200818385 九、發明說明 【發明所屬之技術領域】 本發明是關於藉由對載置台之載置面 支撐平面顯示器（FPD )用玻璃基板等之 ' 處理基板，而在執行交接載置台之上方之 w ，和被載置於載置台之載置位置之間予以 機構及基板交接方法。 【先前技術】 在FPD之製程中，對屬於被處理基 璃基板，施予乾鈾刻或濺鍍、CVD (化學 各種處理。如此之處理通常是在於被設置 台載置玻璃基板之狀態下執行，基板對載 載一般是藉由設置成可對載置台之載置面 銷而執行。於負載基板時，使升降銷上昇 φ 面突出，將藉由搬運手臂等之搬運構件所 至升降銷之後，使升降銷下降而縮入載置 者，於卸載基板時，使升降銷上昇而自載 出，使基板自載置台離開之後，將升降銷 搬運構件。 升降銷雖然考慮對處理品質之影響以 之邊緣部位置爲佳，但是近來已FPD之大 現一邊超過2m之巨大玻璃基板，僅以邊 銷要支撐如此巨大之玻璃基板則有困難。 伸縮之升降銷， 具有可撓性的被 基板的交接位置 升降之基板載置 〔之FPD用之玻 氣相沉積）等之 在腔室內之載置 置台之負載及卸 伸縮之多數升降 自載置台之載置 搬運之基板轉移 台之載置面。再 置台之載置面突 上之基板轉移至 設置在玻璃基板 型化爲指向，出 緣部位置之升降 -4- 200818385 因此，於玻璃基板爲大型時，在中央部位置也設置升 降銷，使可以確實支撐玻璃基板（例如參照專利文獻1 ) ，但是如上述般，當考慮對處理品質之影響時，則不得不 將設置在玻璃基板之中央部位置之升降銷限制成少數。其 ' 結果，如第9圖（a )所示般，當藉由邊緣部位置及中央 ' 部位置之升降銷B、C支撐玻璃基板A時，玻璃基板A則 變形彎曲成升降銷B、C間部份凹陷，中央部隆起，如第 φ 9圖（b)所示般，於玻璃基板A被載置於載置台D時， 則有變形之玻璃基板A之中央部自載置台D浮起之虞。 載置台具有調整處理時之玻璃基板溫度之調溫功能之情形 爲多，例如電漿蝕刻裝置中，載置台因發揮冷卻電漿蝕刻 飩之玻璃基板之作用，故當玻璃基板之一部份自載置台浮 起時，玻璃基板之溫度在面內不均勻成爲處理不均勻，例 如蝕刻部均勻之發生主因。 〔專利文獻1〕日本特開2002-24 6450號公報 【發明內容】 〔發明所欲解決之課題〕 本發明是鑒於如此之事情而所創作出者，其目的爲提 供一種即使被處理基板爲大型，亦可以藉由升降銷確實支 撐被處理基板並且有效果抑制被處理基板之變形的基板處 理裝置，以及基板交接方法、具備有如此基板載置機構之 基板處理裝置，以及記憶有用以實行如此基板交接方法之 控制程式的電腦可讀取之記憶媒體。 -5- 200818385 〔用以解決課題之手段〕 爲了解決上述課題，本發明之第1觀點是提供一種基 板載置機構，具備有載置台，用以載置具有可撓性之被處 ' 理基板；多數升降銷，被設置成對上述載置台之載置面伸 ' 縮自如，支撐被處理基板而在執行交接上述載置台之上方 之基板的交接位置和上述載置台上之載置位置之間予以升 B 降；和驅動機構，用以驅動上述升降銷，其特徵爲：上述 多數升降銷具有支撐被處理基板之邊緣部之第1升降銷， 和支撐被處理基板之中央部的第2升降銷，上述驅動機構 是於升降被處理基板時，使上述第1升降銷比上述第2升 降銷突出更高，在被處理基板下方彎曲成凸狀之狀態下安 定地被支撐。 本發明之第1觀點中，上述驅動機構能夠獨立使上述 第1升降銷和上述第2升降銷驅動爲佳。 • 再者，以上之本發明之第1觀點中，是以具備用以控 制由於上述驅動部所產生之上述第1及第2升降銷之驅動 的控制部，上述控制部是在使上述載置位置之被處理基板 朝向上述交接位置上升之途中，於被處理基板保持與上述 載置台接觸而下方彎曲成凸狀之狀態時，暫時使朝向上述 第1及第2升降銷之突出方向的驅動停止爲佳。或是，以 具備用以控制由於上述驅動部所產生之上述第1及第2升 降銷之驅動的控制部，上述控制部是在使上述載置位置之 被處理基板朝向上述交接位置上升之途中，於被處理基板 -6- 200818385 保持與上述載置台接觸，下方彎曲成凸狀之狀態時，暫時 使朝向上述第1及第2升降銷之突出方向的驅動停止，於 再次開啓該驅動而使被處理基板自上述載置台離開之後’ 使上述第1及第2升降銷往縮入方向驅動，於被處理基板 下方彎曲成凸狀而接觸於上述載置台之狀態時，停止該驅 動，之後，使上述第1及第2升降銷再次往突出方向驅動 爲佳。 又，以上之本發明之第1觀點中，上述第1及第2升 降銷是構成將藉由搬運構件從下方被支撐而被搬運至上述 交接位置的被處理基板予以交接，上述控制部是在上述第 1及第2升降銷朝向上述交接位置而往突出方向驅動之途 中，於被處理基板保持與上述搬運構件接觸而於下方彎曲 成凸狀之狀態時，暫時停止朝向上述第1及第2升降銷之 突出方向的驅動爲佳。或是，上述第1及第2升降銷是構 成將藉由搬運構件從下方被支撐而被搬運至上述交接位置 的被處理基板予以交接，上述控制部是在上述第1及第2 升降銷朝向上述交接位置而往突出方向驅動之途中，於被 處理基板保持與上述搬連構件接觸而於下方彎曲成凸狀之 狀態時，暫時停止朝向上述第1及第2升降銷之突出方向 的驅動，再次開啓該驅動而使被處理基板自上述搬運構件 離開之後，使上述第1及第2升降銷往縮入方向驅動，於 被處理基板下方彎曲成凸狀而接觸於上述搬運構件之狀態 時，停止該驅動，之後，使上述第1及第2升降銷再次往 突出方向驅動爲佳。 200818385 再者，本發明之第2觀點是提供一種基板處理裝置， 其特徵爲：具備處理容器，用以收容被處理基板；基板載 置機構，被設置在上述處理容器內，具有載置被處理基板 之載置台；和處理機構，對被載置於上述載置台之被處理 基板施予特定處理，上述基板載置機構具有上述第1觀點 所記載之構成。 在本發明之第2觀點中，上述處理機構具有將處理氣 體供給至上述處理容器內之氣體供給機構，和將上述處理 容器內予以排氣之排氣機構，和在上述處理容器內生成上 述處理氣體之電漿的電漿生成機構，對被處理基板施予電 漿處理爲佳。 再者，本發明之第3觀點是提供一種基板交接方法， 藉由對載置具有可撓性之被處理基板之載置台的載置面伸 縮的多數升降銷，支撐被處理基板而在執行交接上述載置 台之上方之基板的交接位置和上述載置台上之載置位置之 間予以升降，其特徵爲：由支撐被處理基板之邊緣部之第 1升降銷，和支撐被處理基板之中央部的第2升降銷構成 上述多數升降銷，於使被處理基板升降時，使上述第1升 降銷突出比上述第2升降銷更高，在被處理基板下方彎曲 成凸狀之狀態下安定地被支撐。 本發明之第3觀點中，可以在上述第1及第2升降銷 各設置檢測被處理基板之荷重的荷重檢測部，根據上述各 荷重檢測部之檢測結果，調整上述第1升降銷和上述第2 升降銷之突出高度之差。 -8- 200818385 再者，以上之本發明之第3觀點中，以在使上述載置 位置之被處理基板朝向上述交接位置而上昇之途中，於被 處理基板保持與上述載置台接觸而於下方彎曲成凸狀之狀 態時，暫時停止朝向上述第1及第2升降銷之突出方向的 驅動爲佳。或是，在使上述載置位置之被處理基板朝向上 述交接位置而上昇之途中，於被處理基板保持與上述載置 台接觸而於下方彎曲成凸狀之狀態時，暫時停止朝向上述 第1及第2升降銷之突出方向的驅動，再次開啓該驅動而 使被處理基板自上述載置台離開之後，使上述第1及第2 升降銷往縮入方向驅動，於被處理基板下方彎曲成凸狀而 接觸於上述載置台之狀態時，停止該驅動，之後，使上述 第1及第2升降銷再次往突出方向驅動爲佳。 又，在以上之本發明之第3觀點中，將上述第1及第 2升降銷構成將藉由搬運構件從下方被支撐而被搬運至上 述交接位置的被處理基板予以交接，在上述第1及第2升 降銷朝向上述交接位置而往突出方向驅動之途中，於被處 理基板保持與上述搬運構件接觸而於下方彎曲成凸狀之狀 態時，暫時停止朝向上述第1及第2升降銷之突出方向的 驅動爲佳。或是，將上述第1及第2升降銷構成將藉由搬 運構件從下方被支撐而被搬運至上述交接位置的被處理基 板予以交接，在上述第1及第2升降銷朝向上述交接位置 而往突出方向驅動之途中，於被處理基板保持與上述搬運 構件接觸而於下方彎曲成凸狀之狀態時，暫時停止朝向上 述第1及第2升降銷之突出方向的驅動，再次開啓該驅動 -9- 200818385 而使被處理基板自上述搬運構件離開之後，使上述第1及 第2升降銷往縮入方向驅動，於被處理基板下方彎曲成凸 狀而接觸於上述搬運構件之狀態時，停止該驅動，之後， 使上述第1及第2升降銷再次往突出方向驅動爲佳。 又，本發明之第4觀點是提供一種電腦可讀取之記憶 媒體，爲記憶有在電腦上動作之控制程式，其特徵爲：上 述控制程式於實行時以執行上述之基板交接方法的方式， 使電腦控制處理裝置。 〔發明效果〕 若藉由本發明，因由支撐被處理基板之邊緣部之第1 升降銷，和支撐被處理基板之中央部的第2升降銷構成多 數升降銷，於使被處理基板升降時，使上述第1升降銷突 出比上述第2升降銷更高，在被處理基板下方彎曲成凸狀 之狀態下安定地被支撐，故即使被處理基板爲大型，亦可 以藉由第1及第2升降銷確實之稱被處理基板，並且可以 有效果抑制因第1及第2升降銷間部份之自重所產生之彎 曲以及第2升降銷之支撐作用力所引起之被處理基板之變 形。因此，可抑制被處理基板對載置台之浮起而抑止處理 不均勻的發生。 【實施方式】 以下，參照附件圖面針對本發明之實施形態予以說明 -10-[Technical Field] The present invention relates to a process of supporting a substrate by supporting a substrate such as a glass substrate for a flat panel display (FPD) on a mounting surface of a mounting table, and executing the transfer mounting table. And a method of transferring the mechanism and the substrate between the mounting positions placed on the mounting table. [Prior Art] In the process of FPD, dry uranium engraving or sputtering, CVD (chemical various treatments) are applied to the substrate to be processed. This treatment is usually performed in a state where the glass substrate is placed on the substrate, and the substrate is The loading is generally performed by placing the mounting surface pin on the mounting table. When the substrate is loaded, the lifting pin is raised to the φ surface, and the lifting pin is transported by the conveying member such as the arm to the lifting pin. When the lift pin is lowered and retracted into the mounter, when the substrate is unloaded, the lift pin is raised and self-loaded, and the lift pin is transported after the substrate is separated from the mount. The lift pin is considered to have an effect on the processing quality. The position of the part is better, but recently the FPD has a large glass substrate of more than 2 m on one side, and it is difficult to support such a large glass substrate only by the side pin. The telescopic lifting pin has a flexible transfer position of the substrate. The loading and unloading of the mounting table in the chamber, such as the substrate mounting of the lifting and lowering (the glass vapor deposition for FPD), and the loading and unloading of the mounting table are carried out. Transfer of the substrate mounting surface of the stage. The substrate on the mounting surface of the repositioning table is transferred to the glass substrate to be oriented in the direction of the edge, and the position of the edge portion is raised and lowered. -4-200818385 Therefore, when the glass substrate is large, the lifting pin is also provided at the central portion. The glass substrate can be reliably supported (for example, refer to Patent Document 1). However, as described above, when the influence on the processing quality is considered, the lift pins provided at the central portion of the glass substrate must be limited to a small number. As a result, as shown in Fig. 9(a), when the glass substrate A is supported by the lift pins B and C at the edge portion position and the central portion position, the glass substrate A is deformed and bent into the lift pins B and C. When the glass substrate A is placed on the mounting table D, the central portion of the deformed glass substrate A floats from the mounting table D as shown in Fig. φ 9 (b). After that. The mounting table has a temperature adjustment function for adjusting the temperature of the glass substrate during the processing. For example, in the plasma etching apparatus, the mounting stage functions as a glass substrate for cooling the plasma etching, so that a part of the glass substrate is self-contained. When the mounting table is floated, the temperature of the glass substrate is uneven in the surface, and the processing is uneven. For example, the etching portion is uniform. [Patent Document 1] JP-A-2002-24 6450 SUMMARY OF INVENTION [Problem to be Solved by the Invention] The present invention has been made in view of such circumstances, and an object thereof is to provide a substrate that is large even if it is to be processed. A substrate processing apparatus capable of reliably supporting a substrate to be processed by a lift pin and having an effect of suppressing deformation of the substrate to be processed, a substrate transfer method, a substrate processing apparatus provided with the substrate mounting mechanism, and a memory useful for implementing such a substrate A computer-readable memory medium for the control program of the handover method. In order to solve the above problems, a first aspect of the present invention provides a substrate mounting mechanism including a mounting table for mounting a flexible substrate. a plurality of lift pins are disposed to extend to the mounting surface of the mounting table, and support the substrate to be processed between the transfer position of the substrate above the transfer table and the mounting position on the mounting table And a driving mechanism for driving the lifting pin, wherein the plurality of lifting pins have a first lifting pin supporting an edge portion of the substrate to be processed, and a second lifting portion supporting a central portion of the substrate to be processed In the above-described driving mechanism, when the substrate to be processed is raised and lowered, the first lift pin is protruded higher than the second lift pin, and is stably supported in a state where the substrate to be processed is bent downward. In the first aspect of the invention, the drive mechanism can drive the first lift pin and the second lift pin independently. Further, in the first aspect of the present invention, the control unit includes a control unit for controlling driving of the first and second lift pins generated by the drive unit, and the control unit is configured to mount the first and second lift pins. When the substrate to be processed is in the state of being raised in contact with the mounting table and being bent downward in a convex shape, the driving of the substrate to be processed is temporarily stopped toward the protruding direction of the first and second lift pins. It is better. Or a control unit for controlling driving of the first and second lift pins generated by the drive unit, wherein the control unit is on the way to raise the substrate to be processed at the placement position toward the transfer position When the substrate to be processed -6-200818385 is kept in contact with the mounting table and the lower portion is bent into a convex shape, the driving in the protruding direction of the first and second lifting pins is temporarily stopped, and the driving is turned on again. After the substrate to be processed is separated from the mounting table, the first and second lift pins are driven in the retracting direction, and when the substrate under the substrate is bent into a convex shape and is in contact with the mounting table, the driving is stopped. It is preferable to drive the first and second lift pins in the protruding direction again. Further, in the first aspect of the present invention, the first and second lift pins are configured to be transferred to a substrate to be processed which is transported from below by the transport member to the transfer position, and the control unit is When the first and second lift pins are driven in the projecting direction toward the transfer position, the substrate to be processed is temporarily closed to the first and second sides while being held in contact with the transport member and bent downward in a convex shape. The driving of the protruding pin in the protruding direction is preferred. Alternatively, the first and second lift pins are configured to be transferred to a substrate to be processed which is transported from below by the transport member to the transfer position, and the control unit is oriented at the first and second lift pins. When the substrate to be processed is held in contact with the above-described transporting member and is bent downward in a convex shape, the driving of the first and second lift pins in the protruding direction is temporarily stopped. When the drive substrate is opened again and the substrate to be processed is separated from the transport member, the first and second lift pins are driven in the retracting direction, and when the substrate under the substrate is bent into a convex shape and is in contact with the transport member, After the driving is stopped, it is preferable that the first and second lift pins are driven in the protruding direction again. Further, a second aspect of the present invention provides a substrate processing apparatus including: a processing container for accommodating a substrate to be processed; and a substrate mounting mechanism provided in the processing container and having a mounting processed The substrate mounting table and the processing means apply a specific process to the substrate to be processed placed on the mounting table, and the substrate mounting mechanism has the configuration described in the first aspect. According to a second aspect of the present invention, the processing device includes a gas supply mechanism that supplies a processing gas into the processing container, and an exhaust mechanism that exhausts the processing container, and generates the processing in the processing container. It is preferable that the plasma generating mechanism of the plasma of the gas is subjected to plasma treatment of the substrate to be processed. According to a third aspect of the present invention, there is provided a substrate transfer method for supporting a substrate to be processed by performing a transfer of a plurality of lift pins that expand and contract a mounting surface on a mounting table on which a flexible substrate is placed. A lifting and lowering position of the substrate above the mounting table and a mounting position on the mounting table are characterized by: a first lifting pin supporting the edge portion of the substrate to be processed, and a central portion supporting the substrate to be processed The second lift pin constitutes the plurality of lift pins, and when the substrate to be processed is moved up and down, the first lift pin is protruded higher than the second lift pin, and is stably placed in a convex state below the substrate to be processed. support. According to a third aspect of the present invention, the load detecting unit that detects the load of the substrate to be processed is provided in each of the first and second lift pins, and the first lift pin and the first portion are adjusted based on the detection results of the load detecting units. 2 The difference in the protruding height of the lift pins. -8-200818385 In the third aspect of the present invention, the substrate to be processed is held in contact with the mounting table while the substrate to be processed at the mounting position is raised toward the transfer position. When the state is curved in a convex shape, it is preferable to temporarily stop the driving in the protruding direction of the first and second lift pins. Or, when the substrate to be processed is brought into contact with the mounting table and is bent downward in a convex shape while the substrate to be processed is raised toward the transfer position, the substrate is temporarily stopped toward the first and The driving of the second lifting pin in the protruding direction is turned on again, and after the substrate to be processed is separated from the mounting table, the first and second lifting pins are driven in the retracting direction, and are bent into a convex shape below the substrate to be processed. When the state is contacted with the mounting table, the driving is stopped, and then the first and second lifting pins are preferably driven in the protruding direction again. Further, in the third aspect of the present invention, the first and second lift pins are configured to be transferred to a substrate to be processed which is transported from below by the transport member to the transfer position, and the first When the second lifting pin is driven in the protruding direction toward the delivery position, the substrate to be processed is held in contact with the conveying member and bent downward in a convex shape, and the first and second lifting pins are temporarily stopped. The driving in the protruding direction is better. Alternatively, the first and second lift pins are configured to be transferred to a substrate to be processed which is transported from below by the transport member to the transfer position, and the first and second lift pins are oriented toward the transfer position. When the substrate to be processed is held in contact with the conveyance member and is bent downward in a convex shape while being driven in the projecting direction, the driving in the protruding direction of the first and second lift pins is temporarily stopped, and the drive is again turned on - 9-200818385 After the substrate to be processed is separated from the transport member, the first and second lift pins are driven in the retracting direction, and when the substrate under the substrate is bent into a convex shape and comes into contact with the transport member, the process is stopped. After the driving, the first and second lift pins are preferably driven in the protruding direction again. Furthermore, a fourth aspect of the present invention provides a computer readable memory medium for storing a control program for operating on a computer, wherein the control program is executed to execute the substrate transfer method described above. Let the computer control the processing device. [Effect of the Invention] According to the present invention, the first lift pin supporting the edge portion of the substrate to be processed and the second lift pin supporting the central portion of the substrate to be processed constitute a plurality of lift pins, and when the substrate to be processed is moved up and down, The first lift pin protrudes higher than the second lift pin, and is stably supported while being bent downward in a convex shape. Therefore, even if the substrate to be processed is large, the first and second lifts can be used. The pin is called a substrate to be processed, and it is possible to suppress the deformation of the substrate to be processed due to the bending caused by the self-weight of the first and second lift pins and the supporting force of the second lift pin. Therefore, it is possible to suppress the occurrence of unevenness in processing by suppressing the floating of the substrate to be processed by the substrate to be processed. [Embodiment] Hereinafter, an embodiment of the present invention will be described with reference to an attached drawing.
200818385 第1圖爲具備有本發明所涉及之基板載置機構之 處理裝置之一實施形態的電漿触刻裝置之側面方向之 剖面圖，第2圖爲該平面方向之槪略剖面圖。 該電漿鈾刻裝置1是當作對FPD用之玻璃基板（ 單稱爲「基板」）G執行蝕刻之電容耦合型平行平板 蝕刻裝置而構成。FPD可例示出液晶顯示器（LCD ) 激發光裝置（Electro Luminescence; EL)顯示器、 顯示面板（PDP )等。電漿蝕刻裝置1具備有當作收 板G之處理容器的腔室2。腔室2是由例如表面被耐 處理（陽極氧化處理）之鋁所構成，對應於基板G之 而形成四角筒形狀。 在腔室2內之底壁形成有當作載置基板G之載置 承載器4。承載器4是對應於基板G之形狀被形成匹 狀或是柱狀，具有由金屬等之導電性材料所構成之基 ，和由覆蓋基材4a之邊緣的絕緣材料所構成之絕緣 4b，和設置成覆蓋基材4a及絕緣構件4b而支撐該 絕緣材料所構成之絕緣構件4c。基材4a連接有用 高頻電力之供電線23，於該供電線23罹接有整合器 高頻電源25。自高頻電源25施加例如13.56MHz I 電力至承載器4,依此承載器4構成當作下部電極ϋ 功能。再者，承載器4內藏有用以吸附載置之基板（ 圖式之靜電吸附機構。 在腔室2之上部或是上壁，是供給處理氣體至丨 內並且以與承載器4對向之方式設置有當作上部電| 基板 槪略 幾下 電漿 、電 電漿 容基 酸鋁 形狀 台的 角板 材4a 構件 :之由 ，供給 24及 .高頻 ‘發揮 之無 【室2 丨而發 -11 - 200818385 揮功能之噴淋頭11 °噴淋頭11形成有使處理氣體擴散至 內部之氣體擴散空間12，並且形成有將處理氣體吐出至下 面或是承載器4之對向面的多數吐出孔13。該噴淋頭π 爲接地，與承載器4構成一對平行平板電極。 在噴淋頭11之上面設置氣體導入口 14，在該氣體導 入口 14連接有處理氣體供給管15，在該處理氣體管15經 閥1 6及質量流量控制器1 7，連接有處理氣體供給源1 8。 自處理氣體供給源1 8供給用以蝕刻之處理氣體。作爲處 理氣體可以使用鹵系氣體、〇2氣體、氬氣體等、通常在該 領域所使用之氣體。 腔室2之底壁連接有排氣管19，該排氣管19連接有 排氣裝置20。排氣裝置20具備有渦輪分子泵等之真空泵 ，依此構成能夠將腔室2內抽真空至特定減壓環境。在腔 室2之側壁形成有用以搬入搬出基板G之搬入出口 2 1， 並且設置有開關該搬入搬出口 2 1之閘閥22，構成於搬入 搬出口 2 1之開放時，基板G藉由當作搬運構件之搬運手 臂40 (參照第2圖、第4圖之假想線），在從下方支撐之 狀態下在鄰接之無圖式的負載鎖定室之間被搬運。 在承載器4之基板載置面形成有充塡He氣體等之調 溫氣體的無圖式冷卻空間，該調溫氣體是用以冷卻於電漿 蝕刻處理時載置於承載器4而被吸附之基板G，以通過承 載器4內貫通腔室2之底壁的方式，設置用以將調溫氣體 供給至該冷卻空間之調溫氣體供給線4 1。於調溫氣體供給 線4 1連接有調溫氣體供給源42，並且設置有用以調整調 -12- 200818385 溫氣體之供給壓的壓力控制閥43。 腔室2之底壁及承載器4是於承載器4之邊緣部位置 及中央部位置（比邊緣部位置內側或是靠中央位置）各形 成有貫通該些之插通孔7a、7b。插通孔7a是在各邊部隔 著特定間隔以兩處平均設置而形成合計8處，插通孔7b 是例如以與承載器4之對向的一對之邊平行配列之方式， 隔著特定間隔而形成兩處。插通孔7a、7b各自對承載器4 之基板載置面能夠伸縮地插入自下方支撐基板G而升降之 升降銷8a、8b (第1及第2升降銷）。升降銷8a、8b各 被設置成於突出時抵接於基板G之邊緣部及中央部，藉由 無圖示之定位用軸襯定位於徑方向或是寬度方向而插入至 插通孔7a、7b內。 第3圖爲基板載置機構之槪略圖。 升降銷8 a、8b各如第3圖所示般，下部突出於腔室2 之外側，下端部連接於驅動部9a、9b，藉由該驅動部9a 、9b之驅動而升降，依此構成對承載器4之基板載置面突 出及縮入。驅動部9a9b各使用例如步進馬達而構成。 升降銷8a、8b之下部各形成有突緣26，在各突緣26 連接有設置成圍繞升降銷8a、8b之可伸縮之伸縮管27之 一端部（下端部），該伸縮管27之另一端部（上端部） 連接於腔室2之底壁。依此，伸縮管27追隨於升降銷8a 、8b之升降而伸縮，並且密封插通孔7a、7b和升降管8a 、8b之間隙。 驅動部9a、9b之驅動爲藉由具備微處理器（電腦） -13- 200818385 之控制器3 1而個別被控制之構成，依此，構成升降銷8 a 和升降銷8 b可獨立升降。控制器3 1連接有工程管理者爲 了管理驅動部9a、9b之驅動執行指令之輸入操作等之鍵 盤，或由將驅動部9a、9b之驅動狀況予以可視化而顯示 之顯示器所構成之使用者介面3 2，和用以控制器3 1之控 制實現驅動部9a、9b之驅動的控制程式，或儲存記錄有 驅動條件資料等之處理程式的記憶部3 3。然後，因應所需 ，以來自使用者介面3 1之指示自任意處理程式叫出記憶 部33而使控制器31實行，依此在控制器31之控制下執 行驅動部9a、9b之驅動及停止。上述處理程式利用例如 儲存於CD-ROM、硬碟、快閃記憶體等之電腦可讀取之記 憶媒體之狀態者，或是亦可自其他裝置經例如專用回線隨 時傳送或利用。 控制器3 1、使用者介面3 1及記憶部3 3及記憶部3 3 是構成控制藉由驅動部9a、9b產生升降銷8a、8b升降之 控制部，承載器4、升降銷8a、8b、驅動部9a、9b及控 制部構成基板載置機構。 如此構成之電漿蝕刻裝置1首先在藉由閘閥22開啓 搬入搬出口 21之狀態下，藉由搬運手臂40 (第2圖、第 4圖之假想線）將基板G搬入至搬入搬出口 21而搬運至 承載器4之上方時，則使各升降銷8a、8b上昇而突出至 比搬運手臂40更高。並且，設置成各升降銷8a、8b和搬 運手臂40互相不接觸。依此，基板G從搬運手臂40上被 轉移至升降銷8 a、8b上。此時，如上述般，以基板G之 -14- 200818385 荷重分散至各升降銷8a、8b之方式，使升降銷8a位於比 升降銷8b更高出特定量，在下方彎曲凸狀之狀態下藉由 各升降銷8a、8 b支撐基板G。搬運手臂40自搬入搬出口 20退出至腔室2外，或藉由閘閥22關閉搬入搬出口 21， 並且，一面將升降銷8a保持比升降銷8b高出特定量之高 度，一面使升降銷8a、8b下降。然後，以升降銷8b、升 降交8a之順序使沉入至承載器4之載置面，將基板G載 置在承載器4。基板G之荷重因均衡佳分散至各升降銷8a 、8b，故基板G可以抑制因升降銷8a、8b之支撐反力所 產生之變形，尤其因升降銷8b所產生之中央部之變形， 可以在全面或是幾乎全面接觸於承載器4之載置面。 於藉由閘閥22關閉搬入搬出口 21，將基板G載置在 承載器4時，藉由排氣裝置20將腔室2內抽真空至特定 真空度。接著，藉由質量流量控制器1 7自處理氣體供給 源1 8流量調整處理氣體，並經處理器體供給管1 5、氣體 導入口 1 4及噴淋頭1 1供給至腔室2內，在該狀態下將直 流電壓施加至靜電吸附機構而使基板G吸附於承載器4。 然後，自高頻電源25經整合器24施加高頻電力至承 載器4，使高頻電場產生在當作下部電極之承載器4和當 作上部電極之噴淋頭Π之間而使腔室2內之處理氣體予 以電漿化，並且，爲了迴避基板G之溫度變化，例如溫度 上昇，藉由壓力控制閥43將來自調溫壓力供給源42之調 溫氣體調整成特定壓力，並且經調溫氣體供給線4 1導入 至被承載器4吸附之基板G之背面側之冷卻空間。在該狀 -15- 200818385 態下，藉由處理氣體之電漿對基板G施予蝕刻處理。 當對基板G施予蝕刻處理時，則停止來自高頻電 25之高頻電力之施加，並且停止處理氣體及調溫氣體之 入，並且解除藉由靜電吸附機構所產生基板G的吸附。 著，藉由閘閥22開啓搬入搬出口 2 1，並且與接收來自 運手臂40之基板G相同，使升降銷8a、8b上昇，使基 G下方彎曲成凸狀而自承載器4朝上方離開。之後，當 運手臂40自搬入搬出口 21進入至腔室2內時，則使升 銷8a、8b下降。依此，基板G自升降銷8a、8b轉移至 運手臂40上。然後，基板G藉由搬運手臂40自搬入搬 口 21被搬出至腔室2外。 本實施形態中，藉由將升降銷配置承比升降銷8b 高出特定量而在下方彎曲成凸狀之狀態下支撐基板G， 此因可以抑止因升降銷8a、8b間部份之彎曲以及升降 8b之支撐作用力所引起之基板G變形，並抑止基板G 當作下部電極發揮功能之承載器4浮起，故可以於電漿 刻處理時藉由自承載器4所供給之調溫氣體，將基板G 整個表面均等予以冷卻，依此能夠有效果抑止蝕刻不均 發生。再者，飩刻處理後也相同，因藉由將升降銷8a 置比升降銷8b高出特定量而在下方彎曲承凸狀之狀態 支撐基板G，可以抑止由於升降銷8b之支撐作用力所 起之基板G變形，故可以提高蝕刻之後處理的品質。 接著，針對藉由升降銷8a、8b接收來自搬運手臂 及承載器4之基板G之一例予以說明。 源 導 接 搬 板 搬 降 搬 出 更 依 銷 對 飩 在 勻 配 下 引 -16- 40 200818385 第5圖爲用以說明藉由升降銷8a、8b接收來自搬運 手臂40及承載器4之基板G之態樣的圖式。 藉由搬運手臂40所搬運之基板G有被該搬運手臂1〇 吸附之情形。此時，當將升降銷8a、8b —次上昇而自搬 運手臂40接收到基板G時，於自吸附有基板G之搬運手 臂40剝落時，受到衝擊而引起大振動，有引起位置偏移 破損之虞。在此，於藉由升降銷8a、8b自搬運手臂40接 收基板G時，首先如第5圖（a )所示般，將升降銷8 a配 置成比升降銷8b高出特定量，使升降銷8a、8b上昇，如 第5圖（b)所示般，基板G保持與搬運手臂40接觸而抵 接於升降銷8 a，在下方彎曲成凸狀之狀態，更佳爲基板G 將要自搬運手臂40離開之前的狀態時，暫時停止升降銷 8a、8b之上昇。依此，即使基板G吸附於搬運手臂40時 ，因漸漸自搬運手臂40剝落基板G，故可以抑制基板G 之振動。然後，如第5圖（c )所示般，再次開啓升降銷 8a、8b之上昇，使基板G自搬運手臂40離開。依此，能 夠將基板G從搬運手臂40上安全轉移至升降銷8a、8b上 〇 並且’如第5圖（c )所示般，於再次開啓升降銷8a 、8b，使基板G自搬運手臂40離開時，例如藉由搬運手 臂40吸附中央部，於基板G產生振動時，則如第5圖（d )所示般，使升降銷8a、8b下降。然後，如第5圖（e ) 所示般’基板G下方彎曲成凸狀而再次接觸於搬運手臂 40之狀態’更佳爲緊跟著基板G接觸於搬運手臂4 0之後 -17- 200818385 的狀態時，停止升降銷8a、8b之下降。在該狀態中，因 基板G和搬運手臂之接觸部份爲小’有基板G再次吸附 於搬運手臂40之虞，故可以確實抑制基板G之振動。之 後，如第5圖（f)所示般，藉由再次使升降銷8a、8b上 昇，使基板G自搬運手臂40離開，則能夠藉由升降銷8a 、8b將基板G自搬運手臂40上安全轉移。 第6圖爲用以說明藉由升降銷8a、8b接收來自承載 器4之基板G之態樣的圖式。 蝕刻處理後之基板G因有即使解除藉由靜電吸附機構 之吸附，亦吸附於當作下部電極之承載器4之情形，故藉 由升降銷8a、8b執行來自承載器4之基板G的接收，也 與來自搬運手臂40之接收相同爲佳。首先，如第6圖（a )所示般，以將升降銷8a配置成比升降銷8b高出特定量 之方式，使升降銷8a、8b上昇（即使緊使升降銷8a上昇 亦可〇，如第6圖所示般，在保持基板G與搬運手臂40 接觸而抵接於升降銷8a，在下方彎曲成凸狀之狀態，更佳 爲基板G將要自搬運手臂40離開之前的狀態時，暫時停 止升降銷8 a、8 b之上昇。然後，如第6圖（c )所示般， 再次開啓升降銷8a、8b之上昇，使基板G自搬運手臂40 離開。依此，能夠抑制基板G之振動，使基板G安全從 承載器4轉移至升降銷8a、8b上。 再者，如第6圖（c )所示般，再次開啓升降銷8a、 8b ’使基板G自承載器4離開時，例如藉由承載器4吸附 中央部，於基板G產生振動時，則如第6圖（d )所示般 -18- 200818385 ，使升降銷8a、8b下降。然後，如第6圖（e )所示般， 基板G下方彎曲成凸狀而再次接觸於承載器4之狀態，更 佳爲緊跟著基板G接觸於承載器4之後的狀態時，停止升 降銷8a、8b之下降。之後，如第6圖（f)所示般，藉由 再次使升降銷8a、8b上昇，使基板G自搬運手臂40離開 。依此，可以更確實抑制基板G之振動，能夠藉由升降銷 8a、8b安全將基板G自承載器4上轉移。 接著，調整升降銷8a和升降銷8b之突出高度之差， 並且，測量支撐基板G之時之作用於各升降銷8a、8b之 基板G之荷重。基板G之尺寸（縱X橫）爲1 8 00mm X 1 5 00mm，作用於各升降銷8a、8b之基板G之荷重之測量 ，是如第7圖所示般，藉由設置在各升降銷8a、8b之前 端部之荷重檢測部之荷重檢測器50而執行。將結果表示 於第8圖。並且，第8圖中，將縱軸設爲（各荷重感測器 50所取得之測量値），將橫軸設爲（升降銷8b之高度-升 降銷8 a之高度）。 如第8圖所示般，於將升降銷8a配置成比升降銷8b 些許高之時，雖然藉由各荷重感測器50所取得之測量値 產生大偏差程度，但是隨著升降銷8a和升降銷8b之高度 之差變大，藉由各荷重感測器5 0所取得之測量値之偏差 程度變小，於將升降銷8a配置成比升降銷8b高出特定量 ，在此例如20mm時，則比將升降銷配置成與升降銷8b 相等高度之時，或是升降銷8 a配置成比升降銷8 b低之時 ，藉由各荷重感測器5 0所取得之測定値之偏差程度變小 -19- 200818385 。即是，如本實施形態般，確認出藉由將升降銷8 a配置 成比升降銷8b高出特定量，可以均衡佳將基板G之荷重 分散至各升降銷8a、8b。因此，若藉由本實施形態，可以 抑止基板G之變形，並且可以安定基板G而予以支撐。 以上，雖然說明本發明之最佳實施形態，但是本發明 並不限定於上述實施形態，可作各種變更。上述實施形態 雖然以設置多數根例如兩根支撐基板中央部之升降銷，但 是即使1根該升降銷亦可。再者，上述實施形態中，雖然 使用配置成比支撐基板周邊緣部之升降銷支撐基板中央部 之升降銷高出特定量之獨立驅動部，但是並不限定於此， 亦可重新改變升降銷之長度，藉由相同驅動部驅動各升降 銷，重新改變各升降銷之長度，並且亦可使用獨立之驅動 部。並且，上述實施態中，雖然僅針對適用於對下部電極 施加高頻電力之RIE型之電容耦合型平行平板電漿蝕刻裝 置之例予以說明，但並不限定於此，亦可以適用灰化、 CVD成膜等之其他電漿處理裝置，亦可以適用於將基板載 置於載置台而予以處理之電漿裝置以外之基板處理裝置全 部。並且，雖然在上述實施形態中，針對適用於FPD用之 玻璃基板之例予以說明，但是亦可適用於FPD用之玻璃基 板以外之具有可撓性之基板全部。 【圖式簡單說明】 第1圖爲具備有本發明所涉及之基板載置機構之基板 處理裝置之一實施形態的電漿裝置之側面方向之槪略剖面 -20- 200818385 圖。 第2圖爲電漿鈾刻裝置之平面方向之槪略剖面圖。 第3圖爲基板載置機構之槪略圖。 第4圖爲用以說明藉由屬於基板載置機構之構成要素 的升降銷支撐基板之態樣的圖式。 第5圖爲用以說明藉由升降銷接收來自搬運手臂之基 板的態樣之圖式。 第6圖爲用以說明藉由升降銷接收來自承載器之基板 的態樣之圖式。 第7圖爲用以說明作用於升降銷之基板之荷重的測量 方法之圖式。 第8圖爲表示第7圖所示之測定方法所取得之測定結 果之圖式。 第9圖爲以往之基板載置機構之槪略圖|。 【主要元件符號說明】 1 :電漿飩刻裝置（基板處理裝置：電獎處理裝置） 2 :腔室（處理容器） 4 :承載器（載置台） 8a :升降銷（第1升降銷） 8b :升降銷（第2升降銷） 9a、9b :驅動部（驅動機構） 1 5 :處理氣體供給管 1 8 :處理氣體供給源 -21 - 200818385 1 9 :排氣管 20 :排氣裝置 2 5 :高頻電源 3 1 :控制器 3 2 :使用者介面 3 3 :記憶部 40 :搬運手臂（搬運構件） 50 :荷重感測器（荷重檢測部） G :玻璃基板（被處理基板）200818385 Fig. 1 is a cross-sectional view showing a side surface direction of a plasma etching apparatus according to an embodiment of a processing apparatus including a substrate mounting mechanism according to the present invention, and Fig. 2 is a schematic cross-sectional view in the plane direction. This plasma uranium engraving apparatus 1 is constituted by a capacitive coupling type parallel plate etching apparatus which performs etching on a glass substrate (referred to as "substrate") G for FPD. The FPD can be exemplified by a liquid crystal display (LCD) electroluminescence (EL) display, a display panel (PDP), or the like. The plasma etching apparatus 1 is provided with a chamber 2 as a processing container for the receiving plate G. The chamber 2 is made of, for example, aluminum whose surface is treated by anodization (anodizing treatment), and forms a rectangular tube shape corresponding to the substrate G. A carrier 4 as a mounting substrate G is formed on the bottom wall in the chamber 2. The carrier 4 is formed in a shape of a column or a column corresponding to the shape of the substrate G, has a base made of a conductive material such as metal, and an insulation 4b composed of an insulating material covering the edge of the substrate 4a, and The insulating member 4c composed of the insulating material is supported to cover the base material 4a and the insulating member 4b. The substrate 4a is connected to a power supply line 23 for high-frequency power, and an integrator high-frequency power source 25 is connected to the power supply line 23. From the high frequency power source 25, for example, 13.56 MHz I power is applied to the carrier 4, whereby the carrier 4 is configured to function as a lower electrode. Furthermore, the carrier 4 has a substrate for adsorbing and placing thereon (the electrostatic adsorption mechanism of the drawing. In the upper part or the upper wall of the chamber 2, the processing gas is supplied into the crucible and is opposed to the carrier 4 The method is provided as a corner plate 4a which is a part of the plasma and the electric plasma-capacitor aluminum-shaped table as the upper part of the substrate; the material is supplied, and the supply of 24 and the high-frequency 'has not played [room 2 丨 - - 11 - 200818385 Sprinkler head 11 ° The shower head 11 is formed with a gas diffusion space 12 for diffusing the process gas into the inside, and is formed with a plurality of discharges for discharging the process gas to the lower surface or the opposite surface of the carrier 4 The shower head π is grounded, and constitutes a pair of parallel plate electrodes with the carrier 4. A gas introduction port 14 is provided on the upper surface of the shower head 11, and a processing gas supply pipe 15 is connected to the gas introduction port 14, The processing gas pipe 15 is connected to the processing gas supply source 18 via a valve 16 and a mass flow controller 17. The processing gas for etching is supplied from the processing gas supply source 18. As the processing gas, a halogen-based gas can be used. 〇2 gas, argon A gas, such as a gas, is generally used in the field. The bottom wall of the chamber 2 is connected to an exhaust pipe 19, and the exhaust pipe 19 is connected to an exhaust device 20. The exhaust device 20 is provided with a vacuum pump such as a turbo molecular pump. According to this configuration, the inside of the chamber 2 can be evacuated to a specific pressure reducing environment. The side wall of the chamber 2 is formed with a loading port 2 1 for loading and unloading the substrate G, and a gate valve 22 for opening and closing the loading and unloading port 2 is provided. When the loading/unloading port 21 is opened, the substrate G is supported by the transporting arm 40 (see the imaginary line of FIG. 2 and FIG. 4) as a transporting member, and is adjacent to each other in a state of being supported from below. The load lock chamber is transported between the load lock chambers. The substrate mounting surface of the carrier 4 is formed with a non-pattern cooling space filled with a tempering gas such as He gas, which is used for cooling during plasma etching. The substrate G placed on the carrier 4 and adsorbed is provided with a temperature-regulating gas supply line 41 for supplying a temperature-regulating gas to the cooling space so as to pass through the bottom wall of the chamber 2 in the carrier 4. a temperature control gas is connected to the temperature control gas supply line 4 1 The source 42 is supplied, and a pressure control valve 43 is provided for adjusting the supply pressure of the -12 - 200818385 warm gas. The bottom wall of the chamber 2 and the carrier 4 are at the edge portion and the central portion of the carrier 4 (ratio The insertion holes 7a and 7b are formed in the inner side or the center of the edge portion. The insertion holes 7a are formed by arranging the two sides at a predetermined interval at a predetermined interval. The hole 7b is formed in parallel with a pair of sides facing the carrier 4, for example, and is formed at a predetermined interval. The insertion holes 7a and 7b are each extendable to the substrate mounting surface of the carrier 4. The lift pins 8a and 8b (the first and second lift pins) that are lifted and lowered from the lower support substrate G are inserted. Each of the lift pins 8a and 8b is provided so as to be in contact with the edge portion and the center portion of the substrate G when protruding, and is inserted into the insertion hole 7a by positioning the bushing (not shown) in the radial direction or the width direction. Within 7b. Fig. 3 is a schematic diagram of a substrate mounting mechanism. As shown in Fig. 3, the lift pins 8a and 8b each protrude from the outside of the chamber 2, and the lower end portion is connected to the drive portions 9a and 9b, and is driven by the drive portions 9a and 9b to be lifted and lowered. The substrate mounting surface of the carrier 4 is protruded and retracted. Each of the drive units 9a9b is configured using, for example, a stepping motor. A flange 26 is formed on each of the lower portions of the lift pins 8a, 8b, and one end (lower end portion) of the telescopic tube 27 that is disposed to surround the lift pins 8a, 8b is connected to each flange 26, and the extension tube 27 is another One end portion (upper end portion) is connected to the bottom wall of the chamber 2. Accordingly, the bellows 27 expands and contracts following the lifting and lowering of the lift pins 8a, 8b, and seals the gap between the insertion holes 7a, 7b and the lift pipes 8a, 8b. The driving of the driving units 9a and 9b is individually controlled by the controller 31 having the microprocessor (computer) -13 - 200818385. Accordingly, the lifting pin 8 a and the lifting pin 8 b can be independently raised and lowered. The controller 31 is connected to a keyboard which is managed by the project manager to manage the drive operation of the drive units 9a and 9b, or a user interface formed by the display which visualizes the driving conditions of the drive units 9a and 9b. 3 2, a control program for driving the drive units 9a, 9b by the control of the controller 31, or a memory unit 33 for storing a processing program for recording the drive condition data. Then, if necessary, the controller 31 is called from the arbitrary processing program by the instruction from the user interface 31, and the controller 31 is executed, whereby the driving and stopping of the driving units 9a and 9b are performed under the control of the controller 31. . The above processing program utilizes, for example, the state of the memory readable by a computer stored on a CD-ROM, a hard disk, a flash memory or the like, or may be transmitted or utilized from other devices via, for example, a dedicated return line. The controller 3 1 , the user interface 3 1 , the memory unit 3 3 and the memory unit 3 3 are control units for controlling the elevation of the lift pins 8a and 8b by the drive units 9a and 9b, and the carrier 4 and the lift pins 8a and 8b. The drive units 9a and 9b and the control unit constitute a substrate mounting mechanism. In the plasma etching apparatus 1 configured as described above, the substrate G is carried into the loading/unloading port 21 by the transport arm 40 (the imaginary line of FIGS. 2 and 4) while the loading and unloading port 21 is opened by the gate valve 22. When transported to the upper side of the carrier 4, the lift pins 8a and 8b are raised to protrude higher than the transport arm 40. Further, the lift pins 8a, 8b and the transport arm 40 are not in contact with each other. Accordingly, the substrate G is transferred from the carrying arm 40 to the lift pins 8a, 8b. At this time, as described above, the weight of the substrate G is shifted to the respective lift pins 8a and 8b, so that the lift pin 8a is positioned higher than the lift pin 8b by a specific amount, and the convex shape is bent downward. The substrate G is supported by the lift pins 8a, 8b. The transport arm 40 is retracted from the loading/unloading port 20 to the outside of the chamber 2, or the loading/unloading port 21 is closed by the gate valve 22, and the lift pin 8a is held at a height higher than the lift pin 8b by a specific amount, and the lift pin 8a is provided. , 8b dropped. Then, the mounting pins are sunk to the mounting surface of the carrier 4 in the order of the lift pins 8b and the lift-down intersections 8a, and the substrate G is placed on the carrier 4. Since the load of the substrate G is well dispersed to the respective lift pins 8a and 8b, the substrate G can suppress the deformation caused by the supporting reaction force of the lift pins 8a and 8b, and in particular, the deformation of the central portion due to the lift pins 8b can be The mounting surface of the carrier 4 is fully or almost fully contacted. When the loading/unloading port 21 is closed by the gate valve 22 and the substrate G is placed on the carrier 4, the inside of the chamber 2 is evacuated to a specific degree of vacuum by the exhaust unit 20. Then, the mass flow controller 1 7 adjusts the processing gas from the processing gas supply source 18 and supplies it to the chamber 2 via the processor body supply pipe 15 , the gas introduction port 14 , and the shower head 1 1 . In this state, a DC voltage is applied to the electrostatic adsorption mechanism to adsorb the substrate G to the carrier 4. Then, high frequency power is applied from the high frequency power source 25 to the carrier 4 via the integrator 24, so that a high frequency electric field is generated between the carrier 4 as the lower electrode and the shower head 当作 as the upper electrode. The processing gas in the plasma is pulverized, and the temperature-regulating gas from the temperature-regulating pressure supply source 42 is adjusted to a specific pressure by the pressure control valve 43 in order to avoid the temperature change of the substrate G, for example, the temperature rise, and is adjusted. The warm gas supply line 41 is introduced into the cooling space on the back side of the substrate G adsorbed by the carrier 4. In the state of the shape -15-200818385, the substrate G is subjected to an etching treatment by a plasma of a process gas. When the substrate G is subjected to an etching treatment, the application of the high-frequency power from the high-frequency power 25 is stopped, the processing gas and the temperature-regulating gas are stopped, and the adsorption of the substrate G by the electrostatic adsorption mechanism is released. The gate valve 22 opens the loading/unloading port 2 1, and similarly to the substrate G that receives the traveling arm 40, the lift pins 8a and 8b are raised, and the base G is bent downward to be convex, and is separated upward from the carrier 4. Thereafter, when the transport arm 40 enters the chamber 2 from the loading/unloading port 21, the lift pins 8a and 8b are lowered. Accordingly, the substrate G is transferred from the lift pins 8a, 8b to the transport arm 40. Then, the substrate G is carried out of the chamber 2 by the transport arm 40 from the carry-in/out port 21. In the present embodiment, the lift pin arrangement is supported by the base plate G in a state in which the lift pin 8b is raised by a specific amount and bent downward in a convex shape, thereby suppressing the bending of the portion between the lift pins 8a and 8b. The substrate G caused by the supporting force of the lifting 8b is deformed, and the carrier 4 which functions as the lower electrode of the substrate G is prevented from floating, so that the temperature regulating gas supplied from the carrier 4 can be used in the plasma etching process. The entire surface of the substrate G is uniformly cooled, whereby it is possible to suppress the occurrence of uneven etching. In addition, the same applies to the squeezing process, and the support pin G is supported in a state in which the lift pin 8a is bent higher than the lift pin 8b by a specific amount, and the support force of the lift pin 8b can be suppressed. Since the substrate G is deformed, the quality of the treatment after etching can be improved. Next, an example of receiving the substrate G from the transport arm and the carrier 4 by the lift pins 8a and 8b will be described. The source guides the loading and unloading, the loading and unloading, and the pinning, the matching, and the matching. 16- 40 200818385 FIG. 5 is a view for explaining the state of receiving the substrate G from the carrying arm 40 and the carrier 4 by the lifting pins 8a and 8b. Kind of schema. The substrate G transported by the transport arm 40 is adsorbed by the transport arm 1〇. At this time, when the lift pins 8a and 8b are lifted up and the substrate G is received from the transport arm 40, when the transport arm 40 from which the substrate G is adsorbed is peeled off, a large vibration is caused by the impact, and the positional displacement is caused. After that. Here, when the substrate G is received from the transport arm 40 by the lift pins 8a and 8b, first, as shown in Fig. 5(a), the lift pins 8a are arranged to be higher than the lift pins 8b by a specific amount to elevate The pins 8a and 8b are raised. As shown in Fig. 5(b), the substrate G is held in contact with the transport arm 40 and abuts against the lift pins 8a, and is bent downward in a convex shape. More preferably, the substrate G is to be self-contained. When the carrying arm 40 is in the state before leaving, the rise of the lift pins 8a and 8b is temporarily stopped. As a result, even when the substrate G is adsorbed to the transport arm 40, the substrate G is gradually peeled off from the transport arm 40, so that the vibration of the substrate G can be suppressed. Then, as shown in Fig. 5(c), the lift pins 8a and 8b are opened again to separate the substrate G from the transport arm 40. Accordingly, the substrate G can be safely transferred from the transport arm 40 to the upper and lower sides of the lift pins 8a, 8b and, as shown in Fig. 5(c), the lift pins 8a, 8b can be opened again, and the substrate G can be self-transported. When the 40 leaves, for example, when the center portion is sucked by the transport arm 40 and vibration occurs on the substrate G, the lift pins 8a and 8b are lowered as shown in Fig. 5(d). Then, as shown in Fig. 5(e), 'the state under which the substrate G is bent into a convex shape and is again brought into contact with the carrying arm 40' is more preferably followed by the substrate G contacting the carrying arm 40. -17-200818385 In the state, the lowering of the lift pins 8a, 8b is stopped. In this state, since the contact portion between the substrate G and the transport arm is small, the substrate G is again adsorbed on the transport arm 40, so that the vibration of the substrate G can be surely suppressed. Then, as shown in FIG. 5(f), by raising the lift pins 8a and 8b again and moving the substrate G away from the transport arm 40, the substrate G can be transported from the transport arm 40 by the lift pins 8a and 8b. Safe transfer. Fig. 6 is a view for explaining a state in which the substrate G from the carrier 4 is received by the lift pins 8a, 8b. Since the substrate G after the etching treatment is adsorbed to the carrier 4 as the lower electrode even if the adsorption by the electrostatic adsorption mechanism is released, the reception of the substrate G from the carrier 4 is performed by the lift pins 8a, 8b. It is also preferable to the reception from the carrying arm 40. First, as shown in Fig. 6 (a), the lift pins 8a are arranged to be raised by a specific amount higher than the lift pins 8b, so that the lift pins 8a and 8b can be raised (even if the lift pins 8a are raised, the lift pins 8a can be raised. As shown in Fig. 6, when the holding substrate G is in contact with the transport arm 40 and abuts against the lift pin 8a, and is bent downward in a convex shape, more preferably, the substrate G is in a state before being removed from the transport arm 40. The rise of the lift pins 8a, 8b is temporarily stopped. Then, as shown in Fig. 6(c), the lift pins 8a and 8b are again raised to separate the substrate G from the transport arm 40. Accordingly, the substrate can be suppressed. The vibration of G causes the substrate G to be safely transferred from the carrier 4 to the lift pins 8a, 8b. Further, as shown in Fig. 6(c), the lift pins 8a, 8b' are again opened to make the substrate G self-carrier 4 When leaving, for example, when the center portion is adsorbed by the carrier 4 and vibration occurs on the substrate G, the lift pins 8a and 8b are lowered as shown in Fig. 6(d) to -18 to 200818385. Then, as shown in Fig. 6 (e), the state under which the substrate G is bent into a convex shape and is in contact with the carrier 4 again is more preferably followed. When the substrate G is in contact with the carrier 4, the lowering of the lift pins 8a and 8b is stopped. Then, as shown in Fig. 6(f), the lift pins 8a and 8b are raised again to move the substrate G. The arm 40 is separated. Accordingly, the vibration of the substrate G can be more reliably suppressed, and the substrate G can be safely transferred from the carrier 4 by the lift pins 8a, 8b. Next, the difference between the protruding heights of the lift pin 8a and the lift pin 8b is adjusted. And the load applied to the substrate G of each of the lift pins 8a, 8b when the support substrate G is measured. The size (vertical X horizontal) of the substrate G is 1 800 mm X 1 500 mm, acting on each of the lift pins 8a, 8b The measurement of the load of the substrate G is performed by the load detector 50 provided in the load detecting portion at the end of each of the lift pins 8a and 8b as shown in Fig. 7. The result is shown in Fig. 8. Further, in Fig. 8, the vertical axis is (the measurement 取得 obtained by each load sensor 50), and the horizontal axis is (the height of the lift pin 8b - the height of the lift pin 8 a). As shown, when the lift pins 8a are arranged slightly higher than the lift pins 8b, although they are sensed by the respective loads The measurement obtained by 50 has a large degree of deviation, but as the difference between the heights of the lift pin 8a and the lift pin 8b becomes larger, the degree of deviation of the measurement enthalpy obtained by each load sensor 50 becomes smaller. The lift pin 8a is disposed higher than the lift pin 8b by a specific amount. When, for example, 20 mm, the lift pin is disposed at a height equal to the lift pin 8b, or the lift pin 8a is disposed lower than the lift pin 8b. At this time, the degree of deviation of the measurement enthalpy obtained by each load cell 50 becomes smaller -19-200818385. That is, as in the present embodiment, it is confirmed that the lift pin 8a is arranged to be higher than the lift pin. When 8b is higher than a certain amount, it is possible to balance the load of the substrate G to the respective lift pins 8a, 8b. Therefore, according to the present embodiment, deformation of the substrate G can be suppressed, and the substrate G can be stabilized and supported. The preferred embodiments of the present invention have been described above, but the present invention is not limited to the above embodiments, and various modifications can be made. In the above embodiment, a plurality of lift pins having a central portion of the support substrate are provided, for example, but one lift pin may be used. Further, in the above-described embodiment, the independent driving portion is disposed at a specific amount higher than the lifting pin of the center portion of the lifting pin supporting the substrate at the peripheral edge portion of the support substrate. However, the present invention is not limited thereto, and the lifting pin may be changed again. The length of each of the lift pins is driven by the same drive unit, and the length of each lift pin is changed again, and a separate drive unit can also be used. Further, in the above-described embodiment, an example of the RIE type capacitive coupling type parallel plate plasma etching apparatus applied to apply high frequency power to the lower electrode is described. However, the present invention is not limited thereto, and ashing, Other plasma processing apparatuses such as CVD film formation may be applied to all of the substrate processing apparatuses other than the plasma apparatus which is placed on the mounting table and processed. Further, in the above embodiment, an example of a glass substrate suitable for FPD is described. However, it is also applicable to all flexible substrates other than the glass substrate for FPD. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view of a side surface of a plasma processing apparatus including an embodiment of a substrate processing apparatus according to the present invention, -20-200818385. Figure 2 is a schematic cross-sectional view of the plane direction of the plasma uranium engraving device. Fig. 3 is a schematic diagram of a substrate mounting mechanism. Fig. 4 is a view for explaining a state in which a substrate is supported by a lift pin belonging to a constituent element of a substrate mounting mechanism. Fig. 5 is a view for explaining a state in which a substrate from a carrying arm is received by a lift pin. Fig. 6 is a view for explaining a state in which a substrate from a carrier is received by a lift pin. Fig. 7 is a view for explaining a measuring method of the load applied to the substrate of the lift pin. Fig. 8 is a view showing the measurement results obtained by the measurement method shown in Fig. 7. Fig. 9 is a schematic diagram of a conventional substrate mounting mechanism. [Description of main component symbols] 1 : Plasma etching device (substrate processing device: electric prize processing device) 2 : Chamber (processing container) 4 : Carrier (mounting table) 8a : Lifting pin (1st lifting pin) 8b : lift pin (second lift pin) 9a, 9b : drive unit (drive mechanism) 1 5 : process gas supply pipe 1 8 : process gas supply source - 21 - 200818385 1 9 : exhaust pipe 20 : exhaust device 2 5 : High-frequency power supply 3 1 : Controller 3 2 : User interface 3 3 : Memory unit 40 : Transport arm (transport member) 50 : Load sensor (load detection unit) G : Glass substrate (substrate to be processed)
-22--twenty two-