TWI409907B - Substrate placement mechanism and substrate transfer method - Google Patents
Substrate placement mechanism and substrate transfer method Download PDFInfo
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- TWI409907B TWI409907B TW096132291A TW96132291A TWI409907B TW I409907 B TWI409907 B TW I409907B TW 096132291 A TW096132291 A TW 096132291A TW 96132291 A TW96132291 A TW 96132291A TW I409907 B TWI409907 B TW I409907B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
- B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
- B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
- B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
- B65G49/061—Lifting, gripping, or carrying means, for one or more sheets forming independent means of transport, e.g. suction cups, transport frames
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
本發明是關於藉由對載置台之載置面伸縮之升降銷，支撐平面顯示器(FPD)用玻璃基板等之具有可撓性的被處理基板，而在執行交接載置台之上方之基板的交接位置，和被載置於載置台之載置位置之間予以升降之基板載置機構及基板交接方法。The present invention relates to a flexible substrate to be processed by a glass substrate such as a flat panel display (FPD) by a lift pin that expands and contracts the mounting surface of the mounting table, and the substrate is transferred over the transfer mounting table. A substrate mounting mechanism and a substrate transfer method for moving up and down between the mounting positions of the mounting table.
在FPD之製程中，對屬於被處理基板之FPD用之玻璃基板，施予乾蝕刻或濺鍍、CVD(化學氣相澱積)等之各種處理。如此之處理通常是在於被設置在腔室內之載置台載置玻璃基板之狀態下執行，基板對載置台之負載及卸載一般是藉由設置成可對載置台之載置面伸縮之多數升降銷而執行。於負載基板時，使升降銷上昇自載置台之載置面突出，將藉由搬運手臂等之搬運構件所搬運之基板轉移至升降銷之後，使升降銷下降而縮入載置台之載置面。再者，於卸載基板時，使升降銷上昇而自載置台之載置面突出，使基板自載置台離開之後，將升降銷上之基板轉移至搬運構件。In the process of the FPD, various treatments such as dry etching, sputtering, and CVD (Chemical Vapor Deposition) are applied to the glass substrate for the FPD belonging to the substrate to be processed. Such a process is generally performed in a state in which a mounting substrate placed in a chamber is placed on a glass substrate, and loading and unloading of the substrate to the mounting table is generally performed by a plurality of lifting pins that are expandable and contractible to the mounting surface of the mounting table. And executed. When the substrate is loaded, the lift pin is raised from the mounting surface of the mounting table, and the substrate conveyed by the transport member such as the transport arm is transferred to the lift pin, and then the lift pin is lowered and retracted into the mounting surface of the mount. . Further, when the substrate is unloaded, the lift pins are raised and protruded from the mounting surface of the mounting table, and after the substrate is separated from the mounting table, the substrate on the lift pins is transferred to the transport member.
升降銷雖然考慮對處理品質之影響以設置在玻璃基板之邊緣部位置為佳，但是近來以FPD之大型化為指向，出現一邊超過2m之巨大玻璃基板，僅以邊緣部位置之升降銷要支撐如此巨大之玻璃基板則有困難。Although it is preferable to set the position of the edge of the glass substrate in consideration of the influence on the processing quality, the large-sized glass substrate of more than 2 m is present in the recent direction of the FPD, and only the lifting pin of the edge portion is supported. Such a huge glass substrate is difficult.
因此，於玻璃基板為大型時，在中央部位置也設置升降銷，使可以確實支撐玻璃基板(例如參照專利文獻1)，但是如上述般，當考慮對處理品質之影響時，則不得不將設置在玻璃基板之中央部位置之升降銷限制成少數。其結果，如第9圖(a)所示般，當藉由邊緣部位置及中央部位置之升降銷B、C支撐玻璃基板A時，玻璃基板A則變形彎曲成升降銷B、C間部份凹陷，中央部隆起，如第9圖(b)所示般，於玻璃基板A被載置於載置台D時，則有變形之玻璃基板A之中央部自載置台D浮起之虞。載置台具有調整處理時之玻璃基板溫度之調溫功能之情形為多，例如電漿蝕刻裝置中，載置台因發揮冷卻電漿蝕刻蝕之玻璃基板之作用，故當玻璃基板之一部份自載置台浮起時，玻璃基板之溫度在面內不均勻成為處理不均勻，例如蝕刻部均勻之發生主因。Therefore, when the glass substrate is large, a lift pin is provided at the center portion, so that the glass substrate can be reliably supported (for example, see Patent Document 1). However, when considering the influence on the processing quality, it is necessary to The lift pins provided at the central portion of the glass substrate are limited to a small number. As a result, as shown in Fig. 9(a), when the glass substrate A is supported by the lift pins B and C at the edge portion position and the central portion position, the glass substrate A is deformed and bent into the lift pins B and C. When the glass substrate A is placed on the mounting table D as shown in FIG. 9(b), the central portion of the deformed glass substrate A floats from the mounting table D. There is a case where the mounting table has a temperature adjustment function for adjusting the temperature of the glass substrate during processing. For example, in the plasma etching apparatus, the mounting stage functions as a glass substrate for cooling plasma etching, so that a part of the glass substrate is self-contained. When the mounting table is floated, the temperature of the glass substrate is uneven in the surface, and the processing is uneven. For example, the etching portion is uniform.
〔專利文獻1〕日本特開2002－246450號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2002-246450
本發明是鑒於如此之事情而所創作出者，其目的為提供一種即使被處理基板為大型，亦可以藉由升降銷確實支撐被處理基板並且有效果抑制被處理基板之變形的基板處理裝置，以及基板交接方法、具備有如此基板載置機構之基板處理裝置，以及記憶有用以實行如此基板交接方法之控制程式的電腦可讀取之記憶媒體。The present invention has been made in view of such circumstances, and an object thereof is to provide a substrate processing apparatus capable of reliably supporting a substrate to be processed by a lift pin even if the substrate to be processed is large, and having an effect of suppressing deformation of the substrate to be processed. And a substrate transfer method, a substrate processing apparatus including the substrate mounting mechanism, and a computer readable memory medium for storing a control program for performing the substrate transfer method.
為了解決上述課題，本發明之第1觀點是提供一種基板載置機構，具備有載置台，用以載置具有可撓性之被處理基板；多數升降銷，被設置成對上述載置台之載置面伸縮自如，支撐被處理基板而在執行交接上述載置台之上方之基板的交接位置和上述載置台上之載置位置之間予以升降；和驅動機構，用以驅動上述升降銷，其特徵為：上述多數升降銷具有支撐被處理基板之邊緣部之第1升降銷，和支撐被處理基板之中央部的第2升降銷，上述驅動機構是於升降被處理基板時，使上述第1升降銷比上述第2升降銷突出更高，在被處理基板下方彎曲成凸狀之狀態下安定地被支撐。In order to solve the above problems, a first aspect of the present invention provides a substrate mounting mechanism including a mounting table for mounting a flexible substrate to be processed, and a plurality of lifting pins provided for mounting on the mounting table The surface is stretchable and contractible, supports the substrate to be processed, and is lifted and lowered between the transfer position of the substrate above the transfer table and the mounting position on the mounting table; and a driving mechanism for driving the lift pin. The plurality of lift pins have a first lift pin that supports an edge portion of the substrate to be processed, and a second lift pin that supports a central portion of the substrate to be processed, and the drive mechanism is configured to lift the substrate to be processed to raise the first lift The pin protrudes higher than the second lift pin, and is stably supported in a state where the substrate to be processed is bent downward.
本發明之第1觀點中，上述驅動機構能夠獨立使上述第1升降銷和上述第2升降銷驅動為佳。In the first aspect of the invention, the drive mechanism can drive the first lift pin and the second lift pin independently.
再者，以上之本發明之第1觀點中，是以具備用以控制由於上述驅動部所產生之上述第1及第2升降銷之驅動的控制部，上述控制部是在使上述載置位置之被處理基板朝向上述交接位置上升之途中，於被處理基板保持與上述載置台接觸而下方彎曲成凸狀之狀態時，暫時使朝向上述第1及第2升降銷之突出方向的驅動停止為佳。或是，以具備用以控制由於上述驅動部所產生之上述第1及第2升降銷之驅動的控制部，上述控制部是在使上述載置位置之被處理基板朝向上述交接位置上升之途中，於被處理基板保持與上述載置台接觸，下方彎曲成凸狀之狀態時，暫時使朝向上述第1及第2升降銷之突出方向的驅動停止，於再次開啟該驅動而使被處理基板自上述載置台離開之後，使上述第1及第2升降銷往縮入方向驅動，於被處理基板下方彎曲成凸狀而接觸於上述載置台之狀態時，停止該驅動，之後，使上述第1及第2升降銷再次往突出方向驅動為佳。Further, in the first aspect of the present invention, the control unit includes a control unit for controlling driving of the first and second lift pins generated by the drive unit, and the control unit is configured to move the position When the substrate to be processed is held in contact with the mounting table and is bent downward in a convex shape while the substrate to be processed is being lifted toward the transfer position, the driving in the protruding direction of the first and second lift pins is temporarily stopped. good. Or a control unit for controlling driving of the first and second lift pins generated by the drive unit, wherein the control unit is on the way to raise the substrate to be processed at the placement position toward the transfer position When the substrate to be processed is held in contact with the mounting table and is bent downward in a convex shape, the driving in the protruding direction of the first and second lift pins is temporarily stopped, and the driving is performed again to open the substrate to be processed. After the mounting table is separated, the first and second lift pins are driven in the retracting direction, and when the substrate under the substrate is bent into a convex shape and is in contact with the mounting table, the driving is stopped, and then the first step is performed. And the second lift pin is preferably driven in the protruding direction again.
又，以上之本發明之第1觀點中，上述第1及第2升降銷是構成將藉由搬運構件從下方被支撐而被搬運至上述交接位置的被處理基板予以交接，上述控制部是在上述第1及第2升降銷朝向上述交接位置而往突出方向驅動之途中，於被處理基板保持與上述搬運構件接觸而於下方彎曲成凸狀之狀態時，暫時停止朝向上述第1及第2升降銷之突出方向的驅動為佳。或是，上述第1及第2升降銷是構成將藉由搬運構件從下方被支撐而被搬運至上述交接位置的被處理基板予以交接，上述控制部是在上述第1及第2升降銷朝向上述交接位置而往突出方向驅動之途中，於被處理基板保持與上述搬運構件接觸而於下方彎曲成凸狀之狀態時，暫時停止朝向上述第1及第2升降銷之突出方向的驅動，再次開啟該驅動而使被處理基板自上述搬運構件離開之後，使上述第1及第2升降銷往縮入方向驅動，於被處理基板下方彎曲成凸狀而接觸於上述搬運構件之狀態時，停止該驅動，之後，使上述第1及第2升降銷再次往突出方向驅動為佳。Further, in the first aspect of the present invention, the first and second lift pins are configured to be transferred to a substrate to be processed which is transported from below by the transport member to the transfer position, and the control unit is When the first and second lift pins are driven in the projecting direction toward the transfer position, the substrate to be processed is temporarily closed to the first and second sides while being held in contact with the transport member and bent downward in a convex shape. The driving of the protruding pin in the protruding direction is preferred. Alternatively, the first and second lift pins are configured to be transferred to a substrate to be processed which is transported from below by the transport member to the transfer position, and the control unit is oriented at the first and second lift pins. When the substrate to be processed is held in contact with the conveyance member and is bent downward in a convex shape while being conveyed in the protruding direction, the driving toward the protruding direction of the first and second lift pins is temporarily stopped, and again After the drive is opened and the substrate to be processed is separated from the conveyance member, the first and second lift pins are driven in the retracting direction, and when the substrate under the substrate is bent into a convex shape and is in contact with the conveyance member, the operation is stopped. After the driving, the first and second lift pins are preferably driven in the protruding direction again.
再者，本發明之第2觀點是提供一種基板處理裝置，其特徵為：具備處理容器，用以收容被處理基板；基板載置機構，被設置在上述處理容器內，具有載置被處理基板之載置台；和處理機構，對被載置於上述載置台之被處理基板施予特定處理，上述基板載置機構具有上述第1觀點所記載之構成。According to a second aspect of the present invention, there is provided a substrate processing apparatus comprising: a processing container for accommodating a substrate to be processed; and a substrate mounting mechanism provided in the processing container and having a substrate to be processed And a processing unit that performs a specific process on the substrate to be processed placed on the mounting table, wherein the substrate mounting mechanism has the configuration described in the first aspect.
在本發明之第2觀點中，上述處理機構具有將處理氣體供給至上述處理容器內之氣體供給機構，和將上述處理容器內予以排氣之排氣機構，和在上述處理容器內生成上述處理氣體之電漿的電漿生成機構，對被處理基板施予電漿處理為佳。According to a second aspect of the present invention, the processing device includes a gas supply mechanism that supplies a processing gas into the processing container, and an exhaust mechanism that exhausts the processing container, and generates the processing in the processing container. It is preferable that the plasma generating mechanism of the plasma of the gas is subjected to plasma treatment of the substrate to be processed.
再者，本發明之第3觀點是提供一種基板交接方法，藉由對載置具有可撓性之被處理基板之載置台的載置面伸縮的多數升降銷，支撐被處理基板而在執行交接上述載置台之上方之基板的交接位置和上述載置台上之載置位置之間予以升降，其特徵為：由支撐被處理基板之邊緣部之第1升降銷，和支撐被處理基板之中央部的第2升降銷構成上述多數升降銷，於使被處理基板升降時，使上述第1升降銷突出比上述第2升降銷更高，在被處理基板下方彎曲成凸狀之狀態下安定地被支撐。Furthermore, a third aspect of the present invention provides a substrate transfer method for supporting a substrate to be processed by performing a transfer of a plurality of lift pins that expand and contract on a mounting surface on which a substrate for a substrate to be processed is placed. A lifting and lowering position of the substrate above the mounting table and a mounting position on the mounting table are characterized by: a first lifting pin supporting the edge portion of the substrate to be processed, and a central portion supporting the substrate to be processed The second lift pin constitutes the plurality of lift pins, and when the substrate to be processed is moved up and down, the first lift pin is protruded higher than the second lift pin, and is stably placed in a convex state below the substrate to be processed. support.
本發明之第3觀點中，可以在上述第1及第2升降銷各設置檢測被處理基板之荷重的荷重檢測部，根據上述各荷重檢測部之檢測結果，調整上述第1升降銷和上述第2升降銷之突出高度之差。According to a third aspect of the present invention, the load detecting unit that detects the load of the substrate to be processed is provided in each of the first and second lift pins, and the first lift pin and the first portion are adjusted based on the detection results of the load detecting units. 2 The difference between the protruding height of the lifting pin.
再者，以上之本發明之第3觀點中，以在使上述載置位置之被處理基板朝向上述交接位置而上昇之途中，於被處理基板保持與上述載置台接觸而於下方彎曲成凸狀之狀態時，暫時停止朝向上述第1及第2升降銷之突出方向的驅動為佳。或是，在使上述載置位置之被處理基板朝向上述交接位置而上昇之途中，於被處理基板保持與上述載置台接觸而於下方彎曲成凸狀之狀態時，暫時停止朝向上述第1及第2升降銷之突出方向的驅動，再次開啟該驅動而使被處理基板自上述載置台離開之後，使上述第1及第2升降銷往縮入方向驅動，於被處理基板下方彎曲成凸狀而接觸於上述載置台之狀態時，停止該驅動，之後，使上述第1及第2升降銷再次往突出方向驅動為佳。Furthermore, in the third aspect of the present invention, the substrate to be processed is held in contact with the mounting table and curved downward in a convex shape while the substrate to be processed at the mounting position is raised toward the transfer position. In the state of the first, it is preferable to temporarily stop the driving in the protruding direction of the first and second lift pins. Or, when the substrate to be processed is brought into contact with the mounting table and is bent downward in a convex shape while the substrate to be processed is raised toward the transfer position, the substrate is temporarily stopped toward the first and After the drive of the second lift pin in the protruding direction is turned on again, the substrate to be processed is separated from the mounting table, and the first and second lift pins are driven in the retracting direction, and are bent into a convex shape under the substrate to be processed. When the state is contacted with the mounting table, the driving is stopped, and then the first and second lifting pins are preferably driven in the protruding direction again.
又，在以上之本發明之第3觀點中，將上述第1及第2升降銷構成將藉由搬運構件從下方被支撐而被搬運至上述交接位置的被處理基板予以交接，在上述第1及第2升降銷朝向上述交接位置而往突出方向驅動之途中，於被處理基板保持與上述搬運構件接觸而於下方彎曲成凸狀之狀態時，暫時停止朝向上述第1及第2升降銷之突出方向的驅動為佳。或是，將上述第1及第2升降銷構成將藉由搬運構件從下方被支撐而被搬運至上述交接位置的被處理基板予以交接，在上述第1及第2升降銷朝向上述交接位置而往突出方向驅動之途中，於被處理基板保持與上述搬運構件接觸而於下方彎曲成凸狀之狀態時，暫時停止朝向上述第1及第2升降銷之突出方向的驅動，再次開啟該驅動而使被處理基板自上述搬運構件離開之後，使上述第1及第2升降銷往縮入方向驅動，於被處理基板下方彎曲成凸狀而接觸於上述搬運構件之狀態時，停止該驅動，之後，使上述第1及第2升降銷再次往突出方向驅動為佳。Further, in the third aspect of the present invention, the first and second lift pins are configured to be transferred to a substrate to be processed which is transported from below by the transport member to the transfer position, and the first When the second lifting pin is driven in the protruding direction toward the delivery position, the substrate to be processed is held in contact with the conveying member and bent downward in a convex shape, and the first and second lifting pins are temporarily stopped. The driving in the protruding direction is better. Alternatively, the first and second lift pins are configured to be transferred to a substrate to be processed which is transported from below by the transport member to the transfer position, and the first and second lift pins are oriented toward the transfer position. When the substrate to be processed is held in contact with the conveyance member and is bent downward in a convex shape while being driven in the projecting direction, the driving toward the protruding direction of the first and second lift pins is temporarily stopped, and the drive is again turned on. After the substrate to be processed is separated from the transport member, the first and second lift pins are driven in the retracting direction, and when the substrate under the substrate is bent into a convex shape and is in contact with the transport member, the drive is stopped. It is preferable that the first and second lift pins are driven in the protruding direction again.
又，本發明之第4觀點是提供一種電腦可讀取之記憶媒體，為記憶有在電腦上動作之控制程式，其特徵為：上述控制程式於實行時以執行上述之基板交接方法的方式，使電腦控制處理裝置。Furthermore, a fourth aspect of the present invention provides a computer readable memory medium for storing a control program for operating on a computer, wherein the control program is executed to execute the substrate transfer method described above. Let the computer control the processing device.
若藉由本發明，因由支撐被處理基板之邊緣部之第1升降銷，和支撐被處理基板之中央部的第2升降銷構成多數升降銷，於使被處理基板升降時，使上述第1升降銷突出比上述第2升降銷更高，在被處理基板下方彎曲成凸狀之狀態下安定地被支撐，故即使被處理基板為大型，亦可以藉由第1及第2升降銷確實之稱被處理基板，並且可以有效果抑制因第1及第2升降銷間部份之自重所產生之彎曲以及第2升降銷之支撐作用力所引起之被處理基板之變形。因此，可抑制被處理基板對載置台之浮起而抑止處理不均勻的發生。According to the invention, the first lift pin of the edge portion supporting the substrate to be processed and the second lift pin supporting the central portion of the substrate to be processed constitute a plurality of lift pins, and when the substrate to be processed is moved up and down, the first lift is performed. The pin protrusion is higher than the second lift pin, and is stably supported in a state where the substrate to be processed is bent downward. Therefore, even if the substrate to be processed is large, the first and second lift pins can be called The substrate to be processed has an effect of suppressing the deformation of the substrate to be processed due to the bending of the self-weight between the first and second lift pins and the supporting force of the second lift pins. Therefore, it is possible to suppress the occurrence of unevenness in processing by suppressing the floating of the substrate to be processed by the substrate to be processed.
以下，參照附件圖面針對本發明之實施形態予以說明。Hereinafter, embodiments of the present invention will be described with reference to the attached drawings.
第1圖為具備有本發明所涉及之基板載置機構之基板處理裝置之一實施形態的電漿蝕刻裝置之側面方向之概略剖面圖，第2圖為該平面方向之概略剖面圖。1 is a schematic cross-sectional view of a plasma etching apparatus according to an embodiment of a substrate processing apparatus including a substrate mounting mechanism according to the present invention, and FIG. 2 is a schematic cross-sectional view in the planar direction.
該電漿蝕刻裝置1是當作對FPD用之玻璃基板(幾下單稱為「基板」)G執行蝕刻之電容耦合型平行平板電漿蝕刻裝置而構成。FPD可例示出液晶顯示器(LCD)、電激發光裝置(Electro Luminescence；EL)顯示器、電漿顯示面板(PDP)等。電漿蝕刻裝置1具備有當作收容基板G之處理容器的腔室2。腔室2是由例如表面被耐酸鋁處理(陽極氧化處理)之鋁所構成，對應於基板G之形狀而形成四角筒形狀。This plasma etching apparatus 1 is constituted by a capacitive coupling type parallel plate plasma etching apparatus which performs etching on a glass substrate (hereinafter referred to as "substrate") G for FPD. The FPD can be exemplified by a liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display panel (PDP), and the like. The plasma etching apparatus 1 is provided with a chamber 2 as a processing container for accommodating the substrate G. The chamber 2 is made of, for example, aluminum whose surface is treated with an alumite treatment (anodizing treatment), and forms a rectangular tube shape corresponding to the shape of the substrate G.
在腔室2內之底壁形成有當作載置基板G之載置台的承載器4。承載器4是對應於基板G之形狀被形成四角板狀或是柱狀，具有由金屬等之導電性材料所構成之基材4a，和由覆蓋基材4a之邊緣的絕緣材料所構成之絕緣構件4b，和設置成覆蓋基材4a及絕緣構件4b而支撐該些之由絕緣材料所構成之絕緣構件4c。基材4a連接有用以供給高頻電力之供電線23，於該供電線23連接有整合器24及高頻電源25。自高頻電源25施加例如13.56MHz之高頻電力至承載器4，依此承載器4構成當作下部電極而發揮功能。再者，承載器4內藏有用以吸附載置之基板G之無圖式之靜電吸附機構。A carrier 4 serving as a mounting table on which the substrate G is placed is formed on the bottom wall in the chamber 2. The carrier 4 is formed in a square plate shape or a column shape corresponding to the shape of the substrate G, and has a base material 4a made of a conductive material such as metal, and an insulating material made of an insulating material covering the edge of the base material 4a. The member 4b is provided to cover the base material 4a and the insulating member 4b to support the insulating member 4c composed of an insulating material. The base material 4a is connected to a power supply line 23 for supplying high-frequency power, and an integrator 24 and a high-frequency power source 25 are connected to the power supply line 23. A high-frequency power of, for example, 13.56 MHz is applied from the high-frequency power source 25 to the carrier 4, whereby the carrier 4 functions as a lower electrode. Further, the carrier 4 contains a non-drawing electrostatic adsorption mechanism for adsorbing the mounted substrate G.
在腔室2之上部或是上壁，是供給處理氣體至腔室2內並且以與承載器4對向之方式設置有當作上部電極而發 揮功能之噴淋頭11。噴淋頭11形成有使處理氣體擴散至內部之氣體擴散空間12，並且形成有將處理氣體吐出至下面或是承載器4之對向面的多數吐出孔13。該噴淋頭11為接地，與承載器4構成一對平行平板電極。In the upper part or the upper wall of the chamber 2, the processing gas is supplied into the chamber 2 and is disposed opposite to the carrier 4 as the upper electrode. The sprinkler head 11 of the function. The shower head 11 is formed with a gas diffusion space 12 for diffusing the processing gas into the inside, and a plurality of discharge holes 13 for discharging the processing gas to the lower surface or the opposite surface of the carrier 4 are formed. The shower head 11 is grounded and forms a pair of parallel plate electrodes with the carrier 4.
在噴淋頭11之上面設置氣體導入口14，在該氣體導入口14連接有處理氣體供給管15，在該處理氣體管15經閥16及質量流量控制器17，連接有處理氣體供給源18。自處理氣體供給源18供給用以蝕刻之處理氣體。作為處理氣體可以使用鹵系氣體、O2 氣體、氬氣等、通常在該領域所使用之氣體。A gas introduction port 14 is provided on the upper surface of the shower head 11, and a process gas supply pipe 15 is connected to the gas introduction port 14, and a process gas supply source 18 is connected to the process gas pipe 15 via a valve 16 and a mass flow controller 17. . A process gas for etching is supplied from the process gas supply source 18. As the processing gas, a halogen gas, an O 2 gas, an argon gas or the like, which is usually used in the field, can be used.
腔室2之底壁連接有排氣管19，該排氣管19連接有排氣裝置20。排氣裝置20具備有渦輪分子泵等之真空泵，依此構成能夠將腔室2內抽真空至特定減壓環境。在腔室2之側壁形成有用以搬入搬出基板G之搬入出口21，並且設置有開關該搬入搬出口21之閘閥22，構成於搬入搬出口21之開放時，基板G藉由當作搬運構件之搬運手臂40(參照第2圖、第4圖之假想線)，在從下方支撐之狀態下在鄰接之無圖式的負載鎖定室之間被搬運。An exhaust pipe 19 is connected to the bottom wall of the chamber 2, and the exhaust pipe 19 is connected to the exhaust device 20. The exhaust device 20 is provided with a vacuum pump such as a turbo molecular pump, and accordingly, it is possible to evacuate the inside of the chamber 2 to a specific pressure reducing environment. A gate valve 22 for loading and unloading the substrate G is formed on the side wall of the chamber 2, and a gate valve 22 for opening and closing the loading/unloading port 21 is provided, and when the loading/unloading port 21 is opened, the substrate G is used as a conveying member. The transport arm 40 (refer to the imaginary line of FIG. 2 and FIG. 4) is transported between adjacent adjacent load lock chambers while being supported from below.
在承載器4之基板載置面形成有充填He氣體等之調溫氣體的無圖式冷卻空間，該調溫氣體是用以冷卻於電漿蝕刻處理時載置於承載器4而被吸附之基板G，以通過承載器4內貫通腔室2之底壁的方式，設置用以將調溫氣體供給至該冷卻空間之調溫氣體供給線41。於調溫氣體供給線41連接有調溫氣體供給源42，並且設置有用以調整調溫氣體之供給壓的壓力控制閥43。A non-pattern cooling space filled with a tempering gas such as He gas is formed on the substrate mounting surface of the carrier 4, and the tempering gas is used for cooling and being adsorbed on the carrier 4 during plasma etching treatment. The substrate G is provided with a temperature-regulating gas supply line 41 for supplying a temperature-regulating gas to the cooling space so as to pass through the bottom wall of the chamber 2 in the carrier 4. A temperature control gas supply source 42 is connected to the temperature control gas supply line 41, and a pressure control valve 43 for adjusting the supply pressure of the temperature control gas is provided.
腔室2之底壁及承載器4是於承載器4之邊緣部位置及中央部位置(比邊緣部位置內側或是靠中央位置)各形成有貫通該些之插通孔7a、7b。插通孔7a是在各邊部隔著特定間隔以兩處平均設置而形成合計8處，插通孔7b是例如以與承載器4之對向的一對之邊平行配列之方式，隔著特定間隔而形成兩處。插通孔7a、7b各自對承載器4之基板載置面能夠伸縮地插入自下方支撐基板G而升降之升降銷8a、8b(第1及第2升降銷)。升降銷8a、8b各被設置成於突出時扺接於基板G之邊緣部及中央部，藉由無圖示之定位用軸襯定位於徑方向或是寬度方向而插入至插通孔7a、7b內。The bottom wall of the chamber 2 and the carrier 4 are formed with the insertion holes 7a and 7b penetrating the edge portion and the center portion of the carrier 4 (inward or at the center of the edge portion). The insertion hole 7a is formed by arranging a total of eight places on each side portion at a predetermined interval, and the insertion hole 7b is arranged in parallel with a pair of sides facing the carrier 4, for example. Two places are formed at specific intervals. Each of the insertion holes 7a and 7b is inserted into the lift pins 8a and 8b (the first and second lift pins) which are lifted and lowered from the lower support substrate G to the substrate mounting surface of the carrier 4, respectively. Each of the lift pins 8a and 8b is provided so as to be connected to the edge portion and the center portion of the substrate G when protruding, and is inserted into the insertion hole 7a by positioning the bushing (not shown) in the radial direction or the width direction. Within 7b.
第3圖為基板載置機構之概略圖。Fig. 3 is a schematic view of a substrate mounting mechanism.
升降銷8a、8b各如第3圖所示般，下部突出於腔室2之外側，下端部連接於驅動部9a、9b，藉由該驅動部9a、9b之驅動而升降，依此構成對承載器4之基板載置面突出及縮入。驅動部9a9b各使用例如步進馬達而構成。As shown in Fig. 3, the lift pins 8a and 8b each protrude from the outer side of the chamber 2, and the lower end portion is connected to the drive portions 9a and 9b, and is driven up and down by the drive portions 9a and 9b, thereby forming a pair. The substrate mounting surface of the carrier 4 is protruded and retracted. Each of the drive units 9a9b is configured using, for example, a stepping motor.
升降銷8a、8b之下部各形成有突緣26，在各突緣26連接有設置成圍繞升降銷8a、8b之可伸縮之伸縮管27之一端部(下端部)，該伸縮管27之另一端部(上端部)連接於腔室2之底壁。依此，伸縮管27追隨於升降銷8a、8b之升降而伸縮，並且密封插通孔7a、7b和升降管8a、8b之間隙。A flange 26 is formed on each of the lower portions of the lift pins 8a and 8b, and one end (lower end portion) of the telescopic tube 27 that is disposed to surround the lift pins 8a and 8b is connected to each flange 26, and the extension tube 27 is another. One end portion (upper end portion) is connected to the bottom wall of the chamber 2. Accordingly, the bellows 27 expands and contracts following the lifting and lowering of the lift pins 8a, 8b, and seals the gap between the insertion holes 7a, 7b and the lift pipes 8a, 8b.
驅動部9a、9b之驅動為藉由具備微處理器(電腦)之控制器31而個別被控制之構成，依此，構成升降銷8a和升降銷8b可獨立升降。控制器31連接有工程管理者為了管理驅動部9a、9b之驅動執行指令之輸入操作等之鍵盤，或由將驅動部9a、9b之驅動狀況予以可視化而顯示之顯示器所構成之使用者介面32，和用以控制器31之控制實現驅動部9a、9b之驅動的控制程式，或儲存記錄有驅動條件資料等之處理程式的記憶部33。然後，因應所需，以來自使用者介面31之指示自任意處理程式叫出記憶部33而使控制器31實行，依此在控制器31之控制下執行驅動部9a、9b之驅動及停止。上述處理程式利用例如儲存於CD－ROM、硬碟、快閃記憶體等之電腦可讀取之記憶媒體之狀態者，或是亦可自其他裝置經例如專用回線隨時傳送或利用。The driving of the driving units 9a and 9b is individually controlled by a controller 31 having a microprocessor (computer), whereby the lifting pin 8a and the lifting pin 8b can be independently raised and lowered. The controller 31 is connected to a keyboard which is managed by the project manager to manage the driving operation of the driving units 9a and 9b, or a user interface 32 which is displayed by the display which visualizes the driving conditions of the driving units 9a and 9b. And a control program for driving the drive units 9a and 9b by the control of the controller 31, or a memory unit 33 for storing a processing program for recording the drive condition data. Then, if necessary, the controller 31 is called from the arbitrary processing program by the instruction from the user interface 31, and the controller 31 is executed, whereby the driving and stopping of the driving units 9a and 9b are performed under the control of the controller 31. The above processing program utilizes, for example, the state of a computer readable memory medium stored on a CD-ROM, a hard disk, a flash memory or the like, or can be transmitted or utilized at any time via other devices, for example, through a dedicated return line.
控制器31、使用者介面31及記憶部33及記憶部33是構成控制藉由驅動部9a、9b產生升降銷8a、8b升降之控制部，承載器4、升降銷8a、8b、驅動部9a、9b及控制部構成基板載置機構。The controller 31, the user interface 31, the memory unit 33, and the memory unit 33 constitute a control unit that controls the elevation of the lift pins 8a and 8b by the drive units 9a and 9b, and the carrier 4, the lift pins 8a and 8b, and the drive unit 9a. The 9b and the control unit constitute a substrate mounting mechanism.
如此構成之電漿蝕刻裝置1首先在藉由閘閥22開啟搬入搬出口21之狀態下，藉由搬運手臂40(第2圖、第4圖之假想線)將基板G搬入至搬入搬出口21而搬運至承載器4之上方時，則使各升降銷8a、8b上昇而突出至比搬運手臂40更高。並且，設置成各升降銷8a、8b和搬運手臂40互相不接觸。依此，基板G從搬運手臂40上被轉移至升降銷8a、8b上。此時，如上述般，以基板G之荷重分散至各升降銷8a、8b之方式，使升降銷8a位於比升降銷8b更高出特定量，在下方彎曲凸狀之狀態下藉由各升降銷8a、8b支撐基板G。搬運手臂40自搬入搬出口20退出至腔室2外，或藉由閘閥22關閉搬入搬出口21，並且，一面將升降銷8a保持比升降銷8b高出特定量之高度，一面使升降銷8a、8b下降。然後，以升降銷8b、升降交8a之順序使沉入至承載器4之載置面，將基板G載置在承載器4。基板G之荷重因均衡佳分散至各升降銷8a、8b，故基板G可以抑制因升降銷8a、8b之支撐反力所產生之變形，尤其因升降銷8b所產生之中央部之變形，可以在全面或是幾乎全面接觸於承載器4之載置面。In the plasma etching apparatus 1 configured as described above, the substrate G is carried into the loading/unloading port 21 by the transport arm 40 (the imaginary line of FIGS. 2 and 4) while the loading and unloading port 21 is opened by the gate valve 22. When transported to the upper side of the carrier 4, the lift pins 8a and 8b are raised to protrude higher than the transport arm 40. Further, it is provided that the lift pins 8a, 8b and the carrying arm 40 are not in contact with each other. Accordingly, the substrate G is transferred from the carrying arm 40 to the lift pins 8a, 8b. At this time, as described above, the lift pin 8a is positioned higher than the lift pin 8b by a specific amount so that the load of the substrate G is dispersed to the lift pins 8a and 8b, and is lifted and lowered in a state of being bent downward. The pins 8a, 8b support the substrate G. The transport arm 40 is retracted from the loading/unloading port 20 to the outside of the chamber 2, or the loading/unloading port 21 is closed by the gate valve 22, and the lift pin 8a is held at a height higher than the lift pin 8b by a specific amount, and the lift pin 8a is provided. , 8b dropped. Then, the lift pins 8b and the lift pins 8a are sunk to the mounting surface of the carrier 4, and the substrate G is placed on the carrier 4. Since the load of the substrate G is well dispersed to the respective lift pins 8a and 8b, the substrate G can suppress deformation caused by the supporting reaction force of the lift pins 8a and 8b, and particularly the deformation of the central portion due to the lift pins 8b. The mounting surface of the carrier 4 is fully or almost fully contacted.
於藉由閘閥22關閉搬入搬出口21，將基板G載置在承載器4時，藉由排氣裝置20將腔室2內抽真空至特定真空度。接著，藉由質量流量控制器17自處理氣體供給源18流量調整處理氣體，並經處理氣體供給管15、氣體導入口14及噴淋頭11供給至腔室2內，在該狀態下將直流電壓施加至靜電吸附機構而使基板G吸附於承載器4。When the loading/unloading port 21 is closed by the gate valve 22 and the substrate G is placed on the carrier 4, the inside of the chamber 2 is evacuated to a specific degree of vacuum by the exhaust device 20. Next, the process gas is adjusted from the process gas supply source 18 by the mass flow controller 17, and supplied to the chamber 2 through the process gas supply pipe 15, the gas introduction port 14, and the shower head 11, and DC is supplied in this state. The voltage is applied to the electrostatic adsorption mechanism to adsorb the substrate G to the carrier 4.
然後，自高頻電源25經整合器24施加高頻電力至承載器4，使高頻電場產生在當作下部電極之承載器4和當作上部電極之噴淋頭11之間而使腔室2內之處理氣體予以電漿化，並且，為了迴避基板G之溫度變化，例如溫度上昇，藉由壓力控制閥43將來自調溫壓力供給源42之調溫氣體調整成特定壓力，並且經調溫氣體供給線41導入至被承載器4吸附之基板G之背面側之冷卻空間。在該狀 態下，藉由處理氣體之電漿對基板G施予蝕刻處理。Then, high frequency power is applied from the high frequency power source 25 to the carrier 4 via the integrator 24, so that a high frequency electric field is generated between the carrier 4 as the lower electrode and the shower head 11 as the upper electrode. The processing gas in the plasma is pulverized, and the temperature-regulating gas from the temperature-regulating pressure supply source 42 is adjusted to a specific pressure by the pressure control valve 43 in order to avoid the temperature change of the substrate G, for example, the temperature rise, and is adjusted. The warm gas supply line 41 is introduced into the cooling space on the back side of the substrate G adsorbed by the carrier 4. In the shape In the state, the substrate G is subjected to an etching treatment by a plasma of a processing gas.
當對基板G施予蝕刻處理時，則停止來自高頻電源25之高頻電力之施加，並且停止處理氣體及調溫氣體之導入，並且解除藉由靜電吸附機構所產生基板G的吸附。接著，藉由閘閥22開啟搬入搬出口21，並且與接收來自搬運手臂40之基板G相同，使升降銷8a、8b上昇，使基板G下方彎曲成凸狀而自承載器4朝上方離開。之後，當搬運手臂40自搬入搬出口21進入至腔室2內時，則使升降銷8a、8b下降。依此，基板G自升降銷8a、8b轉移至搬運手臂40上。然後，基板G藉由搬運手臂40自搬入搬出口21被搬出至腔室2外。When the etching process is applied to the substrate G, the application of the high-frequency power from the high-frequency power source 25 is stopped, and the introduction of the processing gas and the temperature-regulating gas is stopped, and the adsorption of the substrate G by the electrostatic adsorption mechanism is released. Then, the loading/unloading port 21 is opened by the gate valve 22, and similarly to the substrate G received from the transport arm 40, the lift pins 8a and 8b are raised, and the lower side of the substrate G is bent convexly and separated upward from the carrier 4. Thereafter, when the transport arm 40 enters the chamber 2 from the loading/unloading port 21, the lift pins 8a and 8b are lowered. Accordingly, the substrate G is transferred from the lift pins 8a and 8b to the transport arm 40. Then, the substrate G is carried out of the chamber 2 by the transport arm 40 from the loading/unloading port 21.
本實施形態中，藉由將升降銷8a配置成比升降銷8b更高出特定量而在下方彎曲成凸狀之狀態下支撐基板G，依此因可以抑止因升降銷8a、8b間部份之彎曲以及升降銷8b之支撐作用力所引起之基板G變形，並抑止基板G對當作下部電極發揮功能之承載器4浮起，故可以於電漿蝕刻處理時藉由自承載器4所供給之調溫氣體，將基板G在整個表面均等予以冷卻，依此能夠有效果抑止蝕刻不均勻發生。再者，蝕刻處理後也相同，因藉由將升降銷8a配置比升降銷8b高出特定量而在下方彎曲承凸狀之狀態下支撐基板G，可以抑止由於升降銷8b之支撐作用力所引起之基板G變形，故可以提高蝕刻之後處理的品質。In the present embodiment, the lift pins 8a are arranged to be supported by the substrate G in a state in which the lift pins 8a are bent by a specific amount higher than the lift pins 8b, whereby the portions between the lift pins 8a and 8b can be suppressed. The bending of the substrate G and the supporting force of the lifting pin 8b are deformed, and the substrate G is prevented from floating on the carrier 4 functioning as the lower electrode, so that it can be self-supported by the carrier 4 during the plasma etching process. The supplied tempering gas uniformly cools the substrate G over the entire surface, whereby it is possible to suppress the occurrence of uneven etching. In addition, after the etching process is the same, the support pin G is supported in a state where the lift pin 8a is disposed higher than the lift pin 8b by a specific amount and is bent downward, so that the support force of the lift pin 8b can be suppressed. The resulting substrate G is deformed, so that the quality of the treatment after etching can be improved.
接著，針對藉由升降銷8a、8b接收來自搬運手臂40及承載器4之基板G之一例予以說明。Next, an example of receiving the substrate G from the transport arm 40 and the carrier 4 by the lift pins 8a and 8b will be described.
第5圖為用以說明藉由升降銷8a、8b接收來自搬運手臂40及承載器4之基板G之態樣的圖式。Fig. 5 is a view for explaining a state in which the substrate G from the carrying arm 40 and the carrier 4 is received by the lift pins 8a, 8b.
藉由搬運手臂40所搬運之基板G有被該搬運手臂10吸附之情形。此時，當將升降銷8a、8b一次上昇而自搬運手臂40接收到基板G時，於自吸附有基板G之搬運手臂40剝落時，受到衝擊而引起大振動，有引起位置偏移破損之虞。在此，於藉由升降銷8a、8b自搬運手臂40接收基板G時，首先如第5圖(a)所示般，將升降銷8a配置成比升降銷8b高出特定量，使升降銷8a、8b上昇，如第5圖(b)所示般，基板G保持與搬運手臂40接觸而扺接於升降銷8a，在下方彎曲成凸狀之狀態，更佳為基板G將要自搬運手臂40離開之前的狀態時，暫時停止升降銷8a、8b之上昇。依此，即使基板G吸附於搬運手臂40時，因漸漸自搬運手臂40剝落基板G，故可以抑制基板G之振動。然後，如第5圖(c)所示般，再次開啟升降銷8a、8b之上昇，使基板G自搬運手臂40離開。依此，能夠將基板G從搬運手臂40上安全轉移至升降銷8a、8b上。The substrate G transported by the transport arm 40 is adsorbed by the transport arm 10. At this time, when the lift pins 8a and 8b are lifted up one by one and the substrate G is received from the transport arm 40, when the transport arm 40 from which the substrate G is adsorbed is peeled off, a large vibration is caused by the impact, and the positional displacement is broken. Hey. Here, when the substrate G is received from the transport arm 40 by the lift pins 8a and 8b, first, as shown in Fig. 5(a), the lift pins 8a are arranged to be higher than the lift pins 8b by a specific amount, so that the lift pins are provided. 8a and 8b are raised, and as shown in Fig. 5(b), the substrate G is held in contact with the transport arm 40 and is connected to the lift pin 8a, and is bent downward in a convex shape. More preferably, the substrate G is to be self-transported. When the state before 40 leaves, the rise of the lift pins 8a, 8b is temporarily stopped. As a result, even when the substrate G is adsorbed to the transport arm 40, the substrate G is gradually peeled off from the transport arm 40, so that the vibration of the substrate G can be suppressed. Then, as shown in Fig. 5(c), the lift pins 8a and 8b are opened again to separate the substrate G from the transport arm 40. Accordingly, the substrate G can be safely transferred from the transport arm 40 to the lift pins 8a and 8b.
並且，如第5圖(c)所示般，於再次開啟升降銷8a、8b，使基板G自搬運手臂40離開時，例如藉由搬運手臂40吸附中央部，於基板G產生振動時，則如第5圖(d)所示般，使升降銷8a、8b下降。然後，如第5圖(e)所示般，基板G下方彎曲成凸狀而再次接觸於搬運手臂40之狀態，更佳為緊跟著基板G接觸於搬運手臂40之後的狀態時，停止升降銷8a、8b之下降。在該狀態中，因基板G和搬運手臂之接觸部份為小，有基板G再次吸附於搬運手臂40之虞，故可以確實抑制基板G之振動。之後，如第5圖(f)所示般，藉由再次使升降銷8a、8b上昇，使基板G自搬運手臂40離開，則能夠藉由升降銷8a、8b將基板G自搬運手臂40上安全轉移。Further, as shown in FIG. 5(c), when the lift pins 8a and 8b are opened again and the substrate G is separated from the transport arm 40, for example, when the transport arm 40 is attracted to the central portion and the substrate G is vibrated, the vibration is generated on the substrate G. As shown in Fig. 5(d), the lift pins 8a, 8b are lowered. Then, as shown in FIG. 5(e), the lower side of the substrate G is curved in a convex shape and is in contact with the transport arm 40 again, and more preferably, the substrate G is stopped immediately after the substrate G is in contact with the transport arm 40. The drops of pins 8a, 8b. In this state, since the contact portion between the substrate G and the transport arm is small, and the substrate G is again adsorbed to the transport arm 40, the vibration of the substrate G can be surely suppressed. Thereafter, as shown in FIG. 5(f), by raising the lift pins 8a and 8b again and moving the substrate G away from the transport arm 40, the substrate G can be transported from the transport arm 40 by the lift pins 8a and 8b. Safe transfer.
第6圖為用以說明藉由升降銷8a、8b接收來自承載器4之基板G之態樣的圖式。Fig. 6 is a view for explaining a state in which the substrate G from the carrier 4 is received by the lift pins 8a, 8b.
蝕刻處理後之基板G因有即使解除藉由靜電吸附機構之吸附，亦吸附於當作下部電極之承載器4之情形，故藉由升降銷8a、8b執行來自承載器4之基板G的接收，也與來自搬運手臂40之接收相同為佳。首先，如第6圖(a)所示般，以將升降銷8a配置成比升降銷8b高出特定量之方式，使升降銷8a、8b上昇(即使僅使升降銷8a上昇亦可)，如第6圖所示般，在保持基板G與搬運手臂40接觸而抵接於升降銷8a，在下方彎曲成凸狀之狀態，更佳為基板G將要自搬運手臂40離開之前的狀態時，暫時停止升降銷8a、8b之上昇。然後，如第6圖(c)所示般，再次開啟升降銷8a、8b之上昇，使基板G自搬運手臂40離開。依此，能夠抑制基板G之振動，使基板G安全從承載器4轉移至升降銷8a、8b上。Since the substrate G after the etching treatment is adsorbed to the carrier 4 as the lower electrode even if the adsorption by the electrostatic adsorption mechanism is released, the reception of the substrate G from the carrier 4 is performed by the lift pins 8a, 8b. It is also preferable to the reception from the carrying arm 40. First, as shown in Fig. 6(a), the lift pins 8a are arranged to be raised by a specific amount higher than the lift pins 8b, so that the lift pins 8a and 8b are raised (even if only the lift pins 8a are raised). As shown in Fig. 6, when the holding substrate G is in contact with the transport arm 40 and abuts against the lift pin 8a, and is bent downward in a convex shape, it is more preferable that the substrate G is in a state before being removed from the transport arm 40. The rise of the lift pins 8a, 8b is temporarily stopped. Then, as shown in Fig. 6(c), the rise of the lift pins 8a, 8b is again turned on, and the substrate G is separated from the transport arm 40. Accordingly, the vibration of the substrate G can be suppressed, and the substrate G can be safely transferred from the carrier 4 to the lift pins 8a and 8b.
再者，如第6圖(c)所示般，再次開啟升降銷8a、8b，使基板G自承載器4離開時，例如藉由承載器4吸附中央部，於基板G產生振動時，則如第6圖(d)所示般，使升降銷8a、8b下降。然後，如第6圖(e)所示般，基板G下方彎曲成凸狀而再次接觸於承載器4之狀態，更佳為緊跟著基板G接觸於承載器4之後的狀態時，停止升降銷8a、8b之下降。之後，如第6圖(f)所示般，藉由再次使升降銷8a、8b上昇，使基板G自搬運手臂40離開。依此，可以更確實抑制基板G之振動，能夠藉由升降銷8a、8b安全將基板G自承載器4上轉移。Further, as shown in Fig. 6(c), when the lift pins 8a and 8b are opened again to move the substrate G away from the carrier 4, for example, when the center portion is attracted by the carrier 4 and the substrate G is vibrated, As shown in Fig. 6(d), the lift pins 8a, 8b are lowered. Then, as shown in Fig. 6(e), the lower side of the substrate G is bent into a convex shape to be in contact with the carrier 4 again, and more preferably, immediately after the substrate G is in contact with the carrier 4, the lifting is stopped. The drops of pins 8a, 8b. Thereafter, as shown in FIG. 6(f), the lift pins 8a and 8b are raised again to separate the substrate G from the transport arm 40. Accordingly, the vibration of the substrate G can be more reliably suppressed, and the substrate G can be safely transferred from the carrier 4 by the lift pins 8a and 8b.
接著，調整升降銷8a和升降銷8b之突出高度之差，並且，測量支撐基板G之時之作用於各升降銷8a、8b之基板G之荷重。基板G之尺寸(縱×橫)為1800mm×1500mm，作用於各升降銷8a、8b之基板G之荷重之測量，是如第7圖所示般，藉由設置在各升降銷8a、8b之前端部之荷重檢測部之荷重檢測器50而執行。將結果表示於第8圖。並且，第8圖中，將縱軸設為(各荷重感測器50所取得之測量值)，將橫軸設為(升降銷8b之高度－升降銷8a之高度)。Next, the difference between the protruding heights of the lift pins 8a and the lift pins 8b is adjusted, and the load acting on the substrates G of the lift pins 8a, 8b at the time of supporting the substrate G is measured. The size (length × width) of the substrate G is 1800 mm × 1500 mm, and the measurement of the load applied to the substrate G of each of the lift pins 8a and 8b is as shown in Fig. 7, and is provided in each of the lift pins 8a, 8b. The load detector 50 of the load detecting portion of the front end portion is executed. The results are shown in Fig. 8. Further, in Fig. 8, the vertical axis is (measured value obtained by each load sensor 50), and the horizontal axis is (the height of the lift pin 8b - the height of the lift pin 8a).
如第8圖所示般，於將升降銷8a配置成比升降銷8b些許高之時，雖然藉由各荷重感測器50所取得之測量值產生大偏差程度，但是隨著升降銷8a和升降銷8b之高度之差變大，藉由各荷重感測器50所取得之測量值之偏差程度變小，於將升降銷8a配置成比升降銷8b高出特定量，在此例如20mm時，則比將升降銷配置成與升降銷8b相等高度之時，或是升降銷8a配置成比升降銷8b低之時，藉由各荷重感測器50所取得之測定值之偏差程度變小。即是，如本實施形態般，確認出藉由將升降銷8a配置成比升降銷8b高出特定量，可以均衡佳將基板G之荷重分散至各升降銷8a、8b。因此，若藉由本實施形態，可以抑止基板G之變形，並且可以安定基板G而予以支撐。As shown in Fig. 8, when the lift pins 8a are arranged slightly higher than the lift pins 8b, although the measured values obtained by the load sensors 50 cause a large degree of deviation, the lift pins 8a and The difference in height between the lift pins 8b is increased, and the degree of deviation of the measured values obtained by the load sensors 50 is reduced, and the lift pins 8a are arranged to be higher than the lift pins 8b by a specific amount, for example, 20 mm. When the lift pins are disposed at the same height as the lift pins 8b, or when the lift pins 8a are disposed lower than the lift pins 8b, the degree of deviation between the measured values obtained by the load sensors 50 becomes smaller. . In other words, as in the present embodiment, it is confirmed that the lift pin 8a is disposed higher than the lift pin 8b by a specific amount, so that the load of the substrate G can be evenly distributed to the lift pins 8a and 8b. Therefore, according to the present embodiment, deformation of the substrate G can be suppressed, and the substrate G can be stabilized and supported.
以上，雖然說明本發明之最佳實施形態，但是本發明並不限定於上述實施形態，可作各種變更。上述實施形態雖然以設置多數根例如兩根支撐基板中央部之升降銷，但是即使1根該升降銷亦可。再者，上述實施形態中，雖然使用配置成比支撐基板周邊緣部之升降銷支撐基板中央部之升降銷高出特定量之獨立驅動部，但是並不限定於此，亦可重新改變升降銷之長度，藉由相同驅動部驅動各升降銷，重新改變各升降銷之長度，並且亦可使用獨立之驅動部。並且，上述實施態中，雖然僅針對適用於對下部電極施加高頻電力之RIE型之電容耦合型平行平板電漿蝕刻裝置之例予以說明，但並不限定於此，亦可以適用灰化、CVD成膜等之其他電漿處理裝置，亦可以適用於將基板載置於載置台而予以處理之電漿裝置以外之基板處理裝置全部。並且，雖然在上述實施形態中，針對適用於FPD用之玻璃基板之例予以說明，但是亦可適用於FPD用之玻璃基板以外之具有可撓性之基板全部。The preferred embodiments of the present invention have been described above, but the present invention is not limited to the above embodiments, and various modifications can be made. In the above embodiment, a plurality of lift pins are provided, for example, at the center of the two support substrates, but one lift pin may be used. Further, in the above-described embodiment, the independent driving unit is disposed at a specific amount higher than the lifting pin of the center portion of the lifting pin supporting the substrate at the peripheral edge portion of the support substrate. However, the present invention is not limited thereto, and the lifting pin may be changed again. The length of each of the lift pins is driven by the same drive unit, and the length of each lift pin is changed again, and a separate drive unit can also be used. Further, in the above-described embodiment, an example of the RIE type capacitive coupling type parallel plate plasma etching apparatus applied to apply high frequency power to the lower electrode is described. However, the present invention is not limited thereto, and ashing, Other plasma processing apparatuses such as CVD film formation may be applied to all of the substrate processing apparatuses other than the plasma apparatus which is placed on the mounting table and processed. Further, in the above embodiment, an example of a glass substrate suitable for FPD is described. However, it is also applicable to all flexible substrates other than the glass substrate for FPD.
1．．．電漿蝕刻裝置(基板處理裝置：電漿處理裝置)1. . . Plasma etching device (substrate processing device: plasma processing device)
2．．．腔室(處理容器)2. . . Chamber (processing vessel)
4．．．承載器(載置台)4. . . Carrier (mounting table)
8a．．．升降銷(第1升降銷)8a. . . Lifting pin (1st lifting pin)
8b．．．升降銷(第2升降銷)8b. . . Lifting pin (2nd lifting pin)
9a、9b．．．驅動部(驅動機構)9a, 9b. . . Drive unit
15．．．處理氣體供給管15. . . Process gas supply pipe
18．．．處理氣體供給源18. . . Process gas supply
19．．．排氣管19. . . exhaust pipe
20．．．排氣裝置20. . . Exhaust
25．．．高頻電源25. . . High frequency power supply
31．．．控制器31. . . Controller
32．．．使用者介面32. . . user interface
33．．．記憶部33. . . Memory department
40．．．搬運手臂(搬運構件)40. . . Handling arm (transporting member)
50．．．荷重感測器(荷重檢測部)50. . . Load sensor (load detection unit)
G．．．玻璃基板(被處理基板)G. . . Glass substrate (substrate to be processed)
第1圖為具備有本發明所涉及之基板載置機構之基板處理裝置之一實施形態的電漿裝置之側面方向之概略剖面圖。Fig. 1 is a schematic cross-sectional view showing a side surface direction of a plasma device according to an embodiment of a substrate processing apparatus including a substrate mounting mechanism according to the present invention.
第2圖為電漿蝕刻裝置之平面方向之概略剖面圖。Fig. 2 is a schematic cross-sectional view showing the plane direction of the plasma etching apparatus.
第3圖為基板載置機構之概略圖。Fig. 3 is a schematic view of a substrate mounting mechanism.
第4圖為用以說明藉由屬於基板載置機構之構成要素的升降銷支撐基板之態樣的圖式。Fig. 4 is a view for explaining a state in which a substrate is supported by a lift pin belonging to a constituent element of a substrate mounting mechanism.
第5圖為用以說明藉由升降銷接收來自搬運手臂之基板的態樣之圖式。Fig. 5 is a view for explaining a state in which a substrate from a carrying arm is received by a lift pin.
第6圖為用以說明藉由升降銷接收來自承載器之基板的態樣之圖式。Fig. 6 is a view for explaining a state in which a substrate from a carrier is received by a lift pin.
第7圖為用以說明作用於升降銷之基板之荷重的測量方法之圖式。Fig. 7 is a view for explaining a method of measuring a load applied to a substrate of a lift pin.
第8圖為表示第7圖所示之測定方法所取得之測定結果之圖式。Fig. 8 is a view showing the measurement results obtained by the measurement method shown in Fig. 7.
第9圖為以往之基板載置機構之概略圖。Fig. 9 is a schematic view showing a conventional substrate mounting mechanism.
2．．．腔室(處理容器)2. . . Chamber (processing vessel)
4．．．承載器(載置台)4. . . Carrier (mounting table)
4a．．．基材4a. . . Substrate
4b、4c．．．絕緣構件4b, 4c. . . Insulating member
7a、7b．．．插通孔7a, 7b. . . Insert hole
8a．．．升降銷(第1升降銷)8a. . . Lifting pin (1st lifting pin)
8b．．．升降銷(第2升降銷)8b. . . Lifting pin (2nd lifting pin)
9a、9b．．．驅動部(驅動機構)9a, 9b. . . Drive unit
11．．．噴淋頭11. . . Sprinkler
12．．．氣體擴散空間12. . . Gas diffusion space
13．．．吐出孔13. . . Spit hole
14．．．氣體導入口14. . . Gas inlet
19．．．排氣管19. . . exhaust pipe
31．．．控制器31. . . Controller
32．．．使用者介面32. . . user interface
33．．．記憶部33. . . Memory department
40．．．搬運手臂(搬運構件)40. . . Handling arm (transporting member)
G．．．玻璃基板(被處理基板)G. . . Glass substrate (substrate to be processed)
Claims (15)
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| JP2006234723A JP4795899B2 (en) | 2006-08-31 | 2006-08-31 | Substrate mounting mechanism and substrate delivery method |
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| TWI409907B true TWI409907B (en) | 2013-09-21 |
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| JP (1) | JP4795899B2 (en) |
| KR (2) | KR20080020555A (en) |
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