JP4795899B2 - Substrate mounting mechanism and substrate delivery method - Google Patents

Substrate mounting mechanism and substrate delivery method Download PDF

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JP4795899B2
JP4795899B2 JP2006234723A JP2006234723A JP4795899B2 JP 4795899 B2 JP4795899 B2 JP 4795899B2 JP 2006234723 A JP2006234723 A JP 2006234723A JP 2006234723 A JP2006234723 A JP 2006234723A JP 4795899 B2 JP4795899 B2 JP 4795899B2
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substrate
processed
pins
lifting
mounting
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JP2008060285A (en
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昭彦 志村
直也 三枝
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to CNB2007101477802A priority patent/CN100536104C/en
Priority to TW096132291A priority patent/TWI409907B/en
Priority to KR1020070087506A priority patent/KR20080020555A/en
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Priority to KR1020090045538A priority patent/KR100993441B1/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65GTRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • B65G49/061Lifting, gripping, or carrying means, for one or more sheets forming independent means of transport, e.g. suction cups, transport frames
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303Apparatus specially adapted to the manufacture of LCDs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

Description

本発明は、フラットパネルディスプレイ(FPD)用ガラス基板等の可撓性を有する被処理基板を、載置台の載置面に対して突没する昇降ピンにより支持して載置台の上方の基板の受け渡しを行う受け渡し位置と載置台に載置された載置位置との間で昇降させる基板載置機構および基板受け渡し方法に関する。   In the present invention, a substrate to be processed having flexibility such as a glass substrate for a flat panel display (FPD) is supported by lift pins protruding and retracting with respect to a mounting surface of the mounting table. The present invention relates to a substrate placement mechanism and a substrate delivery method for raising and lowering between a delivery position for delivery and a placement position placed on a placement table.

FPDの製造プロセスにおいては、被処理基板であるFPD用のガラス基板に対して、ドライエッチングやスパッタリング、CVD(化学気相成長)等の各種処理が施される。このような処理は通常、チャンバー内に設けられた載置台にガラス基板を載置した状態で行われ、載置台に対する基板のローディングおよびアンローディングは一般的に、載置台の載置面に対して突没可能に設けられた複数の昇降ピンによって行われる。基板をローディングする際には、昇降ピンを上昇させて載置台の載置面から突出させ、搬送アーム等の搬送部材によって搬送された基板を昇降ピン上に移し替えた後、昇降ピンを下降させて載置台の載置面に没入させる。また、基板をアンローディングする際には、昇降ピンを上昇させて載置台の載置面から突出させ、基板を載置台から離間させた後、昇降ピン上の基板を搬送部材に移し替える。   In the FPD manufacturing process, various processes such as dry etching, sputtering, and CVD (chemical vapor deposition) are performed on an FPD glass substrate that is a substrate to be processed. Such processing is normally performed in a state where a glass substrate is mounted on a mounting table provided in the chamber, and generally loading and unloading of the substrate with respect to the mounting table is performed on the mounting surface of the mounting table. This is performed by a plurality of lifting pins provided so as to be able to project and retract. When loading a substrate, the lifting pins are raised to protrude from the mounting surface of the mounting table, and after the substrate transferred by the transfer member such as a transfer arm is transferred onto the lifting pins, the lifting pins are lowered. Then immerse it on the mounting surface of the mounting table. Further, when unloading the substrate, the lifting pins are raised to protrude from the mounting surface of the mounting table, and after separating the substrate from the mounting table, the substrate on the lifting pins is transferred to the transport member.

昇降ピンは、処理品質への影響を考慮してガラス基板の周縁部位置に設けることが好ましいが、近時、FPDの大型化が指向され、一辺が2mを超えるような巨大なガラス基板も出現するに至っており、周縁部位置の昇降ピンのみでは、このような大型のガラス基板を支持することが困難になってきている。   Elevating pins are preferably provided at the peripheral edge position of the glass substrate in consideration of the effect on processing quality. Recently, however, an increase in the size of the FPD has been aimed at, and a huge glass substrate having a side exceeding 2 m also appears. Therefore, it has become difficult to support such a large glass substrate only with the lifting pins at the peripheral edge positions.

このため、ガラス基板が大型の場合には、ガラス基板を確実に支持できるように中央部位置にも昇降ピンを設けることが行われているが(例えば特許文献1参照)、前述のように処理品質への影響を考慮すると、ガラス基板の中央部位置に設けられる昇降ピンは少数に制限せざるを得ない。この結果、図9(a)に示すように、ガラス基板Aが周縁部位置および中央部位置の昇降ピンB、Cによって支持されると、ガラス基板Aは、昇降ピンB、C間部分が窪むように撓み、中央部が盛り上がるように変形してしまい、図9(b)に示すように、ガラス基板Aが載置台Dに載置された際には、変形したガラス基板Aの中央部が載置台Dから浮き上がってしまうおそれがある。載置台は、処理時のガラス基板の温度を調整する温調機能を有している場合が多く、例えばプラズマエッチング装置では、載置台がプラズマエッチング処理時のガラス基板を冷却する役割を果たすため、ガラス基板の一部が載置台から浮き上がっていると、ガラス基板の温度が面内で不均一となって処理ムラ、例えばエッチングムラの発生の要因となる。
特開2002−246450号公報
For this reason, when the glass substrate is large, raising and lowering pins are also provided at the center position so that the glass substrate can be reliably supported (see, for example, Patent Document 1). Considering the influence on the quality, the number of lifting pins provided at the center position of the glass substrate must be limited to a small number. As a result, as shown in FIG. 9A, when the glass substrate A is supported by the lift pins B and C at the peripheral edge position and the center position, the glass substrate A has a concave portion between the lift pins B and C. When the glass substrate A is placed on the mounting table D as shown in FIG. 9B, the central portion of the deformed glass substrate A is placed. There is a risk of floating from the mounting table D. In many cases, the mounting table has a temperature control function of adjusting the temperature of the glass substrate during processing.For example, in a plasma etching apparatus, the mounting table plays a role of cooling the glass substrate during plasma etching processing. If a part of the glass substrate is lifted from the mounting table, the temperature of the glass substrate becomes non-uniform in the surface, causing processing unevenness, for example, etching unevenness.
JP 2002-246450 A

本発明は、このような事情に鑑みてなされたものであって、被処理基板が大型であっても、昇降ピンによって被処理基板を確実に支持しつつ被処理基板の変形を効果的に抑止することが可能な基板載置機構および基板受け渡し方法、このような基板載置機構を具備した基板処理装置、ならびにこのような基板受け渡し方法を実行させるための制御プログラムを記憶したコンピュータ読取可能な記憶媒体を提供することを目的とする。   The present invention has been made in view of such circumstances, and even when the substrate to be processed is large, the substrate to be processed is reliably restrained by the lifting pins and the deformation of the substrate to be processed is effectively suppressed. Substrate placement mechanism and substrate delivery method that can be performed, substrate processing apparatus equipped with such a substrate placement mechanism, and computer-readable storage storing a control program for executing such a substrate delivery method The purpose is to provide a medium.

上記課題を解決するために、本発明の第1の観点では、可撓性を有する被処理基板を載置する載置台と、前記載置台の載置面に対して突没自在に設けられ、被処理基板を支持して前記載置台の上方の基板の受け渡しを行う受け渡し位置と前記載置台上の載置位置との間で昇降させる複数の昇降ピンと、前記昇降ピンを駆動させる駆動機構とを具備する基板載置機構であって、前記複数の昇降ピンは、被処理基板の周縁部を支持する第1の昇降ピンと、被処理基板の中央部を支持する第2の昇降ピンとを有し、前記駆動機構は、被処理基板を昇降させる際に、前記第1の昇降ピンを前記第2の昇降ピンよりも高く突出させて、被処理基板が下に凸状に撓んだ状態で安定的に支持されるようにし、前記第1および第2の昇降ピンには、それぞれ、被処理基板の荷重を検出する荷重検出部が設けられ、前記各荷重検出部の検出結果に基づき、前記第1の昇降ピンと前記第2の昇降ピンとの突出高さの差が調整されることを特徴とする基板載置機構を提供する。 In order to solve the above-mentioned problem, in the first aspect of the present invention, a mounting table on which a substrate to be processed having flexibility is mounted and a mounting surface of the mounting table are provided so as to freely protrude and retract, A plurality of lift pins that lift and lower between a transfer position that supports the substrate to be processed and transfers the substrate above the mounting table, and a mounting position on the mounting table, and a drive mechanism that drives the lift pins The plurality of lifting pins include a first lifting pin that supports the peripheral portion of the substrate to be processed and a second lifting pin that supports the center portion of the substrate to be processed, When the substrate to be processed is moved up and down, the drive mechanism protrudes the first lift pin higher than the second lift pin and is stable in a state where the substrate to be processed is bent downward. so as to be supported, wherein the first and second lift pins, respectively, Load detecting unit for detecting a load of the processing substrate is provided, wherein on the basis of the detection result of the load detection unit, the difference in protrusion height between the first lift pin and the second lift pin are adjusted A substrate mounting mechanism is provided.

本発明の第1の観点において、前記駆動機構は、前記第1の昇降ピンと前記第2の昇降ピンとを独立して駆動させることが好ましい。   In the first aspect of the present invention, it is preferable that the driving mechanism drives the first elevating pin and the second elevating pin independently.

また、以上の本発明の第1の観点において、前記駆動機構による前記第1および第2の昇降ピンの駆動を制御する制御部を具備し、前記制御部は、前記載置位置の被処理基板を前記受け渡し位置に向けて上昇させている途中で、被処理基板が前記載置台との接触を保ったまま下に凸状に撓んだ状態のときに前記第1および第2の昇降ピンの突出方向への駆動を一旦停止させることが好ましい。あるいは、前記駆動機構による前記第1および第2の昇降ピンの駆動を制御する制御部を具備し、前記制御部は、前記載置位置の被処理基板を前記受け渡し位置に向けて上昇させている途中で、被処理基板が前記載置台との接触を保ったまま下に凸状に撓んだ状態のときに前記第1および第2の昇降ピンの突出方向への駆動を一旦停止させ、この駆動を再開させて被処理基板を前記載置台から離間させた後、前記第1および第2の昇降ピンを没入方向に駆動させ、被処理基板が下に凸状に撓んだまま前記載置台に接触した状態のときにこの駆動を停止させ、その後、前記第1および第2の昇降ピンを再び突出方向に駆動させることが好ましい。 Further, in the first aspect of the present invention described above, a control unit that controls driving of the first and second lifting pins by the driving mechanism is provided, and the control unit is a substrate to be processed at the placement position described above. Of the first and second lifting pins when the substrate to be processed is bent downward in a convex manner while maintaining contact with the mounting table. It is preferable to temporarily stop driving in the protruding direction. Alternatively, it includes a control unit that controls driving of the first and second lifting pins by the driving mechanism, and the control unit raises the substrate to be processed at the placement position toward the delivery position. On the way, when the substrate to be processed is bent downward while maintaining contact with the mounting table, the drive in the protruding direction of the first and second lifting pins is temporarily stopped. After the driving is resumed and the substrate to be processed is separated from the mounting table, the first and second lifting pins are driven in the immersion direction, and the processing substrate is bent downward in a convex shape. It is preferable to stop the driving when in contact with the first and second driving pins, and then drive the first and second lifting pins in the protruding direction again.

さらに、以上の本発明の第1の観点において、前記第1および第2の昇降ピンは、搬送部材によって下方から支持されて前記受け渡し位置に搬送された被処理基板を受け取るように構成されており、前記制御部は、前記第1および第2の昇降ピンが前記受け渡し位置に向けて突出方向に駆動している途中で、被処理基板が前記搬送部材との接触を保ったまま下に凸状に撓んだ状態のときに前記第1および第2の昇降ピンの突出方向への駆動を一旦停止させることが好ましい。あるいは、前記第1および第2の昇降ピンは、搬送部材によって下方から支持されて前記受け渡し位置に搬送された被処理基板を受け取るように構成されており、前記制御部は、前記第1および第2の昇降ピンが前記受け渡し位置に向けて突出方向に駆動している途中で、被処理基板が前記搬送部材との接触を保ったまま下に凸状に撓んだ状態のときに前記第1および第2の昇降ピンの突出方向への駆動を一旦停止させ、この駆動を再開させて被処理基板を前記搬送部材から離間させた後、前記第1および第2の昇降ピンを没入方向に駆動させ、被処理基板が下に凸状に撓んだまま前記搬送部材に接触した状態のときにこの駆動を停止させ、その後、前記第1および第2の昇降ピンを再び突出方向に駆動させることが好ましい。   Furthermore, in the first aspect of the present invention described above, the first and second lifting pins are configured to receive a substrate to be processed which is supported from below by a transport member and transported to the delivery position. The control unit has a convex shape downward while the substrate to be processed is kept in contact with the transport member while the first and second elevating pins are driven in the protruding direction toward the delivery position. It is preferable that the driving of the first and second elevating pins in the projecting direction is temporarily stopped when the first and second elevating pins are bent. Alternatively, the first and second lifting pins are configured to receive a substrate to be processed which is supported from below by a transport member and transported to the delivery position, and the control unit is configured to receive the first and second control pins. While the two lifting pins are driven in the projecting direction toward the delivery position, the first substrate is in a state where the substrate to be processed is bent in a convex shape while maintaining contact with the transport member. Then, the driving of the second lifting pins in the protruding direction is temporarily stopped, the driving is resumed to separate the substrate to be processed from the transport member, and then the first and second lifting pins are driven in the immersion direction. And stopping the driving when the substrate to be processed is in a state of being bent downward and contacting the transport member, and then driving the first and second lifting pins in the protruding direction again. Is preferred.

また、本発明の第2の観点では、被処理基板を収容する処理容器と、前記処理容器内に設けられた、被処理基板を載置する載置台を有する基板載置機構と、前記載置台に載置された被処理基板に対して所定の処理を施す処理機構と、を具備し、前記基板載置機構は、前記第1の観点の構成を有することを特徴とする基板処理装置を提供する。   Moreover, in the 2nd viewpoint of this invention, the substrate mounting mechanism which has the mounting base which mounts the to-be-processed substrate provided in the said processing container, the processing container which accommodates a to-be-processed substrate, The above-mentioned mounting base. A substrate processing apparatus, wherein the substrate mounting mechanism has the configuration of the first aspect. To do.

本発明の第2の観点において、前記処理機構は、前記処理容器内に処理ガスを供給するガス供給機構と、前記処理容器内を排気する排気機構と、前記処理容器内に前記処理ガスのプラズマを生成するプラズマ生成機構とを有し、被処理基板に対してプラズマ処理を施すことが好適である。   In the second aspect of the present invention, the processing mechanism includes a gas supply mechanism for supplying a processing gas into the processing container, an exhaust mechanism for exhausting the processing container, and a plasma of the processing gas in the processing container. It is preferable to perform plasma processing on the substrate to be processed.

また、本発明の第3の観点では、可撓性を有する被処理基板を載置する載置台の載置面に対して突没する複数の昇降ピンにより被処理基板を支持して前記載置台の上方の基板の受け渡しを行う受け渡し位置と前記載置台上の載置位置との間で昇降させる基板受け渡し方法であって、前記複数の昇降ピンを、被処理基板の周縁部を支持する第1の昇降ピンと、被処理基板の中央部を支持する第2の昇降ピンとから構成し、被処理基板を昇降させる際に、前記第1の昇降ピンを前記第2の昇降ピンよりも高く突出させて、被処理基板が下に凸状に撓んだ状態で安定的に支持されるようにし、前記第1および第2の昇降ピンにそれぞれ、被処理基板の荷重を検出する荷重検出部を設け、前記各荷重検出部の検出結果に基づき、前記第1の昇降ピンと前記第2の昇降ピンとの突出高さの差を調整することを特徴とする基板受け渡し方法を提供する。 According to a third aspect of the present invention, the mounting table is configured such that the substrate to be processed is supported by a plurality of lifting pins projecting and retracting with respect to the mounting surface of the mounting table on which the flexible substrate to be processed is mounted. A substrate delivery method for raising and lowering between a delivery position for delivering a substrate above and a placement position on the mounting table, wherein the plurality of raising and lowering pins support a peripheral portion of a substrate to be processed. When the substrate to be processed is moved up and down, the first lifting pin protrudes higher than the second lifting pin. The substrate to be processed is stably supported in a state where the substrate is bent downward, and each of the first and second lifting pins is provided with a load detection unit that detects the load of the substrate to be processed. , Based on the detection result of each load detection unit, Providing a substrate transfer method characterized by adjusting the difference in projected height between the serial second lift pins.

上の本発明の第3の観点において、前記載置位置の被処理基板を前記受け渡し位置に向けて上昇させている途中で、被処理基板が前記載置台との接触を保ったまま下に凸状に撓んだ状態のときに前記第1および第2の昇降ピンの突出方向への駆動を一旦停止させることが好ましい。あるいは、前記載置位置の被処理基板を前記受け渡し位置に向けて上昇させている途中で、被処理基板が前記載置台との接触を保ったまま下に凸状に撓んだ状態のときに前記第1および第2の昇降ピンの突出方向への駆動を一旦停止させ、この駆動を再開させて被処理基板を前記載置台から離間させた後、前記第1および第2の昇降ピンを没入方向に駆動させ、被処理基板が下に凸状に撓んだまま前記載置台に接触した状態のときにこの駆動を停止させ、その後、前記第1および第2の昇降ピンを再び突出方向に駆動させることが好ましい。 In a third aspect of the present invention on the following, the way that a substrate to be processed in the placement position is raised toward the transfer position, the lower left target substrate is kept in contact with the mounting table It is preferable that the driving of the first and second lifting pins in the projecting direction is temporarily stopped when in a convexly bent state. Alternatively, when the substrate to be processed at the mounting position is being raised toward the delivery position, the substrate to be processed is bent downward while maintaining contact with the mounting table. The driving of the first and second lifting pins in the protruding direction is temporarily stopped, the driving is restarted to separate the substrate to be processed from the mounting table, and then the first and second lifting pins are immersed. The driving is stopped when the substrate to be processed is in a state of contacting the mounting table while the substrate to be processed is bent downward, and then the first and second lifting pins are moved again in the protruding direction. It is preferable to drive.

さらに、以上の本発明の第3の観点において、前記第1および第2の昇降ピンを、搬送部材によって下方から支持されて前記受け渡し位置に搬送された被処理基板を受け取るように構成し、前記第1および第2の昇降ピンが前記受け渡し位置に向けて突出方向に駆動している途中で、被処理基板が前記搬送部材との接触を保ったまま下に凸状に撓んだ状態のときに前記第1および第2の昇降ピンの突出方向への駆動を一旦停止させることが好ましい。あるいは、前記第1および第2の昇降ピンを、搬送部材によって下方から支持されて前記受け渡し位置に搬送された被処理基板を受け取るように構成し、前記第1および第2の昇降ピンが前記受け渡し位置に向けて突出方向に駆動している途中で、被処理基板が前記搬送部材との接触を保ったまま下に凸状に撓んだ状態のときに前記第1および第2の昇降ピンの突出方向への駆動を一旦停止させ、この駆動を再開させて被処理基板を前記搬送部材から離間させた後、前記第1および第2の昇降ピンを没入方向に駆動させ、被処理基板が下に凸状に撓んだまま前記搬送部材に接触した状態のときにこの駆動を停止させ、その後、前記第1および第2の昇降ピンを再び突出方向に駆動させることが好ましい。   Furthermore, in the above third aspect of the present invention, the first and second lifting pins are configured to receive a substrate to be processed which is supported from below by a transport member and transported to the delivery position, While the first and second lifting pins are driven in the protruding direction toward the delivery position, the substrate to be processed is bent downward in a convex shape while maintaining contact with the transport member. Further, it is preferable that the driving of the first and second lifting pins in the protruding direction is temporarily stopped. Alternatively, the first and second lifting pins are configured to receive a substrate to be processed that is supported from below by a transport member and transported to the delivery position, and the first and second lifting pins are configured to receive the delivery. While the substrate is being driven in the protruding direction toward the position, the first and second lifting pins are in a state where the substrate to be processed is bent in a convex shape while maintaining contact with the transport member. The driving in the protruding direction is temporarily stopped, the driving is resumed to separate the substrate to be processed from the transport member, and then the first and second lifting pins are driven in the immersion direction so that the substrate to be processed is lowered. It is preferable to stop the driving when the conveying member is in a state of being bent in a convex shape and then drive the first and second lifting pins in the protruding direction again.

さらに、本発明の第4の観点では、コンピュータ上で動作する制御プログラムが記憶されたコンピュータ読取可能な記憶媒体であって、前記制御プログラムは、実行時に前記の基板受け渡し方法が行われるように、コンピュータに処理装置を制御させることを特徴とするコンピュータ読取可能な記憶媒体を提供する。   Furthermore, according to a fourth aspect of the present invention, there is provided a computer-readable storage medium storing a control program that operates on a computer, and the control program is performed so that the substrate delivery method is performed at the time of execution. A computer-readable storage medium characterized by causing a computer to control a processing device is provided.

本発明によれば、複数の昇降ピンを、被処理基板の周縁部を支持する第1の昇降ピンと、被処理基板の中央部を支持する第2の昇降ピンとから構成し、被処理基板を昇降させる際に、前記第1の昇降ピンを前記第2の昇降ピンよりも高く突出させて、被処理基板が下に凸状に撓んだ状態で安定的に支持されるようにしたため、被処理基板が大型であっても、第1および第2の昇降ピンによって被処理基板を確実に支持することができるとともに、第1および第2の昇降ピン間部分の自重による撓みならびに第2の昇降ピンの支持反力に起因する被処理基板の変形を効果的に抑止することができる。したがって、載置台に対する被処理基板の浮き上がりを抑えて処理ムラの発生を抑止することが可能となる。   According to the present invention, the plurality of lifting pins are constituted by the first lifting pins that support the peripheral portion of the substrate to be processed and the second lifting pins that support the center portion of the substrate to be processed, and the substrate to be processed is lifted or lowered. When the first raising / lowering pin protrudes higher than the second raising / lowering pin, the substrate to be processed is stably supported in a state of being bent downward, so that the processing target is processed. Even if the substrate is large, the substrate to be processed can be reliably supported by the first and second lifting pins, and the bending between the first and second lifting pins due to its own weight and the second lifting pins The deformation of the substrate to be processed due to the support reaction force can be effectively suppressed. Accordingly, it is possible to suppress the occurrence of processing unevenness by suppressing the floating of the substrate to be processed with respect to the mounting table.

以下、添付図面を参照しながら本発明の実施の形態について説明する。
図1は本発明に係る基板載置機構を備えた基板処理装置の一実施形態であるプラズマエッチング装置の側面方向の概略断面図であり、図2はその平面方向の概略断面図である。
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
FIG. 1 is a schematic sectional view of a plasma etching apparatus as an embodiment of a substrate processing apparatus provided with a substrate mounting mechanism according to the present invention, and FIG. 2 is a schematic sectional view of a planar direction thereof.

このプラズマエッチング装置1は、FPD用のガラス基板(以下、単に「基板」と記す)Gに対してエッチングを行う容量結合型平行平板プラズマエッチング装置として構成されている。FPDとしては、液晶ディスプレイ(LCD)、エレクトロルミネセンス(Electro Luminescence;EL)ディスプレイ、プラズマディスプレイパネル(PDP)等が例示される。プラズマエッチング装置1は、基板Gを収容する処理容器としてのチャンバー2を備えている。チャンバー2は、例えば、表面がアルマイト処理(陽極酸化処理)されたアルミニウムからなり、基板Gの形状に対応して四角筒形状に形成されている。   The plasma etching apparatus 1 is configured as a capacitively coupled parallel plate plasma etching apparatus that performs etching on an FPD glass substrate (hereinafter simply referred to as “substrate”) G. Examples of the FPD include a liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display panel (PDP), and the like. The plasma etching apparatus 1 includes a chamber 2 as a processing container that accommodates the substrate G. The chamber 2 is made of, for example, aluminum whose surface is anodized (anodized), and is formed in a square tube shape corresponding to the shape of the substrate G.

チャンバー2内の底壁には、基板Gを載置する載置台としてのサセプタ4が設けられている。サセプタ4は、基板Gの形状に対応して四角板状または柱状に形成されており、金属等の導電性材料からなる基材4aと、基材4aの周縁を覆う絶縁材料からなる絶縁部材4bと、基材4aおよび絶縁部材4bの底部を覆うように設けられてこれらを支持する絶縁材料からなる絶縁部材4cとを有している。基材4aには、高周波電力を供給するための給電線23が接続されており、この給電線23には整合器24および高周波電源25が接続されている。高周波電源25からは例えば13.56MHzの高周波電力がサセプタ4に印加され、これにより、サセプタ4が下部電極として機能するように構成されている。また、サセプタ4には、載置された基板Gを吸着するための図示しない静電吸着機構が内蔵されている。   A susceptor 4 as a mounting table on which the substrate G is mounted is provided on the bottom wall in the chamber 2. The susceptor 4 is formed in a square plate shape or a column shape corresponding to the shape of the substrate G, and a base material 4a made of a conductive material such as metal and an insulating member 4b made of an insulating material covering the periphery of the base material 4a. And an insulating member 4c made of an insulating material provided so as to cover the bottoms of the base member 4a and the insulating member 4b and supporting them. A power supply line 23 for supplying high-frequency power is connected to the base material 4a, and a matching unit 24 and a high-frequency power source 25 are connected to the power supply line 23. For example, high frequency power of 13.56 MHz is applied to the susceptor 4 from the high frequency power supply 25, and thereby, the susceptor 4 is configured to function as a lower electrode. The susceptor 4 has a built-in electrostatic adsorption mechanism (not shown) for adsorbing the placed substrate G.

チャンバー2の上部または上壁には、チャンバー2内に処理ガスを供給するとともに上部電極として機能するシャワーヘッド11が、サセプタ4と対向するように設けられている。シャワーヘッド11は、内部に処理ガスを拡散させるガス拡散空間12が形成されているとともに、下面またはサセプタ4との対向面に処理ガスを吐出する複数の吐出孔13が形成されている。このシャワーヘッド11は接地されており、サセプタ4とともに一対の平行平板電極を構成している。   A shower head 11 that supplies a processing gas into the chamber 2 and functions as an upper electrode is provided on the upper or upper wall of the chamber 2 so as to face the susceptor 4. In the shower head 11, a gas diffusion space 12 for diffusing the processing gas is formed therein, and a plurality of discharge holes 13 for discharging the processing gas are formed on the lower surface or the surface facing the susceptor 4. The shower head 11 is grounded and forms a pair of parallel plate electrodes together with the susceptor 4.

シャワーヘッド11の上面にはガス導入口14が設けられ、このガス導入口14には、処理ガス供給管15が接続されており、この処理ガス供給管15には、バルブ16およびマスフローコントローラ17を介して、処理ガス供給源18が接続されている。処理ガス供給源18からは、エッチングのための処理ガスが供給される。処理ガスとしては、ハロゲン系のガス、Oガス、Arガス等、通常この分野で用いられるガスを用いることができる。 A gas inlet 14 is provided on the upper surface of the shower head 11, and a processing gas supply pipe 15 is connected to the gas inlet 14. A valve 16 and a mass flow controller 17 are connected to the processing gas supply pipe 15. A processing gas supply source 18 is connected to the via. A processing gas for etching is supplied from the processing gas supply source 18. As the processing gas, a gas usually used in this field, such as a halogen-based gas, an O 2 gas, or an Ar gas, can be used.

チャンバー2の底壁には排気管19が接続されており、この排気管19には排気装置20が接続されている。排気装置20はターボ分子ポンプなどの真空ポンプを備えており、これによりチャンバー2内を所定の減圧雰囲気まで真空引き可能なように構成されている。チャンバー2の側壁には、基板Gを搬入出するための搬入出口21が形成されているとともに、この搬入出口21を開閉するゲートバルブ22が設けられており、搬入出口21の開放時に、基板Gが、搬送部材としての搬送アーム40(図2、4の仮想線参照)により下方から支持された状態で隣接する図示しないロードロック室との間で搬送されるように構成されている。   An exhaust pipe 19 is connected to the bottom wall of the chamber 2, and an exhaust device 20 is connected to the exhaust pipe 19. The exhaust device 20 includes a vacuum pump such as a turbo molecular pump, and is configured so that the inside of the chamber 2 can be evacuated to a predetermined reduced pressure atmosphere. A loading / unloading port 21 for loading / unloading the substrate G is formed on the side wall of the chamber 2, and a gate valve 22 for opening / closing the loading / unloading port 21 is provided. However, it is comprised so that it may convey between the load lock chambers which are not shown in figure in the state supported from the downward direction by the conveyance arm 40 (refer virtual line of FIG. 2, 4) as a conveyance member.

サセプタ4の基板載置面には、プラズマエッチング処理時にサセプタ4に載置されて吸着された基板Gを冷却するHeガス等の温調ガスが充填される図示しない冷却空間が形成されており、サセプタ4内を通ってチャンバー2の底壁を貫通するように、この冷却空間に温調ガスを供給するための温調ガス供給ライン41が設けられている。温調ガス供給ライン41には、温調ガス供給源42が接続されているとともに、温調ガスの供給圧を調整するための圧力制御バルブ43が設けられている。   On the substrate mounting surface of the susceptor 4 is formed a cooling space (not shown) filled with a temperature control gas such as He gas that cools the substrate G placed on the susceptor 4 and adsorbed during the plasma etching process. A temperature control gas supply line 41 for supplying temperature control gas to the cooling space is provided so as to pass through the bottom wall of the chamber 2 through the susceptor 4. A temperature control gas supply source 42 is connected to the temperature control gas supply line 41, and a pressure control valve 43 for adjusting the supply pressure of the temperature control gas is provided.

チャンバー2の底壁およびサセプタ4には、これらを貫通する挿通孔7a、7bが、サセプタ4の周縁部位置および中央部位置(周縁部位置よりも内側または中央寄り位置)にそれぞれ形成されている。挿通孔7aは、例えば、各辺部に所定の間隔をあけて2箇所ずつの計8箇所形成され、挿通孔7bは、例えば、サセプタ4の対向する一対の辺と平行に配列されるように所定の間隔をあけて2箇所形成されている。挿通孔7a、7bにはそれぞれ、基板Gを下方から支持して昇降させるリフターピン8a、8b(第1および第2の昇降ピン)がサセプタ4の基板載置面に対して突没可能に挿入されている。リフターピン8a、8bはそれぞれ、突出時に基板Gの周縁部および中央部に当接するように設けられており、図示しない位置決め用ブッシュによって径方向または幅方向に位置決めされて挿通孔7a、7b内に挿入されている。   In the bottom wall of the chamber 2 and the susceptor 4, insertion holes 7 a and 7 b penetrating therethrough are formed at the peripheral edge position and the central position (inner side or central position relative to the peripheral edge position) of the susceptor 4, respectively. . The insertion holes 7a are formed, for example, at a total of eight positions, each having a predetermined interval on each side, and the insertion holes 7b are arranged in parallel with, for example, a pair of opposing sides of the susceptor 4. Two places are formed at predetermined intervals. Lifter pins 8a and 8b (first and second raising and lowering pins) for raising and lowering the substrate G from below are inserted into the insertion holes 7a and 7b so as to protrude and retract with respect to the substrate mounting surface of the susceptor 4. Has been. The lifter pins 8a and 8b are provided so as to come into contact with the peripheral edge portion and the central portion of the substrate G when protruding, and are positioned in the radial direction or the width direction by a positioning bush (not shown) to be inserted into the insertion holes 7a and 7b. Has been inserted.

図3は基板載置機構の概略図である。
リフターピン8a、8bはそれぞれ、図3に示すように、下部がチャンバー2の外側に突出しており、下端部が駆動部9a、9bに接続され、この駆動部9a、9bの駆動によって昇降することによりサセプタ4の基板載置面に対して突出および没入するように構成されている。駆動部9a、9bはそれぞれ、例えばステッピングモータを用いて構成される。
FIG. 3 is a schematic view of the substrate mounting mechanism.
As shown in FIG. 3, each of the lifter pins 8a and 8b has a lower portion protruding outside the chamber 2, and a lower end portion connected to the drive portions 9a and 9b, and is lifted and lowered by driving the drive portions 9a and 9b. Thus, the susceptor 4 is configured to protrude and immerse with respect to the substrate mounting surface. Each of the drive units 9a and 9b is configured using, for example, a stepping motor.

リフターピン8a、8bの下部にはそれぞれ、フランジ26が形成されており、各フランジ26には、リフターピン8a、8bを囲繞するように設けられた伸縮可能なベローズ27の一端部(下端部)が接続され、このベローズ27の他端部(上端部)は、チャンバー2の底壁に接続されている。これにより、ベローズ27は、リフターピン8a、8bの昇降に追従して伸縮するとともに、挿通孔7a、7bとリフターピン8a、8bとの隙間を密封している。   Flange 26 is formed in each lower part of lifter pins 8a and 8b, and one end part (lower end part) of bellows 27 which can be expanded and contracted provided in each flange 26 so that lifter pins 8a and 8b may be surrounded. The other end (upper end) of the bellows 27 is connected to the bottom wall of the chamber 2. As a result, the bellows 27 expands and contracts following the lifting and lowering of the lifter pins 8a and 8b, and seals the gap between the insertion holes 7a and 7b and the lifter pins 8a and 8b.

駆動部9a、9bの駆動は、マイクロプロセッサ(コンピュータ)を備えたコントローラ31によって別個に制御される構成となっており、これにより、リフターピン8aとリフターピン8bとは独立して昇降可能に構成されている。コントローラ31には、工程管理者が駆動部9a、9bの駆動を管理するためにコマンドの入力操作等を行うキーボードや、駆動部9a、9bの駆動状況を可視化して表示するディスプレイ等からなるユーザーインターフェイス32と、駆動部9a、9bの駆動をコントローラ31の制御にて実現するための制御プログラムや駆動条件データ等が記録されたレシピが格納された記憶部33とが接続されている。そして、必要に応じて、ユーザーインターフェイス32からの指示等にて任意のレシピを記憶部33から呼び出してコントローラ31に実行させることで、コントローラ31の制御下で駆動部9a、9bの駆動および停止が行われる。前記レシピは、例えば、CD−ROM、ハードディスク、フラッシュメモリなどのコンピュータ読み取り可能な記憶媒体に格納された状態のものを利用したり、あるいは、他の装置から、例えば専用回線を介して随時伝送させて利用したりすることも可能である。   The drive of the drive units 9a and 9b is configured to be controlled separately by a controller 31 having a microprocessor (computer), whereby the lifter pin 8a and the lifter pin 8b can be lifted and lowered independently. Has been. The controller 31 includes a keyboard on which a process manager manages the drive of the drive units 9a and 9b and a display for visualizing and displaying the drive status of the drive units 9a and 9b. The interface 32 is connected to a storage unit 33 in which a control program for realizing driving of the drive units 9a and 9b by control of the controller 31 and a recipe in which drive condition data is recorded is stored. If necessary, an arbitrary recipe is called from the storage unit 33 by an instruction from the user interface 32 and is executed by the controller 31 so that the drive units 9a and 9b are driven and stopped under the control of the controller 31. Done. For example, the recipe is stored in a computer-readable storage medium such as a CD-ROM, a hard disk, or a flash memory, or is transmitted from another device at any time via, for example, a dedicated line. It is also possible to use it.

コントローラ31、ユーザーインターフェイス32および記憶部33は、駆動部9a、9bによるリフターピン8a、8bの昇降を制御する制御部を構成し、サセプタ4、リフターピン8a、8b、駆動部9a、9bおよび制御部は基板載置機構を構成する。   The controller 31, the user interface 32, and the storage unit 33 constitute a control unit that controls the lifting and lowering of the lifter pins 8a and 8b by the drive units 9a and 9b, and the susceptor 4, the lifter pins 8a and 8b, the drive units 9a and 9b, and the control. The unit constitutes a substrate mounting mechanism.

このように構成されたプラズマエッチング装置1においては、まず、ゲートバルブ22によって搬入出口21が開放された状態で、基板Gが搬送アーム40(図2、4の仮想線参照)によって搬入出口21から搬入されてサセプタ4の上方まで搬送されたら、各リフターピン8a、8bを上昇させて搬送アーム40よりも高く突出させる。なお、各リフターピン8a、8bと搬送アーム40とは互いに接触しないように設けられている。これにより、基板Gが、搬送アーム40上からリフターピン8a、8b上に移し換えられる。この際に、前述のように、基板Gの荷重が各リフターピン8a、8bに分散するように、リフターピン8aをリフターピン8bよりも所定量高く位置させ、基板Gを下に凸状に撓ませた状態で各リフターピン8a、8bによって支持させる。搬送アーム40が搬入出口21からチャンバー2外に退出したら、ゲートバルブ22によって搬入出口21を閉塞するとともに、リフターピン8aをリフターピン8bよりも所定量高い位置に保ちながらリフターピン8a、8bを下降させる。そして、リフターピン8b、リフターピン8aの順にサセプタ4の載置面に没入させ、基板Gをサセプタ4に載置させる。基板Gの荷重は各リフターピン8a、8bにバランスよく分散されていたため、基板Gは、リフターピン8a、8bの支持反力による変形、特にリフターピン8bによる中央部の変形が抑止され、全面またはほぼ全面にわたってサセプタ4の載置面に接触することができる。   In the plasma etching apparatus 1 configured as described above, first, the substrate G is moved from the loading / unloading port 21 by the transfer arm 40 (see the phantom line in FIGS. 2 and 4) in a state where the loading / unloading port 21 is opened by the gate valve 22. After being carried in and transported to above the susceptor 4, the lifter pins 8 a and 8 b are raised and protruded higher than the transport arm 40. The lifter pins 8a and 8b and the transport arm 40 are provided so as not to contact each other. As a result, the substrate G is transferred from the transfer arm 40 onto the lifter pins 8a and 8b. At this time, as described above, the lifter pin 8a is positioned higher than the lifter pin 8b by a predetermined amount so that the load of the substrate G is distributed to the lifter pins 8a and 8b, and the substrate G is bent downwardly. In this state, the lifter pins 8a and 8b are supported. When the transfer arm 40 moves out of the chamber 2 from the loading / unloading port 21, the loading / unloading port 21 is closed by the gate valve 22, and the lifting pins 8a and 8b are lowered while keeping the lifting pin 8a at a position higher than the lifting pin 8b by a predetermined amount. Let Then, the lifter pin 8 b and the lifter pin 8 a are immersed in the placement surface of the susceptor 4 in this order, and the substrate G is placed on the susceptor 4. Since the load of the substrate G was distributed in a balanced manner to the lifter pins 8a and 8b, the substrate G was prevented from being deformed by the support reaction force of the lifter pins 8a and 8b, particularly the deformation of the central portion by the lifter pins 8b. The mounting surface of the susceptor 4 can be contacted over almost the entire surface.

ゲートバルブ22によって搬入出口21を閉塞し、サセプタ4に基板Gを載置したら、排気装置20によってチャンバー2内を所定の真空度まで真空引きする。次に、処理ガス供給源18から処理ガスを、マスフローコントローラ17によって流量調整しつつ、処理ガス供給管15、ガス導入口14およびシャワーヘッド11を介してチャンバー2内に供給し、この状態で、静電吸着機構に直流電圧を印加して基板Gをサセプタ4に吸着させる。   When the loading / unloading port 21 is closed by the gate valve 22 and the substrate G is placed on the susceptor 4, the inside of the chamber 2 is evacuated to a predetermined vacuum level by the exhaust device 20. Next, the process gas is supplied from the process gas supply source 18 into the chamber 2 through the process gas supply pipe 15, the gas inlet 14, and the shower head 11 while adjusting the flow rate by the mass flow controller 17. A DC voltage is applied to the electrostatic adsorption mechanism to adsorb the substrate G to the susceptor 4.

そして、高周波電源25から整合器24を介してサセプタ4に高周波電力を印加し、下部電極としてのサセプタ4と上部電極としてのシャワーヘッド11との間に高周波電界を生じさせてチャンバー2内の処理ガスをプラズマ化させるとともに、基板Gの温度変化、例えば温度上昇を回避するために、温調ガス供給源42からの温調ガスを、圧力制御バルブ43によって所定の圧力に調整しつつ、温調ガス供給ライン41を介してサセプタ4に吸着された基板Gの裏面側の冷却空間に導入する。この状態で、処理ガスのプラズマによって基板Gにエッチング処理が施される。   Then, high frequency power is applied to the susceptor 4 from the high frequency power supply 25 through the matching unit 24, and a high frequency electric field is generated between the susceptor 4 as the lower electrode and the shower head 11 as the upper electrode, thereby processing in the chamber 2. While the gas is turned into plasma, the temperature control gas from the temperature control gas supply source 42 is adjusted to a predetermined pressure by the pressure control valve 43 in order to avoid a temperature change of the substrate G, for example, a temperature rise. The gas is introduced into a cooling space on the back side of the substrate G adsorbed by the susceptor 4 through the gas supply line 41. In this state, the substrate G is etched by the plasma of the processing gas.

基板Gにエッチング処理を施したら、高周波電源25からの高周波電力の印加を停止するとともに、処理ガスおよび温調ガスの導入を停止し、さらに、静電吸着機構による基板Gの吸着を解除する。次に、ゲートバルブ22によって搬入出口21を開放するとともに、搬送アーム40からの基板Gの受け取り時と同様に、リフターピン8a、8bを上昇させ、基板Gを下に凸状に撓ませてサセプタ4から上方に離間させる。その後、搬送アーム40が搬入出口21からチャンバー2内に進入してきたら、リフターピン8a、8bを下降させる。これにより、基板Gが、リフターピン8a、8b上から搬送アーム40上に移し換えられる。そして、基板Gは、搬送アーム40によって搬入出口21からチャンバー2外に搬出されることとなる。   When the etching process is performed on the substrate G, the application of the high frequency power from the high frequency power supply 25 is stopped, the introduction of the processing gas and the temperature control gas is stopped, and the adsorption of the substrate G by the electrostatic adsorption mechanism is released. Next, the loading / unloading port 21 is opened by the gate valve 22, and the lifter pins 8 a and 8 b are raised as in the case of receiving the substrate G from the transfer arm 40, and the substrate G is bent downward to form a susceptor. 4 away from the top. Thereafter, when the transfer arm 40 enters the chamber 2 from the loading / unloading port 21, the lifter pins 8a and 8b are lowered. As a result, the substrate G is transferred from the lifter pins 8a and 8b onto the transfer arm 40. Then, the substrate G is carried out of the chamber 2 from the loading / unloading port 21 by the transfer arm 40.

本実施形態では、リフターピン8aをリフターピン8bよりも所定量高く配置して基板Gを下に凸状に撓ませた状態で支持することにより、リフターピン8a、8b間部分の撓みならびにリフターピン8bの支持反力による基板Gの変形を抑止して、下部電極として機能するサセプタ4に対する基板Gの浮き上がりを抑止することができるため、プラズマエッチング処理時にサセプタ4から供給される温調ガスによって基板Gを全面にわたってほぼ均等に冷却することができ、これにより、エッチングムラの発生を効果的に抑止することが可能となる。また、エッチング処理後も同様に、リフターピン8aをリフターピン8bよりも所定量高く配置して基板Gを下に凸状に撓ませた状態で支持することにより、リフターピン8bの支持反力による基板Gの変形を抑止することができるため、エッチングの後処理の品質も高めることが可能となる。   In the present embodiment, the lifter pin 8a is disposed higher than the lifter pin 8b by a predetermined amount, and is supported in a state where the substrate G is bent in a convex shape, thereby bending the portion between the lifter pins 8a and 8b and the lifter pin. Since the deformation of the substrate G due to the support reaction force of 8b can be suppressed, and the floating of the substrate G with respect to the susceptor 4 functioning as the lower electrode can be suppressed, the substrate is controlled by the temperature control gas supplied from the susceptor 4 during the plasma etching process. G can be cooled almost uniformly over the entire surface, thereby making it possible to effectively suppress the occurrence of etching unevenness. Similarly, after the etching process, the lifter pin 8a is disposed higher than the lifter pin 8b by a predetermined amount, and the substrate G is supported in a state of being bent downwardly, thereby supporting the lifter pin 8b. Since the deformation of the substrate G can be suppressed, the quality of post-processing of etching can be improved.

次に、リフターピン8a、8bによる搬送アーム40およびサセプタ4からの基板Gの受け取りの一例について説明する。   Next, an example of receiving the substrate G from the transfer arm 40 and the susceptor 4 by the lifter pins 8a and 8b will be described.

図5はリフターピン8a、8bによる搬送アーム40からの基板Gの受け取り態様を説明するための図である。
搬送アーム40によって搬送された基板Gは、この搬送アーム40に吸着している場合がある。この場合に、リフターピン8a、8bを一気に上昇させて搬送アーム40から基板Gを受け取ろうとすると、基板Gが吸着していた搬送アーム40から剥がれた際に衝撃を受けて大きく振動し、位置ずれを起こしたり破損したりするおそれがある。そこで、リフターピン8a、8bによって搬送アーム40から基板Gを受け取る際には、まず、図5(a)に示すように、リフターピン8aがリフターピン8bよりも所定量高く配置されるように、リフターピン8a、8bを上昇させ、図5(b)に示すように、基板Gが搬送アーム40との接触を保ったままリフターピン8aに当接して下に凸状に撓んだ状態、より好ましくは基板Gが搬送アーム40から離れる直前の状態のときに、リフターピン8a、8bの上昇を一旦停止させる。これにより、基板Gが搬送アーム40に吸着していた場合であっても、徐々に基板Gを搬送アーム40から剥がすため、基板Gの振動を抑えることができる。そして、図5(c)に示すように、リフターピン8a、8bの上昇を再開させ、基板Gを搬送アーム40から離間させる。これにより、基板Gを搬送アーム40上からリフターピン8a、8b上に安全に移し替えることが可能となる。
FIG. 5 is a view for explaining how the substrate G is received from the transfer arm 40 by the lifter pins 8a and 8b.
The substrate G transported by the transport arm 40 may be attracted to the transport arm 40 in some cases. In this case, if the lifter pins 8a and 8b are lifted at a stroke to receive the substrate G from the transfer arm 40, the substrate G is vibrated greatly due to an impact when the substrate G is peeled off from the transfer arm 40 and is displaced. May cause damage or damage. Therefore, when the substrate G is received from the transfer arm 40 by the lifter pins 8a and 8b, first, as shown in FIG. 5A, the lifter pin 8a is disposed higher than the lifter pin 8b by a predetermined amount. The lifter pins 8a and 8b are lifted, and as shown in FIG. 5 (b), the substrate G is in contact with the lifter pin 8a while maintaining contact with the transfer arm 40 and bent downward in a convex shape. Preferably, when the substrate G is in a state immediately before leaving the transfer arm 40, the lift of the lifter pins 8a and 8b is temporarily stopped. Accordingly, even when the substrate G is adsorbed to the transfer arm 40, the substrate G is gradually peeled off from the transfer arm 40, so that the vibration of the substrate G can be suppressed. Then, as shown in FIG. 5C, the lift of the lifter pins 8 a and 8 b is resumed, and the substrate G is separated from the transfer arm 40. As a result, the substrate G can be safely transferred from the transfer arm 40 to the lifter pins 8a and 8b.

なお、図5(c)に示すように、リフターピン8a、8bの上昇を再開させ、基板Gを搬送アーム40から離間させた際に、例えば、中央部が搬送アーム40に吸着していたことにより基板Gに振動が生じた場合には、図5(d)に示すように、リフターピン8a、8bを下降させる。そして、図5(e)に示すように、基板Gが下に凸状に撓んだまま搬送アーム40に再び接触した状態、より好ましくは基板Gが搬送アーム40に接触した直後の状態のときに、リフターピン8a、8bの下降を停止させる。この状態では、基板Gと搬送アーム40との接触部分が小さく、基板Gが搬送アーム40に再び吸着してしまうおそれはないため、基板Gの振動をより確実に抑えることができる。その後、図5(f)に示すように、リフターピン8a、8bを再び上昇させ、基板Gを搬送アーム40から離間させることにより、基板Gを搬送アーム40上からリフターピン8a、8b上により安全に移し替えることが可能となる。   As shown in FIG. 5C, when the lift of the lifter pins 8a and 8b is resumed and the substrate G is separated from the transfer arm 40, for example, the central portion is attracted to the transfer arm 40. When the substrate G vibrates, the lifter pins 8a and 8b are lowered as shown in FIG. Then, as shown in FIG. 5E, when the substrate G is in a state where it is in contact with the transfer arm 40 again while being bent downward, more preferably, immediately after the substrate G is in contact with the transfer arm 40. Then, the lowering of the lifter pins 8a and 8b is stopped. In this state, the contact portion between the substrate G and the transfer arm 40 is small, and there is no possibility that the substrate G will be attracted to the transfer arm 40 again, so that the vibration of the substrate G can be more reliably suppressed. Thereafter, as shown in FIG. 5 (f), the lifter pins 8a and 8b are lifted again, and the substrate G is separated from the transfer arm 40, so that the substrate G is safer on the lifter pins 8a and 8b from the transfer arm 40. It becomes possible to transfer to.

図6はリフターピン8a、8bによるサセプタ4からの基板Gの受け取り態様を説明するための図である。
エッチング処理後の基板Gは、静電吸着機構による吸着を解除しても、下部電極として機能するサセプタ4に吸着している場合があるため、リフターピン8a、8bによるサセプタ4からの基板Gの受け取りも、搬送アーム40からの受け取りと同様に行うことが好ましい。まず、図6(a)に示すように、リフターピン8aがリフターピン8bよりも所定量高く配置されるように、リフターピン8a、8bを上昇させ(リフターピン8aのみを上昇させてもよい)、図6(b)に示すように、基板Gが搬送アーム40との接触を保ったままリフターピン8aに当接して下に凸状に撓んだ状態、より好ましくは基板Gがサセプタ4から離れる直前の状態のときに、リフターピン8a、8bの上昇を一旦停止させる。そして、図6(c)に示すように、リフターピン8a、8bの上昇を再開させ、基板Gを搬送アーム40から離間させる。これにより、基板Gの振動を抑えて、基板Gをサセプタ4上からリフターピン8a、8b上に安全に移し替えることが可能となる。
FIG. 6 is a view for explaining how the substrate G is received from the susceptor 4 by the lifter pins 8a and 8b.
Since the substrate G after the etching process may be adsorbed to the susceptor 4 that functions as the lower electrode even if the adsorption by the electrostatic adsorption mechanism is released, the substrate G from the susceptor 4 by the lifter pins 8a and 8b The reception is preferably performed in the same manner as the reception from the transfer arm 40. First, as shown in FIG. 6 (a), the lifter pins 8a and 8b are raised so that the lifter pin 8a is disposed higher than the lifter pin 8b by a predetermined amount (only the lifter pin 8a may be raised). 6B, the substrate G is in contact with the lifter pin 8a while maintaining contact with the transfer arm 40, and is bent downward in a convex shape. More preferably, the substrate G is removed from the susceptor 4. In the state immediately before leaving, the lift of the lifter pins 8a and 8b is temporarily stopped. Then, as shown in FIG. 6C, the lift of the lifter pins 8 a and 8 b is resumed, and the substrate G is separated from the transfer arm 40. Accordingly, it is possible to safely transfer the substrate G from the susceptor 4 to the lifter pins 8a and 8b while suppressing the vibration of the substrate G.

また、図6(c)に示すように、リフターピン8a、8bの上昇を再開させ、基板Gをサセプタ4から離間させた際に、例えば、中央部がサセプタ4に吸着していたことにより基板Gに振動が生じた場合には、図6(d)に示すように、リフターピン8a、8bを下降させ、図6(e)に示すように、基板Gが下に凸状に撓んだままサセプタ4に再び接触した状態、より好ましくは基板Gがサセプタ4に接触した直後の状態のときに、リフターピン8a、8bの下降を停止させる。その後、図6(f)に示すように、リフターピン8a、8bを再び上昇させ、基板Gを搬送アーム40から離間させる。これにより、基板Gの振動をより確実に抑えて、基板Gをサセプタ4上からリフターピン8a、8b上により安全に移し替えることが可能となる。   6C, when the lift of the lifter pins 8a and 8b is resumed and the substrate G is separated from the susceptor 4, for example, the central portion is adsorbed to the susceptor 4, so that the substrate When vibration occurs in G, the lifter pins 8a and 8b are lowered as shown in FIG. 6D, and the substrate G is bent downwardly as shown in FIG. 6E. The lowering of the lifter pins 8a, 8b is stopped when the substrate G is in contact with the susceptor 4 again, more preferably in the state immediately after the substrate G is in contact with the susceptor 4. Thereafter, as shown in FIG. 6F, the lifter pins 8 a and 8 b are raised again, and the substrate G is separated from the transfer arm 40. Thereby, the vibration of the substrate G can be more reliably suppressed, and the substrate G can be safely transferred from the susceptor 4 to the lifter pins 8a and 8b.

次に、リフターピン8aとリフターピン8bとの突出高さの差を調整しつつ、基板Gを支持した際の各リフターピン8a、8bに作用する基板Gの荷重を測定した。基板Gのサイズ(縦×横)は、1800mm×1500mmとし、各リフターピン8a、8bに作用する基板Gの荷重の測定は、図7に示すように、各リフターピン8a、8bの先端部に設けた荷重検出部としての荷重センサ50によって行った。結果を図8に示す。なお、図8では、縦軸を(各荷重センサ50による測定値)とし、横軸を(リフターピン8bの高さ−リフターピン8aの高さ)とした。   Next, the load of the board | substrate G which acts on each lifter pin 8a, 8b at the time of supporting the board | substrate G was measured, adjusting the difference in the protrusion height of the lifter pin 8a and the lifter pin 8b. The size (length × width) of the substrate G is 1800 mm × 1500 mm, and the load on the substrate G acting on the lifter pins 8a, 8b is measured at the tip of each lifter pin 8a, 8b as shown in FIG. This was performed by a load sensor 50 as a provided load detection unit. The results are shown in FIG. In FIG. 8, the vertical axis is (measured value by each load sensor 50), and the horizontal axis is (height of lifter pin 8b−height of lifter pin 8a).

図8に示すように、リフターピン8aをリフターピン8bよりも若干高く配置した場合には、各荷重センサ50による測定値に大きなばらつきが生じているが、リフターピン8aとリフターピン8bとの高さの差が大きくなるのに伴って、各荷重センサ50による測定値のばらつきが小さくなり、リフターピン8aをリフターピン8bよりも所定量、ここでは20mm程度高く配置した場合には、リフターピン8aをリフターピン8bと等しい高さに配置した場合、あるいはリフターピン8aをリフターピン8bよりも低い高さに配置した場合よりも、各荷重センサ50による測定値のばらつきが小さくなっている。すなわち、本実施形態のようにリフターピン8aをリフターピン8bよりも所定量高く配置することにより、基板Gの荷重を各リフターピン8a、8bにバランスよく分散できることが確認された。したがって、本実施形態によれば、基板Gの変形を抑止することができるとともに、基板Gを安定して支持することができると考えられる。   As shown in FIG. 8, when the lifter pins 8a are arranged slightly higher than the lifter pins 8b, the measurement values of the load sensors 50 vary greatly, but the heights of the lifter pins 8a and the lifter pins 8b are high. As the difference in height increases, the variation in the measured values by the load sensors 50 decreases, and when the lifter pin 8a is disposed higher than the lifter pin 8b by a predetermined amount, here about 20 mm, the lifter pin 8a. The variation in the measured values by the load sensors 50 is smaller than when the lifter pin 8b is disposed at a height equal to that of the lifter pin 8b or when the lifter pin 8a is disposed at a height lower than the lifter pin 8b. That is, it was confirmed that the load of the substrate G can be distributed to each of the lifter pins 8a and 8b in a balanced manner by disposing the lifter pins 8a higher than the lifter pins 8b by a predetermined amount as in this embodiment. Therefore, according to the present embodiment, it is considered that the deformation of the substrate G can be suppressed and the substrate G can be stably supported.

以上、本発明の好適な実施の形態を説明したが、本発明は、上記実施の形態に限定されるものではなく、種々の変更が可能である。上記実施形態では、基板の中央部を支持するリフターピンを複数本、例えば2本設けたが、このリフターピンは1本であってもよい。また、上記実施形態では、基板の周縁部を支持するリフターピンが基板の中央部を支持するリフターピンよりも所定量高く配置されるように独立した駆動部を用いたが、これに限らず、各リフターピンの長さをあらかじめ変えておき、各リフターピンを同一の駆動部によって駆動させることも可能であり、各リフターピンの長さをあらかじめ変えておき、かつ独立した駆動部を用いることも可能である。さらに、上記実施形態では、下部電極に高周波電力を印加するRIEタイプの容量結合型平行平板プラズマエッチング装置に適用した例について説明したが、これに限らず、アッシング、CVD成膜等の他のプラズマ処理装置に適用可能であり、基板を載置台に載置して処理する、プラズマ処理装置以外の基板処理装置全般にも適用可能である。さらに、上記実施形態ではFPD用のガラス基板に適用した例について説明したが、FPD用のガラス基板以外の可撓性を有する基板全般に適用可能である。   The preferred embodiment of the present invention has been described above, but the present invention is not limited to the above embodiment, and various modifications can be made. In the above embodiment, a plurality of, for example, two lifter pins for supporting the central portion of the substrate are provided, but one lifter pin may be provided. In the above embodiment, the independent drive unit is used so that the lifter pin that supports the peripheral portion of the substrate is disposed higher than the lifter pin that supports the central portion of the substrate by a predetermined amount. It is possible to change the length of each lifter pin in advance and drive each lifter pin by the same drive unit, or to change the length of each lifter pin in advance and use an independent drive unit Is possible. Furthermore, in the above-described embodiment, an example in which the present invention is applied to an RIE type capacitively coupled parallel plate plasma etching apparatus that applies high-frequency power to the lower electrode has been described. However, the present invention is not limited thereto, and other plasmas such as ashing and CVD film formation are used. The present invention can be applied to a processing apparatus, and can also be applied to any substrate processing apparatus other than a plasma processing apparatus that mounts a substrate on a mounting table for processing. Furthermore, although the said embodiment demonstrated the example applied to the glass substrate for FPD, it is applicable to the board | substrate with flexibility other than the glass substrate for FPD.

本発明に係る基板載置機構を備えた基板処理装置の一実施形態であるプラズマエッチング装置の側面方向の概略断面図である。It is a schematic sectional drawing of the side surface direction of the plasma etching apparatus which is one Embodiment of the substrate processing apparatus provided with the substrate mounting mechanism based on this invention. プラズマエッチング装置の平面方向の概略断面図である。It is a schematic sectional drawing of the plane direction of a plasma etching apparatus. 基板載置機構の概略図である。It is the schematic of a substrate mounting mechanism. 基板載置機構の構成要素であるリフターピンによる基板の支持態様を説明するための図である。It is a figure for demonstrating the support aspect of the board | substrate by the lifter pin which is a component of a board | substrate mounting mechanism. リフターピンによる搬送アームからの基板の受け取り態様を説明するための図である。It is a figure for demonstrating the reception aspect of the board | substrate from the conveyance arm by a lifter pin. リフターピンによるサセプタからの基板の受け取り態様を説明するための図である。It is a figure for demonstrating the reception aspect of the board | substrate from a susceptor by a lifter pin. リフターピンに作用する基板の荷重の測定方法を説明するための図である。It is a figure for demonstrating the measuring method of the load of the board | substrate which acts on a lifter pin. 図7に示した測定方法による測定結果を示す図である。It is a figure which shows the measurement result by the measuring method shown in FIG. 従来の基板載置機構の概略図である。It is the schematic of the conventional board | substrate mounting mechanism.

符号の説明Explanation of symbols

1:プラズマエッチング装置(基板処理装置:プラズマ処理装置)
2:チャンバー(処理容器)
4:サセプタ(載置台)
8a:リフターピン(第1の昇降ピン)
8b:リフターピン(第2の昇降ピン)
9a、9b:駆動部(駆動機構)
15:処理ガス供給管
18:処理ガス供給源
19:排気管
20:排気装置
25:高周波電源
31:コントローラ
32:ユーザーインターフェイス
33:記憶部
40:搬送アーム(搬送部材)
50:荷重センサ(荷重検出部)
G:ガラス基板(被処理基板)
1: Plasma etching equipment (substrate processing equipment: plasma processing equipment)
2: Chamber (processing container)
4: Susceptor (mounting table)
8a: Lifter pin (first lifting pin)
8b: Lifter pin (second lifting pin)
9a, 9b: Drive unit (drive mechanism)
15: Process gas supply pipe 18: Process gas supply source 19: Exhaust pipe 20: Exhaust device 25: High frequency power supply 31: Controller 32: User interface 33: Storage unit 40: Transfer arm (transfer member)
50: Load sensor (load detection unit)
G: Glass substrate (substrate to be processed)

Claims (14)

可撓性を有する被処理基板を載置する載置台と、
前記載置台の載置面に対して突没自在に設けられ、被処理基板を支持して前記載置台の上方の基板の受け渡しを行う受け渡し位置と前記載置台上の載置位置との間で昇降させる複数の昇降ピンと、
前記昇降ピンを駆動させる駆動機構と
を具備する基板載置機構であって、
前記複数の昇降ピンは、被処理基板の周縁部を支持する第1の昇降ピンと、被処理基板の中央部を支持する第2の昇降ピンとを有し、
前記駆動機構は、被処理基板を昇降させる際に、前記第1の昇降ピンを前記第2の昇降ピンよりも高く突出させて、被処理基板が下に凸状に撓んだ状態で安定的に支持されるようにし、
前記第1および第2の昇降ピンには、それぞれ、被処理基板の荷重を検出する荷重検出部が設けられ、前記各荷重検出部の検出結果に基づき、前記第1の昇降ピンと前記第2の昇降ピンとの突出高さの差が調整されることを特徴とする基板載置機構。
A mounting table for mounting a substrate to be processed having flexibility;
Between the mounting position on the mounting table and the mounting position that is provided so as to be able to project and retract with respect to the mounting surface of the mounting table and supports the substrate to be processed and transfers the substrate above the mounting table. A plurality of lifting pins to be raised and lowered;
A substrate mounting mechanism comprising a driving mechanism for driving the elevating pins,
The plurality of lifting pins include a first lifting pin that supports a peripheral portion of the substrate to be processed, and a second lifting pin that supports a center portion of the substrate to be processed.
When the substrate to be processed is moved up and down, the drive mechanism protrudes the first lift pin higher than the second lift pin and is stable in a state where the substrate to be processed is bent downward. so as to be supported by,
Each of the first and second lifting pins is provided with a load detection unit that detects the load of the substrate to be processed. Based on the detection result of each load detection unit, the first lifting pin and the second lifting pin are provided. A substrate mounting mechanism characterized in that a difference in protruding height from an elevation pin is adjusted .
前記駆動機構は、前記第1の昇降ピンと前記第2の昇降ピンとを独立して駆動させることが可能であることを特徴とする請求項1に記載の基板載置機構。   2. The substrate mounting mechanism according to claim 1, wherein the driving mechanism is capable of independently driving the first lifting pins and the second lifting pins. 前記駆動機構による前記第1および第2の昇降ピンの駆動を制御する制御部を具備し、
前記制御部は、前記載置位置の被処理基板を前記受け渡し位置に向けて上昇させている途中で、被処理基板が前記載置台との接触を保ったまま下に凸状に撓んだ状態のときに前記第1および第2の昇降ピンの突出方向への駆動を一旦停止させることを特徴とする請求項1または請求項2に記載の基板載置機構。
A controller that controls driving of the first and second lifting pins by the driving mechanism ;
The control unit is in a state in which the substrate to be processed is bent downward in a convex shape while keeping the contact with the mounting table while raising the substrate to be processed at the mounting position toward the delivery position. 3. The substrate mounting mechanism according to claim 1, wherein driving of the first and second elevating pins in the protruding direction is temporarily stopped at the time.
前記駆動機構による前記第1および第2の昇降ピンの駆動を制御する制御部を具備し、
前記制御部は、前記載置位置の被処理基板を前記受け渡し位置に向けて上昇させている途中で、被処理基板が前記載置台との接触を保ったまま下に凸状に撓んだ状態のときに前記第1および第2の昇降ピンの突出方向への駆動を一旦停止させ、この駆動を再開させて被処理基板を前記載置台から離間させた後、前記第1および第2の昇降ピンを没入方向に駆動させ、被処理基板が下に凸状に撓んだまま前記載置台に接触した状態のときにこの駆動を停止させ、その後、前記第1および第2の昇降ピンを再び突出方向に駆動させることを特徴とする請求項1または請求項2に記載の基板載置機構。
A controller that controls driving of the first and second lifting pins by the driving mechanism ;
The control unit is in a state in which the substrate to be processed is bent downward in a convex shape while keeping the contact with the mounting table while raising the substrate to be processed at the mounting position toward the delivery position. At this time, the driving of the first and second lifting pins in the protruding direction is temporarily stopped, the driving is resumed to separate the substrate to be processed from the mounting table, and then the first and second lifting and lowering pins are performed. The pin is driven in the immersion direction, and this drive is stopped when the substrate to be processed is in a state of being bent downward and in contact with the mounting table, and then the first and second lifting pins are moved again. The substrate mounting mechanism according to claim 1, wherein the substrate mounting mechanism is driven in a protruding direction.
前記第1および第2の昇降ピンは、搬送部材によって下方から支持されて前記受け渡し位置に搬送された被処理基板を受け取るように構成されており、
前記制御部は、前記第1および第2の昇降ピンが前記受け渡し位置に向けて突出方向に駆動している途中で、被処理基板が前記搬送部材との接触を保ったまま下に凸状に撓んだ状態のときに前記第1および第2の昇降ピンの突出方向への駆動を一旦停止させることを特徴とする請求項3または請求項4に記載の基板載置機構。
The first and second lifting pins are configured to receive a substrate to be processed which is supported from below by a transport member and transported to the delivery position.
While the first and second elevating pins are driven in the projecting direction toward the delivery position, the control unit projects downward while the substrate to be processed remains in contact with the transport member. 5. The substrate mounting mechanism according to claim 3, wherein driving of the first and second elevating pins in a protruding direction is temporarily stopped in a bent state. 6.
前記第1および第2の昇降ピンは、搬送部材によって下方から支持されて前記受け渡し位置に搬送された被処理基板を受け取るように構成されており、
前記制御部は、前記第1および第2の昇降ピンが前記受け渡し位置に向けて突出方向に駆動している途中で、被処理基板が前記搬送部材との接触を保ったまま下に凸状に撓んだ状態のときに前記第1および第2の昇降ピンの突出方向への駆動を一旦停止させ、この駆動を再開させて被処理基板を前記搬送部材から離間させた後、前記第1および第2の昇降ピンを没入方向に駆動させ、被処理基板が下に凸状に撓んだまま前記搬送部材に接触した状態のときにこの駆動を停止させ、その後、前記第1および第2の昇降ピンを再び突出方向に駆動させることを特徴とする請求項3または請求項4に記載の基板載置機構。
The first and second lifting pins are configured to receive a substrate to be processed which is supported from below by a transport member and transported to the delivery position.
While the first and second elevating pins are driven in the projecting direction toward the delivery position, the control unit projects downward while the substrate to be processed remains in contact with the transport member. After the first and second elevating pins are driven in the projecting direction in a bent state, the driving in the projecting direction is temporarily stopped and the driving is resumed to separate the substrate to be processed from the transport member. The second raising / lowering pin is driven in the immersion direction, and this drive is stopped when the substrate to be processed is in contact with the transport member while being bent downwardly, and then the first and second pins are driven. 5. The substrate mounting mechanism according to claim 3, wherein the elevating pins are again driven in the protruding direction.
被処理基板を収容する処理容器と、
前記処理容器内に設けられた、被処理基板を載置する載置台を有する基板載置機構と、
前記載置台に載置された被処理基板に対して所定の処理を施す処理機構と、
を具備し、
前記基板載置機構は、請求項1から請求項6のいずれかの構成を有することを特徴とする基板処理装置。
A processing container for storing a substrate to be processed;
A substrate mounting mechanism provided in the processing container and having a mounting table for mounting a substrate to be processed;
A processing mechanism for performing a predetermined process on the target substrate placed on the mounting table;
Comprising
7. The substrate processing apparatus, wherein the substrate mounting mechanism has a configuration according to any one of claims 1 to 6.
前記処理機構は、前記処理容器内に処理ガスを供給するガス供給機構と、前記処理容器内を排気する排気機構と、前記処理容器内に前記処理ガスのプラズマを生成するプラズマ生成機構とを有し、被処理基板に対してプラズマ処理を施すことを特徴とする請求項7に記載の基板処理装置。   The processing mechanism includes a gas supply mechanism that supplies a processing gas into the processing container, an exhaust mechanism that exhausts the processing container, and a plasma generation mechanism that generates plasma of the processing gas in the processing container. The substrate processing apparatus according to claim 7, wherein plasma processing is performed on the substrate to be processed. 可撓性を有する被処理基板を載置する載置台の載置面に対して突没する複数の昇降ピンにより被処理基板を支持して前記載置台の上方の基板の受け渡しを行う受け渡し位置と前記載置台上の載置位置との間で昇降させる基板受け渡し方法であって、
前記複数の昇降ピンを、被処理基板の周縁部を支持する第1の昇降ピンと、被処理基板の中央部を支持する第2の昇降ピンとから構成し、
被処理基板を昇降させる際に、前記第1の昇降ピンを前記第2の昇降ピンよりも高く突出させて、被処理基板が下に凸状に撓んだ状態で安定的に支持されるようにし、
前記第1および第2の昇降ピンにそれぞれ、被処理基板の荷重を検出する荷重検出部を設け、前記各荷重検出部の検出結果に基づき、前記第1の昇降ピンと前記第2の昇降ピンとの突出高さの差を調整することを特徴とする基板受け渡し方法。
A transfer position for supporting the substrate to be processed by a plurality of lifting pins projecting and retracting with respect to the mounting surface of the mounting table on which the flexible substrate to be processed is mounted, and transferring the substrate above the mounting table; A substrate delivery method for moving up and down between the mounting position on the mounting table,
The plurality of elevating pins are composed of a first elevating pin that supports the peripheral portion of the substrate to be processed and a second elevating pin that supports the center portion of the substrate to be processed,
When raising and lowering the substrate to be processed, the first raising and lowering pins protrude higher than the second raising and lowering pins so that the substrate to be treated is stably supported in a state of being bent downward. to,
Each of the first and second lifting pins is provided with a load detection unit that detects the load of the substrate to be processed, and based on the detection result of each load detection unit, the first lifting pin and the second lifting pin A substrate delivery method comprising adjusting a difference in protrusion height .
前記載置位置の被処理基板を前記受け渡し位置に向けて上昇させている途中で、被処理基板が前記載置台との接触を保ったまま下に凸状に撓んだ状態のときに前記第1および第2の昇降ピンの突出方向への駆動を一旦停止させることを特徴とする請求項9に記載の基板受け渡し方法。 While the substrate to be processed at the mounting position is being raised toward the delivery position, the substrate is bent in a convex shape while maintaining contact with the mounting table. The substrate delivery method according to claim 9, wherein driving of the first and second lifting pins in the protruding direction is temporarily stopped. 前記載置位置の被処理基板を前記受け渡し位置に向けて上昇させている途中で、被処理基板が前記載置台との接触を保ったまま下に凸状に撓んだ状態のときに前記第1および第2の昇降ピンの突出方向への駆動を一旦停止させ、この駆動を再開させて被処理基板を前記載置台から離間させた後、前記第1および第2の昇降ピンを没入方向に駆動させ、被処理基板が下に凸状に撓んだまま前記載置台に接触した状態のときにこの駆動を停止させ、その後、前記第1および第2の昇降ピンを再び突出方向に駆動させることを特徴とする請求項9に記載の基板受け渡し方法。 While the substrate to be processed at the mounting position is being raised toward the delivery position, the substrate is bent in a convex shape while maintaining contact with the mounting table. The drive in the protruding direction of the first and second lifting pins is temporarily stopped, the driving is resumed to separate the substrate to be processed from the mounting table, and then the first and second lifting pins are moved in the immersion direction. The driving is stopped when the substrate to be processed is in a state of being bent downward and in contact with the mounting table, and then the first and second lifting pins are driven again in the protruding direction. The substrate delivery method according to claim 9 . 前記第1および第2の昇降ピンを、搬送部材によって下方から支持されて前記受け渡し位置に搬送された被処理基板を受け取るように構成し、
前記第1および第2の昇降ピンが前記受け渡し位置に向けて突出方向に駆動している途中で、被処理基板が前記搬送部材との接触を保ったまま下に凸状に撓んだ状態のときに前記第1および第2の昇降ピンの突出方向への駆動を一旦停止させることを特徴とする請求項9から請求項11のいずれか1項に記載の基板受け渡し方法。
The first and second lifting pins are configured to receive a substrate to be processed which is supported from below by a transport member and transported to the delivery position,
While the first and second elevating pins are driven in the protruding direction toward the delivery position, the substrate to be processed is bent in a convex shape while maintaining contact with the transport member. substrate transfer method according to claim 9 in any one of claims 11, wherein the once stopping the driving of the to the first and second projecting direction of the lifting pin when.
前記第1および第2の昇降ピンを、搬送部材によって下方から支持されて前記受け渡し位置に搬送された被処理基板を受け取るように構成し、
前記第1および第2の昇降ピンが前記受け渡し位置に向けて突出方向に駆動している途中で、被処理基板が前記搬送部材との接触を保ったまま下に凸状に撓んだ状態のときに前記第1および第2の昇降ピンの突出方向への駆動を一旦停止させ、この駆動を再開させて被処理基板を前記搬送部材から離間させた後、前記第1および第2の昇降ピンを没入方向に駆動させ、被処理基板が下に凸状に撓んだまま前記搬送部材に接触した状態のときにこの駆動を停止させ、その後、前記第1および第2の昇降ピンを再び突出方向に駆動させることを特徴とする請求項9から請求項11のいずれか1項に記載の基板受け渡し方法。
The first and second lifting pins are configured to receive a substrate to be processed which is supported from below by a transport member and transported to the delivery position,
While the first and second elevating pins are driven in the protruding direction toward the delivery position, the substrate to be processed is bent in a convex shape while maintaining contact with the transport member. Sometimes, the drive of the first and second lifting pins in the protruding direction is temporarily stopped, the driving is restarted to separate the substrate to be processed from the transport member, and then the first and second lifting pins Is driven in the immersion direction, and this drive is stopped when the substrate to be processed is in a state of being bent downward and in contact with the transport member, and then the first and second lifting pins protrude again. substrate transfer method according to claims 9 to any one of claims 11, wherein the driving direction.
コンピュータ上で動作する制御プログラムが記憶されたコンピュータ読取可能な記憶媒体であって、
前記制御プログラムは、実行時に請求項9から請求項13のいずれか1項に記載の基板受け渡し方法が行われるように、コンピュータに処理装置を制御させることを特徴とするコンピュータ読取可能な記憶媒体。
A computer-readable storage medium storing a control program that runs on a computer,
The control program, as the substrate transfer method according to any one of claims 13 to runtime claims 9 is performed, computer-readable storage medium, characterized in that to control the processing unit to the computer.
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Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5142818B2 (en) * 2008-05-20 2013-02-13 株式会社日立ハイテクノロジーズ Proximity exposure apparatus, method for adjusting chuck height of proximity exposure apparatus, and method for manufacturing display panel substrate
KR101612502B1 (en) * 2008-12-18 2016-04-14 주성엔지니어링(주) Method and apparatus for manufacturing semiconductor device
KR101689550B1 (en) * 2009-01-11 2016-12-26 어플라이드 머티어리얼스, 인코포레이티드 Electrostatic end effector apparatus, systems and methods for transporting substrates
US8840754B2 (en) * 2010-09-17 2014-09-23 Lam Research Corporation Polar regions for electrostatic de-chucking with lift pins
JP5907681B2 (en) * 2011-08-02 2016-04-26 東京エレクトロン株式会社 Board delivery method
TWM431163U (en) * 2012-01-31 2012-06-11 Shengjia Prec Co Ltd Glass substrate transportation device
JP5854921B2 (en) * 2012-05-10 2016-02-09 三菱電機株式会社 Solar cell manufacturing apparatus and solar cell manufacturing method
KR102324405B1 (en) * 2013-12-31 2021-11-11 세메스 주식회사 Apparatus and Method for treating substrate
JP6369054B2 (en) * 2014-03-03 2018-08-08 東京エレクトロン株式会社 Substrate placing apparatus and substrate processing apparatus
CN104991427B (en) * 2015-08-12 2017-12-08 京东方科技集团股份有限公司 A kind of exposure device and exposure method
CN106486411B (en) * 2015-09-01 2019-06-11 东京毅力科创株式会社 Substrate board treatment, the position detection of lifter pin, adjusting and method for detecting abnormality
JP6577385B2 (en) * 2016-02-12 2019-09-18 株式会社荏原製作所 Substrate holding module, substrate processing apparatus, and substrate processing method
JP7030416B2 (en) * 2017-03-16 2022-03-07 キヤノン株式会社 Substrate holding device, lithography device, manufacturing method of goods
JP6461235B2 (en) * 2017-05-22 2019-01-30 キヤノントッキ株式会社 Substrate mounting apparatus, film forming apparatus, substrate mounting method, film forming method, and electronic device manufacturing method
JP6869111B2 (en) * 2017-06-06 2021-05-12 東京エレクトロン株式会社 Board delivery method and board processing equipment
WO2019003403A1 (en) * 2017-06-30 2019-01-03 東芝三菱電機産業システム株式会社 Substrate positioning device and substrate positioning method
US10522385B2 (en) 2017-09-26 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer table with dynamic support pins
CN107870461A (en) * 2017-12-18 2018-04-03 武汉华星光电技术有限公司 Substrate processing platform and its support meanss
CN108257908A (en) * 2017-12-29 2018-07-06 深圳市华星光电半导体显示技术有限公司 Elevating method, lifting gear and computer readable storage medium
KR102451031B1 (en) * 2018-07-30 2022-10-06 아루박 테크노 가부시키가이샤 Substrate lift apparatus and substrate transfer method
CN112585730B (en) * 2018-09-05 2024-04-19 东京毅力科创株式会社 Substrate processing method and substrate processing apparatus
CN109309041B (en) * 2018-09-14 2020-12-11 惠科股份有限公司 Substrate processing apparatus and method for adjusting substrate processing apparatus
CN109343248A (en) * 2018-12-06 2019-02-15 深圳市华星光电半导体显示技术有限公司 Vacuum forming apparatus and its method for being detached from display panel
JP7198694B2 (en) 2019-03-18 2023-01-04 東京エレクトロン株式会社 SUBSTRATE LIFT MECHANISM, SUBSTRATE SUPPORTER, AND SUBSTRATE PROCESSING APPARATUS
CN112701027A (en) * 2019-10-22 2021-04-23 夏泰鑫半导体(青岛)有限公司 Plasma processing apparatus and method for replacing edge ring
JP7438018B2 (en) * 2020-05-11 2024-02-26 東京エレクトロン株式会社 Substrate mounting method and substrate mounting mechanism
KR102582696B1 (en) * 2020-06-15 2023-09-26 세메스 주식회사 Apparatus for treating substrate, method for measuring height difference of lift pins and computer readable recording medium recoring program
JP2023117038A (en) 2022-02-10 2023-08-23 東京エレクトロン株式会社 Substrate support method and substrate processing equipment

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02122741U (en) * 1989-03-16 1990-10-09
JP3940823B2 (en) * 1994-12-26 2007-07-04 株式会社ニコン Stage device and control method thereof
JP3498877B2 (en) * 1995-12-05 2004-02-23 株式会社東芝 Semiconductor manufacturing apparatus and semiconductor device manufacturing method
JP2000277587A (en) * 1999-03-29 2000-10-06 Kokusai Electric Co Ltd Substrate carrying system
EP1174910A3 (en) * 2000-07-20 2010-01-06 Applied Materials, Inc. Method and apparatus for dechucking a substrate
JP2002246450A (en) * 2001-02-20 2002-08-30 Nikon Corp Substrate-holding device and substrate-transfer method
TWI226303B (en) * 2002-04-18 2005-01-11 Olympus Corp Substrate carrying device
JP2004228488A (en) * 2003-01-27 2004-08-12 Matsushita Electric Ind Co Ltd Substrate conveyance method
KR101003699B1 (en) * 2003-08-11 2010-12-23 주성엔지니어링(주) Depositing Apparatus for Liquid Crystal Display Device including shadow frame and Method for Operating the same
JP4080401B2 (en) * 2003-09-05 2008-04-23 大日本スクリーン製造株式会社 Substrate processing apparatus and substrate processing method
JP2005129837A (en) * 2003-10-27 2005-05-19 Seiko Epson Corp Equipment and method for substrate treatment
US20060005770A1 (en) * 2004-07-09 2006-01-12 Robin Tiner Independently moving substrate supports
TWI354824B (en) * 2005-05-09 2011-12-21 Advanced Display Proc Eng Co Lift pin module of flat panel display manufacturin

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