upper insulating member 4c. A DC power supply 33 is connected to the adsorption electrode 31 via a power supply line 32 so that a DC voltage is applied to the adsorption electrode 31. Power supply to the adsorption electrode 31 can be turned on / off by a switch 34. In the off state, the feeder line 32 is grounded.

土手４１の上面には、後述するように、副生成物の付着による基板Ｇと土手４１との間の吸着力を低減して過度の密着を解消する観点から、周方向に沿って１以上（本例の場合には２つ）の溝４１ａが形成されている。溝４１ａには伝熱ガスは流入しないようになっている。また、伝熱ガスの空間７からの漏れ量を低減する観点から、土手４１の幅は、溝４１ａを除いた基板が載置される部分の幅の合計で５ｍｍ以上とすることが好ましい。また、溝４１ａを２以上とし溝４１ａを均等な間隔、幅で形成することがより好ましい。溝４１ａの深さは特に制限はないが、土手４１が必要な強度を保つことができる範囲とすることが好ましい。このような溝４１ａを設けることに代えて、または溝４１ａを設けることに加えて、土手４１の表面を粗くするなど、異なる形態の凹部を形成してもよい。   On the top surface of the bank 41, as will be described later, one or more along the circumferential direction from the viewpoint of reducing the adsorption force between the substrate G and the bank 41 due to adhesion of by-products and eliminating excessive adhesion ( In this example, two) grooves 41a are formed. The heat transfer gas does not flow into the groove 41a. Further, from the viewpoint of reducing the amount of heat transfer gas leakage from the space 7, the width of the bank 41 is preferably 5 mm or more in total of the widths of the portions on which the substrate excluding the grooves 41a is placed. More preferably, the number of grooves 41a is two or more, and the grooves 41a are formed at equal intervals and widths. The depth of the groove 41a is not particularly limited, but is preferably in a range where the bank 41 can maintain a necessary strength. Instead of providing the groove 41a, or in addition to providing the groove 41a, a concave portion having a different form such as roughening the surface of the bank 41 may be formed.

基板載置台４には、基板Ｇの受け渡しを行うための複数のリフタピン（図示せず）が基板載置台４の上面（すなわち上部絶縁部材４ｃの上面）に対して突没可能に設けられており、基板Ｇの受け渡しは、基板載置台４の上面から上方に突出した状態のリフタピンに対して行われる。   A plurality of lifter pins (not shown) for transferring the substrate G are provided on the substrate mounting table 4 so as to protrude and retract with respect to the upper surface of the substrate mounting table 4 (that is, the upper surface of the upper insulating member 4c). The transfer of the substrate G is performed with respect to the lifter pins that protrude upward from the upper surface of the substrate mounting table 4.

次に、以上のように構成されたプラズマエッチング装置１における処理動作について説明する。以下の処理動作は制御部４０の制御のもとに行われる。
まず、排気装置２０によってチャンバー２内を排気して所定の圧力とし、ゲートバルブ２２を開放して搬入出口２１から図示しない搬送手段によって基板Ｇを搬入し、図示しないリフタピンを上昇させた状態でその上に基板Ｇを受け取り、リフタピンを下降させることにより基板載置台４上に基板Ｇを載置させる。搬送手段をチャンバー２から退避させた後、ゲートバルブ２２を閉じる。 Next, the processing operation in the plasma etching apparatus 1 configured as described above will be described. The following processing operations are performed under the control of the control unit 40.
First, the chamber 2 is evacuated by the exhaust device 20 to a predetermined pressure, the gate valve 22 is opened, the substrate G is loaded from the loading / unloading port 21 by the unillustrated conveying means, and the lifter pin (not illustrated) is raised. The substrate G is received and the lifter pins are lowered to place the substrate G on the substrate platform 4. After the transfer means is retracted from the chamber 2, the gate valve 22 is closed.

この状態で、圧力調整弁によりチャンバー２内の圧力を所定の真空度に調整するとともに、処理ガス供給源１８から、処理ガス供給管１５およびシャワーヘッド１１を介して処理ガスをチャンバー２内に供給する。   In this state, the pressure in the chamber 2 is adjusted to a predetermined degree of vacuum by the pressure adjusting valve, and the processing gas is supplied into the chamber 2 from the processing gas supply source 18 through the processing gas supply pipe 15 and the shower head 11. To do.

そして、高周波電源２５から整合器２４を介して基板載置台４（基材４ａ）に高周波電力を印加し、下部電極としての基板載置台と上部電極としてのシャワーヘッド１１との間に高周波電界を生じさせてチャンバー２内の処理ガスをプラズマ化させる。この際に、直流電源３３から静電チャック３０の吸着電極３１に直流電圧を印加することにより、基板Ｇはプラズマを介してクーロン力により基板載置台４に吸着固定される。   Then, high frequency power is applied from the high frequency power supply 25 to the substrate mounting table 4 (base material 4a) via the matching unit 24, and a high frequency electric field is generated between the substrate mounting table as the lower electrode and the shower head 11 as the upper electrode. The process gas in the chamber 2 is plasmatized. At this time, by applying a DC voltage from the DC power source 33 to the adsorption electrode 31 of the electrostatic chuck 30, the substrate G is adsorbed and fixed to the substrate mounting table 4 by Coulomb force via plasma.

このとき、冷媒流路５に所定の温度の冷却媒体が通流されて基板載置台４が温調され、伝熱ガス供給機構２７から伝熱ガス流路２６を介して基板Ｇ裏面側の空間７に伝熱ガスが供給され、基板載置台４の熱を基板Ｇに伝熱して基板Ｇの温度が制御される。   At this time, a cooling medium having a predetermined temperature is passed through the refrigerant flow path 5 to regulate the temperature of the substrate mounting table 4, and the space on the back side of the substrate G from the heat transfer gas supply mechanism 27 through the heat transfer gas flow path 26. 7 is supplied with heat transfer gas, and heat of the substrate mounting table 4 is transferred to the substrate G to control the temperature of the substrate G.

この状態で、基板Ｇに対してプラズマ処理、本実施形態ではプラズマエッチング処理が進行する。   In this state, plasma processing, in this embodiment, plasma etching processing proceeds on the substrate G.

処理終了後、高周波電源２５をオフにするとともに、スイッチ３４を接地側に切り替えて直流電源３３からの直流電圧の印加を停止し、基板Ｇの静電吸着を解除する。そして、リフトピン（図示せず）により基板Ｇをリフトアップし、ゲートバルブ２２を開けて搬送機構（図示せず）により処理後の基板Ｇを搬出する。   After the processing is completed, the high frequency power supply 25 is turned off and the switch 34 is switched to the ground side to stop the application of the DC voltage from the DC power supply 33 and the electrostatic adsorption of the substrate G is released. Then, the substrate G is lifted up by lift pins (not shown), the gate valve 22 is opened, and the processed substrate G is unloaded by a transfer mechanism (not shown).

ところで、図４に示すように、従来の基板載置台４′では、基板Ｇを確実に吸着するために、静電チャック３０′の吸着電極３１′を極力基板Ｇの端部に近い位置まで設けている。このような従来の基板載置台４′でも、土手４１′の表面に副生成物が存在しない場合には、図５（ａ）の吸着電極３１′に電圧を印加して吸着電極３１′の表面と基板Ｇの表面に電荷が生じて基板がＧが吸着している状態から、電圧の印加を停止すると、図５（ｂ）に示すように、吸着電極３１′から電荷が離れ、基板Ｇの表面の電荷も離れて基板Ｇの吸着が解除されるので、基板Ｇをリフトアップしたときに基板Ｇは問題なく基板載置台４′から剥離可能である。しかし、処理ガスをプラズマ化してプラズマ処理を行う場合、反応により副生成物が生じ、図６（ａ）に示すように、それが副生成物５１として基板載置台４′の表面、特に土手４１′の表面に付着する場合がある。その副生成物５１が導電性の場合には、吸着電極３１′に電圧を印加すると、副生成物５１の表面に電荷が回り込み、吸着電極３１′のその直下の部分の電荷と結合する。この状態で電圧の印加を停止しても、図６（ｂ）に示すように、土手４１′に付着した導電性の副生成物５１の表面に回り込んだ電荷が除去されず、吸着電極３１′の土手４１′に対応する部分の電荷も残存したままとなり、土手４１′の部分で基板Ｇが吸着したままとなる。   Incidentally, as shown in FIG. 4, in the conventional substrate mounting table 4 ′, the chucking electrode 31 ′ of the electrostatic chuck 30 ′ is provided as close to the end of the substrate G as possible in order to securely chuck the substrate G. ing. Even in such a conventional substrate mounting table 4 ', when no by-product is present on the surface of the bank 41', a voltage is applied to the adsorption electrode 31 'in FIG. When the application of voltage is stopped from the state in which charges are generated on the surface of the substrate G and the substrate is attracted to the substrate G, the charges are separated from the attracting electrode 31 ′ as shown in FIG. Since the surface charge is also released and the adsorption of the substrate G is released, when the substrate G is lifted up, the substrate G can be peeled off from the substrate mounting table 4 'without any problem. However, when the plasma treatment is performed by converting the processing gas into plasma, a by-product is generated by the reaction, and as shown in FIG. 6A, the by-product 51 is formed as a by-product 51 on the surface of the substrate mounting table 4 ', in particular, the bank 41. It may adhere to the surface of ′. When the by-product 51 is conductive, when a voltage is applied to the adsorption electrode 31 ′, a charge flows around the surface of the by-product 51 and combines with the charge immediately below the adsorption electrode 31 ′. Even if the application of voltage is stopped in this state, as shown in FIG. 6 (b), the charge that has wrapped around the surface of the conductive by-product 51 attached to the bank 41 'is not removed, and the adsorption electrode 31 is removed. The portion of the electric charge corresponding to the bank 41 'remains, and the substrate G remains adsorbed on the bank 41'.

また、従来は、図４に示すように、土手４１′は、静電吸着の際に基板Ｇとの間の密着性および空間７からのリークを抑制することを重視して、十分な幅をもって形成されていた。しかし、微視的に見ると、図７（ａ）に示すように土手４１′と基板Ｇとの間には隙間５２が存在し、図７（ｂ）に示すように、その隙間５２がプラズマ処理による副生成物５１で埋まると、副生成物５１の作用により基板Ｇと土手４１′との間が強固に密着してしまい、基板Ｇの吸着が一層助長される。   Conventionally, as shown in FIG. 4, the bank 41 ′ has a sufficient width with an emphasis on suppressing adhesion from the substrate G and leakage from the space 7 during electrostatic adsorption. Was formed. However, when viewed microscopically, there is a gap 52 between the bank 41 'and the substrate G as shown in FIG. 7A, and the gap 52 is plasma as shown in FIG. 7B. When filled with the by-product 51 by the treatment, the substrate G and the bank 41 ′ are firmly adhered by the action of the by-product 51, and the adsorption of the substrate G is further promoted.

従来は、このように、土手に４１′に対応する部分の電荷の残留、および副生成物５１による基板Ｇと土手４１′との間の過度の密着により、基板Ｇをリフトアップして基板載置台４′から剥離する際に、吸着現象による基板の割れ、および残存する電荷や剥離帯電による素子の静電破壊（ＥＳＤ）発生が生じていた。   Conventionally, the substrate G is lifted up and mounted on the bank by the residual charge of the portion corresponding to 41 ′ on the bank and excessive adhesion between the substrate G and the bank 41 ′ by the by-product 51. When peeling from the mounting table 4 ′, cracking of the substrate due to an adsorption phenomenon and generation of electrostatic breakdown (ESD) of the element due to residual charge or peeling charging occurred.

そこで、本実施形態では、静電チャック３０の吸着電極３１を土手４１にかからないように設けて、上部絶縁部材４ｃの土手４１に対応する部分に吸着電極３１が存在しないようにし、かつ、土手４１の上面に溝４１ａを形成している。   Therefore, in the present embodiment, the chucking electrode 31 of the electrostatic chuck 30 is provided so as not to touch the bank 41 so that the chucking electrode 31 does not exist in a portion corresponding to the bank 41 of the upper insulating member 4c. A groove 41a is formed on the upper surface of the substrate.

吸着電極３１を土手４１にかからないように設けることにより、吸着電極３１に電圧を印加して基板Ｇを吸着した際に、図８（ａ）に示すように、土手４１に形成された導電性副生成物５１の表面に電荷が回り込んでも、その直下部分に吸着電極３１が存在しないのでその電荷に結合する電荷は存在せず、電圧の印加を停止すると、図８（ｂ）に示すように、導電性の副生成物５１の表面に回り込んだ電荷が残存せず、吸着電極３１の電荷が全て除去され、電荷による基板Ｇの吸着は生じない。なお、吸着電極３１は、物理的に土手４１に対応する部分にわずかにはみ出していても、吸着電極３１に存在する電荷と土手４１（導電性副生成物）の上面に存在する電荷とが影響のある結合を形成しない限り、「吸着電極３１が土手４１に対応する部分に存在していない」状態に含まれる。   By providing the suction electrode 31 so as not to touch the bank 41, when the substrate G is sucked by applying a voltage to the suction electrode 31, the conductive sub-electrode formed on the bank 41 as shown in FIG. Even if the electric charge wraps around the surface of the product 51, the adsorption electrode 31 does not exist in the portion immediately below it, so there is no electric charge coupled to the electric charge. When the voltage application is stopped, as shown in FIG. Then, the electric charge that has flowed around the surface of the conductive by-product 51 does not remain, all the electric charge of the adsorption electrode 31 is removed, and the adsorption of the substrate G by electric charge does not occur. Even if the adsorption electrode 31 physically protrudes slightly from the portion corresponding to the bank 41, the electric charge existing on the adsorption electrode 31 and the electric charge existing on the upper surface of the bank 41 (conductive byproduct) are affected. As long as a certain bond is not formed, it is included in the state that “the adsorption electrode 31 does not exist in a portion corresponding to the bank 41”.

また、図９に示すように、土手４１の上面に溝４１ａを設けることにより、溝４１ａの部分では副生成物５１が基板Ｇには吸着しないため、土手４１の溝４１ａが存在しない部分で基板Ｇが副生成物５１により吸着しても、その面積を小さくすることができる。このため、副生成物５１の存在による基板Ｇの吸着力を低減することができる。   Further, as shown in FIG. 9, by providing the groove 41a on the upper surface of the bank 41, the by-product 51 is not adsorbed to the substrate G in the groove 41a portion, so the substrate 41 is not present in the portion of the bank 41 where the groove 41a does not exist. Even if G is adsorbed by the by-product 51, the area can be reduced. For this reason, the adsorption | suction force of the board | substrate G by presence of the by-product 51 can be reduced.

これらにより、静電吸着力が十分解除されなかったり、基板Ｇと土手４１とが副生成物により過度に吸着したりすることを回避することができ、除電後に基板Ｇをリフトアップして基板載置台４から剥離する際に、吸着現象による基板の割れ、および残存する電荷や剥離帯電による素子の静電破壊（ＥＳＤ）発生を防止することができる。   As a result, it is possible to avoid the electrostatic adsorption force from being sufficiently released or the substrate G and the bank 41 from being excessively adsorbed by the by-products. When the substrate 4 is peeled off, it is possible to prevent the substrate from cracking due to an adsorption phenomenon and the occurrence of electrostatic breakdown (ESD) of the element due to the remaining charge or peeling charging.

一方、吸着電極３１が基板載置台４の土手４１に対応する部分に存在しないことから、周縁部の基板保持力が低下して空間７からの伝熱ガスの漏れ量増大が懸念される。しかし、評価電極を用いて漏れ量調査を行った結果、吸着電極３１が土手４１に対応する部分に存在している場合が３．７７ｓｃｃｍであったのに対し、吸着電極３１が土手４１に対応する部分に存在していない場合が３．８ｓｃｃｍであり、ほとんど差が見られなかった。このことから、吸着電極３１が土手４１に対応する部分に存在していない場合にも十分な基板保持力が得られることが確認された。   On the other hand, since the adsorption electrode 31 does not exist in the portion corresponding to the bank 41 of the substrate mounting table 4, there is a concern that the substrate holding force at the peripheral portion is reduced and the amount of heat transfer gas leakage from the space 7 is increased. However, as a result of investigating the leakage amount using the evaluation electrode, the adsorption electrode 31 corresponds to the bank 41 while the adsorption electrode 31 is present at a portion corresponding to the bank 41, whereas the adsorption electrode 31 corresponds to the bank 41. 3.8 sccm was not present in the part to be observed, and almost no difference was observed. From this, it was confirmed that a sufficient substrate holding force can be obtained even when the adsorption electrode 31 does not exist in the portion corresponding to the bank 41.

また、土手４１に副生成物による吸着を低減する溝４１ａを設けることにより、基板Ｇの吸着力は多少低下するが、土手４１の基板Ｇに接触する部分の面積を確保することにより伝熱ガス漏れ量の増大等の悪影響はほとんど生じなくすることができる。   Further, by providing the bank 41 with the groove 41a for reducing the adsorption by the by-products, the adsorption force of the substrate G is somewhat reduced, but by ensuring the area of the portion of the bank 41 that contacts the substrate G, the heat transfer gas. Almost no adverse effects such as an increase in leakage can occur.

例えば、土手４１に周方向に沿って１本以上の溝４１ａを形成することにより、副生成物の付着による基板Ｇと土手４１との間の吸着力を低減することができるが、この際に、伝熱ガス漏れ量が許容範囲になるように、土手４１の溝４１ａ以外の部分の幅を確保することが好ましく、そのような観点からは、土手４１の幅は、溝４１ａを除いた基板が載置される部分の幅の合計で５ｍｍ以上とすることが好ましい。また、溝４１ａを２以上とし溝４１ａを均等な間隔、幅で形成することにより、副生成物の付着による基板Ｇと土手４１との間の吸着力を低減する効果とリークを低減する効果の両方をより高めることができるので好ましい。すなわち、溝４１ａを均等な間隔、幅で設けることにより、単に基板−土手間の吸着力を低減できるのみならず、基板−土手間に副生成物が発生しても基板Ｇに対する付着力を均等に分散することができ、局所的な基板の吸着による基板や装置の破損を防止することができる。また、溝４１ａを複数設けることにより、高圧の内側から溝に至るたびに膨張（減圧）して低圧の外側に達するため、伝熱ガスの漏れ量をより低減することができる。さらに、副生成物の付着による基板Ｇと土手４１との間の吸着力を低減するためには、このような溝４１ａを設けることに代えて、または溝４１ａを設けることに加えて、土手４１の表面を粗くするなど、副生成物の基板Ｇへの吸着を回避できる他の形態の凹部を形成することも有効である。   For example, by forming one or more grooves 41a along the circumferential direction on the bank 41, the adsorption force between the substrate G and the bank 41 due to adhesion of by-products can be reduced. It is preferable to secure the width of the portion other than the groove 41a of the bank 41 so that the heat transfer gas leakage amount is within an allowable range. From such a viewpoint, the width of the bank 41 is the substrate excluding the groove 41a. It is preferable that the total width of the portions on which the is placed is 5 mm or more. Further, by forming the grooves 41a to be equal to or greater than 2 and forming the grooves 41a at equal intervals and widths, the effect of reducing the adsorption force between the substrate G and the bank 41 due to the adhesion of by-products and the effect of reducing the leakage are obtained. Since both can be raised more, it is preferable. That is, by providing the grooves 41a at equal intervals and widths, not only the adsorption force between the substrate and the bank can be reduced, but also the adhesion force to the substrate G is equal even if a by-product is generated between the substrate and the bank. It is possible to prevent the substrate and the apparatus from being damaged due to local adsorption of the substrate. In addition, by providing a plurality of grooves 41a, each time the groove reaches the groove from the inside of the high pressure, it expands (depressurizes) and reaches the outside of the low pressure, so that the amount of heat transfer gas leakage can be further reduced. Further, in order to reduce the adsorption force between the substrate G and the bank 41 due to adhesion of by-products, instead of providing the groove 41a or in addition to providing the groove 41a, the bank 41 is provided. It is also effective to form recesses of other forms that can avoid adsorption of by-products to the substrate G, such as roughening the surface of the substrate.

なお、本発明は上記実施形態に限定されることなく種々変形可能である。例えば、上記実施形態では、本発明を平行平板型プラズマエッチング装置に適用した例について説明したが、これに限らず、誘導結合型等の他のプラズマ生成手段を用いたものであってもよく、またプラズマエッチングに限らず、プラズマアッシング、プラズマＣＶＤ等の他のプラズマ処理装置に適用可能であり、さらに、プラズマ処理装置に限らず、基板を基板載置台に載置して処理する基板処理装置全般に適用可能である。また、上記実施形態ではＦＰＤ用のガラス基板に適用した例について説明したが、これに限らず、半導体基板等、他の基板に適用可能であることはいうまでもない。   The present invention can be variously modified without being limited to the above embodiment. For example, in the above embodiment, the example in which the present invention is applied to a parallel plate type plasma etching apparatus has been described. However, the present invention is not limited to this, and other plasma generation means such as an inductively coupled type may be used. In addition to plasma etching, the present invention can be applied to other plasma processing apparatuses such as plasma ashing and plasma CVD. Furthermore, not only plasma processing apparatuses but also general substrate processing apparatuses that place and process a substrate on a substrate mounting table. It is applicable to. Moreover, although the example applied to the glass substrate for FPD was demonstrated in the said embodiment, it cannot be overemphasized that it is applicable not only to this but another board | substrates, such as a semiconductor substrate.

１；プラズマエッチング装置（基板処理装置）
２；チャンバー（処理容器）
４；基板載置台
４ａ；基材
４ｂ；底部絶縁部材
４ｃ；上部絶縁部材
４ｄ；側部絶縁部材
５；冷媒流路
７；空間
８；支持部材
１５：処理ガス供給管
１８：処理ガス供給源
１９：排気管
２０：排気装置
２１；搬入出口
２５；高周波電源
２６；伝熱ガス流路
２７；伝熱ガス供給機構
３０；静電チャック
３１；吸着電極
３３；直流電源
４０；制御部
４１；土手（周縁載置部）
４２；内側部分
５１；副生成物
５２；隙間
Ｇ；基板 1: Plasma etching equipment (substrate processing equipment)
2; Chamber (processing container)
DESCRIPTION OF SYMBOLS 4; Substrate mounting base 4a; Base material 4b; Bottom part insulating member 4c; Top insulating member 4d; Side part insulating member 5; Refrigerant flow path 7; Space 8; Support member 15: Processing gas supply pipe 18: Processing gas supply source 19 : Exhaust pipe 20: Exhaust device 21; Loading / unloading port 25; High frequency power supply 26; Heat transfer gas flow path 27; Heat transfer gas supply mechanism 30; Electrostatic chuck 31; Adsorption electrode 33; DC power supply 40; Perimeter mounting part)
42; inner part 51; by-product 52; gap G; substrate

Claims (7)

処理容器内で処理ガスにより被処理基板に処理を施す基板処理装置において基板を載置する基板載置台であって、
被処理基板を載置する載置面を有する上部絶縁部材内に直流電圧が印加される吸着電極が設けられて構成された静電チャックを備えた載置台本体と、
前記載置台本体を温調する温調機構と、
前記載置台本体に被処理基板が載置されている際に、被処理基板の裏面側に伝熱ガスを供給する伝熱ガス供給機構と
を具備し、
前記上部絶縁部材は、被処理基板の周縁部が載置される周縁載置部を有し、前記上部絶縁部材の前記周縁載置部より内側の内側部分は、その上面が前記周縁載置部よりも低く形成されており、被処理基板が載置された際に、被処理基板と前記内側部分の上面との間に前記伝熱ガスが供給される空間を有し、
前記吸着電極は、前記上部絶縁部材の前記周縁載置部に存在しないように設けられ、
前記周縁載置部は、前記処理ガスに起因してその上面に付着する副生成物がその上に載置された被処理基板の裏面に密着しないように形成された凹部を有しており、
前記凹部は、前記周縁載置部の上面の周方向に沿って設けられた複数の溝であることを特徴とする基板載置台。 A substrate mounting table for mounting a substrate in a substrate processing apparatus for processing a substrate to be processed with a processing gas in a processing container,
A mounting table body provided with an electrostatic chuck configured to be provided with a suction electrode to which a DC voltage is applied in an upper insulating member having a mounting surface on which a substrate to be processed is mounted;
A temperature control mechanism for controlling the temperature of the mounting table main body;
A heat transfer gas supply mechanism for supplying heat transfer gas to the back side of the substrate to be processed when the substrate to be processed is placed on the mounting table main body;
The upper insulating member has a peripheral placement portion on which a peripheral portion of the substrate to be processed is placed, and an inner portion inside the peripheral placement portion of the upper insulating member has an upper surface on the peripheral placement portion. A space for supplying the heat transfer gas between the substrate to be processed and the upper surface of the inner portion when the substrate to be processed is placed.
The adsorption electrode is provided so as not to exist in the peripheral mounting portion of the upper insulating member,
The peripheral mounting portion has a recess formed so that a by-product that adheres to the upper surface due to the processing gas does not adhere to the back surface of the substrate to be processed mounted thereon ,
The substrate mounting table , wherein the recess is a plurality of grooves provided along the circumferential direction of the upper surface of the peripheral mounting portion . 前記上部絶縁部材の前記内側部分から前記周縁載置部と同じ高さ位置まで延び、その上面で被処理基板を支持する基板支持部をさらに具備することを特徴とする請求項１に記載の基板載置台。   The substrate according to claim 1, further comprising a substrate support portion that extends from the inner portion of the upper insulating member to the same height position as the peripheral mounting portion and supports a substrate to be processed on the upper surface thereof. Mounting table. 前記複数の溝は、均等な間隔および幅で形成されることを特徴とする請求項１または請求項２に記載の基板載置台。 The substrate mounting table according to claim 1 , wherein the plurality of grooves are formed at equal intervals and widths. 前記周縁載置部の溝を含まない部分の幅は５ｍｍ以上であることを特徴とする請求項１から請求項３のいずれか１項に記載の基板載置台。 Substrate mounting table as claimed in any one of claims 3, wherein the width of the portion that does not include the groove of the peripheral mounting portion is 5mm or more. 前記載置台本体は、導電体部分を有し、前記導電体部分にプラズマ生成用の高周波電力が供給されることを特徴とする請求項１から請求項４のいずれか１項に記載の基板載置台。 The mounting table body has a conductive portion, the substrate according to any one of claims 1 to 4, high frequency power for the electrical conductor portion to the plasma generation, characterized in that the supplied mounting Stand. 被処理基板に対して処理を施すための処理容器と、
前記処理容器内で基板を載置する基板載置台と、
前記処理容器内に処理ガスを供給する処理ガス供給機構と、
前記処理容器内を排気する排気機構と
を具備し、
前記基板載置台は、上記請求項１から請求項４のいずれかの構成を有することを特徴とする基板処理装置。 A processing container for processing a substrate to be processed;
A substrate mounting table for mounting the substrate in the processing container;
A processing gas supply mechanism for supplying a processing gas into the processing container;
An exhaust mechanism for exhausting the inside of the processing container,
5. The substrate processing apparatus, wherein the substrate mounting table has the configuration according to any one of claims 1 to 4 . 前記基板載置台の前記載置台本体は、導電体部分を有し、前記導電体部分にプラズマ生成用の高周波電力を供給する高周波電源が接続され、
前記処理ガス供給機構は、前記処理容器の上部に前記基板載置台と対向して設けられた、前記処理ガスを前記処理容器内に吐出するためのシャワーヘッドを有し、
前記基板載置台と前記シャワーヘッドは一対の平行平板電極を構成し、前記高周波電源から供給された高周波電力により前記処理容器内に処理ガスのプラズマが形成されることを特徴とする請求項６に記載の基板処理装置。 The mounting table main body of the substrate mounting table has a conductor portion, and a high frequency power source for supplying high frequency power for plasma generation to the conductor portion is connected,
The processing gas supply mechanism includes a shower head provided on the upper portion of the processing container so as to face the substrate mounting table and for discharging the processing gas into the processing container.
The shower head and the substrate mounting table constitutes a pair of parallel plate electrodes, to claim 6, characterized in that the plasma of the processing gas is formed in the processing vessel by the high frequency power supplied from the high frequency power source The substrate processing apparatus as described.
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