JP4080401B2 - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

Info

Publication number
JP4080401B2
JP4080401B2 JP2003314209A JP2003314209A JP4080401B2 JP 4080401 B2 JP4080401 B2 JP 4080401B2 JP 2003314209 A JP2003314209 A JP 2003314209A JP 2003314209 A JP2003314209 A JP 2003314209A JP 4080401 B2 JP4080401 B2 JP 4080401B2
Authority
JP
Japan
Prior art keywords
substrate
suction
portion
surface
adsorption
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2003314209A
Other languages
Japanese (ja)
Other versions
JP2005085881A (en
Inventor
博喜 水野
善則 高木
Original Assignee
大日本スクリーン製造株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 大日本スクリーン製造株式会社 filed Critical 大日本スクリーン製造株式会社
Priority to JP2003314209A priority Critical patent/JP4080401B2/en
Publication of JP2005085881A publication Critical patent/JP2005085881A/en
Application granted granted Critical
Publication of JP4080401B2 publication Critical patent/JP4080401B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for performing predetermined processing on a semiconductor substrate, a glass substrate for a liquid crystal display device, a glass substrate for a photomask, a substrate for an optical disk, etc. (hereinafter simply referred to as “substrate”). In particular, the present invention relates to an improvement in adsorbing and desorbing a substrate to and from the substrate mounting portion.

  2. Description of the Related Art Conventionally, there has been known a substrate processing apparatus that performs a predetermined process by adsorbing a substrate to be processed on an adsorption plate (for example, Patent Document 1). Conventionally, there is known an apparatus that lifts and lowers a substrate between a processing plate and a substrate delivery position while supporting the square substrate with a plurality of holding pins (for example, Patent Document 2).

Japanese Patent Laid-Open No. 10-086085 Japanese Patent Laid-Open No. 10-064982

  However, in the apparatus of Patent Document 1, if the substrate to be sucked further increases in size, the suction plate also increases in size. In this case, in order to adsorb and hold the entire surface of the substrate with a good adsorbing force while maintaining the adsorbing force of the substrate, it is necessary to further increase the number of adsorbing holes formed in the adsorbing plate. Cost increases. In particular, when the suction plate is made of a material that is difficult to process, such as stone, the processing cost increases.

  In the apparatus of Patent Document 2, a plurality of support pins for supporting the vicinity of the substrate edge are provided, but only one support pin for supporting the vicinity of the center of the substrate is provided. Therefore, when removing the portion near the center of the substrate out of the substrate adsorption portion adsorbed on the processing plate, it is not possible to apply an upward force evenly to the substrate, and the adsorption can be released satisfactorily. Can not.

  Further, in the apparatus of Patent Document 2, the support pin that supports the vicinity of the edge portion of the substrate and the support pin that supports the vicinity of the center portion of the substrate cannot be raised and lowered independently. Therefore, depending on the warpage of the substrate, for example, when the substrate is warped upward, the vicinity of the center of the substrate may not come into contact with the processing plate, and the substrate is satisfactorily adsorbed to the processing plate. Can not do it.

  Further, in the apparatuses of Patent Document 1 and Patent Document 2, even when the position of the substrate to be sucked placed on the suction plate (or processing plate) is shifted, the substrate position is within a predetermined range. It is not possible to adjust the thickness of the substrate, and good substrate processing cannot be performed.

  Even if the position on the suction plate is within a predetermined range, if the position of the substrate is shifted when suction is released, the substrate is transported to the processing unit in the subsequent process by the transport unit with the positional shift occurring, and the positional shift is The substrate is supplied to the processing unit in the subsequent process without being adjusted. For this reason, depending on the amount of positional deviation, a substrate processing failure occurs in the processing unit in the subsequent process.

  Therefore, in the present invention, a substrate processing apparatus capable of satisfactorily adsorbing a substrate to the substrate platform and removing the substrate adsorbed to the substrate platform even when the substrate is large-sized. The purpose is to provide.

  In order to solve the above-mentioned problem, the invention of claim 1 is a substrate processing apparatus for performing a predetermined process on a substrate, and suction means for sucking and holding the substrate placed on the suction surface of the substrate placement portion. And a first support part that lifts and lowers the substrate between a position of the suction surface and a substrate delivery position above the suction surface, and supports the vicinity of an edge of the substrate, Elevating means supporting a vicinity of the central portion and having a second support portion that can be raised and lowered independently of the first support portion, and the suction means is provided on the suction surface, Or a plurality of suction grooves that are divided into a plurality of sections and communicate with each other in each section; a plurality of suction holes that are connected to the plurality of suction grooves and pass through the substrate placement section; And an exhaust means for exhausting the vicinity of the adsorption surface. The groove spacing between the edge suction grooves used for suction in the vicinity of the edge portion of the substrate among the suction grooves is narrower than the groove spacing between the center suction grooves used for suction near the center portion of the substrate. It is characterized by.

  According to a second aspect of the invention, there is provided the substrate processing apparatus according to the first aspect, wherein the edge suction grooves are connected to each other, and the center suction grooves are also connected to each other, while the edge edges are connected to each other. The suction groove and the central suction groove are not connected, and the exhaust means is connected to an edge suction hole communicating with the edge suction groove among the plurality of suction holes, A first exhaust part that exhausts the atmosphere between the vicinity of the edge part and the adsorption surface, and a central part suction hole that communicates with the central part suction groove among the plurality of suction holes; Independently of the exhaust part, it has a second exhaust part for exhausting the atmosphere between the vicinity of the center of the substrate and the adsorption surface.

  Further, the invention of claim 3 is the substrate processing apparatus according to claim 2, wherein the substrate processing apparatus communicates with the central portion suction hole, and is not connected to the suction portion through the central portion suction hole and the central portion suction groove. An inert gas supply means for supplying an active gas is further provided.

  According to a fourth aspect of the present invention, there is provided a substrate processing apparatus for performing a predetermined process on a substrate so that a position of the substrate mounting portion and the substrate mounted on the substrate mounting portion is within a predetermined range. An alignment mechanism to be adjusted, and the substrate is sucked and held on the suction surface of the substrate mounting portion, provided on the substrate side of the suction portion of the suction means, and is entirely or divided into a plurality of sections in each section A plurality of suction grooves communicated with each other, a plurality of suction grooves connected to the plurality of suction grooves, a plurality of suction holes penetrating the substrate mounting portion, and a plurality of suction holes connected in communication with each other around the suction surface. An inert gas that communicates with the plurality of adsorption holes and supplies the inert gas to the adsorption portion through the plurality of adsorption holes and the plurality of adsorption grooves. A supply means, and the substrate among the plurality of suction grooves Groove spacing of edge suction grooves each other used in the adsorption in the vicinity of the edge portion, and wherein the narrower than the groove spacing in the central portion suction grooves each other used in the adsorption in the vicinity of the center portion of the substrate.

  According to a fifth aspect of the present invention, in the substrate processing apparatus according to any one of the first to fourth aspects, the width of each of the plurality of suction grooves is 2.0 mm or less.

  According to a sixth aspect of the present invention, in the substrate processing apparatus according to any one of the first to fifth aspects, at least one of the edge portion suction grooves corresponds to a substrate outer peripheral portion of the suction surface. It is characterized by being provided within 10.0 mm from the portion to be.

  Further, the invention according to claim 7 is the substrate processing apparatus according to claim 6, wherein the other edge edge adsorption groove is 10.0 mm from a portion of the adsorption surface corresponding to the outer peripheral part of the substrate. It is provided in a larger range of 30.0 mm or less.

  According to an eighth aspect of the present invention, in the substrate processing apparatus according to any one of the first to seventh aspects, a groove interval between the central suction grooves is 100.0 mm or less.

  According to a ninth aspect of the present invention, in the substrate processing apparatus according to any one of the first to eighth aspects, the slit nozzle that discharges a predetermined processing liquid and the entire surface of the substrate held on the suction surface. In order to discharge the processing liquid, the apparatus further comprises moving means for moving the slit nozzle relative to the substrate.

According to a tenth aspect of the present invention, there is provided an elevating means capable of independently raising and lowering the first support portion supporting the vicinity of the edge portion of the substrate and the second support portion supporting the vicinity of the center portion of the substrate. A substrate processing method for adsorbing and holding the substrate on an adsorption surface of a substrate placement unit, wherein the substrate placed on the adsorption surface is provided on the adsorption surface and is divided in whole or in a plurality of sections. A plurality of suction grooves communicating with each other within each section, and a plurality of suction holes penetrating the substrate mounting portion and connected to the plurality of suction holes. And exhaust means for exhausting the vicinity of the suction surface, and among the plurality of suction grooves, a gap between the edge suction grooves used for suction near the edge of the substrate is the substrate. Narrower than the gap between the central suction grooves used for suction near the center Is adsorbed by the wearing means, (a) the first is lowered the substrate by the support portion and the second supporting portion, and a step to reach the vicinity of the center portion of the substrate to the suction surface, (b) the A step of starting an exhaust process in the vicinity of the adsorption surface at or near the time when the vicinity of the center of the substrate reaches the adsorption surface, and (c) while performing the exhaust process, the second support unit performs the exhaust process. And lowering the substrate so that the vicinity of the edge of the substrate reaches the suction surface.

Further, the invention of claim 11 is the substrate processing method according to claim 10, wherein ( d ) the exhaust means is released to the atmosphere so that the vicinity of the adsorption surface on which the substrate is adsorbed is released to a substantially atmospheric pressure. And ( e ) a step of supplying an inert gas between the lower surface of the substrate and the adsorption surface after the releasing step, and ( f ) a position of the substrate placed on the substrate platform is predetermined. And an adjusting step for adjusting to be in a range.

  According to the first to third aspects of the invention, the first support portion and the second support portion can be lowered independently. Thereby, a board | substrate can be made to adsorb | suck to an adsorption | suction surface toward the edge part direction from the center part vicinity of a board | substrate. Therefore, even a substrate having warpage or undulation can be reliably adsorbed without bending on the adsorption surface.

  Further, according to the invention described in claims 1 to 3, the influence of warpage and undulation is increased by making the groove interval between the edge adsorbing grooves narrower than the groove interval between the central adsorbing grooves. The adsorption power of the edge portion can be increased. Therefore, the substrate can be reliably adsorbed in a short time.

  Further, according to the first to third aspects of the invention, the plurality of suction grooves are provided on substantially the entire suction surface. Thus, the entire surface of the substrate can be adsorbed without providing a large number of adsorption holes on the adsorption surface. Therefore, it is not necessary to provide a large number of through holes in the substrate mounting portion, and the manufacturing cost can be reduced.

  Further, according to the first to third aspects of the invention, since the first support part and the second support part can be moved up and down independently, the first support is made according to the state of warping of the substrate. The height positions of the support pins and the second support pins can be adjusted, and the substrate can be reliably adsorbed by the substrate mounting portion.

  In particular, according to the second aspect of the present invention, the suction process near the center of the substrate and the suction process near the edge of the substrate can be performed independently. Therefore, the substrate adsorption process can be performed more efficiently.

  In particular, according to the invention of claim 3, while the vicinity of the edge of the substrate is adsorbed, the vicinity of the central portion of the substrate is released to the atmosphere, and the inert gas is provided between the lower surface near the central portion of the substrate and the adsorption surface. By supplying, the adsorbed state near the center of the substrate can be released while adsorbing the vicinity of the edge of the substrate. Therefore, the substrate can be quickly removed from the suction surface while preventing the position of the substrate from shifting on the suction surface.

  According to the invention of claim 3, the adsorption state and the fixed state of the substrate can be released by releasing the atmosphere and supplying an inert gas between the lower surface near the center of the substrate and the adsorption surface. . For this reason, it is possible to prevent the wiring pattern formed on the substrate from being destroyed by causing peeling electrification near the center of the substrate when the substrate is removed by the lifting / lowering means.

  According to the fourth aspect of the present invention, since the position can be adjusted by the alignment mechanism even when the position of the substrate placed on the substrate placement portion is not within the predetermined range, Can be adsorbed to a position.

  Further, according to the invention described in claim 4, by making the groove interval between the edge adsorbing grooves narrower than the groove interval between the central adsorbing grooves, the influence of the warp and the undulation is increased. Adsorption power can be increased. Therefore, the substrate can be reliably adsorbed in a short time.

  According to the invention described in claim 4, the plurality of suction grooves are provided on substantially the entire suction surface. Thus, the entire surface of the substrate can be adsorbed without providing a large number of adsorption holes on the adsorption surface. Therefore, it is not necessary to provide a large number of through holes in the substrate mounting portion, and the manufacturing cost can be reduced.

  According to the fourth aspect of the present invention, when the substrate adsorbed on the adsorption surface is removed by supplying an inert gas between the lower surface of the substrate and the adsorption surface, the position of the substrate is adjusted on the adsorption surface. Even in the case of displacement, the alignment mechanism can be adjusted so that the position of the substrate falls within a predetermined range. Therefore, it is possible to quickly remove the substrate from the suction surface, and it is possible to prevent a processing failure from occurring in the subsequent substrate processing due to the displacement of the substrate.

  In particular, according to the fifth aspect of the present invention, the substrate can be satisfactorily adsorbed on the adsorption surface by setting the width of the adsorption groove to 2.0 mm or less.

  In particular, according to the invention described in claim 6, by providing at least one of the edge adsorbing grooves within 10.0 mm from the portion of the adsorbing surface corresponding to the outer peripheral portion of the substrate, Can be satisfactorily adsorbed on the adsorption surface.

  In particular, according to the seventh aspect of the present invention, at least one of the edge suction grooves is provided within 10.0 mm from the portion of the suction surface corresponding to the outer peripheral portion of the substrate, By providing the other one in the range of more than 10.0 mm and 30.0 mm or less from the portion corresponding to the outer peripheral portion of the suction surface of the suction surface, the vicinity of the substrate edge can be more favorably attracted to the suction surface. it can.

  In particular, according to the invention described in claim 8, by making the groove interval between the central adsorption grooves 100.0 mm or less, the vicinity of the central part of the substrate can be favorably adsorbed on the adsorption surface.

  In particular, according to the ninth aspect of the present invention, in the substrate processing in which the processing liquid is discharged from the slit nozzle to the entire surface of the substrate, the substrate can be reliably and quickly adsorbed to the adsorption surface. The treatment liquid can be discharged.

  Further, according to the invention described in claim 10, the first support portion and the second support portion can be lowered independently. As a result, first, (1) the vicinity of the central portion of the substrate reaches the suction surface to be sucked, and (2) the vicinity of the edge portion of the substrate reaches the suction surface to be sucked. Therefore, even a substrate having warpage or undulation can be reliably adsorbed without bending on the adsorption surface.

  According to the invention described in claim 11, even if the position of the substrate is shifted by supplying an inert gas between the lower surface of the substrate and the adsorption surface, the position of the substrate is adjusted by the adjustment process. It can be adjusted to be within a predetermined range. Therefore, it is possible to quickly remove the substrate from the suction surface, and it is possible to prevent a processing failure from occurring in the subsequent substrate processing due to the displacement of the substrate.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

<1. First Embodiment>
<1.1. Configuration of substrate processing apparatus>
FIG. 1 is a perspective view showing an example of the configuration of a substrate processing apparatus 1 according to an embodiment of the present invention. FIG. 2 is a top view showing an example of the configuration of the substrate processing apparatus 1 according to the embodiment of the present invention. 1 and the subsequent drawings are attached with an XYZ orthogonal coordinate system in which the Z-axis direction is the vertical direction and the XY plane is the horizontal plane, as necessary, in order to clarify the directional relationship.

  The substrate processing apparatus 1 is an apparatus that applies a resist to a square substrate W to form a resist film on the surface of the square substrate W. The substrate processing apparatus 1 mainly includes a substrate platform 3 on which a substrate to be processed is placed, and a resist. A slit nozzle 41 that discharges toward the square substrate W and an adsorption unit 70 that adsorbs the square substrate W placed on the substrate platform 3 are provided.

  The substrate platform 3 has a function as a holding table for attracting and holding the placed square substrate W. The substrate platform 3 is made of a substantially rectangular parallelepiped stone, and the holding surface 30 and the side surface of the upper surface thereof are processed into a flat surface. By making the substrate platform 3 made of stone in this way, the thermal expansion of the substrate platform 3 can be reduced, and the square substrate W can be satisfactorily adsorbed and held on the substrate platform 3. Can do.

  FIG. 3 is a top view showing an example of the configuration of the suction portion in the present embodiment. FIG. 4 is a side view showing an example of the configuration of the substrate support portion in the present embodiment. As shown in FIG. 2, the suction portion 70 is provided between two traveling rails 31 a that are substantially in the center of the stone holding surface 30 and extend in parallel in the substantially horizontal direction. This is a member for adsorbing and holding the mounted square substrate W on the holding surface 30. As shown in FIG. 3 and FIG. 4, the suction portion 70 mainly lifts and lowers the square substrate W between the suction holes 72, the suction grooves 75 (75 a and 75 b), the holding surface 30 and the substrate delivery position. A plurality of lift pins 71 (71a, 71b) are provided.

  The suction grooves 75 (75a, 75b) are a plurality of substantially linear grooves formed by scraping the surface of the suction portion 70 on the side where the square substrate W is placed. The suction grooves 75 are provided in a lattice shape so as to be in contact with the entire lower surface of the square substrate W when sucked, and the cross section of the grooves has a substantially square or substantially rectangular shape. Each suction groove 75 is connected to another suction groove 75 intersecting with each other at a lattice point 76, and all the suction grooves 75 communicate with each other at the lattice point 76. Furthermore, as shown in FIG. 3, some of the lattice points 76 on the suction groove 75 are in communication with the suction holes 72.

  Here, as shown in FIG. 4, the suction holes 72 are a plurality of through holes penetrating the substrate platform 3, and the inner diameter of the portion 78 a is formed to be smaller than the inner diameter of the portion 78 b. Each suction hole 72 communicates with a lattice point 76 on the suction groove 75 at the opening 78c on the holding surface 30 side, and the lower part of each suction hole 72 is connected to the vacuum pump 81 via a pipe 85. Communication connection is established.

  Thus, by driving the vacuum pump 81, the atmosphere near the upper surface of the suction unit 70, that is, between the upper surface of the suction unit 70 and the lower surface of the square substrate W is exhausted via the suction groove 75, the suction hole 72 and the pipe 85. can do. Therefore, the vicinity of the lower surface of the square substrate W can be exhausted through the suction grooves 75 and the suction holes 72 without providing the suction holes 72 on substantially the entire surface of the suction portion 70. Therefore, the square substrate W can be adsorbed to the adsorption unit 70 without providing a large number of adsorption holes 72 in the substrate platform 3, and the manufacturing cost of the substrate platform 3 can be reduced. Thus, the suction unit 70 provided on the holding surface 30 is used as a suction surface for sucking the square substrate W placed on the substrate platform 3.

  When releasing the suction state of the square substrate W sucked on the suction portion 70, the vacuum pump 81 is released to the atmosphere so that the vicinity of the suction groove 75 is substantially the same as the atmospheric pressure, and an edge portion described later The square substrate W can be detached from the suction portion 70 by raising the upper end portions of the lift pins 71a and the center lift pins 71b.

  Here, the spacing between the suction grooves 75 is such that the spacing D3 in the horizontal direction (Y-axis direction) and the spacing D6 in the vertical direction (X-axis direction) between the grooves formed in the vicinity of the edge of the square substrate W are as follows. Each of the grooves formed in the vicinity of the central portion of the square substrate W is set to be smaller than the interval D2 in the horizontal direction (Y-axis direction) and the interval D5 in the vertical direction (X-axis direction) (FIG. 3). reference).

  An annular groove (hereinafter also referred to as “first annular adsorption groove”) 75 a connecting the four outermost adsorption grooves among the adsorption grooves 75 formed in the adsorption portion 70 and a predetermined on the holding surface 30. The distances D1 and D4 with respect to the outer peripheral portion W1 of the square substrate W placed in the range are each set to be 10.0 mm or less (preferably 5 m or less). Furthermore, an annular groove (hereinafter referred to as the adsorption groove 75 on the substrate center side as viewed from the first annular adsorption groove 75a) and connecting four adsorption grooves whose distance from the first annular adsorption groove is D3 or D6 , Also referred to as “second annular suction groove”) 75b and the distances (D1 + D3) and (D4 + D6) between the outer peripheral portion W1 of the square substrate W are 30.0 mm or less (preferably 15 m or more and 25 mm or less). It is set to become.

  As a result, the suction force at the edge portion of the substrate that is easily affected by warpage can be increased as compared with the suction force near the center of the substrate. Therefore, even if the size of the square substrate W is increased, the square substrate W placed on the suction portion 70 can be sucked quickly and reliably.

  In the present embodiment, the square substrate W placed on the suction unit 70 is favorably sucked, and the square substrate W is influenced by the air present in the suction groove 75 of the suction unit 70. (1) Each groove width of the suction groove 75 (horizontal width of the cross section of the groove) is 2.0 mm or less (preferably Is 0.5 mm or less), and (2) groove spacings D2 and D5 of the suction grooves 75 corresponding to the vicinity of the central portion of the square substrate W are 100.0 mm or less (preferably 50.0 mm or less), and (3 ) The inner diameter of the portion 78a of the suction hole 72 is set to be 2.0 mm or less (preferably 0.5 mm or less).

  The lift pins 71 are members that move up and down while supporting the square substrate W between the holding surface 30 and the substrate delivery position, and the edge lift pins 71a that support the vicinity of the edge portion of the square substrate W and the square substrate. It is comprised from the center part lift pin 71b which supports the center part vicinity of W.

  As shown in FIG. 3, a plurality of edge lift pins 71 a are provided along the portion corresponding to the edge of the square substrate W in the suction portion 70, specifically, along the second annular suction groove 75. In the present embodiment, 16) are provided. Further, as shown in FIG. 4, each edge lift pin 71 a is provided by being inserted into a through hole 71 c that penetrates the substrate platform 3. Moreover, the lower end part of each edge part lift pin 71a is connected with the base 74a, and the upper end part of each edge part lift pin 71a is set so that it may become substantially the same height. Further, the base 74a is connected to the first elevating mechanism 73a in an interlocking manner, and is provided so as to be movable up and down in the vertical direction (X-axis direction) along a guide portion (not shown).

  Thus, by driving the first elevating mechanism 73 a, the upper end portion of each edge lift pin 71 a can move up and down between a position lower than the holding surface 30 and an upper position of the holding surface 30.

  As shown in FIG. 3, a plurality (six in this embodiment) of center lift pins 71 b are arranged in the portion corresponding to the center of the square substrate W in the suction unit 70. In addition, each central lift pin 71b is provided by being inserted into a through hole 71c penetrating the substrate mounting portion 3 in the same manner as the end edge lift pin 71a (see FIG. 4). Moreover, the lower end part of each center part lift pin 71b is connected with the base 74b, and the upper end part of each center part lift pin 71b is set so that it may become substantially the same height. Furthermore, the base 74b is connected to a second lifting mechanism 73b provided to be driven independently of the first lifting mechanism 73a. The base 74b extends in the vertical direction (X-axis direction) along a guide portion (not shown). It can be moved up and down.

  Thus, by driving the second lifting mechanism 73b, the upper end portion of each central lift pin 71b can be lifted and lowered independently from the upper end portion of the edge lift pin 71a, and the position lower than the holding surface 30 and the holding surface It can move up and down between 30 upper positions.

  Returning to FIGS. 1 and 2, a pair of running rails 31 a extending in parallel in a substantially horizontal direction is fixed to both ends of the holding surface 30 with the suction portion 70 interposed therebetween. The traveling rail 31a guides the movement of the bridging structure 4 together with the support blocks 31b fixed to both ends of the bridging structure 4 (the moving direction is defined in a predetermined direction), and the bridging structure 4 is positioned above the holding surface 30. To support.

  The support block 31b is rigidly coupled to the bridging structure 4 and has a shape (reverse concave shape) in which the lower ends of both side surfaces project downward as compared to the central portion as shown in FIG. It arrange | positions so that 31a may be pinched | interposed from both sides. Thereby, since the movement in the Y-axis direction is limited, the moving direction of the bridging structure 4 can be defined in the X-axis direction along the traveling rail 31a.

  Above the holding surface 30, a bridging structure 4 is provided that extends substantially horizontally from both side portions of the substrate platform 3. The bridging structure 4 is mainly composed of a nozzle support portion 40 that uses carbon fiber resin as an aggregate, and elevating mechanisms 43 and 44 that support both ends thereof. As described above, by using the aggregate made of carbon fiber resin for the nozzle support portion 40 which is a part of the bridging structure 4, it is possible to reduce the weight while maintaining the strength necessary for the bridging structure 4. Therefore, it is possible to reduce the driving force necessary to move the crosslinked structure 4.

  A slit nozzle 41 is attached to the nozzle support portion 40 as shown in FIG. The slit nozzle 41 extending in the horizontal Y direction is connected to a discharge mechanism (not shown) including a pipe for supplying a chemical solution to the slit nozzle 41 and a resist pump. The slit nozzle 41 is supplied with a resist by a resist pump and scans the surface of the square substrate W to discharge the resist to a predetermined region on the surface of the square substrate W.

  The elevating mechanisms 43 and 44 are divided on both sides of the slit nozzle 41 and connected to the slit nozzle 41 by the nozzle support portion 40. The elevating mechanisms 43 and 44 are used for moving the slit nozzle 41 in translation and adjusting the posture of the slit nozzle 41 in the YZ plane.

  The linear motors 50 and 51 are members that generate driving force when moving the nozzle support portion 40 along the X-axis direction. In addition, since the linear motor 51 provided on the opposite side of the bridging structure 4 has substantially the same configuration as the linear motor 50, the linear motor 50 will be described here.

  The linear motor 50 includes a stator (stator) 50a and a mover 50b, and generates a driving force for moving the bridging structure 4 in the X-axis direction by electromagnetic interaction between the stator 50a and the mover 50b. It is a motor. Further, the moving amount and moving direction of the linear motor 50 can be controlled by a control signal from the control system 6. The stator 50 a is fixed to the side surface of the substrate platform 3 so as to extend along the moving direction of the bridging structure 4 and is horizontally disposed at a position lower than the holding surface 30. The mover 50b is fixed to the bridging structure 4 side and faces the stator 50a in a non-contact manner.

  Thus, by using the linear motors 50 and 51 to move the bridging structure 4, it is possible to reduce the amount of dust generated such as oil scattered in the apparatus as compared with the case of using the stepping motor and the ball screw. it can. Moreover, since the linear motors 50 and 51 have a relatively simple structure, the structure of the substrate processing apparatus 1 can be simplified.

  As shown in FIG. 1, the control system 6 includes an arithmetic unit 60 that processes various data according to a program and a storage unit 61 that stores the program and various data. In addition, an operation unit 62 for an operator to input necessary instructions to the substrate processing apparatus 1 and a display unit 63 for displaying various data are provided on the front surface. The control system 6 is connected to each mechanism attached to the substrate processing apparatus 1 by a cable (not shown). Therefore, the control system 6 can control each component such as the stage 3, the bridge structure 4, the lifting mechanisms 43 and 44, and the linear motors 50 and 51 based on signals from the operation unit 62 and various sensors. .

  Specifically, the storage unit 61 corresponds to a RAM that temporarily stores data, a read-only ROM, a magnetic disk device, and the like, and a storage medium such as a portable magneto-optical disk and a memory card; Those readers may be used. The operation unit 62 includes buttons and switches (including a keyboard and a mouse), but may have a function of the display unit 63 such as a touch panel display. The display unit 63 corresponds to a liquid crystal display or various lamps.

<1.2. Substrate adsorption / desorption procedure by substrate processing equipment>
FIG. 5 to FIG. 7 are diagrams for explaining an adsorption procedure and a desorption procedure of the square substrate W in the substrate platform 3 of the present embodiment. Here, after describing the procedure for adsorbing the square substrate W to the adsorption unit 70 of the substrate mounting unit 3, the adsorption state of the square substrate W adsorbed on the adsorption unit 70 is canceled and the square substrate is removed from the adsorption unit 70. A procedure for detaching W will be described.

  First, a procedure for sucking the square substrate W will be described. In the suction procedure, the first lift mechanism 73a and the second lift mechanism 73b are driven before the square substrate W is supported by the lift pins 71, whereby the tip end portions 71d and the center lift pins 71b of the edge lift pins 71a are driven. Is moved to the substrate delivery position. At this time, the amount of movement of the first elevating mechanism 73a and the second elevating mechanism 73b so that the height position of the tip end portion 71d of the edge lift pin 71a is higher than the height position of the tip end portion 71e of the center lift pin 71b. To control.

  Here, the relative positional relationship between the tip portion 71d and the tip portion 71e (the difference in height between the tip portion 71d and the tip portion 71e) is determined by the bending state of the square substrate W. For example, when the square substrate W is bent so that the height position near the center is the lowest (that is, the surface shape of the square substrate W is convex upward (Z-axis positive direction)), the square substrate Compared to the case where the height position in the vicinity of the edge of the substrate W is bent to be the lowest (that is, the surface shape of the square substrate W is convex downward (Z-axis negative direction)). It is necessary to increase the difference in height between 71d and tip 71e.

  By determining the height difference between the tip portion 71d and the tip portion 71e in this way, even when the surface shape of the square substrate W is convex upward, the vicinity of the central portion of the square substrate W and the suction portion The square substrate W can be lowered to the holding surface 30 so as to be in good contact with 70. Therefore, it can be reliably adsorbed from the vicinity of the center portion of the lower surface of the square substrate W toward the end edge portion.

  Next, the rectangular substrate W is supported on the lift pins 71 by a transfer robot or an operator (not shown) (see FIG. 5). At this time, the square substrate W is supported by the lift pins 71 in a bent state in which the height position near the central portion is lower than the height position near the edge portion.

  Subsequently, the first elevating mechanism 73a and the second elevating mechanism 73b are controlled so that the descending speed of the distal end portion 71d of the edge lift pin 71a and the descending speed of the distal end portion 71e of the central lift pin 71b become substantially the same. Adjust to lower. Thereby, the square substrate W descends toward the holding surface 30 while holding the bent state.

  Subsequently, the height position of the tip end portion 71e of the center lift pin 71b is substantially the same height as the height position of the holding surface 30, or the height position of the tip end portion 71e of the center lift pin 71b is the height position of the holding surface 30. At the time when the lower surface near the center of the square substrate W reaches the holding surface 30 (see FIG. 6), the lowering operation of the center lift pin 71b by the second lifting mechanism 73b is stopped and the vacuum pump 81 is lowered. Drive. At this time, since the first elevating mechanism 73a continues to operate, the tip end portion 71d of the end edge lift pin 71a continues to descend.

  Thereby, the lower surface of the square substrate W gradually comes into contact with the suction portion 70 from the vicinity of the central portion toward the edge portion. The atmosphere between the portion of the lower surface of the square substrate W that contacts the suction portion 70 and the suction portion 70 is exhausted by the vacuum pump 81. Therefore, the lower surface of the square substrate W is gradually adsorbed by the adsorbing unit 70 from the vicinity of the center toward the end edge. As a result, the square substrate W can be reliably adsorbed in a short time.

  Then, the height position of the tip end portion 71d of the edge lift pin 71a is substantially the same height as the height position of the holding surface 30, or the height position of the tip end portion 71d is lower than the height position of the holding surface 30 and the corner. When the edge of the mold substrate W reaches the holding surface 30 (see FIG. 7), the lowering operation of the edge lift pins 71a by the first lifting mechanism 73a is stopped. As a result, the entire lower surface of the square substrate W reaches the holding surface 30, and the entire surface of the square substrate W is adsorbed by the adsorbing unit 70 to complete the adsorption process.

  As described above, the groove intervals D3 and D6 between the suction grooves 75 corresponding to the vicinity of the edge portion of the square substrate W are compared with the groove intervals D2 and D5 between the suction grooves 75 corresponding to the vicinity of the center portion. It is set small, and the vicinity of the edge portion of the square substrate W is strongly adsorbed as compared with the vicinity of the central portion. Therefore, even the edge portion of the square substrate W that is easily affected by warpage can be reliably adsorbed.

  Next, a procedure for attaching and detaching the square substrate W will be described. In the desorption procedure, after the resist coating process is completed by the substrate processing apparatus 1, the vacuum pump 81 is released in vacuum. As a result, air flows into the suction groove 75 connected to the vacuum pump 81, and the suction groove 75 portion of the portion where the square substrate W and the suction portion 70 are in contact with each other is in a substantially atmospheric pressure state. Although it is released, the square substrate W continues to be fixed to the suction portion 70 (see FIG. 7).

  Subsequently, the first elevating mechanism 73a is driven while the second elevating mechanism 73b is stopped, and the tip end portion 71d of the edge lift pin 71a is started to rise. At this time, the central lift pin 71b continues to stop. Thereby, since the edge part of the square substrate W rises gradually, the lower surface of the square substrate W fixed to the suction part 70 is gradually peeled off from the suction part 70 from the edge part toward the center part. (See FIG. 6).

  Subsequently, when the tip end portion 71d of the edge lift pin 71a rises to a predetermined height, the second lifting mechanism 73b is driven to move the tip end portion 71e of the center lift pin 71b to the moving speed of the tip end portion 71d of the edge lift pin 71a. The tip 71e is raised so as to be substantially the same. At this time, the tip 71d continues to rise. As a result, the square substrate W rises in a bent state in which the height position near the central portion is lower than the height position near the edge portion. Then, the lower surface of the square substrate W fixed to the suction portion 70 is further peeled from the edge portion toward the center portion to completely release the fixed state, and then the square substrate W is raised to the substrate delivery position. This completes the desorption process (see FIG. 5).

<1.3. Advantages of the substrate processing apparatus of the first embodiment>
As described above, in the substrate processing apparatus 1 according to the first embodiment, the first lift mechanism 73a and the second lift mechanism 73b allow the height position of the tip end portion 71d of the edge lift pin 71a to be the center lift pin 71b. The square substrate W can be lowered from the substrate delivery position to the holding surface 30 while being set to be higher than the height position of the distal end portion 71e. Thereby, the lower surface of the square substrate W can be gradually adsorbed from the vicinity of the central portion toward the edge portion. Therefore, even the square substrate W having warpage or waviness can be reliably adsorbed without being bent on the holding surface.

  Further, in the suction unit 70 of the substrate processing apparatus 1 according to the first embodiment, it corresponds to the vicinity of the edge portion as compared with the groove intervals D2 and D5 of the suction grooves 75 corresponding to the vicinity of the central portion of the square substrate W. The gaps D3 and D5 between the suction grooves 75 to be set are set narrow. Thereby, the adsorption | suction power of the edge part where the influence of curvature and a wave | undulation becomes large can be raised. Therefore, even if the size of the square substrate W is increased, the square substrate W can be reliably adsorbed in a short time.

  Further, in the suction portion 70 of the substrate processing apparatus 1 of the first embodiment, the suction groove 75 communicating with the suction holes 72 is provided on the entire surface of the suction portion 70, so that the square shape without providing a large number of suction holes 72. Since the substrate W can be adsorbed to the adsorption unit 70, the processing cost of the substrate platform 3 can be reduced.

  Furthermore, in the substrate processing apparatus 1 according to the first embodiment, even when the surface shape of the square substrate W is convex upward, the tip portion 71d and the tip end are in accordance with the warpage of the square substrate W. The height difference from the portion 71e can be adjusted. Therefore, even when the surface shape of the square substrate W is convex upward (Z-axis positive direction), the square substrate W can be reliably adsorbed to the adsorption unit 70.

<2. Second Embodiment>
Next, a second embodiment of the present invention will be described. The hardware configuration of the suction unit 170 in the second embodiment is mainly composed of a suction groove corresponding to the vicinity of the edge portion of the square substrate W, and the center as compared with the suction unit 70 of the first embodiment. The first embodiment except that the suction groove corresponding to the vicinity of the portion is not in communication and the atmosphere between the square substrate W and the suction portion 70 can be exhausted independently of each other. Is the same. Therefore, in the following, this difference will be mainly described. In the following description, the same reference numerals are given to the same constituent elements as those in the substrate processing apparatus 1 of the first embodiment. Since the components with the same reference numerals have already been described in the first embodiment, description thereof will be omitted in the present embodiment.

<2.1. Configuration of substrate processing apparatus>
FIG. 8 is a top view showing an example of the configuration of the suction portion in the present embodiment. FIG. 9 is a side view showing an example of the configuration of the substrate support portion in the present embodiment. Similar to the suction unit 70 of the first embodiment, the suction unit 170 is provided between the two traveling rails 31a on the holding surface 30 and extending in parallel with the substantially horizontal direction, and the substrate platform 3 This is a member for adsorbing and holding the square substrate W placed on the holding surface 30. As shown in FIG. 8 and FIG. 9, the suction portion 170 mainly has a square shape between the suction holes 72 (72 a, 72 b), the suction grooves 175 (175 a, 175 b), the holding surface 30, and the substrate delivery position. A plurality of lift pins 71 (71a, 71b) for raising and lowering the substrate W are provided.

  The suction groove 175 (175a, 175b) is formed by cutting the surface on the upper surface of the suction part 170 on the side where the square substrate W is placed, similarly to the suction groove 75 of the first embodiment. A plurality of substantially straight grooves. The cross section of the suction groove 175 has a substantially square or substantially rectangular shape.

  As shown in FIG. 8, the suction grooves 175 a are a plurality of grooves formed in a portion corresponding to the vicinity of the edge portion of the square substrate W. The suction grooves 175a are provided in a lattice shape so as to be in contact with the portion corresponding to the vicinity of the edge portion on the lower surface of the square substrate W when the square substrate W is sucked. Each suction groove 175a is connected to the intersecting suction groove 175a at the lattice point 176a, and all the suction grooves 175a communicate with each other at the lattice point 176a. Furthermore, as shown in FIG. 8, some of the lattice points 176a on the suction groove 175a communicate with the suction holes 72a.

  The suction grooves 175b are a plurality of grooves formed in a portion corresponding to the vicinity of the central portion of the square substrate W. The suction grooves 175b are provided in a lattice shape so as to be in contact with the portion corresponding to the vicinity of the central portion of the lower surface of the square substrate W when the square substrate W is sucked. Each suction groove 175b is connected to the intersecting suction groove 175b at the lattice point 176b, and all the suction grooves 175a communicate with each other at the lattice point 176a. Further, as shown in FIG. 8, some of the lattice points 176b on the suction grooves 175b communicate with the suction holes 72b.

  As shown in FIG. 8, the suction groove 175a of the suction portion 170 of the present embodiment is outside the separation portion 177 having a rectangular ring shape where no groove is formed, and the suction groove 175b is inside the separation portion 177. , Each is arranged. Therefore, each of the suction grooves 175a does not communicate with any of the suction grooves 175b. That is, the suction groove 175 is divided into two subsets (the suction groove 175a and the suction groove 175b), and communicates with each other only within the respective sections.

  As shown in FIG. 9, the suction holes 72 a and 72 b are a plurality of through holes that penetrate the substrate platform 3. The suction holes 72a communicate with the lattice points 176a on the suction grooves 175a, and the suction holes 72b communicate with the lattice points 176b on the suction grooves 175b. Further, as shown in FIG. 9, the lower part of each suction hole 72a communicates with the vacuum pump 181a via a pipe 185a, and the lower part of each suction hole 72b communicates with the vacuum pump 181b via a pipe 185b. ing.

  Thereby, by driving the vacuum pump 181a, the atmosphere between the portion corresponding to the vicinity of the edge portion of the lower surface of the square substrate W and the suction portion 70 via the suction groove 175a, the suction hole 72a and the pipe 185a. Can be exhausted. Further, by driving the vacuum pump 181b, the atmosphere between the portion corresponding to the vicinity of the central portion of the lower surface of the square substrate W and the suction portion 70 is exhausted through the suction groove 175b, the suction hole 72b, and the pipe 185b. can do. Therefore, by driving the vacuum pump 181a and the vacuum pump 181b independently of each other, the vicinity of the central portion and the vicinity of the edge portion of the square substrate W can be sucked to the suction portion 70 independently of each other.

  Further, as shown in FIG. 9, the suction groove 175a is passed through the suction hole 72a, the pipe 185a, the valve 182a and the pipe 184a, and the suction groove 175b is passed through the suction hole 72b, the pipe 185b valve 182b and the pipe 184b. These are connected in communication with a nitrogen gas supply source 83. Therefore, nitrogen gas can be discharged upward from the adsorption groove 175a by opening the valve 182a and closing the valve 182b. Similarly, by opening the valve 182b and closing the valve 182a, nitrogen gas can be discharged upward from the adsorption groove 175b.

  Here, the distance D3 in the horizontal direction (Y-axis direction) and the distance D6 in the vertical direction (X-axis direction) between the suction grooves 175a are the distance D2 in the horizontal direction (Y-axis direction) between the suction grooves 175b and the vertical distance, respectively. It is set to be smaller than the distance D5 in the direction (X-axis direction).

  Further, the distances D1 and D4 between the suction grooves 175a connecting the four outermost grooves (hereinafter also referred to as “third annular suction grooves”) and the outer periphery W1 of the square substrate W are as follows. Each is set to be 10.0 mm or less (preferably 5 m or less). Further, the suction groove 175a on the substrate center side as viewed from the third annular suction groove, which is formed by connecting four grooves whose distance from the third annular suction groove is D3 or D6 (hereinafter referred to as “second” 4), and the distance (D1 + D3) and (D4 + D6) between the outer periphery W1 of the square substrate W are set to be 30.0 mm or less (preferably 15 m or more and 25 mm or less). Has been.

  As a result, as in the first embodiment, it is possible to increase the suction force at the edge portion of the substrate that is susceptible to warpage as compared with the suction force near the center of the substrate. Therefore, the square substrate W placed on the suction unit 70 can be sucked quickly and reliably.

  In the present embodiment, as in the first embodiment, the square substrate W placed on the suction portion 170 is favorably sucked, and the suction portion 170 is placed in the suction groove 175. In order to prevent a temperature distribution from occurring on the lower surface side of the square substrate W due to the influence of air present, and to prevent processing defects of the substrate, (1) the groove width of the suction groove 175 is 2.0 mm or less (preferably 0.5 mm or less), (2) groove spacings D2 and D5 of the suction grooves 175b are 100.0 mm or less (preferably 50.0 mm or less), and (3) the inner diameter of the portion 78a of the suction hole 72 is 2. Each is set to be 0 mm or less (preferably 0.5 mm or less).

<2.2. Substrate adsorption / desorption procedure by substrate processing equipment>
Here, an adsorption procedure and a desorption procedure of the square substrate W in the substrate platform 3 of the present embodiment will be described with reference to FIGS. In addition, the suction procedure of the present embodiment is (1) the point of being sucked independently near the central portion and the vicinity of the edge portion of the square substrate W as compared with the suction procedure of the first embodiment. It is different. Further, the desorption procedure of the present embodiment is compared with the desorption procedure of the first embodiment. (2) When releasing the suction state near the center of the square substrate W, the vacuum pump 181b is connected to the atmosphere. The difference is that the nitrogen gas is discharged from the suction groove 175b toward the square substrate W while being released. Therefore, in the following, this difference will be mainly described.

  First, a procedure for sucking the square substrate W will be described. In the suction procedure, as in the first embodiment, the tip end 71d of the edge lift pin 71a and the tip 71e of the center lift pin 71b are delivered to the substrate before the square substrate W is supported by the lift pins 71. Move to position. At this time, the amount of movement of the first elevating mechanism 73a and the second elevating mechanism 73b so that the height position of the tip end portion 71d of the edge lift pin 71a is higher than the height position of the tip end portion 71e of the center lift pin 71b. To control.

  Next, the rectangular substrate W is supported on the lift pins 71 by a transfer robot or an operator (not shown) (see FIG. 5). At this time, the square substrate W is supported by the lift pins 71 in a bent state in which the height position near the central portion is lower than the height position near the edge portion.

  Subsequently, the first elevating mechanism 73a and the second elevating mechanism 73b are controlled so that the descending speed of the distal end portion 71d of the edge lift pin 71a and the descending speed of the distal end portion 71e of the central lift pin 71b become substantially the same. Adjust to lower.

  Subsequently, the height position of the tip end portion 71e of the center lift pin 71b is substantially the same as the height position of the holding surface 30, or the height position of the tip end portion 71e of the center lift pin 71b is lower than the height position of the holding surface 30. When the lower surface near the central portion of the square substrate W reaches the holding surface 30 (see FIG. 6), the lowering operation of the central lift pin 71b by the second lifting mechanism 73b is stopped and the vacuum pump 181a is stopped. The vacuum pump 181b is driven while maintaining the state. At this time, since the first elevating mechanism 73a continues to operate, the tip end portion 71d of the end edge lift pin 71a continues to descend.

  Thereby, the lower surface of the square substrate W gradually comes into contact with the suction portion 170 from the vicinity of the central portion toward the edge portion. Then, the atmosphere between the vicinity of the lower surface of the square substrate W in contact with the suction groove 175b of the suction portion 170 and the suction portion 170 is exhausted by the vacuum pump 181b.

  Therefore, the portion of the lower surface of the square substrate W that contacts the suction groove 175b is gradually sucked by the suction portion 170 from the vicinity of the central portion toward the edge portion. That is, in the present embodiment, the vicinity of the central portion of the square substrate W can be sucked by the suction groove 175b that is not communicated with the suction groove 175a and is used only for the suction near the central portion of the square substrate W. Compared to the first embodiment, the vicinity of the central portion of the square substrate W can be adsorbed to the adsorbing portion 170 more efficiently and reliably.

  Subsequently, the height position of the tip end portion 71d of the edge lift pin 71a is substantially the same as the height position of the holding surface 30, or the height position of the tip end portion 71d of the edge lift pin 71a is the height of the holding surface 30. When the portion corresponding to the vicinity of the edge portion of the lower surface of the square substrate W reaches the holding surface 30 lower than the position, the lowering operation of the edge lift pins 71a by the first lifting mechanism 73a is stopped, The driving of the vacuum pump 181a is started while maintaining the driving state of the vacuum pump 181b. Thereby, the atmosphere between the vicinity of the lower surface of the square substrate W in contact with the suction groove 175a of the suction portion 170 and the suction portion 170 is exhausted by the vacuum pump 181a.

  Therefore, the portion of the lower surface of the square substrate W that contacts the suction groove 175a is gradually sucked by the suction portion 170 from the vicinity of the edge portion toward the outer peripheral portion W1. That is, in the present embodiment, the vicinity of the edge of the square substrate W can be sucked by the suction groove 175a used only in the vicinity of the edge of the square substrate W, which is compared with the first embodiment. As a result, the vicinity of the edge portion of the square substrate W can be adsorbed to the adsorption unit 170 more efficiently and reliably.

  Then, the entire lower surface of the square substrate W reaches the holding surface 30, and the entire surface of the square substrate W is adsorbed by the adsorbing unit 70, and the adsorbing process is completed.

  Next, a procedure for removing the substrate W will be described. In the desorption procedure, after the resist coating process by the substrate processing apparatus 1 is completed, the vacuum pump 181a releases the vacuum pump 181b while maintaining the vacuum state, and opens the valve 182b (see FIG. 9) to open the suction groove. Nitrogen gas is discharged from 175b to the vicinity of the central portion of the square substrate W.

  As a result, the suction state near the center portion of the lower surface of the square substrate W is released, and the suction state near the edge portion of the lower surface of the square substrate W is maintained, while the fixed state near the center portion is maintained. It can be canceled. That is, nitrogen gas can be discharged upward from the adsorption groove 175b while fixing the vicinity of the edge portion of the square substrate W, and the central portion of the square substrate W is not displaced without causing the positional displacement of the square substrate W. The fixed state in the vicinity can be released. Therefore, the fixed state in the vicinity of the central portion of the square substrate W can be released quickly and reliably.

  Further, the fixed state near the center of the lower surface of the square substrate W can be released by discharging nitrogen gas from the adsorption groove 175b. Therefore, when the square substrate W is removed from the adsorbing portion 70, there is no possibility that peeling charge will occur near the center of the square substrate W, and there is no possibility that the wiring pattern will be destroyed by this peeling charge.

  Subsequently, the vacuum pump 181a is opened to the atmosphere to release the suction state in the vicinity of the edge portion of the square substrate W, and the first lifting mechanism 73a is driven while the second lifting mechanism 73b is stopped to move the edge lifting pin. The tip 71d of 71a starts to rise. Thereby, since the edge part of the square substrate W gradually rises, the lower surface of the square substrate W fixed to the suction part 70 is gradually peeled away from the edge part toward the center part ( (See FIG. 6).

  Subsequently, when the tip end portion 71d of the edge lift pin 71a rises to a predetermined height, the second elevating mechanism 73b starts to be driven, the rising speed of the tip end portion 71e of the center lift pin 71b and the tip end of the edge lift pin 71a. The tip portion 71e is raised so that the rising speed of the portion 71d is substantially the same. At this time, the tip 71d continues to rise. As a result, the square substrate W rises in a bent state in which the height position near the central portion is lower than the height position near the edge portion.

  Then, after the fixed state of the lower surface of the square substrate W corresponding to the vicinity of the edge portion is released and the fixed state of the entire lower surface of the square substrate W is released, the square substrate W is moved to the substrate delivery position. The desorption process is ended by raising (see FIG. 5).

<2.3. Advantages of Substrate Processing Apparatus According to Second Embodiment>
As described above, in the substrate processing apparatus 1 according to the second embodiment, the vicinity of the edge portion and the vicinity of the center portion of the lower surface of the square substrate W can be adsorbed to the adsorption portion 170 independently of each other. Therefore, the vicinity of the central portion and the vicinity of the edge portion of the square substrate W can be more efficiently adsorbed to the adsorbing portion 70. As a result, even if the size of the square substrate W is further increased, the square substrate W can be quickly and reliably adsorbed to the adsorption unit 70.

  In the substrate processing apparatus 1 according to the second embodiment, the vacuum pump 181b is released to the atmosphere while the vacuum pump 181a is kept in a vacuum state, and the suction grooves 175b corresponding to the vicinity of the central portion of the square substrate W are squared. Nitrogen gas can be discharged toward the lower surface of the mold substrate W. Therefore, the fixed state in the vicinity of the central portion of the lower surface of the square substrate W can be released without raising the central lift pins 71b. As a result, it is possible to detach and attach the square substrate W in a short time and reliably while preventing peeling charging.

<3. Third Embodiment>
Here, a third embodiment of the present invention will be described. The hardware configuration of the substrate platform 3 in the third embodiment is mainly that of the square substrate W placed on the substrate platform 3 as compared with the suction unit 70 in the first embodiment. The second embodiment is the same as the first embodiment except that a plurality of alignment mechanisms 210 for adjusting the position are further added. Therefore, in the following, this difference will be mainly described. In the following description, the same reference numerals are given to the same constituent elements as those in the substrate processing apparatus 1 of the first embodiment. Since the components with the same reference numerals have already been described in the first embodiment, description thereof will be omitted in the present embodiment.

<3.1. Configuration of substrate processing apparatus>
FIG. 10 is a top view showing an example of the configuration of the substrate platform 3 in the present embodiment. As shown in FIG. 10, one alignment mechanism 210 is provided near the outside of each corner portion of the suction portion 70 having a substantially rectangular shape (four in total).

  As shown in FIG. 10, each alignment mechanism 210 mainly includes a drive unit 211, an arm unit 212, a support unit 213, and a contact unit 214. The arm portion 212 is provided so as to be able to move in and out in the direction of the arrow AR1 by the driving portion 211. In addition, a “U” -shaped support portion 213 is attached to the suction portion 70 side of the end portion of the arm portion 212. Further, a contact portion 214 that finely adjusts the position of the square substrate W by contacting the corner portion of the square substrate W is attached to the tip of the support portion 213 on the suction portion 70 side. Thereby, the position of the square substrate W can be adjusted to be within a certain range by controlling the drive unit 211 of each alignment mechanism 210 and adjusting the protruding amount of the arm unit 212.

<3.2. Substrate adsorption / desorption procedure by substrate processing equipment>
FIG. 11 to FIG. 13 are diagrams for explaining an adsorption procedure and a desorption procedure of the square substrate W in the substrate platform 3 of the present embodiment. Here, after the procedure for adsorbing the square substrate W to the adsorption unit 70 of the substrate platform 3 is described, the procedure for detaching the square substrate W adsorbed to the adsorption unit 70 will be described.

  By the way, when the square substrate W is lowered from the substrate delivery position to the holding surface 30 by the first elevating mechanism 73a and the second elevating mechanism 73b, the square substrate W delivered by the transport unit (not shown) is supported by the lift pins 71. If the position to be shifted is shifted, the position on which the square substrate W is placed on the holding surface 30 is shifted, which causes a processing failure. Therefore, in the suction processing of the present embodiment, the position of the square substrate W placed on the holding surface 30 is set within a predetermined range by the plurality of alignment mechanisms 210, thereby preventing processing failures from occurring. .

  First, the square substrate W delivered at the substrate delivery position is lowered to the holding surface 30 by driving the first elevating mechanism 73a and the second elevating mechanism 73b (see FIG. 11). At this time, since the vacuum pump 81 holds the stopped state, the square substrate W is not sucked by the suction unit 70. Also, the valve 82 continues to close.

  Next, with the vacuum pump 81 stopped, the valve 82 is opened, and nitrogen gas is discharged from the adsorption groove 75 (see FIG. 3) toward the lower surface of the square substrate W. At this time, since the square substrate W is not sucked by the suction portion 70, it floats in the positive direction of the Z axis (see FIG. 12).

  Subsequently, the movement amount of the arm portion 212 of each alignment mechanism 210 is adjusted, and the position of the square substrate W is finely adjusted by bringing the contact portion 214 into contact with the vicinity of the corner portion of the corresponding square substrate W (see FIG. 13). At this time, since the square substrate W is levitated by the nitrogen gas continuously discharged from the lower surface, the position of the square substrate W can be moved without damaging the lower surface of the square substrate W. The position of the substrate W can be within a certain range.

  When the fine adjustment of the position of the square substrate W is completed, the valve 82 is closed to stop the discharge of nitrogen gas, and the vacuum pump 81 is driven so that the space between the lower surface of the square substrate W and the holding surface 30 is increased. Exhaust the atmosphere. Then, the entire lower surface of the square substrate W is adsorbed by the adsorbing unit 70 and the adsorbing process is completed.

  Next, a procedure for attaching and detaching the square substrate W will be described. In the desorption means, after the resist coating process is completed by the substrate processing apparatus 1, the operation of the vacuum pump 81 is stopped and the vacuum pump 81 is opened to the atmosphere to release the suction state of the lower surface of the square substrate W.

  Subsequently, the valve 82 is opened, and nitrogen gas is discharged from the adsorption groove 75 toward the lower surface of the square substrate W. Thereby, the fixed state of the square substrate W can be released, but on the other hand, the position of the square substrate W may be shifted due to the gas pressure of the nitrogen gas.

  Subsequently, the valve 82 is kept open to float the square substrate W from the holding surface 30, and the amount of movement of the arm portion 212 of each alignment mechanism 210 is adjusted so that the contact portion 214 contacts the corresponding corner portion. The position of the square substrate W is finely adjusted by contact (see FIG. 13).

  By the way, when the position of the square substrate W is shifted due to the gas pressure of nitrogen gas, the position of the substrate received by the transport unit (not shown) is shifted at the substrate delivery position. Further, even in a post-process substrate processing apparatus that receives a substrate from the transport unit, the position of the square substrate W is shifted, which may cause a processing failure in the post-process substrate processing apparatus. Therefore, in the desorption process according to the present embodiment, the position of the square substrate W is set within a predetermined range by the alignment mechanism 210 after the nitrogen gas is discharged, thereby preventing a processing failure from occurring in the subsequent substrate processing apparatus. ing.

  When the fine adjustment of the position of the square substrate W is completed, the valve 82 is closed to stop the discharge of nitrogen gas, and the first lift mechanism 73a and the second lift mechanism 73b are driven, whereby the square substrate W is moved. The desorption process is completed by raising the holding surface 30 to the substrate delivery position.

<3.3. Advantages of Substrate Processing Apparatus According to Third Embodiment>
As described above, in the substrate processing apparatus 1 according to the third embodiment, even when the position of the square substrate W placed on the substrate platform 3 does not fall within the predetermined range, the plurality of alignment mechanisms 210. Therefore, it is possible to prevent the processing failure from occurring.

  Further, in the substrate processing apparatus 1 of the third embodiment, even when the position of the square substrate W is displaced by discharging nitrogen gas toward the lower surface of the square substrate W, a plurality of alignment mechanisms are used. The position of the square substrate W can be adjusted by 210 so as to be within a predetermined range. Therefore, it is possible to prevent a processing failure from occurring in the substrate processing apparatus in the subsequent process.

<4. Modification>
While the embodiments of the present invention have been described above, the present invention is not limited to the above examples.

(1) In the embodiment of the present invention, the suction grooves 75 and 175 are formed as grooves having a substantially linear shape on the suction portions 70 and 170, respectively. However, the present invention is not limited to this. It may be a curved shape.

(2) In the second embodiment, nitrogen gas is discharged upward from the adsorption grooves 175a and 175b, and in the third embodiment, nitrogen gas is discharged from the adsorption groove 75 upward. For example, argon or helium may be used as long as it is an inert gas.

(3) In the second embodiment, after the vacuum pump 181a is released into the atmosphere while keeping the vicinity of the edge of the square substrate W in a vacuum state, the vacuum pump 181a releases nitrogen gas from the adsorption groove 175b. Although it discharges, it is not limited to this. For example, when the displacement amount of the square substrate W falls within a predetermined range, nitrogen gas may be discharged from the adsorption groove 175b after the vacuum pump 181a and the vacuum pump 181b are released to the atmosphere.

(4) In the second embodiment, when only the vicinity of the central portion of the square substrate W reaches the holding surface 30, the vacuum pump 181a is not driven, but the present invention is limited to this. Instead, the driving of the vacuum pump 181a may be started when the driving of the vacuum pump 181b is started. Even if the driving of the vacuum pump 181a is started at any timing, the time required for the suction and the suction force are not affected.

(5) In the third embodiment, the suction processing of the square substrate W is performed by the suction unit 70 described in the first embodiment. However, the present invention is not limited to this. The square substrate W may be adsorbed by the adsorption unit 170 described in the form.

(6) In the third embodiment, the position of the square substrate W is finely adjusted by the plurality of alignment mechanisms 210. However, the hardware configuration of the alignment mechanism is not limited to this, For example, a hardware configuration such as an alignment mechanism 310 shown in FIG. 14 may be adopted.

  As shown in FIG. 14, unlike the alignment mechanism 210, each alignment mechanism 310 is disposed not at each corner portion of the square substrate W but at a position facing the side surface portion of the square substrate W. 311 and an arm portion 312. The arm portion 312 is provided so as to be movable in and out in a substantially normal direction of a corresponding side surface portion of the rectangular substrate W (that is, a direction intersecting substantially perpendicularly to the side surface portion) by operating the driving unit 311. Further, the distal end portion of the arm portion 212 on the suction portion 70 side is processed into a smooth shape (for example, a substantially semicircular shape) in order to prevent the side surface portion of the square substrate W from being damaged.

  Thereby, the drive part 311 of each alignment mechanism 310 is controlled, the protrusion amount of the arm part 312 is adjusted, and the position of the square board | substrate W is made to contact | abut the front-end | tip part 313 with the side part of the square board | substrate W. It can be adjusted to be within a certain range.

It is a perspective view which shows an example of a structure of the substrate processing apparatus in embodiment of this invention. It is a top view which shows an example of a structure of the substrate processing apparatus in the 1st Embodiment of this invention. It is a top view which shows an example of a structure of the adsorption | suction part in embodiment of this invention. It is a side view which shows an example of a structure of the board | substrate support part in the 1st Embodiment of this invention. It is a figure for demonstrating the adsorption | suction procedure and the raising procedure of the board | substrate in the board | substrate mounting part of the 1st Embodiment of this invention. It is a figure for demonstrating the adsorption | suction procedure of the board | substrate in the board | substrate mounting part of the 1st Embodiment of this invention, and the removal | desorption procedure. It is a figure for demonstrating the adsorption | suction procedure of the board | substrate in the board | substrate mounting part of the 1st Embodiment of this invention, and the removal | desorption procedure. It is a top view which shows an example of a structure of the board | substrate support part in the 2nd Embodiment of this invention. It is a side view which shows an example of a structure of the board | substrate mounting part in the 2nd Embodiment of this invention. It is a top view which shows an example of a structure of the substrate processing part in the 3rd Embodiment of this invention. It is a figure for demonstrating the adsorption | suction procedure and removal | desorption procedure of the board | substrate in the board | substrate mounting part of the 3rd Embodiment of this invention. It is a figure for demonstrating the adsorption | suction procedure and removal | desorption procedure of the board | substrate in the board | substrate mounting part of the 3rd Embodiment of this invention. It is a figure for demonstrating the adsorption | suction procedure and removal | desorption procedure of the board | substrate in the board | substrate mounting part of the 3rd Embodiment of this invention. It is a top view which shows an example of a structure of the substrate processing part in the 3rd Embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 3 Substrate mounting part 6 Control system 30 Holding surface 40 Nozzle support part 41 Slit nozzle 70, 170 Suction part 71 Lift pin 71a Edge lift pin 71b Center part lift pin 72 (72a, 72b) Suction holes 75, 175a, 175b Adsorption grooves 76, 176a, 176b Lattice points 81, 181a, 181b Vacuum pump 83 Nitrogen gas supply sources 210, 310 Alignment mechanism W Square substrate

Claims (11)

  1. A substrate processing apparatus for performing predetermined processing on a substrate,
    (a) suction means for sucking and holding the substrate placed on the suction surface of the substrate placement portion;
    (b) raising and lowering the substrate between the position of the suction surface and the substrate delivery position above the suction surface;
    (b-1) a first support portion that moves up and down while supporting the vicinity of the edge portion of the substrate;
    (b-2) a second support portion that supports the vicinity of the central portion of the substrate and is movable up and down independently of the first support portion;
    Elevating means having
    With
    The adsorption means includes
    (a-1) a plurality of suction grooves provided on the suction surface and communicated with each other within each section in whole or divided into a plurality of sections;
    (a-2) a plurality of suction holes connected to the plurality of suction grooves and penetrating the substrate mounting portion;
    (a-3) exhaust means connected to the plurality of suction holes and exhausting the vicinity of the suction surface;
    Have
    Among the plurality of suction grooves, the groove spacing between the edge suction grooves used for suction near the edge portion of the substrate is larger than the groove spacing between the center suction grooves used for suction near the center portion of the substrate. A substrate processing apparatus characterized by being narrow.
  2. The substrate processing apparatus according to claim 1,
    The edge suction grooves are connected to each other, and the center suction grooves are also connected to each other, while the edge suction grooves and the center suction grooves are in a disconnected state,
    The exhaust means includes
    A first exhaust part connected to an edge suction hole communicating with the edge suction groove among the plurality of suction holes, and exhausting an atmosphere between the vicinity of the edge of the substrate and the suction surface; ,
    Of the plurality of suction holes, connected to a central suction hole communicating with the central suction groove, and independently of the first exhaust part, an atmosphere between the vicinity of the central part of the substrate and the suction surface A second exhaust section for exhausting;
    A substrate processing apparatus comprising:
  3. The substrate processing apparatus according to claim 2,
    (c) an inert gas supply means which communicates with the central portion adsorption hole and supplies an inert gas to the adsorption portion via the central portion adsorption hole and the central portion adsorption groove;
    A substrate processing apparatus further comprising:
  4. A substrate processing apparatus for performing predetermined processing on a substrate,
    (a) a substrate mounting portion;
    (b) an alignment mechanism that adjusts the position of the substrate placed on the substrate placement unit to be within a predetermined range;
    (c) sucking and holding the substrate on the suction surface of the substrate mounting portion;
    (c-1) provided on the substrate side of the suction portion of the suction means, a plurality of suction grooves that are communicated with each other within each section in whole or divided into a plurality of sections;
    (c-2) a plurality of suction holes connected to the plurality of suction grooves and penetrating the substrate mounting portion;
    (c-3) an exhaust means connected to the plurality of suction holes and exhausting the vicinity of the suction surface;
    Adsorbing means having
    (d) communicating with the plurality of adsorption holes, an inert gas supply means for supplying an inert gas to the adsorption unit via the plurality of adsorption holes and the plurality of adsorption grooves;
    With
    Among the plurality of suction grooves, the groove spacing between the edge suction grooves used for suction near the edge portion of the substrate is larger than the groove spacing between the center suction grooves used for suction near the center portion of the substrate. A substrate processing apparatus characterized by being narrow.
  5. The substrate processing apparatus according to claim 1, wherein:
    The width | variety of each of these adsorption grooves is 2.0 mm or less, The substrate processing apparatus characterized by the above-mentioned.
  6. The substrate processing apparatus according to claim 1, wherein:
    At least one of the edge portion suction grooves is provided within 10.0 mm from a portion of the suction surface corresponding to the outer peripheral portion of the substrate.
  7. The substrate processing apparatus according to claim 6,
    The other one of the edge portion adsorbing grooves is provided in a range of 10.0 mm to 30.0 mm from the portion corresponding to the substrate outer peripheral portion of the adsorbing surface. apparatus.
  8. The substrate processing apparatus according to any one of claims 1 to 7,
    A substrate processing apparatus, wherein a groove interval between the central suction grooves is 100.0 mm or less.
  9. The substrate processing apparatus according to any one of claims 1 to 8,
    A slit nozzle for discharging a predetermined treatment liquid;
    Moving means for moving the slit nozzle relative to the substrate in order to discharge the processing liquid to the entire surface of the substrate held on the suction surface;
    A substrate processing apparatus further comprising:
  10. The substrate mounting portion is adsorbed by lifting means capable of moving up and down independently the first support portion supporting the vicinity of the edge portion of the substrate and the second support portion supporting the vicinity of the center portion of the substrate. A substrate processing method for attracting and holding a surface,
    The substrate placed on the suction surface is
    A plurality of suction grooves provided on the suction surface and communicating with each other within each section in whole or divided into a plurality of sections;
    A plurality of suction holes connected to the plurality of suction grooves and penetrating the substrate mounting portion;
    Exhaust means connected to the plurality of suction holes and exhausting the vicinity of the suction surface;
    Have
    Among the plurality of suction grooves, the groove spacing between the edge suction grooves used for suction near the edge portion of the substrate is larger than the groove spacing between the center suction grooves used for suction near the center portion of the substrate. Adsorbed by narrow adsorption means,
    (a) lowering the substrate by the first support portion and the second support portion to reach the vicinity of the central portion of the substrate to the suction surface;
    (b) When the vicinity of the central portion of the substrate reaches the suction surface or immediately before reaching,
    Starting an exhaust treatment near the adsorption surface;
    (c) lowering the substrate by the second support portion while performing the exhaust treatment, and causing the vicinity of the edge portion of the substrate to reach the suction surface;
    A substrate processing method comprising:
  11. The substrate processing method according to claim 10,
    ( d ) releasing the exhaust means to the atmosphere so that the vicinity of the adsorption surface on which the substrate is adsorbed is brought to a substantially atmospheric pressure;
    ( e ) after the releasing step, supplying an inert gas between the substrate lower surface and the adsorption surface;
    ( f ) an adjustment step of adjusting the position of the substrate placed on the substrate placement unit to be within a predetermined range;
    A substrate processing method, further comprising :
JP2003314209A 2003-09-05 2003-09-05 Substrate processing apparatus and substrate processing method Active JP4080401B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003314209A JP4080401B2 (en) 2003-09-05 2003-09-05 Substrate processing apparatus and substrate processing method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003314209A JP4080401B2 (en) 2003-09-05 2003-09-05 Substrate processing apparatus and substrate processing method
TW093121762A TWI244721B (en) 2003-09-05 2004-07-21 Substrate processing apparatus and substrate processing method
CNB2004100575931A CN1328780C (en) 2003-09-05 2004-08-23 Substrate treater and treating method
KR1020040069809A KR100591568B1 (en) 2003-09-05 2004-09-02 Substrate processing apparatus and substrate processing method

Publications (2)

Publication Number Publication Date
JP2005085881A JP2005085881A (en) 2005-03-31
JP4080401B2 true JP4080401B2 (en) 2008-04-23

Family

ID=34414899

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003314209A Active JP4080401B2 (en) 2003-09-05 2003-09-05 Substrate processing apparatus and substrate processing method

Country Status (4)

Country Link
JP (1) JP4080401B2 (en)
KR (1) KR100591568B1 (en)
CN (1) CN1328780C (en)
TW (1) TWI244721B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014036141A (en) * 2012-08-09 2014-02-24 Tazmo Co Ltd Adsorption surface plate

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7292428B2 (en) * 2005-04-26 2007-11-06 Applied Materials, Inc. Electrostatic chuck with smart lift-pin mechanism for a plasma reactor
CN100409424C (en) * 2005-04-26 2008-08-06 大日本网目版制造株式会社 Substrate processing device
KR100682739B1 (en) * 2005-08-12 2007-02-08 주식회사 아이피에스 Substrate lifting apparatus and method for dechucking substrate using the same
KR100943433B1 (en) * 2005-12-30 2010-02-19 주식회사 에이디피엔지니어링 Method Thereof Lifting and Glass Lifting Modules
JP4781867B2 (en) 2006-03-23 2011-09-28 大日本スクリーン製造株式会社 Heat treatment equipment
JP5117052B2 (en) * 2006-04-26 2013-01-09 株式会社オーク製作所 Exposure apparatus and exposure method
TW200817758A (en) * 2006-06-13 2008-04-16 Shibaura Mechatronics Corp Sticking and holding apparatus and sticking and holding method thereof
JP4795899B2 (en) * 2006-08-31 2011-10-19 東京エレクトロン株式会社 Substrate mounting mechanism and substrate delivery method
JP4799325B2 (en) * 2006-09-05 2011-10-26 東京エレクトロン株式会社 Substrate delivery apparatus, substrate processing apparatus, and substrate delivery method
JP5009101B2 (en) * 2006-10-06 2012-08-22 株式会社荏原製作所 Substrate polishing equipment
JP5044332B2 (en) * 2007-09-04 2012-10-10 大日本スクリーン製造株式会社 Processing equipment
JP4469006B2 (en) * 2007-09-25 2010-05-26 キヤノンアネルバ株式会社 Manufacturing method of display substrate
TWI439351B (en) * 2008-09-29 2014-06-01 Nitto Denko Corp Adsorption tablets
KR101004434B1 (en) * 2008-11-26 2010-12-28 세메스 주식회사 Substrate supporting unit, and apparatus and method for polishing substrate using the same
US20100184290A1 (en) * 2009-01-16 2010-07-22 Applied Materials, Inc. Substrate support with gas introduction openings
KR101011932B1 (en) 2009-06-25 2011-02-08 에이피시스템 주식회사 Apparatus for holding large substrate
WO2012108263A1 (en) * 2011-02-08 2012-08-16 シャープ株式会社 Substrate holding device and exposure device
CN102179881A (en) * 2011-04-01 2011-09-14 石金精密科技(深圳)有限公司 System for adsorbing and fixing plane thin plate
CN202257028U (en) * 2011-09-13 2012-05-30 深圳市华星光电技术有限公司 Lcd exposure platform device and exposure system
US8593613B2 (en) * 2011-09-13 2013-11-26 Shenzhen China Star Optoelectronics Technology Co., Ltd. LCD exposure stage device and exposure system
KR101389005B1 (en) * 2011-12-20 2014-04-28 삼성디스플레이 주식회사 Laser processing apparatus and control method thereof
JP5993710B2 (en) * 2012-10-26 2016-09-14 株式会社ディスコ Cleaning device and square plate work transfer method
CN103172271B (en) * 2013-03-15 2015-11-25 京东方科技集团股份有限公司 A kind of coating process
JP2015115528A (en) * 2013-12-13 2015-06-22 Ntn株式会社 Substrate processing device and substrate processing method
CN103913902A (en) * 2014-03-25 2014-07-09 京东方科技集团股份有限公司 Mask assembly device and mask assembly method
JP6535206B2 (en) * 2014-05-08 2019-06-26 株式会社ブイ・テクノロジー Exposure method and exposure apparatus
KR101958397B1 (en) * 2015-05-15 2019-03-15 주식회사 다원시스 An apparatus, method for depositing organic layer and an organic layer device
EP3391994A4 (en) * 2015-11-16 2019-11-27 Takatori Corporation Wire saw device, and processing method and processing device for workpiece
CN106915023A (en) * 2015-12-24 2017-07-04 中国科学院理化技术研究所 The vacuum pumping board that degasification is fixed in a kind of molding process for Liquid Injection
JP6591916B2 (en) * 2016-03-07 2019-10-16 株式会社ブイ・テクノロジー Mask manufacturing equipment
JP2019084625A (en) * 2017-11-07 2019-06-06 株式会社荏原製作所 Substrate polishing device and polishing method
CN109759721A (en) * 2018-12-28 2019-05-17 武汉华星光电技术有限公司 Cutting equipment and cutting method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06333799A (en) * 1993-05-21 1994-12-02 Toshiba Corp Semiconductor manufacturing device
JP3881062B2 (en) * 1996-08-14 2007-02-14 大日本スクリーン製造株式会社 Substrate holding mechanism and substrate processing apparatus
JPH1086085A (en) * 1996-09-19 1998-04-07 Dainippon Screen Mfg Co Ltd Substrate adsorption device and method
JP3509538B2 (en) * 1998-03-17 2004-03-22 松下電器産業株式会社 Chip pushing device
JP2002313902A (en) * 2001-04-18 2002-10-25 Canon Inc Electrostatic chuck and method of dismounting substrate therefrom

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014036141A (en) * 2012-08-09 2014-02-24 Tazmo Co Ltd Adsorption surface plate

Also Published As

Publication number Publication date
CN1591816A (en) 2005-03-09
KR20050024250A (en) 2005-03-10
KR100591568B1 (en) 2006-06-19
TW200518256A (en) 2005-06-01
JP2005085881A (en) 2005-03-31
CN1328780C (en) 2007-07-25
TWI244721B (en) 2005-12-01

Similar Documents

Publication Publication Date Title
TWI294639B (en) Stage equipment and coating processing equipment
JP4516354B2 (en) Parts supply method
KR101061707B1 (en) Coating film forming apparatus and coating film forming method
TWI529066B (en) Detaching apparatus and detaching method
JP4384504B2 (en) Substrate transfer device
JP6191721B2 (en) Conveying apparatus, conveying method, exposure apparatus, and device manufacturing method
KR100772353B1 (en) Pasted base board cutting system and base board cutting method
JP4197129B2 (en) Work transfer device
KR100252075B1 (en) Substrate processing device and method for substrate from the substrate processing device
JP4378301B2 (en) Substrate processing apparatus, substrate processing method, and substrate processing program
JP4305918B2 (en) Floating substrate transfer processing equipment
KR102072079B1 (en) Movable body apparatus, exposure apparatus, device manufacturing method, flat-panel display manufacturing method, and object exchange method
JP4553376B2 (en) Floating substrate transfer processing apparatus and floating substrate transfer processing method
JP4554397B2 (en) Stage device and coating treatment device
US20070175499A1 (en) Method for cleaning surfaces using parallel flow
JP4680657B2 (en) Substrate transfer system
KR100554365B1 (en) Apparatus for applying paste and method of applying paste
JP2004331265A (en) Floating unit and substrate inspection device
JP4418428B2 (en) Substrate floating device
JP4175988B2 (en) Substrate alignment apparatus, substrate processing apparatus, and substrate transfer apparatus
JP4571525B2 (en) Substrate processing apparatus and substrate processing method
JP4711770B2 (en) Conveying apparatus, vacuum processing apparatus, and conveying method
KR20130058596A (en) Bonding apparatus, bonding system, bonding method and computer-readable storage medium
JP5047545B2 (en) Levitation transport unit
JP2011199158A (en) Workpiece transfer method and workpiece transfer device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20051122

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070906

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070918

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071105

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071105

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20080205

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20080206

R150 Certificate of patent or registration of utility model

Ref document number: 4080401

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110215

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110215

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110215

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120215

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120215

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130215

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130215

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140215

Year of fee payment: 6

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250