TWI608516B - Plasma processing apparatus, plasma processing method and memory media - Google Patents
Plasma processing apparatus, plasma processing method and memory media Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims description 137
- 238000003672 processing method Methods 0.000 title claims description 15
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- 238000001020 plasma etching Methods 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 26
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 24
- 238000009832 plasma treatment Methods 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- 239000001257 hydrogen Substances 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- 230000007246 mechanism Effects 0.000 claims description 9
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- 229910052732 germanium Inorganic materials 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 5
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- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
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- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 125000001309 chloro group Chemical group Cl* 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Description
本發明係關於進行電漿蝕刻等電漿處理的電漿處理裝置及電漿處理方法。 The present invention relates to a plasma processing apparatus and a plasma processing method for performing plasma processing such as plasma etching.
在平板顯示器(FPD)或半導體元件的製造過程中，對於被處理基板，大多使用蝕刻、濺鍍、CVD(化學氣相沉積)等電漿處理。 In the manufacturing process of a flat panel display (FPD) or a semiconductor element, plasma treatment such as etching, sputtering, or CVD (Chemical Vapor Deposition) is often used for the substrate to be processed.
在進行以電漿蝕刻作為例如電漿處理的情況下，使處理氣體在電漿中解離活性化，並使生成之自由基等活性種與蝕刻對象膜產生反應。 In the case where plasma etching is performed as, for example, plasma treatment, the treatment gas is dissociated and activated in the plasma, and the active species such as generated radicals are reacted with the etching target film.
蝕刻對象膜為化學反應性較高的物質時，觀察到因負載的影響而使被處理基板之周邊部的蝕刻速率變高的傾向，而大多的情形會使蝕刻均勻性速度受到限制。 When the etching target film is a substance having high chemical reactivity, it is observed that the etching rate of the peripheral portion of the substrate to be processed tends to be high due to the influence of the load, and in many cases, the etching uniformity speed is limited.
作為在該周緣部中抑制蝕刻速率提高之傾向的技術，已知有以包圍被處理基板的方式配置作為垂直側壁的整流壁，抑制被處理基板周緣部之處理氣體的流動(例如專利文獻1)。又，亦考慮將記載於專利文獻2之自由基消耗量較多的構件作為犧牲材，配置於被處理基板 的外側區域而減低負載造成之影響的方法。 In the technique of suppressing the increase in the etching rate in the peripheral portion, it is known that the rectifying wall as the vertical side wall is disposed so as to surround the substrate to be processed, and the flow of the processing gas in the peripheral portion of the substrate to be processed is suppressed (for example, Patent Document 1) . In addition, it is also considered that the member having a large amount of radical consumption described in Patent Document 2 is disposed as a sacrificial material on the substrate to be processed. The outer area reduces the impact of the load.
[專利文獻1]日本特開2003-243364號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2003-243364
[專利文獻2]日本特開平5-190502號公報 [Patent Document 2] Japanese Patent Laid-Open No. Hei 5-190502
但是，在使用整流壁(RECTIFYING WALL)的情況下，按照蝕刻對象膜的種類或蝕刻條件(處理程式)而必須使整流壁最佳化，此方式相當繁複。又，在使用自由基消耗量較多之犧牲材的情況下，由於犧牲材為消耗品必須定期更換，因此更換相當麻煩或花費成本。又，兩種技術在連續處理複數個蝕刻層的情況下等，會對其他蝕刻對象膜造成影響而發生工程上的問題。 However, when a rectifying wall (RECTIFYING WALL) is used, it is necessary to optimize the rectifying wall according to the type of the etching target film or the etching condition (processing program), which is quite complicated. Further, in the case of using a sacrificial material having a large amount of radical consumption, since the sacrificial material is required to be periodically replaced, the replacement is quite troublesome or costly. Further, in the case where the plurality of etching layers are continuously processed, the two techniques affect the other etching target film and cause engineering problems.
本發明係鑑於該情形進行研發者，提供一種不需使用整流壁或自由基消耗量較多的犧牲材，就可減低被處理基板之周邊部的反應性並進行均勻之電漿處理的電漿處理裝置及電漿處理方法為課題。 The present invention has been made in view of the circumstances, and provides a plasma which can reduce the reactivity of the peripheral portion of the substrate to be processed and perform uniform plasma treatment without using a rectifying wall or a sacrificial material having a large amount of radical consumption. The processing device and the plasma processing method are problems.
為了解決上述課題，在本發明的第1觀點中，提供一種電漿處理裝置，係對基板施予電漿處理的電 漿處理裝置，其特徵係具備：處理容器，用於收容基板並施予電漿處理；基板載置台，在前述處理容器內載置基板；處理氣體供給機構，對前述處理容器內供給處理氣體；排氣機構，對前述處理容器內進行排氣；電漿生成手段，在前述處理容器內生成前述處理氣體的電漿；及捕集氣體(trapped gas)供給機構，對前述基板載置台上之基板的周邊部供給捕集前述電漿中之活性種的捕集氣體。 In order to solve the above problems, in a first aspect of the present invention, a plasma processing apparatus for applying a plasma treatment to a substrate is provided. A slurry processing apparatus comprising: a processing container for accommodating a substrate and applying a plasma treatment; a substrate mounting table for placing a substrate in the processing container; and a processing gas supply mechanism for supplying a processing gas into the processing container; An exhaust mechanism that exhausts the inside of the processing container; a plasma generating means that generates a plasma of the processing gas in the processing container; and a trapped gas supply means for the substrate on the substrate mounting table The peripheral portion is supplied with a trap gas for trapping the active species in the plasma.
在本發明之第2觀點中，提供一種電漿處理 方法，係對基板施予電漿處理的電漿處理方法，其特徵係，在將基板載置於處理容器內之基板載置台的狀態下，對處理容器內供給處理氣體而在前述處理容器內生成處理氣體的電漿，並對基板進行電漿處理，此時，對基板之周邊部供給捕集前述電漿中的活性種之捕集氣體。 In a second aspect of the present invention, a plasma treatment is provided A plasma processing method for applying a plasma treatment to a substrate, characterized in that, in a state in which a substrate is placed on a substrate mounting table in a processing container, a processing gas is supplied into the processing container in the processing container. A plasma of the processing gas is generated, and the substrate is subjected to plasma treatment. At this time, the trapping gas for trapping the active species in the plasma is supplied to the peripheral portion of the substrate.
在上述第1觀點及第2觀點中，前述電漿處 理係亦可為電漿蝕刻處理。又，前述處理氣體係包含F、Cl、O中至少1種的氣體，前述捕集氣體可設為氫氣。 又，能夠將相對於前述處理氣體中之活性種之原子數之前述捕集氣體之原子數的比率設為17~80%。 In the above first aspect and second aspect, the aforementioned plasma portion The system can also be plasma etched. Further, the processing gas system includes at least one of F, Cl, and O, and the trapping gas may be hydrogen. Further, the ratio of the number of atoms of the trap gas to the number of atoms of the active species in the processing gas can be set to 17 to 80%.
在前述電漿處理為電漿蝕刻處理的情況下， 蝕刻對象係可設為形成於基板上之Si膜、SiNx膜、Al膜的任一。在蝕刻對象為Si膜的情況下，使用F作為活性種，相對於前述處理氣體中之活性種之原子數之前述捕集氣體之原子數的比率亦可為40~80%。在蝕刻對象為SiNx膜的情況下，使用F與O作為活性種，相對於前述處理 氣體中之活性種之原子數之前述捕集氣體之原子數的比率亦可為17.1~34.3%。在蝕刻對象為Al膜的情況下，使用Cl作為活性種，相對於前述處理氣體中之活性種之原子數之前述捕集氣體之原子數的比率亦可為40~80%。 In the case where the plasma treatment is a plasma etching treatment, the etching target may be any one of a Si film, a SiN x film, and an Al film formed on a substrate. When the etching target is a Si film, the ratio of the number of atoms of the trapping gas to the number of atoms of the active species in the processing gas may be 40 to 80% using F as an active species. When the etching target is a SiN x film, the ratio of the number of atoms of the trapping gas to the number of atoms of the active species in the processing gas may be 17.1 to 34.3%, using F and O as active species. When the etching target is an Al film, Cl may be used as an active species, and the ratio of the number of atoms of the trapping gas to the number of atoms of the active species in the processing gas may be 40 to 80%.
在上述第1觀點中，前述捕集氣體供給機構 係亦可設於前述基板載置台之基板的周圍。又，前述處理氣體供給機構係具有噴頭，該噴頭係在前述處理容器內向前述基板載置台上之基板噴灑狀地供給處理氣體，前述捕集氣體供給機構係亦可設於前述噴頭的周圍。 In the above first aspect, the trap gas supply mechanism It may be provided around the substrate of the substrate mounting table. Further, the processing gas supply mechanism includes a shower head that supplies a processing gas to the substrate on the substrate mounting table in a sprayed manner in the processing container, and the trap gas supply mechanism may be provided around the shower head.
在本發明之第3觀點中，提供一種記憶媒 體，係在電腦上動作並記憶有控制電漿處理裝置用之程式的記憶媒體，其特徵係，前述程式在執行時，使電腦控制前述電漿處理裝置，以進行上述第2觀點之電漿處理方法。 In a third aspect of the present invention, a memory medium is provided The body is a memory medium that operates on a computer and stores a program for controlling the plasma processing device. The program is configured to cause the computer to control the plasma processing device during execution to perform the plasma of the second aspect. Approach.
根據本發明，在進行電漿處理時，對基板載置台上之基板的周邊部供給捕集電漿中的活性種之捕集氣體。因此，於基板之外周部，電漿處理率較大的情況下，能夠使其一部份的處理率降低，且能夠提高電漿處理分布的均勻性。 According to the invention, when the plasma treatment is performed, the trapping gas of the active species in the plasma is supplied to the peripheral portion of the substrate on the substrate mounting table. Therefore, when the plasma processing rate is large in the outer peripheral portion of the substrate, the processing rate of a part can be reduced, and the uniformity of the plasma processing distribution can be improved.
1，1'‧‧‧電漿蝕刻裝置(電漿處理裝置) 1,1 ' ‧‧‧ Plasma etching device (plasma processing device)
2，2'‧‧‧腔室(處理容器) 2,2 ' ‧‧ ‧ chamber (processing container)
4‧‧‧基板載置台 4‧‧‧Substrate mounting table
5‧‧‧基材 5‧‧‧Substrate
6‧‧‧絕緣構件 6‧‧‧Insulating components
7‧‧‧遮蔽環 7‧‧‧ shadow ring
14a，58‧‧‧第1高頻電源 14a, 58‧‧‧1st high frequency power supply
14b‧‧‧第2高頻電源 14b‧‧‧2nd high frequency power supply
16‧‧‧捕集氣體吐出噴嘴 16‧‧‧ Capture gas discharge nozzle
17‧‧‧氣體吐出口 17‧‧‧ gas discharge
18‧‧‧氣體流路 18‧‧‧ gas flow path
19‧‧‧捕集氣體供給源 19‧‧‧ Capture gas supply
20‧‧‧噴頭 20‧‧‧ sprinkler
25‧‧‧處理氣體供給管 25‧‧‧Processing gas supply pipe
28‧‧‧處理氣體供給源 28‧‧‧Processing gas supply
29‧‧‧排氣管 29‧‧‧Exhaust pipe
30‧‧‧排氣裝置 30‧‧‧Exhaust device
31‧‧‧搬入搬出口 31‧‧‧ Move in and out
40‧‧‧控制部 40‧‧‧Control Department
55‧‧‧高頻天線 55‧‧‧High frequency antenna
G‧‧‧基板 G‧‧‧Substrate
[圖1]表示作為涉及本發明之第1實施形態之電漿處理裝置之電漿蝕刻裝置的剖面圖。 Fig. 1 is a cross-sectional view showing a plasma etching apparatus as a plasma processing apparatus according to a first embodiment of the present invention.
[圖2]部份性表示圖1之電漿蝕刻裝置之基板載置台的剖面圖。 Fig. 2 is a cross-sectional view partially showing a substrate stage of the plasma etching apparatus of Fig. 1.
[圖3]表示圖1之電漿蝕刻裝置之基板載置台的平面圖。 Fig. 3 is a plan view showing a substrate stage of the plasma etching apparatus of Fig. 1.
[圖4]表示捕集氣體吐出噴嘴之其他例子的剖面圖。 Fig. 4 is a cross-sectional view showing another example of a trap gas discharge nozzle.
[圖5]表示捕集氣體吐出噴嘴之另外其他例子的剖面圖。 Fig. 5 is a cross-sectional view showing still another example of the trap gas discharge nozzle.
[圖6]表示作為涉及本發明之第2實施形態之電漿處理裝置之電漿蝕刻裝置的剖面圖。 Fig. 6 is a cross-sectional view showing a plasma etching apparatus as a plasma processing apparatus according to a second embodiment of the present invention.
[圖7]用於說明實驗例1的模式圖。 FIG. 7 is a schematic view for explaining Experimental Example 1. FIG.
[圖8]表示朝作為對a-Si膜進行電漿蝕刻時之捕集氣體之H2氣體之基板周邊部的供給量與蝕刻分布之關係的圖。 FIG. 8 is a view showing a relationship between a supply amount of a peripheral portion of a substrate and an etching distribution of H 2 gas as a trapping gas when plasma etching is performed on an a-Si film.
[圖9]表示朝作為對SiNx膜進行電漿蝕刻時之捕集氣體之H2氣體之基板周邊部的供給量與蝕刻分布之關係的圖。 FIG. 9 is a view showing the relationship between the supply amount of the peripheral portion of the substrate and the etching distribution of the H 2 gas which is a trapping gas when the SiN x film is plasma-etched.
[圖10]表示朝作為對Al膜進行電漿蝕刻時之捕集氣體之H2氣體之基板周邊部的供給量與蝕刻分布之關係的圖。 FIG. 10 is a view showing the relationship between the supply amount of the peripheral portion of the substrate and the etching distribution of the H 2 gas as the trapping gas when the Al film is plasma-etched.
[圖11]表示a-Si膜蝕刻時之供給至基板周邊部之H2氣體的量與電漿之發光頻譜之關係的圖。 Fig. 11 is a view showing the relationship between the amount of H 2 gas supplied to the peripheral portion of the substrate during etching of the a-Si film and the emission spectrum of the plasma.
[圖12]表示在實驗例2假想之LTPS接觸性蝕刻時 之蝕刻對象之層積構造的剖面圖。 [Fig. 12] shows the LTPS contact etching in the experimental example 2 A cross-sectional view of the laminated structure of the etched object.
[圖13]表示有無供給作為實驗例2之捕集氣體的H2氣體所造成之SiO2膜之蝕刻分布的圖。 Fig. 13 is a view showing the presence or absence of the etching distribution of the SiO 2 film by the supply of the H 2 gas as the trap gas of Experimental Example 2.
[圖14]表示有無供給作為實驗例2之捕集氣體的H2氣體所造成之SiNx膜之蝕刻分布的圖。 FIG. 14 is a view showing the presence or absence of the etching distribution of the SiN x film caused by the supply of the H 2 gas as the trap gas of Experimental Example 2.
[圖15]表示有無供給作為實驗例2之捕集氣體的H2氣體所造成之a-Si膜之蝕刻分布的圖。 Fig. 15 is a view showing the presence or absence of the etching distribution of the a-Si film by the supply of the H 2 gas as the trap gas of Experimental Example 2.
[圖16]表示實驗例3之結果的圖。 Fig. 16 is a view showing the results of Experimental Example 3.
以下，參閱添加圖式對本發明之實施形態進行說明。 Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
對在本發明中作為電漿處理裝置之一例的電漿蝕刻裝置進行說明。 A plasma etching apparatus which is an example of a plasma processing apparatus in the present invention will be described.
首先，對第1實施形態進行說明。 First, the first embodiment will be described.
圖1係表示作為涉及本發明之第1實施形態之電漿處理裝置之電漿蝕刻裝置的剖面圖，圖2係部份性表示圖1之電漿蝕刻裝置之基板載置台的剖面圖，圖3係表示圖1之電漿蝕刻裝置之基板載置台的平面圖。 1 is a cross-sectional view showing a plasma etching apparatus as a plasma processing apparatus according to a first embodiment of the present invention, and FIG. 2 is a partial cross-sectional view showing a substrate mounting table of the plasma etching apparatus of FIG. 3 is a plan view showing a substrate stage of the plasma etching apparatus of Fig. 1.
如圖1所示，該電漿蝕刻裝置1，係構成為對FPD用之玻璃基板(以下僅記述為「基板」)G進行蝕刻之電容耦合型電漿蝕刻裝置。作為FPD，舉例有液晶顯示 器(LCD)、電致發光(Electro Luminescence；EL)顯示器、電漿顯示器面板(PDP)等。電漿蝕刻裝置1係具備作為收容當作被處理基板之基板G之處理容器的腔室2。腔室2係例如由表面被耐酸鋁處理(陽極氧化處理)後之鋁所構成，對應於基板G的形狀而被形成為四角筒形狀。 As shown in FIG. 1, the plasma etching apparatus 1 is a capacitive coupling type plasma etching apparatus which etches the glass substrate for FPD (hereinafter, only referred to as "substrate") G. As an FPD, an example is a liquid crystal display. (LCD), electroluminescence (EL) display, plasma display panel (PDP), and the like. The plasma etching apparatus 1 is provided with a chamber 2 as a processing container for accommodating the substrate G as a substrate to be processed. The chamber 2 is made of, for example, aluminum whose surface is treated with an alumite treatment (anodizing treatment), and is formed into a rectangular tube shape in accordance with the shape of the substrate G.
在腔室2內的底壁，設有經由由絕緣材料所構成之絕緣板3而作為下部電極之功能的基板載置台4。基板載置台4係由金屬例如鋁所構成，具備基材5與絕緣構件6；該基材5係具有形成於上部之中央部的凸部5a及凸部5a周圍的凸緣部5b，由金屬例如鋁所構成，該絕緣構件6係設於凸部5a上，具有基板G的載置面。在絕緣構件6的內部設有平面狀的吸附電極6a，藉由該些而構成有靜電吸附基板G用的靜電夾盤。在凸緣部5b上，係設有包圍所載置之基板G而由框狀之絕緣體所構成的遮蔽環7。又，以包圍基材5周圍的方式而設有絕緣環8。絕緣構件6、遮蔽環7、絕緣環8，係例如以氧化鋁般之絕緣性陶瓷來予以構成。 The bottom wall in the chamber 2 is provided with a substrate mounting table 4 that functions as a lower electrode via an insulating plate 3 made of an insulating material. The substrate mounting table 4 is made of a metal such as aluminum, and includes a base material 5 and an insulating member 6; the base material 5 has a convex portion 5a formed at a central portion of the upper portion and a flange portion 5b around the convex portion 5a, and is made of metal. For example, aluminum is provided, and the insulating member 6 is provided on the convex portion 5a and has a mounting surface of the substrate G. A planar adsorption electrode 6a is provided inside the insulating member 6, and an electrostatic chuck for the electrostatic adsorption substrate G is formed by these. The flange portion 5b is provided with a shield ring 7 which is formed of a frame-shaped insulator surrounding the substrate G placed thereon. Further, an insulating ring 8 is provided to surround the periphery of the substrate 5. The insulating member 6, the shielding ring 7, and the insulating ring 8 are formed, for example, of an insulating ceramic such as alumina.
在基材5中連接有供給高頻電力用的供電線12，該供電線12為分岐狀，在一方的分岐線連接有匹配器13a與電漿生成(源極)用的第1高頻電源14a，另一方的分岐線連接有匹配器13b與偏壓施加用的第2高頻電源14b。從第1高頻電源14a，電漿生成用之例如13.56MHz的高頻電力被施加於基材5，藉此，基板載置台4係 作為下部電極的功能。又，從第2高頻電源14b，偏壓用之例如3.2MHz的高頻電力被施加於基材5，藉此，可有效地將電漿中的離子引入至基板G。另外，亦可設置一個兼作為電漿生成與偏壓施加用的高頻電源。在吸附電極6a中連接有直流電源15，直流電壓被施加於吸附電極6a，而藉由庫倫力使基板G吸附於絕緣構件6的載置面。 A power supply line 12 for supplying high-frequency power is connected to the base material 5, and the power supply line 12 has a branching shape, and a first high-frequency power source for the matching unit 13a and the plasma generation (source) is connected to one of the branch lines. 14a, the other branching line is connected to the matching unit 13b and the second high-frequency power source 14b for bias application. From the first high-frequency power source 14a, high-frequency power of, for example, 13.56 MHz for plasma generation is applied to the substrate 5, whereby the substrate stage 4 is attached. As a function of the lower electrode. Further, from the second high-frequency power source 14b, high-frequency power of, for example, 3.2 MHz for biasing is applied to the substrate 5, whereby ions in the plasma can be efficiently introduced to the substrate G. Alternatively, a high frequency power source for both plasma generation and bias application may be provided. A DC power source 15 is connected to the adsorption electrode 6a, and a DC voltage is applied to the adsorption electrode 6a, and the substrate G is attracted to the mounting surface of the insulating member 6 by Coulomb force.
在遮蔽環7的上面設有呈框狀的捕集氣體吐 出噴嘴16，該捕集氣體吐出噴嘴16係吐出以氫氣(H2氣體)作為捕集電漿中之活性種(自由基)用的捕集氣體，以使在該全周中包圍基板G的載置面。在捕集氣體吐出噴嘴16之上面係遍及全周形成有複數個氣體吐出口17。在捕集氣體吐出噴嘴16連接有氣體流路18，在氣體流路18之另一端連接有供給作為捕集氣體之氫氣的捕集氣體供給源19。且，作為捕集氣體之氫氣，係從捕集氣體供給源19起經由氣體流路18至捕集氣體吐出噴嘴16，從複數個氣體吐出口17吐出，而被供給至基板載置台4上之基板G的周邊部。 A trapped gas discharge nozzle 16 having a frame shape is formed on the upper surface of the shield ring 7, and the trap gas discharge nozzle 16 discharges hydrogen (H 2 gas) as an active species (radical) in the collected plasma. The gas is trapped so as to surround the mounting surface of the substrate G throughout the entire circumference. A plurality of gas discharge ports 17 are formed on the upper surface of the trap gas discharge nozzle 16 over the entire circumference. A gas flow path 18 is connected to the trap gas discharge nozzle 16, and a trap gas supply source 19 that supplies hydrogen gas as a trap gas is connected to the other end of the gas flow path 18. The hydrogen gas as the trapping gas is supplied from the trap gas supply source 19 to the trap gas discharge nozzle 16 through the gas flow path 18, and is discharged from the plurality of gas discharge ports 17 to be supplied to the substrate stage 4. The peripheral portion of the substrate G.
在基板載置台4中，進行基板G之收授用的 複數個升降銷(未圖示)係設成可對基板載置台4之上面(亦即絕緣構件6之上面)突沒，而基板G之收授係對從基板載置台4之上面突出至上方之狀態的升降銷予以進行。 In the substrate mounting table 4, the substrate G is received for receiving A plurality of lift pins (not shown) are provided so as to protrude from the upper surface of the substrate stage 4 (that is, the upper surface of the insulating member 6), and the support of the substrate G protrudes from the upper surface of the substrate stage 4 to the upper side. The lift pin in the state is carried out.
在腔室2的上部，以與基板載置台4相對向 的方式，設有對腔室2內供給處理氣體並且作為上部電極 之功能的噴頭20。噴頭20係在內部形成有使處理氣體擴散之氣體擴散空間21，在下面或與基板載置台4的相對面形成有吐出處理氣體的複數個吐出孔22。該噴頭20為接地狀態，與基板載置台4一起構成一對平行板電極。 In the upper portion of the chamber 2, facing the substrate stage 4 Means of supplying the processing gas to the chamber 2 and serving as the upper electrode The function of the nozzle 20 is. The head 20 is internally formed with a gas diffusion space 21 for diffusing the processing gas, and a plurality of discharge holes 22 for discharging the processing gas are formed on the lower surface or on the surface opposite to the substrate mounting table 4. The head 20 is in a grounded state and constitutes a pair of parallel plate electrodes together with the substrate stage 4.
在噴頭20的上面設有氣體導入口24，在該氣 體導入口24連接有處理氣體供給管25，該處理氣體供給管25係連接有處理氣體供給源28。在處理氣體供給管25中設有閥26及質流控制器27。從處理氣體供給源28供給蝕刻用之處理氣體。作為處理氣體，可使用在該領域中一般所使用的處理氣體，且根據處理的膜使用最合適的物質。作為該處理氣體，典型而言，可使用包含F、Cl、O中至少1種的氣體。該等會各別形成包含反應性較高的F、Cl、O之活性種(自由基)。 A gas introduction port 24 is provided on the upper surface of the shower head 20, in which the gas A process gas supply pipe 25 is connected to the body introduction port 24, and a process gas supply source 28 is connected to the process gas supply pipe 25. A valve 26 and a mass flow controller 27 are provided in the process gas supply pipe 25. A processing gas for etching is supplied from the processing gas supply source 28. As the processing gas, a processing gas generally used in the field can be used, and the most suitable substance is used depending on the treated film. As the processing gas, for example, a gas containing at least one of F, Cl, and O can be used. These groups each form an active species (free radical) containing highly reactive F, Cl, and O.
在腔室2之底壁的4個角落連接有排氣管29 (僅圖示2個)，該排氣管29連接有排氣裝置30且設有 未圖示之壓力調整閥。排氣裝置30係具備渦輪分子泵等之真空泵，藉此便可對腔室2內進行排氣而抽真空至預定的減壓環境。在腔室2的側壁形成有搬入搬出基板G用之搬入搬出口31，且設有開關該搬入搬出口31的閘閥32，搬入搬出口31開放時，藉由未圖示之搬送裝置，基板G會被搬入搬出至腔室2內外。 An exhaust pipe 29 is connected to four corners of the bottom wall of the chamber 2 (only two are shown), the exhaust pipe 29 is connected to the exhaust device 30 and is provided Pressure adjustment valve not shown. The exhaust device 30 is provided with a vacuum pump such as a turbo molecular pump, whereby the inside of the chamber 2 can be evacuated and evacuated to a predetermined reduced pressure environment. A loading/unloading port 31 for loading and unloading the substrate G is formed on the side wall of the chamber 2, and a gate valve 32 for opening and closing the loading/unloading port 31 is provided. When the loading/unloading port 31 is opened, the substrate G is transported by a transfer device (not shown). Will be moved in and out to the inside and outside of the chamber 2.
又，電漿蝕刻裝置1係具備控制部40，該控制部40係具有：具備控制電漿蝕刻裝置1之各構成部用之微處理器(電腦)的程序控制器。控制部40係更具有 使用者介面及記憶部，該使用者介面係由鍵盤或顯示器等所構成，該鍵盤係供操作員進行管理電漿蝕刻裝置1用之輸入指令等的輸入操作；該顯示器是使電漿蝕刻裝置1的運轉狀況可視化顯示。該記憶部是儲存有用以藉由製程控制器的控制來實現在電漿蝕刻裝置1所被實行的各種處理之控制程式，或用以因應處理條件來使處理實行於電漿處理裝置的各構成部之程式亦即處理程式。處理程式係被記憶於記憶部中的記憶媒體。記憶媒體係亦可為內藏於電腦之硬碟或半導體記憶體，或亦可為CDROM、DVD、快閃記憶體等的可攜帶性者。又，亦可從其他裝置例如經由專線來使處理程式適當傳送。且，因應所需，以來自使用者介面的指示等，從記憶部呼叫任意之處理程式，並使實行於程序控制器，在程序控制器的控制下，進行在電漿蝕刻裝置中之所期望的處理。 Further, the plasma etching apparatus 1 includes a control unit 40 including a program controller including a microprocessor (computer) for controlling each component of the plasma etching apparatus 1. The control unit 40 has more a user interface and a memory unit, the user interface being constituted by a keyboard or a display for the operator to perform an input operation for managing an input command or the like for the plasma etching apparatus 1; the display is a plasma etching apparatus The operating status of 1 is visualized. The memory unit stores a control program for realizing various processes performed in the plasma etching apparatus 1 by control of a process controller, or a configuration for performing processing on the plasma processing apparatus in response to processing conditions. The program of the department is also the processing program. The processing program is memorized in the memory medium in the memory unit. The memory medium can also be a hard disk or a semiconductor memory built in a computer, or can be a portable person such as a CDROM, a DVD, or a flash memory. Further, the processing program can be appropriately transmitted from another device, for example, via a dedicated line. And, in response to an instruction from the user interface, etc., call any processing program from the memory unit, and execute it in the program controller, under the control of the program controller, perform the desired in the plasma etching apparatus. Processing.
接下來，對上述構成之電漿蝕刻裝置1的處 理動作進行說明。以下的處理動作係在控制部40的控制下執行。 Next, at the place of the plasma etching apparatus 1 configured as described above The action is explained. The following processing operations are executed under the control of the control unit 40.
首先，藉由排氣裝置30對腔室2內進行排氣使成為預定壓力並開放閘閥32，經由搬入搬出口31從鄰接而被保持為真空的搬送室(未圖示)，藉由搬送裝置(未圖示)搬入基板G，在使未圖示之升降銷上升的狀態下，在其上接收基板G並使升降銷下降，藉此使基板G載置於基板載置台4上。使搬送裝置從腔室2退避後，關閉閘閥32。 First, the inside of the chamber 2 is exhausted by the exhaust device 30 to open the gate valve 32, and the transfer chamber (not shown) that is held in a vacuum by the loading/unloading port 31 is transported by the transport device. (Unillustrated) The substrate G is carried in the substrate G, and the substrate G is placed thereon and the lift pins are lowered in a state where the lift pins (not shown) are raised, whereby the substrate G is placed on the substrate stage 4. After the conveyance device is retracted from the chamber 2, the gate valve 32 is closed.
在該狀態下，從處理氣體供給源28經由處理 氣體供給管25及噴頭20對腔室2內供給處理氣體，並藉由壓力調整閥將腔室2內的壓力調整成預定真空度。 In this state, processing is performed from the processing gas supply source 28 The gas supply pipe 25 and the head 20 supply the process gas to the inside of the chamber 2, and the pressure in the chamber 2 is adjusted to a predetermined degree of vacuum by a pressure regulating valve.
且，從第1高頻電源14a經由匹配器13a對 基板載置台4(基材5)施加電漿生成用的高頻電力，使高頻電場產生於作為下部電極的基板載置台4與作為上部電極的噴頭20之間，而使腔室2內的處理氣體電漿化。 又，從第2高頻電源14b經由匹配器13b對基板載置台4(基材5)施加偏壓用的高頻電力，有效地將電漿中的離子引入至基板G。此時，從直流電源15對吸附電極6a施加直流電壓，藉此，經由電漿藉由庫倫力使基板G吸附固定於基板載置台4(絕緣構件6)的載置面。 And, from the first high frequency power source 14a via the matcher 13a The high-frequency electric power for plasma generation is applied to the substrate stage 4 (substrate 5), and a high-frequency electric field is generated between the substrate stage 4 as a lower electrode and the head 20 as an upper electrode, and the inside of the chamber 2 is provided. Process gas plasma. Moreover, the high frequency power for bias is applied to the substrate stage 4 (base material 5) from the second high frequency power source 14b via the matching device 13b, and ions in the plasma are efficiently introduced to the substrate G. At this time, a DC voltage is applied from the DC power source 15 to the adsorption electrode 6a, whereby the substrate G is adsorbed and fixed to the mounting surface of the substrate stage 4 (insulating member 6) by the Coulomb force via the plasma.
藉此，對基板G之預定的膜進行電漿蝕刻處 理。此時，作為處理氣體，根據處理的膜使用最合適的物質，例如藉由電漿生成包含反應性較高之F、Cl、O之活性種(自由基)，而可使用包含F、Cl、O中之至少1種的氣體。 Thereby, the predetermined film of the substrate G is plasma-etched. Reason. In this case, as the processing gas, the most suitable substance is used according to the treated film, for example, an active species (free radical) containing F, Cl, and O having high reactivity is formed by plasma, and F, Cl, and the like may be used. At least one gas of O.
在進行電漿蝕刻處理時，由於在基板G的周 邊部中存在很多未反應的處理氣體，因此，當蝕刻對象膜為化學反應性較高的物質時，會因負載效果而導致基板G之周邊部的蝕刻速率變高。 During the plasma etching process, due to the circumference of the substrate G Since a large amount of unreacted processing gas exists in the side portion, when the etching target film is a substance having high chemical reactivity, the etching rate of the peripheral portion of the substrate G is increased due to the load effect.
在此，在本實施形態中，從捕集氣體供給源 19經由氣體流路18，將氫氣作為捕集電漿中的活性種(自由基)之捕集氣體，從設於捕集氣體吐出噴嘴16之 複數個氣體吐出口17供給至基板G的周邊部。藉此，活性種(自由基)會在基板G的周邊部被捕集。具體而言，存在有包含反應性較高之F、Cl、O之活性種(自由基)的情況下，該些會在基板G之周邊部與氫氣進行反應而形成無助於HF、HCl、H2O般之蝕刻的成份，並從腔室2被排出。因此，在蝕刻速率較高之基板G的周邊部中，活性種(自由基)的量會減少且蝕刻速率會下降，而蝕刻速率在基板G的面內會被均勻化。 Here, in the present embodiment, hydrogen gas is used as a trapping gas for the active species (radicals) in the collected plasma from the trap gas supply source 19 via the gas flow path 18, and is provided in the trapping gas discharge nozzle. A plurality of gas discharge ports 17 of 16 are supplied to the peripheral portion of the substrate G. Thereby, the active species (radicals) are trapped in the peripheral portion of the substrate G. Specifically, when there are active species (radicals) containing highly reactive F, Cl, and O, these react with hydrogen gas at the peripheral portion of the substrate G to form HF, HCl, and The components etched like H 2 O are discharged from the chamber 2. Therefore, in the peripheral portion of the substrate G having a high etching rate, the amount of active species (radicals) is reduced and the etching rate is lowered, and the etching rate is uniformized in the plane of the substrate G.
如此一來，使用包含反應性較高的F、Cl、O 之活性種(自由基)時，可藉由對基板G之周邊部供給作為捕集氣體的氫氣來捕集該些活性種(自由基)，即使是氫自由基等其他的氫氣源，亦可作為捕集氣體的功能。 又，只要是能夠與活性種(自由基)進行反應而生成無助於蝕刻的成份，則亦可使用氫以外的捕集氣體。 In this way, the use of F, Cl, O containing higher reactivity In the case of the active species (free radicals), the active species (radicals) can be collected by supplying hydrogen gas as a trapping gas to the peripheral portion of the substrate G, and even other hydrogen sources such as hydrogen radicals can be used. As a function of trapping gas. Further, as long as it is capable of reacting with an active species (radical) to form a component which does not contribute to etching, a trap gas other than hydrogen may be used.
由於捕集氣體的流量越多則捕集活性種(自 由基)的効果越高，因此可藉由控制捕集氣體的流量而控制基板G之蝕刻速率的分布。在該情況下，捕集氣體的流量，係設成相對於活性種的原子量而使捕集氣體之原子量形成為17~80%的流量為較佳。 The active species are captured due to the higher the flow rate of trapped gas (from The higher the effect of the base, the controlled distribution of the etching rate of the substrate G can be controlled by controlling the flow rate of the trapped gas. In this case, it is preferable that the flow rate of the trapped gas is set to a flow rate of 17 to 80% of the atomic weight of the trapped gas with respect to the atomic weight of the active species.
作為具體例，在進行非晶矽(a-Si)膜的蝕刻 時，可使用SF6氣體來作為處理氣體，在使用氫(H2)氣體作為捕集氣體的情況下，以相對於作為活性種(自由基)的F原子量而H原子量形成為40~80%的流量來供給氫氣為較佳。又，在進行SiNx膜的蝕刻時，可使用SF6 氣體及氧氣(O2)氣體的混合氣體來作為反應種，在使用氫(H2)氣體作為捕集氣體的情況下，以相對於作為活性種(自由基)之F、O的原子量而H原子量形成為17.1~34.3%的流量來供給氫氣為較佳。且，在進行Al膜的蝕刻時，可使用BCl3、Cl2，在使用氫(H2)氣體作為捕集氣體的情況下，以相對於作為活性種(自由基)之Cl原子量而H原子量形成為40~80%的流量來供給氫氣為較佳。 As a specific example, when etching an amorphous germanium (a-Si) film, SF 6 gas can be used as a processing gas, and when hydrogen (H 2 ) gas is used as a trap gas, it is relatively active. It is preferable to supply hydrogen gas by supplying the amount of F atoms (free radicals) and the amount of H atoms to a flow rate of 40 to 80%. Further, when etching the SiN x film, a mixed gas of SF 6 gas and oxygen (O 2 ) gas can be used as the reaction species, and when hydrogen (H 2 ) gas is used as the trap gas, It is preferable to supply hydrogen gas as the atomic weight of F and O of the active species (radicals) and to form a hydrogen gas at a flow rate of 17.1 to 34.3%. Further, in the etching of the Al film, BCl 3 or Cl 2 may be used, and in the case where hydrogen (H 2 ) gas is used as the trap gas, the amount of H atoms is relative to the amount of Cl atoms as the active species (radicals). It is preferred to form a flow rate of 40 to 80% to supply hydrogen gas.
處理結束後，使第1高頻電源14a及第2高 頻電源14b關閉並停止對吸附電極6a供電而解除靜電吸附，藉由升降銷(未圖示)來上舉基板G，開啟閘閥32而將處理後的基板G從搬入搬出口31搬出。 After the processing is completed, the first high frequency power source 14a and the second high are made high. The frequency power source 14b is turned off, the power supply to the adsorption electrode 6a is stopped, the electrostatic adsorption is released, the substrate G is lifted by a lift pin (not shown), the gate valve 32 is opened, and the processed substrate G is carried out from the loading/unloading port 31.
在本實施形態中，由於對基板G之周邊部供 給捕集活性種(自由基)的捕集氣體而減少基板G之周邊部之活性種(自由基)的量，因此，能夠使基板G之周邊部的蝕刻速率降低而進行面內均勻性較高的電漿蝕刻。如此一來，不必使用整流壁或犧牲材，就能夠使基板G之周邊部的蝕刻速率降低，因此，可解消以下等問題，係包括：按照使用整流壁時之蝕刻對象膜的種類或蝕刻條件(處理程式)而必須使整流壁最佳化的問題、或使用犧牲材時因定期更換所耗費之時間或成本的問題、或在該些兩者中連續處理有問題之複數個蝕刻層等時，會對其他蝕刻對象膜造成影響。 In the present embodiment, the peripheral portion of the substrate G is supplied. By trapping the trapping gas of the active species (radicals) and reducing the amount of active species (radicals) in the peripheral portion of the substrate G, the etching rate of the peripheral portion of the substrate G can be lowered to achieve in-plane uniformity. High plasma etching. In this way, the etching rate of the peripheral portion of the substrate G can be reduced without using the rectifying wall or the sacrificial material. Therefore, the following problems can be solved, including the type of the etching target film or the etching condition when the rectifying wall is used. (processing program), the problem of optimizing the rectifying wall, or the time or cost of periodically replacing the sacrificial material, or the continuous processing of the problematic plurality of etching layers in the two It will affect other films to be etched.
作為捕集氣體之氫氣的供給形態，係只要能 夠供給至基板G的周邊部則不限於圖1之形態。例如，如 圖4所示，亦可在遮蔽環7的側面安裝捕集氣體吐出噴嘴16，又，如圖5所示，亦可在噴頭20的外周部設置捕集氣體吐出噴嘴16並從基板G的上方向基板G的周邊部供給氫氣。 The supply form of hydrogen as a trapping gas is as long as it can The peripheral portion that is supplied to the substrate G is not limited to the form of FIG. For example, such as As shown in Fig. 4, the trap gas discharge nozzle 16 may be attached to the side surface of the shield ring 7, and as shown in Fig. 5, the trap gas discharge nozzle 16 may be provided on the outer peripheral portion of the head 20 from the substrate G. Hydrogen gas is supplied to the peripheral portion of the direction substrate G.
接下來，對本發明之第2實施形態進行說明。 Next, a second embodiment of the present invention will be described.
圖6係表示作為涉及本發明之第2實施形態之電漿處理裝置之電漿蝕刻裝置的剖面圖。 Fig. 6 is a cross-sectional view showing a plasma etching apparatus as a plasma processing apparatus according to a second embodiment of the present invention.
如圖6所示，該電漿蝕刻裝置1'係構成為感應耦合型電漿蝕刻裝置。在圖6中，與圖1共通的部份係標記相同符號來簡略其說明。 As shown in FIG. 6, the plasma etching apparatus 1 ' is configured as an inductively coupled plasma etching apparatus. In FIG. 6, the same portions as those in FIG. 1 are denoted by the same reference numerals to simplify the description thereof.
該電漿蝕刻裝置1'之腔室2'，係頂壁52由例如Al2O3等之陶瓷或石英般的介電質所構成，除了在頂壁52的下側部份嵌入有處理氣體供給用之呈十字狀的淋浴框體51之外，其他是與腔室2相同的構成。 The chamber 2 ' of the plasma etching apparatus 1 ' is formed of a ceramic or quartz-like dielectric such as Al 2 O 3 except that a processing gas is embedded in a lower portion of the top wall 52. The other configuration is the same as that of the chamber 2 except for the shower frame 51 having a cross shape.
淋浴框體51係以導電性材料，例如被陽極氧化處理的鋁所構成。在該淋浴框體51中形成有水平延伸的氣體流路53，在該氣體流路53中連通有朝下方延伸的複數個氣體吐出孔54。另一方面，在頂壁52之上面中央設有氣體導入口24，與圖1之裝置相同，氣體導入口24係連接有處理氣體供給管25，該處理氣體供給管25係連接有處理氣體供給源28。 The shower housing 51 is made of a conductive material such as anodized aluminum. A horizontally extending gas flow path 53 is formed in the shower casing 51, and a plurality of gas discharge holes 54 extending downward are connected to the gas flow path 53. On the other hand, a gas introduction port 24 is provided at the center of the upper surface of the top wall 52. Similarly to the device of Fig. 1, the gas introduction port 24 is connected to a process gas supply pipe 25 to which a process gas supply is connected. Source 28.
沿著頂壁52的上面設有高頻(RF)天線 55，高頻天線55連接有供電線56，該供電線56連接有匹配器57及電漿生成(源極)用的第1高頻電源58。從第1高頻電源58例如頻率為13.56MHz的高頻電力被供給至高頻天線55，藉此，在腔室2'內形成感應電場，藉由該感應電場使從淋浴框體51吐出的處理氣體會被電漿化。 A high frequency (RF) antenna 55 is disposed along the upper surface of the top wall 52, and a power supply line 56 is connected to the high frequency antenna 55. The power supply line 56 is connected to the matching unit 57 and the first high frequency for plasma generation (source). Power source 58. From the first high-frequency power source 58, for example, high-frequency power having a frequency of 13.56 MHz is supplied to the high-frequency antenna 55, whereby an induced electric field is formed in the chamber 2 ' , and the induced electric field is discharged from the shower casing 51. The process gas is plasmad.
另一方面，基板載置台4的基材5連接有供 電線12，該供電線12僅連接有匹配器13b及偏壓施加用的第2高頻電源14b。 On the other hand, the substrate 5 of the substrate stage 4 is connected to The electric wire 12 is connected to only the matching device 13b and the second high-frequency power supply 14b for bias application.
在該電漿蝕刻裝置1'中，與第1實施形態相 同，將基板G載置於基板載置台4上，從處理氣體供給源28經由處理氣體供給管25及淋浴框體51將處理氣體供給至腔室2'內，並藉由壓力調整閥將腔室2'內的壓力調整成預定真空度。接下來，從第1高頻電源58對高頻天線55施加高頻電力，藉此，經由由介電質所構成之頂壁52，在腔室2'內形成感應電場。如此一來，藉由所形成的感應電場，處理氣體會在腔室2'內進行電漿化，而生成高密度的感應耦合電漿，並對基板G進行電漿蝕刻處理。此時，從第2高頻電源14b經由匹配器13b對基板載置台4(基材5)施加偏壓用的高頻電力，有效地將電漿中的離子引入至基板G，藉由從直流電源15對吸附電極6a施加直流電壓，基板G會經由電漿藉由庫倫力而吸附固定於基板載置台4(絕緣構件6)的載置面。 In the plasma etching apparatus 1 ' , as in the first embodiment, the substrate G is placed on the substrate mounting table 4, and the processing gas is supplied from the processing gas supply source 28 via the processing gas supply tube 25 and the shower housing 51. to the chamber 2 'of, and by the pressure regulating valve to the chamber 2' is adjusted to a predetermined pressure in the vacuum. Next, high-frequency power is applied from the first high-frequency power source 58 to the high-frequency antenna 55, whereby an induced electric field is formed in the chamber 2 ' via the top wall 52 made of a dielectric. In this way, by the induced electric field generated, the processing gas is plasmaized in the chamber 2 ' to generate a high-density inductively coupled plasma, and the substrate G is plasma-etched. At this time, high frequency power for bias is applied to the substrate stage 4 (base material 5) from the second high frequency power source 14b via the matching unit 13b, and ions in the plasma are efficiently introduced to the substrate G by DC. The power source 15 applies a DC voltage to the adsorption electrode 6a, and the substrate G is adsorbed and fixed to the mounting surface of the substrate stage 4 (insulating member 6) by the Coulomb force via the plasma.
由於在藉由該感應耦合電漿進行蝕刻的情況 下，亦會在基板G的周邊部存在很多未反應的處理氣體，因此，當蝕刻對象膜為化學反應性較高的物質時，會因負載效果而導致基板G之周邊部的蝕刻速率變高。 Due to the etching performed by the inductively coupled plasma Further, since a large amount of unreacted processing gas is present in the peripheral portion of the substrate G, when the etching target film is a substance having high chemical reactivity, the etching rate of the peripheral portion of the substrate G is increased due to the load effect. .
因此，與第1實施形態相同，對基板G之周 邊部供給氫氣作為捕集電漿中的活性種(自由基)的捕集氣體。藉此，活性種(自由基)會在基板G的周邊部被捕集。因此，在蝕刻速率較高之基板G的周邊部中，活性種(自由基)的量會減少且蝕刻速率會下降，而蝕刻速率在基板G的面內會被均勻化。 Therefore, as in the first embodiment, the circumference of the substrate G is Hydrogen is supplied to the side as a trapping gas for trapping active species (free radicals) in the plasma. Thereby, the active species (radicals) are trapped in the peripheral portion of the substrate G. Therefore, in the peripheral portion of the substrate G having a high etching rate, the amount of active species (radicals) is reduced and the etching rate is lowered, and the etching rate is uniformized in the plane of the substrate G.
接下來，對實驗例進行說明。 Next, an experimental example will be described.
在此，如圖7所示，在對550×650mm之基板進行蝕刻的電容耦合型電漿蝕刻裝置中，在對應於基板載置台之短邊之遮蔽環的部份，設置用於在500mm的範圍吐出氫氣的氣體吐出噴嘴16，從形成於該氣體吐出噴嘴的複數個氣體吐出口，一面以預定流量供給氫氣一面藉由預定的處理氣體進行以下所示之膜的蝕刻處理。對從此時供給基板之氫氣的端部至基板中央之蝕刻速率的分布進行測定。 Here, as shown in FIG. 7, in a capacitive coupling type plasma etching apparatus for etching a substrate of 550 × 650 mm, a portion corresponding to the shadow ring of the short side of the substrate mounting table is provided for use at 500 mm. The gas discharge nozzle 16 that discharges the hydrogen gas is subjected to an etching process of the film shown below by a predetermined processing gas while supplying hydrogen gas at a predetermined flow rate from a plurality of gas discharge ports formed in the gas discharge nozzle. The distribution of the etching rate from the end of the hydrogen supplied to the substrate at this time to the center of the substrate was measured.
針對容易受到F自由基之影響的a-Si膜，根據以下來作為基本條件，使氫氣(H2氣體)以0、25、50sccm 變化而進行蝕刻。 The a-Si film which is easily affected by the F radical is etched by changing hydrogen gas (H 2 gas) at 0, 25, or 50 sccm as a basic condition as follows.
壓力：60mTorr Pressure: 60mTorr
電源功率：3000W Power supply: 3000W
偏壓功率：300W Bias power: 300W
處理氣體及流量：SF6 100sccm Process gas and flow rate: SF 6 100sccm
Ar 200sccm Ar 200sccm
在圖8中表示該a-Si膜之蝕刻時之蝕刻速率的分布。 The distribution of the etching rate at the time of etching of the a-Si film is shown in FIG.
如該圖所示，以不供給H2氣體之習知的手法進行蝕刻時，基板外周部之蝕刻速率會變得非常高而蝕刻速率之均勻性(偏差)為17.9%。對此，可知藉由對基板周邊部供給H2氣體，幾乎不會對朝中央部的蝕刻速率產生影響，並能夠僅控制基板外周部的蝕刻速率，而H2氣體的流量越增加則基板外周部的蝕刻速率會下降。且，H2氣體流量為25sccm時，蝕刻速率之均勻性(偏差)會會變得非常小為5.8%。H2氣體流量為50sccm時，基板外周部之蝕刻速率進一步下降，而均勻性(偏差)會變大為17.2%。可知能夠比基板中央部的蝕刻速率更低，且藉由H2流量控制蝕刻分布。 As shown in the figure, when etching is performed by a conventional method of not supplying H 2 gas, the etching rate of the outer peripheral portion of the substrate is extremely high, and the uniformity (deviation) of the etching rate is 17.9%. On the other hand, it is understood that the supply of the H 2 gas to the peripheral portion of the substrate hardly affects the etching rate toward the central portion, and it is possible to control only the etching rate of the outer peripheral portion of the substrate, and the flow rate of the H 2 gas increases as the outer periphery of the substrate increases. The etch rate of the part will decrease. Further, when the flow rate of the H 2 gas is 25 sccm, the uniformity (deviation) of the etching rate becomes very small at 5.8%. When the flow rate of the H 2 gas is 50 sccm, the etching rate of the outer peripheral portion of the substrate is further lowered, and the uniformity (deviation) is increased to 17.2%. It can be seen that the etching rate can be lower than the central portion of the substrate, and the etching distribution is controlled by the H 2 flow rate.
針對容易受到F自由基及O自由基之影響的SiNx膜，根據以下來作為基本條件，使氫氣(H2氣體)以0、25、50sccm變化而進行蝕刻。 The SiN x film which is susceptible to F radicals and O radicals is subjected to etching under the following conditions as a basic condition, and hydrogen gas (H 2 gas) is changed at 0, 25, and 50 sccm.
壓力：60mTorr Pressure: 60mTorr
電源功率：3000W Power supply: 3000W
偏壓功率：300W Bias power: 300W
處理氣體及流量：SF6 200sccm Processing gas and flow rate: SF 6 200sccm
O2 100sccm O 2 100sccm
在圖9中表示如此之SiNx膜之蝕刻時之蝕刻速率的分布。 The distribution of the etching rate at the time of etching of such a SiN x film is shown in FIG.
如該圖所示，以不供給H2氣體之習知的手法進行蝕刻時，基板外周部之蝕刻速率會變得非常高而蝕刻速率之均勻性(偏差)為15.8%。對此，可知藉由對基板周邊部供給H2氣體，幾乎不會對朝中央部的蝕刻速率產生影響，並能夠僅控制基板外周部的蝕刻速率，而H2氣體的流量越增加則基板外周部的蝕刻速率會下降。且，H2氣體流量為50sccm時，蝕刻速率之均勻性(偏差)會變得非常小為5.3%。即使H2氣體流量為25sccm但效果大，均勻性(偏差)為6.4%。 As shown in the figure, when etching is performed by a conventional method of not supplying H 2 gas, the etching rate of the outer peripheral portion of the substrate is extremely high, and the uniformity (deviation) of the etching rate is 15.8%. On the other hand, it is understood that the supply of the H 2 gas to the peripheral portion of the substrate hardly affects the etching rate toward the central portion, and it is possible to control only the etching rate of the outer peripheral portion of the substrate, and the flow rate of the H 2 gas increases as the outer periphery of the substrate increases. The etch rate of the part will decrease. Further, when the flow rate of the H 2 gas is 50 sccm, the uniformity (deviation) of the etching rate becomes very small to 5.3%. Even if the flow rate of the H 2 gas was 25 sccm, the effect was large and the uniformity (deviation) was 6.4%.
針對容易受到Cl自由基之影響的Al膜，根據以下來作為基本條件，使氫氣(H2氣體)以0、50、100sccm變化而進行蝕刻。 The Al film which is easily affected by the Cl radical is etched by changing hydrogen gas (H 2 gas) at 0, 50, and 100 sccm as follows.
壓力：20mTorr Pressure: 20mTorr
電源功率：1500W Power supply: 1500W
偏壓功率：50W Bias power: 50W
處理氣體及流量：BCl3 200sccm Processing gas and flow rate: BCl 3 200sccm
Cl2 300sccm Cl 2 300sccm
在圖10中表示如此之Al膜之蝕刻時之蝕刻速率的分布。 The distribution of the etching rate at the time of etching of such an Al film is shown in FIG.
如該圖所示，以不供給H2氣體之習知的手法進行蝕刻時，基板外周部之蝕刻速率會變得非常高而蝕刻速率之均勻性(偏差)為34.0%。對此，可知藉由對基板周邊部供給H2氣體，能夠控制基板外周部的蝕刻速率，而H2氣體的流量越增加則基板外周部的蝕刻速率會下降。且，H2氣體流量為100sccm時，蝕刻速率之均勻性(偏差)會大幅被改善為19.5%。即使H2氣體流量為50sccm，亦可得到均勻性(偏差)為28.8%的改善效果。雖然在容易受到負載之影響的Al膜中，大多使用整流壁，但藉由對基板周邊部供給作為捕集氣體的H2氣體，確認了即使不設置整流壁亦可改善均勻性。 As shown in the figure, when etching is performed by a conventional method in which H 2 gas is not supplied, the etching rate of the outer peripheral portion of the substrate is extremely high, and the uniformity (deviation) of the etching rate is 34.0%. On the other hand, it is understood that the etching rate of the outer peripheral portion of the substrate can be controlled by supplying H 2 gas to the peripheral portion of the substrate, and as the flow rate of the H 2 gas increases, the etching rate of the outer peripheral portion of the substrate decreases. Further, when the flow rate of the H 2 gas is 100 sccm, the uniformity (deviation) of the etching rate is greatly improved to 19.5%. Even if the flow rate of the H 2 gas is 50 sccm, an improvement effect of uniformity (deviation) of 28.8% can be obtained. In the Al film which is likely to be affected by the load, the rectifying wall is often used. However, by supplying the H 2 gas as the trapping gas to the peripheral portion of the substrate, it was confirmed that the uniformity can be improved without providing the rectifying wall.
接下來，由以上的結果，針對檢測相對於處理氣體流量之捕集氣體之供給量之合理範圍的結果進行說明。 Next, from the above results, a result of detecting a reasonable range of the supply amount of the trap gas with respect to the flow rate of the processing gas will be described.
上述結果係在基板的一邊設置吐出作為捕集氣體之H2氣體的氣體吐出噴嘴，從該噴嘴供給作為捕集氣體的H2氣體，來掌握捕集氣體對蝕刻速率的影響，實際上，所供給之處理氣體係從基板之中央部經由四個邊(全周長2400mm)被排出。因此，以下的檢測係採取將處理氣體量換算成供給捕集氣體的每個邊而計算出對處理氣體所相對需要之捕集氣體流量的手法。 The results based on the discharge side of the substrate is provided as a gas of H 2 gas trapped gas discharge nozzles, a nozzle from which gas is supplied as an H 2 gas is trapped, to ascertain the effect of the trapped gas etching rate, in fact, the The supplied process gas system was discharged from the central portion of the substrate via four sides (full circumference 2400 mm). Therefore, the following detection method is a method of calculating the flow rate of the trapped gas required for the processing gas by converting the amount of the processing gas into each side of the supply trap gas.
又，上述結果係考慮藉由使作為處理氣體中 的反應性較高之反應種(活性種)的F、Cl、O與被供給至基板周邊部之作為捕集氣體的H2氣體進行反應，形成無助於HF、HCl、H2O等蝕刻的化合物而從腔室排出，使基板周邊部的反應種減少。事實上，如圖11之上述a-Si膜蝕刻時之基板周邊部之電漿的發光頻譜所示，H2氣體的流量越增加，則波長為656.5nm之H的發光會增強，波長為704nm之F的發光會減弱。因此，以下之驗証結果係以該論點為前提。 In addition, it is considered that F, Cl, and O, which are reactive species (active species) having high reactivity in the processing gas, are reacted with H 2 gas as a trap gas supplied to the peripheral portion of the substrate. A compound which does not contribute to etching such as HF, HCl, or H 2 O is formed and discharged from the chamber to reduce the number of reaction species in the peripheral portion of the substrate. In fact, as shown in the illuminating spectrum of the plasma in the peripheral portion of the substrate during the etching of the a-Si film as shown in FIG. 11, as the flow rate of the H 2 gas increases, the luminescence of H having a wavelength of 656.5 nm is enhanced, and the wavelength is 704 nm. The luminescence of F will be weakened. Therefore, the following verification results are based on this argument.
在上述實驗例中，由於使用100sccm之SF6氣體來作為處理氣體，因此，藉由電漿全部解離後，則體積會變成 7倍，體積流量係其S會變成100sccm、F會變成600sccm。又，如上述，被供給至基板的處理氣體係經由4個邊被排氣，若設為基板全周2400mm，則基板之每個邊500mm之F的換算量為125sccm。另一方面，由於作為捕集氣體的H2氣體為25~50sccm，若該些全部解離，則體積會變成2倍，H會變成50~100sccm。換算成原子量的比率時，相對於F原子量，H原子量會落在40~80%的範圍。 In the above experimental example, since 100 sccm of SF 6 gas was used as the processing gas, the volume was changed to 7 times after the plasma was completely dissociated, and the volume flow rate was such that S became 100 sccm and F became 600 sccm. In addition, as described above, the processing gas system supplied to the substrate is exhausted through four sides, and when the total circumference of the substrate is 2400 mm, the amount of conversion of F of 500 mm on each side of the substrate is 125 sccm. On the other hand, since the H 2 gas as the trap gas is 25 to 50 sccm, if all of them are dissociated, the volume becomes twice and H becomes 50 to 100 sccm. When converted to the ratio of atomic weight, the amount of H atoms falls within the range of 40 to 80% with respect to the amount of F atoms.
在上述實驗例中，由於使用200sccm之SF6氣體、使用100sccm之O2氣體來作為處理氣體，因此，若該些藉由電漿全部解離後，S會變成200sccm、F會變成1200sccm、O會變成200sccm，而F及O的體積流量會變成1400sccm。因此，基板之每個邊500mm之活性種(自由基)的換算量會變成291.7sccm。另一方面，由於作為捕集氣體的H2氣體為25~50sccm，因此，若該些全部解離，H會變成50~100sccm。換算成原子量的比率時，相對於活性種(自由基)原子量，H原子量會落在17.1~34.3%的範圍。 In the above experimental example, since 200 sccm of SF 6 gas and 100 sccm of O 2 gas are used as the processing gas, if these are completely dissociated by the plasma, S becomes 200 sccm, F becomes 1200 sccm, and O will It becomes 200sccm, and the volume flow rate of F and O becomes 1400sccm. Therefore, the amount of active species (free radicals) of 500 mm on each side of the substrate becomes 291.7 sccm. On the other hand, since the H 2 gas as the trap gas is 25 to 50 sccm, if all of them are dissociated, H becomes 50 to 100 sccm. When converted to the atomic weight ratio, the amount of H atoms falls within the range of 17.1 to 34.3% with respect to the atomic weight of the active species (radicals).
在上述實驗例中，由於使用200sccm之BCl3氣體、使用300sccm之Cl2氣體來作為處理氣體，因此，該些藉由電漿全部解離後，則Cl的體積流量會變成1200sccm。 因此，基板之每個邊500mm之Cl的換算量會變成250sccm。另一方面，由於作為捕集氣體的H2氣體為50~100sccm，因此，若該些全部解離，H會變成100~200sccm。換算成原子量的比率時，相對於Cl原子量，H原子量會落在40~80%的範圍。 In the above experimental example, since 200 sccm of BCl 3 gas and 300 sccm of Cl 2 gas were used as the processing gas, the volume flow rate of Cl became 1200 sccm after all the plasma was dissociated. Therefore, the converted amount of Cl of 500 mm on each side of the substrate becomes 250 sccm. On the other hand, since the H 2 gas as the trap gas is 50 to 100 sccm, if all of them are dissociated, H becomes 100 to 200 sccm. When converted to the ratio of atomic weight, the amount of H atoms falls within the range of 40 to 80% with respect to the amount of Cl atoms.
在上述實驗例中，係將處理氣體量換算為供 給至基板每個邊的原子流量，而計算出相對所需的捕集氣體流量。實際上，因為捕集氣體供給區域是被設置於基板周圍，因此，所需之捕集氣體流量係能夠針對處理氣體投入量而相對地進行界定。 In the above experimental example, the amount of process gas is converted into The atomic flow rate to each side of the substrate is given and the relative trapped gas flow rate is calculated. In fact, since the trap gas supply region is disposed around the substrate, the required trapped gas flow rate can be relatively defined for the amount of process gas input.
由上述，確認了以相對於每單位時間供給之處理氣體中的F、Cl、O之原子量而使H原子量的比率落在17~80%之範圍，藉由供給作為捕集氣體的H2氣體控制基板周邊部之蝕刻速率是有效的。 From the above, it was confirmed that the ratio of the amount of H atoms falls within the range of 17 to 80% with respect to the atomic weight of F, Cl, and O in the processing gas supplied per unit time, by supplying the H 2 gas as the trap gas. It is effective to control the etching rate of the peripheral portion of the substrate.
接下來，藉由具有與圖1相同構成的電容耦合型電漿蝕刻裝置，對進行假想實際製程之實驗的結果進行說明。基板尺寸為730×920mm，捕集氣體被供給至基板周圍。 Next, a result of an experiment for performing a virtual actual process will be described by a capacitive coupling type plasma etching apparatus having the same configuration as that of FIG. The substrate size was 730 × 920 mm, and trapped gas was supplied to the periphery of the substrate.
在此，進行假想LTPS(低溫多晶矽)接觸性蝕刻的實驗。低溫多晶矽接觸性蝕刻，係對在如圖12所示之多晶矽(p-Si)膜101上層積SiO2膜102、SiNx膜103、SiO2膜104的層積構造進行蝕刻者，以往係在多晶矽層的蝕刻中會形成外周部之蝕刻速率較高的蝕刻分布， 而造成容易在基板外周部產生多晶矽膜腐蝕的問題。在此，在本實驗例中，係針對表示SiO2膜、SiNx膜、及與多晶矽膜同等之蝕刻特性的a-Si膜，在從噴頭一起供給H2氣體與其他氣體的情況及將H2氣體作為捕集氣體而供給至基板之周邊部的情況下，以以下所述之條件來進行蝕刻。 Here, an experiment of imaginary LTPS (low temperature polysilicon) contact etching was performed. The low-temperature polysilicon contact etching is performed by etching the laminated structure of the SiO 2 film 102, the SiN x film 103, and the SiO 2 film 104 on the polycrystalline germanium (p-Si) film 101 shown in FIG. In the etching of the polycrystalline germanium layer, an etching distribution having a high etching rate in the outer peripheral portion is formed, which causes a problem that polycrystalline germanium film corrosion is likely to occur in the outer peripheral portion of the substrate. Here, in the present experimental example, the case where the H 2 gas and the other gas are supplied from the head with respect to the a-Si film indicating the etching characteristics equivalent to the SiO 2 film, the SiN x film, and the poly germanium film, and the H When the gas is supplied to the peripheral portion of the substrate as a trap gas, the etching is performed under the conditions described below.
壓力：10mTorr Pressure: 10mTorr
電源功率：5000W Power supply: 5000W
偏壓功率：5000W Bias power: 5000W
處理氣體及流量(噴頭)：C4F8 60sccm Process gas and flow (nozzle): C 4 F 8 60sccm
Ar 100sccm Ar 100sccm
H2 100sccm、0sccm H 2 100sccm, 0sccm
捕集氣體(H2氣體)流量(基板周邊部)：0sccm、100sccm Flow rate of trapped gas (H 2 gas) (peripheral part of the substrate): 0 sccm, 100 sccm
另外，相對於作為該情況之活性種之F的原子量之作為捕集氣體之H的原子量之比率為41.7%。 Further, the ratio of the atomic weight of H as the trapping gas to the atomic weight of F as the active species in this case was 41.7%.
在圖13~15中表示該些膜之蝕刻時之蝕刻速率(蝕刻量)的分布。圖13、14係分別為SiO2膜及SiNx膜的結果，不管有沒有供給H2氣體至基板周邊部，蝕刻速率之面內均勻性皆良好。另一方面，圖15為a-Si膜的結果，在不供給H2氣體至基板周邊部的情況下，基板外 周部的蝕刻速率會上升而蝕刻速率的面內均勻性為44%，但藉由對基板周邊部供給H2氣體，均勻性會被大幅改善至10%。 The distribution of the etching rate (etching amount) at the time of etching of these films is shown in Figs. 13 and 14 are the results of the SiO 2 film and the SiN x film, respectively, and the in-plane uniformity of the etching rate is good regardless of whether or not the H 2 gas is supplied to the peripheral portion of the substrate. On the other hand, Fig. 15 shows the result of the a-Si film. When the H 2 gas is not supplied to the peripheral portion of the substrate, the etching rate of the outer peripheral portion of the substrate increases and the in-plane uniformity of the etching rate is 44%. By supplying H 2 gas to the peripheral portion of the substrate, the uniformity is greatly improved to 10%.
由上述，確認了藉由將作為捕集氣體之H2氣 體供給至基板周邊部，幾乎不會對SiO2膜或SiNx膜之蝕刻造成影響，而能夠改善僅化學反應性強且基板外周部之蝕刻速率較高的a-Si膜其蝕刻分布。因此，本手法係在LTPS(低溫多晶矽)接觸性蝕刻中，對於在基板外周部容易產生之多晶矽膜的腐蝕而言，可以說是一種非常有效的手法。 From the above, it was confirmed that the supply of the H 2 gas as the trap gas to the peripheral portion of the substrate hardly affects the etching of the SiO 2 film or the SiN x film, and it is possible to improve the chemical reactivity only and the outer peripheral portion of the substrate. The a-Si film having a higher etching rate has an etching distribution. Therefore, this method is a very effective method for the corrosion of the polysilicon film which is likely to occur in the outer peripheral portion of the substrate in the contact etching of LTPS (low temperature polysilicon).
接下來，如圖4所示除了在遮蔽環之側面設置供給作為捕集氣體之H2氣體的捕集氣體供給噴嘴之外，藉由具有與圖6相同構成的感應耦合型電漿蝕刻裝置來說明進行蝕刻的結果。基板尺寸係1850×1500mm。 Next, as shown in FIG. 4, an inductively coupled plasma etching apparatus having the same configuration as that of FIG. 6 is provided except that a trap gas supply nozzle for supplying H 2 gas as a trap gas is provided on the side of the shield ring. Explain the results of the etching. The substrate size is 1850 x 1500 mm.
在本實驗例中，亦進行假想LTPS(低溫多晶 矽)接觸性蝕刻的實驗。具體而言，使用C2HF5氣體、H2氣體、Ar氣體作為處理氣體，來檢測有無作為捕集氣體之H2氣體所造成之SiO2膜及Si膜的蝕刻分布。 In this experimental example, an experiment of imaginary LTPS (low temperature polysilicon) contact etching was also performed. Specifically, C 2 HF 5 gas, H 2 gas, and Ar gas are used as the processing gas to detect the presence or absence of an etching distribution of the SiO 2 film and the Si film caused by the H 2 gas as the trap gas.
在圖16中表示該結果。圖16係表示基板之 1/4之部份的蝕刻速率者，C為基板的中心，LC為長邊的中心，SC為短邊的中心，Edge為基板的角度。圖16(a)係將處理氣體設為C2HF5：300sccm、H2：180sccm、Ar ：240sccm，且不使用捕集氣體來進行蝕刻的結果。圖16(b)、(c)係不使用處理氣體中的H2：180sccm，從基板周邊部之捕集氣體吐出噴嘴流出的結果。另外，相對於圖16(b)、(c)情況之作為活性種之F的原子量之作為捕集氣體之H的原子量之比率為24%及72%。 This result is shown in FIG. Figure 16 shows the etch rate of a portion of the 1/4 of the substrate, C is the center of the substrate, LC is the center of the long side, SC is the center of the short side, and Edge is the angle of the substrate. Fig. 16 (a) shows the results of etching using a trapping gas without using a trap gas as C 2 HF 5 : 300 sccm, H 2 : 180 sccm, and Ar: 240 sccm. FIGS. 16(b) and 16(c) show the results of flowing out of the trapping gas discharge nozzle from the peripheral portion of the substrate without using H 2 : 180 sccm in the processing gas. Further, the ratio of the atomic weight of F which is the active species to the atomic weight of H as the active species in the case of FIGS. 16(b) and (c) is 24% and 72%.
如圖16(a)所示，在不供給作為捕集氣體之H2氣體至基板周邊部時，SiO2膜其蝕刻分布比較均勻，但在Si膜中，基板外周部之蝕刻速率會上升。另一方面，在將包含於圖16(a)之處理氣體的H2氣體作為捕集氣體而供給至基板周邊部的圖16(b)、(c)中，不會使SiO2膜的蝕刻分布紊亂且可改善Si膜的蝕刻分布。且，確認了其效果係相較於朝基板周邊部之H2氣體的流量為180sccm之(b)的情況，540sccm之(c)的情況較大。 As shown in Fig. 16 (a), when the H 2 gas as the trap gas is not supplied to the peripheral portion of the substrate, the etching distribution of the SiO 2 film is relatively uniform, but in the Si film, the etching rate of the outer peripheral portion of the substrate increases. On the other hand, in FIGS. 16(b) and (c) in which the H 2 gas contained in the processing gas of FIG. 16( a ) is supplied as a trap gas to the peripheral portion of the substrate, etching of the SiO 2 film is not performed. The distribution is disordered and the etching distribution of the Si film can be improved. Further, it was confirmed that the effect was larger than the case where (b) of the flow rate of the H 2 gas toward the peripheral portion of the substrate was 180 sccm, and the case of (c) of 540 sccm was large.
另外，在對包含化學性較高之蝕刻對象膜的層積膜等進行蝕刻時，亦能夠僅在控制基板外周部之蝕刻速率所需之膜的蝕刻步驟中，以供給捕集氣體的處理程式來進行蝕刻。 In addition, when etching a laminated film or the like containing a chemically-impermeable etching target film, it is also possible to supply a trapping gas to the processing step of the film only in the etching step of the film required to control the etching rate of the outer peripheral portion of the substrate. To etch.
另外，本發明係不限定於上述實施形態，可進行各種變形。例如，上述實施形態係以電漿蝕刻作為電漿處理為例來進行說明，但並不限於電漿蝕刻亦可為電漿CVD等其他電漿處理。 Further, the present invention is not limited to the above embodiment, and various modifications can be made. For example, although the above embodiment is described by taking plasma etching as a plasma treatment, it is not limited to plasma etching, and may be other plasma treatment such as plasma CVD.
又，在上述實施形態中，雖例示了電容耦合型及感應耦合電漿處理裝置，但並不限於此，只要能夠在 腔室內生成電漿，亦可為微波電漿等、以其他方式生成電漿的裝置。 Further, in the above embodiment, the capacitive coupling type and the inductively coupled plasma processing apparatus are exemplified, but the invention is not limited thereto, as long as A plasma is generated in the chamber, and may be a device such as microwave plasma that generates plasma in other manners.
且，並不限於以H2氣體作為捕集氣體，只要能夠與自由基等活性種反應而進行捕集者即可。蝕刻對象膜亦不限於上述實施形態者。 Further, the H 2 gas is not limited to the trap gas, and it is only required to be able to react with an active species such as a radical to collect the gas. The etching target film is not limited to the above embodiment.
又，在上述實施形態中雖對本發明適用於FPD用玻璃基板之例子進行了說明，但不限於此，當然也可適用於半導體基板等其他基板。 In the above embodiment, the present invention has been applied to an example of a glass substrate for FPD. However, the present invention is not limited thereto, and may be applied to other substrates such as a semiconductor substrate.
1‧‧‧電漿蝕刻裝置 1‧‧‧ plasma etching device
2‧‧‧腔室 2‧‧‧ chamber
3‧‧‧絕緣板 3‧‧‧Insulation board
4‧‧‧基板載置台 4‧‧‧Substrate mounting table
5‧‧‧基材 5‧‧‧Substrate
5a‧‧‧凸部 5a‧‧‧ convex
5b‧‧‧凸緣部 5b‧‧‧Flange
6‧‧‧絕緣構件 6‧‧‧Insulating components
6a‧‧‧吸附電極 6a‧‧‧Adsorption electrode
7‧‧‧遮蔽環 7‧‧‧ shadow ring
8‧‧‧絕緣環 8‧‧‧Insulation ring
12‧‧‧供電線 12‧‧‧Power supply line
13a‧‧‧匹配器 13a‧‧‧matcher
13b‧‧‧匹配器 13b‧‧‧matcher
14a‧‧‧第1高頻電源 14a‧‧‧1st high frequency power supply
14b‧‧‧第2高頻電源 14b‧‧‧2nd high frequency power supply
15‧‧‧直流電源 15‧‧‧DC power supply
16‧‧‧捕集氣體吐出噴嘴 16‧‧‧ Capture gas discharge nozzle
17‧‧‧氣體吐出口 17‧‧‧ gas discharge
18‧‧‧氣體流路 18‧‧‧ gas flow path
19‧‧‧捕集氣體供給源 19‧‧‧ Capture gas supply
20‧‧‧噴頭 20‧‧‧ sprinkler
21‧‧‧氣體擴散空間 21‧‧‧ gas diffusion space
22‧‧‧吐出孔 22‧‧‧Spit hole
24‧‧‧氣體導入口 24‧‧‧ gas inlet
25‧‧‧處理氣體供給管 25‧‧‧Processing gas supply pipe
26‧‧‧閥 26‧‧‧Valves
27‧‧‧質流控制器 27‧‧‧The mass flow controller
28‧‧‧處理氣體供給源 28‧‧‧Processing gas supply
29‧‧‧排氣管 29‧‧‧Exhaust pipe
30‧‧‧排氣裝置 30‧‧‧Exhaust device
31‧‧‧搬入搬出口 31‧‧‧ Move in and out
32‧‧‧閘閥 32‧‧‧ gate valve
40‧‧‧控制部 40‧‧‧Control Department
G‧‧‧基板 G‧‧‧Substrate
Claims (19)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012259050A JP6017936B2 (en) | 2012-11-27 | 2012-11-27 | Plasma processing apparatus and plasma processing method |
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| Publication Number | Publication Date |
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| TW201435963A TW201435963A (en) | 2014-09-16 |
| TWI608516B true TWI608516B (en) | 2017-12-11 |
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| TW102142271A TWI608516B (en) | 2012-11-27 | 2013-11-20 | Plasma processing apparatus, plasma processing method and memory media |
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| Country | Link |
|---|---|
| JP (1) | JP6017936B2 (en) |
| KR (2) | KR102011522B1 (en) |
| CN (1) | CN103839748B (en) |
| TW (1) | TWI608516B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101649947B1 (en) * | 2014-07-08 | 2016-08-23 | 피에스케이 주식회사 | Apparatus for generating plasma using dual plasma source and apparatus for treating substrate comprising the same |
| CN112530776B (en) * | 2019-09-18 | 2024-02-09 | 中微半导体设备(上海)股份有限公司 | Plasma processing device |
| CN111599717B (en) | 2020-05-09 | 2024-03-26 | 北京北方华创微电子装备有限公司 | Semiconductor reaction chamber and atomic layer plasma etching machine |
| KR102587571B1 (en) * | 2020-11-10 | 2023-10-10 | 세메스 주식회사 | Apparatus and method for treating surface of component |
Citations (7)
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|---|---|---|---|---|
| JPH10147893A (en) * | 1996-11-18 | 1998-06-02 | Speedfam Co Ltd | Plasma etching method and system therefor |
| US20010003271A1 (en) * | 1999-12-10 | 2001-06-14 | Tokyo Electron Limited | Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film |
| TW483103B (en) * | 1999-09-03 | 2002-04-11 | Applied Materials Inc | Cleaning contact with successive fluorine and hydrogen plasmas |
| JP2003243364A (en) * | 2002-02-15 | 2003-08-29 | Seiko Epson Corp | Rectifying wall, dry etching apparatus, and manufacturing method for electrooptical apparatus using the same |
| TW200414344A (en) * | 2002-09-06 | 2004-08-01 | Tokyo Electron Ltd | Method and apparatus for etching Si |
| US20050103442A1 (en) * | 2000-09-28 | 2005-05-19 | Chen Jian J. | Chamber configuration for confining a plasma |
| JP2008016479A (en) * | 2006-07-03 | 2008-01-24 | Philtech Inc | Manufacturing method of semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2625072B2 (en) * | 1992-09-08 | 1997-06-25 | アプライド マテリアルズ インコーポレイテッド | Plasma reactor using electromagnetic RF coupling and method thereof |
| JP2002045683A (en) * | 2000-08-08 | 2002-02-12 | Hitachi Kokusai Electric Inc | Substrate processing device |
| JP2006344701A (en) * | 2005-06-08 | 2006-12-21 | Matsushita Electric Ind Co Ltd | Etching device and etching method |
-
2012
- 2012-11-27 JP JP2012259050A patent/JP6017936B2/en active Active
-
2013
- 2013-11-18 KR KR1020130139543A patent/KR102011522B1/en active IP Right Grant
- 2013-11-20 TW TW102142271A patent/TWI608516B/en active
- 2013-11-27 CN CN201310616729.7A patent/CN103839748B/en active Active
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2017
- 2017-10-16 KR KR1020170133802A patent/KR20170118663A/en not_active Application Discontinuation
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10147893A (en) * | 1996-11-18 | 1998-06-02 | Speedfam Co Ltd | Plasma etching method and system therefor |
| TW483103B (en) * | 1999-09-03 | 2002-04-11 | Applied Materials Inc | Cleaning contact with successive fluorine and hydrogen plasmas |
| US20010003271A1 (en) * | 1999-12-10 | 2001-06-14 | Tokyo Electron Limited | Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film |
| US20050103442A1 (en) * | 2000-09-28 | 2005-05-19 | Chen Jian J. | Chamber configuration for confining a plasma |
| JP2003243364A (en) * | 2002-02-15 | 2003-08-29 | Seiko Epson Corp | Rectifying wall, dry etching apparatus, and manufacturing method for electrooptical apparatus using the same |
| TW200414344A (en) * | 2002-09-06 | 2004-08-01 | Tokyo Electron Ltd | Method and apparatus for etching Si |
| JP2008016479A (en) * | 2006-07-03 | 2008-01-24 | Philtech Inc | Manufacturing method of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140067905A (en) | 2014-06-05 |
| CN103839748B (en) | 2017-04-05 |
| KR20170118663A (en) | 2017-10-25 |
| KR102011522B1 (en) | 2019-08-16 |
| CN103839748A (en) | 2014-06-04 |
| JP2014107405A (en) | 2014-06-09 |
| JP6017936B2 (en) | 2016-11-02 |
| TW201435963A (en) | 2014-09-16 |
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