TW201438096A - Substrate mounting table and substrate processing apparatus - Google Patents
Substrate mounting table and substrate processing apparatus Download PDFInfo
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- TW201438096A TW201438096A TW102140864A TW102140864A TW201438096A TW 201438096 A TW201438096 A TW 201438096A TW 102140864 A TW102140864 A TW 102140864A TW 102140864 A TW102140864 A TW 102140864A TW 201438096 A TW201438096 A TW 201438096A
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- 239000000758 substrate Substances 0.000 title claims abstract description 245
- 238000012545 processing Methods 0.000 title claims abstract description 69
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
本發明係關於載置基板之基板載置台及使用該基板載置台之基板處理裝置。 The present invention relates to a substrate mounting table on which a substrate is placed and a substrate processing apparatus using the substrate mounting table.
在平板顯示器(FPD)或半導體裝置之製造過程中，對被處理基板，大多使用蝕刻、濺鍍、CVD(化學氣相沉積)等電漿處理。 In the manufacturing process of a flat panel display (FPD) or a semiconductor device, plasma treatment such as etching, sputtering, or CVD (Chemical Vapor Deposition) is often used for the substrate to be processed.
作為實施該電漿處理之電漿處理裝置，已知例如在腔室內配置一對平行平板電極(上部及下部電極)，在作為下部電極功能之基板載置台上載置被處理基板，且對腔室內導入處理氣體，並對電極的至少一方施加高頻而在電極間形成高頻電場，藉由該高頻電場形成處理氣體之電漿且對被處理基板實施電漿處理者。 As a plasma processing apparatus for performing the plasma treatment, it is known that, for example, a pair of parallel plate electrodes (upper and lower electrodes) are disposed in a chamber, and a substrate to be processed is placed on a substrate stage as a lower electrode function, and the chamber is placed inside the chamber. The processing gas is introduced, and a high frequency is applied to at least one of the electrodes to form a high-frequency electric field between the electrodes, and the plasma of the processing gas is formed by the high-frequency electric field, and the substrate to be processed is subjected to plasma treatment.
在該電漿處理裝置中，當載置於作為下部電極之基板載置台之被處理基板的溫度因電漿的熱不均勻上升時，則會涉及到電漿處理之面內均勻性惡化或阻劑燒焦等製品不良。因此，以被處理基板成為均勻溫度分布的方式對基板載置台進行溫度調節，並使基板載置台與基板之 間的空間充滿氣體且傳達基板載置台的熱。又，為了保持該空間的壓力，而在基板載置台之上面的外周部設置被載置有被處理基板之周緣部而密合的堤防，且為了防止被處理基板上浮、偏差，而在基板載置台之上面形成靜電夾盤(ESC)並藉由靜電吸附固定被處理基板(例如專利文獻1)。 In the plasma processing apparatus, when the temperature of the substrate to be processed placed on the substrate stage as the lower electrode rises due to heat unevenness of the plasma, the in-plane uniformity of the plasma treatment is deteriorated or hindered. Poor products such as charring. Therefore, the substrate mounting table is temperature-regulated so that the substrate to be processed has a uniform temperature distribution, and the substrate mounting table and the substrate are placed. The space between the spaces is filled with gas and conveys the heat of the substrate stage. In addition, in order to prevent the pressure of the space, the outer peripheral portion of the upper surface of the substrate mounting table is provided with a bank surface on which the peripheral edge portion of the substrate to be processed is placed, and the substrate is placed on the substrate to prevent floating or variation of the substrate to be processed. An electrostatic chuck (ESC) is formed on the top of the stage, and the substrate to be processed is fixed by electrostatic adsorption (for example, Patent Document 1).
〔專利文獻1〕日本特開2008-84924號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2008-84924
然而，靜電夾盤係利用對設置於絕緣構件之內部的吸附電極施加直流電壓，藉由存在於吸附電極之電荷與腔室內電漿之電荷之間的庫倫力，在基板載置台表面吸附固定被處理基板者，例如當導電性副產物附著於基板載置台(下部電極)之表面時，電子會容易進入被處理基板與基板載置台間，當電子進入時，該負電荷與吸附電極之正電荷將進行結合，而當關閉靜電夾盤的電壓時，相反地被處理基板會被吸附於基板載置台的堤防，其後，即使執行除電製程，電荷之除去仍不充分。又，副產物吸附於堤防的表面且被處理基板與堤防間的間隙被副產物填滿，因此基板與基板載置台的密合度會過大，而更促進了被處 理基板的吸附。因此，在除電後將被處理基板上舉而從基板載置台進行剝離時，會導致因吸附現象造成基板破裂及因殘留之電荷或剝離帶電造成元件被靜電破壞(ESD)發生的原因。 However, the electrostatic chuck uses a DC voltage applied to the adsorption electrode provided inside the insulating member, and is adsorbed and fixed on the surface of the substrate mounting table by the Coulomb force between the charge existing in the adsorption electrode and the charge in the plasma in the chamber. When the substrate is processed, for example, when the conductive by-product adheres to the surface of the substrate stage (lower electrode), electrons easily enter between the substrate to be processed and the substrate stage, and when the electron enters, the positive charge of the negative charge and the adsorption electrode When the voltage of the electrostatic chuck is turned off, the substrate to be processed is adsorbed to the bank of the substrate stage, and thereafter, even if the static elimination process is performed, the removal of the charge is insufficient. Further, since the by-product is adsorbed on the surface of the bank and the gap between the substrate to be treated and the bank is filled with by-products, the adhesion between the substrate and the substrate mounting table is excessively large, and the position is further promoted. The adsorption of the substrate. Therefore, when the substrate to be processed is lifted and removed from the substrate stage after the charge is removed, the substrate is broken due to the adsorption phenomenon, and the element is electrostatically destroyed (ESD) due to residual charge or peeling electrification.
本發明係有鑑於該情況所研發者，以提供一種在對被處理基板進行剝離時難以產生因被處理基板之吸附現象造成之基板破裂及因殘留之電荷或剝離帶電造成之元件被靜電破壞的基板載置台及使用基板載置台的基板處理裝置為課題。 The present invention has been made in view of the circumstances to provide a substrate which is less likely to cause cracking of the substrate due to the adsorption phenomenon of the substrate to be processed, and the element is electrostatically destroyed due to residual charge or peeling electrification. A substrate mounting table and a substrate processing apparatus using the substrate mounting table are the subject matter.
為了解決上述課題，在本發明之第1觀點中，提供一種基板載置台，係在處理容器內藉由處理氣體對被處理基板施予處理的基板處理裝置中載置基板的基板載置台，其特徵係具備：載置台本體，具備設置有吸附電極而構成的靜電夾盤，該吸附電極係對具有載置被處理基板之載置面的上部絕緣構件內施加直流電壓；溫度調節機構，對前述載置台本體進行溫度調節；及傳熱氣體供給機構，在被處理基板被載置於前述載置台本體時，對被處理基板之背面側供給傳熱氣體。前述上部絕緣構件係具有載置有被處理基板之周緣部的周緣載置部，在比前述上部絕緣構件之前述周緣載置部更內側之內側部份係其上面形成為低於前述周緣載置部，而載置有被處理基板時，具有前述傳熱氣體被供給至被處理基板與前述內側部份之上面之 間的空間，前述吸附電極係以不存在於前述上部絕緣構件之前述周緣載置部的方式予以設置，前述周緣載置部係具有凹部，該凹部係以因前述處理氣體而引起附著於其上面之副產物不與載置於其上之被處理基板的背面密合的方式來予以形成。 In order to solve the above problems, a first aspect of the present invention provides a substrate mounting table which is a substrate mounting table on which a substrate is placed in a substrate processing apparatus for processing a substrate to be processed by a processing gas in a processing container. The feature system includes: a mounting table main body; and an electrostatic chuck including an adsorption electrode that applies a DC voltage to an upper insulating member having a mounting surface on which the substrate to be processed is placed; and a temperature adjustment mechanism The stage main body is subjected to temperature adjustment, and the heat transfer gas supply means supplies the heat transfer gas to the back side of the substrate to be processed when the substrate to be processed is placed on the stage body. The upper insulating member has a peripheral edge mounting portion on which a peripheral edge portion of the substrate to be processed is placed, and an inner portion of the inner peripheral portion of the upper insulating member is formed to be lower than the peripheral edge. And a heat transfer gas is supplied to the substrate to be processed and the upper portion of the inner portion when the substrate to be processed is placed thereon The space between the adsorption electrodes is not provided in the peripheral mounting portion of the upper insulating member, and the peripheral mounting portion has a concave portion that is attached to the upper surface by the processing gas. The by-product is not formed in close contact with the back surface of the substrate to be processed placed thereon.
在上述第1觀點之基板載置台中，更亦可具備基板支撐部，該基板支撐部係從前述上部絕緣構件之前述內側部份延伸至與前述周緣載置部相同高度的位置，並在該上面支撐被處理基板。 Further, in the substrate mounting table according to the first aspect, the substrate supporting portion may further include a substrate supporting portion extending from the inner portion of the upper insulating member to a position at the same height as the peripheral mounting portion, and The substrate to be processed is supported on the upper surface.
前述凹部係可作為形成於前述周緣載置部之上面的溝。 The recess may be a groove formed on the upper surface of the peripheral mounting portion.
前述溝係可沿著前述周緣載置部上面之圓周方向而設。該情況下，前述溝係具有複數個較佳，前述複數個溝係以均等的間隔及寬度來予以形成較佳。不包含前述周緣載置部之溝之部份的寬度係5mm以上較佳。 The groove system may be provided along the circumferential direction of the upper surface of the peripheral edge mounting portion. In this case, it is preferable that the plurality of grooves are plural, and the plurality of grooves are preferably formed at equal intervals and widths. The width of the portion not including the groove of the peripheral mounting portion is preferably 5 mm or more.
前述載置台本體係具有導電體部份，亦可對前述導電體部份供給電漿生成用之高頻電力。 The mounting platform system has a conductor portion, and the high-frequency power for plasma generation can be supplied to the conductor portion.
在本發明之第2觀點中，提供一種基板處理裝置，係具備：處理容器，用於對被處理基板施予處理；基板載置台，在前述處理容器內載置基板；處理氣體供給機構，對前述處理容器內供給處理氣體；及排氣機構，對前述處理容器內進行排氣，而前述基板載置台係具有上述第1觀點之構成。 According to a second aspect of the present invention, a substrate processing apparatus includes: a processing container for performing a treatment on a substrate to be processed; a substrate mounting table on which a substrate is placed; and a processing gas supply mechanism; The processing gas is supplied into the processing container; and the exhaust mechanism exhausts the inside of the processing container, and the substrate mounting table has the configuration of the first aspect.
在上述第2觀點的基板處理裝置中，可構成 為前述基板載置台之前述載置台本體具有導電體部份，連接有對前述導電體部份供給電漿生成用之高頻電力的高頻電源，前述處理氣體供給機構係具有噴頭，該噴頭係與前述基板載置台相對向地被設於前述處理容器的上部，用於對前述前述處理容器內吐出前述處理氣體，前述基板載置台與前述噴頭係構成一對平行平板電極，藉由從前述高頻電源供給之高頻電力在前述處理容器內形成處理氣體之電漿。 In the substrate processing apparatus of the second aspect, the composition can be configured The mounting base of the substrate mounting table has a conductor portion, and is connected to a high-frequency power source that supplies high-frequency power for generating plasma to the conductor portion, and the processing gas supply mechanism has a head. An upper portion of the processing container is disposed opposite to the substrate mounting table, and the processing gas is discharged into the processing container, and the substrate mounting table and the shower head form a pair of parallel plate electrodes, and the high The high frequency power supplied by the frequency power source forms a plasma of the processing gas in the aforementioned processing container.
根據本發明，靜電夾盤之吸附電極係以不存在於上部絕緣構件之周緣載置部的方式而予以設置，且周緣載置部係具有凹部，該凹部係以因處理氣體而引起附著於其上面之副產物不與載置於其上之被處理基板之背面密合的方式來予以形成。因此，即使電荷繞進周緣載置部之導電性副產物亦不會存在有與其結合的電荷，又，由於存在有凹部而能夠降低周緣載置部與被處理基板間的吸附力，因此，在除電後將被處理基板上舉而從基板載置台進行剝離時，能夠防止因吸附現象造成被處理基板破裂及因殘留之電荷或剝離帶電造成元件被靜電破壞(ESD)的發生。 According to the invention, the adsorption electrode of the electrostatic chuck is provided so as not to exist on the peripheral mounting portion of the upper insulating member, and the peripheral mounting portion has a concave portion which is attached to the concave portion due to the processing gas. The by-products above are not formed in such a manner as to be in close contact with the back surface of the substrate to be processed placed thereon. Therefore, even if the electric charge bypasses the conductive by-product of the peripheral mounting portion, the electric charge coupled thereto does not exist, and the concave portion can reduce the adsorption force between the peripheral mounting portion and the substrate to be processed. When the substrate to be processed is lifted and removed from the substrate stage after the charge is removed, it is possible to prevent the substrate to be processed from being broken due to the adsorption phenomenon and to cause electrostatic breakdown (ESD) of the element due to residual charge or peeling electrification.
1‧‧‧電漿蝕刻裝置(基板處理裝置) 1‧‧‧ Plasma etching device (substrate processing device)
2‧‧‧腔室(處理容器) 2‧‧‧Case (processing container)
4‧‧‧基板載置台 4‧‧‧Substrate mounting table
4a‧‧‧基材 4a‧‧‧Substrate
4b‧‧‧底部絕緣構件 4b‧‧‧Bottom insulation member
4c‧‧‧上部絕緣構件 4c‧‧‧Upper insulation member
4d‧‧‧側部絕緣構件 4d‧‧‧Side insulation members
5‧‧‧冷媒流路 5‧‧‧Refrigerant flow path
7‧‧‧空間 7‧‧‧ Space
8‧‧‧支撐構件 8‧‧‧Support members
15‧‧‧處理氣體供給管 15‧‧‧Processing gas supply pipe
18‧‧‧處理氣體供給源 18‧‧‧Processing gas supply
19‧‧‧排氣管 19‧‧‧Exhaust pipe
20‧‧‧排氣裝置 20‧‧‧Exhaust device
21‧‧‧搬入搬出口 21‧‧‧ Move in and out
25‧‧‧高頻電源 25‧‧‧High frequency power supply
26‧‧‧傳熱氣體流路 26‧‧‧heat transfer gas flow path
27‧‧‧傳熱氣體供給機構 27‧‧‧Transmission gas supply mechanism
30‧‧‧靜電夾盤 30‧‧‧Electrical chuck
31‧‧‧吸附電極 31‧‧‧Adsorption electrode
33‧‧‧直流電源 33‧‧‧DC power supply
40‧‧‧控制部 40‧‧‧Control Department
41‧‧‧堤防(周緣載置部) 41‧‧‧Dikes (Peripheral Loading Department)
42‧‧‧內側部份 42‧‧‧ inside part
51‧‧‧副產物 51‧‧‧ by-product
52‧‧‧間隙 52‧‧‧ gap
G‧‧‧基板 G‧‧‧Substrate
〔圖1〕表示作為涉及本發明之一實施形態之基板處理裝置之一例之電漿蝕刻裝置的剖面圖。 Fig. 1 is a cross-sectional view showing a plasma etching apparatus as an example of a substrate processing apparatus according to an embodiment of the present invention.
〔圖2〕表示圖1之電漿蝕刻裝置之基板載置台的剖面圖。 Fig. 2 is a cross-sectional view showing a substrate stage of the plasma etching apparatus of Fig. 1.
〔圖3〕表示圖1之電漿蝕刻裝置之基板載置台之一部份的平面圖。 Fig. 3 is a plan view showing a part of a substrate stage of the plasma etching apparatus of Fig. 1.
〔圖4〕表示以往之基板載置台的剖面圖。 FIG. 4 is a cross-sectional view showing a conventional substrate stage.
〔圖5〕表示在以往之基板載置台中，藉由靜電夾盤吸附基板之狀態與解除吸附之狀態的模式圖。 FIG. 5 is a schematic view showing a state in which the substrate is adsorbed by the electrostatic chuck and a state in which the adsorption is released in the conventional substrate mounting table.
〔圖6〕表示在以往之基板載置台中，在導電性副產物附著於堤防的狀態下，藉由靜電夾盤吸附基板之狀態與解除吸附之狀態的模式圖。 [Fig. 6] Fig. 6 is a schematic view showing a state in which a substrate is adsorbed by an electrostatic chuck and a state in which adsorption is released in a state in which a conductive by-product adheres to a bank in a conventional substrate mounting table.
〔圖7〕表示在以往之基板載置台中，將基板載置於堤防之狀態的圖，(a)係表示形成有堤防與基板間之間隙的狀態，(b)係表示以副產物填滿間隙的狀態。 (Fig. 7) is a view showing a state in which a substrate is placed on a bank in a conventional substrate mounting table, wherein (a) shows a state in which a gap between the bank and the substrate is formed, and (b) shows that the substrate is filled with by-products. The state of the gap.
〔圖8〕表示在本實施形態之基板載置台中，在導電性副產物附著於堤防的狀態下，藉由靜電夾盤吸附基板之狀態與解除吸附之狀態的模式圖。 (Fig. 8) is a schematic view showing a state in which the substrate is adsorbed by the electrostatic chuck and a state in which the adsorption is released in a state in which the conductive by-product adheres to the bank in the substrate mounting table of the embodiment.
〔圖9〕表示將基板載置於形成溝之堤防之狀態的圖。 Fig. 9 is a view showing a state in which a substrate is placed on a bank forming a trench.
以下，參閱添加圖式對本發明之實施形態進 行說明。 Hereinafter, referring to the addition of the drawings, an embodiment of the present invention is Line description.
圖1係表示作為涉及本發明之一實施形態之基板處理裝置之一例之電漿蝕刻裝置的剖面圖，圖2係表示圖1之電漿蝕刻裝置之基板載置台的剖面圖，圖3係表示基板載置台之一部份的平面圖。 1 is a cross-sectional view showing a plasma etching apparatus as an example of a substrate processing apparatus according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view showing a substrate mounting table of the plasma etching apparatus of FIG. 1, and FIG. 3 is a view showing A plan view of a portion of the substrate stage.
如圖1所示，該電漿蝕刻裝置1，係構成為對FPD用玻璃基板(以下僅記述為「基板」)G進行蝕刻之電容耦合型平行平板電漿蝕刻裝置。作為FPD，舉例有液晶顯示器(LCD)、電致發光(Electro Luminescence；EL)顯示器、電漿顯示器面板(PDP)等。電漿蝕刻裝置1係具備作為收容當作被處理基板之基板G之處理容器的腔室2。腔室2係例如由表面被耐酸鋁處理(陽極氧化處理)後之鋁所構成，並與基板G之形狀相對應而被形成為四角筒形狀。 As shown in FIG. 1, the plasma etching apparatus 1 is a capacitive coupling type parallel plate plasma etching apparatus which etches a glass substrate for FPD (hereinafter, simply referred to as "substrate") G. Examples of the FPD include a liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display panel (PDP), and the like. The plasma etching apparatus 1 is provided with a chamber 2 as a processing container for accommodating the substrate G as a substrate to be processed. The chamber 2 is made of, for example, aluminum whose surface is treated with an alumite treatment (anodizing treatment), and is formed in a rectangular tube shape in accordance with the shape of the substrate G.
在腔室2內的底壁，設置有載置基板G並作為下部電極之功能的基板載置台4。基板載置台4之詳細的構造如後述。 A substrate mounting table 4 on which the substrate G is placed and functions as a lower electrode is provided on the bottom wall in the chamber 2. The detailed structure of the substrate stage 4 will be described later.
在腔室2之上部或上壁係設置有與基板載置台4相對向之噴頭11，該噴頭11係對腔室2內供給處理氣體並作為上部電極的功能。噴頭11係在內部形成有使處理氣體擴散之氣體擴散空間12，並在下面或與基板載置台4的相對面形成有吐出處理氣體的複數個吐出孔13。該噴頭11為接地狀態，而與基板載置台4一同構成一對平行平板電極。 A head 11 facing the substrate stage 4 is provided on the upper portion or the upper wall of the chamber 2, and the head 11 serves to supply a processing gas into the chamber 2 as an upper electrode. The head 11 has a gas diffusion space 12 for diffusing the processing gas therein, and a plurality of discharge holes 13 for discharging the processing gas are formed on the lower surface or on the surface opposite to the substrate stage 4. The head 11 is in a grounded state, and together with the substrate stage 4, constitutes a pair of parallel plate electrodes.
在噴頭11之上面設有氣體導入口14，在該氣體導入口14連接有處理氣體供給管15，該處理氣體供給管15係經由閥16及質流控制器17連接有處理氣體供給源18。自處理氣體供給源18供給蝕刻用之處理氣體。作為處理氣體可以使用鹵素系氣體、O2氣體、Ar氣體等，通常在該領域所使用之氣體。 A gas introduction port 14 is provided on the upper surface of the shower head 11, and a process gas supply pipe 15 is connected to the gas introduction port 14, and the process gas supply pipe 15 is connected to the process gas supply source 18 via a valve 16 and a mass flow controller 17. The processing gas for etching is supplied from the processing gas supply source 18. As the processing gas, a halogen-based gas, an O 2 gas, an Ar gas, or the like can be used, and a gas generally used in the field is used.
在腔室2之底壁連接有排氣管19，在該排氣管19連接有排氣裝置20且設有未圖示之壓力調整閥。排氣裝置20係具備渦輪分子泵等之真空泵，藉此便能夠對腔室2內進行排氣而可抽真空至預定的減壓環境。在腔室2的側壁形成有搬入搬出基板G用之搬入搬出口21，並設有對該搬入搬出口21進行開關之閘閥22，當搬入搬出口21開放時，構成為藉由未圖示之搬送手段使基板G被搬入搬出至腔室2內外。 An exhaust pipe 19 is connected to the bottom wall of the chamber 2, and an exhaust device 20 is connected to the exhaust pipe 19, and a pressure regulating valve (not shown) is provided. The exhaust device 20 is provided with a vacuum pump such as a turbo molecular pump, whereby the inside of the chamber 2 can be evacuated and evacuated to a predetermined reduced pressure environment. A loading/unloading port 21 for loading and unloading the substrate G is formed on the side wall of the chamber 2, and a gate valve 22 for opening and closing the loading/unloading port 21 is provided. When the loading/unloading port 21 is opened, it is configured not to be illustrated. The transport means causes the substrate G to be carried in and out of the inside and outside of the chamber 2.
又，電漿蝕刻裝置1係具備控制部40，該控制部40係具備控制電漿蝕刻裝置1之各構成部用的微處理器(電腦)。 Further, the plasma etching apparatus 1 includes a control unit 40 that includes a microprocessor (computer) for controlling each component of the plasma etching apparatus 1.
接下來，參閱圖2、3對基板載置台4之詳細的構成進行說明。 Next, a detailed configuration of the substrate stage 4 will be described with reference to FIGS.
基板載置台4係具有：基材4a，由如鋁等金屬或碳之導電性材料所構成；底部絕緣構件4b，設於基材4a與腔室2之底部之間；上部絕緣構件4c，設於基材4a上；及側部絕緣構件4d，覆蓋基材4a之側壁，該些係對應於基板G的形狀而構成形成為四角板狀或柱狀的載置台本 體。作為底部絕緣構件4b、上部絕緣構件4c、側部絕緣構件4d，能夠使用氧化鋁等絕緣性陶瓷。 The substrate mounting table 4 has a base material 4a made of a metal such as aluminum or a conductive material of carbon, a bottom insulating member 4b disposed between the base material 4a and the bottom of the chamber 2, and an upper insulating member 4c. The base material 4a and the side insulating member 4d cover the side wall of the base material 4a, and these are formed in a square plate shape or a column shape according to the shape of the substrate G. body. As the bottom insulating member 4b, the upper insulating member 4c, and the side insulating member 4d, an insulating ceramic such as alumina can be used.
在基材4a連接有供給高頻電力用之供電線23，在該供電線23連接有匹配器24及高頻電源25。自高頻電源25對基板載置台4供給例如13.56MHz的高頻電力，藉此，基板載置台4係作為下部電極的功能。又，在基材4a中設有冷媒流路5，該冷媒流路5係作為對載置之基板G之溫度進行調節用的溫度調節手段，而使冷媒流通。 A power supply line 23 for supplying high-frequency power is connected to the base material 4a, and a matching unit 24 and a high-frequency power source 25 are connected to the power supply line 23. The high-frequency power source 25 supplies high-frequency power of, for example, 13.56 MHz to the substrate stage 4, whereby the substrate stage 4 functions as a lower electrode. Further, the base material 4a is provided with a refrigerant flow path 5 which serves as a temperature adjustment means for adjusting the temperature of the substrate G placed thereon, and allows the refrigerant to flow.
構成基板載置台4上部之上部絕緣構件4c，係在其上面的外周部形成有作為載置基板G之周緣部而密合之周緣載置部的堤防41。比上部絕緣構件4c之堤防41內側之內側部份42，其上面形成為低於堤防41之上面，在載置有基板G時，在基板G與內側部份42之上面之間形成有空間7。在空間7連接有從下方延伸之傳熱氣體流路26，在該傳熱氣體流路26之另一端連接有傳熱氣體供給機構27。且，可從傳熱氣體供給機構27經由傳熱氣體流路26向空間7供給對基板G進行熱傳導用之傳熱氣體例如He氣體。 The upper insulating member 4c is formed on the upper portion of the substrate mounting table 4, and the bank 41 on which the peripheral edge portion of the substrate G is adhered is formed on the outer peripheral portion of the substrate. The inner portion 42 of the inner side of the bank 41 of the upper insulating member 4c is formed to be lower than the upper surface of the bank 41. When the substrate G is placed, a space 7 is formed between the substrate G and the upper portion of the inner portion 42. . A heat transfer gas flow path 26 extending downward is connected to the space 7, and a heat transfer gas supply mechanism 27 is connected to the other end of the heat transfer gas flow path 26. Further, a heat transfer gas such as He gas for thermally conducting the substrate G can be supplied from the heat transfer gas supply means 27 to the space 7 via the heat transfer gas flow path 26.
在空間7之內部設有從內側部份42之上面沿上方延伸之複數個支撐構件8。堤防41之上面與支撐構件8之上面係具有相同的高度位置，並可在支撐構件的上面支撐周緣部被載置於堤防41上面之基板G的下面中央部，堤防41之上面與支撐構件8之上面係構構成基板G 的載置面。另外，在本實施形態中係表示支撐構件8為圓柱狀的情況，支撐構件8係對空間7全體供給傳熱氣體，只要能夠支撐基板G，則能夠採用格子狀或扁平狀等其他各種的形狀。又，支撐構件8亦可為1個。 Inside the space 7, a plurality of support members 8 extending upward from the upper surface of the inner portion 42 are provided. The upper surface of the embankment 41 has the same height position as the upper surface of the support member 8, and the upper surface of the support member is supported on the lower central portion of the substrate G placed on the embankment 41, and the upper surface of the embankment 41 and the support member 8 are supported. The upper structure constitutes the substrate G Mounting surface. In the present embodiment, the support member 8 is formed in a columnar shape. The support member 8 supplies a heat transfer gas to the entire space 7. As long as the substrate G can be supported, various other shapes such as a lattice shape or a flat shape can be employed. . Further, the number of the support members 8 may be one.
在上部絕緣構件4c的內部設有沿著基板G之面內方向(亦即水平方向)的吸附電極31，且構成有以上部絕緣構件4c與吸附電極31靜電吸附基板G用的靜電夾盤30。吸附電極31係可採用板狀、膜狀、格子狀、網狀等各種形態。又，吸附電極31係以其端部不干涉堤防41的方式予以設置。亦即，在與上部絕緣構件4c之堤防41相對應的部份係不存在有吸附電極31。吸附電極31係經由供電線32連接有直流電源33，且可對吸附電極31施加直流電壓。向吸附電極31供電係可藉由開關34來進行開關。在關閉狀態中，供電線32為接地狀態。 The adsorption electrode 31 along the in-plane direction (ie, the horizontal direction) of the substrate G is provided inside the upper insulating member 4c, and the electrostatic chuck 30 for electrostatically adsorbing the substrate G by the upper insulating member 4c and the adsorption electrode 31 is formed. . The adsorption electrode 31 can be in various forms such as a plate shape, a film shape, a lattice shape, or a mesh shape. Further, the adsorption electrode 31 is provided such that its end portion does not interfere with the bank 41. That is, the adsorption electrode 31 is not present in the portion corresponding to the bank 41 of the upper insulating member 4c. The adsorption electrode 31 is connected to the DC power source 33 via the power supply line 32, and a DC voltage can be applied to the adsorption electrode 31. The power supply to the adsorption electrode 31 can be switched by the switch 34. In the off state, the power supply line 32 is in a grounded state.
在堤防41之上面，如後述，從降低因副產物之附著所造成基板G與堤防41間的吸附力而消解過度密合的觀點來看，沿著圓周方向形成有1以上(本例的情況為2個)溝41a。則傳熱氣體不會流入溝41a。又，從降低來自傳熱氣體之空間7之洩漏量的觀點來看，堤防41之寬度係設成為載置有溝41a除外之基板之部份的寬度合計為5mm以上較佳。又，將溝41a設為2並以均等的間隔、寬度形成溝41a為更佳。溝41a的深度雖並不特別限制，但設為可具有堤防41所需之強度的範圍為較佳。取代設置此種溝41a或除了設置溝41a以外，使堤防41之 表面變粗糙等亦可形成不同形態的凹部。 As described later, as described later, from the viewpoint of reducing the adsorption force between the substrate G and the bank 41 due to adhesion of by-products, excessive adhesion is formed in the circumferential direction, and one or more cases are formed along the circumferential direction (in the case of this example) It is two) grooves 41a. Then, the heat transfer gas does not flow into the groove 41a. Moreover, from the viewpoint of reducing the amount of leakage from the space 7 of the heat transfer gas, the width of the bank 41 is preferably 5 mm or more in width of a portion of the substrate on which the groove 41a is placed. Further, it is more preferable to form the groove 41a with the groove 41a as 2 and to form the groove 41a at equal intervals. The depth of the groove 41a is not particularly limited, but a range in which the strength required for the bank 41 is required is preferable. Instead of providing such a groove 41a or in addition to providing the groove 41a, the bank 41 is The surface may be roughened or the like to form recesses of different shapes.
在基板載置台4，進行基板G之收授用的複數個升降銷(未圖示)係設成可對基板載置台4之上面(即上部絕緣構件4c之上面)突没，基板G之收授係對從基板載置台4之上面突出至上方之狀態的升降銷予以進行。 In the substrate stage 4, a plurality of lift pins (not shown) for receiving the substrate G are provided so as to protrude from the upper surface of the substrate stage 4 (that is, the upper surface of the upper insulating member 4c), and the substrate G is received. The lift pin of the state of being protruded from the upper surface of the substrate stage 4 to the upper side is performed.
接下來，對上述方式構成之電漿蝕刻裝置1的處理動作進行說明。以下的處理動作係在控制部40的控制下執行。 Next, the processing operation of the plasma etching apparatus 1 configured as described above will be described. The following processing operations are executed under the control of the control unit 40.
首先，藉由排氣裝置20對腔室2內進行排氣至預定壓力並開放閘閥22，從搬入搬出口21藉由未圖示之搬送裝置搬入基板G，在使未圖示之升降銷上升的狀態下，於其上方接收基板G並使升降銷下降，藉此使基板G載置於基板載置台4上。使搬送裝置從腔室2退避後，關閉閘閥22。 First, the inside of the chamber 2 is exhausted to a predetermined pressure by the exhaust device 20, and the gate valve 22 is opened. The loading/unloading port 21 is carried into the substrate G by a conveying device (not shown), and the lifting pin (not shown) is raised. In the state in which the substrate G is received above and the lift pins are lowered, the substrate G is placed on the substrate stage 4 . After the conveyance device is retracted from the chamber 2, the gate valve 22 is closed.
在該狀態下，藉由壓力調整閥將腔室2內的壓力調整至預定真空度，並從處理氣體供給源18經由處理氣體供給管15及噴頭11對腔室2內供給處理氣體。 In this state, the pressure in the chamber 2 is adjusted to a predetermined degree of vacuum by the pressure regulating valve, and the processing gas is supplied from the processing gas supply source 18 to the inside of the chamber 2 via the processing gas supply pipe 15 and the shower head 11.
且，從高頻電源25經由匹配器24對基板載置台4(基材4a)施加高頻電力，而使高頻電場產生於作為下部電極之基板載置台與作為上部電極之噴頭11之間，並使腔室2內的處理氣體電漿化。此時，從直流電源33對靜電夾盤30之吸附電極31施加直流電壓，藉此，基板G將經由電漿被庫倫力吸附固定於基板載置台4。 Further, high-frequency electric power is applied from the high-frequency power source 25 to the substrate stage 4 (base material 4a) via the matching unit 24, and a high-frequency electric field is generated between the substrate stage as the lower electrode and the head 11 as the upper electrode. The processing gas in the chamber 2 is plasmated. At this time, a DC voltage is applied from the DC power source 33 to the adsorption electrode 31 of the electrostatic chuck 30, whereby the substrate G is adsorbed and fixed to the substrate stage 4 by the Coulomb force via the plasma.
此時，在冷媒流路5中流通有預定溫度的冷媒而對基板載置台4進行溫度調節，從傳熱氣體供給機構27經由傳熱氣體流路26對基板G背面側的空間7供給傳熱氣體，使基板載置台4的熱傳導至基板G以控制基板G的溫度。 At this time, a refrigerant having a predetermined temperature flows through the refrigerant flow path 5 to adjust the temperature of the substrate stage 4, and heat is supplied from the heat transfer gas supply unit 27 to the space 7 on the back side of the substrate G via the heat transfer gas flow path 26. The gas conducts heat of the substrate stage 4 to the substrate G to control the temperature of the substrate G.
在該狀態下，對基板G進行電漿處理，在本實施形態中，係進行電漿蝕刻處理。 In this state, the substrate G is subjected to plasma treatment, and in the present embodiment, plasma etching treatment is performed.
處理結束後，關閉高頻電源25並使開關34切換成接地側而停止來自直流電源33之直流電壓的施加，解除基板G的靜電吸附。且，藉由升降銷(未圖示)將基板G上舉，打開閘閥22並藉由搬送機構(未圖示)搬出後處理的基板G。 After the end of the process, the high-frequency power source 25 is turned off, and the switch 34 is switched to the ground side to stop the application of the DC voltage from the DC power source 33, and the electrostatic adsorption of the substrate G is released. Then, the substrate G is lifted by a lift pin (not shown), the gate valve 22 is opened, and the post-processed substrate G is carried out by a transport mechanism (not shown).
然而，如圖4所示，在以往之基板載置台4'中，為了確實吸附基板G而將靜電夾盤30'之吸附電極31'儘可能設置至靠近基板G之端部的位置。在該以往之基板載置台4'中，即使副產物不存在於堤防41'之表面時，從對圖5(a)之吸附電極31'施加電壓並在吸附電極31'之表面與基板G之表面產生電荷使得基板G吸附的狀態來看，當停止電壓的施加，如圖5(b)所示，電荷從吸附電極31'遠離且基板G表面的電荷亦會遠離，從而解除基板G的吸附，因此，上舉基板G後基板G想當然可從基板載置台4'剝離。但是，在將處理氣體電漿化並進行電漿處理的情況下，藉由反應會產生副產物，如圖6(a)所示，會有作為副產物51而附著於基板載置台4'之 表面特別是堤防41'的情況。該副產物51為導電性的情況下，對吸附電極31'施加電壓時，電荷會繞進副產物51之表面，與吸附電極31'其正下方之部份的電荷結合。即使在該狀態下停止電壓的施加，如圖6(b)所示，繞進附著於堤防41'之導電性副產物51之表面的電荷亦不會被去除，而與吸附電極31'之堤防41'相對應之部份的電荷亦會殘留，在堤防41'的部份會維持為基板G已吸附了的狀態。 However, as shown in FIG. 4, in the conventional substrate mounting table 4 ' , the adsorption electrode 31 ' of the electrostatic chuck 30 ' is placed as close as possible to the end of the substrate G in order to reliably adsorb the substrate G. In the conventional substrate mounting table 4 ' , even if a by-product does not exist on the surface of the bank 41 ' , a voltage is applied from the adsorption electrode 31 ' of Fig. 5(a) to the surface of the adsorption electrode 31 ' and the substrate G. When the surface is charged to cause the substrate G to be adsorbed, when the application of the stop voltage is applied, as shown in FIG. 5(b), the charge is away from the adsorption electrode 31 ' and the charge on the surface of the substrate G is also distant, thereby releasing the adsorption of the substrate G. Therefore, it is of course possible to peel off the substrate G from the substrate mounting table 4 ' . However, when the treatment gas is plasma-treated and subjected to plasma treatment, by-products are generated by the reaction, and as shown in FIG. 6(a), the substrate is attached to the substrate stage 4 ' as a by-product 51. The surface is especially the case of the embankment 41 ' . When the by-product 51 is electrically conductive, when a voltage is applied to the adsorption electrode 31 ' , the electric charge is wound around the surface of the by-product 51, and is combined with the electric charge of the portion directly below the adsorption electrode 31 ' . Even if the application of the voltage is stopped in this state, as shown in Fig. 6 (b), the electric charge wound around the surface of the conductive by-product 51 attached to the bank 41 ' is not removed, and the bank of the adsorption electrode 31 ' is prevented. 41 ' The corresponding part of the charge will remain, and the part of the bank 41 ' will remain in the state where the substrate G has been adsorbed.
又，如圖4所示，以往是重視以堤防41'抑制靜電吸附時與基板G之間的密合性及來自空間7的洩漏，而形成足夠的寬度。但是，當微視性觀看時，如圖7(a)所示，在堤防41'與基板G之間存在有間隙52，如圖7(b)所示，該間隙52被由電漿處理產生之副產物51填滿時，因副產物51的作用，會導致基板G與堤防41'之間牢固地密合，而更加促進了基板G之吸附。 Moreover, as shown in FIG. 4, in the past, it has been emphasized that the embankment 41 ' suppresses the adhesion between the substrate and the substrate G and the leakage from the space 7, and forms a sufficient width. However, when viewed microscopically, as shown in FIG. 7(a), there is a gap 52 between the bank 41 ' and the substrate G, and as shown in FIG. 7(b), the gap 52 is generated by plasma processing. When the by-product 51 is filled, due to the action of the by-product 51, the substrate G and the bank 41 ' are firmly adhered to each other, and the adsorption of the substrate G is further promoted.
以往像這樣，由於與堤防41'相對應之部份的電荷殘留及因副產物51造成基板G與堤防41'之間過度密合，而在上舉基板G並從基板載置台4'剝離時，產生因吸附現象造成之基板破裂及因殘留之電荷或剝離帶電造成之元件被靜電破壞(ESD)的發生。 In the past, when the charge remaining in the portion corresponding to the bank 41 ' and the substrate G and the bank 41 ' are excessively adhered due to the by-product 51, when the substrate G is lifted up and peeled off from the substrate stage 4 ' The occurrence of substrate breakdown due to adsorption phenomenon and the occurrence of electrostatic breakdown (ESD) of components due to residual charge or stripping electrification.
在此，在本實施形態中，係以不干涉堤防41之方式設置靜電夾盤30之吸附電極31，並使吸附電極31不存在於與上部絕緣構件4c之堤防41相對應的部份，且在堤防41之上面形成溝41a。 Here, in the present embodiment, the adsorption electrode 31 of the electrostatic chuck 30 is provided so as not to interfere with the bank 41, and the adsorption electrode 31 is not present in the portion corresponding to the bank 41 of the upper insulating member 4c, and A groove 41a is formed on the upper side of the embankment 41.
藉由以不干涉堤防41的方式設置吸附電極31，在對吸附電極31施加電壓而吸附基板G時，如圖8(a)所示，即使電荷繞進形成於堤防41之導電性副產物51之表面，在該正下方部份亦不會存在電荷，因此，與該電荷結合之電荷不會存在，當停止電壓之施加時，如圖8(b)所示，不會殘留有繞進導電性副產物51之表面的電荷，而吸附電極31之電荷被完全去除，故不會發生由電荷造成之基板G的吸附。另外，吸附電極31係即使僅物理性地伸出與堤防41相對應之部份，但只要不形成有影響存在於吸附電極31之電荷與存在於堤防41(導電性副產物)之上面之電荷的結合，則包含「吸附電極31不存在於與堤防41相對應之部份」狀態。 By providing the adsorption electrode 31 so as not to interfere with the bank 41, and applying a voltage to the adsorption electrode 31 to adsorb the substrate G, as shown in FIG. 8(a), even if the electric charge is wound into the conductive by-product 51 formed in the bank 41 On the surface, there is no charge in the portion directly underneath. Therefore, the charge combined with the charge does not exist. When the voltage is applied, as shown in FIG. 8(b), no bypass conduction remains. The charge on the surface of the by-product 51 is completely removed, and the adsorption of the substrate G by the charge does not occur. Further, the adsorption electrode 31 is formed so as to extend only the portion corresponding to the bank 41, but does not form an electric charge which affects the electric charge existing on the adsorption electrode 31 and the electric charge existing on the embankment 41 (conductive by-product). The combination includes a state in which the adsorption electrode 31 does not exist in a portion corresponding to the bank 41.
又，如圖9所示，藉由在堤防41之上面設置溝41a，由於在溝41a的部份係副產物51不吸附於基板G，因此，即使在不存在有堤防41之溝41a的部份中基板G是藉由副產物51來進行吸附，亦能夠減少其面積。因此，能夠降低因存在有副產物51而造成之基板G的吸附力。 Further, as shown in Fig. 9, by providing the groove 41a on the upper surface of the bank 41, since the by-product 51 is not adsorbed to the substrate G in the portion of the groove 41a, even in the portion where the groove 41a of the bank 41 is not present, The substrate G in the portion is adsorbed by the by-product 51, and the area thereof can also be reduced. Therefore, the adsorption force of the substrate G due to the presence of the by-product 51 can be reduced.
藉由該些，能夠回避靜電吸附力無法被充份解除或因副產物使基板G與堤防41過度吸附的情況，在除電後將基板G上舉而從基板載置台4進行剝離時，能夠防止因吸附現象造成基板破裂及因殘留之電荷或剝離帶電造成元件被靜電破壞(ESD)的發生。 By this, it is possible to prevent the electrostatic adsorption force from being sufficiently removed or excessively adsorbing the substrate G and the bank 41 by by-products, and it is possible to prevent the substrate G from being lifted and removed from the substrate stage 4 after the charge is removed. The substrate is broken due to the adsorption phenomenon and the component is electrostatically destroyed (ESD) due to residual charge or stripping electrification.
另一方面，因為吸附電極31不存在於與基板 載置台4之堤防41相對應的部份，因此有周緣部之基板保持力下降且來自空間7之傳熱氣體的洩漏量增大之虞。但是，使用評價電極進行洩漏量調查的結果，相對於吸附電極31存在於與堤防41相對應之部份的情況下是3.77sccm，而吸附電極31不存在於與堤防41相對應之部份的情況下是3.8sccm，幾乎看不出有差異。 On the other hand, since the adsorption electrode 31 is not present in the substrate Since the portion of the bank 41 of the mounting table 4 corresponds to each other, the substrate holding force at the peripheral portion is lowered and the amount of leakage of the heat transfer gas from the space 7 is increased. However, as a result of the leak amount investigation using the evaluation electrode, it is 3.77 sccm in the case where the adsorption electrode 31 exists in a portion corresponding to the bank 41, and the adsorption electrode 31 does not exist in the portion corresponding to the bank 41. In the case of 3.8 sccm, there is almost no difference.
從該情況可確認即使吸附電極31不存在於與堤防41相對應之部份，亦能夠獲得充份的基板保持力。 From this, it was confirmed that even if the adsorption electrode 31 does not exist in the portion corresponding to the bank 41, a sufficient substrate holding force can be obtained.
又，雖然藉由在堤防41設置降低因副產物造成之吸附的溝41a，而導致多少降低基板G的吸附力，但藉由確保與堤防41之基板G接觸之部份的面積，能夠使傳熱氣體洩漏量增加等之不良影響幾乎不會發生。 Further, by providing the trench 41a for reducing the adsorption by the by-products in the bank 41, the adsorption force of the substrate G is somewhat lowered, but by ensuring the area of the portion in contact with the substrate G of the bank 41, it is possible to transmit The adverse effects such as an increase in the amount of hot gas leakage hardly occur.
能夠藉由例如在堤防41沿著圓周方向形成1個以上的溝41a，來降低因副產物之附著造成之基板G與堤防41之間的吸附力，此時，以使傳熱氣體洩漏量落在容許範圍內來確保堤防41之溝41a以外之部份的寬度為較佳，從該觀點看來，堤防41之寬度係設成為載置有溝41a除外之基板之部份的寬度合計為5mm以上較佳。又，將溝41a設為2以上並以均等的間隔、寬度形成溝41a，藉此，更可同時提高降低因副產物之附著造成之基板G與堤防41之間之吸附力的效果及降低洩漏兩者之效果，故較佳。即，藉由以均等的間隔、寬度形成溝41a，不僅能夠降低基板-堤防間的吸附力，即使在基板-堤防間產生有副產物亦能夠均等地分散對基板G的附著力，並能夠防止 因局部之基板的吸附造成基板或裝置的破損。又，因為藉由設置複數個溝41a，使每次從高壓之內側膨脹(減壓)至溝而到達低壓的外側，因此能夠進一步降低傳熱氣體洩漏的洩漏量。且，為了降低因副產物之附著造成之基板G與堤防41之間的吸附力，而以取代設置此種溝41a或增加設置溝41a、使堤防41之表面變粗糙等形成可迴避副產物吸附於基板G之其他形態的凹部也是有效的。 For example, by forming one or more grooves 41a in the circumferential direction in the bank 41, the adsorption force between the substrate G and the bank 41 due to the adhesion of the by-products can be reduced, and at this time, the amount of the heat transfer gas leaks. It is preferable to ensure the width of the portion other than the groove 41a of the embankment 41 within the allowable range. From this point of view, the width of the embankment 41 is set to be 5 mm in width of the portion of the substrate on which the groove 41a is placed. The above is preferred. In addition, the groove 41a is formed into two or more grooves, and the groove 41a is formed at equal intervals and widths, whereby the effect of reducing the adsorption force between the substrate G and the bank 41 due to the adhesion of by-products can be improved and the leakage can be reduced. The effect of both is better. In other words, by forming the grooves 41a at equal intervals and widths, it is possible to prevent not only the adsorption force between the substrate and the bank, but also the adhesion to the substrate G evenly by the presence of by-products between the substrate and the bank, and it is possible to prevent Damage to the substrate or device due to adsorption of a local substrate. Further, since a plurality of grooves 41a are provided, each time from the inside of the high pressure (decompression) to the groove and to the outside of the low pressure, the amount of leakage of the heat transfer gas can be further reduced. Further, in order to reduce the adsorption force between the substrate G and the bank 41 caused by the adhesion of the by-products, the adsorption of by-products may be formed by replacing such grooves 41a or increasing the grooves 41a and roughening the surface of the bank 41. Other recesses in the form of the substrate G are also effective.
另外，本發明係不限定於上述實施形態，可進行各種變形。例如，在上述實施形態中，已對將本發明適用於平行平板型電漿蝕刻裝置之例子進行了說明，但並不限於此，亦可以是使用感應耦合型等其他電漿生成手段者，又並不限於電漿蝕刻，亦可適用於電漿灰化、電漿CVD等其他電漿處理裝置，且不限於電漿處理裝置，而可全盤地適用於將基板載置於基板載置台並進行處理的基板處理裝置。又，在上述實施形態中雖已對適用於FPD用玻璃基板之例子進行了說明，但不限於此，無需贅言地亦可適用於半導體基板等其他基板。 Further, the present invention is not limited to the above embodiment, and various modifications can be made. For example, in the above-described embodiment, an example in which the present invention is applied to a parallel plate type plasma etching apparatus has been described. However, the present invention is not limited thereto, and other plasma generating means such as an inductive coupling type may be used. It is not limited to plasma etching, and can be applied to other plasma processing devices such as plasma ashing and plasma CVD, and is not limited to the plasma processing device, but can be fully applied to the substrate placed on the substrate mounting table and performed. Processed substrate processing apparatus. Further, in the above-described embodiment, an example of the glass substrate for FPD has been described. However, the present invention is not limited thereto, and it is not necessarily used for other substrates such as a semiconductor substrate.
1‧‧‧電漿蝕刻裝置 1‧‧‧ plasma etching device
2‧‧‧腔室 2‧‧‧ chamber
4‧‧‧基板載置台 4‧‧‧Substrate mounting table
4a‧‧‧基材 4a‧‧‧Substrate
4b‧‧‧底部絕緣構件 4b‧‧‧Bottom insulation member
4c‧‧‧上部絕緣構件 4c‧‧‧Upper insulation member
4d‧‧‧側部絕緣構件 4d‧‧‧Side insulation members
5‧‧‧冷媒流路 5‧‧‧Refrigerant flow path
7‧‧‧空間 7‧‧‧ Space
8‧‧‧支撐構件 8‧‧‧Support members
11‧‧‧噴頭 11‧‧‧ sprinkler
12‧‧‧氣體擴散空間 12‧‧‧ gas diffusion space
13‧‧‧吐出孔 13‧‧‧Spit hole
14‧‧‧氣體導入口 14‧‧‧ gas inlet
15‧‧‧處理氣體供給管 15‧‧‧Processing gas supply pipe
16‧‧‧閥 16‧‧‧ valve
17‧‧‧質流控制器 17‧‧‧Flow Controller
18‧‧‧處理氣體供給源 18‧‧‧Processing gas supply
19‧‧‧排氣管 19‧‧‧Exhaust pipe
20‧‧‧排氣裝置 20‧‧‧Exhaust device
21‧‧‧搬入搬出口 21‧‧‧ Move in and out
22‧‧‧閘閥 22‧‧‧ gate valve
23‧‧‧供電線 23‧‧‧Power supply line
24‧‧‧匹配器 24‧‧‧matcher
25‧‧‧高頻電源 25‧‧‧High frequency power supply
26‧‧‧傳熱氣體流路 26‧‧‧heat transfer gas flow path
27‧‧‧傳熱氣體供給機構 27‧‧‧Transmission gas supply mechanism
30‧‧‧靜電夾盤 30‧‧‧Electrical chuck
31‧‧‧吸附電極 31‧‧‧Adsorption electrode
32‧‧‧供電線 32‧‧‧Power supply line
33‧‧‧直流電源 33‧‧‧DC power supply
34‧‧‧開關 34‧‧‧ switch
40‧‧‧控制部 40‧‧‧Control Department
41‧‧‧堤防 41‧‧‧dike
41a‧‧‧溝 41a‧‧‧ditch
42‧‧‧內側部份 42‧‧‧ inside part
G‧‧‧基板 G‧‧‧Substrate
Claims (10)
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| JP2012250809A JP6010433B2 (en) | 2012-11-15 | 2012-11-15 | Substrate mounting table and substrate processing apparatus |
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| TW201438096A true TW201438096A (en) | 2014-10-01 |
| TWI595555B TWI595555B (en) | 2017-08-11 |
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| JP (1) | JP6010433B2 (en) |
| KR (1) | KR20140063415A (en) |
| CN (1) | CN103824800B (en) |
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| CN108364845B (en) * | 2018-03-20 | 2020-05-05 | 武汉华星光电技术有限公司 | Dry etching equipment |
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| JP7101029B2 (en) * | 2018-04-12 | 2022-07-14 | 東京エレクトロン株式会社 | Electrostatic chuck, board processing device, and board holding method |
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| KR102550586B1 (en) * | 2018-10-31 | 2023-06-30 | 캐논 톡키 가부시키가이샤 | Adsorption and alignment method, adsorption system, film forming method, film forming apparatus, and manufacturing method of electronic device |
| JP7228989B2 (en) * | 2018-11-05 | 2023-02-27 | 東京エレクトロン株式会社 | PLACE, EDGE RING POSITIONING METHOD, AND SUBSTRATE PROCESSING APPARATUS |
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| JPH05267436A (en) * | 1992-03-19 | 1993-10-15 | Fujitsu Ltd | Electrostatic chuck |
| US5636098A (en) * | 1994-01-06 | 1997-06-03 | Applied Materials, Inc. | Barrier seal for electrostatic chuck |
| US5822171A (en) * | 1994-02-22 | 1998-10-13 | Applied Materials, Inc. | Electrostatic chuck with improved erosion resistance |
| KR100666039B1 (en) * | 2003-12-05 | 2007-01-10 | 동경 엘렉트론 주식회사 | Electrostatic chuck |
| JP4642550B2 (en) * | 2004-10-29 | 2011-03-02 | 東京エレクトロン株式会社 | Substrate mounting table, substrate processing apparatus, and substrate temperature control method |
| JP5003102B2 (en) * | 2006-10-27 | 2012-08-15 | 東京エレクトロン株式会社 | Electrostatic chuck diagnostic method, vacuum processing apparatus, and storage medium |
| JP5222442B2 (en) * | 2008-02-06 | 2013-06-26 | 東京エレクトロン株式会社 | Substrate mounting table, substrate processing apparatus, and temperature control method for substrate to be processed |
| JP5243465B2 (en) * | 2010-01-28 | 2013-07-24 | パナソニック株式会社 | Plasma processing equipment |
| JP5871453B2 (en) * | 2010-05-20 | 2016-03-01 | 東京エレクトロン株式会社 | Plasma processing apparatus, substrate holding mechanism, and substrate misalignment detection method |
| JP5869899B2 (en) * | 2011-04-01 | 2016-02-24 | 株式会社日立国際電気 | Substrate processing apparatus, semiconductor device manufacturing method, substrate processing method, and susceptor cover |
-
2012
- 2012-11-15 JP JP2012250809A patent/JP6010433B2/en not_active Expired - Fee Related
-
2013
- 2013-11-05 KR KR1020130133326A patent/KR20140063415A/en not_active Application Discontinuation
- 2013-11-11 TW TW102140864A patent/TWI595555B/en not_active IP Right Cessation
- 2013-11-15 CN CN201310573742.9A patent/CN103824800B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140063415A (en) | 2014-05-27 |
| TWI595555B (en) | 2017-08-11 |
| JP2014099519A (en) | 2014-05-29 |
| CN103824800A (en) | 2014-05-28 |
| JP6010433B2 (en) | 2016-10-19 |
| CN103824800B (en) | 2018-01-19 |
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