CN103839748B - Plasma processing apparatus and method of plasma processing - Google Patents
Plasma processing apparatus and method of plasma processing Download PDFInfo
- Publication number
- CN103839748B CN103839748B CN201310616729.7A CN201310616729A CN103839748B CN 103839748 B CN103839748 B CN 103839748B CN 201310616729 A CN201310616729 A CN 201310616729A CN 103839748 B CN103839748 B CN 103839748B
- Authority
- CN
- China
- Prior art keywords
- gas
- substrate
- plasma
- capture
- spike
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012545 processing Methods 0.000 title claims abstract description 127
- 238000000034 method Methods 0.000 title claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 152
- 230000008569 process Effects 0.000 claims abstract description 56
- 238000003851 corona treatment Methods 0.000 claims abstract description 25
- 230000007246 mechanism Effects 0.000 claims abstract description 14
- 239000007789 gas Substances 0.000 claims description 274
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 26
- 229910052739 hydrogen Inorganic materials 0.000 claims description 26
- 239000001257 hydrogen Substances 0.000 claims description 26
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- 239000007921 spray Substances 0.000 claims description 8
- 238000003672 processing method Methods 0.000 claims description 2
- 150000003254 radicals Chemical class 0.000 abstract description 29
- 230000009257 reactivity Effects 0.000 abstract description 11
- 238000005530 etching Methods 0.000 description 35
- 238000001020 plasma etching Methods 0.000 description 32
- 230000002093 peripheral effect Effects 0.000 description 18
- 239000000463 material Substances 0.000 description 13
- 229910004205 SiNX Inorganic materials 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 238000003860 storage Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000033228 biological regulation Effects 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- OUUQCZGPVNCOIJ-UHFFFAOYSA-N hydroperoxyl Chemical compound O[O] OUUQCZGPVNCOIJ-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
Abstract
The present invention provides the sacrifice part that can not be used more than rectification wall or free radical consumption, and makes the reactivity of the periphery of processed substrate reduce carrying out the plasma processing apparatus of uniform corona treatment.The plasma processing apparatus of the present invention possess：For housing substrate（G）, to the substrate（G）Implement the process container of corona treatment（2）；In process container（2）Interior mounting substrate（G）Substrate-placing platform（4）；To the processing gas feed mechanism for supplying processing gas in process container（20、28）；To process container（2）The exhaust gear being inside exhausted（30）；As in process container（2）The high frequency electric source of the plasma source of the interior plasma for generating processing gas（14a）；With to substrate-placing platform（4）On substrate（G）Periphery supply capture gas capture gas supply mechanism（16、19）, the spike in the capture gas entrapment plasma.
Description
Technical field
The present invention relates to carry out the plasma processing apparatus and plasma of the corona treatment of plasma etching etc.
Body processing method.
Background technology
In flat faced display（FPD）In the manufacture process of semiconductor device, processed substrate is used mostly by etching, is splashed
Penetrate, CVD（Chemical vapor deposition）Deng corona treatment.
For example in the case where plasma etching being carried out as corona treatment, make processing gas using plasma
Dissociative activation, makes the free radical isoreactivity kind and etch target film reaction of generation.
In the case where etch target film is the high film of chemical reactivity, due to load（loading）Impact, can see
To the trend that the etch-rate of the periphery of processed substrate is uprised, this can restrict the uniformity of etching mostly.
As the technology of the trend uprised in circumference etch-rate as suppressing, it is known to surround processed substrate
Mode configure rectification wall as vertical side wall to suppress the technology of the flowing of the processing gas of processed substrate outer edge
（Such as patent documentation 1）.In addition, also it can be considered that as described in patent documentation 2 by the part more than free radical consumption
As sacrificing the method that part is configured in the exterior lateral area of processed substrate to reduce the impact for loading.
Prior art literature
Patent documentation
Patent documentation 1：Japanese Unexamined Patent Publication 2003-243364 publications
Patent documentation 2：Japanese Unexamined Patent Publication 5-190502 publication
The content of the invention
The technical problem for solving is wanted in invention
But, in the case of using rectification wall, need species, the etching condition according to etch target film（Scheme）Make whole
Stream wall optimization is very miscellaneous.In addition, in the case of using the sacrifice part more than free radical consumption, because it is to consume to sacrifice part
Product, so needing periodic replacement, need to spend time and the cost changed.In addition, two kinds of technologies, continuously to multiple etching layers
Other etch target films can all be impacted by situation about being processed etc., produce technologic unfavorable condition.
The present invention is made in view of the foregoing, and its technical problem to be solved is to provide and can not use rectification wall
Or the sacrifice part more than free radical consumption, and the reactivity of the periphery of processed substrate is reduced to carry out uniform plasma
The plasma processing apparatus and method of plasma processing of body process.
For solving the technical scheme of technical problem
In order to solve above-mentioned technical problem, in a first aspect of the present invention, there is provided a kind of plasma processing apparatus, its
It is the plasma processing apparatus for implementing corona treatment to substrate, it is characterised in that possess：For housing substrate, to this
Substrate implements the process container of corona treatment；The substrate-placing platform of substrate is loaded in above-mentioned process container；To above-mentioned place
The processing gas feed mechanism of supply processing gas in reason container；To the exhaust gear being exhausted in above-mentioned process container；
The plasma signal generating unit of the plasma of above-mentioned processing gas is generated in above-mentioned process container；With to above-mentioned substrate-placing platform
On substrate periphery supply capture gas capture gas supply mechanism, in the above-mentioned plasma of capture gas entrapment
Spike.
In a second aspect of the present invention, there is provided a kind of corona treatment for implementing corona treatment to substrate
Method, it is characterised in that：In the state of the substrate-placing platform in process container is placed with substrate, at supply in process container
Process gases, the plasma that processing gas are generated in above-mentioned process container carry out corona treatment to substrate, now, to base
The capture gas of the spike in the above-mentioned plasma of periphery supply capture of plate.
In above-mentioned first aspect and second aspect, above-mentioned corona treatment can be plasma etch process.Separately
Outward, at least one gas during above-mentioned processing gas are comprising F, Cl and O, above-mentioned capture gas are hydrogen.In addition, above-mentioned catch
The atomic number for obtaining gas is 17～80% to the ratio of the atomic number of the spike in above-mentioned processing gas.
In the case where above-mentioned corona treatment is plasma etch process, etch target can be the shape on substrate
Into Si films, SiNxAny one of film and Al films.Etch target be Si films in the case of, it is possible to use F as spike,
The atomic number of above-mentioned capture gas can be 40～80% to the ratio of the atomic number of the spike in above-mentioned processing gas.In erosion
Quarter object be SiNxIn the case of film, it is possible to use, used as spike, the atomic number of above-mentioned capture gas is to above-mentioned process for F and O
The ratio of the atomic number of the spike in gas can be 17.1～34.3%.In the case where etch target is Al films, can make
With Cl as spike, the atomic number of above-mentioned capture gas can be with to the ratio of the atomic number of the spike in above-mentioned processing gas
For 40～80%.
In above-mentioned first aspect, above-mentioned capture gas supply mechanism can be arranged at the substrate of aforesaid substrate mounting table
Around.In addition, above-mentioned processing gas feed mechanism can with above-mentioned process container to the base in aforesaid substrate mounting table
Plate supplies the shower nozzle of processing gas with shape spray, and above-mentioned capture gas supply mechanism can be arranged on around above-mentioned shower nozzle.
In a third aspect of the present invention, there is provided a kind of storage medium, its be stored with computers operation, for controlling
The program of plasma processing apparatus, it is characterised in that：Said procedure upon execution, is made at the above-mentioned plasma of computer controls
Reason device so that carry out the method for plasma processing of above-mentioned second aspect.
Invention effect
According to the present invention, in corona treatment, to the substrate on substrate-placing platform periphery supply capture etc. from
The capture gas of the spike in daughter.Therefore, in the case of big in the peripheral part corona treatment speed of substrate, can
Reduce the processing speed of the part, improve can the uniformity of corona treatment distribution.
Description of the drawings
Fig. 1 is the plasma-etching apparatus of the plasma processing apparatus of the first embodiment for being denoted as the present invention
Sectional view.
Fig. 2 be partly represent Fig. 1 plasma-etching apparatus in substrate-placing platform sectional view.
Fig. 3 is the plane graph of the substrate-placing platform in the plasma-etching apparatus for represent Fig. 1.
Fig. 4 is the sectional view of another example for representing capture gas jetting nozzle.
Fig. 5 is the sectional view of another example for representing capture gas jetting nozzle.
Fig. 6 is the plasma-etching apparatus of the plasma processing apparatus for being denoted as second embodiment of the present invention
Sectional view.
Fig. 7 is the schematic diagram for illustrating to experimental example 1.
Fig. 8 is to represent the H as capture gas carried out to Si film in the case of plasma etching2Gas to base
The figure of the quantity delivered of plate periphery and the relation of etch profile.
Fig. 9 is represented to SiNxFilm carries out the H as capture gas in the case of plasma etching2Gas to base
The figure of the quantity delivered of plate periphery and the relation of etch profile.
Figure 10 is to represent the H as capture gas carried out to Al films in the case of plasma etching2Gas to base
The figure of the quantity delivered of plate periphery and the relation of etch profile.
The H to the supply of substrate periphery portion when Figure 11 is the etching for representing Si film2The amount of gas is sent out with plasma
The figure of the relation of light spectrum.
Figure 12 is the sectional view of the laminated construction of etch target when representing imaginary LTPS contacts etching in experimental example 2.
Figure 13 be represent in experimental example 2 by the H as capture gas2The SiO that the presence or absence of supply of gas causes2Film
The figure of etch profile.
Figure 14 be represent in experimental example 2 by the H as capture gas2The SiN that the presence or absence of supply of gas causesxFilm
The figure of etch profile.
Figure 15 be represent in experimental example 2 by the H as capture gas2The Si film that the presence or absence of supply of gas causes
The figure of etch profile.
Figure 16 is the figure of the result for representing experimental example 3.
Description of reference numerals
1、1′：Plasma-etching apparatus（Plasma processing apparatus）
2、2′：Chamber（Process container）
4：Substrate-placing platform
5：Base material
6：Insulating element
7：Shading ring
14a、58：First high frequency electric source
14b：Second high frequency electric source
16：Capture gas jetting nozzle
17：Gas vent
18：Gas flow path
19：Capture gas supply source
20：Shower nozzle
25：Processing gas supply pipe
28：Processing gas supply source
29：Exhaustor
30：Exhaust apparatus
31：Carrying-in/carrying-out mouth
40：Control unit
55：High frequency antenna
G：Substrate
Specific embodiment
Hereinafter, referring to the drawings embodiments of the present invention are illustrated.
In the present invention, as an example of plasma processing apparatus, plasma Etaching device is illustrated.
＜ first embodiments ＞
First, first embodiment is illustrated.
Fig. 1 is the plasma-etching apparatus of the plasma processing apparatus of the first embodiment for being denoted as the present invention
Sectional view, Fig. 2 be partly represent Fig. 1 plasma-etching apparatus in substrate-placing platform sectional view, Fig. 3 is to represent
The plane graph of the substrate-placing platform in the plasma-etching apparatus of Fig. 1.
As shown in figure 1, the plasma-etching apparatus 1 are configured to the glass substrate to FPD（Hereinafter, it is abbreviated as " base
Plate "）The capacitive coupling plasma Etaching device that G is etched.Illustrating as FPD has liquid crystal display（LCD）, electroluminescent
Light（Electro Luminescence；EL）Display, plasma display（PDP）Deng.Plasma-etching apparatus 1 have
The standby chamber 2 as process container, the chamber 2 house the substrate G as processed substrate.Chamber 2 is for example carried out by surface
Pellumina process（Anodized）Aluminum formed, be correspondingly formed as corner barrel shape with the shape of substrate G.
Bottom in chamber 2 is provided with what is worked as lower electrode across the insulation board 3 formed by insulant
Substrate-placing platform 4.Substrate-placing platform 4 is formed by metal, such as aluminum, is possessed：The base material 5 formed by metal, such as aluminum, the base material
5 have the flange part 5b around the convex portion 5a and convex portion 5a of the central part for being formed in top；Be arranged on it is on the 5a of convex portion, tool
There is the insulating element 6 of the mounting surface of substrate G.Plane adsorption electrode 6a is internally provided with insulating element 6, by these structures
Into for the electrostatic chuck of Electrostatic Absorption is carried out to substrate G.On flange part 5b, the mode that the substrate G of mounting is surrounded is set
It is equipped with the shading ring 7 formed by the insulator of frame-shaped.In addition, dead ring 8 is provided with the way of surrounding around by base material 5.
Insulating element 6, shading ring 7, such as insulating ceramicses as aluminium oxide of dead ring 8 are constituted.
Base material 5 is connected with the supply lines 12 for supply high frequency electric power, 12 branch of supply lines, a branch line with match
Device 13a and plasma are generated（Source）First high frequency electric source 14a connections, another branch line and adapter 13b and bias
The the second high frequency electric source 14b connections for applying.Apply plasma to generate for example from the first high frequency electric source 14a to base material 5
The RF power of 13.56MHz, thus, substrate-placing platform 4 works as lower electrode.In addition, from the second high frequency electric source 14b
The RF power of such as 3.2MHz being biased to base material 5, thereby, it is possible to the ion in plasma is effectively introduced into
Substrate G.Furthermore, it is possible to arrange a high frequency electric source for being used for that plasma is generated and biases applying.Adsorption electrode 6a with it is straight
Stream power supply 15 connects, and applies DC voltage to adsorption electrode 6a, and substrate G is adsorbed the mounting in insulating element 6 using Coulomb force
On face.
In the upper surface of shading ring 7, in its complete cycle in the way of the mounting surface by substrate G is surrounded, it is provided with the shape of a frame
Capture gas jetting nozzle 16, the capture gas jetting nozzle 16 are sprayed as capturing the spike in plasma（From
By base）Capture gas hydrogen（H2Gas）.It is formed with throughout complete cycle in the upper surface of capture gas jetting nozzle 16 multiple
Gas vent 17.Capture gas jetting nozzle 16 is connected with gas flow path 18, the other end and the supply conduct of gas flow path 18
The capture gas supply source 19 of the hydrogen of capture gas connects.As the hydrogen of capture gas, lead to from capture gas supply source 19
Cross gas flow path 18 and reach capture gas jetting nozzle 16, spray from multiple gas vents 17, be supplied to substrate-placing platform 4
On substrate G periphery.
In substrate-placing platform 4, relative to the upper surface of substrate-placing platform 4（That is the upper surface of insulating element 6）Can dash forward
It is provided with going out and submerge for carrying out multiple lifter pins of the handing-over of substrate G（It is not shown）, the handing-over of substrate G is relative to from base
The upper surface of plate mounting table 4 is projected into the lifter pin of the state of top and carries out.
On the top of chamber 2, arranged in the way of relative with substrate-placing platform 4 in oriented chamber 2 supply processing gas and
And as the shower nozzle 20 that upper electrode works.Shower nozzle 20 is internally formed with the gas diffusion space for spreading processing gas
21st, and in lower surface or the opposite face relative with substrate-placing platform 4 the multiple squit holes 22 for spraying processing gas are formed with.Should
Shower nozzle 20 is grounded, and a pair of parallel plate electrode is constituted together with substrate-placing platform 4.
The upper surface of shower nozzle 20 is provided with gas introduction port 24, the gas introduction port 24 is connected with processing gas supply pipe 25
Connect, the processing gas supply pipe 25 is connected with processing gas supply source 28.Valve 26 is provided with processing gas supply pipe 25
With mass flow controller 27.The processing gas for etching are supplied from processing gas supply source 28.As processing gas, can
Using the processing gas being usually used in the field, optimal material can be used according to the film for being processed.As such
Processing gas, are typically capable of using comprising at least one gas in F, Cl and O.These are formed respectively comprising reactive high
F, Cl, O spike（Free radical）.
Exhaustor 29 is connected with 4 angles of the diapire of chamber 2（2 are illustrated only）, the exhaustor 29 and exhaust apparatus 30
Connection, is provided with pressure-regulating valve (not shown) on the exhaustor 29.Exhaust apparatus 30 possesses the vacuum pumps such as turbomolecular pump,
Thus, it is configured to, to being exhausted in chamber 2, be evacuated to the reduced atmosphere of regulation.In the side wall of chamber 2, shape
Into the carrying-in/carrying-out mouth 31 having for carrying-in/carrying-out substrate G, and be provided with open and close the carrying-in/carrying-out mouth 31 gate valve
32, it is configured to when carrying-in/carrying-out mouth 31 is opened, using transport unit (not shown) by substrate G to carrying-in/carrying-out inside and outside chamber 2.
In addition, plasma-etching apparatus 1 possess control unit 40, the control unit 40 has processing controller, the process control
Utensil processed is ready for use on the microprocessor of each constituting portion of control plasma-etching apparatus 1（Computer）.Control unit 40 also has：
User interface, the user interface include by operator carry out for managing plasma Etaching device 1 order be input into etc. input
The keyboard of operation and the display of operational situation visualization display by plasma-etching apparatus 1 etc.；And storage part, this is deposited
Storage portion is stored with the control of the various process for being performed by plasma-etching apparatus 1 by the control realization of processing controller
Program and the program i.e. processing scheme for processing each constituting portion execution of plasma processing apparatus according to treatment conditions.
Processing scheme is stored in the storage medium in storage part.Storage medium can be the hard disk or quasiconductor being built in computer
Memorizer, or the moveable storage medium such as CDROM, DVD, flash memory.Alternatively, it is also possible to cause to pass through from other devices
The appropriate transfer scheme of such as special circuit.Furthermore, it is possible to as needed, adjusted from storage part using instruction from user interface etc.
Going out arbitrary processing scheme performs processing controller, thus, under the control of processing controller, in plasma-etching apparatus
In carry out desired process.
Then, the process action in the plasma-etching apparatus 1 of said structure is illustrated.Following process action
Carry out under the control of control unit 40.
First, gate valve 32 is opened to being exhausted the pressure for becoming regulation in chamber 2 using exhaust apparatus 30,
Using transport unit（It is not shown）By carrying-in/carrying-out mouth 31 from the adjacent carrying room for being retained as vacuum（It is not shown）Move into
Substrate G, in the state of lifter pin (not shown) is increased receives substrate G thereon, is declined by making lifter pin, make substrate G
It is placed on substrate-placing platform 4.After transport unit is kept out of the way from chamber 2, gate valve 32 is closed.
In this condition, pass through processing gas supply pipe 25 from processing gas supply source 28 and shower nozzle 20 is supplied into chamber 2
Pressure in chamber 2 is adjusted to the vacuum of regulation to processing gas and using pressure-regulating valve.
From the first high frequency electric source 14a by adapter 13a to substrate-placing platform 4（Base material 5）Apply plasma and generate use
RF power, produce high-frequency electric field between the substrate-placing platform 4 as lower electrode and the shower nozzle 20 as upper electrode
Make the processing gas in chamber 2 plasmarized.In addition, from the second high frequency electric source 14b by adapter 13b to substrate-placing platform
4（Base material 5）Apply the RF power of biasing, the ion in plasma is effectively introduced into into substrate G.Now, by from straight
Stream power supply 15 applies DC voltage to adsorption electrode 6a, substrate G is absorbed and fixed at substrate using Coulomb force by plasma
Mounting table 4（Insulating element 6）Mounting surface on.
Thus, carry out the plasma etch process of the film of regulation to substrate G.Now, as processing gas, can be with root
Optimal material is used according to the film for being processed, for example, can use using plasma generate comprising the high F of reactivity, Cl,
The spike of O（Free radical）, comprising F, Cl and O at least one gas.
In plasma etch process, there are many unreacted processing gas in the periphery of substrate G, therefore, when
When etch target film is chemical reactivity high film, due to load effect, the etch-rate of the periphery of substrate G is uprised.
Therefore, in the present embodiment, from capture gas supply source 19 by gas flow path 18 from being arranged at capture gas
Multiple gas vents 17 of jetting nozzle 16 supply hydrogen as the spike in capture plasma to the periphery of substrate G
（Free radical）Capture gas.Thus, in the periphery of substrate G, spike（Free radical）It is captured.Specifically, exist
Spike comprising reactivity high F, Cl, O（Free radical）In the case of, they are reacted into hydrogen in the periphery of substrate G
For HF, HCl, H2O is such not to have contributive composition to etching, is discharged from chamber 2.Therefore, in the substrate G that etch-rate is high
Periphery, spike（Free radical）Amount reduce, etch-rate declines, and etch-rate is homogenized in the face of substrate G.
So, using the spike comprising reactivity high F, Cl, O（Free radical）When, by the periphery to substrate G
Supply hydrogen can capture these spikes as capture gas（Free radical）But, even other hydrogen such as hydroperoxyl radical
Source, it is also possible to work as capture gas.As long as in addition, can be with spike（Free radical）Reaction is generated does not have tribute to etching
The composition offered, it is also possible to using the capture gas beyond hydrogen.
The flow of capture gas is more, captures spike（Free radical）Effect it is higher, therefore, by control capture gas
Flow, the distributed controll of the etch-rate of substrate G can be carried out.In such a situation it is preferred that the flow of capture gas is capture
The atomic weight of gas relative to spike atomic weight be 17～80% flow.
As specific example, in etching method for amorphous silicon（a-Si）During film, SF can be preferably used as processing gas6Gas,
Using hydrogen（H2）In the case that gas is as capture gas, preferably using H atom amount relative to as spike（Free radical）F it is former
Son amount supplies hydrogen for 40～80% flow.In addition, in etching SiNxDuring film, as reaction kind, SF can be preferably used6Gas
And oxygen（O2）The mixed gas of gas, are using hydrogen（H2）In the case that gas is as capture gas, preferably with H atom amount relative to work
For spike（Free radical）F, O atomic weight be 17.1～34.3% flow supply hydrogen.In addition, when Al films are etched, energy
BCl is preferably used enough3、Cl2, using hydrogen（H2）Gas as capture gas in the case of, preferably using H atom amount relative to as
Spike（Free radical）Cl atomic weighies be 40～80% flow supply hydrogen.
After process terminates, the first high frequency electric source 14a and the second high frequency electric source 14b is closed, and stopped to absorption electricity
Pole 6a powers and releases Electrostatic Absorption, using lifter pin（It is not shown）Substrate G is risen, gate valve 32 is opened, after process
Substrate G is taken out of from carrying-in/carrying-out mouth 31.
In the present embodiment, to the periphery supply capture spike of substrate G（Free radical）Capture gas, make substrate
The spike of the periphery of G（Free radical）Amount reduce, therefore, it is possible to make the periphery of substrate G etch-rate reduce to enter
The high plasma etching of row inner evenness.In such manner, it is possible to not use rectification wall or sacrifice part, and make the periphery of substrate G
Etch-rate reduce, therefore, it is possible to eliminate：Species and the erosion according to etch target film is needed in the case of using rectification wall
Quarter condition（Scheme）Make the optimized problem of rectification wall；Using sacrifice part in the case of spent due to periodic replacement the time and
The problem of cost；Become in this two side problem, in situation about continuously being processed to multiple etching layers etc. to other erosions
Carve the problem that object film is impacted.
As the supply mode of the hydrogen of capture gas, as long as supplying to the periphery of substrate G, however it is not limited to the side of Fig. 1
Formula.For example, can be with as shown in figure 4, capture gas jetting nozzle 16 be arranged on the side of shading ring 7, alternatively, it is also possible to such as figure
Shown in 5, capture gas jetting nozzle 16 is arranged on into the peripheral part of shower nozzle 20, is supplied from the periphery of the upper direction substrate G of substrate G
To hydrogen.
＜ second embodiments ＞
Then, second embodiment of the present invention is illustrated.
Fig. 6 is the plasma-etching apparatus of the plasma processing apparatus for being denoted as second embodiment of the present invention
Sectional view.
As shown in fig. 6, the plasma-etching apparatus 1 ' are configured to inductive type plasma-etching apparatus.In Fig. 6
In, for the part mark identical symbol common with Fig. 1, simplify explanation.
The chamber 2 ' of the plasma-etching apparatus 1 ', roof 52 is by such as Al2O3In ceramics or the such electrolyte of quartz
Formed, the lower portion of roof 52 be embedded with processing gas supply in it is criss-cross spray framework 51, in addition, with
Chamber 2 is similarly constituted.
Spray framework 51 has carried out the aluminum of anodized and has constituted by conductive material, for example.In the spray framework 51
In be formed with horizontally extending gas flow path 53, the gas flow path 53 is connected with the multiple gas squit holes 54 for extending downwards
It is logical.On the other hand, the upper face center in roof 52 is provided with gas introduction port 24, same with the device of Fig. 1, gas introduction port
24 are connected with processing gas supply pipe 25, and the processing gas supply pipe 25 is connected with processing gas supply source 28.
Upper surface along roof 52 is provided with high frequency（RF）Antenna 55, high frequency antenna 55 are connected with supply lines 56, the confession
Electric wire 56 is generated with adapter 57 and plasma（Source）First high frequency electric source 58 connects.By from the first high frequency electric source 58
RF power of such as frequency for 13.56MHz is supplied to high frequency antenna 55, in 2 ' interior formation induction field of chamber, using the sense
Electric field is answered to make the processing gas from the spray ejection of framework 51 plasmarized.
On the other hand, the base material 5 of substrate-placing platform 4 is connected with supply lines 12, the supply lines 12 only with adapter 13b and partially
The second high frequency electric source 14b connections that pressure applies.
In such plasma-etching apparatus 1 ', substrate G is positioned in into substrate load in the same manner as first embodiment
Put on platform 4, processed to 2 ' interior supply of chamber by processing gas supply pipe 25 and spray framework 51 from processing gas supply source 28
Gas, and chamber 2 ' interior pressure is adjusted to the vacuum of regulation using pressure-regulating valve.Then, from the first high frequency electric source
58 apply RF power to high frequency antenna 55, form faradism chamber 2 ' is interior from there through the roof 52 by dielectric formation
.Using such induction field for being formed, make processing gas plasmarized chamber 2 ' is interior, generate highdensity inductive
Plasma, carries out plasma etch process to substrate G.Now, pass through adapter 13b to base from the second high frequency electric source 14b
Plate mounting table 4（Base material 5）Ion in plasma is effectively introduced into substrate G by the RF power being biased, by from
DC source 15 applies DC voltage to adsorption electrode 6a, and substrate G is absorbed and fixed at substrate using Coulomb force by plasma
Mounting table 4（Insulating element 6）Mounting surface on.
In the case where such utilization inductively coupled plasma is etched, there is also very in the periphery of substrate G
More unreacted processing gas, therefore, when etch target film is the high film of chemical reactivity, due to load effect, substrate G's
The etch-rate of periphery is uprised.
Therefore, it is same with first embodiment, to the periphery supply hydrogen of substrate G, as in capture plasma
Spike（Free radical）Capture gas.Thus, in the periphery of substrate G, spike（Free radical）It is captured.Therefore, in erosion
The periphery of the high substrate G of etching speed, spike（Free radical）Amount reduce, etch-rate is reduced, and is etched in the face of substrate G
Speed is homogenized.
＜ experimental example ＞
Then, experimental example is illustrated.
（Experimental example 1）
Here, as shown in fig. 7, the capacitive coupling plasma etching dress being etched in the substrate to 550 × 650mm
In putting, in the part corresponding with shading ring of the minor face of substrate-placing platform, it is provided for spraying the gas of hydrogen in the scope of 500mm
Body jetting nozzle 16, from the multiple gas vents for being formed at the gas jetting nozzle, with the flow supply hydrogen for specifying, while
The etch processes of film shown below are carried out using the processing gas of regulation.Determine the end of the supply hydrogen from substrate now
To the distribution of the etch-rate of substrate center.
Si film is etched
For the Si film for easily being affected by F free radicals, make primary condition as follows, make hydrogen（H2Gas）Flow with
0th, 25,50sccm changes are etched.
Primary condition
Pressure：60mTorr
Source power：3000W
Substrate bias power：300W
Processing gas and flow：
SF6 100sccm
Ar 200sccm
The distribution of the etch-rate during etching of such Si film is shown in into Fig. 8.
As shown in the drawing, H is not supplied in utilization2In the case that the conventional method of gas is etched, substrate peripheral part
Etch-rate it is very high, the uniformity of etch-rate（Deviation）For 17.9%.On the other hand, it can be seen that：By to substrate periphery
Portion supplies H2Gas, can have little to no effect to the etch-rate of central part, and the only etch-rate of control base board peripheral part,
H2The flow of gas more increases, and the etch-rate of substrate peripheral part is more reduced.Work as H2When gas flow is 25sccm, etch-rate
Uniformity（Deviation）It is very little, it is 5.8%.Work as H2When gas flow becomes 50sccm, the etch-rate of substrate peripheral part enters one
Step is reduced, uniformity（Deviation）Become greatly to 17.2%.Understand：The etch-rate in substrate center portion can be made further to reduce, can
Using H2Flow-control etch profile.
·SiNxFilm is etched
For the SiN for easily being affected by F free radicals and O free radicalsxFilm, makes primary condition as follows, makes hydrogen（H2Gas
Body）Flow is etched with 0,25,50sccm changes.
Primary condition
Pressure：60mTorr
Source power：3000W
Substrate bias power：300W
Processing gas and flow：
SF6 200sccm
O2 100sccm
By such SiNxThe distribution of the etch-rate during etching of film is shown in Fig. 9.
As shown in the drawing, H is not supplied in utilization2In the case that the conventional method of gas is etched, substrate peripheral part
Etch-rate it is very high, the uniformity of etch-rate（Deviation）For 15.8%.On the other hand, it can be seen that：By to substrate periphery
Portion supplies H2Gas, can have little to no effect to the etch-rate of central part, and the only etch-rate of control base board peripheral part,
H2The flow of gas more increases, and the etch-rate of substrate peripheral part is more reduced.In H2When gas flow is 50sccm, etch-rate
Uniformity（Deviation）It is very little, it is 5.3%.H2When gas flow is 25sccm, effect is also very big, uniformity（Deviation）For
6.4%。
Al films are etched
For the Al films for easily being affected by Cl free radicals, make primary condition as follows, make hydrogen（H2Gas）Flow with
0th, 50,100sccm changes are etched.
Primary condition
Pressure：20mTorr
Source power：1500W
Substrate bias power：50W
Processing gas and flow：
BCl3 200sccm
Cl2 300sccm
The distribution of the etch-rate during etching of such Al films is shown in into Figure 10.
As shown in the drawing, H is not supplied in utilization2In the case that the conventional method of gas is etched, substrate peripheral part
Etch-rate it is very high, the uniformity of etch-rate（Deviation）For 34.0%.On the other hand, it can be seen that：By to substrate periphery
Portion supplies H2Gas, is capable of the etch-rate of control base board peripheral part, H2The flow of gas more increases, the etching of substrate peripheral part
Speed is more reduced.In H2When gas flow is 100sccm, the uniformity of etch-rate（Deviation）For 19.5%, significantly improve.H2Gas
Uniformity when body flow is 50sccm（Deviation）For 28.8%, improvement is also obtained.Easily by loading the Al films for being affected
In the case of, rectification wall is used mostly, but, by the H as capture gas is supplied to substrate periphery portion2Gas, can confirm
Even if being not provided with rectification wall uniformity also improves.
（The checking of the quantity delivered of capture gas）
Then, the result according to more than, illustrates appropriate model of the quantity delivered relative to processing gas flow to capturing gas
Enclose the result verified.
The above results are to arrange ejection as the H of capture gas on one side of substrate2The gas jetting nozzle of gas, from this
H of the gas jetting nozzle supply as capture gas2Gas is captured obtained from impact of the gas to etch-rate to grasp, but
It is that the processing gas for actually supplying pass through four sides from the central part of substrate（Complete cycle 2400mm）Discharge.Therefore, checking below
Take and processing gas amount is scaled each edge for supplying capture gas to calculate the capture for needing relative relative to processing gas
The method of gas flow.
In addition, the above results are regarded as by making the reaction kind high as reactivity in processing gas（Spike）'s
F, Cl, O and the H as capture gas to the supply of substrate periphery portion2Gas reaction, forms HF, HCl, H2O is such to etching
Do not have contributive compound to discharge from chamber, reduce the reaction kind in substrate periphery portion.In fact, such as the above-mentioned Si film of Figure 11
Etching when substrate periphery portion plasma luminescent spectrum shown in, H2The flow of gas more increases, and wavelength is 656.5nm
The luminous of H more increase, wavelength is more reduced for the luminous of the F of 704nm.Therefore, the result below is using the point as premise.
The etching of Si film
In above-mentioned experimental example, as processing gas, using the SF of 100sccm6Gas, therefore, when utilizing plasma
When which is all dissociated, volume reaches 7 times, and it is 600sccm that volume flow becomes S for 100sccm, F.In addition, as described above, to
The processing gas of substrate supply are exhausted by 4 sides, therefore, when substrate complete cycle is 2400mm, the every 500mm's in side of substrate
The conversion amount of F is 125sccm.On the other hand, as the H of capture gas2Gas is 25～50sccm, therefore, work as all of which
During dissociation, volume reaches 2 times, and H is 50～100sccm.When the ratio of atomic weight is scaled, H atom amount is relative to F atom amount
For 40～80% scope.
·SiNxThe etching of film
In above-mentioned experimental example, as processing gas, using the SF of 200sccm6Gas, using the O of 100sccm2Gas,
Therefore, when they are all dissociated by plasma, S be 200sccm, F be 1200sccm, O for 200sccm, F and O volume
Flow is 1400sccm.Therefore, spike of the side of substrate per 500mm（Free radical）Conversion amount be 291.7sccm.The opposing party
Face, as the H of capture gas2Gas is 25～50sccm, therefore, when all of which is dissociated, H is 50～100sccm.When changing
When calculating the ratio for atomic weight, H atom amount is relative to spike（Free radical）Atomic weight is 17.1～34.3% scope.
The etching of Al films
In above-mentioned experimental example, as processing gas, using the BCl of 200sccm3Gas, using the Cl of 300sccm2Gas
Body, therefore, when they are all dissociated by plasma, the volume flow of Cl is 1200sccm.Therefore, the side of substrate is every
The conversion amount of the Cl of 500mm is 250sccm.On the other hand, as the H of capture gas2Gas is 50～100sccm, therefore, when
When they completely dissociate into, H is 100～200sccm.When the ratio of atomic weight is scaled, H atom amount relative to Cl atomic weighies is
40～80% scope.
In above-mentioned experimental example, processing gas amount is scaled into the atom flow to the supply of substrate each edge, phase is calculated
To the capture gas flow for needing.In fact, capture gas supply area is arranged on around substrate, accordingly, it would be desirable to capture gas
Body flow can be relatively defined relative to processing gas input amount.
Can be confirmed by above content：By supply as the H for capturing gas2Gas so that the H atom of unit interval supply
The scope that the ratio relative to the atomic weight of F, Cl, O in processing gas is 17～80% is measured, to the etching in substrate periphery portion speed
The control of rate has effect.
（Experimental example 2）
Then, the plasma-etching apparatus to utilizing the capacitively coupled with the structure same with Fig. 1 carry out imagination
The result of the experiment of actual treatment is illustrated.Substrate size is 730 × 920mm, captures gas and supplies to around substrate.
Here, carrying out imaginary LTPS（Low temperature polycrystalline silicon）The experiment of contact etching.Low temperature polycrystalline silicon contact etching, is to such as
Shown in Figure 12 in polysilicon（p-Si）101 superimposed layer SiO of film2Film 102, SiNxFilm 103, SiO2Film 104 and formed lamination knot
Structure is etched, and in the past, in the etching of polysilicon layer, becomes the high etch profile of the etch-rate of peripheral part, result in
Substrate peripheral part is susceptible to the etched problem of polysilicon film.Therefore, in this experimental example, for SiO2Film, SiNxFilm,
With display and the Si film of the equal etching characteristic of polysilicon film, H is being supplied from shower nozzle together with other gases2The feelings of gas
Condition and the periphery supply H to substrate2In the case that gas is as capture gas, it is etched under conditions of shown below.
Etching condition
Pressure：10mTorr
Source power：5000W
Substrate bias power：5000W
Processing gas and flow（Shower nozzle）：
C4F8 60sccm
Ar 100sccm
H2 100sccm、0sccm
Capture gas（H2Gas）Flow（Substrate periphery portion）：0sccm、100sccm
Additionally, in this case as capture gas H atomic weight relative to the atomic weight of the F as spike ratio
Rate is 41.7%.
By the etch-rate during etching of these films（Etch quantity）Distribution be shown in Figure 13～15.Figure 13,14 are respectively
SiO2Film and SiNxThe result of film, is no matter have undirected substrate periphery portion supply H2Gas, the inner evenness of etch-rate is all
Well.On the other hand, results of the Figure 15 for Si film, is not supplying H to substrate periphery portion2In the case of gas, substrate periphery
The etch-rate in portion rises, and the inner evenness of etch-rate is 44%, but by supplying H to substrate periphery portion2Gas, uniformly
Property is greatly improved to 10%.
Thus, can confirm：By supplying H to substrate periphery portion2Gas as capture gas, to SiO2Film and SiNxFilm
Etching has little to no effect, and the high Si film of etch-rate only strong to chemical reactivity, substrate peripheral part can improve etching
Distribution.Therefore, this method is can be described as in LTPS（Low temperature polycrystalline silicon）Contact etching in, it is incidental in substrate peripheral part
The etched very effective method of polysilicon film.
（Experimental example 3）
Then, illustrate by the use of except the H as capture gas will be supplied2Capture gas supply nozzle such as Fig. 4 institutes of gas
Show and be arranged on beyond the side of shading ring that the plasma-etching apparatus of the inductive type with the structure same with Fig. 6 enter
The result of row etching.Substrate size is 1850 × 1500mm.
In experimental example, imaginary LTPS is also carried out（Low temperature polycrystalline silicon）The experiment of contact etching.Specifically, as process
Gas, using C2HF5Gas, H2Gas, Ar gases, investigate by the H as capture gas2The SiO that the presence or absence of gas causes2Film and
The etch profile of Si films.
The results are shown in Figure 16.Figure 16 represents the etch-rate of the part of the 1/4 of substrate, centers of the C for substrate, and LC is
The center on long side, centers of the SC for minor face, angles of the Edge for substrate.Figure 16（a）It is that processing gas are C2HF5：300sccm、H2：
180sccm、Ar：240sccm, the capture result that is etched of gas is not used.Figure 16（b）、（c）It is by H2：180sccm is from
Remove in process gases, and which is made from the result of the capture gas jetting nozzle outflow in substrate periphery portion.Additionally, Figure 16（b）、（c）
In the case of as capture gas H atomic weight relative to the atomic weight of the F as spike ratio be 24% and 72%.
Such as Figure 16（a）It is shown, the H as capture gas is not being supplied to substrate periphery portion2In the case of gas, SiO2Film
Etch profile be that, than more uniform, in the case of Si films, the etch-rate of substrate peripheral part is high.On the other hand, will scheme
16（a）Processing gas in the H that includes2Figure 16 that gas is supplied to substrate periphery portion as capture gas（b）、（c）In, Si films
Etch profile improved, without upset SiO2The etch profile of film.In addition, being able to confirm that：With the H to substrate periphery portion2
The flow of gas is 180sccm's（b）Situation compare, flow is for 540sccm（c）Situation effect it is bigger.
Additionally, in the case where being etched to stack membrane of etch target film high including chemical reactivity etc., also can
Enough sides using the supply capture gas only in the etching step of the film of the control of the etch-rate for needing to carry out substrate peripheral part
Case is etched.
Additionally, the present invention is not limited to above-mentioned embodiment, various modifications can be carried out.For example, in above-mentioned embodiment party
In formula, it is illustrated by taking plasma etching as an example as corona treatment, but be not restricted to that plasma etching,
Can be other corona treatments such as plasma CVD.
In addition, in the above-described embodiment, exemplified with capacitively coupled and the plasma processing apparatus of inductive, but
It is to be not limited to this, as long as plasma can be generated within the chamber, or microwave plasma etc. is otherwise given birth to
Into the device of plasma.
Also, as capture gas, however it is not limited to H2Gas, as long as can with free radical isoreactivity kind react and by its
The gas of capture.Etch target film is also not necessarily limited to the film of above-mentioned embodiment.
In addition, in the above-described embodiment, to apply the present invention to FPD with the example of glass substrate said
It is bright, but be not restricted to that this, it is also possible to apply the present invention to other substrates such as semiconductor substrate, this is self-evident.
Claims (17)
1. a kind of plasma processing apparatus, which implements corona treatment, the spy of the plasma processing apparatus to substrate
Levy and be, possess：
For housing substrate, implementing the process container of corona treatment to the substrate；
The substrate-placing platform of substrate is loaded in the process container；
To the processing gas feed mechanism for supplying processing gas in the process container；
To the exhaust gear being exhausted in the process container；
The plasma signal generating unit of the plasma of the processing gas is generated in the process container；With
To the capture gas supply mechanism of the periphery supply capture gas of the substrate on the substrate-placing platform, the capture gas
Capture the spike in the plasma；
The capture gas supply mechanism is arranged at around the substrate of the substrate-placing platform.
2. a kind of plasma processing apparatus, which implements corona treatment, the spy of the plasma processing apparatus to substrate
Levy and be, possess：
For housing substrate, implementing the process container of corona treatment to the substrate；
The substrate-placing platform of substrate is loaded in the process container；
To the processing gas feed mechanism for supplying processing gas in the process container；
To the exhaust gear being exhausted in the process container；
The plasma signal generating unit of the plasma of the processing gas is generated in the process container；With
To the capture gas supply mechanism of the periphery supply capture gas of the substrate on the substrate-placing platform, the capture gas
Capture the spike in the plasma；
The processing gas feed mechanism with the process container to the substrate on the substrate-placing platform with shape spray
The shower nozzle of supply processing gas, the capture gas supply mechanism are arranged on around the shower nozzle.
3. plasma processing apparatus as claimed in claim 1 or 2, it is characterised in that：
The corona treatment is plasma etch process.
4. plasma processing apparatus as claimed in claim 3, it is characterised in that：
The processing gas be comprising F, Cl and O at least one gas, the capture gas be hydrogen.
5. plasma processing apparatus as claimed in claim 3, it is characterised in that：
The atomic number of the capture gas is 17～80% to the ratio of the atomic number of the spike in the processing gas.
6. plasma processing apparatus as claimed in claim 4, it is characterised in that：
The etch target of the plasma etch process is Si films, the SiN being formed on substratexAny one of film and Al films.
7. plasma processing apparatus as claimed in claim 6, it is characterised in that：
In the case where etch target is Si films, using F as spike, the atomic number of the capture gas is to place's qi-regulating
The ratio of the atomic number of the spike in body is 40～80%.
8. plasma processing apparatus as claimed in claim 6, it is characterised in that：
It is SiN in etch targetxIn the case of film, using F and O as spike, the atomic number of the capture gas is to the place
The ratio of the atomic number of the spike in process gases is 17.1～34.3%.
9. plasma processing apparatus as claimed in claim 6, it is characterised in that：
In the case where etch target is Al films, using Cl as spike, the atomic number of the capture gas is to the process
The ratio of the atomic number of the spike in gas is 40～80%.
10. the plasma processing apparatus that a kind of usage right requires described in 1 or 2 substrate is implemented corona treatment etc. from
Daughter processing method, it is characterised in that：
In the state of the substrate-placing platform in process container is placed with substrate, to supplying processing gas in process container, in institute
The plasma for stating generation processing gas in process container carries out corona treatment to substrate, now, the periphery to substrate
The capture gas of the spike in the supply capture plasma.
11. method of plasma processing as claimed in claim 10, it is characterised in that：
The corona treatment is plasma etch process.
12. method of plasma processing as claimed in claim 11, it is characterised in that：
The processing gas be comprising F, Cl and O at least one gas, the capture gas be hydrogen.
13. method of plasma processing as claimed in claim 11, it is characterised in that：
The atomic number of the capture gas is 17～80% to the ratio of the atomic number of the spike in the processing gas.
14. method of plasma processing as described in claim 12 or 13, it is characterised in that：
The etch target of the plasma etch process is Si films, the SiN being formed on substratexAny one of film and Al films.
15. method of plasma processing as claimed in claim 14, it is characterised in that：
In the case where etch target is Si films, using F as spike, the atomic number of the capture gas is to place's qi-regulating
The ratio of the atomic number of the spike in body is 40～80%.
16. method of plasma processing as claimed in claim 14, it is characterised in that：
It is SiN in etch targetxIn the case of film, using F and O as spike, the atomic number of the capture gas is to the place
The ratio of the atomic number of the spike in process gases is 17.1～34.3%.
17. method of plasma processing as claimed in claim 14, it is characterised in that：
In the case where etch target is Al films, using Cl as spike, the atomic number of the capture gas is to the process
The ratio of the atomic number of the spike in gas is 40～80%.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012259050A JP6017936B2 (en) | 2012-11-27 | 2012-11-27 | Plasma processing apparatus and plasma processing method |
| JP2012-259050 | 2012-11-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103839748A CN103839748A (en) | 2014-06-04 |
| CN103839748B true CN103839748B (en) | 2017-04-05 |
Family
ID=50803141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310616729.7A Active CN103839748B (en) | 2012-11-27 | 2013-11-27 | Plasma processing apparatus and method of plasma processing |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6017936B2 (en) |
| KR (2) | KR102011522B1 (en) |
| CN (1) | CN103839748B (en) |
| TW (1) | TWI608516B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI658509B (en) * | 2014-06-18 | 2019-05-01 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Chemistries for tsv/mems/power device etching |
| KR101649947B1 (en) * | 2014-07-08 | 2016-08-23 | 피에스케이 주식회사 | Apparatus for generating plasma using dual plasma source and apparatus for treating substrate comprising the same |
| CN112530776B (en) * | 2019-09-18 | 2024-02-09 | 中微半导体设备(上海)股份有限公司 | Plasma processing device |
| CN111599717B (en) | 2020-05-09 | 2024-03-26 | 北京北方华创微电子装备有限公司 | Semiconductor reaction chamber and atomic layer plasma etching machine |
| KR102587571B1 (en) * | 2020-11-10 | 2023-10-10 | 세메스 주식회사 | Apparatus and method for treating surface of component |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1478291A (en) * | 2000-09-28 | 2004-02-25 | ��ķ�о�����˾ | Chamber configuration for confining plasma |
| CN1490849A (en) * | 2002-09-06 | 2004-04-21 | ���������ƴ���ʽ���� | Si etching method and device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2625072B2 (en) * | 1992-09-08 | 1997-06-25 | アプライド マテリアルズ インコーポレイテッド | Plasma reactor using electromagnetic RF coupling and method thereof |
| JP3612158B2 (en) * | 1996-11-18 | 2005-01-19 | スピードファム株式会社 | Plasma etching method and apparatus |
| US6313042B1 (en) * | 1999-09-03 | 2001-11-06 | Applied Materials, Inc. | Cleaning contact with successive fluorine and hydrogen plasmas |
| TW514996B (en) * | 1999-12-10 | 2002-12-21 | Tokyo Electron Ltd | Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film |
| JP2002045683A (en) * | 2000-08-08 | 2002-02-12 | Hitachi Kokusai Electric Inc | Substrate processing device |
| JP3724436B2 (en) * | 2002-02-15 | 2005-12-07 | セイコーエプソン株式会社 | Rectifying wall, dry etching apparatus, and electro-optic device manufacturing method using the apparatus |
| JP2006344701A (en) * | 2005-06-08 | 2006-12-21 | Matsushita Electric Ind Co Ltd | Etching device and etching method |
| JP2008016479A (en) * | 2006-07-03 | 2008-01-24 | Philtech Inc | Manufacturing method of semiconductor device |
-
2012
- 2012-11-27 JP JP2012259050A patent/JP6017936B2/en active Active
-
2013
- 2013-11-18 KR KR1020130139543A patent/KR102011522B1/en active IP Right Grant
- 2013-11-20 TW TW102142271A patent/TWI608516B/en active
- 2013-11-27 CN CN201310616729.7A patent/CN103839748B/en active Active
-
2017
- 2017-10-16 KR KR1020170133802A patent/KR20170118663A/en not_active Application Discontinuation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1478291A (en) * | 2000-09-28 | 2004-02-25 | ��ķ�о�����˾ | Chamber configuration for confining plasma |
| CN1490849A (en) * | 2002-09-06 | 2004-04-21 | ���������ƴ���ʽ���� | Si etching method and device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140067905A (en) | 2014-06-05 |
| JP2014107405A (en) | 2014-06-09 |
| JP6017936B2 (en) | 2016-11-02 |
| KR102011522B1 (en) | 2019-08-16 |
| KR20170118663A (en) | 2017-10-25 |
| TW201435963A (en) | 2014-09-16 |
| TWI608516B (en) | 2017-12-11 |
| CN103839748A (en) | 2014-06-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI664676B (en) | Etching method | |
| CN103839748B (en) | Plasma processing apparatus and method of plasma processing | |
| CN103247754B (en) | Automatically adjust without wafer | |
| TWI446436B (en) | Plasma etching method, plasma etching device, control program and computer memory media | |
| TW201820461A (en) | High dry etch rate materials for semiconductor patterning applications | |
| KR101870491B1 (en) | Plasma processing appratus, substrate processing system, fabrication method of thin film transistor, and storage medium | |
| CN104867827A (en) | Etching method | |
| TW201546314A (en) | RF cycle purging to reduce surface roughness in metal oxide and metal nitride films | |
| KR20180000692A (en) | Etching method | |
| JP2013033856A (en) | Plasma etching method | |
| JP2014103155A (en) | Plasma processing method and plasma processing device | |
| TWI612577B (en) | Semiconductor device manufacturing method and computer recording medium | |
| JP6017928B2 (en) | Plasma etching method and plasma etching apparatus | |
| TW201840248A (en) | Plasma processing method and plasma processing device | |
| JP6760439B2 (en) | Manufacturing method of thin film and storage medium | |
| CN104576453B (en) | Method of plasma processing and plasma processing apparatus | |
| KR102152088B1 (en) | Plasma processing method and plasma processing apparatus | |
| KR20120010980A (en) | Plasma processing method and storage medium | |
| TW201818465A (en) | Method of processing target object | |
| CN109219866A (en) | Engraving method | |
| TWI809086B (en) | Etching method and plasma processing apparatus | |
| TW201812902A (en) | Method for processing member to be processed | |
| TW201909272A (en) | Method of cleaning plasma processing | |
| JP7321059B2 (en) | Plasma processing method and plasma processing apparatus | |
| JP2022099113A (en) | Processing method and plasma processing apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |