CN103839748A - Plasma processing apparatus and plasma processing method - Google Patents
Plasma processing apparatus and plasma processing method Download PDFInfo
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- CN103839748A CN103839748A CN201310616729.7A CN201310616729A CN103839748A CN 103839748 A CN103839748 A CN 103839748A CN 201310616729 A CN201310616729 A CN 201310616729A CN 103839748 A CN103839748 A CN 103839748A
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- 238000003672 processing method Methods 0.000 title 1
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- 239000007789 gas Substances 0.000 claims description 267
- 238000000034 method Methods 0.000 claims description 48
- 230000008569 process Effects 0.000 claims description 27
- 239000001257 hydrogen Substances 0.000 claims description 26
- 229910052739 hydrogen Inorganic materials 0.000 claims description 26
- 238000009832 plasma treatment Methods 0.000 claims description 21
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 239000007921 spray Substances 0.000 claims description 8
- 150000003254 radicals Chemical class 0.000 abstract description 31
- 230000009257 reactivity Effects 0.000 abstract description 7
- 238000007599 discharging Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 32
- 238000001020 plasma etching Methods 0.000 description 31
- 230000002093 peripheral effect Effects 0.000 description 19
- 229910021417 amorphous silicon Inorganic materials 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
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- 230000005593 dissociations Effects 0.000 description 7
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- 238000009826 distribution Methods 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 6
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- 238000005516 engineering process Methods 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 206010013457 Dissociation Diseases 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Abstract
The invention provides a plasma processing apparatus without using a rectifier wall or a sacrificial part consuming large amount of free radical, so reactivity of a periphery portion of a processed substrate can be reduced, thereby carrying out uniform plasma processing; the plasma processing apparatus comprises the following elements: a processing container (2) used for containing the substrate (G) and carrying out plasma processing to the substrate (G); a substrate carrier table (4) carrying the substrate (G) in the processing container (2); processing gas supply mechanisms (20, 28) providing processing gas in the processing container; a gas discharge mechanism (30) discharging gas in the processing container (2); a high frequency power supply (14a) of a plasma source of the plasma and used for generating the processing gas in the processing container (2); capture gas supply mechanisms (16, 19) used for providing capture gas to the periphery portion of the substrate (G) on the substrate carrier table (4), and the capture gas captures reactive types in the plasma.
Description
Technical field
The present invention relates to plasma processing apparatus and the method for plasma processing of the plasma treatment of carrying out plasma etching etc.
Background technology
In the manufacture process of flat-panel monitor (FPD) and semiconductor device, processed substrate is used to etching, sputter, CVD(chemical vapour deposition (CVD) mostly) etc. plasma treatment.
For example, in the situation that carrying out plasma etching as plasma treatment, utilize plasma to make to process gaseous dissociation activation, make the free radical isoreactivity kind and the etch target film reaction that generate.
Be the film that chemical reactivity is high at etch target film, due to the impact of load (loading), can see the trend that the etch-rate of the periphery of processed substrate uprises, this can restrict etched uniformity mostly.
As the technology that suppresses such trend uprising at circumference etch-rate, the known mode that has to surround processed substrate configures the mobile technology (for example patent documentation 1) that suppresses the processing gas of processed substrate circumference as the rectification wall of vertical sidewall.In addition, also can consider that such exterior lateral area that is configured in processed substrate using parts many free radical consumption as sacrifice part of recording in patent documentation 2 reduces the method for the impact of load.
Prior art document
Patent documentation
Patent documentation 1: TOHKEMY 2003-243364 communique
Patent documentation 2: Japanese kokai publication hei 5-190502 communique
Summary of the invention
The technical problem solving is wanted in invention
But, in the situation that using rectification wall, need to make rectification wall optimization according to the kind of etch target film, etching condition (scheme), very miscellaneous.In addition, in the case of using the sacrifice part that free radical consumption is many, be running stores because sacrifice part, so need periodic replacement, the time and the cost that need cost to change.In addition, two kinds of technology, in situation about continuously multiple etch layers being processed etc., all can impact other etch target film, produce technologic unfavorable condition.
The present invention In view of the foregoing makes, its technical problem that will solve is to provide and can use rectification wall or the many sacrifice parts of free radical consumption, and makes the reactivity of the periphery of processed substrate reduce to carry out plasma processing apparatus and the method for plasma processing of uniform plasma treatment.
For the technical scheme of technical solution problem
In order to solve the problems of the technologies described above, in a first aspect of the present invention, a kind of plasma processing apparatus is provided, it is the plasma processing apparatus of substrate being implemented to plasma treatment, it is characterized in that possessing: for accommodating substrate, this substrate is implemented to the container handling of plasma treatment; In above-mentioned container handling, load the substrate-placing platform of substrate; To supplying with the processing gas supply mechanism of processing gas in above-mentioned container handling; To carrying out the exhaust gear of exhaust in above-mentioned container handling; In above-mentioned container handling, generate the plasma generation unit of the plasma of above-mentioned processing gas; Supply with the gas supply mechanism of catching of catching gas with the periphery of the substrate on above-mentioned substrate-placing platform, this catches the spike in the above-mentioned plasma of gas entrapment.
In a second aspect of the present invention, a kind of method of plasma processing of substrate being implemented to plasma treatment is provided, it is characterized in that: the substrate-placing platform in container handling is placed with under the state of substrate, process gas to supplying with in container handling, the plasma that generates processing gas in above-mentioned container handling carries out plasma treatment to substrate, now, the periphery of substrate is supplied with the gas of catching of the spike of catching in above-mentioned plasma.
In above-mentioned first aspect and second aspect, above-mentioned plasma treatment can be plasma etch process.In addition, above-mentioned processing gas is at least one the gas comprising in F, Cl and O, and the above-mentioned gas of catching is hydrogen.In addition, the ratio of the atomicity of above-mentioned atomicity of catching gas to the spike in above-mentioned processing gas is 17～80%.
In the situation that above-mentioned plasma treatment is plasma etch process, etch target can be Si film, the SiN forming on substrate
xany one in film and Al film.In the situation that etch target is Si film, can use F as spike, the ratio of the atomicity of above-mentioned atomicity of catching gas to the spike in above-mentioned processing gas can be 40～80%.Be SiN at etch target
xin the situation of film, can use F and O as spike, the ratio of the atomicity of above-mentioned atomicity of catching gas to the spike in above-mentioned processing gas can be 17.1～34.3%.In the situation that etch target is Al film, can use Cl as spike, the ratio of the atomicity of above-mentioned atomicity of catching gas to the spike in above-mentioned processing gas can be 40～80%.
In above-mentioned first aspect, above-mentionedly catch substrate that gas supply mechanism can be arranged at aforesaid substrate mounting table around.In addition, above-mentioned processing gas supply mechanism can have in above-mentioned container handling to the substrate in aforesaid substrate mounting table supplies with the shower nozzle of processing gas with shape spray, and the above-mentioned gas supply mechanism of catching can be arranged on above-mentioned shower nozzle around.
In a third aspect of the present invention, a kind of storage medium is provided, it stores on computers operation, for controlling the program of plasma processing apparatus, it is characterized in that: said procedure is in the time carrying out, make the above-mentioned plasma processing apparatus of computer control, make to carry out the method for plasma processing of above-mentioned second aspect.
Invention effect
According to the present invention, in the time of plasma treatment, supply with the gas of catching of the spike of catching in plasma to the periphery of the substrate on substrate-placing platform.Therefore, when large in the peripheral part plasma treatment speed of substrate, can make the processing speed of this part reduce, can make the uniformity that plasma treatment distributes improve.
Brief description of the drawings
Fig. 1 is the sectional view representing as the plasma-etching apparatus of the plasma processing apparatus of the first execution mode of the present invention.
Fig. 2 is the sectional view of the substrate-placing platform in the plasma-etching apparatus of presentation graphs 1 partly.
Fig. 3 is the plane graph of the substrate-placing platform in the plasma-etching apparatus of presentation graphs 1.
Fig. 4 is the sectional view that represents another example of catching gas jetting nozzle.
Fig. 5 is the sectional view that represents another example of catching gas jetting nozzle.
Fig. 6 is the sectional view representing as the plasma-etching apparatus of the plasma processing apparatus of the second execution mode of the present invention.
Fig. 7 is the schematic diagram for experimental example 1 is described.
Fig. 8 represents that the conduct that a-Si film is carried out in the situation of plasma etching catches the H of gas
2the figure to the quantity delivered of substrate periphery portion and the relation of etch profile of gas.
Fig. 9 represents SiN
xthe H of gas is caught in the conduct that film carries out in the situation of plasma etching
2the figure to the quantity delivered of substrate periphery portion and the relation of etch profile of gas.
Figure 10 represents that the conduct that Al film is carried out in the situation of plasma etching catches the H of gas
2the figure to the quantity delivered of substrate periphery portion and the relation of etch profile of gas.
Figure 11 is the H supplying with to substrate periphery portion while representing the etching of a-Si film
2the figure of the relation of the amount of gas and the luminescent spectrum of plasma.
Figure 12 is the sectional view of the laminated construction of the etch target while representing imaginary LTPS contact etch in experimental example 2.
Figure 13 be represent in experimental example 2 by the H as catching gas
2the supply of gas have or not the SiO causing
2the figure of the etch profile of film.
Figure 14 be represent in experimental example 2 by the H as catching gas
2the supply of gas have or not the SiN causing
xthe figure of the etch profile of film.
Figure 15 be represent in experimental example 2 by the H as catching gas
2the figure of the etch profile that has or not the a-Si film causing of the supply of gas.
Figure 16 is the figure that represents the result of experimental example 3.
Description of reference numerals
1,1 ': plasma-etching apparatus (plasma processing apparatus)
2,2 ': chamber (container handling)
4: substrate-placing platform
5: base material
6: insulating element
7: shading ring
14a, 58: the first high frequency electric sources
14b: the second high frequency electric source
16: catch gas jetting nozzle
17: gas vent
18: gas flow path
19: catch gas supply source
20: shower nozzle
25: process gas supply pipe
28: process gas supply source
29: blast pipe
30: exhaust apparatus
31: move into and take out of mouth
40: control part
55: high frequency antenna
G: substrate
Embodiment
Below, with reference to accompanying drawing, embodiments of the present invention are described.
In the present invention, as an example of plasma processing apparatus, plasma Etaching device describes.
< the first execution mode >
First, the first execution mode is described.
Fig. 1 is the sectional view representing as the plasma-etching apparatus of the plasma processing apparatus of the first execution mode of the present invention, Fig. 2 is the sectional view of the substrate-placing platform in the plasma-etching apparatus of presentation graphs 1 partly, and Fig. 3 is the plane graph of the substrate-placing platform in the plasma-etching apparatus of presentation graphs 1.
As shown in Figure 1, this plasma-etching apparatus 1 is configured to glass substrate that FPD is used (following, to note by abridging as " substrate ") G and carries out etched capacitive coupling plasma Etaching device.Illustrate and have liquid crystal display (LCD), electroluminescence (Electro Luminescence as FPD; EL) display, plasma display (PDP) etc.Plasma-etching apparatus 1 possesses the chamber 2 as container handling, and this chamber 2 is accommodated the substrate G as processed substrate.The aluminium that chamber 2 has for example carried out pellumina processing (anodized) by surface forms, and is formed as accordingly quadrangular barrel shape with the shape of substrate G.
Bottom in chamber 2 is provided with the substrate-placing platform 4 working as lower electrode across the insulation board 3 being formed by insulating material.Substrate-placing platform 4 is formed by metal, for example aluminium, possesses: the base material 5 being formed by metal, for example aluminium, and this base material 5 has the flange part 5b of the protuberance 5a of the central portion that is formed on top and the surrounding of protuberance 5a; With the insulating element 6 that is arranged on mounting surface on protuberance 5a, that there is substrate G.Be provided with plane adsorption electrode 6a in the inside of insulating element 6, be configured for substrate G to carry out the electrostatic chuck of Electrostatic Absorption by these.On flange part 5b, be provided with in the mode that the substrate G of mounting is surrounded the shading ring 7 being formed by the insulator of frame shape.In addition, be provided with dead ring 8 in the mode that the surrounding of base material 5 is surrounded.Insulating element 6, shading ring 7, dead ring 8 are for example made up of the such insulating ceramics of aluminium oxide.
At the upper surface of shading ring 7, mode at its complete cycle so that the mounting surface of substrate G is surrounded, be provided be frame shape catch gas jetting nozzle 16, this catches the hydrogen (H that catch gas of gas jetting nozzle 16 ejections as the spike (free radical) for catching plasma
2gas).Spread all over complete cycle at the upper surface of catching gas jetting nozzle 16 and be formed with multiple gas vents 17.Catch gas jetting nozzle 16 and be connected with gas flow path 18, the other end of gas flow path 18 is connected with the gas supply source 19 of catching of supplying with as the hydrogen of catching gas.As the hydrogen of catching gas, arrive and catch gas jetting nozzle 16 by gas flow path 18 from catching gas supply source 19, spray from multiple gas vents 17, be supplied to the periphery of the substrate G on substrate-placing platform 4.
In substrate-placing platform 4, can give prominence to and submerge with respect to the upper surface (being the upper surface of insulating element 6) of substrate-placing platform 4 be provided with multiple lifter pins (not shown) of the handing-over for carrying out substrate G, and the handing-over of substrate G is carried out with respect to the lifter pin of the state that is projected into top from the upper surface of substrate-placing platform 4.
On the top of chamber 2, be provided with the shower nozzle 20 of processing gas and working as upper electrode to the interior supply of chamber 2 in the mode relative with substrate-placing platform 4.Shower nozzle 20 is formed with in inside and makes to process the gas diffusion space 21 of gas diffusion and be formed with at lower surface or the opposite face relative with substrate-placing platform 4 the multiple squit holes 22 that spray processing gas.These shower nozzle 20 ground connection form pair of parallel plate electrode together with substrate-placing platform 4.
Be provided with gas introduction port 24 at the upper surface of shower nozzle 20, this gas introduction port 24 is connected with processing gas supply pipe 25, and this processing gas supply pipe 25 is connected with processing gas supply source 28.On processing gas supply pipe 25, be provided with valve 26 and mass flow controller 27.Supply with for etched processing gas from processing gas supply source 28.As processing gas, can use normally used processing gas in this field, can use best material according to the film of processing.As such processing gas, typically can use at least one the gas comprising in F, Cl and O.These form respectively and comprise reactive high F, Cl, the spike (free radical) of O.
Be connected with blast pipe 29(at 4 angles of the diapire of chamber 2 and only illustrate 2), this blast pipe 29 is connected with exhaust apparatus 30, on this blast pipe 29, is provided with not shown pressure-regulating valve.Exhaust apparatus 30 possesses turbomolecular pump equal vacuum pump, thus, is configured to and can, to carrying out exhaust in chamber 2, be evacuated to the reduced atmosphere of regulation.At the sidewall of chamber 2, be formed with for moving into and take out of moving into of substrate G and take out of mouthfuls 31 and be provided with and open and close this and move into the gate valve 32 of taking out of mouthfuls 31, be configured to when moving into and take out of mouthfuls 31 when open, utilize not shown conveyance unit that substrate G is taken out of to moving into inside and outside chamber 2.
In addition, plasma-etching apparatus 1 possesses control part 40, and this control part 40 has processing controller, and this processing controller possesses the microprocessor (computer) of the each formation portion for controlling plasma-etching apparatus 1.Control part 40 also has: user interface, and this user interface comprises by operator and carries out the keyboard of the input operations such as the order input for managing plasma Etaching device 1 and by display of the visual demonstration of operational situation of plasma-etching apparatus 1 etc.; And storage part, this storage portion stores be useful on by the control of processing controller realize the control program of the various processing of being carried out by plasma-etching apparatus 1 and for make according to treatment conditions plasma processing apparatus respectively form portion carry out process program be processing scheme.Processing scheme is stored in the storage medium in storage part.Storage medium can, for being built in hard disk or the semiconductor memory in computer, can be also the movably storage medium such as CDROM, DVD, flash memory.In addition, also can make from other device by the suitable transfer scheme of for example special circuit.And, can be as required, utilize to recall processing scheme arbitrarily from the instruction of user interface etc. from storage part processing controller is carried out, thus, and under the control of processing controller, the processing of expecting in plasma-etching apparatus.
Then, the processing action in the plasma-etching apparatus 1 of said structure is described.Following processing action is carried out under the control of control part 40.
First, utilize exhaust apparatus 30 to become the pressure of regulation to carrying out exhaust in chamber 2, by open gate valve 32, utilize conveyance unit (not shown) to take out of mouthfuls 31 and move into substrate G from the adjacent carrying room that is retained as vacuum (not shown) by moving into, under the state that makes not shown lifter pin increase, receive substrate G thereon, by lifter pin is declined, substrate G is loaded on substrate-placing platform 4.Make conveyance unit from chamber 2 is kept out of the way, gate valve 32 is closed.
Under this state, process gas and utilize pressure-regulating valve the pressure in chamber 2 to be adjusted into the vacuum degree of regulation to the interior supply of chamber 2 by processing gas supply pipe 25 and shower nozzle 20 from processing gas supply source 28.
From the first high frequency electric source 14a by adaptation 13a to substrate-placing platform 4(base material 5) apply plasma and generate the High frequency power of use, between the substrate-placing platform 4 as lower electrode and the shower nozzle 20 as upper electrode, produce high-frequency electric field and make the processing gaseous plasma in chamber 2.In addition, from the second high frequency electric source 14b by adaptation 13b to substrate-placing platform 4(base material 5) apply biasing use High frequency power, the ion in plasma is introduced to substrate G effectively.Now, by applying direct voltage from DC power supply 15 to adsorption electrode 6a, utilize Coulomb force that substrate G is absorbed and fixed to substrate-placing platform 4(insulating element 6 by plasma) mounting surface on.
Thus, carry out the plasma etch process of the film of the regulation to substrate G.Now, as processing gas, can use best material according to the film of processing, for example, can use the spike (free radical) that utilizes plasma to generate to comprise reactive high F, Cl, O, comprise at least one the gas in F, Cl and O.
In the time of plasma etch process, there is a lot of unreacted processing gas at the periphery of substrate G, therefore, in the time that etch target film is the high film of chemical reactivity, due to load effect, the etch-rate of the periphery of substrate G uprises.
Therefore, in the present embodiment, supply with hydrogen as the catch gas of catching spike (free radical) plasma from being arranged at multiple gas vents 17 of catching gas jetting nozzle 16 to the periphery of substrate G by gas flow path 18 from catching gas supply source 19.Thus, at the periphery of substrate G, spike (free radical) is hunted down.Specifically, the spike (free radical) that comprises reactive high F, Cl, O in existence, they become HF, HCl, H at periphery and the hydrogen reaction of substrate G
2what O was such does not have contributive composition to etching, is discharged from chamber 2.Therefore, at the periphery of the high substrate G of etch-rate, the amount of spike (free radical) reduces, and etch-rate declines, and in the face of substrate G, etch-rate is homogenized.
Like this, comprise reactive high F, Cl, O in use spike (free radical) time, supply with hydrogen as catching gas by the periphery to substrate G, can catch these spikes (free radical), but, even other the hydrogen source such as hydroperoxyl radical, also can work as catching gas.In addition, as long as can react with spike (free radical) to generate, etching is not had to contributive composition, can use the gas of catching beyond hydrogen yet.
The flow of catching gas is more, and the effect of catching spike (free radical) is higher, therefore, catches the flow of gas by control, can carry out the distribution control of the etch-rate of substrate G.The flow of in this case, preferably catching gas is to catch the flow that the atomic weight of gas is 17～80% with respect to the atomic weight of spike.
As object lesson, in the time of etching method for amorphous silicon (a-Si) film, can preferably use SF as processing gas
6gas, is using hydrogen (H
2) gas is as catching in the situation of gas, preferably supplies with hydrogen with respect to the F atomic weight as spike (free radical) as 40～80% flow taking H atomic weight.In addition, at etching SiN
xwhen film, as reaction kind, can preferably use SF
6gas and oxygen (O
2) mist of gas, using hydrogen (H
2) gas is as catching in the situation of gas, preferably supplies with hydrogen with respect to the atomic weight of the F as spike (free radical), O as 17.1～34.3% flow taking H atomic weight.In addition, in the time of etching Al film, can preferably use BCl
3, Cl
2, using hydrogen (H
2) gas is as catching in the situation of gas, preferably supplies with hydrogen with respect to the Cl atomic weight as spike (free radical) as 40～80% flow taking H atomic weight.
After processing finishes, the first high frequency electric source 14a and the second high frequency electric source 14b are closed, and stop to adsorption electrode 6a power supply, Electrostatic Absorption being removed, utilize lifter pin (not shown) that substrate G is risen, gate valve 32 is opened, substrate G after treatment is taken out of to mouthfuls 31 and takes out of from moving into.
In the present embodiment, periphery to substrate G is supplied with the gas of catching of catching spike (free radical), the amount of the spike (free radical) of the periphery of substrate G is reduced, therefore, can make the etch-rate of the periphery of substrate G reduce to carry out the plasma etching that inner evenness is high.Like this, can not use rectification wall or sacrifice part, and the etch-rate of the periphery of substrate G is reduced, therefore, can eliminate: in the situation that using rectification wall, need to make the optimized problem of rectification wall according to the kind of etch target film and etching condition (scheme); Using the problem of sacrificing part in the situation that spended time and cost due to periodic replacement; In this two side, become problem problem, that in situation about continuously multiple etch layers being processed etc., other etch target film is impacted.
As the supply mode of hydrogen of catching gas, as long as supply with to the periphery of substrate G, be not limited to the mode of Fig. 1.For example, can be as shown in Figure 4, will catch gas jetting nozzle 16 and be arranged on the side of shading ring 7, in addition, and also can be as shown in Figure 5, will catch gas jetting nozzle 16 and be arranged on the peripheral part of shower nozzle 20, from substrate G, the periphery of direction substrate G is supplied with hydrogen.
< the second execution mode >
Then, the second execution mode of the present invention is described.
Fig. 6 is the sectional view of expression as the plasma-etching apparatus of the plasma processing apparatus of the second execution mode of the present invention.
As shown in Figure 6, this plasma-etching apparatus 1 ' be configured to inductance coupling high type plasma-etching apparatus.In Fig. 6, mark identical symbol for the part common with Fig. 1, explanation is simplified.
This plasma-etching apparatus 1 ' chamber 2 ', roof 52 is by for example Al
2o
3form on pottery or the such dielectric of quartz, embed the criss-cross spray framework 51 that is that has processing gas to supply with use in the lower portion of roof 52, in addition, similarly form with chamber 2.
Spray framework 51 for example, is made up of conductive material, the aluminium that carried out anodized.In this spray framework 51, be formed with the gas flow path 53 flatly extending, this gas flow path 53 is communicated with the multiple gas squit holes 54 that extend downwards.On the other hand, be provided with gas introduction port 24 in the upper face center of roof 52, same with the device of Fig. 1, gas introduction port 24 is connected with processing gas supply pipe 25, and this processing gas supply pipe 25 is connected with processing gas supply source 28.
Be provided with high frequency (RF) antenna 55 along the upper surface of roof 52, high frequency antenna 55 is connected with supply lines 56, and this supply lines 56 is connected with the first high frequency electric source 58 that adaptation 57 and plasma generate (source) use.By supplying with to high frequency antenna 55 High frequency power that for example frequency is 13.56MHz from the first high frequency electric source 58, at chamber 2 ' interior formation induction field, utilize this induction field to make the processing gaseous plasma spraying from spray framework 51.
On the other hand, the base material 5 of substrate-placing platform 4 is connected with supply lines 12, and the second high frequency electric source 14b that this supply lines 12 only applies use with adaptation 13b and bias voltage is connected.
Such plasma-etching apparatus 1 ' in, similarly substrate G is positioned on substrate-placing platform 4 with the first execution mode, process gas, and utilize pressure-regulating valve that chamber 2 ' interior pressure is adjusted into the vacuum degree of regulation to chamber 2 ' interior supply by processing gas supply pipe 25 and spraying framework 51 from processing gas supply source 28.Then, apply High frequency power from the first high frequency electric source 58 to high frequency antenna 55, thus by the roof 52 that formed by dielectric at chamber 2 ' interior induction field that forms.Utilize the induction field forming like this, chamber 2 ' in make to process gaseous plasma, the inductively coupled plasma of generating high density, carries out plasma etch process to substrate G.Now, from the second high frequency electric source 14b by adaptation 13b to substrate-placing platform 4(base material 5) apply the High frequency power that bias voltage is used, ion in plasma is introduced to substrate G effectively, by applying direct voltage from DC power supply 15 to adsorption electrode 6a, substrate G utilizes Coulomb force to be absorbed and fixed at substrate-placing platform 4(insulating element 6 by plasma) mounting surface on.
Carry out in etched situation at such inductively coupled plasma that utilizes, also there is a lot of unreacted processing gas at the periphery of substrate G, therefore, in the time that etch target film is the high film of chemical reactivity, due to load effect, the etch-rate of the periphery of substrate G uprises.
Therefore, same with the first execution mode, supply with hydrogen to the periphery of substrate G, as the gas of catching of catching spike (free radical) in plasma.Thus, at the periphery of substrate G, spike (free radical) is hunted down.Therefore, at the periphery of the high substrate G of etch-rate, the amount of spike (free radical) reduces, and etch-rate reduces, and in the face of substrate G, etch-rate is homogenized.
< experimental example >
Then, experimental example is described.
(experimental example 1)
At this, as shown in Figure 7, the substrate of 550 × 650mm being carried out in etched capacitive coupling plasma Etaching device, in the part corresponding with shading ring of the minor face of substrate-placing platform, be provided for spraying the gas jetting nozzle 16 of hydrogen in the scope of 500mm, from being formed at multiple gas vents of this gas jetting nozzle, supply with hydrogen with the flow specifying, utilize the processing gas of regulation to carry out the etch processes of film shown below simultaneously.Measure the end of the supply hydrogen from substrate now to the distribution of the etch-rate of substrate center.
The etching of a-Si film
For the a-Si film of impact that is easily subject to F free radical, make primary condition as follows, make hydrogen (H
2gas) flow with 0,25,50sccm changes and carries out etching.
Primary condition
Pressure: 60mTorr
Source power: 3000W
Substrate bias power: 300W
Process gas and flow:
SF
6?100sccm
Ar?200sccm
The distribution of the etch-rate during by the etching of such a-Si film is shown in Fig. 8.
As shown in the drawing, do not supply with H in utilization
2the method in the past of gas is carried out in etched situation, and the etch-rate of substrate peripheral part is very high, and the uniformity (deviation) of etch-rate is 17.9%.On the other hand, can find out: by supplying with H to substrate periphery portion
2gas, can almost not affect the etch-rate of central portion, and only controls the etch-rate of substrate peripheral part, H
2the flow of gas more increases, and the etch-rate of substrate peripheral part more reduces.Work as H
2when gas flow is 25sccm, the uniformity of etch-rate (deviation) is very little, is 5.8%.Work as H
2when gas flow becomes 50sccm, the etch-rate of substrate peripheral part further reduces, and uniformity (deviation) becomes greatly to 17.2%.Known: can to make the etch-rate of substrate center portion further reduce, can utilize H
2flow control etch profile.
SiN
xfilm etching
For the SiN of impact that is easily subject to F free radical and O free radical
xfilm, makes primary condition as follows, makes hydrogen (H
2gas) flow with 0,25,50sccm changes and carries out etching.
Primary condition
Pressure: 60mTorr
Source power: 3000W
Substrate bias power: 300W
Process gas and flow:
SF
6?200sccm
O
2?100sccm
By such SiN
xthe distribution of the etch-rate when etching of film is shown in Fig. 9.
As shown in the drawing, do not supply with H in utilization
2the method in the past of gas is carried out in etched situation, and the etch-rate of substrate peripheral part is very high, and the uniformity (deviation) of etch-rate is 15.8%.On the other hand, can find out: by supplying with H to substrate periphery portion
2gas, can almost not affect the etch-rate of central portion, and only controls the etch-rate of substrate peripheral part, H
2the flow of gas more increases, and the etch-rate of substrate peripheral part more reduces.At H
2when gas flow is 50sccm, the uniformity of etch-rate (deviation) is very little, is 5.3%.H
2when gas flow is 25sccm, effect is also very large, and uniformity (deviation) is 6.4%.
The etching of Al film
For the Al film of impact that is easily subject to Cl free radical, make primary condition as follows, make hydrogen (H
2gas) flow with 0,50,100sccm changes and carries out etching.
Primary condition
Pressure: 20mTorr
Source power: 1500W
Substrate bias power: 50W
Process gas and flow:
BCl
3?200sccm
Cl
2?300sccm
The distribution of the etch-rate during by the etching of such Al film is shown in Figure 10.
As shown in the drawing, do not supply with H in utilization
2the method in the past of gas is carried out in etched situation, and the etch-rate of substrate peripheral part is very high, and the uniformity (deviation) of etch-rate is 34.0%.On the other hand, can find out: by supplying with H to substrate periphery portion
2gas, can control the etch-rate of substrate peripheral part, H
2the flow of gas more increases, and the etch-rate of substrate peripheral part more reduces.At H
2when gas flow is 100sccm, the uniformity of etch-rate (deviation) is 19.5%, significantly improves.H
2uniformity when gas flow is 50sccm (deviation) is 28.8%, and effect also improves.In the case of the Al film of impact that is easily subject to load, mostly use rectification wall, still, by supplying with as catching the H of gas to substrate periphery portion
2gas, also improves even if can confirm not arrange rectification wall uniformity.
(catching the checking of the quantity delivered of gas)
Then,, according to above result, the result that the quantity delivered to catching gas is verified with respect to the proper range of processing gas flow is described.
The above results is ejection to be set as catching the H of gas on one side of substrate
2the gas jetting nozzle of gas, supplies with as catching the H of gas from this gas jetting nozzle
2gas is grasped and is caught gas the impact of etch-rate is obtained, and still, the processing gas of in fact supplying with is discharged by four limits (complete cycle 2400mm) from the central portion of substrate.Therefore, following checking is taked to be scaled and to supply with every limit of catching gas and calculate the method for catching gas flow relatively needing with respect to processing gas processing gas flow.
In addition, the above results can be thought F, Cl, the O by making to process the reactive high reaction kind (spike) of conduct in gas and catch the H of gas to the conduct of substrate periphery portion supply
2gas reaction, forms HF, HCl, H
2what O was such does not have contributive compound to discharge from chamber to etching, and the reaction kind of substrate periphery portion is reduced.In fact, as shown in the luminescent spectrum of the plasma of the substrate periphery portion during as the etching of the above-mentioned a-Si film of Figure 11, H
2the flow of gas more increases, and the luminous of the H that wavelength is 656.5nm more increases, and the luminous of the F that wavelength is 704nm more reduces.Therefore, following the result is using this point as prerequisite.
The etching of a-Si film
In above-mentioned experimental example, as processing gas, use the SF of 100sccm
6gas, therefore, in the time utilizing plasma to make its whole dissociation, volume reaches 7 times, and it is that 100sccm, F are 600sccm that volume flow becomes S.In addition, as mentioned above, the processing gas of supplying with to substrate carries out exhaust by 4 limits, and therefore, in the time that substrate complete cycle is 2400mm, the conversion amount of the F of the every 500mm in limit of substrate is 125sccm.On the other hand, as the H that catches gas
2gas is 25～50sccm, and therefore, in the time of their whole dissociations, volume reaches 2 times, and H is 50～100sccm.In the time being scaled the ratio of atomic weight, the scope that H atomic weight is 40～80% with respect to F atomic weight.
SiN
xthe etching of film
In above-mentioned experimental example, as processing gas, use the SF of 200sccm
6gas, the O of use 100sccm
2gas, therefore, when they are during by the whole dissociation of plasma, S is that 200sccm, F are that 1200sccm, O are 200sccm, the volume flow of F and O is 1400sccm.Therefore, the conversion amount of the spike (free radical) of the every 500mm in limit of substrate is 291.7sccm.On the other hand, as the H that catches gas
2gas is 25～50sccm, and therefore, in the time of their whole dissociations, H is 50～100sccm.In the time being scaled the ratio of atomic weight, the scope that H atomic weight is 17.1～34.3% with respect to spike (free radical) atomic weight.
The etching of Al film
In above-mentioned experimental example, as processing gas, use the BCl of 200sccm
3gas, the Cl of use 300sccm
2gas, therefore, when they are during by the whole dissociation of plasma, the volume flow of Cl is 1200sccm.Therefore, the conversion amount of the Cl of the every 500mm in limit of substrate is 250sccm.On the other hand, as the H that catches gas
2gas is 50～100sccm, and therefore, in the time of their complete dissociations, H is 100～200sccm.In the time being scaled the ratio of atomic weight, the scope that H atomic weight is 40～80% with respect to Cl atomic weight.
In above-mentioned experimental example, be scaled by processing gas flow the atom flow of supplying with to every limit of substrate, calculate the gas flow of catching of relative needs.In fact, catch gas supply area and be arranged on around substrate, therefore, what need catches gas flow and can relatively define with respect to processing gas input amount.
Can be confirmed by above content: by supplying with as catching the H of gas
2gas, the scope that the H atomic weight that makes unit interval supply is 17～80% with respect to the ratio of the atomic weight of F, Cl in processing gas, O, the control of the etch-rate to substrate periphery portion has effect.
(experimental example 2)
Then, the result of utilizing the plasma-etching apparatus of the capacitive coupling type with the structure same with Fig. 1 to carry out the experiment of imaginary actual treatment is described.Substrate size is 730 × 920mm, catches gas and around supplies with to substrate.
At this, carry out imaginary LTPS(low temperature polycrystalline silicon) experiment of contact etch.Low temperature polycrystalline silicon contact etch, be to as shown in figure 12 at polysilicon (p-Si) film 101 superimposed layer SiO
2film 102, SiN
xfilm 103, SiO
2film 104 and form laminated construction carry out etching, in the past, in the etching of polysilicon layer, became the high etch profile of etch-rate of peripheral part, caused, at substrate peripheral part, the etched problem of polysilicon film easily occurs.Therefore, in this experimental example, for SiO
2film, SiN
xthe a-Si film of the equal etching characteristic of film and demonstration and polysilicon film is being supplied with H from shower nozzle together with other gas
2the situation of gas and supply with H to the periphery of substrate
2gas, as catching in the situation of gas, carries out etching under condition shown below.
Etching condition
Pressure: 10mTorr
Source power: 5000W
Substrate bias power: 5000W
Process gas and flow (shower nozzle):
C
4F
8?60sccm
Ar?100sccm
H
2?100sccm、0sccm
Catch gas (H
2gas) flow (substrate periphery portion): 0sccm, 100sccm
In addition, to catch the atomic weight of the H of gas be 41.7% with respect to the ratio of the atomic weight of the F as spike to the conduct in this situation.
The distribution of the etch-rate (etch quantity) during by the etching of these films is shown in Figure 13～15.Figure 13,14 is respectively SiO
2film and SiN
xthe result of film is all no matter to have the undirected substrate periphery supply H of portion
2gas, the inner evenness of etch-rate is all good.On the other hand, Figure 15 is the result of a-Si film, is not supplying with H to substrate periphery portion
2in the situation of gas, the etch-rate of substrate peripheral part rises, and the inner evenness of etch-rate is 44%, but by supplying with H to substrate periphery portion
2gas, uniformity is significantly improved to 10%.
Thus, can confirm: by supplying with H to substrate periphery portion
2gas is as catching gas, to SiO
2film and SiN
xthe etching of film does not almost affect, and only the high a-Si film of etch-rate strong to chemical reactivity, substrate peripheral part can improve etch profile.Therefore, this method can be described as at LTPS(low temperature polycrystalline silicon) in contact etch, in the etched very effective method of the incidental polysilicon film of substrate peripheral part.
(experimental example 3)
Then, illustrate and utilize except supplying with as the H that catches gas
2the gas supply nozzle of catching of gas is arranged on beyond the side of shading ring as shown in Figure 4, has the plasma-etching apparatus of the inductance coupling high type of the structure same with Fig. 6, carries out etched result.Substrate size is 1850 × 1500mm.
In experimental example, also carry out imaginary LTPS(low temperature polycrystalline silicon) experiment of contact etch.Specifically, as processing gas, use C
2hF
5gas, H
2gas, Ar gas, investigation is by the H as catching gas
2gas have or not the SiO causing
2the etch profile of film and Si film.
The results are shown in Figure 16.Figure 16 represents the etch-rate of 1/4 part of substrate, the center that C is substrate, LC Wei Changbian center, the center that SC is minor face, the angle that Edge is substrate.Figure 16 (a) is that processing gas is C
2hF
5: 300sccm, H
2: 180sccm, Ar:240sccm, do not use and catch gas and carry out etched result.Figure 16 (b), (c) are by H
2: 180sccm removes from process gas, and makes its result that gas jetting nozzle flows out of catching from substrate periphery portion.In addition, to catch the atomic weight of the H of gas be 24% and 72% with respect to the ratio of the atomic weight of the F as spike to the conduct in the situation of Figure 16 (b), (c).
As shown in Figure 16 (a), do not supplying with as catching the H of gas to substrate periphery portion
2in the situation of gas, SiO
2the etch profile of film is more uniform, and the in the situation that of Si film, the etch-rate of substrate peripheral part is high.On the other hand, by the H comprising in the processing gas of Figure 16 (a)
2gas is as catching in Figure 16 (b), (c) that gas supplies with to substrate periphery portion, and the etch profile of Si film improves, and can not upset SiO
2the etch profile of film.In addition, can confirm: with the H to substrate periphery portion
2the flow of gas is that 180sccm's the situation of (b) is compared, and the effect of the situation of (c) that flow is 540sccm is larger.
In addition, the stack membrane that comprises the etch target film that chemical reactivity is high etc. is being carried out in etched situation, only also can utilize and in the etching step of film that need to carry out the control of the etch-rate of substrate peripheral part, to supply with the scheme of catching gas and carry out etching.
In addition, the present invention is not limited to above-mentioned execution mode, can carry out various distortion.For example, in the above-described embodiment, being illustrated as an example of plasma etching example as plasma treatment, but be not limited to plasma etching, can be also other the plasma treatment such as plasma CVD.
In addition, in the above-described embodiment, exemplified with the plasma processing apparatus of capacitive coupling type and inductance coupling high, but be not limited to this, as long as can generate plasma in chamber, also can otherwise generate for microwave plasma etc. the device of plasma.
And, as catching gas, be not limited to H
2gas, the gas of being caught as long as reacting with free radical isoreactivity kind.Etch target film is also not limited to the film of above-mentioned execution mode.
In addition, in the above-described embodiment, the example that applies the present invention to the glass substrate that FPD uses is illustrated, but is not limited to this, also can apply the present invention to other the substrate such as semiconductor substrate, this is self-evident.
Claims (18)
1. a plasma processing apparatus, it implements plasma treatment to substrate, and described plasma processing apparatus is characterised in that to possess:
The container handling of be used for accommodating substrate, this substrate being implemented to plasma treatment;
In described container handling, load the substrate-placing platform of substrate;
To supplying with the processing gas supply mechanism of processing gas in described container handling;
To carrying out the exhaust gear of exhaust in described container handling;
In described container handling, generate the plasma generation unit of the plasma of described processing gas; With
Periphery to the substrate on described substrate-placing platform is supplied with the gas supply mechanism of catching of catching gas, and this catches the spike in plasma described in gas entrapment.
2. plasma processing apparatus as claimed in claim 1, is characterized in that:
Described plasma treatment is plasma etch process.
3. plasma processing apparatus as claimed in claim 2, is characterized in that:
Described processing gas is at least one the gas comprising in F, Cl and O, described in to catch gas be hydrogen.
4. plasma processing apparatus as claimed in claim 2 or claim 3, is characterized in that:
The ratio of the atomicity of described atomicity of catching gas to the spike in described processing gas is 17～80%.
5. the plasma processing apparatus as described in claim 3 or 4, is characterized in that:
The etch target of described plasma etch process is Si film, the SiN being formed on substrate
xany one in film and Al film.
6. plasma processing apparatus as claimed in claim 5, is characterized in that:
In the situation that etch target is Si film, use F as spike, described in catch gas the ratio of the atomicity of atomicity to the spike in described processing gas be 40～80%.
7. plasma processing apparatus as claimed in claim 5, is characterized in that:
Be SiN at etch target
xin the situation of film, use F and O as spike, described in catch gas the ratio of the atomicity of atomicity to the spike in described processing gas be 17.1～34.3%.
8. plasma processing apparatus as claimed in claim 5, is characterized in that:
In the situation that etch target is Al film, use Cl as spike, described in catch gas the ratio of the atomicity of atomicity to the spike in described processing gas be 40～80%.
9. the plasma processing apparatus as described in any one in claim 1 to 8, is characterized in that:
Describedly catch substrate that gas supply mechanism is arranged at described substrate-placing platform around.
10. the plasma processing apparatus as described in any one in claim 1 to 8, is characterized in that:
Described processing gas supply mechanism has in described container handling to the substrate on described substrate-placing platform supplies with the shower nozzle of processing gas with shape spray, described in catch gas supply mechanism and be arranged on described shower nozzle around.
Substrate is implemented to the method for plasma processing of plasma treatment, be it is characterized in that for 11. 1 kinds:
Substrate-placing platform in container handling is placed with under the state of substrate, process gas to supplying with in container handling, the plasma that generates processing gas in described container handling carries out plasma treatment to substrate, now, the periphery of substrate is supplied with the gas of catching of the spike of catching in described plasma.
12. method of plasma processing as claimed in claim 11, is characterized in that:
Described plasma treatment is plasma etch process.
13. method of plasma processing as claimed in claim 12, is characterized in that:
Described processing gas is at least one the gas comprising in F, Cl and O, described in to catch gas be hydrogen.
14. method of plasma processing as described in claim 12 or 13, is characterized in that:
The ratio of the atomicity of described atomicity of catching gas to the spike in described processing gas is 17～80%.
15. method of plasma processing as described in claim 13 or 14, is characterized in that:
The etch target of described plasma etch process is Si film, the SiN being formed on substrate
xany one in film and Al film.
16. method of plasma processing as claimed in claim 15, is characterized in that:
In the situation that etch target is Si film, use F as spike, described in catch gas the ratio of the atomicity of atomicity to the spike in described processing gas be 40～80%.
17. method of plasma processing as claimed in claim 15, is characterized in that:
Be SiN at etch target
xin the situation of film, use F and O as spike, described in catch gas the ratio of the atomicity of atomicity to the spike in described processing gas be 17.1～34.3%.
18. method of plasma processing as claimed in claim 15, is characterized in that:
In the situation that etch target is Al film, use Cl as spike, described in catch gas the ratio of the atomicity of atomicity to the spike in described processing gas be 40～80%.
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| CN105282953A (en) * | 2014-07-08 | 2016-01-27 | Psk有限公司 | Apparatus For Generating Plasma Using Dual Plasma Source And Apparatus For Treating Substrate Including The Same |
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| CN111599717B (en) | 2020-05-09 | 2024-03-26 | 北京北方华创微电子装备有限公司 | Semiconductor reaction chamber and atomic layer plasma etching machine |
| KR102587571B1 (en) * | 2020-11-10 | 2023-10-10 | 세메스 주식회사 | Apparatus and method for treating surface of component |
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| JPH10147893A (en) * | 1996-11-18 | 1998-06-02 | Speedfam Co Ltd | Plasma etching method and system therefor |
| JP2003243364A (en) * | 2002-02-15 | 2003-08-29 | Seiko Epson Corp | Rectifying wall, dry etching apparatus, and manufacturing method for electrooptical apparatus using the same |
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| CN1490849A (en) * | 2002-09-06 | 2004-04-21 | ���������ƴ���ʽ���� | Si etching method and device |
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| JP2625072B2 (en) * | 1992-09-08 | 1997-06-25 | アプライド マテリアルズ インコーポレイテッド | Plasma reactor using electromagnetic RF coupling and method thereof |
| US6313042B1 (en) * | 1999-09-03 | 2001-11-06 | Applied Materials, Inc. | Cleaning contact with successive fluorine and hydrogen plasmas |
| JP2002045683A (en) * | 2000-08-08 | 2002-02-12 | Hitachi Kokusai Electric Inc | Substrate processing device |
| JP2006344701A (en) * | 2005-06-08 | 2006-12-21 | Matsushita Electric Ind Co Ltd | Etching device and etching method |
| JP2008016479A (en) * | 2006-07-03 | 2008-01-24 | Philtech Inc | Manufacturing method of semiconductor device |
-
2012
- 2012-11-27 JP JP2012259050A patent/JP6017936B2/en active Active
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2013
- 2013-11-18 KR KR1020130139543A patent/KR102011522B1/en active IP Right Grant
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10147893A (en) * | 1996-11-18 | 1998-06-02 | Speedfam Co Ltd | Plasma etching method and system therefor |
| JP2006336114A (en) * | 1999-12-10 | 2006-12-14 | Tokyo Electron Ltd | Processing apparatus |
| CN1478291A (en) * | 2000-09-28 | 2004-02-25 | ��ķ�о�����˾ | Chamber configuration for confining plasma |
| JP2003243364A (en) * | 2002-02-15 | 2003-08-29 | Seiko Epson Corp | Rectifying wall, dry etching apparatus, and manufacturing method for electrooptical apparatus using the same |
| CN1490849A (en) * | 2002-09-06 | 2004-04-21 | ���������ƴ���ʽ���� | Si etching method and device |
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| CN105282953A (en) * | 2014-07-08 | 2016-01-27 | Psk有限公司 | Apparatus For Generating Plasma Using Dual Plasma Source And Apparatus For Treating Substrate Including The Same |
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| CN103839748B (en) | 2017-04-05 |
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| KR102011522B1 (en) | 2019-08-16 |
| JP2014107405A (en) | 2014-06-09 |
| JP6017936B2 (en) | 2016-11-02 |
| TW201435963A (en) | 2014-09-16 |
| TWI608516B (en) | 2017-12-11 |
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