JP2008112902A - Supporting method and supporting structure of substrate - Google Patents
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Abstract
Description
本発明は、基板の支持方法及び支持構造に関する。 The present invention relates to a substrate supporting method and a supporting structure.
従来の基板の支持構造について、有機ＥＬ（エレクトロルミネセンス）パネル製造装置における基板搬送装置を例にとって説明する。有機ＥＬパネルは、ガラス基板へ種々の蒸着材料の蒸着を行うことによって、製造されている。その際、種々の蒸着材料が蒸着される蒸着面は、ガラス基板の下面であるため、ガラス基板を支持、保持するときには、蒸着されないガラス基板の端部又はガラス基板の上面か、若しくは、ガラス基板の下面の蒸着されない周辺部しか、接触が許されておらず、その部分に接触して、ガラス基板の支持、保持が行われることになる。 A conventional substrate support structure will be described by taking a substrate transfer device in an organic EL (electroluminescence) panel manufacturing apparatus as an example. Organic EL panels are manufactured by depositing various deposition materials on a glass substrate. At this time, since the deposition surface on which various deposition materials are deposited is the lower surface of the glass substrate, when supporting or holding the glass substrate, the end of the glass substrate that is not deposited, the upper surface of the glass substrate, or the glass substrate Only the peripheral portion of the lower surface of the substrate that is not deposited is allowed to contact, and the glass substrate is supported and held in contact with that portion.
有機ＥＬパネルを製造する際の蒸着プロセス中には、蒸着パターンを変更するために蒸着パターンが形成されたマスクを異なるものに変更したり、蒸着材料が異なる蒸着チャンバへ移動するためにガラス基板を保持する基板ホルダを異なるものに変更したりするため、ガラス基板の基板ホルダへの載せ換えが必要となる。ガラス基板の基板ホルダへの載せ換えは、搬送ロボット等による搬送により行われるが、このとき、基板ホルダからガラス基板を浮き上がらせるために、ガラス基板を支持する支持ピンを鉛直上方に上昇させて、ガラス基板のみを支持ピンで支持すると共に、ガラス基板の下面側に搬送ロボットのフォーク部分を差込んで、ガラス基板のみを搬送するようにしている。このとき、ガラス基板に対するフォーク部分の支持範囲も、支持ピンと同様に、ガラス基板の周辺部又は端面の部分に限られることになり、そのために、ガラス基板の水平方向の位置精度として高い精度が要求されていた。 During the vapor deposition process when manufacturing the organic EL panel, the mask on which the vapor deposition pattern is formed is changed to change the vapor deposition pattern, or the glass substrate is moved to move the vapor deposition material to a different vapor deposition chamber. In order to change the holding substrate holder to a different one, it is necessary to replace the glass substrate with the substrate holder. The transfer of the glass substrate to the substrate holder is performed by conveyance by a conveyance robot or the like, but at this time, in order to lift the glass substrate from the substrate holder, the support pins supporting the glass substrate are raised vertically upward, While supporting only a glass substrate with a support pin, the fork part of a conveyance robot is inserted in the lower surface side of a glass substrate, and only a glass substrate is conveyed. At this time, the support range of the fork portion with respect to the glass substrate is limited to the peripheral portion or the end surface portion of the glass substrate in the same manner as the support pins. Therefore, high accuracy is required as the horizontal position accuracy of the glass substrate. It had been.
ところが、支持ピンによりガラス基板を支持する場合、ガラス基板の周辺部又は端面のみ支持するため、ガラス基板の中央が自重により撓むと共に、ガラス基板の角部が跳ね上がるという現象が生じていた。このような撓みが生じている状況では、ガラス基板の水平方向の位置決め精度に悪い影響を与え、ガラス基板に対するフォーク部分の支持範囲がずれると共に、ガラス基板の基板ホルダへの載せ換え時に正しく乗せ換えができないおそれがあった。 However, when the glass substrate is supported by the support pins, only the peripheral portion or the end face of the glass substrate is supported, so that the center of the glass substrate is bent by its own weight and the corner portion of the glass substrate jumps up. In such a situation, the horizontal positioning accuracy of the glass substrate is adversely affected, the support range of the fork portion with respect to the glass substrate is deviated, and the glass substrate is correctly replaced when it is transferred to the substrate holder. There was a risk of not being able to.
このような問題を解消するため、支持ピンに替えて、図６（ａ）に示すように、ガラス基板３の４辺の略全部を支持する支持プレート６を用いる支持構造も検討されている。しかしながら、このような支持構造でもガラス基板３の撓みを十分に低減できていない。例えば、ガラス基板（ソーダガラス、５５０ｍｍ×６５０ｍｍ×０．７ｍｍ厚）の４辺の端部を支持プレート６で支持する場合、ガラス基板３の中央が沈み込むと共に、ガラス基板３の角部が跳ね上がるため、図６（ｂ）に示すように、最大３．０ｍｍ以上の高低差が生じ、又、その最大傾斜は０．０４３ｍ／ｍとなっていた。 In order to solve such a problem, a support structure using a support plate 6 that supports substantially all four sides of the glass substrate 3 as shown in FIG. However, even with such a support structure, the bending of the glass substrate 3 cannot be sufficiently reduced. For example, when supporting the edges of four sides of a glass substrate (soda glass, 550 mm × 650 mm × 0.7 mm thick) with the support plate 6, the center of the glass substrate 3 sinks and the corners of the glass substrate 3 jump up. Therefore, as shown in FIG. 6 (b), a maximum height difference of 3.0 mm or more occurred, and the maximum inclination was 0.043 m / m.
本発明は上記課題に鑑みなされたもので、ガラス基板の周辺部を下方から支持する際に、ガラス基板の撓みを低減して、精度良い位置決めが可能となる基板の支持方法及び支持構造を提供することを目的とする。 The present invention has been made in view of the above problems, and provides a substrate support method and a support structure that enable accurate positioning by reducing the deflection of the glass substrate when supporting the peripheral portion of the glass substrate from below. The purpose is to do.
上記課題を解決する第１の発明に係る基板の支持方法は、
矩形状のガラス基板を支持する際、プロセスの対象領域でない該ガラス基板の周辺部を複数の支持ピンで下方から支持する基板の支持方法において、
前記ガラス基板の対向する１対の辺の中央に各々少なくとも１つの第１支持ピンを配置すると共に、前記ガラス基板の他の対向する１対の辺に各々少なくとも２つの第２支持ピンを配置して、前記複数の支持ピンを少なくとも合計６つ以上の支持ピンから構成し、
前記第１支持ピン及び前記第２支持ピンを、前記ガラス基板の４角を避けて、前記ガラス基板の周辺部に配置することを特徴とする。
The substrate supporting method according to the first invention for solving the above-mentioned problems is as follows.
In supporting a rectangular glass substrate, in the substrate supporting method of supporting the peripheral portion of the glass substrate that is not the target region of the process from below with a plurality of support pins,
At least one first support pin is disposed at the center of the pair of opposite sides of the glass substrate, and at least two second support pins are disposed on the other pair of opposite sides of the glass substrate. The plurality of support pins is composed of at least six support pins in total,
The first support pins and the second support pins are arranged around a periphery of the glass substrate, avoiding the four corners of the glass substrate.
上記課題を解決する第２の発明に係る基板の支持方法は、
上記第１の発明に記載の基板の支持方法において、
前記ガラス基板の全面積に対して、前記第１支持ピン及び前記第２支持ピンに囲まれた領域より外側の前記ガラス基板の面積の比が０．２５以上となるように、前記第１支持ピン及び前記第２支持ピンを配置することを特徴とする。
The substrate supporting method according to the second invention for solving the above-mentioned problems is as follows.
In the method of supporting a substrate according to the first invention,
The first support so that the ratio of the area of the glass substrate outside the region surrounded by the first support pin and the second support pin is 0.25 or more with respect to the total area of the glass substrate. A pin and the second support pin are arranged.
上記課題を解決する第３の発明に係る基板の支持方法は、
上記第１、第２の発明に記載の基板の支持方法において、
前記第１支持ピン及び前記第２支持ピンの先端部は、半球状であることを特徴とする。
A substrate supporting method according to a third invention for solving the above-mentioned problems is as follows.
In the method for supporting a substrate according to the first and second inventions,
The tip portions of the first support pin and the second support pin are hemispherical.
上記課題を解決する第４の発明に係る基板の支持構造は、
矩形状のガラス基板を支持する際、プロセスの対象領域でない該ガラス基板の周辺部を複数の支持ピンで下方から支持する基板の支持構造において、
前記複数の支持ピンが、前記ガラス基板の対向する１対の辺の中央に各々配置した少なくとも１つの第１支持ピンと前記ガラス基板の他の対向する１対の辺に各々配置した少なくとも２つの第２支持ピンの少なくとも合計６つ以上の支持ピンから構成され、
前記第１支持ピン及び前記第２支持ピンを、前記ガラス基板の４角を避けて、前記ガラス基板の周辺部に配置したことを特徴とする。
A substrate support structure according to a fourth aspect of the present invention for solving the above problems is as follows.
In supporting a rectangular glass substrate, in the support structure of the substrate that supports the periphery of the glass substrate that is not the target region of the process from below with a plurality of support pins,
The plurality of support pins are arranged at the center of a pair of opposite sides of the glass substrate, respectively, and at least two second sides arranged respectively on the other pair of opposite sides of the glass substrate. It is composed of at least six support pins in total of two support pins,
The first support pin and the second support pin are arranged in a peripheral portion of the glass substrate, avoiding the four corners of the glass substrate.
上記課題を解決する第５の発明に係る基板の支持構造は、
上記第４の発明に記載の基板の支持構造において、
前記ガラス基板の全面積に対して、前記第１支持ピン及び前記第２支持ピンに囲まれた領域より外側の前記ガラス基板の面積の比が０．２５以上となるように、前記第１支持ピン及び前記第２支持ピンを配置したことを特徴とする。
A substrate support structure according to a fifth aspect of the present invention for solving the above problem is as follows.
In the substrate support structure according to the fourth invention,
The first support so that the ratio of the area of the glass substrate outside the region surrounded by the first support pin and the second support pin is 0.25 or more with respect to the total area of the glass substrate. A pin and the second support pin are arranged.
上記課題を解決する第６の発明に係る基板の支持構造は、
上記第４、第５の発明に記載の基板の支持構造において、
前記第１支持ピン及び前記第２支持ピンの先端部を半球状に形成したことを特徴とする。
A substrate support structure according to a sixth invention for solving the above-mentioned problems is as follows.
In the substrate support structure according to the fourth or fifth invention,
The tip portions of the first support pin and the second support pin are formed in a hemispherical shape.
本発明によれば、ガラス基板の周辺部を下方から支持する際に、少なくとも６本以上の支持ピンを用い、ガラス基板の４角を避けて配置するので、自重によりガラス基板が撓んでも、ガラス基板の角部を跳ね上がらなくして、支持した際のガラス基板全体の変形量を小さくすることができる。その結果、ガラス基板を搬送する際のガラス基板の位置精度が向上し、精度良い位置決めが可能となる。 According to the present invention, when supporting the peripheral part of the glass substrate from below, using at least six support pins and avoiding the four corners of the glass substrate, even if the glass substrate is bent by its own weight, It is possible to reduce the amount of deformation of the entire glass substrate when supported by preventing the corner of the glass substrate from jumping up. As a result, the positional accuracy of the glass substrate when transporting the glass substrate is improved, and accurate positioning is possible.
以下、図１、図２を用いて、本発明に係る基板の支持構造及び支持方法を説明する。又、本発明時に評価を行なった他の基板の支持構造とその測定結果を図３〜図６及び表１〜表５に示す。 Hereinafter, a substrate support structure and a support method according to the present invention will be described with reference to FIGS. Moreover, the support structure of the other board | substrate evaluated at the time of this invention and its measurement result are shown in FIGS. 3-6 and Tables 1-5.
図１は、本発明に係る基板の支持構造を示す図であり、図１（ａ）は、その側面図、図１（ｂ）は、その平面図を示すものである。 1A and 1B are diagrams showing a substrate support structure according to the present invention. FIG. 1A is a side view thereof, and FIG. 1B is a plan view thereof.
本実施例の基板の支持構造は、図示しない真空装置やガス供給系により内部を真空状態や所望のガス雰囲気にすることができるチャンバ２と、チャンバ２の底面側に設けられ、矩形状のガラス基板３の周辺部を下面側から支持する複数の支持ピン４ａ、４ｂと、同じく、チャンバ２の底面側に設けられ、支持ピン４ａ、４ｂを昇降させる昇降装置５とを有するものである。 The substrate support structure of the present embodiment includes a chamber 2 in which the inside can be brought into a vacuum state or a desired gas atmosphere by a vacuum device or a gas supply system (not shown), and a rectangular glass provided on the bottom surface side of the chamber 2. The plurality of support pins 4a and 4b that support the peripheral portion of the substrate 3 from the lower surface side, and the lifting device 5 that is provided on the bottom surface side of the chamber 2 and lifts and lowers the support pins 4a and 4b.
昇降装置５は、支持ピン４ａ、４ｂ自体を昇降させるものであるが、これは、チャンバ２内へガラス基板３を搬入、搬出する際に使用するものである。 The elevating device 5 elevates and lowers the support pins 4 a and 4 b itself, and this is used when the glass substrate 3 is carried into and out of the chamber 2.
具体的には、図示しない搬送ロボットのフォーク部分が、ガラス基板３の下面を保持してチャンバ２内へガラス基板３を搬入する際には、予め、支持ピン４ａ、４ｂを降下させておき、フォーク部分がガラス基板３を所定の位置まで搬入した後、支持ピン４ａ、４ｂを上昇させることにより、フォーク部分からガラス基板３を持ち上げて、支持ピン４ａ、４ｂのみでガラス基板３を支持するようにする。このことにより、フォーク部分をガラス基板３の下から引く抜くことが可能となる。 Specifically, when the fork portion of the transfer robot (not shown) holds the lower surface of the glass substrate 3 and carries the glass substrate 3 into the chamber 2, the support pins 4a and 4b are lowered in advance, After the fork portion carries the glass substrate 3 to a predetermined position, the support pins 4a and 4b are lifted to lift the glass substrate 3 from the fork portion so that the glass substrate 3 is supported only by the support pins 4a and 4b. To. As a result, the fork portion can be pulled out from under the glass substrate 3.
そして、チャンバ２からガラス基板を搬出する際には、支持ピン４ａ、４ｂのみで支持されたガラス基板３の下方にフォーク部分を移動させ、支持ピン４ａ、４ｂを降下させることにより、支持ピン４ａ、４ｂからフォーク部分へガラス基板３を乗せ換えることになる。その後、フォーク部分に支持されたガラス基板３は、チャンバ２から搬出されることになる。 When the glass substrate is unloaded from the chamber 2, the fork portion is moved below the glass substrate 3 supported only by the support pins 4a and 4b, and the support pins 4a and 4b are lowered, thereby supporting pins 4a. The glass substrate 3 is transferred from 4b to the fork portion. Thereafter, the glass substrate 3 supported by the fork portion is carried out of the chamber 2.
支持ピン４ａ、４ｂに支持されたガラス基板３を搬送ロボットのフォーク部分に乗せ換える際には、ガラス基板３の撓みを低減した状態で行うことが望ましい。そのため、本発明では、支持ピン４ａ、４ｂの数、配置位置を工夫することにより、ガラス基板３の撓みを低減している。 When the glass substrate 3 supported by the support pins 4a and 4b is transferred to the fork portion of the transfer robot, it is desirable to perform the state in which the bending of the glass substrate 3 is reduced. Therefore, in this invention, the bending of the glass substrate 3 is reduced by devising the number and arrangement position of the support pins 4a and 4b.
支持ピン４ａ、４ｂは、基本的には、ガラス基板３の蒸着面への不純物の付着を防止するため、蒸着が行われないガラス基板３の周辺部、即ち、ガラス基板３の端部から１〜５ｍｍ幅の範囲を支持するように配置され（なお、図１では、一例として、ガラス基板３の端部から５ｍｍの位置としている。）、又、ガラス基板３の自重による撓みをできるだけ低減するため、複数の支持ピン４ａ、４ｂで支持する構成である。なお、支持ピン４の先端部は、Ｒを取って、半球状に形成されている。 The support pins 4a and 4b are basically 1 from the periphery of the glass substrate 3 where vapor deposition is not performed, that is, from the end of the glass substrate 3 in order to prevent impurities from adhering to the vapor deposition surface of the glass substrate 3. It arrange | positions so that the range of -5mm width may be supported (In addition, in FIG. 1, it is set as a 5-mm position from the edge part of the glass substrate 3 as an example.) Moreover, the bending by the dead weight of the glass substrate 3 is reduced as much as possible. Therefore, it is the structure which supports with the some support pin 4a, 4b. In addition, the front-end | tip part of the support pin 4 takes R and is formed in the hemispherical shape.
又、支持ピン４ａ、４ｂは、ガラス基板３の短辺３ａ側の中央に配置した各々１本の支持ピン４ａと、長辺３ｂ側に配置した各々２本の支持ピン４ｂの合計６本からなり、これらの支持ピン４ａ、４ｂを、ガラス基板３の周辺部であり、かつ、ガラス基板３の４角を除いた位置に配置している。換言すると、ガラス基板３の４辺のうち、向かい合う１対の短辺３ａは、その中央に配置された１本の支持ピン４ａで必ず支持されており、残りの向かい合う１対の長辺３ｂは、２本の支持ピン４ｂで支持されている。 Further, the support pins 4a and 4b are composed of a total of six support pins 4a arranged at the center on the short side 3a side of the glass substrate 3 and two support pins 4b arranged on the long side 3b side. Thus, these support pins 4 a and 4 b are arranged in the peripheral portion of the glass substrate 3 and at positions excluding the four corners of the glass substrate 3. In other words, out of the four sides of the glass substrate 3, the pair of opposing short sides 3a is always supported by the single support pin 4a disposed at the center thereof, and the remaining pair of opposing long sides 3b is It is supported by two support pins 4b.
そして、支持ピン４ａ、４ｂは、後述する表１〜５からわかるように、ガラス基板３の全面積に対して、支持ピン４ａ、４ｂに囲まれた領域より外側のガラス基板３の面積の比が０．２５以上となるように、配置することが望ましい。 And as can be seen from Tables 1 to 5 described later, the support pins 4a and 4b are in a ratio of the area of the glass substrate 3 outside the region surrounded by the support pins 4a and 4b to the total area of the glass substrate 3. It is desirable to arrange so that becomes 0.25 or more.
次に、本実施例を含めて、本願発明者等が比較を行った他の測定実験の結果も示して、本実施例の基板の支持構造の優位性を説明する。 Next, the superiority of the substrate support structure of this embodiment will be described by showing the results of other measurement experiments in which the inventors of the present application compared with this embodiment.
（測定実験１）
本測定実験は、基本的には、図１に示した基板の支持構造の構成に基づいて、下記表１に示すように、間隔Ｂ、間隔Ｃの条件を変更して、支持ピンの位置を各々変更し、各条件下において、ガラス基板の変形量を測定すると共に、その代表的な計測値として、最大高低差及び最大傾斜を求めたものである。
(Measurement experiment 1)
In this measurement experiment, basically, based on the structure of the substrate support structure shown in FIG. 1, the conditions of the distance B and the distance C are changed as shown in Table 1 below, and the positions of the support pins are changed. Each change is made, and the deformation amount of the glass substrate is measured under each condition, and the maximum height difference and the maximum inclination are obtained as typical measurement values.
なお、本測定実験において、間隔Ａは、支持ピン４ａと支持ピン４ｂの短辺３ａに平行な方向における間隔、間隔Ｂは、支持ピン４ａと支持ピン４ｂの長辺３ｂに平行な方向における間隔の短い方の間隔、間隔Ｃは、２つの支持ピン４ｂ間の長辺３ｂに平行な方向における間隔である。又、本測定実験においては、下記測定実験２〜５を含めて、ガラス基板として、ソーダガラス、５５０ｍｍ×６５０ｍｍ×０．７ｍｍ厚を用い、又、支持ピンとして、直径３ｍｍのものを用いている。又、表１〜５における間隔Ａ、Ｂ、Ｃ、Ｄ及び最大高低差の単位はｍｍであり、最大傾斜の単位はｍ／ｍである。 In this measurement experiment, the interval A is the interval in the direction parallel to the short side 3a of the support pin 4a and the support pin 4b, and the interval B is the interval in the direction parallel to the long side 3b of the support pin 4a and the support pin 4b. The shorter interval, interval C, is the interval in the direction parallel to the long side 3b between the two support pins 4b. In this measurement experiment, including the following measurement experiments 2 to 5, soda glass, 550 mm × 650 mm × 0.7 mm thickness is used as the glass substrate, and a support pin having a diameter of 3 mm is used. . In Tables 1 to 5, the units of intervals A, B, C, D and the maximum height difference are mm, and the unit of maximum inclination is m / m.
なお、上記実験の代表例として、実験１−４の条件下におけるガラス基板全面の変形量の３Ｄグラフを図２に示した。 As a representative example of the experiment, FIG. 2 shows a 3D graph of the deformation amount of the entire glass substrate under the conditions of Experiment 1-4.
上記条件の基板の支持構造において、面積比Ｒ（支持ピンより外側のガラス基板の面積／ガラス基板の全面積）を計算すると、表１に示す結果からわかるように、面積比Ｒが０．２５以上を満たす実験１−３、１−４の場合、最大高低差及び最大傾斜が抑制されており、ガラス基板３の撓みが低減されたことがわかる。このような支持ピン４ａ、４ｂの配置構成の場合、ガラス基板３自体の撓みを低減できるため、ガラス基板の位置精度をより向上させることが可能であり、搬送ロボットによる搬送の位置精度を向上させることができる。 When the area ratio R (area of the glass substrate outside the support pins / total area of the glass substrate) is calculated in the substrate support structure under the above conditions, as can be seen from the results shown in Table 1, the area ratio R is 0.25. In Experiments 1-3 and 1-4 satisfying the above, the maximum height difference and the maximum inclination are suppressed, and it can be seen that the bending of the glass substrate 3 is reduced. In the case of such an arrangement configuration of the support pins 4a and 4b, since the bending of the glass substrate 3 itself can be reduced, the positional accuracy of the glass substrate can be further improved, and the positional accuracy of the transport by the transport robot is improved. be able to.
これは、ガラス基板３の４角を支持ピン４ａ、４ｂであえて支持せず、自由に変形可能とすることにより、ガラス基板３の４角では、その部分での自重により鉛直下方側に撓み、ガラス基板３の４角が鉛直上方へ跳ね上がる量が抑制されると共に、ガラス基板３の４角での鉛直下方側の撓みの影響で、ガラス基板３の中央部においては、鉛直下方へ撓む変位量も抑制されて、ガラス基板３全体の変形量が低減されたからであると考えられる。 This is because the four corners of the glass substrate 3 are not supported by the support pins 4a and 4b, and can be freely deformed, so that the four corners of the glass substrate 3 bend vertically downward by its own weight, The amount by which the four corners of the glass substrate 3 jump upward in the vertical direction is suppressed, and in the central portion of the glass substrate 3, the displacement that bends vertically downward due to the influence of the vertical downward side deflection at the four corners of the glass substrate 3. This is considered to be because the amount of deformation was suppressed and the amount of deformation of the entire glass substrate 3 was reduced.
（測定実験２）
本測定実験は、支持ピン４ａ、４ｂを、ガラス基板３の周辺部（ガラス基板３の端部から５ｍｍの位置）であり、かつ、ガラス基板３の４角を除いた位置に配置しているが、図１に示した基板の支持構造とは異なり、図３（ａ）に示すように、ガラス基板３の短辺３ａ側に各々２本の支持ピン４ａを、長辺３ｂ側の中央に各々１本の支持ピン４ｂを、合計６本配置したものである。そして、この構成に基づいて、下記表２に示すように、間隔Ａ、間隔Ｂの条件を変更して、支持ピン４ａ、４ｂの位置を各々変更し、各条件下において、ガラス基板の変形量を測定すると共に、その代表的な計測値として、最大高低差及び最大傾斜を求めたものである。
(Measurement experiment 2)
In this measurement experiment, the support pins 4a and 4b are arranged at a peripheral portion of the glass substrate 3 (a position 5 mm from the end of the glass substrate 3) and at a position excluding the four corners of the glass substrate 3. However, unlike the substrate support structure shown in FIG. 1, two support pins 4a are respectively provided on the short side 3a side of the glass substrate 3 and the center on the long side 3b side, as shown in FIG. A total of six support pins 4b are arranged for each. Based on this configuration, as shown in Table 2 below, the conditions of the distance A and the distance B are changed, and the positions of the support pins 4a and 4b are changed. And the maximum height difference and the maximum inclination are obtained as typical measurement values.
なお、本測定実験において、間隔Ａは、支持ピン４ａと支持ピン４ｂの短辺３ａに平行な方向における間隔の短い方の間隔、間隔Ｂは、２つの支持ピン４ａ間の短辺３ａに平行な方向における間隔、間隔Ｃは、支持ピン４ａと支持ピン４ｂの長辺３ｂに平行な方向における間隔である。 In this measurement experiment, the interval A is the shorter interval in the direction parallel to the short sides 3a of the support pins 4a and 4b, and the interval B is parallel to the short side 3a between the two support pins 4a. The interval C in this direction, the interval C, is an interval in a direction parallel to the long sides 3b of the support pins 4a and 4b.
なお、上記実験の代表例として、実験２−４の条件下におけるガラス基板全面の変形量の３Ｄグラフを図３（ｂ）に示した。 As a representative example of the experiment, a 3D graph of the deformation amount of the entire glass substrate under the conditions of Experiment 2-4 is shown in FIG.
上記条件の基板の支持構造において、面積比Ｒ（支持ピンより外側のガラス基板の面積／ガラス基板の全面積）を計算すると、表２に示す結果からわかるように、面積比Ｒが０．２５以上を満たす実験２−４の場合、最大高低差及び最大傾斜が抑制されており、ガラス基板３の撓みが低減されたことがわかる。このような支持ピン４ａ、４ｂの配置構成の場合、ガラス基板３自体の撓みを低減できるため、ガラス基板の位置精度をより向上させることが可能であり、搬送ロボットによる搬送の位置精度を向上させることができる。 In the substrate support structure under the above conditions, when the area ratio R (area of the glass substrate outside the support pins / total area of the glass substrate) is calculated, as can be seen from the results shown in Table 2, the area ratio R is 0.25. In Experiment 2-4 that satisfies the above conditions, the maximum height difference and the maximum inclination are suppressed, and it can be seen that the bending of the glass substrate 3 is reduced. In the case of such an arrangement configuration of the support pins 4a and 4b, since the bending of the glass substrate 3 itself can be reduced, the positional accuracy of the glass substrate can be further improved, and the positional accuracy of the transport by the transport robot is improved. be able to.
（測定実験３）
本測定実験は、支持ピン４ａ、４ｂを、ガラス基板３の周辺部（ガラス基板３の端部から５ｍｍの位置）であり、かつ、ガラス基板３の４角を除いた位置に配置しているが、図１に示した基板の支持構造とは異なり、図４（ａ）に示すように、ガラス基板３の短辺３ａ側に各々２本の支持ピン４ａを、長辺３ｂ側の中央に各々２本の支持ピン４ｂを、合計８本配置したものである。そして、この構成に基づいて、下記表３に示すように、間隔Ａ、間隔Ｂ、間隔Ｃ、間隔Ｄの条件を変更して、支持ピン４ａ、４ｂの位置を各々変更し、各条件下において、ガラス基板の変形量を測定すると共に、その代表的な計測値として、最大高低差及び最大傾斜を求めたものである。
(Measurement experiment 3)
In this measurement experiment, the support pins 4a and 4b are arranged at a peripheral portion of the glass substrate 3 (a position 5 mm from the end of the glass substrate 3) and at a position excluding the four corners of the glass substrate 3. However, unlike the substrate support structure shown in FIG. 1, as shown in FIG. 4 (a), two support pins 4a are provided on the short side 3a side of the glass substrate 3, and the long side 3b side is centered. A total of eight support pins 4b are arranged for each two. Then, based on this configuration, as shown in Table 3 below, the conditions of the interval A, the interval B, the interval C, and the interval D are changed, and the positions of the support pins 4a and 4b are changed. In addition to measuring the deformation amount of the glass substrate, the maximum height difference and the maximum inclination are obtained as typical measurement values.
なお、本測定実験において、間隔Ａは、支持ピン４ａと支持ピン４ｂの短辺３ａに平行な方向における間隔の短い方の間隔、間隔Ｂは、２つの支持ピン４ａ間の短辺３ａに平行な方向における間隔、間隔Ｃは、支持ピン４ａと支持ピン４ｂの長辺３ｂに平行な方向における間隔の短い方の間隔、間隔Ｄは、２つの支持ピン４ｂ間の長辺３ｂに平行な方向における間隔である。 In this measurement experiment, the interval A is the shorter interval in the direction parallel to the short sides 3a of the support pins 4a and 4b, and the interval B is parallel to the short side 3a between the two support pins 4a. The distance C in this direction, the distance C, is the shorter distance in the direction parallel to the long side 3b of the support pins 4a and 4b, and the distance D is the direction parallel to the long side 3b between the two support pins 4b. The interval at.
なお、上記実験の代表例として、実験３−４の条件下におけるガラス基板全面の変形量の３Ｄグラフを図４（ｂ）に示した。 As a representative example of the experiment, FIG. 4B shows a 3D graph of the deformation amount of the entire glass substrate under the conditions of Experiment 3-4.
上記条件の基板の支持構造において、面積比Ｒ（支持ピンより外側のガラス基板の面積／ガラス基板の全面積）を計算すると、表３に示す結果からわかるように、面積比Ｒが０．２５以上を満たすものはなく、最大高低差及び最大傾斜が抑制されておらず、ガラス基板３の撓みが改善できていないことがわかる。 When the area ratio R (area of the glass substrate outside the support pin / total area of the glass substrate) is calculated in the substrate support structure under the above conditions, as can be seen from the results shown in Table 3, the area ratio R is 0.25. There is nothing satisfying the above, the maximum height difference and the maximum inclination are not suppressed, and it is understood that the bending of the glass substrate 3 cannot be improved.
（測定実験４）
本測定実験は、合計４本の支持ピン４ａ、４ｂを、ガラス基板３の周辺部（ガラス基板３の端部から５ｍｍの位置）であり、かつ、ガラス基板３の４角に配置したもの（実験４−１）と、合計４本の支持ピン４ａ、４ｂを、ガラス基板３の周辺部（ガラス基板３の端部から５ｍｍの位置）であり、かつ、ガラス基板３の４角を除いた位置に配置したもの（実験４−２）である。例えば、実験４−２は、図５（ａ）に示すように、ガラス基板３の短辺３ａ側の中央に各々１本の支持ピン４ａを、長辺３ｂ側の中央に各々１本の支持ピン４ｂを、合計４本配置した。そして、各条件下において、ガラス基板の変形量を測定すると共に、その代表的な計測値として、最大高低差及び最大傾斜を求めたものである。
(Measurement experiment 4)
In this measurement experiment, a total of four support pins 4a and 4b are arranged in the periphery of the glass substrate 3 (position 5 mm from the end of the glass substrate 3) and at the four corners of the glass substrate 3 ( Experiment 4-1) and a total of four support pins 4a and 4b are the peripheral part of the glass substrate 3 (position 5 mm from the edge part of the glass substrate 3), and the four corners of the glass substrate 3 were removed. This is the one arranged at the position (Experiment 4-2). For example, in Experiment 4-2, as shown in FIG. 5A, one support pin 4a is provided at the center on the short side 3a side of the glass substrate 3, and one support is provided at the center on the long side 3b side. A total of four pins 4b are arranged. And while measuring the deformation amount of a glass substrate on each condition, the maximum height difference and the maximum inclination were calculated | required as the typical measured value.
なお、本測定実験において、間隔Ａは、支持ピン４ａと支持ピン４ｂの短辺３ａに平行な方向における間隔、間隔Ｂは、支持ピン４ａと支持ピン４ｂの長辺３ｂに平行な方向における間隔である。 In this measurement experiment, the interval A is the interval in the direction parallel to the short side 3a of the support pin 4a and the support pin 4b, and the interval B is the interval in the direction parallel to the long side 3b of the support pin 4a and the support pin 4b. It is.
なお、上記実験の代表例として、実験４−２の条件下におけるガラス基板全面の変形量の３Ｄグラフを図５（ｂ）に示した。 As a representative example of the experiment, a 3D graph of the deformation amount of the entire glass substrate under the conditions of Experiment 4-2 is shown in FIG.
上記条件の基板の支持構造において、面積比Ｒ（支持ピンより外側のガラス基板の面積／ガラス基板の全面積）を計算すると、表４に示す結果からわかるように、面積比Ｒが０．２５以上を満たしていない実験４−１は、最大高低差及び最大傾斜が抑制されておらず、ガラス基板３の撓みが改善できていないことがわかる。なお、面積比Ｒが０．２５以上を満たす実験４−２においては、最大高低差及び最大傾斜の抑制が見られ、ガラス基板３の撓みが多少改善できているようであり、面積比Ｒとしては、０．５程度が上限であると考えられる。 When the area ratio R (area of the glass substrate outside the support pins / total area of the glass substrate) is calculated in the substrate support structure under the above conditions, as can be seen from the results shown in Table 4, the area ratio R is 0.25. In Experiment 4-1, which does not satisfy the above, the maximum height difference and the maximum inclination are not suppressed, and it is understood that the bending of the glass substrate 3 cannot be improved. In Experiment 4-2 where the area ratio R satisfies 0.25 or more, the maximum height difference and the maximum inclination are suppressed, and the bending of the glass substrate 3 seems to be somewhat improved. Is considered to be about 0.5.
（測定実験５）
本測定実験は、支持ピンに替えて、図６（ａ）に示すように、ガラス基板３の４辺の略全部を支持する支持プレート６を用い、ガラス基板３の周辺部を、その端部から５ｍｍ内側まで支持するものである。そして、その条件下において、ガラス基板の変形量を測定すると共に、その代表的な計測値として、最大高低差及び最大傾斜を求めたものである。
(Measurement experiment 5)
In this measurement experiment, instead of the support pins, as shown in FIG. 6A, a support plate 6 that supports substantially all of the four sides of the glass substrate 3 is used, and the peripheral portion of the glass substrate 3 is arranged at its end. To 5 mm inside. And while measuring the deformation amount of a glass substrate on the conditions, the maximum height difference and the maximum inclination were calculated | required as the typical measured value.
なお、上記実験におけるガラス基板全面の変形量の３Ｄグラフを図６（ｂ）に示した。 FIG. 6B shows a 3D graph of the deformation amount of the entire glass substrate in the above experiment.
上記基板の支持構造においては、ガラス基板３の４辺の端部略全てを支持プレート６で支持しているが、ガラス基板３の中央部の沈み込み及びガラス基板３の角部の跳ね上がりの抑制が十分ではなく、表５に示す結果からわかるように、ガラス基板３の撓みが改善できていないことがわかる。 In the substrate support structure, almost all of the four edge portions of the glass substrate 3 are supported by the support plate 6, but suppression of sinking of the central portion of the glass substrate 3 and jumping of corner portions of the glass substrate 3 is suppressed. Is not sufficient, and as can be seen from the results shown in Table 5, it can be seen that the deflection of the glass substrate 3 has not been improved.
以上の測定実験からわかるように、矩形状のガラス基板を支持ピンで支持する際、その周辺部しか支持できない制約がある場合には、使用する支持ピンの数、配置位置が適切でないと、ガラス基板が自重により大きく撓んでしまい、搬送ロボットによる搬送時の位置精度に大きな影響を与えてしまう。しかしながら、測定実験１〜５の結果を参照すると、上述したように、ガラス基板３の対向する辺の中央に各々１本、残りの対向する辺に各々２本、合計６本の支持ピンを用い、ガラス基板３の周辺部であり、かつ、ガラス基板３の４角を除いた位置に配置すると共に、ガラス基板の全面積に対して、支持ピンに囲まれた領域より外側のガラス基板の面積の比が０．２５以上となるように、６本の支持ピンを配置すると、ガラス基板の撓みを低減することができた。 As can be seen from the above measurement experiments, when supporting a rectangular glass substrate with support pins, there is a restriction that only the peripheral part can be supported. The substrate is greatly bent due to its own weight, which greatly affects the position accuracy during transfer by the transfer robot. However, referring to the results of the measurement experiments 1 to 5, as described above, a total of six support pins are used, one at the center of the opposite sides of the glass substrate 3 and two at the remaining opposite sides. The area of the glass substrate 3 that is a peripheral portion of the glass substrate 3 and is disposed at a position excluding the four corners of the glass substrate 3 and outside the region surrounded by the support pins with respect to the total area of the glass substrate When the six support pins are arranged so that the ratio of the above becomes 0.25 or more, the bending of the glass substrate can be reduced.
なお、ガラス基板３の大きさが、上記測定実験で用いたものより大きくなる場合には、支持ピン４ｂより更に角部に近い位置ではなく、支持ピン４ｂ間の間隔Ｃ（図１（ｂ）参照）の中間の位置に更に支持ピンを設けて、ガラス基板を支持することが望ましいと思われる。 In addition, when the magnitude | size of the glass substrate 3 becomes larger than what was used in the said measurement experiment, it is not the position nearer to a corner | angular part than the support pin 4b, but the space | interval C between the support pins 4b (FIG.1 (b)). It may be desirable to support the glass substrate by further providing support pins in the middle position of the reference).
本発明に係る基板の支持構造及び支持方法は、有機ＥＬ製造装置に限らず、真空蒸着装置等の基板搬送装置にも適用可能なものである。 The substrate support structure and support method according to the present invention are not limited to an organic EL manufacturing apparatus, but can also be applied to a substrate transport apparatus such as a vacuum vapor deposition apparatus.
２ チャンバ
３ ガラス基板
４ 支持ピン
５ 昇降装置
2 Chamber 3 Glass substrate 4 Support pin 5 Lifting device
Claims (6)
前記ガラス基板の対向する１対の辺の中央に各々少なくとも１つの第１支持ピンを配置すると共に、前記ガラス基板の他の対向する１対の辺に各々少なくとも２つの第２支持ピンを配置して、前記複数の支持ピンを少なくとも合計６つ以上の支持ピンから構成し、
前記第１支持ピン及び前記第２支持ピンを、前記ガラス基板の４角を避けて、前記ガラス基板の周辺部に配置することを特徴とする基板の支持方法。 In supporting a rectangular glass substrate, in the substrate supporting method of supporting the peripheral portion of the glass substrate that is not the target region of the process from below with a plurality of support pins,
At least one first support pin is disposed at the center of the pair of opposite sides of the glass substrate, and at least two second support pins are disposed on the other pair of opposite sides of the glass substrate. The plurality of support pins is composed of at least six support pins in total,
The substrate support method, wherein the first support pin and the second support pin are arranged in a peripheral portion of the glass substrate so as to avoid four corners of the glass substrate.
前記ガラス基板の全面積に対して、前記第１支持ピン及び前記第２支持ピンに囲まれた領域より外側の前記ガラス基板の面積の比が０．２５以上となるように、前記第１支持ピン及び前記第２支持ピンを配置することを特徴とする基板の支持方法。 The method for supporting a substrate according to claim 1,
The first support so that the ratio of the area of the glass substrate outside the region surrounded by the first support pin and the second support pin is 0.25 or more with respect to the total area of the glass substrate. A method for supporting a substrate, comprising arranging a pin and the second support pin.
前記第１支持ピン及び前記第２支持ピンの先端部は、半球状であることを特徴とする基板の支持方法。 In the support method of the board | substrate of Claim 2 or Claim 3,
The substrate supporting method according to claim 1, wherein tip portions of the first supporting pin and the second supporting pin are hemispherical.
前記複数の支持ピンが、前記ガラス基板の対向する１対の辺の中央に各々配置した少なくとも１つの第１支持ピンと前記ガラス基板の他の対向する１対の辺に各々配置した少なくとも２つの第２支持ピンの少なくとも合計６つ以上の支持ピンから構成され、
前記第１支持ピン及び前記第２支持ピンを、前記ガラス基板の４角を避けて、前記ガラス基板の周辺部に配置したことを特徴とする基板の支持構造。 In supporting a rectangular glass substrate, in the support structure of the substrate that supports the periphery of the glass substrate that is not the target region of the process from below with a plurality of support pins,
The plurality of support pins are arranged at the center of a pair of opposite sides of the glass substrate, respectively, and at least two second sides arranged respectively on the other pair of opposite sides of the glass substrate. It is composed of at least six support pins in total of two support pins,
A substrate support structure, wherein the first support pin and the second support pin are arranged in a peripheral portion of the glass substrate, avoiding the four corners of the glass substrate.
前記ガラス基板の全面積に対して、前記第１支持ピン及び前記第２支持ピンに囲まれた領域より外側の前記ガラス基板の面積の比が０．２５以上となるように、前記第１支持ピン及び前記第２支持ピンを配置したことを特徴とする基板の支持構造。 In the support structure of the board | substrate of Claim 4,
The first support so that the ratio of the area of the glass substrate outside the region surrounded by the first support pin and the second support pin is 0.25 or more with respect to the total area of the glass substrate. A support structure for a substrate, comprising a pin and the second support pin.
前記第１支持ピン及び前記第２支持ピンの先端部を半球状に形成したことを特徴とする基板の支持構造。 In the support structure of the board | substrate of Claim 4 or Claim 5,
A substrate support structure, wherein tip portions of the first support pin and the second support pin are formed in a hemispherical shape.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006295772A JP2008112902A (en) | 2006-10-31 | 2006-10-31 | Supporting method and supporting structure of substrate |
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| Application Number | Priority Date | Filing Date | Title |
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| JP2006295772A JP2008112902A (en) | 2006-10-31 | 2006-10-31 | Supporting method and supporting structure of substrate |
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| JP2008112902A true JP2008112902A (en) | 2008-05-15 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103247564A (en) * | 2012-02-06 | 2013-08-14 | 东京毅力科创株式会社 | Substrate processing apparatus and substrate processing method |
| JP2015167159A (en) * | 2014-03-03 | 2015-09-24 | 東京エレクトロン株式会社 | Board mounting device and board treatment device |
| KR20170031504A (en) * | 2015-09-11 | 2017-03-21 | 주식회사 선익시스템 | A Support Method for a Glass Substrate |
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|---|---|---|---|---|
| JP2003017545A (en) * | 2001-07-04 | 2003-01-17 | Matsushita Electric Ind Co Ltd | Method and apparatus for positioning substrate |
| JP2006196862A (en) * | 2004-12-16 | 2006-07-27 | Tokyo Ohka Kogyo Co Ltd | Supporting pin for substrate |
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- 2006-10-31 JP JP2006295772A patent/JP2008112902A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003017545A (en) * | 2001-07-04 | 2003-01-17 | Matsushita Electric Ind Co Ltd | Method and apparatus for positioning substrate |
| JP2006196862A (en) * | 2004-12-16 | 2006-07-27 | Tokyo Ohka Kogyo Co Ltd | Supporting pin for substrate |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103247564A (en) * | 2012-02-06 | 2013-08-14 | 东京毅力科创株式会社 | Substrate processing apparatus and substrate processing method |
| JP2013161946A (en) * | 2012-02-06 | 2013-08-19 | Tokyo Electron Ltd | Substrate processing apparatus and substrate processing method |
| JP2015167159A (en) * | 2014-03-03 | 2015-09-24 | 東京エレクトロン株式会社 | Board mounting device and board treatment device |
| KR20170031504A (en) * | 2015-09-11 | 2017-03-21 | 주식회사 선익시스템 | A Support Method for a Glass Substrate |
| KR101719176B1 (en) | 2015-09-11 | 2017-03-23 | 주식회사 선익시스템 | A Support Method for a Glass Substrate |
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