JP6369054B2 - Substrate placing apparatus and substrate processing apparatus - Google Patents

Substrate placing apparatus and substrate processing apparatus Download PDF

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JP6369054B2
JP6369054B2 JP2014040680A JP2014040680A JP6369054B2 JP 6369054 B2 JP6369054 B2 JP 6369054B2 JP 2014040680 A JP2014040680 A JP 2014040680A JP 2014040680 A JP2014040680 A JP 2014040680A JP 6369054 B2 JP6369054 B2 JP 6369054B2
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substrate
support
support pin
mounting
elastic member
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JP2015167159A (en
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伊藤　毅
毅 伊藤
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

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Description

本発明は、基板の処理を実行するために、載置台上に基板を載置する技術に関する。   The present invention relates to a technique for mounting a substrate on a mounting table in order to perform substrate processing.

液晶表示装置（ＬＣＤ：Liquid Crystal Display）などのＦＰＤ（Flat Panel Display）に使用される例えば薄膜トランジスター（ＴＦＴ：Thin Film Transistor）は、ガラス基板などの基板上に、ゲート電極やゲート絶縁膜、半導体層などをパターニングしながら順次積層していくことにより形成される。   For example, a thin film transistor (TFT) used in a flat panel display (FPD) such as a liquid crystal display (LCD) is a gate electrode, a gate insulating film, a semiconductor on a substrate such as a glass substrate. It is formed by sequentially laminating layers and the like while patterning.

こうしたＴＦＴの製造工程においては、処理容器内に配置された基板に対し、処理ガスである成膜ガスやエッチングガスを供給し、電極となる金属膜や絶縁膜、半導体層を成膜する処理や、成膜された膜をエッチングしてパターニングする処理などを実行するための基板処理装置が利用される。   In such a TFT manufacturing process, a film-forming gas or an etching gas, which is a processing gas, is supplied to a substrate disposed in a processing container to form a metal film, an insulating film, or a semiconductor layer as an electrode. A substrate processing apparatus is used for performing a process of etching and patterning a formed film.

例えば、基板を一枚ずつ処理する枚葉式の基板処理装置に基板を配置する手法を説明すると、処理対象の基板は、外部の搬送機構によって処理容器内に搬入され、処理容器内に配置された載置台の上方位置にまで搬送される。この載置台には、基板の載置面から突没自在に構成された複数の支持ピンが設けられており、これらの支持ピンを載置面の上方側に突出させる。しかる後、搬送機構から支持ピン上に基板を受け渡し、搬送機構を退避させた後、支持ピンを載置面の下方側まで降下させることによって載置台上に基板が載置される。
これら載置台や支持ピン、支持ピンの昇降機構は、上記基板処理装置における基板載置装置を構成している。 For example, a method of placing a substrate in a single wafer processing apparatus that processes substrates one by one will be described. A substrate to be processed is carried into a processing container by an external transport mechanism and placed in the processing container. It is conveyed to a position above the mounting table. The mounting table is provided with a plurality of support pins configured to protrude and retract from the mounting surface of the substrate, and these supporting pins protrude above the mounting surface. Thereafter, the substrate is delivered from the transport mechanism onto the support pins, and after the transport mechanism has been retracted, the support pins are lowered to the lower side of the mounting surface to place the substrate on the mounting table.
The mounting table, the support pins, and the lifting mechanism of the support pins constitute the substrate mounting device in the substrate processing apparatus.

上述の基板処理装置にて処理されるＦＰＤ用のガラス基板は、年々、大型化が進んでおり、一辺が数メートル以上にもなる。一方、その厚さ寸法は１ミリメートルよりも薄くなっており、０．５ミリメートル以下の基板の処理も必要になってきている。
このように、大型化と薄型化とが同時に進行することにより、基板は、重量が増加すると共に破損しやすくなってきている。一方、基板の重量化に伴って、載置台への受け渡しの際に基板を一時的に支持する支持ピンから、基板に対してより大きな力が加わることとなり、基板内に発生する応力により破損などが生じる原因の一つとなる。 The glass substrate for FPD processed with the above-mentioned substrate processing apparatus is increasing in size year by year, and one side becomes several meters or more. On the other hand, the thickness dimension is thinner than 1 millimeter, and it is necessary to process a substrate of 0.5 millimeter or less.
As described above, the increase in the size and the reduction in the thickness simultaneously cause the substrate to increase in weight and to be easily damaged. On the other hand, as the weight of the substrate increases, a larger force is applied to the substrate from the support pins that temporarily support the substrate during delivery to the mounting table, and damage due to stress generated in the substrate. This is one of the causes.

これら支持ピンから基板に働く力の影響を緩和するためには、支持ピンの設置数を増やすことが考えられるが、支持ピンの設置数の増加は、基板載置装置のコストを上昇させる要因となってしまう。   In order to mitigate the influence of the force acting on the substrate from these support pins, it is conceivable to increase the number of support pins installed, but the increase in the number of support pins installed is a factor that increases the cost of the substrate mounting device. turn into.

ここで特許文献１には、レジスト膜が塗布された基板（半導体ウエハ）を加熱するベーキング装置における基板の搬入出の際の異音の発生や位置ずれを抑えるため、セラミック製であった基板支持用の押上げピンを、基板よりも硬度の低いポリイミド樹脂製とした例が記載されている。しかしながら、ＦＰＤ用の基板載置装置において、ポリイミド樹脂は従来、用いられている材料の一つであり、ＦＰＤ用のガラス基板内に生じる応力を低減するという課題を解決するには不十分である。   Here, in Patent Document 1, a substrate support made of ceramic is used in order to suppress the occurrence of abnormal noise and misalignment during loading / unloading of a substrate in a baking apparatus that heats a substrate (semiconductor wafer) coated with a resist film. An example in which the push-up pins for use are made of polyimide resin having a hardness lower than that of the substrate is described. However, in an FPD substrate mounting apparatus, polyimide resin is one of the materials conventionally used, and is insufficient to solve the problem of reducing the stress generated in the glass substrate for FPD. .

また特許文献２には、レチクルなどのフォトマスク用のガラス基板に形成された露光後のレジスト膜を現像する現像処理装置において、基板の周縁部を下面側から支持する支持ピンと基板との接触面積を小さくするために、当該支持ピンの上端部を合成ゴム製とした技術が記載されている。しかしながらフォトマスク用のガラス基板は、高々、１０〜２０センチメートル程度の大きさしかない一方、その厚さは数ミリメートルにもなり、ガラス基板が支持ピンから受ける力の影響を受けて破損する恐れがあるといった問題は存在しない。   Patent Document 2 discloses a contact area between a substrate and a support pin that supports a peripheral portion of a substrate from the lower surface side in a development processing apparatus that develops a resist film after exposure formed on a glass substrate for a photomask such as a reticle. In order to reduce the size, a technique is described in which the upper end portion of the support pin is made of synthetic rubber. However, the glass substrate for photomask is only about 10 to 20 centimeters in size, but its thickness is several millimeters, and the glass substrate may be damaged by the influence of the force received from the support pins. There is no such problem.

特開平４−７３６号公報：請求項１、２ページ左上欄１〜７行目、同ページ右下欄７〜９行目Japanese Patent Application Laid-Open No. 4-736: Claims 1, 2 upper left column, lines 1-7, lower right column, lines 7-9 特開２０１０−２７８０９４号公報：請求項２、段落００１１の１〜３行目、００２２の２〜３行目、００３５の５〜６行目、図８Japanese Patent Application Laid-Open No. 2010-278094: Claim 2, lines 1 to 3 of paragraph 0011, lines 2 to 3 of 0022, lines 5 to 6 of 0035, FIG.

本発明はこのような事情に鑑みてなされたものであり、その目的は、支持ピンの設置数の増加を抑えつつ、薄くて大型の基板を載置台に載置することが可能な基板載置装置、及びこの基板載置装置を備えた基板処理装置を提供することにある。   The present invention has been made in view of such circumstances, and an object of the present invention is to provide a substrate mounting capable of mounting a thin and large substrate on a mounting table while suppressing an increase in the number of support pins. An object of the present invention is to provide an apparatus and a substrate processing apparatus provided with the substrate mounting apparatus.

第１の発明に係る基板載置装置は、０．５ミリメートル以下の厚さ寸法を有する基板が載置される載置面を備える載置台と、
前記載置台を上下方向に貫通するように設けられ、基板を下面側から支持する複数の支持ピンと、
前記複数の支持ピンを、前記載置面の上方側にて基板を支持する支持位置と、当該載置面の下方側の退避位置との間で昇降させる昇降機構と、を備え、
前記複数の支持ピンには、先端部に、基板を下面側から支持する際に、当該基板からの荷重のみを受けて点接触または線分接触の状態から弾性変形して基板との接触面積が広がる弾性部材が設けられていることと、
前記弾性部材が設けられた複数の前記支持ピンを用い、周縁部側よりも中央部側の方が下方側へ撓んだ状態で基板を支持するように、前記基板の周縁部側を支持する支持ピンの先端部に設けられた弾性部材の硬度よりも、当該基板の中央部側を支持する支持ピンの先端部に設けられた弾性部材の硬度の方が低いことと、を特徴とする。
また、第２の発明に係る基板載置装置は、０．５ミリメートル以下の厚さ寸法を有する基板が載置される載置面を備える載置台と、
前記載置台を上下方向に貫通するように設けられ、基板を下面側から支持する複数の支持ピンと、
前記複数の支持ピンを、前記載置面の上方側にて基板を支持する支持位置と、当該載置面の下方側の退避位置との間で昇降させる昇降機構と、を備え、
前記複数の支持ピンには、先端部に、基板を下面側から支持する際に、当該基板からの荷重のみを受けて点接触または線分接触の状態から弾性変形して基板との接触面積が広がる弾性部材が設けられていることと、
周縁部側よりも中央部側の方が下方側へ撓んだ状態で基板を支持するように、前記支持位置が、前記基板の周縁部側を支持する支持ピンの先端部の高さ位置よりも、当該基板の中央部側を支持する支持ピンの先端部の高さ位置の方が低く設定され、前記弾性部材は、前記基板の周縁部側を支持する支持ピン、及び当該基板の中央部側を支持する支持ピンに設けられていることと、
前記基板の周縁部側を支持する支持ピンの先端部に設けられた弾性部材の硬度よりも、当該基板の中央部側を支持する支持ピンの先端部に設けられた弾性部材の硬度の方が高いことと、を特徴とする。 A substrate mounting apparatus according to a first invention includes a mounting table including a mounting surface on which a substrate having a thickness dimension of 0.5 mm or less is mounted;
A plurality of support pins provided so as to penetrate the mounting table in the vertical direction, and supporting the substrate from the lower surface side;
An elevating mechanism that raises and lowers the plurality of support pins between a support position for supporting the substrate on the upper side of the placement surface and a retreat position on the lower side of the placement surface;
The plurality of supporting pins, the tip contact area in supporting substrate from the lower surface side, the substrate is elastically deformed from the state of contact or line contact received only by point loads from the substrate Is provided with an elastic member that spreads ,
Using the plurality of support pins provided with the elastic member, the peripheral edge side of the substrate is supported so that the substrate is supported in a state where the central side is bent downward than the peripheral edge side. It is characterized in that the hardness of the elastic member provided at the front end portion of the support pin that supports the central portion side of the substrate is lower than the hardness of the elastic member provided at the front end portion of the support pin .
Moreover, the substrate mounting apparatus according to the second invention is a mounting table including a mounting surface on which a substrate having a thickness dimension of 0.5 mm or less is mounted;
A plurality of support pins provided so as to penetrate the mounting table in the vertical direction, and supporting the substrate from the lower surface side;
An elevating mechanism that raises and lowers the plurality of support pins between a support position for supporting the substrate on the upper side of the placement surface and a retreat position on the lower side of the placement surface;
The plurality of support pins have a contact area with the substrate that is elastically deformed from a point contact or line segment contact state by receiving only a load from the substrate when supporting the substrate from the lower surface side at the tip portion. An expanding elastic member is provided;
The support position is higher than the height position of the tip of the support pin that supports the peripheral edge side of the substrate so that the substrate is supported in a state where the central side is bent downward than the peripheral edge side. Also, the height position of the front end portion of the support pin that supports the central portion side of the substrate is set lower, and the elastic member includes the support pin that supports the peripheral portion side of the substrate, and the central portion of the substrate. Being provided on a support pin that supports the side,
The hardness of the elastic member provided at the front end portion of the support pin that supports the central portion side of the substrate is larger than the hardness of the elastic member provided at the front end portion of the support pin that supports the peripheral portion side of the substrate. It is characterized by being high.

前記基板載置装置は以下の特徴を備えていても良い。
（ａ）第１の発明において、前記複数の支持ピンは、各支持ピンに設けられた弾性部材が基板と点接触または線分接触する際の高さ位置が揃っていること。
（ｂ）第２の発明において前記複数の支持ピンのうち最も周縁部側に配置された支持ピンは、基板の外周縁からの距離が３０ミリメートル以内の位置に配置されていること。
（ｃ）前記基板は、全周が４メートル以上の角型基板であること。また、前記基板は、ガラス基板であること。


The substrate mounting apparatus may have the following features.
(A ) In the first invention, the plurality of support pins have the same height position when the elastic member provided on each support pin makes point contact or line segment contact with the substrate.
( B ) In the second invention, among the plurality of support pins, the support pin arranged closest to the peripheral edge side is arranged at a position within 30 millimeters from the outer peripheral edge of the substrate.
( C ) The substrate is a square substrate having a total circumference of 4 meters or more. The substrate is a glass substrate.


また、他の発明に係る基板処理装置は、上述の基板載置装置と、前記基板載置装置の載置台を収容した処理容器と、前記処理容器に基板の処理ガスを供給する処理ガス供給部と、を備えたことを特徴とする。   In addition, a substrate processing apparatus according to another invention includes the above-described substrate mounting apparatus, a processing container that houses a mounting table of the substrate mounting apparatus, and a processing gas supply unit that supplies a processing gas of the substrate to the processing container And.

本発明は、基板を下面側から支持する際に、弾性変形して基板との接触面積が広がる弾性部材を備えた支持ピンを用いて基板を支持するので、０．５ミリメートル以下の薄い基板であっても、支持ピンから基板に加わる力を分散しつつ載置台への載置動作を実行することができる。   In the present invention, when the substrate is supported from the lower surface side, the substrate is supported using a support pin provided with an elastic member that is elastically deformed to increase the contact area with the substrate. Even if it exists, the mounting operation | movement to a mounting base can be performed, disperse | distributing the force added to a board | substrate from a support pin.

本発明の実施の形態に係る基板載置装置を備えた基板処理装置の縦断側面図である。It is a vertical side view of the substrate processing apparatus provided with the substrate mounting apparatus which concerns on embodiment of this invention. 前記基板処理装置の横断平面図である。It is a cross-sectional plan view of the substrate processing apparatus. 前記基板載置装置に設けられている支持ピンの先端の形状を示す拡大図である。It is an enlarged view which shows the shape of the front-end | tip of the support pin provided in the said substrate mounting apparatus. 従来の支持ピンにより基板を支持した状態を示す説明図である。It is explanatory drawing which shows the state which supported the board | substrate with the conventional support pin. 前記従来の支持ピンを用いて載置台に基板を載置した状態を示す説明図である。It is explanatory drawing which shows the state which mounted the board | substrate on the mounting base using the said conventional support pin. 支持ピンの先端部に設けられた硬度の異なる支持部材の配置例を示す説明図である。It is explanatory drawing which shows the example of arrangement | positioning of the supporting member from which the hardness provided in the front-end | tip part of the support pin differs. 前記支持部材の硬度の違いを示す模式図である。It is a schematic diagram which shows the difference in the hardness of the said supporting member. 前記基板載置装置の第１の作用説明図である。It is a 1st operation explanatory view of the substrate mounting device. 前記基板載置装置の第２の作用説明図である。It is a 2nd operation explanatory view of the substrate mounting device. 前記基板載置装置の第３の作用説明図である。It is a 3rd operation explanatory view of the substrate mounting device. 第２の実施形態に係る基板載置装置の支持ピンの配置例を示す説明図である。It is explanatory drawing which shows the example of arrangement | positioning of the support pin of the board | substrate mounting apparatus which concerns on 2nd Embodiment. 第２の実施形態に係る基板載置装置の第１の作用説明図である。It is a 1st operation explanatory view of a substrate mounting device concerning a 2nd embodiment. 第２の実施形態に係る基板載置装置の第２の作用説明図である。It is a 2nd operation explanatory view of the substrate mounting device concerning a 2nd embodiment. 支持ピンに設けられている支持部材の変形例を示す斜視図である。It is a perspective view which shows the modification of the supporting member provided in the support pin.

以下、図１〜図３を参照しながら本発明の実施の形態に係る基板処理装置を備えた基板処理装置の構成例であるプラズマエッチング装置について説明する。
プラズマエッチング装置１は、少なくとも全周が４メートル以上（例えば短辺が２．２メートル、長辺が２．５メートル）であって、０．５ミリメートル以下の厚さ寸法を有するＦＰＤ用のガラス基板（以下、単に「基板」と記す）Ｆに対してエッチング処理を行う容量結合型平行平板プラズマエッチング装置として構成されている。ＦＰＤとしては、液晶ディスプレイ（ＬＣＤ）、エレクトロルミネセンス（Electro Luminescence；ＥＬ）ディスプレイ、プラズマディスプレイパネル（ＰＤＰ）などが例示される。プラズマエッチング装置１は、基板Ｆを収容する処理容器であるチャンバー２を備えている。チャンバー２は、例えば、表面がアルマイト処理（陽極酸化処理）されたアルミニウムからなり、基板Ｆの形状に対応して四角筒形状に形成されている。 Hereinafter, a plasma etching apparatus, which is a configuration example of a substrate processing apparatus including a substrate processing apparatus according to an embodiment of the present invention, will be described with reference to FIGS.
The plasma etching apparatus 1 is an FPD glass having a thickness of at least 4 millimeters (for example, the short side is 2.2 meters and the long side is 2.5 meters) and has a thickness dimension of 0.5 millimeters or less. It is configured as a capacitively coupled parallel plate plasma etching apparatus that performs an etching process on a substrate (hereinafter simply referred to as “substrate”) F. Examples of the FPD include a liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display panel (PDP), and the like. The plasma etching apparatus 1 includes a chamber 2 that is a processing container that accommodates the substrate F. The chamber 2 is made of, for example, aluminum whose surface is anodized (anodized), and is formed in a square tube shape corresponding to the shape of the substrate F.

チャンバー２内の底部には、基板Ｆが載置される載置台３が設けられている。載置台３は、基板Ｆの形状に対応して四角板状または柱状に形成されており、金属等の導電性材料からなる下部電極３１と、下部電極３１の周縁を覆い、絶縁材料からなる環状部材３２と、下部電極３１や環状部材３２とチャンバー２の底面との間に設けられ、下部電極３１とチャンバー２との間を絶縁するための絶縁材料からなる絶縁部材３３とを備えている。   A mounting table 3 on which a substrate F is mounted is provided at the bottom of the chamber 2. The mounting table 3 is formed in a square plate shape or a columnar shape corresponding to the shape of the substrate F, and covers the lower electrode 31 made of a conductive material such as metal and the periphery of the lower electrode 31 and an annular shape made of an insulating material. A member 32 is provided between the lower electrode 31 or the annular member 32 and the bottom surface of the chamber 2, and an insulating member 33 made of an insulating material for insulating the lower electrode 31 and the chamber 2.

下部電極３１は、整合器２３を介して高周波電源２４に接続されている。高周波電源２４からは例えば１３．５６ＭＨｚの高周波電力が載置台３に印加される。さらに載置台３には、載置された基板Ｆを吸着するための静電チャックや、基板Ｆの裏面にヘリウムガスなどの冷却用の温調ガスを供給するための温調ガス供給ライン（いずれも不図示）が設けられている。   The lower electrode 31 is connected to the high frequency power supply 24 through the matching unit 23. For example, high frequency power of 13.56 MHz is applied to the mounting table 3 from the high frequency power supply 24. Further, the mounting table 3 is provided with an electrostatic chuck for adsorbing the mounted substrate F, and a temperature-controlled gas supply line for supplying a temperature-controlled gas for cooling such as helium gas to the back surface of the substrate F (sometimes (Not shown) is also provided.

前記載置台３（下部電極３１）と対向するチャンバー２の上部には、チャンバー２内に処理ガスであるエッチングガスを供給すると共に、平行平板の上部電極として機能するシャワーヘッド１１が設けられている。シャワーヘッド１１は、内部に処理ガスを拡散させるガス拡散空間１２が形成されているとともに、載置台３との対向面には、処理ガスを吐出する多数の吐出孔１３が形成されている。このシャワーヘッド１１はチャンバー２を介して接地されている。   An upper portion of the chamber 2 facing the mounting table 3 (lower electrode 31) is provided with a shower head 11 that supplies an etching gas as a processing gas into the chamber 2 and functions as an upper electrode of a parallel plate. . In the shower head 11, a gas diffusion space 12 for diffusing a processing gas is formed therein, and a plurality of discharge holes 13 for discharging the processing gas are formed on a surface facing the mounting table 3. The shower head 11 is grounded via the chamber 2.

シャワーヘッド１１の上面には処理ガス供給管１４が接続されており、この処理ガス供給管１４の基端部には処理ガス供給部１５が設けられている。処理ガス供給部１５は、不図示の処理ガス供給源やマスフローコントローラを備え、シャワーヘッド１１へ向けてエッチングのための処理ガスを所定量で供給することができる。エッチングを行う処理ガス（エッチングガス）の例としては、ハロゲン系のガスやＯ２ガス、Ａｒガスなど、通常この分野で用いられるガスを用いることができる。 A processing gas supply pipe 14 is connected to the upper surface of the shower head 11, and a processing gas supply section 15 is provided at the base end of the processing gas supply pipe 14. The processing gas supply unit 15 includes a processing gas supply source (not shown) and a mass flow controller, and can supply a predetermined amount of processing gas for etching toward the shower head 11. As an example of a processing gas (etching gas) for performing etching, a gas usually used in this field such as a halogen-based gas, O 2 gas, or Ar gas can be used.

チャンバー２の底壁には排気管１６が接続されており、この排気管１６は排気装置１７に繋がっている。排気装置１７はターボ分子ポンプなどの真空ポンプを備え、これによりチャンバー２内が所定圧力の真空雰囲気となるまで減圧することができる。
またチャンバー２の側壁には、基板Ｆを搬入出するための搬入出口２１が形成されているとともに、この搬入出口２１を開閉するゲートバルブ２２が設けられている。 An exhaust pipe 16 is connected to the bottom wall of the chamber 2, and the exhaust pipe 16 is connected to an exhaust device 17. The exhaust device 17 includes a vacuum pump such as a turbo molecular pump, and the pressure can be reduced until the inside of the chamber 2 becomes a vacuum atmosphere of a predetermined pressure.
A loading / unloading port 21 for loading / unloading the substrate F is formed on the side wall of the chamber 2, and a gate valve 22 for opening / closing the loading / unloading port 21 is provided.

以上に説明した構成を備えるプラズマエッチング装置１において、載置台３には、外部から搬送されてきた基板Ｆを受け取り、載置台３の上面に設けられている載置面へと基板Ｆを受け渡すための支持ピン４が設けられている。なお、図１以外の図では、下部電極３１、環状部材３２、絶縁部材３３を一体の載置台３として表示してある。
以下、図２に示した平面図において、搬入出口２１の設けられている方向を手前側、載置台３を挟んで搬入出口２１と反対側の方向を奥手側として説明する。また、図２の載置台３には基板Ｆが載置される載置領域（載置面）３０を破線で示してある。基板Ｆは、長辺側を搬入出口２１に対向させた状態で載置領域３０に載置される。 In the plasma etching apparatus 1 having the above-described configuration, the mounting table 3 receives the substrate F transferred from the outside, and delivers the substrate F to the mounting surface provided on the upper surface of the mounting table 3. Support pins 4 are provided. In the drawings other than FIG. 1, the lower electrode 31, the annular member 32, and the insulating member 33 are shown as an integral mounting table 3.
Hereinafter, in the plan view shown in FIG. 2, the direction in which the loading / unloading port 21 is provided is described as the front side, and the direction opposite to the loading / unloading port 21 with the mounting table 3 interposed therebetween is described as the back side. Further, on the mounting table 3 in FIG. 2, a mounting area (mounting surface) 30 on which the substrate F is mounted is indicated by a broken line. The substrate F is placed on the placement region 30 with its long side facing the loading / unloading port 21.

図１、図２に示すように下部電極３１及びチャンバー２の底板には、これらの部材３１、２を上下方向に貫通する複数の貫通孔３５が設けられ、各貫通孔３５に支持ピン４が挿入されている。
図２を用いて支持ピン４（貫通孔３５）の配置例を説明すると、本例の載置台３においては、搬入出口２１に対向する基板Ｆの一辺（長辺である）から、他方の一辺へかけてこれら２辺の中点を結ぶ直線ａ-ａ’に沿って、６本の支持ピン４がほぼ等間隔で配置されている（図２中、「１〜６」の番号を振ってある）。 As shown in FIGS. 1 and 2, the bottom electrode 31 and the bottom plate of the chamber 2 are provided with a plurality of through holes 35 penetrating these members 31, 2 in the vertical direction, and a support pin 4 is provided in each through hole 35. Has been inserted.
An arrangement example of the support pins 4 (through holes 35) will be described with reference to FIG. 2. In the mounting table 3 of this example, one side (long side) of the substrate F facing the loading / unloading port 21 to the other side. 6 support pins 4 are arranged at almost equal intervals along a straight line aa ′ connecting the midpoints of these two sides (numbered “1-6” in FIG. 2). is there).

上記６本の支持ピン４のうち、２番、及び５番の支持ピン４を交点として、左手の基板Ｆの一辺（短辺である）から、他方の一辺へかけて５本の支持ピン４がほぼ等間隔で配置されている（図２中「７−８−２−９−１０」及び「１１−１２−５−１３−１４」の番号を振ってある）。さらに１番、及び６番の支持ピン４の左右両脇には、「８−１２」の支持ピン４と前後方向に並ぶ位置、及び「９−１３」の支持ピン４と前後方向に並ぶ位置に各々支持ピン４が設けられている（図２中「１５、１７」及び「１６、１８」の番号を振ってある）。
従って、本例のプラズマエッチング装置１においては、合計１８本の支持ピン４を用いて基板Ｆを支持する構成となっている。なお図示の便宜上、図１に示した支持ピン４は、図２に示した支持ピン４の配置状態に対応した配置とはなっていない。 Among the six support pins 4, the five support pins 4 extending from one side (short side) of the left hand substrate F to the other side with the second and fifth support pins 4 as intersections. Are arranged at substantially equal intervals (numbered “7-8-2-9-10” and “11-12-5-13-14” in FIG. 2). Further, on the left and right sides of the first and sixth support pins 4, a position aligned with the support pin 4 of “8-12” and a position aligned with the support pin 4 of “9-13” in the front-rear direction. Each is provided with a support pin 4 (numbered “15, 17” and “16, 18” in FIG. 2).
Accordingly, the plasma etching apparatus 1 of this example is configured to support the substrate F using a total of 18 support pins 4. For convenience of illustration, the support pins 4 shown in FIG. 1 are not arranged corresponding to the arrangement state of the support pins 4 shown in FIG.

図１、図３に示すように、各支持ピン４は、載置台３及びチャンバー２の底面を上下方向に貫通する昇降棒４１の上端側の先端部に、基板Ｆの下面と接触して当該基板Ｆを支持する支持部材４２を設けた構造となっている。
各支持ピン４は、図示しない位置決め用ブッシュによって径方向に位置決めされた状態で貫通孔３５に挿入されている。 As shown in FIGS. 1 and 3, each support pin 4 comes into contact with the lower surface of the substrate F at the tip of the upper end side of the lifting / lowering rod 41 penetrating the mounting table 3 and the bottom surface of the chamber 2 in the vertical direction. The support member 42 that supports the substrate F is provided.
Each support pin 4 is inserted into the through-hole 35 in a state of being positioned in the radial direction by a positioning bush (not shown).

図１に示すように、各支持ピン４の下部は、チャンバー２の下面側に突出し、その下端部は、例えば共通の昇降板４５に接続されている。昇降板４５は、例えばチャンバー２の下面に配置されたステッピングモーターなどの駆動部４７によって上下方向に移動するロッド４６に接続され、このロッド４６の上下運動に伴って各支持ピン４を載置台３の載置領域３０から突没させることができる。   As shown in FIG. 1, the lower portion of each support pin 4 protrudes to the lower surface side of the chamber 2, and the lower end portion thereof is connected to, for example, a common lifting plate 45. The elevating plate 45 is connected to a rod 46 that moves in the vertical direction by a driving unit 47 such as a stepping motor disposed on the lower surface of the chamber 2. It is possible to project and retract from the mounting area 30.

チャンバー２の下面側に突出する支持ピン４の下部にはそれぞれ、フランジ部４３が形成されており、各フランジ部４３には、支持ピン４を囲むように設けられた伸縮自在なベローズ４４の下端部が接続されている。各ベローズ４４の上端部は、チャンバー２の底面に接続され、支持ピン４の昇降に追従して伸縮するとともに、各貫通孔３５とベローズ４４との隙間を塞いでチャンバー２内を気密に保っている。
プラズマエッチング装置１に設けられている載置台３、支持ピン４及びその昇降機構（昇降板４５、ロッド４６、駆動部４７）は、本実施の形態の基板載置装置に相当する。 Flange portions 43 are formed in the lower portions of the support pins 4 protruding to the lower surface side of the chamber 2, and the lower ends of the telescopic bellows 44 provided so as to surround the support pins 4 are formed in the flange portions 43. Are connected. The upper end portion of each bellows 44 is connected to the bottom surface of the chamber 2, expands and contracts following the raising and lowering of the support pin 4, and closes the gap between each through hole 35 and the bellows 44 to keep the inside of the chamber 2 airtight. Yes.
The mounting table 3, the support pins 4, and the lifting mechanism (lifting plate 45, rod 46, drive unit 47) provided in the plasma etching apparatus 1 correspond to the substrate mounting apparatus of the present embodiment.

またプラズマエッチング装置１は、図１に示すようにその全体の動作を統括制御する制御部５と接続されている。制御部５は不図示のＣＰＵと記憶部とを備えたコンピュータからなり、記憶部にはプラズマエッチング装置１の動作などについてのステップ（命令）群が組まれたプログラムが記録されている。このプログラムは、例えばハードディスク、コンパクトディスク、マグネットオプティカルディスク、メモリーカード等の記憶媒体に格納され、そこからコンピュータにインストールされる。   Further, the plasma etching apparatus 1 is connected to a control unit 5 that controls the overall operation of the plasma etching apparatus 1 as shown in FIG. The control unit 5 includes a computer having a CPU and a storage unit (not shown), and a program in which a group of steps (commands) about the operation of the plasma etching apparatus 1 is recorded in the storage unit. This program is stored in a storage medium such as a hard disk, a compact disk, a magnetic optical disk, or a memory card, and installed in the computer therefrom.

ここで以上に説明した構成を備えるプラズマエッチング装置１の動作について簡単に説明しておく。例えばプラズマエッチング装置１が接続されている真空搬送室内を、外部の搬送機構によって処理対象の基板Ｆが搬送されてくる。プラズマエッチング装置１は、搬入出口２１のゲートバルブ２２を開き、搬送機構のアームをチャンバー２内に進入させ、これにより基板Ｆが載置台３の上面の載置領域３０の上方位置に搬送される。   Here, the operation of the plasma etching apparatus 1 having the configuration described above will be briefly described. For example, the substrate F to be processed is transferred by an external transfer mechanism in a vacuum transfer chamber to which the plasma etching apparatus 1 is connected. In the plasma etching apparatus 1, the gate valve 22 at the loading / unloading port 21 is opened, and the arm of the transport mechanism enters the chamber 2, whereby the substrate F is transported to a position above the mounting region 30 on the top surface of the mounting table 3. .

次いで、各支持ピン４の上端をアームによる基板Ｆの保持位置よりも高い支持位置まで上昇させ、アームから支持ピン４に基板Ｆを受け渡す。なお、支持ピン４の配置位置は、アームと干渉しない位置に設定されている。
支持ピン４に基板Ｆが受け渡されたら、アームをチャンバー２から退出させ、ゲートバルブ２２によって搬入出口２１を閉じる。また、支持ピン４を下降させて載置台３の上面の下方側の退避位置まで退避させることにより、載置領域３０に基板Ｆが載置され、不図示の静電チャックを作動させることにより載置台３に基板Ｆが吸着保持される。 Next, the upper end of each support pin 4 is raised to a support position higher than the holding position of the substrate F by the arm, and the substrate F is transferred from the arm to the support pin 4. The arrangement position of the support pins 4 is set to a position that does not interfere with the arm.
When the substrate F is delivered to the support pins 4, the arm is retracted from the chamber 2 and the loading / unloading port 21 is closed by the gate valve 22. Further, by lowering the support pin 4 and retracting it to the retracted position below the upper surface of the mounting table 3, the substrate F is mounted on the mounting area 30 and is mounted by operating an electrostatic chuck (not shown). The substrate F is sucked and held on the table 3.

次いで、排気装置１７によってチャンバー２内を所定の圧力まで真空排気し、処理ガス供給部１５から処理ガス（本例ではエッチングガス）を所定の流量で供給する。処理ガスは、処理ガス供給管１４、シャワーヘッド１１を介してチャンバー２内に供給される。
そして、高周波電源２４から載置台３に高周波電力を印加し、下部電極３１とシャワーヘッド１１（上部電極）との間に高周波電界を生じさせてチャンバー２内の処理ガスをプラズマ化させる。この結果、プラズマ化した処理ガス中の活性種の作用により基板Ｆに対するエッチング処理が実行される。 Next, the inside of the chamber 2 is evacuated to a predetermined pressure by the exhaust device 17, and a processing gas (etching gas in this example) is supplied from the processing gas supply unit 15 at a predetermined flow rate. The processing gas is supplied into the chamber 2 through the processing gas supply pipe 14 and the shower head 11.
Then, high-frequency power is applied from the high-frequency power source 24 to the mounting table 3 to generate a high-frequency electric field between the lower electrode 31 and the shower head 11 (upper electrode) so that the processing gas in the chamber 2 is turned into plasma. As a result, the etching process for the substrate F is performed by the action of the active species in the plasma-ized processing gas.

所定時間だけ基板Ｆのエッチング処理を実行したら、高周波電源２４からの高周波電力の印加を停止するとともに、処理ガスの供給、チャンバー２内の真空排気を停止し、載置台３への基板Ｆの吸着固定を解除する。次に、支持ピン４を基板Ｆの受け渡しが行われる支持位置まで上昇させ、ゲートバルブ２２開いてアームを基板Ｆの下方側に進入させる。しかる後、支持ピン４を降下させることにより、支持ピン４からアームに基板Ｆが受け渡され、外部へと搬出される。   When the etching process of the substrate F is executed for a predetermined time, the application of the high frequency power from the high frequency power supply 24 is stopped, the supply of the processing gas and the evacuation of the chamber 2 are stopped, and the substrate F is adsorbed to the mounting table 3 Unpin. Next, the support pins 4 are raised to a support position where the substrate F is transferred, the gate valve 22 is opened, and the arm enters the lower side of the substrate F. Thereafter, by lowering the support pins 4, the substrate F is transferred from the support pins 4 to the arm and carried out to the outside.

以上に説明した基板Ｆの処理において、アームと載置台３との間で基板Ｆを支持、搬送する支持ピン４は、昇降棒４１の上端に設けられた支持部材４２にて基板Ｆを支持する。このため背景技術にて説明したように、基板Ｆの大型化による重量の増加に伴って基板Ｆには各支持ピン４から大きな力が加わる。また、０．５ミリメートル以下といった薄い基板Ｆの破損を避けつつ、安定して基板を支持するためには、支持ピン４から基板Ｆに力が加わることにより基板Ｆ内に発生する応力を低減する必要がある。   In the processing of the substrate F described above, the support pins 4 that support and transport the substrate F between the arm and the mounting table 3 support the substrate F by the support member 42 provided at the upper end of the elevating bar 41. . Therefore, as described in the background art, a large force is applied to the substrate F from each support pin 4 as the weight of the substrate F increases due to an increase in size. Further, in order to stably support the substrate while avoiding damage to the thin substrate F of 0.5 mm or less, stress generated in the substrate F is reduced by applying force from the support pins 4 to the substrate F. There is a need.

さらに図４に模式的に示すように、間隔を開けて配置された支持ピン４によって大型で薄い基板Ｆを支持すると、基板Ｆにおける支持ピン４と接していない領域が下方側へ撓んで複数の凸面が形成される。このように複数の凸面が形成された状態のまま載置台３上に基板Ｆを載置すると、支持ピン４に支持されている領域の周囲に位置する凸面の下端が先に載置台３上に載置されてしまう。   Further, as schematically shown in FIG. 4, when the large thin substrate F is supported by the support pins 4 arranged at an interval, a region of the substrate F that is not in contact with the support pins 4 is bent downward to form a plurality of A convex surface is formed. Thus, when the board | substrate F is mounted on the mounting base 3 in the state in which the some convex surface was formed, the lower end of the convex surface located in the circumference | surroundings of the area | region currently supported by the support pin 4 will be on the mounting base 3 previously. It will be placed.

支持ピン４に支持されている領域の周囲が先に載置台３上に載置されてしまうと、基板Ｆと載置領域３０との間に働く摩擦の影響などにより、基板Ｆが平坦な形状に変形することができず、基板Ｆと載置台３との間に隙間ｇが形成されてしまうことがある（図５）。
こうした隙間ｇが形成されると、例えば温調ガスを利用した基板Ｆの冷却にむらが生じ、基板Ｆの面内における均一なエッチング処理を阻害する要因となる。 If the periphery of the region supported by the support pins 4 is first placed on the mounting table 3, the substrate F has a flat shape due to the influence of friction acting between the substrate F and the mounting region 30. May not be deformed, and a gap g may be formed between the substrate F and the mounting table 3 (FIG. 5).
When such a gap g is formed, for example, unevenness of cooling of the substrate F using the temperature control gas occurs, which becomes a factor that hinders uniform etching processing within the surface of the substrate F.

本実施の形態に係る支持ピン４は、上述の各課題に対応するための構成を備えている。以下にその具体的内容について説明する。
初めに基板内に生じる応力を低減する手法に関して説明する。例えば従来の支持ピン４は、チャンバー２の下面側に突出する下部側から、基板Ｆの下面と接触してこれを支持する上部側までが一体のポリイミド樹脂によって構成されている。また、撓みや歪み、加工寸法のばらつき（公差）などに伴って各基板Ｆの形状に変化があった場合でも、その変化に対応して（追従して）同じ状態で基板Ｆを支持できるよう、支持ピン４の上部側の先端（上端）は半球状に加工されている。しかしながらポリイミド樹脂は、基板Ｆの重量を支える程度の力を加えても殆ど弾性変形しないため、基板Ｆと支持ピン４とは点接触となり、基板Ｆに集中的に力が加わることになる。 The support pin 4 according to the present embodiment has a configuration for dealing with the above-described problems. The specific contents will be described below.
First, a method for reducing the stress generated in the substrate will be described. For example, the conventional support pin 4 is composed of an integral polyimide resin from the lower side protruding to the lower surface side of the chamber 2 to the upper side that contacts and supports the lower surface of the substrate F. Further, even when there is a change in the shape of each substrate F due to bending, distortion, variation in processing dimensions (tolerance), etc., the substrate F can be supported in the same state in response to (following) the change. The upper end (upper end) of the support pin 4 is processed into a hemispherical shape. However, since the polyimide resin is hardly elastically deformed even if a force that supports the weight of the substrate F is applied, the substrate F and the support pins 4 are in point contact, and the force is applied to the substrate F in a concentrated manner.

そこで本例の支持ピン４は、例えばポリイミド樹脂製の昇降棒４１の上部に、ポリイミド樹脂よりも硬度が小さく、弾性変形可能な弾性部材、例えばフッ素系の合成ゴム製の支持部材４２を設けた構造となっている（図３）。
支持部材４２を構成する合成ゴムの硬度は、基板Ｆの強度や基板Ｆに加わる力、支持ピン４が基板Ｆを支持する位置などによっても異なるが、例えばＪＩＳ Ｋ６２５３（デュロメータタイプＡ）で３０〜９０の範囲の例えば５０〜７０のものが使用される。 Therefore, the support pin 4 of this example is provided with an elastic member having a hardness lower than that of the polyimide resin and capable of elastic deformation, for example, a support member 42 made of a fluorine-based synthetic rubber, on the upper and lower bars 41 made of polyimide resin, for example. It has a structure (FIG. 3).
The hardness of the synthetic rubber constituting the support member 42 varies depending on the strength of the substrate F, the force applied to the substrate F, the position where the support pins 4 support the substrate F, etc., but for example, 30 to 30 in JIS K6253 (durometer type A). A range of 90, for example 50 to 70, is used.

図３に示すように支持部材４２の先端部は、ほぼ半球状に加工されているので、アームから支持ピン４への基板の受け渡し時においては、各支持部材４２は基板Ｆの下面と点接触する。しかる後、さらに支持ピン４を上昇させて基板Ｆの荷重を支持部材４２に加えると、支持部材４２が弾性変形して支持部材４２と基板Ｆとの接触面積が広がる。   As shown in FIG. 3, since the tip of the support member 42 is processed into a substantially hemispherical shape, each support member 42 is in point contact with the lower surface of the substrate F when the substrate is transferred from the arm to the support pins 4. To do. Thereafter, when the support pins 4 are further raised and the load of the substrate F is applied to the support member 42, the support member 42 is elastically deformed and the contact area between the support member 42 and the substrate F is expanded.

この結果、支持部材４２（支持ピン４）から基板Ｆに加わる力を分散して、基板Ｆ内に発生する応力を低減することができる。また、支持部材４２の先端を半球状に加工し、基板Ｆから加わる荷重に応じて支持部材４２を変形させることにより、例えば当該先端を予め平坦な面状に加工しておく場合に比べて、撓みや歪みなどによる基板Ｆの形状の変化に追従して同じ状態で基板Ｆを保持することができる。   As a result, the force applied to the substrate F from the support member 42 (support pin 4) can be dispersed, and the stress generated in the substrate F can be reduced. Further, by processing the tip of the support member 42 into a hemispherical shape and deforming the support member 42 according to the load applied from the substrate F, for example, compared to a case where the tip is processed into a flat surface in advance, for example. The substrate F can be held in the same state following the change in the shape of the substrate F due to bending or distortion.

次に、図５を用いて説明した隙間ｇの形成を抑えつつ、載置台３上に基板Ｆを載置する手法について図６〜図１０を参照しながら説明する。
上記の課題を解決するため、本例の支持ピン４においては、基板Ｆを支持する位置に応じて支持部材４２を構成する合成ゴムの硬度を変化させている。図６は、載置領域３０における支持部材４２（４２ａ〜４２ｃ）の配置位置と合成ゴムの硬度との対応関係を示す説明図であり、図７は、図６に示したハッチ及び符号と合成ゴムの硬度との関係を示す説明図である。 Next, a method for mounting the substrate F on the mounting table 3 while suppressing the formation of the gap g described with reference to FIG. 5 will be described with reference to FIGS.
In order to solve the above problems, in the support pin 4 of this example, the hardness of the synthetic rubber constituting the support member 42 is changed according to the position where the substrate F is supported. FIG. 6 is an explanatory view showing a correspondence relationship between the arrangement position of the support members 42 (42a to 42c) in the placement region 30 and the hardness of the synthetic rubber, and FIG. 7 is a combination of the hatch and the sign shown in FIG. It is explanatory drawing which shows the relationship with the hardness of rubber | gum.

図６に示すように、本例においては、基板Ｆの中央部側を支持し、既述の直線ａ-ａ’に沿って配置された「３−４」の番号を振った支持部材４２ｃについて、硬度が最も低い（柔らかい）合成ゴムを使用している。
次いで、これら中央部の支持部材４２ｃを外側から囲むように環状に配置された「８−２−９−１３−５−１２」の番号を振った支持部材４２ｂ（一点鎖線で結んで示してある）は、中程度の硬度を有する合成ゴムを使用している。 As shown in FIG. 6, in this example, the support member 42 c that supports the central portion side of the substrate F and is assigned the number “3-4” arranged along the straight line aa ′ described above. , Synthetic rubber with the lowest hardness (soft) is used.
Next, the support member 42b numbered "8-2-9-13-5-12" arranged in an annular shape so as to surround the support member 42c at the center from the outside (shown connected by a one-dot chain line). ) Uses a synthetic rubber having a medium hardness.

さらに、これら中央側の支持部材４２ｃ、４２ｂを外側から囲むように環状に配置され、基板Ｆの外周縁近傍位置に配置された「１５−１−１６−１０−１４−１８−６−１７−１１−７」の番号を振った支持部材４２ａ（短い破線で結んで示してある）は、硬度が最も高い（硬い）合成ゴムを使用している。
このように、本例の載置台３には、支持部材４２ａ〜４２ｃの合成ゴムの硬度が、基板Ｆの中央部側から周縁部側へ向けて、順次、高くなるように配置されている。 Further, the central side support members 42c and 42b are annularly arranged so as to surround from the outside, and are arranged in the vicinity of the outer peripheral edge of the substrate F "15-1-16-10-14-18-6-17-". The support member 42a (shown by a short broken line) numbered 11-7 "uses a synthetic rubber having the highest hardness (hard).
Thus, on the mounting table 3 of this example, the synthetic rubbers of the support members 42a to 42c are arranged so that the hardness of the synthetic rubber increases sequentially from the center side to the peripheral side of the substrate F.

上記の構成の支持ピン４を用いて載置台３に基板Ｆを載置する動作について図８〜図１０を参照しながら説明する。これらの図には、直線ａ-ａ’上に配置された「１〜６」の番号を付した支持ピン４を示してある。
本例においては、「１〜６」の番号を付した支持ピン４の支持位置は、支持部材４２ａ〜４２ｃの上端の高さがほぼ同じ高さ位置となるように設定されている。これを分かりやすく示すため、図８には基板Ｆを支持せずに支持ピン４を支持位置まで上昇させたときの状態を示してある。 The operation of mounting the substrate F on the mounting table 3 using the support pins 4 having the above configuration will be described with reference to FIGS. These figures show the support pins 4 numbered “1-6” arranged on the straight line aa ′.
In this example, the support positions of the support pins 4 numbered “1-6” are set such that the upper ends of the support members 42a to 42c are substantially at the same height. For easy understanding, FIG. 8 shows a state when the support pins 4 are raised to the support position without supporting the substrate F.

これらの支持ピン４上に基板Ｆが支持されると、図９に示すように基板Ｆからの荷重を受けて各支持部材４２ａ〜４２ｃが弾性変形し、これら支持部材４２ａ〜４２ｃと基板Ｆとの接触面積が広がって基板Ｆに加わる力が分散される。   When the substrate F is supported on the support pins 4, the support members 42 a to 42 c are elastically deformed by receiving a load from the substrate F as shown in FIG. 9, and the support members 42 a to 42 c and the substrate F The contact area is increased and the force applied to the substrate F is dispersed.

また、支持部材４２ａ〜４２ｃの硬度が、基板Ｆの中央部側ほど低く、周縁部側へ向けて順次、高くなるように支持ピン４を配置することにより、中央部側の支持部材４２ｃの変形量が大きくなる一方、周縁部側へいくほど支持部材４２ｂ、４２ａの変形量は小さくなっていく。   Further, by arranging the support pins 4 so that the hardness of the support members 42a to 42c is lower toward the central portion side of the substrate F and gradually increases toward the peripheral edge side, the deformation of the support member 42c on the central portion side is achieved. On the other hand, the amount of deformation of the support members 42b and 42a decreases as the amount increases toward the periphery.

この結果、図９に示すように、基板Ｆは、周縁部側よりも中央部側の方が下方側へ撓んだ凸形状の状態で載置台３（載置領域３０）の上方側に支持される。
なお、図９に示した基板Ｆを支持している各支持部材４２ａ〜４２ｃの形状は、支持ピン４の配置位置に応じて支持部材４２ａ〜４２ｃの変形量が異なることを説明するために模式的に示したものであり、実際の変形形状を示すものではない。 As a result, as shown in FIG. 9, the substrate F is supported on the upper side of the mounting table 3 (mounting region 30) in a convex shape in which the central side is bent downward rather than the peripheral side. Is done.
Note that the shapes of the support members 42a to 42c supporting the substrate F shown in FIG. 9 are schematically shown in order to explain that the deformation amounts of the support members 42a to 42c differ depending on the arrangement positions of the support pins 4. It is merely shown and does not show the actual deformed shape.

図９に示した状態で支持ピン４に基板Ｆを支持したら、駆動部４７を作動させて全ての支持ピン４を同時に、同じスピードで降下させていく。すると、下方側へ向けて最も突出している基板Ｆの下面側の中央部が、先ず載置台３と接触する。そして、さらに支持ピン４を降下させると、載置台３と接触する基板Ｆの下面が、基板Ｆの中央部側から周縁部側へ向けて次第に広がっていく。   If the board | substrate F is supported by the support pin 4 in the state shown in FIG. 9, the drive part 47 will be operated and all the support pins 4 will be simultaneously dropped at the same speed. Then, the center part on the lower surface side of the substrate F that protrudes most downward is first brought into contact with the mounting table 3. When the support pins 4 are further lowered, the lower surface of the substrate F in contact with the mounting table 3 gradually spreads from the central portion side to the peripheral portion side of the substrate F.

この結果、図４、図５を用いて説明したように、支持ピン４に支持されている位置の周囲の複数の領域が先に載置台３上に載置されてしまうといった状況が発生せず、隙間ｇの形成を避けつつ基板Ｆを載置台上に載置することができる（図１０）。   As a result, as described with reference to FIGS. 4 and 5, a situation in which a plurality of regions around the position supported by the support pin 4 is first placed on the placement table 3 does not occur. The substrate F can be mounted on the mounting table while avoiding the formation of the gap g (FIG. 10).

プラズマエッチング装置１に設けられている、本実施の形態に係る基板載置装置（載置台３、支持ピン４やその昇降機構（昇降板４５、ロッド４６など））によれば以下の効果がある。弾性部材である合成ゴムにより構成され、基板Ｆを下面側から支持する際に、弾性変形して基板Ｆとの接触面積が広がる支持部材４２を備えた支持ピンを用いて基板Ｆを支持するので、０．５ミリメートル以下の薄い基板Ｆであっても、支持ピン４から基板Ｆに加わる力を分散しつつ載置台３への載置動作を実行することができる。   According to the substrate mounting device (mounting table 3, support pin 4 and its lifting mechanism (lifting plate 45, rod 46, etc.)) according to the present embodiment provided in the plasma etching apparatus 1, the following effects are obtained. . Since it is made of synthetic rubber which is an elastic member, and supports the substrate F from the lower surface side, the substrate F is supported by using a support pin provided with a support member 42 which is elastically deformed to increase the contact area with the substrate F. Even with a thin substrate F of 0.5 mm or less, the mounting operation on the mounting table 3 can be executed while the force applied to the substrate F from the support pins 4 is dispersed.

ここで全ての支持ピン４に弾性変形可能な支持部材４２を設けることは必須ではない。図１１には、図２にて説明した例と同様の支持ピン４の配置例において、破損などが発生しやすい基板Ｆの周縁部を支持する支持ピン４にのみ、弾性変形可能な支持部材４２を設けた例を示している。図１１に示す例において、支持部材４２を備えた支持ピン４が配置される位置は、例えば基板Ｆの外周縁から、基板Ｆと支持部材４２との接触面の中心までの距離ｗが３０ミリメートル以内の範囲、好適には２０ミリメートル以内の範囲、さらに好適には１０ミリメートル以内の範囲となる位置に設定される。
なお区別のため、図１１〜図１３の説明においては、支持部材４２を設けていない支持ピン４には「４ａ」の符号を付してある。 Here, it is not essential to provide support members 42 that can be elastically deformed on all the support pins 4. FIG. 11 shows a support member 42 that can be elastically deformed only on the support pin 4 that supports the peripheral portion of the substrate F that is easily damaged in the arrangement example of the support pins 4 similar to the example described in FIG. The example which provided is shown. In the example shown in FIG. 11, the position where the support pin 4 including the support member 42 is disposed is, for example, a distance w from the outer peripheral edge of the substrate F to the center of the contact surface between the substrate F and the support member 42 is 30 millimeters. Within a range, preferably within a range of 20 millimeters, and more preferably within a range of within 10 millimeters.
For the sake of distinction, in the description of FIG. 11 to FIG. 13, the support pin 4 that is not provided with the support member 42 is labeled with “4a”.

また、支持部材４２が設けられていない支持ピン４ａを備える載置台３にて、図５を用いて説明した隙間ｇの形成を抑えつつ載置台３への基板Ｆの載置を行う手法について図１２、図１３を用いて説明する。
既述のように、支持部材４２を設けていない例えばポリイミド樹脂製の支持ピン４ａの上端部は、殆ど弾性変形しないことから、図９を用いて説明したように基板Ｆの重さを利用して周縁部側よりも中央部側の方が下方側へ撓んだ凸形状を形成することは難しい。 In addition, a method for placing the substrate F on the placement table 3 while suppressing the formation of the gap g described with reference to FIG. 5 on the placement table 3 including the support pins 4a on which the support member 42 is not provided. 12 and FIG.
As described above, since the upper end portion of the support pin 4a made of, for example, polyimide resin that is not provided with the support member 42 hardly undergoes elastic deformation, the weight of the substrate F is used as described with reference to FIG. Thus, it is difficult to form a convex shape in which the central side is bent downward than the peripheral side.

そこで、本例の載置台３においては、図１２に示すように、支持ピン４ａ、４を支持位置まで上昇させたとき各支持ピン４ａ、４の先端部が異なる高さ位置に到達する設定となっている。そして、これらの支持ピン４ａ、４にて基板Ｆを支持すると、図１３に示すように、当該基板Ｆの形状が周縁部側よりも中央部側の方が下方側へ撓んだ凸形状となるように、各支持ピン４ａ、４の先端部が到達する高さ位置が予め設定されている。即ち、基板Ｆを載置した際に弾性変形した支持ピン４の上端の高さよりも、支持ピン４ａの上端の高さは低くなっている。この結果、図９、図１０を用いて説明した例と同様に、隙間ｇの形成を抑えつつ、載置台３上に基板Ｆを載置することができる。   Therefore, in the mounting table 3 of the present example, as shown in FIG. 12, when the support pins 4a and 4 are raised to the support position, the tip portions of the support pins 4a and 4 reach different height positions. It has become. And if the board | substrate F is supported by these support pins 4a and 4, as shown in FIG. 13, the shape of the said board | substrate F will be the convex shape which the direction of the center part side bent below rather than the peripheral part side. The height position where the front-end | tip part of each support pin 4a and 4 arrives is preset. That is, the height of the upper end of the support pin 4a is lower than the height of the upper end of the support pin 4 that is elastically deformed when the substrate F is placed. As a result, similarly to the example described with reference to FIGS. 9 and 10, the substrate F can be mounted on the mounting table 3 while suppressing the formation of the gap g.

図１２に示したように、各支持ピン４ａ、４の先端部が、異なる高さ位置に到達するように調節する手法は、異なる長さの支持ピン４ａ、４を図１に示す共通の昇降板４５に接続してもよい。また、例えば同じ長さの支持ピン４ａ、４に、各々昇降機構を設け、待機位置から各支持ピン４ａ、４を上昇させる距離を変化させてもよい。後者の場合には、高さ距離の設定変更だけで、基板Ｆが支持ピン４ａ、４に支持される際の基板Ｆの形状を変更することもできる。   As shown in FIG. 12, the method of adjusting the tips of the support pins 4a and 4 to reach different height positions is the same as the support pins 4a and 4 having different lengths as shown in FIG. It may be connected to the plate 45. Further, for example, an elevating mechanism may be provided for each of the support pins 4a and 4 having the same length, and the distance for raising the support pins 4a and 4 from the standby position may be changed. In the latter case, the shape of the substrate F when the substrate F is supported by the support pins 4a and 4 can be changed only by changing the setting of the height distance.

さらに、図１２、図１３に示した例の如く、支持位置にて各支持ピン４ａ、４の先端部が到達する高さ位置を変化させることにより、周縁部側よりも中央部側の方が下方側へ撓んだ状態となるように基板Ｆを支持する場合においても、全ての支持ピン４に支持部材４２を設けてもよい。このとき、既述のように基板Ｆの周縁部側の方が中央部側よりも破損などが発生しやすいことを考慮し、図６、図７を用いて説明した例とは反対に、周縁部側の支持部材４２の硬度を低く（柔らかく）し、中央部側の支持部材４２の硬度を高くしてもよい。
但し、全ての支持ピン４の硬度が同じになるようにしてもよいことは勿論である。 Further, as in the example shown in FIGS. 12 and 13, by changing the height position at which the tip of each support pin 4a, 4 reaches at the support position, the center side is more than the peripheral side. Even when the substrate F is supported so as to be bent downward, the support members 42 may be provided on all the support pins 4. At this time, considering that the peripheral side of the substrate F is more likely to be damaged than the central side as described above, the peripheral side is opposite to the example described with reference to FIGS. The hardness of the support member 42 on the part side may be lowered (softened) and the hardness of the support member 42 on the center part side may be increased.
However, it goes without saying that all the support pins 4 may have the same hardness.

また、支持部材４２は半球形状のものを用いる場合に限らず、例えば図１４（ａ）の支持ピン４ｂに示すように半円板形状の支持部材４２ｄの頂部にて基板Ｆを支持してもよいし、図１４（ｂ）の支持ピン４ｃに示すように半円筒形状の支持部材４２ｅの側周面の頂部にて基板Ｆを支持してもよい。基板Ｆは、これらの支持部材４２ｄ、４２ｅの側周面の頂部に位置する線分と接触（線分接触）し、さらに基板Ｆの荷重を加えると、支持部材４２ｄ、４２ｅが弾性変形して支持部材４２ｄ、４２ｅと基板Ｆとの接触面積が広がる。
さらに、支持ピン４（支持部材４２）の配置位置は、図６に示した１８本の支持ピン４にて基板Ｆを支持する例に限定されず、支持ピン４の設置数を増減し、また異なる配置位置に配置してもよいことは勿論である。 Further, the support member 42 is not limited to the hemispherical one, and for example, the substrate F is supported on the top of the semicircular disk-shaped support member 42d as shown by the support pin 4b in FIG. Alternatively, the substrate F may be supported on the top of the side peripheral surface of the semi-cylindrical support member 42e as shown by the support pins 4c in FIG. The substrate F comes into contact (line segment contact) with the line segment located on the top of the side peripheral surfaces of these support members 42d and 42e, and when the load of the substrate F is further applied, the support members 42d and 42e are elastically deformed The contact area between the support members 42d and 42e and the substrate F increases.
Furthermore, the arrangement positions of the support pins 4 (support members 42) are not limited to the example in which the substrate F is supported by the 18 support pins 4 shown in FIG. Of course, they may be arranged at different positions.

そして、以上に説明した構成を備える基板載置装置（載置台３、支持ピン４やその昇降機構）を適用可能な基板処理装置は、プラズマエッチング装置１の例に限定されるものではない。基板Ｆ上に形成されたレジスト膜を除去するプラズマアッシング装置や、基板Ｆへの成膜を行うプラズマＣＶＤ（Chemical Vapor Deposition）装置、熱ＣＶＤ装置などにも適用することができる。   And the substrate processing apparatus which can apply the substrate mounting apparatus (the mounting table 3, the support pin 4, and its raising / lowering mechanism) provided with the structure demonstrated above is not limited to the example of the plasma etching apparatus 1. FIG. The present invention can also be applied to a plasma ashing apparatus that removes a resist film formed on the substrate F, a plasma CVD (Chemical Vapor Deposition) apparatus that forms a film on the substrate F, a thermal CVD apparatus, and the like.

Ｆ 基板
１ プラズマエッチング装置
３ 載置台
３０ 載置領域
４、４ａ〜４ｃ
支持ピン
４２、４２ａ〜４２ｃ
支持部材
４５ 昇降板
４７ 駆動部 F substrate 1 plasma etching apparatus 3 mounting table 30 mounting area 4, 4a to 4c
Support pins 42, 42a-42c
Support member 45 Elevating plate 47 Drive unit

Claims (7)

０．５ミリメートル以下の厚さ寸法を有する基板が載置される載置面を備える載置台と、
前記載置台を上下方向に貫通するように設けられ、基板を下面側から支持する複数の支持ピンと、
前記複数の支持ピンを、前記載置面の上方側にて基板を支持する支持位置と、当該載置面の下方側の退避位置との間で昇降させる昇降機構と、を備え、
前記複数の支持ピンには、先端部に、基板を下面側から支持する際に、当該基板からの荷重のみを受けて点接触または線分接触の状態から弾性変形して基板との接触面積が広がる弾性部材が設けられていることと、
前記弾性部材が設けられた複数の前記支持ピンを用い、周縁部側よりも中央部側の方が下方側へ撓んだ状態で基板を支持するように、前記基板の周縁部側を支持する支持ピンの先端部に設けられた弾性部材の硬度よりも、当該基板の中央部側を支持する支持ピンの先端部に設けられた弾性部材の硬度の方が低いことと、を特徴とする基板載置装置。 A mounting table including a mounting surface on which a substrate having a thickness dimension of 0.5 mm or less is mounted;
A plurality of support pins provided so as to penetrate the mounting table in the vertical direction, and supporting the substrate from the lower surface side;
An elevating mechanism that raises and lowers the plurality of support pins between a support position for supporting the substrate on the upper side of the placement surface and a retreat position on the lower side of the placement surface;
The plurality of supporting pins, the tip contact area in supporting substrate from the lower surface side, the substrate is elastically deformed from the state of contact or line contact received only by point loads from the substrate Is provided with an elastic member that spreads ,
Using the plurality of support pins provided with the elastic member, the peripheral edge side of the substrate is supported so that the substrate is supported in a state where the central side is bent downward than the peripheral edge side. A substrate characterized in that the hardness of the elastic member provided at the tip of the support pin that supports the central portion side of the substrate is lower than the hardness of the elastic member provided at the tip of the support pin Placement device. 前記複数の支持ピンは、各支持ピンに設けられた弾性部材が基板と点接触または線分接触する際の高さ位置が揃っていることを特徴とする請求項１に記載の基板載置装置。 The substrate mounting apparatus according to claim 1 , wherein the plurality of support pins have the same height when the elastic member provided on each support pin makes point contact or line segment contact with the substrate. . ０．５ミリメートル以下の厚さ寸法を有する基板が載置される載置面を備える載置台と、
前記載置台を上下方向に貫通するように設けられ、基板を下面側から支持する複数の支持ピンと、
前記複数の支持ピンを、前記載置面の上方側にて基板を支持する支持位置と、当該載置面の下方側の退避位置との間で昇降させる昇降機構と、を備え、
前記複数の支持ピンには、先端部に、基板を下面側から支持する際に、当該基板からの荷重のみを受けて点接触または線分接触の状態から弾性変形して基板との接触面積が広がる弾性部材が設けられていることと、
周縁部側よりも中央部側の方が下方側へ撓んだ状態で基板を支持するように、前記支持位置が、前記基板の周縁部側を支持する支持ピンの先端部の高さ位置よりも、当該基板の中央部側を支持する支持ピンの先端部の高さ位置の方が低く設定され、前記弾性部材は、前記基板の周縁部側を支持する支持ピン、及び当該基板の中央部側を支持する支持ピンに設けられていることと、
前記基板の周縁部側を支持する支持ピンの先端部に設けられた弾性部材の硬度よりも、当該基板の中央部側を支持する支持ピンの先端部に設けられた弾性部材の硬度の方が高いことと、を特徴とする基板載置装置。 A mounting table including a mounting surface on which a substrate having a thickness dimension of 0.5 mm or less is mounted;
A plurality of support pins provided so as to penetrate the mounting table in the vertical direction, and supporting the substrate from the lower surface side;
An elevating mechanism that raises and lowers the plurality of support pins between a support position for supporting the substrate on the upper side of the placement surface and a retreat position on the lower side of the placement surface;
The plurality of supporting pins, the tip contact area in supporting substrate from the lower surface side, the substrate is elastically deformed from the state of contact or line contact received only by point loads from the substrate Is provided with an elastic member that spreads ,
The support position is higher than the height position of the tip of the support pin that supports the peripheral edge side of the substrate so that the substrate is supported in a state where the central side is bent downward than the peripheral edge side. Also, the height position of the front end portion of the support pin that supports the central portion side of the substrate is set lower, and the elastic member includes the support pin that supports the peripheral portion side of the substrate, and the central portion of the substrate. Being provided on a support pin that supports the side,
The hardness of the elastic member provided at the front end portion of the support pin that supports the central portion side of the substrate is larger than the hardness of the elastic member provided at the front end portion of the support pin that supports the peripheral portion side of the substrate. A substrate mounting apparatus characterized by being high . 前記複数の支持ピンのうち最も周縁部側に配置された支持ピンは、基板の外周縁からの距離が３０ミリメートル以内の位置に配置されていることを特徴とする請求項３に記載の基板載置装置。 4. The substrate mounting according to claim 3 , wherein the support pin disposed closest to the peripheral edge side among the plurality of support pins is disposed at a position within 30 mm from the outer peripheral edge of the substrate. Device. 前記基板は、全周が４メートル以上の角型基板であることを特徴とする請求項１ないし４のいずれか一つに記載の基板載置装置。 The substrate mounting apparatus according to any one of claims 1 to 4, wherein the substrate is a square substrate having a total circumference of 4 meters or more. 前記基板は、ガラス基板であることを特徴とする請求項１ないし５のいずれか一つに記載の基板載置装置。 The substrate, substrate mounting apparatus according to any one of claims 1 to 5, characterized in that a glass substrate. 請求項１ないし６のいずれか一つに記載の基板載置装置と、
前記基板載置装置の載置台を収容した処理容器と、
前記処理容器に基板の処理ガスを供給する処理ガス供給部と、を備えたことを特徴とする基板処理装置。 A substrate mounting device according to any one of claims 1 to 6 ,
A processing container containing a mounting table for the substrate mounting apparatus;
And a processing gas supply unit configured to supply a processing gas for the substrate to the processing container.
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